CN100547743C - Substrate processing method using same and base plate processing system - Google Patents

Substrate processing method using same and base plate processing system Download PDF

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CN100547743C
CN100547743C CNB2007101666683A CN200710166668A CN100547743C CN 100547743 C CN100547743 C CN 100547743C CN B2007101666683 A CNB2007101666683 A CN B2007101666683A CN 200710166668 A CN200710166668 A CN 200710166668A CN 100547743 C CN100547743 C CN 100547743C
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gas
substrate
film
base material
oxide
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CN101174562A (en
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林大辅
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Abstract

Can prevent to make the substrate processing method using same of the productivity ratio reduction of semiconductor device by substrate.Wafer supply HF gas to having heat oxide film, bpsg film and deposited film uses fluorinated, acid selective etch bpsg film and deposited film thus.The H that generates during etching 2SiF 6The residuals decomposes becomes HF and SiF 4

Description

Substrate processing method using same and base plate processing system
Technical field
The present invention relates to substrate processing method using same and base plate processing system and more specifically, relate to the substrate processing method using same that is used for removing hard mask and deposited film from substrate, and the base plate processing system that is used to implement this substrate processing method using same.
Background technology
Semiconductor chip W shown in Fig. 7 is known, and it has monocrystalline silicon substrate base material (substrate base) 71, forms by SiO with layer form thereon 2The heat oxide film of making 72, film 73,74 and such as the oxide-film of BPSG (boron-phosphorosilicate glass) film 75.In order on the monocrystalline silicon substrate base material 71 of wafer W, to form hole or ditch (groove), in reduced pressure atmosphere, use the plasma of handling the gas generation by the halogen system that waits such as HBr (hydrogen bromide), and use bpsg film 75 as hard mask, silicon substrate base material 71 is carried out dry ecthing.At this moment, plasma and silicon (Si) react, and therefore form the deposited film 76 of SiOBr on hole or analog surface.Deposited film 76 is used to suppress monocrystalline silicon substrate base material 71 by dry ecthing.
The bpsg film 75 of wafer W and deposited film 76 may cause the deficiencies in electrical conductivity of the semiconductor device made by wafer W, therefore must remove these films.In order to remove hard mask, for example bpsg film 75, the use wet etching (referring to, for example, the open No.2005-150597 of Japanese publication).
Because wet etching uses chemical solution, the wet etching device can not be installed in the identical base plate processing system together with the device for dry etching that dry ecthing wafer W in reduced pressure atmosphere is used.In other words, the wet etching device must be installed in the position different with device for dry etching.In addition, the wafer W of having used device for dry etching to form hole or analog on its monocrystalline silicon substrate base material 71 must shift out from device for dry etching, is sent in surrounding air in the wet etching device then.Therefore, the processing substrate process complicates.
In addition, the deposited film of making by SiOBr 76 of wafer W in the process that wafer W transmits in surrounding air may with the reaction of moisture in the surrounding air.Therefore, the exposure time limit (Q-time) of necessary control wafer W.More specifically, the exposure time limit must foreshorten to minimum.The control that exposes the time limit needs appreciable man-hour.
In other words, the removal of bpsg film 75 and deposited film 76 causes being made by wafer W the productivity ratio reduction of semiconductor device.
Summary of the invention
The invention provides the substrate processing method using same and the base plate processing system that can prevent to make the productivity ratio reduction of semiconductor device by substrate.
According to a first aspect of the invention, provide to be used for handling and had the monocrystalline silicon substrate base material, first oxide-film by thermal oxidation formation, and the substrate processing method using same of the substrate of the second impure oxide-film, part monocrystalline silicon substrate base material comes out by first and second oxide-films, it comprises that using halogen is the plasma etch step of the monocrystalline silicon substrate base material that exposes of the plasma etching of gas, to the HF gas supply step of supply substrate HF gas, and the heating steps of the substrate of HF gas has been supplied in heating.
According to substrate processing method using same of the present invention, it with halogen the monocrystalline silicon substrate base material that the plasma etching of gas partly comes out by first oxide-film that formed by thermal oxidation and the second impure oxide-film, to supply substrate HF gas, and heated substrates.When with halogen being the plasma etching monocrystalline silicon substrate base material of gas, form deposited film.Generate fluorinated, acid by HF gas, its selective etch deposited film and second oxide-film and produce can decomposes residuals.Therefore, the deposited film and second oxide-film can be removed in dry environment, and therefore, the device that etching monocrystalline silicon substrate base material is used can be installed in the identical base plate processing system with the device that second oxide-film is used together with the removal deposited film.So, exposure of substrates just can need not be removed the deposited film and second oxide-film of substrate with etched monocrystalline silicon substrate base material in surrounding air, can simplify the processing substrate method thus and can eliminate the necessity that control basal plate is exposed to the time limit in the surrounding air, thereby can prevent that the productivity ratio of being made semiconductor device by this substrate from reducing.
In the present invention, substrate can not be exposed in the surrounding air in plasma etch step, HF gas supply step and substrate heating steps process.
In this case, substrate by halogen be the plasma etching of gas and to supply substrate HF gas then with in the substrate heating, substrate is not exposed in the surrounding air.This guarantees and needn't control the time limit of exposure of substrates in surrounding air.
Can be in the substrate heating steps at N 2Heated substrates in the gaseous environment.
In this case, substrate is at N 2Heat in the gaseous environment.N 2Gas forms the air-flow of the residuals of catching and transmit decomposes.Therefore, can remove the deposited film and second oxide-film reliably.
According to a second aspect of the invention, provide to be used for handling and had the monocrystalline silicon substrate base material, first oxide-film by thermal oxidation formation, and the substrate processing method using same of the substrate of the second impure oxide-film, part monocrystalline silicon substrate base material comes out by first and second oxide-films, it comprises that using halogen is the plasma etch step of the monocrystalline silicon substrate base material that exposes of the plasma etching of gas, contain NH at least to the HF gas supply step of supply substrate HF gas with to the supply substrate of having supplied HF gas 3The purgative gas supply step of the purgative gas of gas.
Use this processing substrate method, it with halogen the monocrystalline silicon substrate base material of the substrate that partly comes out by first oxide-film that forms by thermal oxidation and the second impure oxide-film of the plasma etching of gas, to supply substrate HF gas, and further contain NH at least to supply substrate 3Purgative gas.When with halogen being the plasma etching monocrystalline silicon substrate base material of gas, form deposited film.The fluorinated, acid selective etch deposited film and second oxide-film that is generated by HF gas also produces residuals.NH 3Gas and residuals reaction are to produce the product of easy distillation.Because product distils easily, can remove the deposited film and second oxide-film in dry environment, therefore, the device that etching monocrystalline silicon substrate base material is used can be installed in the identical base plate processing system with the device that second oxide-film is used together with the removal deposited film.Behind the monocrystalline silicon substrate base material of etching substrates, exposure of substrates just can need not be removed the deposited film and second oxide-film in surrounding air.Can simplify the processing substrate method thus and can eliminate the needs that control basal plate is exposed to the time limit in the surrounding air, thereby can prevent that the productivity ratio of being made semiconductor device by this substrate from reducing.
This substrate processing method using same allows substrate not to be exposed in the surrounding air in plasma etch step, HF gas supply step and purgative gas supply step.
In this case, substrate by halogen be the plasma etching of gas and to supply substrate HF gas and purgative gas in, therefore substrate is not exposed in the surrounding air, needn't control basal plate be exposed to the time limit in the surrounding air.
According to the 3rd execution mode of the present invention, the base plate processing system of the substrate that is used to handle first oxide-film that has the monocrystalline silicon substrate base material, form by thermal oxidation and impure second oxide-film is provided, part monocrystalline silicon substrate base material comes out by first and second oxide-films, the plasma etching apparatus of the monocrystalline silicon substrate base material that the plasma etching that it comprises suitable use halogen is gas exposes, suitable HF gas supply step and the suitable substrate heating equipment that heats the substrate of having supplied HF gas to supply substrate HF gas.
Realized the confers similar advantages that obtains with substrate processing method using same by a first aspect of the present invention according to the base plate processing system of this third aspect.
This base plate processing system can comprise the base plate transfer device between plasma etching apparatus, HF gas supply device and substrate heating equipment, and this base plate transfer device is fit to transmit substrate so that substrate is not exposed in the surrounding air.
In this case, by halogen the plasma etching of gas and to supply substrate HF gas then in the process with substrate heating at substrate, substrate is not exposed in the surrounding air.Therefore, needn't control basal plate be exposed to the time limit in the surrounding air.
In this base plate processing system, the HF gas supply device can constitute by each free identical device with substrate heating equipment.
Use this base plate processing system, each free identical device of HF gas supply device and substrate heating equipment constitutes, and therefore, can reduce the size of base plate processing system.
According to a forth aspect of the invention, the base plate processing system of the substrate that is used to handle first oxide-film that has the monocrystalline silicon substrate base material, form by thermal oxidation and impure second oxide-film is provided, part monocrystalline silicon substrate base material comes out by first and second oxide-films, the plasma etching apparatus of the monocrystalline silicon substrate base material that the plasma etching that it comprises suitable use halogen is gas exposes, suitable HF gas to supply substrate HF gas are supplied step and are fit to and contains NH at least to the supply substrate of having supplied HF gas 3The purgative gas feeding mechanism of the purgative gas of gas.
Can produce confers similar advantages with substrate processing method using same acquisition by second execution mode of the present invention according to the base plate processing system of the 4th execution mode.
This base plate processing system can comprise the base plate transfer device between plasma etching apparatus, HF gas supply device and substrate heating equipment, and this base plate transfer device is fit to transmit substrate so that substrate is not exposed in the surrounding air.
In this case, substrate by halogen be the plasma etching of gas and to supply substrate HF gas and purgative gas in, substrate is not exposed in the surrounding air, thus needn't control basal plate be exposed to the time limit in the surrounding air.
Following illustrative embodiments according to the reference accompanying drawing is described further feature of the present invention as can be seen.
Description of drawings
Fig. 1 is the plan view of structure of the base plate processing system of schematically illustrated this execution mode;
Fig. 2 A is the cutaway view that shows along the inventiona gas treatment module among Fig. 1 of the intercepting of the line I-I among Fig. 1;
Fig. 2 B shows the zoomed-in view of the A part among Fig. 2 A;
Fig. 3 A to 3D shows the artwork of the substrate processing method using same of implementing by the base plate processing system shown in Fig. 1, wherein Fig. 3 A shows plasma etch step, Fig. 3 B shows HF gas supply step, Fig. 3 C shows residuals and deposits on the silicon substrate base material, and Fig. 3 D shows the removal of residuals;
Fig. 4 shows the cutaway view of the change of the inventiona gas treatment module shown in Fig. 1;
Fig. 5 shows the cutaway view of the inventiona gas treatment module of base plate processing system second embodiment of the invention;
Fig. 6 A to 6E shows the artwork of the substrate processing method using same of implementing by the base plate processing system of second execution mode, wherein Fig. 6 A shows plasma etch step, Fig. 6 B shows HF gas supply step, Fig. 6 C shows residuals and deposits on the silicon substrate base material, and Fig. 6 D shows the removal of residuals; And
Fig. 7 is the cutaway view that schematically shows the structure of the substrate with hole surface, forms the SiOBr deposited film thereon.
Embodiment
Referring now to the accompanying drawing that shows preferred implementation, describe the present invention in detail.
At first, the base plate processing system to first embodiment of the invention describes.
Fig. 1 is the plan view of structure that schematically shows the base plate processing system of this execution mode.
As shown in fig. 1, substrate board treatment 10 is by the hexagonal delivery module 11 (base plate transfer device) that has as shown in plane graph, be connected to two plasma process modules 12 on the side of delivery module 11,13 (plasma etching apparatus), thereby be connected on the another side of delivery module 11 towards plasma process modules 12, two plasma process modules 14 of 13,15 (plasma etching apparatus), be adjacent to the inventiona gas treatment module 16 (HF gas supply device) that is provided with and is connected with plasma process modules 13 with delivery module 11, with plasma process modules 15 adjacent settings and the heat treated module 17 (substrate heating equipment) that is connected with delivery module 11, as the loading module 18 of rectangle transfer chamber, and two between delivery module 11 and loading module 18 to connect their load- lock module 19,20 constitute.
The transferring arm 21 of can bending/elongation and rotating is housed in the delivery module 11.Transferring arm 21 can transmit wafer W between plasma process modules 12 to 15, inventiona gas treatment module 16, heat treated module 17 and load- lock module 19,20.
Plasma process modules 12 to 15 comprises the treatment chamber that is used to hold wafer W separately.Each plasma process modules can be introduced halogen system and handle gas in this chamber, HBr gas for example, and in this chamber, produce electric field, thus produce plasma from the processing gas of introducing.By using this plasma, plasma process modules can etched wafer W.More specifically, the monocrystalline silicon substrate base material 71 of the wafer W shown in the etch figures(s) 7.
Fig. 2 A shows the cutaway view of the inventiona gas treatment module 16 that is intercepted along the line I-I among Fig. 1; And Fig. 2 B shows the zoomed-in view of the A part among Fig. 2 A.
As shown in Fig. 2 A, inventiona gas treatment module 16 comprises treatment chamber 22, be arranged on the wafer erecting bed 23 in this chamber 22, be arranged on chamber 22 tops with towards this spray head of 23 24, be used for discharging TMP (turbomolecular pump) 25a of gas and analog from chamber 22, and the APC between chamber 22 and TMP 25a (self-adaptive pressure control) valve 25b, it is variable butterfly valve.
Spray head 24 is made of the dish type gas supply unit 26 that wherein has buffer chamber 27.Buffer chamber 27 is via air vent hole 28 and chamber 22 internal communication, and with can be connected to the HF gas supply system (not shown) of buffer chamber 27 supply HF gases.Via air vent hole 28 the HF gas of being supplied is supplied to chamber 22 inside then.
As shown in Fig. 2 B, the air vent hole 28 that forms in the spray head 24 has a part of leading to chamber 22 and widening towards air vent hole one end separately.Thus, HF gas can effectively be diffused in the chamber 22.In addition, have a contraction on air vent hole 28 each comfortable its cross section, therefore, can prevent that any residuals or the analog that produce from flowing back to air vent hole 28 and entering buffer chamber 27 in chamber 22.
In inventiona gas treatment module 16, the heater (not shown) is installed in the sidewall of chamber 22, for example, heating element.Heat the sidewall of this chamber 22 by heating element, can prevent that the residuals that generates is attached on the sidewall of this chamber when using fluorinated, acid to remove bpsg film 75 and deposited film 76.
In addition, platform 23 has as thermostatic coolant chamber (not shown), and wherein circulation is in the cooling agent of predetermined temperature, for example cooling water or Galden (registered trade mark) fluid.Control the temperature of the wafer W on the upper surface that is fixed and held at platform 23 by the temperature of cooling agent.
Referring again to Fig. 1, heat treated module 17 comprises the treatment chamber that is used to hold wafer W.This chamber is provided with Halogen lamp LED, thin slice heater (sheet heater) or analog, and can heat the wafer W that is positioned at wherein.
Can reduce pressure to the inside of delivery module 11, plasma process modules 12 to 15, inventiona gas treatment module 16 and heat treated module 17.By vacuum gate valve 12a to 17a delivery module 11 is connected with plasma process modules 12 to 15, inventiona gas treatment module 16 and heat treated module 17.
In base plate processing system 10, the internal pressure of delivery module 11 remains on vacuum, and the internal pressure of loading module 18 remains on atmospheric pressure.For this reason, the connecting portion of load- lock module 19,20 between itself and delivery module 11 is provided with vacuum gate valve 19a, 20a, and the connecting portion between itself and loading module 18 is provided with atmospheric gate valve 19b, 20b, thus each load-lock module structure is become preparation vacuum transfer chamber, its internal pressure can be regulated.Load- lock module 19,20 further is provided with wafer erecting bed 19c, 20c, can be placed on this each wafer erecting bed 19c, 20c in the wafer W that transmits between loading module 18 and the delivery module 11 temporarily.
Except load- lock module 19,20, on loading module 18, connect three FOUP erecting beds 30, be used for arranging in advance the finder 31 of the wafer W that sends out from FOUP 29, and the first and second IMS ' s (Therma-Wave that are used to measure the surface state of wafer W, Inc. the integrated metrology system of Zhi Zaoing) 32 and 33, wherein each described FOUP erecting bed 30 is equipped with FOUP (front open type standard wafer box (front openingunified pod)) 29 separately, and this FOUP29 is the container that is fit to hold 25 wafer W.
Load- lock module 19,20 is connected on the longitudinal side wall of loading module 18, and is configured to, and loading module 18 is clipped between this load-lock module and the FOUP erecting bed towards three FOUP erecting beds 30.Finder 31 is set on the end longitudinally of loading module 18, and an IMS 32 is set on the other end longitudinally of loading module 18, and the 2nd IMS33 is set at three FOUP erecting bed 30 next doors.
Comprise the SCARA type both arms transferring arm 34 that is used to transmit wafer W in the loading module 18, and three load port 35 that form are with corresponding to FOUP erecting bed 30 in the sidewall of loading module 18.Transferring arm 34 will take out the corresponding FOUP 29 of wafer W from FOUP erecting bed 30 via load port 35, and load- lock module 19 and 20, finder 31, an IMS 32 and the 2nd IMS 33 are sent into and sent to the wafer W that shifts out.
The one IMS 32 is optical monitoring device (optical monitor), it has erecting bed 36 and optical pickocff 37, wherein this erecting bed 36 is configured to install the wafer W that is sent among the IMS 32, and this optical pickocff 37 is configured to point to the wafer W that is installed on the platform 36.The one IMS 32 measures the surface configuration of wafer W, for example CD (critical dimension) value of the film thickness of its superficial layer and the distribution trough that forms thereon, gate electrode or the like.Similar with an IMS32, the 2nd IMS 33 is optical monitoring devices and has erecting bed 38 and optical pickocff 39.The 2nd IMS measures for example lip-deep a large amount of particles of wafer W.
Base plate processing system 10 is provided with the operation panel 40 on the end longitudinally that is positioned at loading module 18.Operation panel 40 has the display unit of the operating state of the parts that are used for display base plate treatment system 10, and this display unit is made of for example LCD (LCD).
For being used to shown in the installation diagram 7 on base plate processing system 10 removed the bpsg film 75 of wafer W and the device of deposited film 76, must in dry environment, remove film 75,76.Bpsg film 75 is silica-based oxide-films, and deposited film 76 is the plan SiO that made by SiOBr 2Film, heat oxide film 72 is SiO 2Film.Therefore, when removing bpsg film 75 and deposited film 76, may remove heat oxide film 72.If removed heat oxide film 72, then corresponding with film 72 hole or trench portions can cave in to form indenture therein.Therefore, bpsg film 75 and deposited film 76 must removed down with the high selectivity ratio (high selectivity ratio) of heat oxide film 72.
In order to find the method that can remove bpsg film 75 and deposited film 76 in the mode that meets above-mentioned necessary condition, the inventor has carried out various experiments.As a result, it is found that, can remove bpsg film 75 and deposited film 76, and by there not being H substantially 2Only do not supply H in the environment of O to wafer W supply HF gas 2O gas can be increased to 1000 with the optional ratio of gas film 75,76 and film 72.
The inventor has further carried out big quantity research and has obtained following tentative theory the mechanism of above-mentioned removal method.
As HF gas and H 2O in conjunction with the time, form to corrode and remove the fluorinated, acid of oxide-film.In order there not to be H substantially 2Form fluorinated, acid by HF gas in the environment of O, HF gas must with contained water (H in the oxide-film 2O) molecule combination.
Bpsg film 75 forms by the vapour deposition of handling such as CVD etc., and deposited film 76 forms by the reaction between plasma and the silicon.Therefore, sparse and so the possibility attached water molecule of the membrane structure of these films 75,76.Therefore, bpsg film 75 and deposited film 76 contain some hydrones.When HF gas arrived film 75,76, HF gas and water molecules were with the fluorinated, acid of formation degraded films 75,76.Therefore, can not use chemical solution and plasma and remove bpsg film 75 and deposited film with 76.
On the other hand, by being that thermal oxidation forms heat oxide film 72 in the environment of 800 to 900 degrees centigrade of scopes in temperature.Therefore, in the film manufacture process in heat oxide film 72 moisture-free.In addition, the membrane structure densification of heat oxide film 72, so hydrone is not easy attached on the film 72.Therefore, heat oxide film 72 basic moisture-free.Because hydrone does not exist, even the HF gas of being supplied arrives film 72, HF gas can not form fluorinated, acid and therefore can not corrode heat oxide film 72.
Correspondingly, bpsg film 75 and deposited film 76 can improve (for example up to 1000) with the optional ratio of heat oxide film 72, therefore, and can be by there not being H substantially 2Only do not supply H in the environment of O to wafer supply HF gas 2O gas, thereby these films 75,76 of selective etch.
When using fluorinated, acid to remove bpsg film 75 and deposited film 76, at the SiO of film 75,76 2And the chemical reaction shown in the following chemical formula of generation between the fluorinated, acid (HF),
SiO 2+4HF→SiF 4+2H 2O↑
SiF 4+2HF→H 2SiF 6
Thus, produce residuals (H 2SiF 6).Residuals may cause the deficiencies in electrical conductivity of gained semiconductor device and therefore must remove.
In this execution mode, use heat energy to remove residuals.More specifically, heating has wherein produced the wafer W of residuals, and thermal decomposition residuals thus is shown below.
H 2SiF 6+ Q (heat energy) → 2HF ↑+SiF 4↑
That is to say, in this embodiment, by adding heat abstraction by SiO 2And the residuals that the reaction between the fluorinated, acid generates.
Then, the substrate processing method using same to this execution mode describes.
Fig. 3 A to 3D is the procedure chart that the substrate processing method using same of implementing by the base plate processing system shown in Fig. 1 is shown.
At first, form heat oxide film 72 on monocrystalline silicon substrate base material 71, film 73,74, and bpsg film 75 prepare wafer W thus stackedly, and wherein part monocrystalline silicon substrate base material 71 comes out by film 72 to 75.Then, wafer W is sent to plasma process modules 12 to 15 in any.In the plasma process modules that wafer W is sent to wherein, use the plasma that generates by HBr gas in the monocrystalline silicon substrate base material 71 of wafer W, to form hole or groove (plasma etch step).At this moment, in the hole of wafer W or groove, form deposited film 76 (Fig. 3 A).
Then, the wafer W shown in Fig. 3 A is shifted out from the chamber of plasma process modules, and be sent to via delivery module 11 in the chamber 22 of inventiona gas treatment module 16.Then, wafer W is arranged on the platform 23.Use APC valve 25b and analog that the pressure in the chamber 22 is set to 1.3 * 10 1To 1.1 * 10 3Pa (1 to 8Torrs), and use the heater in this chamber sidewall that the ambient temperature in the chamber 22 is set in 40 to 60 degrees centigrade of scopes.Then, supply HF gas (HF gas supply step) (Fig. 3 B) from the gas supply unit 26 of spray head 24 to wafer W with the flow velocity in 40 to the 60SCCM scopes.At this moment, hydrone is almost completely discharged from chamber 22 inside, and not to chamber 22 supply H 2O gas.
Contained water molecules in the HF gas of arrival bpsg film 75 and deposited film 76 and the film 75,76 produces fluorinated, acid thus.Fluorinated, acid corrodes bpsg film 75 and deposited film 76.As a result, film 75,76 is by the selectivity etching.On the other hand, because the SiO in fluorinated, acid and bpsg film 75 and the deposited film 76 2Between chemical reaction, produce residuals 41.In hole or groove, residuals 41 is deposited on film 73,74, on heat oxide film 72 and the monocrystalline silicon substrate base material 71 (Fig. 3 C).
Then, the wafer W that has deposited residuals 41 on it is shifted out from the chamber 22 of inventiona gas treatment module 16, be sent in the chamber of heat treated module 17 via delivery module 11 then.The wafer W that heat treated module 17 will be sent to wherein is heated to predetermined temperature, particularly, and to 150 degrees centigrade or higher (substrate heating steps).Heat treated module 17 is introduced N in its chamber 2Gas.The N that introduces 2Gas forms air-flow in this chamber.At this moment, form the H of residuals 41 2SiF 6Decomposes becomes HF and SiF 4Gained HF and SiF 4Caught and remove by air-flow (Fig. 3 D).
Then, wafer W is shifted out from the chamber 22 of heat treated module 17, finish this processing this moment.
According to the substrate processing method using same of this execution mode, the monocrystalline silicon substrate base material 71 of the wafer W that partly comes out by heat oxide film 72, film 73,74 and bpsg film 75 is supplied HF gas by the plasma etching of HBr gas to wafer W, and heated chip W.When monocrystalline silicon substrate base material 71 during, form deposited film 76 by the plasma etching of HBr gas.Fluorinated, acid selective etch deposited film 76 and bpsg film 75 by HF gas generates on the other hand, generate residuals 41 (H 2SiF 6).By heating, residuals 41 is broken down into HF and SiF 4Thus, can in dry environment, remove deposited film 76 and bpsg film 75.Therefore inventiona gas treatment module 16 and heat treated module 17 can be arranged in the base plate processing system 10.Therefore, in etching behind the monocrystalline silicon substrate base material 71 of wafer W, can wafer W be sent in inventiona gas treatment module 16 or the heat treated module 17 via delivery module 11.Therefore, wafer W need not be exposed to deposited film 76 and the bpsg film 75 that just can remove wafer W in the atmospheric air, can simplify the processing substrate process thus and eliminate the needs that the exposure time limit of wafer W is controlled.Therefore, can prevent that the productivity ratio of being made semiconductor device by wafer W from reducing.
By the aforesaid substrate processing method, inventiona gas treatment module 16 and heat treated module 17 can be arranged in the base plate processing system 10.Therefore, will inventiona gas treatment module 16 and heat treated module 17 be arranged on diverse location, can reduce system's erection space (area coverage (footprint)) like this.
In addition, by the aforesaid substrate processing method, at N 2Heated chip W in the gaseous environment.N 2Gas forms the air-flow of the residuals 41 of catching and transmit decomposes, guarantees to remove deposited film 76 and bpsg film 75 thus.
In addition, use the aforesaid substrate processing method, on it, have the wafer W supply HF gas of bpsg film 75 and deposited film 76.Water molecules contained in HF gas and bpsg film 75 and the deposited film 76 is to form the fluorinated, acid of erosion and selective etch film 75,76.Therefore,, prevent to remove heat oxide film 72, can prevent to form indenture thus removing film at 75,76 o'clock.
In aforesaid substrate treatment system 10, inventiona gas treatment module 16 and heat treated module 17 provide as independent device.Alternatively, as shown in Figure 4, can provide the platform heater 43 with platform 23 that is combined with inventiona gas treatment module, wherein platform heater 43 can heat the wafer W that places on the platform 23.In this case, by using gases processing module 42, just optionally etching bpsg film 75 and deposited film 76, but and thermal decomposition residuals 41.Thus, the function of inventiona gas treatment module and heat treatment module can be realized by the mode of a processing module, can reduce the size of base plate processing system 10 thus.
Then, will base plate processing system second embodiment of the invention be described.
This execution mode is basic identical with first execution mode on structure and function, and difference only is that this execution mode does not adopt the thermal decomposition to residuals.Structure and function that this execution mode is different with first execution mode hereinafter will be described, omit explanation about identical or like configurations.
As noted before, when using fluorinated, acid to remove bpsg film 75 and deposited film 76, between fluorinated, acid and bpsg film 75 or deposited film 76 chemical reaction takes place, to produce residuals 41 (H 2SiF 6).In this embodiment, use NH 3Remove residuals 41.More specifically, provide NH to residuals 3Gas is to produce the chemical reaction shown in the following formula.
H 2SiF 6+2NH 3→2NH 4F+SiF 4↑
Thus, generate NH 4F (ammonium fluoride) and SiF 4NH 4F is the product of chemical reaction, and it can distil.By setting ambient temperature a little more than room temperature, can be with NH 4Therefore the F distillation also removes like a cork.
Therefore, in this embodiment, by causing H 2SiF 6With NH 3Between chemical reaction and NH 4The distillation of F is removed by SiO 2The residuals H that generates with the chemical reaction of fluorinated, acid 2SiF 6
The base plate processing system of this execution mode is identical with the structure of the base plate processing system 10 shown in Fig. 1.Replace inventiona gas treatment module 16 and heat treated module 17, inventiona gas treatment module 44 (HF gas supply device and purgative gas feeding mechanism) is provided, it is used for selective etch bpsg film 75 and deposited film 76, is used to cause residuals 41 and NH 3Between chemical reaction, and be used for initiating chamical reaction product (NH 4F) distillation.Via vacuum gate valve 44a inventiona gas treatment module 44 is connected with delivery module 11.
Fig. 5 shows the cutaway view according to the inventiona gas treatment module 44 of the base plate processing system of this execution mode.
In Fig. 5, inventiona gas treatment module 44 comprises chamber 22, platform 23, spray head 45, TMP25a and APC valve 25b.
Spray head 45 is made of gas supply department under the dish type 46 and the last gas supply department 47 that is superimposed upon down in the gas supply department 46.Lower and upper gas supply department 46,47 has first and second buffer chamber 48,49 respectively.This first and second buffer chamber 48,49 is separately via air vent hole 50,51 and chamber 22 internal communication.
First buffer chamber 48 and the NH 3(ammonia) gas supply system (not shown) links to each other, and it can contain NH to 48 supplies of first buffer chamber 3Gas (purgative gas).The purgative gas of being supplied is fed to the inside of chamber 22 via air vent hole 50.Second buffer chamber 49 is connected with the HF gas supply system, and this HF gas supply system can be to second buffer chamber, 49 supply HF gases.Then, via air vent hole 51 the HF gas of being supplied is provided to the inside of chamber 22.
Similar with the air vent hole 28 shown in Fig. 2 B, each air vent hole 50,51 forms has a part of leading to chamber 22 and widening towards the one end, and thus, purgative gas and HF gas can effectively diffuse in the chamber 22.In addition, have a contraction on air vent hole 50,51 each comfortable its cross section, can prevent that thus the residuals or the analog that generate from flowing back to air vent hole 50,51 and then entering first and second buffer chamber 48,49 in chamber 22.
In inventiona gas treatment module 44, the heater (not shown) is installed in the sidewall of chamber 22, for example, heating element.Thus, the ambient temperatures in the chamber 22 can be set at and be higher than room temperature, thereby promote hereinafter described NH 4The distillation of F.
Then, will the substrate processing method using same according to this execution mode be described.
Fig. 6 A to 6E shows the artwork of the substrate processing method using same of implementing by the base plate processing system of this execution mode.
Similar with the situation shown in Fig. 3 A, at first wafer W is sent in any of plasma process modules 12 to 15.In the plasma process modules that has wafer W, use the plasma that generates by HBr gas in the monocrystalline silicon substrate base material 71 of wafer W, to form hole or groove (plasma etch step).At this moment, in the hole of wafer W or groove, form deposited film 76 (Fig. 6 A).
Then, the wafer W shown in Fig. 6 A is shifted out from plasma process modules, be sent in the chamber 22 of inventiona gas treatment module 44 via delivery module 11 subsequently.Wafer W is arranged on the platform 23.According to the similar mode of situation shown in Fig. 3 B, to the ambient temperature in the pressure in the chamber 22, the chamber 22, and be provided with from the flow velocity of last gas supply department 47 supply HF gases.Identical with the situation shown in Fig. 3 B, hydrone is almost completely discharged in chamber 22, and not to chamber 22 supply H 2O gas.
Identical with the situation shown in Fig. 3 C, by contained SiO in fluorinated, acid and bpsg film 75 and the deposited film 76 2Between chemical reaction, produce residuals 41, and in hole or groove, be deposited on film 73,74, on heat oxide film 72 and the monocrystalline silicon substrate base material 71 (Fig. 6 C).
Then, stop to chamber 22 supply HF gases.After this, from the following gas supply department 46 of spray head 45 to wafer W supply purgative gas (purgative gas supply step) (Fig. 6 D).At this moment, contained NH in the purgative gas 3Gas and the H that constitutes residuals 41 2SiF 6Reaction produces NH 4F and SiF 4Use the heating element in chamber sidewall then, the ambient temperature in the chamber 22 is set to a little more than room temperature, make NH thus 4F distil (Fig. 6 E).
Then, wafer W is shifted out from the chamber 22 of inventiona gas treatment module 44, and stop this processing.
According to the substrate processing method using same of this execution mode, the part monocrystalline silicon substrate base material 71 of wafer W is by heat oxide film 72, film 73,74, and bpsg film 75 comes out, and, supply HF gas, and contain NH to the wafer W supply to wafer W by the plasma etching of HBr gas 3The purgative gas of gas.When monocrystalline silicon substrate base material 71 during, form deposited film 76 by the plasma etching of HBr gas.The fluorinated, acid that is generated by HF gas is etching deposit film 76 and bpsg film 75 optionally, and produces residuals 41.NH 3Gas and residuals 41 reactions are to produce the chemical reaction product (NH of easy distillation 4F).When the ambient temperature in the chamber 22 was set to a little more than room temperature, this product distilled easily.In other words, can in dry environment, remove deposited film 76 and bpsg film 75.Therefore inventiona gas treatment module 44 can be installed in the base plate processing system 10.Therefore, in etching behind the monocrystalline silicon substrate base material 71 of wafer, can wafer W be sent in the inventiona gas treatment module 44 via delivery module 11.Therefore, in etching behind the monocrystalline silicon substrate base material 71, wafer W need not be exposed to and just can remove deposited film 76 and bpsg film 75 in the atmospheric air.Therefore can simplify the processing substrate process and eliminate the needs that the exposure time limit of wafer W is controlled, can prevent that thus the productivity ratio of being made semiconductor device by wafer W from reducing.
Because the aforesaid substrate processing method allows inventiona gas treatment module 44 is installed in the base plate processing system, and will inventiona gas treatment module 44 not be installed in the position different with this system, can reduce the area coverage of whole system thus.
Because aforesaid substrate processing method only using gases processing module 44 just can realize the removal of the selective etch and the residuals 41 of bpsg film 75 and deposited film 76, so can reduce the size of base plate processing system 10.
Should be noted that the selective etch of bpsg film 75 and deposited film 76, by residuals 41 reaction of formation products, and the distillation of product can be used different processing modules implement.
In the above-described embodiment, use bpsg film 75 as hard mask.But, be not limited thereto as the oxide-film of hard mask, and can be higher than the heat oxide film 72 at least film of impurity content.Particularly, can provide TEOS (tetraethyl orthosilicate) film or BSG (Pyrex) film.The residuals of removing is not limited to H 2SiF 6The present invention can be used for removing any residuals that generates when using fluorinated, acid to remove oxide-film.
Should be understood that by providing storage medium, stored the program code of the software of the function that realizes above-mentioned execution mode on it, then make this computer read and carry out institute's stored program code in this storage medium, also can realize the present invention to computer.
In this case, the program code that reads from storage medium itself has been realized the function of above-mentioned execution mode, so this program code constitutes the present invention with the storage medium of having stored this program code.
Be used to provide the storage medium of program code to be, for example, floppy (registered trade mark) dish, hard disk, magnetooptical disc, CD, for example CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW or DVD+RW, tape, non-volatile memory card or ROM.Alternatively, this program can be downloaded from being connected to unshowned another computer on the Internet, commercial network, the local area network (LAN) etc., database etc. via network.
In addition, should be understood that, the function of these execution modes not only can realize by the program code that object computer reads, can also by make the OS (operating system) that works on computers etc. based on the indication operating part of this program code or all practical operation realize.
In addition, should be appreciated that, the function of these execution modes also can followingly realize: the program code that will from storage medium, read write be arranged on the expansion board that inserts in the computer or with expanding device that computer is connected in memory in, make CPU then or be arranged in expansion board or the analog of expanding device based on indication operating part or whole practical operation of this program code.
The form of program code can be an object code, the program code of being carried out by interpretive program, the script data (script data) that provides to OS etc.

Claims (6)

1. one kind is used for handling and has the monocrystalline silicon substrate base material, first oxide-film by thermal oxidation formation, and the substrate processing method using same of the substrate of the second impure oxide-film, a part of monocrystalline silicon substrate base material comes out by described first and second oxide-films, and this method comprises:
Using halogen is the plasma etch step of monocrystalline silicon substrate base material of the described exposure of plasma etching of gas;
HF gas supply step to described supply substrate HF gas; And
The substrate heating steps that the described substrate of having supplied HF gas is heated,
Wherein in described plasma etch step, in described HF gas supply step and the described substrate heating steps process, described substrate is not exposed in the surrounding air.
2. according to the substrate processing method using same of claim 1, wherein in described substrate heating steps at N 2The described substrate of heating in the gaseous environment.
3. one kind is used for handling and has the monocrystalline silicon substrate base material, first oxide-film by thermal oxidation formation, and the substrate processing method using same of the substrate of the second impure oxide-film, a part of monocrystalline silicon substrate base material comes out by described first and second oxide-films, and this method comprises:
Using halogen is the plasma etch step of monocrystalline silicon substrate base material of the described exposure of plasma etching of gas;
HF gas supply step to described supply substrate HF gas; And
At least contain NH to the described supply substrate of having supplied HF gas 3The purgative gas supply step of the purgative gas of gas,
Wherein in described plasma etch step, in described HF gas supply step and the described purgative gas supply step, described substrate is not exposed in the surrounding air.
4. one kind is used for handling and has the monocrystalline silicon substrate base material, first oxide-film by thermal oxidation formation, and the base plate processing system of the substrate of the second impure oxide-film, a part of monocrystalline silicon substrate base material comes out by described first and second oxide-films, and this system comprises:
Plasma etching apparatus, it is configured to use halogen is the monocrystalline silicon substrate base material of the described exposure of plasma etching of gas;
The HF gas supply device, it is configured to described supply substrate HF gas;
Substrate heating equipment, it is configured to the described substrate of having supplied HF gas is heated; With
Base plate transfer device, it is set at described plasma etching apparatus, and between described HF gas supply device and the described substrate heating equipment, described base plate transfer device is configured to transmit described substrate so that described substrate is not exposed to surrounding air.
5. according to the base plate processing system of claim 4, each free identical device of wherein said HF gas supply device and described substrate heating equipment constitutes.
6. one kind is used for handling and has the monocrystalline silicon substrate base material, first oxide-film by thermal oxidation formation, and the base plate processing system of the substrate of the second impure oxide-film, a part of monocrystalline silicon substrate base material comes out by described first and second oxide-films, and this system comprises:
Plasma etching apparatus, it is configured to use halogen is the monocrystalline silicon substrate base material of the described exposure of plasma etching of gas;
The HF gas supply device, it is configured to described supply substrate HF gas;
The purgative gas feeding mechanism, it is configured to contain NH at least to the described supply substrate of having supplied HF gas 3The purgative gas of gas;
Base plate transfer device, it is set at described plasma etching apparatus, and between described HF gas supply device and the described purgative gas feeding mechanism, described base plate transfer device is configured to transmit described substrate so that described substrate is not exposed to surrounding air.
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