CN100543949C - Method of manufacturing thin film transistor - Google Patents
Method of manufacturing thin film transistor Download PDFInfo
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- CN100543949C CN100543949C CNB2004100776288A CN200410077628A CN100543949C CN 100543949 C CN100543949 C CN 100543949C CN B2004100776288 A CNB2004100776288 A CN B2004100776288A CN 200410077628 A CN200410077628 A CN 200410077628A CN 100543949 C CN100543949 C CN 100543949C
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Abstract
The invention provides and a kind ofly can effectively simplify the thin-film transistor manufacturing process, save the process equipment cost, improve the method for fabricating thin film transistor of producing yield, it comprises the steps: to provide a substrate, after this substrate cleaned, utilize repairing technique plated film on substrate of laser chemical vapor deposition to carry out the circuit deposition.
Description
[technical field]
The invention relates to a kind of method of manufacturing thin film transistor.
[background technology]
TFT (Thin Film Transister, thin-film transistor) is the infrastructure component of LCD.Existing thin-film transistor technologies is to form the essential various films of circuit by sputter, chemical deposition on non-single-chip such as glass or plastic base or single-chip, by the processing and fabricating integrated circuit to film.Thin-film transistor generally adopts amorphous silicon or polysilicon to make, with the amorphous silicon manufacturing process is example, generally comprise: active layer is made, grid is made, three steps are made in source/drain electrode, its order can change according to structure is different, and each operation all comprises deposition (Deposit), develop (Develop) and etching (Etch).
As shown in Figure 1, be the circuit production flow chart of prior art thin-film transistor, it comprises the steps: to provide a substrate; This substrate is cleaned back plating one metal film on substrate; The coating photoresistance exposes (Exposure) to it then and develops on this metal film; With the substrate etching after developing; The utilization blocking solution of delustering is removed exposure back residual photoresistor.
But, prior art thin-film transistor manufacturing process is too loaded down with trivial details, active layer is made, grid is made, source/drain electrode is made in three steps and included deposition, development and etching work procedure, and each making step all needs depositing device, developing apparatus and the etching machines of tool corresponding function, so equipment cost is higher.Because substrate conversion times between each worker station is frequent, the probability that produces waste product increases, and makes that the yield of finished product is lower simultaneously.
[summary of the invention]
In order to overcome the existing shortcoming that skill thin-film transistor manufacturing process is loaded down with trivial details, equipment cost is higher and the finished product yield is low, the invention provides and a kind ofly can effectively simplify the thin-film transistor manufacturing process, save the process equipment cost, improve the method for fabricating thin film transistor of producing yield.
The technical scheme that technical solution problem of the present invention is adopted is: a kind of thin-film transistor manufacture method is provided, comprise following several steps, one substrate at first is provided, after this substrate cleaned, (Chemical Vapor Deposition, CVD) technology plated film on substrate carries out the circuit deposition to utilize laser chemical vapor deposition.
The invention has the beneficial effects as follows: compared with prior art, method for fabricating thin film transistor of the present invention is to utilize the repairing method of laser CVD directly to carry out the circuit deposition on substrate, form grid and source/drain electrode, thereby steps such as the thin film deposition that forms in grid and the source/drain electrode process, exposure, etching have been saved in the conventional thin film transistor manufacturing process, reduce process equipment, made equipment cost reduce.Because of the thin-film transistor simplified manufacturing process, avoided in the prior art each worker issuable problem of standing, improved the product yield.
[description of drawings]
Fig. 1 is the circuit production schematic diagram of prior art thin-film transistor.
Fig. 2 is the flow chart of thin-film transistor manufacturing process of the present invention.
Fig. 3 to Fig. 7 is the schematic diagram of circuit deposition in the thin-film transistor manufacturing process of the present invention.
[embodiment]
Seeing also Fig. 2, is the flow chart of thin-film transistor manufacturing process of the present invention.The method of manufacturing thin film transistor that the present invention discloses is that a substrate is provided earlier; Substrate is cleaned; Utilize laser CVD on substrate, to carry out plated film and form required circuit.
This substrate is a bare board, and this cleaning step is to adopt substrate cleaning apparatus to utilize cleaning fluid to clean.
This circuit deposition step is to utilize the laser CVD repairing method and utilize computer program control to finish, and therefore can satisfy the circuit deposition of large-area substrates.This laser CVD repairing technique principle be utilize the laser energy density height, the characteristics such as rapid that heat up when the material effects, induce the gas source reaction that contains the membranae praeformativa element, and then decomposite the membranae praeformativa element, and be deposited on the substrate.Therefore laser directly is projeced on the substrate, substrate is carried out localized heating or removes original thin layer that is unfavorable for film forming on the substrate, can realize the substrate partial film forming, can not deposit film because of not reaching reaction temperature by the zone of laser radiation.
Seeing also Fig. 3 to Fig. 7, is to utilize laser CVD equipment to carry out the schematic diagram of circuit deposition in the thin-film transistor manufacturing process of the present invention.This circuit deposition comprises the steps:
As shown in Figure 3, the grid 2 that deposition one is made of metal wire on substrate 1;
As shown in Figure 4, on the substrate 1 that deposits grid 2, form a gate oxide level 3;
Deposition one metal wire is as data wire 4 on this gate oxide level 3, and the arragement direction of this data wire 4 is vertical with the arragement direction of grid 2;
As shown in Figure 5, deposition source electrode 5, this source electrode 5 is to be made of two parallel metal lines, this two metal wire is positioned at the top of grid 2, and is communicated with data wire 4;
As Figure 6 and Figure 7, deposition drain electrode 6, this drain electrode 6 are arranged between the source electrode 5 and with two metal wires of data wire 4 with source electrode 5 and keep at a certain distance away.
This circuit deposition also can be carried out according to following steps:
The grid 2 that deposition one is made of metal wire on substrate 1;
On the substrate 1 that deposits grid 2, form a gate oxide level 3;
Deposit a metal wire as data wire 4, the arragement direction of this data wire 4 is vertical with the arragement direction of grid 2, and is connected with two metal wires, one end of source electrode 5;
Width, thickness and the arrangement mode of this circuit deposition each electric circuit metal line that forms all are to do different designs according to actual needs.Because of the action of this deposition is predetermined computation machine program control by laser CVD equipment, therefore can be by order to different this circuit deposition of routine change of laser CVD equipment input, or change arranging of electric circuit metal line.
Compared with prior art, method for fabricating thin film transistor of the present invention is to utilize laser The repairing method of CVD carries out electric circuit deposition at substrate, directly forms grid and source/drain electrode Thereby the steps such as thin film deposition in the conventional thin film transistor manufacturing process, development, etching have been saved Suddenly, reduced process equipment, so that equipment cost reduces. The letter of thin film transistor (TFT) manufacturing process Change, avoided that the worker stands too much in the prior art, solved the lower problem of product yield, carry High product yield.
Claims (5)
1. a method of manufacturing thin film transistor comprises the steps: to provide a substrate; This substrate is cleaned; Utilize the laser chemical vapor deposition repairing technique to carry out the circuit deposition on substrate, this circuit deposition step comprises the grid that deposition one is made of metal wire on substrate earlier; Deposit at this then and form a gate oxide level on the substrate of grid; Deposition one metal wire is as data wire on this gate oxide level, and the arragement direction of this data wire is vertical with the arragement direction of grid; Deposit source electrode again, this source electrode is to be made of two parallel metal lines, and this two metal wire is positioned at the top of grid, and the one end is communicated with data wire; Deposition drain electrode at last, this drain electrode are located between the grid and are kept at a certain distance away with two metal wires of data wire and source electrode.
2. method of manufacturing thin film transistor as claimed in claim 1 is characterized in that: the step of circuit deposition is to utilize laser chemical vapor deposition equipment to carry out.
3. method of manufacturing thin film transistor as claimed in claim 2 is characterized in that: the step of utilizing this laser chemical vapor deposition equipment to carry out the circuit deposition on substrate is to finish by computer program control.
4. method of manufacturing thin film transistor as claimed in claim 1 is characterized in that: this substrate is a bare board.
5. method of manufacturing thin film transistor as claimed in claim 1 is characterized in that: the cleaning of this substrate is to adopt substrate cleaning apparatus to utilize cleaning fluid to clean.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100776288A CN100543949C (en) | 2004-12-17 | 2004-12-17 | Method of manufacturing thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100776288A CN100543949C (en) | 2004-12-17 | 2004-12-17 | Method of manufacturing thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1790637A CN1790637A (en) | 2006-06-21 |
| CN100543949C true CN100543949C (en) | 2009-09-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100776288A Expired - Fee Related CN100543949C (en) | 2004-12-17 | 2004-12-17 | Method of manufacturing thin film transistor |
Country Status (1)
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| CN (1) | CN100543949C (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5691209A (en) * | 1995-09-14 | 1997-11-25 | Liberkowski; Janusz B. | Lattice interconnect method and apparatus for manufacturing multi-chip modules |
| JP3138951B2 (en) * | 1993-03-04 | 2001-02-26 | 株式会社ダイフク | Garbage storage |
| CN1519060A (en) * | 2003-01-21 | 2004-08-11 | 友达光电股份有限公司 | Method for rinsing surface of silicon and technique for manufacturing thin film transistory by using the rinsing method |
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2004
- 2004-12-17 CN CNB2004100776288A patent/CN100543949C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3138951B2 (en) * | 1993-03-04 | 2001-02-26 | 株式会社ダイフク | Garbage storage |
| US5691209A (en) * | 1995-09-14 | 1997-11-25 | Liberkowski; Janusz B. | Lattice interconnect method and apparatus for manufacturing multi-chip modules |
| CN1519060A (en) * | 2003-01-21 | 2004-08-11 | 友达光电股份有限公司 | Method for rinsing surface of silicon and technique for manufacturing thin film transistory by using the rinsing method |
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| Publication number | Publication date |
|---|---|
| CN1790637A (en) | 2006-06-21 |
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