CN100552982C - Bolometric infrared sensors and manufacture method thereof with double-layer structure - Google Patents
Bolometric infrared sensors and manufacture method thereof with double-layer structure Download PDFInfo
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- CN100552982C CN100552982C CNB2004800293609A CN200480029360A CN100552982C CN 100552982 C CN100552982 C CN 100552982C CN B2004800293609 A CNB2004800293609 A CN B2004800293609A CN 200480029360 A CN200480029360 A CN 200480029360A CN 100552982 C CN100552982 C CN 100552982C
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/52—Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
- G01J5/53—Reference sources, e.g. standard lamps; Black bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
- H01L27/1467—Infrared imagers of the hybrid type
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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Abstract
The invention discloses a kind of bolometric infrared sensors and manufacture method thereof, thereby it comes the resonance absorption infrared ray to improve absorptivity by spectroscope design, and prevented because the transducer distortion that the stress that heating produces causes with double-layer structure.The infrared sensor of the described ROIC of comprising substrate and a plurality of pixels comprises: be positioned at the bottom that comprises reflective metal layer on the described ROIC substrate; Be positioned at described bottom top and be used for the ultrared cavity of resonance absorption; Upper strata with sandwich shape, described interlayer comprise the absorption-transport layer that has incision tract therebetween and are positioned at the bolometer layer of described absorption-transport layer above and below; And the edge that is arranged on described pixel is used to support the fixture that described upper strata also is used as electrode.
Description
Technical field
The present invention relates to have the bolometric infrared sensors and the manufacture method thereof of double-layer structure, particularly relate to a kind of be used for by the infrared ray that spectroscope (spectroscopic) design is passed λ/4 optical paths that comprise cavity with resonance absorption improve absorptivity and by 1) make pixel about its diagonal symmetry; 2) in having the absorption-transport layer of incision tract, form sandwich; And 3) form comprise silicon nitride layer resilient coating to prevent because the bolometric infrared sensors and the manufacture method thereof of the transducer that the multiple stress that heating causes causes distortion.
Background technology
Usually, there is two types infrared sensor (hereinafter being referred to as " IR transducer "), that is, and refrigeration IR transducer and non-refrigeration IR transducer.The signal of telecommunication that refrigeration IR sensor is produced by the interaction of the electronics of ultrared photon and object.Non-refrigeration IR transducer comes work by the thermal change that detects the infrared ray generation that is absorbed by object.Refrigeration IR transducer mainly comprises semiconductor device and provides low noise and the fast response time.Yet there are some shortcomings in refrigeration IR transducer.For example, need-193 ℃ liquid nitrogen temperature to activate refrigeration IR transducer.The performance relative mistake of non-refrigeration IR transducer, but it can be worked at normal temperatures.Therefore, need the refrigeration IR transducer of cooling processing to be mainly used in war industry.On the other hand, non-refrigeration IR transducer mainly produce be used for civilian.
Non-refrigeration IR transducer is divided into bolometer type, thermocouple type and pyro-electric type again.It is lower that but pyro-electric type IR transducer has higher detectivity output.Compare with pyro-electric type IR transducer, bolometer type IR transducer and thermocouple type IR transducer all have relatively low detectivity, but (monolithic integrated circuit type) can obtain higher output on single silicon wafer by infrared sensor is manufactured on testing circuit.Therefore, bolometer type IR transducer and thermocouple type IR transducer all meet civilian requirement.Bolograph type IR transducer is converted to the heat energy that causes that temperature increases by absorbing the infrared ray from object with the infrared ray that absorbs, and measures the impedance variation that is caused by this thermal change and detect infrared ray.
It is No.5 that Fig. 1 shows in the patent No., and disclosed name is called the schematic diagram of the two-level bolometric ir sensor of " thermal sensor (heat seeking transducer) " in 300,915 american documentation literatures.
With reference to Fig. 1, this two-level bolometric ir sensor 10 comprises the upper strata 11 and the lower floor 12 of projection.This lower floor has the planar semiconductor substrate such as silicon substrate.This surface of silicon has a plurality of assemblies of integrated circuit, comprising: the contact pad of diode, x bus and y bus, connection line (connection) and x terminal bus.The infrared absorption layer that the upper strata 11 of projection comprises first silicon nitride layer, bolometer layer, is arranged on second silicon nitride layer between first silicon nitride layer and the bolometer layer and is arranged on second silicon nitride layer top.Described upper strata 11 and lower floor 12 are separated by a cavity.
In the infrared sensor of above-mentioned prior art, exist many problems.For example, the upper strata of described projection is provided with a plurality of strutting pieces, thereby has reduced to be used to absorb ultrared whole zone.Therefore, almost can not obtain to be used to absorb ultrared maximum region.
The patent No. is that Korean Patent document, the patent No. of No.10-299642 and No.10-299643 is No.6,441,374 and No.6,448,557 american documentation literature discloses and has been used to improve the sensitivity of infrared sensor and the infrared sensor and the manufacture method thereof of duty factor thereof, for example introduced bolometer transducer respectively with three layers, make the bolometer transducer with three layers method, have three layers of bolometer transducer that comprise infrared reflecting layer and heat seeking pyroscan with heat isolating construction.
Yet, in above-mentioned prior art, use the electrical characteristics and the architectural characteristic of infrared sensor to improve absorptivity.Thereby, to compare with the infrared sensor that designs based on the spectroscope method, the infrared sensor of prior art only provides low relatively absorptivity.In addition, in infrared ray absorbing bolograph, absorb ultrared top from bottom protrusion (just having formed cavity), thereby caused the distortion on infrared sensor top, thereby influenced the characteristic of infrared sensor unfriendly according to art methods.
In order to address these problems, provide several solutions.For example, disclose a kind of infrared sensor with three layers in publication number is the Korean Patent document of No.2000-46515, it comprises silicon oxide layer, bolometer layer and in described silicon oxide layer above and below and surround the silicon oxynitride layer of the infrared sensor distortion that described bolometer layer causes with the reaction that prevents between airborne steam and the silicon oxide layer.Disclose a kind of bolometric infrared sensors in publication number is the Korean Patent document of No.2000-04158, this transducer comprises Drive Layer, supporting layer, the back sheet between Drive Layer and supporting layer and absorbed layer.
Although these solutions are arranged, still exist many shortcomings.In detail, also need extra technology to form silicon oxynitride layer and to replace the heating of steam still can cause the distortion on top.In addition, the formation of back sheet also needs extra operation and has reduced the INFRARED ABSORPTION zone.
Summary of the invention
Therefore, the invention is intended to provide a kind of bolometric infrared sensors and manufacture method thereof, to eliminate owing to the limitation of prior art and one or more problems that shortcoming is brought with double-layer structure.
A main purpose of the present invention is to provide a kind of bolometric infrared sensors and manufacture method thereof with double-layer structure, it can improve absorptivity by being used for the design of the ultrared spectroscope of resonance absorption, by forming that resilient coating can prevent because the transducer distortion that the stress that heating produces causes and can optimize pixel structure.
For realizing these purposes and other advantage and according to purpose of the present invention, as concrete and wide in range description herein, the invention provides a kind of infrared sensor that reads integrated circuit (Read Out IC) (hereinafter being referred to as " ROIC ") substrate and a plurality of pixels that comprises, described pixel comprises first resilient coating that is positioned on the described ROIC substrate; Be positioned at the bottom that comprises reflective metal layer on described first resilient coating; What be positioned at described bottom top is used for the ultrared cavity of resonance absorption; Upper strata, this upper strata comprise first insulating barrier that is positioned at described cavity top, be positioned at second resilient coating on described first insulating barrier, be positioned at bolometer layer on described second resilient coating, be positioned at second insulating barrier on the described bolometer layer and be positioned at absorption-transport layer on described second insulating barrier; And be used to support at least one pair of fixture on the described ROIC substrate of being positioned at of described upper strata.
In addition, another object of the present invention realizes that by the infrared sensor that comprises ROIC substrate and a plurality of pixels this pixel comprises: be positioned at the bottom that comprises reflective metal layer on the described ROIC substrate; Be positioned at described bottom top and be used for the ultrared cavity of resonance absorption; Upper strata, this upper strata have about the diagonal symmetrical structure of described pixel and the bolometer layer that has fixture and be positioned at absorption-transport layer above and below; Be positioned at described pixel end each other in diagonal angle relative first fixture and second fixture, wherein said second fixture as with electrode that is connected in the read access terminal on the described ROIC substrate and described second fixture between distance less than the distance between first fixture.
And another purpose of the present invention realizes that by the infrared sensor that comprises ROIC substrate and a plurality of pixels it comprises: be positioned at the bottom that comprises reflective metal layer on the described ROIC substrate; Be positioned at described bottom top and be used for the ultrared cavity of resonance absorption; Upper strata with sandwich shape, described sandwich shape comprise absorption-transport layer of having incision tract therebetween and in the bolometer layer of the above and below of described absorption-transport layer; And the edge that is arranged on described pixel is used to support the fixture that described upper strata also is used as electrode.
In addition, another purpose of the present invention realizes by the method for the manufacturing infrared sensor that comprises the steps: form reflective metal layer on the ROIC substrate; The top that is coated in deposition of sacrificial layer on the described reflective metal layer and removes described sacrifice layer by plasma by SOP; Bolometer layer and absorption-transport layer are set on described sacrifice layer; In described sacrifice layer, bolometer layer and absorption-transport layer, form via; Metal material is inserted in the described via to form the fixture as electrode; And by removing remaining sacrifice layer formation cavity.
Description of drawings
Can understand further purpose of the present invention and advantage more fully by the following detailed description with accompanying drawings, in the accompanying drawings:
Fig. 1 is the perspective view according to the bolometric infrared sensors with double-layer structure of art methods;
Fig. 2 is the perspective view according to the bolometric infrared sensors with double-layer structure of embodiment of the present invention;
Fig. 3 is the sectional view according to the bolometric infrared sensors with double-layer structure of execution mode shown in Figure 2;
Fig. 4 is the perspective view of the bolometric infrared sensors with double-layer structure of another execution mode according to the present invention;
Fig. 5 is the sectional view according to the bolometric infrared sensors with double-layer structure of execution mode shown in Figure 4;
Fig. 6 is the perspective view of the bolometric infrared sensors with double-layer structure of another execution mode according to the present invention;
Fig. 7 is the perspective view according to the bolometric infrared sensors with double-layer structure of execution mode shown in Figure 6;
Fig. 8 is the vertical view of the pixel of the bolometric infrared sensors with double-layer structure of another execution mode according to the present invention;
Fig. 9 is the sectional view along the A-A ' line drawing among Fig. 8;
Figure 10 is the perspective view of the bolometric infrared sensors with double-layer structure of another execution mode according to the present invention;
Figure 11 is the sectional view along the C-C ' line drawing among Figure 10;
Figure 12 to Figure 15 is the sectional view along the A-A ' line drawing among Fig. 8, and it has described the manufacture process of the bolometric infrared sensors with double-layer structure;
Figure 16 is for describing the chart according to the absorptivity of the bolometric infrared sensors with double-layer structure of the present invention.
Embodiment
Be described with reference to the accompanying drawings preferred implementation of the present invention now.
Fig. 2 to Figure 11 shows perspective view, sectional view and the vertical view according to the unit pixel of the bolometric infrared sensors with double-layer structure of embodiment of the present invention.
According to the present invention, the infrared ray sensor with double-layer structure and 50 μ m * 50 μ m unit pixels comprises bottom 100, upper strata 200, the cavity 300 between two-layer and fixture (anchor) 401,402,403,404a, 404b, 404c, the 404d and 405 that is used to support upper strata 200.
Be provided with more than a pair of fixture in the end of each pixel.Each fixture can play electrode.Have the height between 1 μ m and 3 μ m and remain sky at the cavity 300 between bottom 100 and the upper strata 200.
Bolometer layer 202,212,222,232 and 252 (hereinafter be referred to as " 2x2) and absorption-transport layer 204,214,224,234 and 254 (hereinafter be referred to as " 2x4) be arranged on the cavity 300.The material of bolometer layer 2x2 is selected from by Ti, TiO
x, VO
xAnd the material group of doped amorphous silicon composition.Bolometer layer 2x2 or be arranged on the upper strata 200 or have specific pattern.For example, the bolometer layer 2x2 that is made of titanium can have the scope of preestablishing 300
(dust) and 1500
Thickness between (dust) and predefined area than (that is, the area between bolometer layer and the upper strata than) so that duty factor (that is, absorbing ultrared effective coverage) surpasses 50%.By TiO
xThe bolometer layer 2x2 that makes can have scope 500
(dust) and 5000
Thickness between (dust).The bolometer layer 2x2 that is made by doped amorphous silicon can have scope 500
(dust) and 3000
Thickness between (dust) and can designing makes its area than surpassing 80%.
Absorption-transport layer 2x4 is arranged on the top surface on upper strata 200 to improve absorptivity.At this, absorption-transport layer 2x4 is by to from the infrared ray of reflective metal layer 1x2 reflection and be transferred to the destructive interference between the infrared ray of absorption-transport layer 2x4 and absorb infrared ray again.Absorbing in order to carry out this, is that the position of λ/4 (λ is detected ultrared centre wavelength) is provided with absorption-transport layer 2x4 to absorb infrared ray in cavity 300 at distance reflective metal layer 1x2 again.
Preferably, the material of absorption-transport layer 2x4 is selected from the material group of being made up of Ti (titanium), TiN (titanium nitride) and Cr (chromium).Preferably, the thickness of the absorption-transport layer 2x4 of Ti or TiN material is between 20
(dust) is to 100
Between (dust), the thickness of the absorption-transport layer 2x4 of Cr material is then between 20
(dust) is to 200
Between (dust).In addition, first insulating barrier can be arranged on the below of bolometer layer 2x2.Second insulating barrier and second resilient coating can be arranged between bolometer layer 2x2 and the absorption-transport layer 2x4.At this, first and second insulating barriers are preferably made by silicon dioxide (SiO2).Second resilient coating is preferably made by the material that comprises silicon nitride.Upper strata 200 can comprise and be used for heat-insulating insulation cuts and be used to the etch-hole that reduces stress and form cavity 300.Each thermal time constant of each layer of formation infrared sensor unit pixel preferably arrives between the 5msec (millisecond) between 2msec (millisecond) in 33msec (millisecond).At this, this thermal time constant is meant that infrared sensor is cooled to the time of cost in 37% o'clock of the difference between the temperature that its initial temperature and infrared sensor increase.Thermal time constant calculates based on following equation: " thermal time constant=heat capacity/thermal conductivity ".If the time difference between two continuous pictures, then this thermal time constant should be less than 33msec (millisecond) to prevent producing afterimage in naked eyes greater than 33msec (millisecond).
Describe the preferred embodiments of the present invention in detail below with reference to accompanying drawing.
With reference to figure 2 and Fig. 3, the bolometric infrared sensors with double-layer structure comprises the cavity 300 between bottom 100, upper strata 200 and bottom and the upper strata.
Bolometer layer is made into
The shape of pattern and its width between 3 μ m between the 9 μ m.The rectangular area area that bolometer layer 202 is connected to fixture 401 is between 5 μ m * 5 μ m and 10 μ m * 10 μ m.Absorption-transport layer 204 is made by Ti (titanium) material, and its thickness is between 40
(dust) and 70
Between (dust).
Next with reference to figure 4 and Fig. 5, another upper strata 200 with bolometric infrared sensors of double-layer structure comprises bolometer layer 212, absorption-transport layer 214, as electrode and be used for the fixture 402 that bottom 100 is connected with upper strata 200 and be used for heat-insulating insulation cuts 216.Bolometer layer 212 and absorption-transport layer 214 all are arranged on the whole upper strata 200.Bolometer layer is preferably made by doped amorphous silicon.
Next with reference to figure 6 and Fig. 7, another upper strata 200 with bolometric infrared sensors of double-layer structure comprises first insulating barrier 220, is positioned at second resilient coating 221 and bolometer layer 222 on first insulating barrier.At this, first insulating barrier is preferably the silicon dioxide (SiO of thickness between 0.65 ± 0.1 mu m range
2).Second resilient coating, 221 preferred uses comprise silicon nitride (SiN
x) the material of thickness between 0.2 ± 0.05 mu m range make.The bolometer layer 222 preferred materials that comprise Ti or TiOx (x=1 to 3) that use that are positioned at second breaker topping are made.The thickness of the bolometer layer of titanium (Ti) material is between 300
(dust) and 1500
Between (dust), and TiO
xThe thickness of the bolometer layer of (titanium oxide) material is between 500
(dust) and 5000
Between (dust).For alleviating stress, first insulating barrier and second resilient coating can replace and repeatedly form below bolometer layer 222.Subsequently, second insulating barrier of being made by silicon dioxide 223 is formed on the bolometer layer 222, and absorption-transport layer 224 is arranged on described second insulating barrier.The insulation cuts (not shown) forms on upper strata 200.
Next, with reference to figure 8 and Fig. 9 (along the sectional view of the A-A ' line drawing among Fig. 8), the upper strata 200 of another bolometric infrared sensors with double-layer structure is butterfly-like shape about the diagonal symmetry of pixel.This butterfly-like shape can minimize the infrared sensor distortion that is caused by shear stress (shear stress).In addition, infrared sensor reduces impedance by making the distance between the first fixture 404a and the 404b greater than the distance between the second fixture 404c and the 404d, therefore effectively and efficiently surveys infrared ray.In addition, upper strata 200 comprises and is used to remove the etch-hole 235 of sacrifice layer (sacrificial layer) (not shown) and be used for heat-insulating insulation cuts.The second fixture 404c and 404d not only support upper strata 200, also simultaneously as be arranged on the ROIC substrate on the electrode that is connected of read access terminal.In Fig. 8 the sectional view (not shown) of B-B ' line drawing except that the first electrode 404a and 404b not with identical with Fig. 9 the read access terminal is connected.In addition, upper strata 200 also further has the insulating barrier or the resilient coating of the bolometer layer of being arranged on 232 tops and/or below.Bolometer layer 232 is made by N type or P type doped amorphous silicon and is preferably had between 500
(dust) and 3000
Thickness between (dust) scope.
At last, with reference to Figure 10 and Figure 11 (along the sectional view of the C-C ' line drawing among Figure 10), another upper strata 200 with bolometric infrared sensors of double-layer structure comprises absorption-transport layer 254 and the bolometer layer 252 that is provided with simultaneously in the above and below of this absorption-transport layer 254.In the middle of absorption-transport layer 254, form incision tract 257.Be used for heat-insulating insulation cuts 256 be arranged on fixture 405 around.In the method for the manufacturing infrared sensor of prior art, absorption-transport layer can be stretched owing to being heated in heat treatment process.In addition, the thermal stress of operation generation can be applied to the upper strata 200 that comprises absorption-transport layer.These problems will cause upper strata 200 distortion or the reliable type of infrared sensor will be produced adverse influence.Yet, in infrared sensor according to the present invention, the sandwich shape structure that bolometer layer 252 is arranged on the above and below of absorption-transport layer 254 is solved these problems by employing.For example, if compression and/or tensile stress are applied on bolometer layer 252 or the absorption-transport layer 254, then this sandwich shape structure can be offset described stress, thereby has prevented upper strata 200 distortion.And what produce in the manufacture process that is used to form cavity 300 can increase the temperature of ROIC substrate 151 from the heat of plasma, hot plate and chamber, and the absorption-transport layer 254 that can stretch, thereby produces stress.Utilize sandwich shape structure and cutting zone 257 can be removed in upper strata 200 from stress.
Described sandwich shape structure also can reduce thermal loss.Specifically, the destructive interference that takes place in absorption-transport layer 254 causes absorbing infrared ray.Then, described heat is by bolometer layer 252 transmission.Therefore, sandwich shape structure can prevent the thermal loss by 254 generations of absorption-transport layer.And, be positioned at absorption-transport layer 254 middle cutting zones 257 and replaced etch-hole of the prior art to alleviate stress, thereby increased effective duty factor and reduced impedance.
The impedance of bolometer layer 252 is determined by the cutting zone 257 that removes absorption-transport layer 254.Therefore, the impedance of bolometer layer 252 (hereinafter using " R " to represent) calculates by Rs * (L/W) that (" L " is the length of pixel and " R for the width of cutting zone 257, " W "
s" be film resistor).Because thickness is 2000 dusts
The R of amorphous silicon
sBeing 10ohm/sq, is 50 μ m if L is 2 μ m and W, and R will be 400 kilohms (kohm), and it is littler than the impedance (that is, about 500 kilohms) according to the method for prior art.Therefore, can form the thin layer of expectation impedance by the value of adjusting L/W.
Along with the bridge 259 that forms by insulation cuts 256 becomes more and more narrow and more and more longer, can increase hot short-circuiting effect (thermal short effect).Yet, also should consider to have cantilever shape upper strata 200 safety supports and determine the width and the length of bridge 259.For example, if " W " is 50 μ m, the width of preferred bridge 259 between between the scope of 1.5 μ m and 5 μ m and its length between the scope of 4 μ m and 35 μ m.
In addition, can have as shown in Figure 8 symmetrical structure (that is buttferfly-type) as Figure 10 and the bolometric infrared sensors with double-layer structure shown in Figure 11.Specifically, bolometric infrared sensors can comprise the upper strata with sandwich type structure, and wherein cutting zone distributes and has diagonal symmetrical structure about pixel along the diagonal of pixel.At this, fixture comprises first fixture and second fixture.First fixture and second fixture are in the end of pixel along the diagonal angle toward each other.Second fixture as be arranged on the ROIC substrate on the electrode that is connected of read access terminal.Distance between second fixture is less than the distance between first fixture.
Describe the step of making bolometric infrared sensors in detail to Figure 15 (along the sectional view of the A-A ' line drawing among Fig. 8) below with reference to Figure 12 with double-layer structure.
With reference to Figure 12, prepare the ROIC substrate 131 that comprises the read access terminal on it.Subsequently, by vacuum deposition or sputtering technology and depositing electrode pad 135 and reflective metal layer 132 and to its composition.First resilient coating of separated pixel can be formed for before to electrode pad 135 and reflective metal layer 132 compositions insulating.At this, first resilient coating is made by the material that comprises silicon nitride.
Then, with reference to Figure 13, sacrifice layer 350 forms on established structure and passes through plasma etching and remove its top 350b.Apply organic thin layer (as, ACCUFLO 1513 EL of Honeywell) by SOP (rotating on condensate) technology, sacrifice layer 350 has the thickness between 0.5 μ m and 3.5 mu m ranges.In the method for prior art, SOP technology leaves the vestige that rotation applies on the surface of sacrifice layer 350.Even after the subsequent technique that forms bolometer layer (not shown) and removal sacrifice layer was finished, these vestiges still can be stayed on the lower surface of bolometer layer, this will cause the bolometer layer distortion.For addressing this problem, utilize Ar/O
2Plasma is removed 100 dusts with the top of sacrifice layer 350b
With 2000 dusts
Between thickness to reduce stress.
Subsequently, with reference to Figure 14, bolometer layer 232 is formed on the sacrifice layer 350a, and absorption-transport layer 234 is deposited on the described bolometer layer.In sacrifice layer, bolometer layer and the absorption-transport layer of established structure, form the via 450 and the insulation cuts (236 among Fig. 8) of penetrating electrode pad 135.Preferably, bolometer layer 232 by thickness between 500 dusts
With 3000 dusts
N type between the scope or P type amorphous silicon are made.
Preferably, via and insulation cuts are selected from by CF by use
4, CHF
3The gas of the gas group of forming with Ar carries out plasma etching and forms.Other insulating barrier (not shown) can be formed directly in above the bolometer layer and/or below.For example, first insulating barrier of being made by silica can be formed on the below of bolometer layer 232.And can be formed between bolometer layer 232 and the absorption-transport layer 234 by plasma reinforced chemical vapour deposition (PECVD) technology by second insulating barrier that silicon nitride is made.
Subsequently, with reference to Figure 15, the metal material that will be used for contacting is filled in via and its composition also is used as the fixture 404c and the 404d of electrode with formation.Then by oxygen (O
2) plasma etching and sacrifice layer 350a is removed to form cavity 300.
Figure 16 shows the simulation result that has the bolometric infrared sensors absorptivity of double-layer structure according to of the present invention.To be 7 μ m surpass 95% to the ultrared absorptivity of 14 μ m to centre wavelength.
As mentioned above, the invention provides an embodiment of the manufacture method of the bolometric infrared sensors with double-layer structure, it comprises the steps: to form contact pad and reflective metal layer on the ROIC substrate; Form sacrifice layer by the SOP coating processes; Remove the top of described sacrifice layer by plasma etching; Form bolometer layer and absorption-transport layer; Expose the predetermined portions that is used for fixing part by the described sacrifice layer of etching; Utilize the described part that exposes that is used for fixing part to form electrode; Form cavity by removing sacrifice layer.
At this, can form the step of absorption-transport layer in the last execution of manufacture process.For example, the invention provides another embodiment of the manufacture method of the bolometric infrared sensors with double-layer structure, it comprises the steps: to form contact pad and reflective metal layer on the ROIC substrate; Form sacrifice layer by the SOP coating processes; Remove the top of described sacrifice layer by plasma etching; On described sacrifice layer, form bolometer layer; Expose the predetermined portions that is used for fixing part by the described sacrifice layer of etching; Utilize the described part that exposes that is used for fixing part to form electrode; Form cavity by removing sacrifice layer; Form absorption-transport layer.
Utilize Fig. 8 and Fig. 9 to carry out exemplary and description popularity to the manufacture method with bolometric infrared sensors of double-layer structure according to the present invention.Yet the method for this manufacturing infrared sensor also can easily be applied to Fig. 2 to other execution mode shown in Figure 11.Therefore, omitted detailed description at this to the manufacture method of other execution mode.
Though at this method, device and the project made have been carried out exemplary description, the coverage of present patent application is not limited thereto.On the contrary, present patent application has covered all directly or fall into method, device and the project of the manufacturing that is useful in the claims protection range according to doctrine of equivalents.
Industrial applicability
Therefore, can according to bolometric infrared sensors and the manufacture method thereof with double-layer structure of the present invention Utilize spectroscope method raising ir-absorbance and simplify manufacture process. And, according to survey radiation of the present invention Thermal infrared sensor can be applicable to the contactless thermal transpiration diagnostor to multiple object, such as fire hat, in inspection Repairing the helmet, the night-vision devices in the automobile, supervision camera, the printed circuit board (PCB) used when working in hole and the tunnel reaches Wafer. In addition, also can be applicable to such as the human body temperature vision according to bolometric infrared sensors of the present invention The night vision goggles of diagnostor, personal armament, the night vision system that monitors the beach and warning post (guard post) Military installation.
Claims (21)
1, a kind of infrared sensor that reads integrated circuit substrate and a plurality of pixels that comprises, described pixel comprises:
Be positioned at first resilient coating that reads on the integrated circuit substrate;
Be positioned at the bottom that comprises reflective metal layer on described first resilient coating;
Be positioned at described bottom top and be used for the ultrared cavity of resonance absorption;
The upper strata, this upper strata comprises first insulating barrier that is positioned at described cavity top, is positioned at second resilient coating on described first insulating barrier, is positioned at bolometer layer on described second resilient coating, is positioned at second insulating barrier on the described bolometer layer and is positioned at absorption-transport layer on described second insulating barrier; And
Be used to support described at least one pair of fixture that reads on the integrated circuit substrate of being positioned at of described upper strata.
2, a kind of infrared sensor that reads integrated circuit substrate and a plurality of pixels that comprises, described pixel comprises:
Be positioned at the described bottom that comprises reflective metal layer that reads on the integrated circuit substrate;
What be positioned at described bottom top is used for the ultrared cavity of resonance absorption;
Upper strata with sandwich shape, described sandwich shape comprise having absorption-transport layer that is positioned at its middle incision tract and the bolometer layer that is positioned at described absorption-transport layer above and below; And
The fixture that the edge that is arranged on described pixel is used to support described upper strata and is used as electrode.
3, infrared sensor according to claim 1 and 2, it is characterized in that, described upper strata has the diagonal symmetrical structure about described pixel, and described fixture is included in end first fixture respect to one another and second fixture of described pixel, wherein said second fixture as with the electrode that is connected in the described read access terminal that reads on the integrated circuit substrate and the distance between described second fixture less than the distance between first fixture.
4, infrared sensor according to claim 1 and 2 is characterized in that, the distance between described bolometer layer and the described absorption-transport layer is λ/4.
5, infrared sensor according to claim 2 is characterized in that, also further comprises first resilient coating that is positioned at described reflective metal layer below.
6, infrared sensor according to claim 1 is characterized in that, described first resilient coating and second resilient coating are made by the material that comprises silicon nitride.
7, infrared sensor according to claim 1 is characterized in that, described first insulating barrier and second insulating barrier are made by silica.
8, infrared sensor according to claim 1 and 2 is characterized in that, described reflective metal layer comprises the material that is selected from the group of being made up of titanium and aluminium.
9, infrared sensor according to claim 1 and 2 is characterized in that, described bolometer layer is by being selected from by titanium, TiO
x, VO
xAnd the material in the group of doped amorphous silicon composition is made.
10, infrared sensor according to claim 1 and 2 is characterized in that, described absorption-transport layer is made by the material that is selected from the group of being made up of Ti, TiN and Cr.
11, infrared sensor according to claim 10 is characterized in that, the thickness of described absorption-transport layer of making by Ti or TiN material between 20 dusts to 100 dusts.
12, infrared sensor according to claim 10 is characterized in that, the thickness of described absorption-transport layer of making by the Cr material between 20 dusts to 200 dusts.
13, a kind of method of making infrared sensor comprises the steps:
Form reflective metal layer reading on the integrated circuit substrate;
The top that is coated in deposition of sacrificial layer on the described reflective metal layer and removes described sacrifice layer by plasma by SOP;
Bolometer layer and absorption-transport layer are set on described sacrifice layer;
In described sacrifice layer, bolometer layer and absorption-transport layer, form via;
Metal material is inserted in the described via to form the fixture as electrode; And
Form cavity by removing remaining sacrifice layer.
14, method according to claim 13 is characterized in that, removes described remaining sacrifice layer by the oxygen gas plasma cineration technics.
15, method according to claim 13 is characterized in that, by utilizing Ar/O
2The plasma process of gas is removed the top of described sacrifice layer.
16, method according to claim 15 is characterized in that, the thickness of described removed sacrifice layer between 100 dusts between 2000 dusts.
17, method according to claim 13 is characterized in that, described bolometer layer is by being selected from by Ti, TiO
x, VO
xAnd the material in the group of doped amorphous silicon composition is made.
18, method according to claim 13 is characterized in that, described absorption-transport layer is made by the material that is selected from the group of being made up of Ti, TiN and Cr.
19, method according to claim 18 is characterized in that, the thickness of described absorption-transport layer of making by Ti or TiN material between 20 dusts to 100 dusts.
20, method according to claim 18 is characterized in that, the thickness of described absorption-transport layer of making by the Cr material between 20 dusts to 200 dusts.
21, method according to claim 13 is characterized in that, forms described via by plasma etching, and the gas that wherein said plasma etching uses is selected from by CF
4, CHF
3In the group of forming with Ar.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2003-0070410A KR100539395B1 (en) | 2003-10-09 | 2003-10-09 | Uncooled infrared sensor with two-layer structure |
| KR1020030070410 | 2003-10-09 | ||
| KR1020040061285 | 2004-08-04 | ||
| KR1020040070714 | 2004-09-06 |
Publications (2)
| Publication Number | Publication Date |
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| CN1864274A CN1864274A (en) | 2006-11-15 |
| CN100552982C true CN100552982C (en) | 2009-10-21 |
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| CNB2004800293609A Expired - Fee Related CN100552982C (en) | 2003-10-09 | 2004-09-09 | Bolometric infrared sensors and manufacture method thereof with double-layer structure |
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| Country | Link |
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| KR (1) | KR100539395B1 (en) |
| CN (1) | CN100552982C (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100785738B1 (en) * | 2006-06-19 | 2007-12-18 | 한국과학기술원 | Bolometer |
| CN101183690B (en) * | 2007-12-13 | 2012-10-10 | 上海集成电路研发中心有限公司 | Infrared detector and method of producing the same |
| KR100869548B1 (en) * | 2008-05-20 | 2008-11-19 | 아이쓰리시스템 주식회사 | Bolometric infrared sensor improved signal to noise ratio(snr) and thereof |
| CN102479879A (en) * | 2010-11-29 | 2012-05-30 | 比亚迪股份有限公司 | Preparation methods of amorphous silicon thermosensitive film and uncooled amorphous silicon microbolometer |
| CN103569946B (en) * | 2012-07-31 | 2015-10-07 | 昆山光微电子有限公司 | Non-brake method light reads infrared imaging focus plane array detector preparation method |
| DE102012220207A1 (en) * | 2012-11-07 | 2014-05-08 | Robert Bosch Gmbh | An image pixel device for detecting electromagnetic radiation, a sensor array for detecting electromagnetic radiation and a method for detecting electromagnetic radiation by means of an image pixel device |
| CN106206830B (en) * | 2016-07-19 | 2018-07-06 | 中国科学院重庆绿色智能技术研究院 | A kind of infrared detector based on graphene interlayers formula infrared absorption layer |
| CN110164994B (en) * | 2018-03-16 | 2021-04-09 | 北京纳米能源与系统研究所 | InGaN/GaN multi-quantum well solar cell |
| CN109596225A (en) * | 2018-12-20 | 2019-04-09 | 西安工业大学 | A kind of infrared detector and preparation method thereof with high-effect resonant cavity |
| CN113432724B (en) * | 2021-06-25 | 2023-03-24 | 北京北方高业科技有限公司 | Uncooled tuned infrared detector |
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2003
- 2003-10-09 KR KR10-2003-0070410A patent/KR100539395B1/en not_active IP Right Cessation
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| KR20050034489A (en) | 2005-04-14 |
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