CN100541857C - Planar light-emitting element and manufacture method thereof - Google Patents
Planar light-emitting element and manufacture method thereof Download PDFInfo
- Publication number
- CN100541857C CN100541857C CNB2003101006187A CN200310100618A CN100541857C CN 100541857 C CN100541857 C CN 100541857C CN B2003101006187 A CNB2003101006187 A CN B2003101006187A CN 200310100618 A CN200310100618 A CN 200310100618A CN 100541857 C CN100541857 C CN 100541857C
- Authority
- CN
- China
- Prior art keywords
- emitting element
- planar light
- layer
- semi
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
A kind of planar light-emitting element and manufacture method thereof, this element are to comprise a transparency carrier; One dielectric materials layer is configured on the transparency carrier; One semi-transparent metal layer is configured on the dielectric materials layer, and wherein dielectric materials layer and semi-transparent metal layer are to constitute half lens arrangement; One transparent anode is configured on the semi-transparent metal layer; One luminescent layer is configured on the transparent anode; And a metallic cathode, be configured on the luminescent layer.
Description
Technical field
The invention relates to a kind of planar light-emitting element (Flat Panel Lighting Device) and manufacture method thereof, and particularly relevant for a kind of planar light-emitting element and manufacture method thereof with metal micro-cavity structure.
Background technology
But in the various materials of all self-lightings, the organic electric-excitation luminescent material is for developing one of material that has potentiality in recent years.And organic electroluminescent element is to be a kind of planar light-emitting element wherein, not only it has advantages such as simple process structure and low driving voltage, the more important thing is that it is except using the glass substrate, also can be used in plastic cement (Rigid Plastic) substrate and bendable musical form (Flexible) substrate, so organic electroluminescent element can be applied on the photovoltaic widely.
And for all light-emitting components that are applied in illumination, except the requirement of high brightness and high electro-optical efficiency, develop towards the direction of energy-conservation, power saving and environmental protection especially in recent years.Organic electroluminescent element can meet on the one hand energy-conservation, power saving, the environmental protection requirement of light-emitting component, also can reach the requirement of uniformity, complanation and the large tracts of landization of illumination on the other hand, therefore for following planar light-emitting element, organic electroluminescent element will be best selection.
Yet, for traditional organic electroluminescent element, how with outside the effective export element of the light that inside produced, be at present meet with most important and need most one of problem of breakthrough.Because in the organic electroluminescent element structure, the refractive index of the material of anode and luminescent layer is all greater than substrate, therefore when angle of incidence of light during, will between anode and luminescent layer, form total reflection, and cause anode/luminescent layer that the generation of waveguide (Wave Guide) phenomenon is arranged greater than critical angle.Meaning promptly will be confined to reflect between anode and the luminescent layer greater than the light of critical angle, and can't go into to inject substrate.According to identical principle,, therefore, will form total reflection at substrate, and cause the waveguide phenomenon of substrate when angle of incidence of light during greater than critical angle because the refractive index of substrate is the refractive index greater than air.
In order to promote the organic electroluminescent element external quantum efficiency, several methods is suggested.
Wherein, in (G.Gu etc, Opt.Lett.22 (1997) are p.396) disclosed method, it is to plate the layer of metal reflector in the side of positive wire and all the other zones, so that the external quantum efficiency of organic electroluminescent element promotes one to two times.Yet this kind method must increase metal coating and metal lithography process, therefore can significantly increase the manufacturing cost of element.
In addition, in (H.Yokogawa etc, SID ' 01 (2001) are p.405) disclosed method, be to be used in to form one deck aeroge thick film between anode and the transparency carrier, so that the external quantum efficiency of organic electroluminescent element promotes about about one times.Yet because that aeroge is obtained is difficult, and the coating manufacture method is very complicated, so this kind method is not suitable for the volume production of element.
Moreover, in that (IEDM ' 94 (1994) p.571, J.Appl.Phys.80 (1996) p.207, J.Appl.Phys.85 (1996) p.3032, J.Appl.Phys.8 (1999) is p.2407) etc. in many documents, it is to use the principle of multilayer dielectric matter plated film to lower incident light and catoptrical interference and to increase penetrance of microcavity (Micro-cavity) principle, so as to promoting the external quantum efficiency of element.But because multilayer dielectric layer is easy to generate the problem of slight crack (Crack) or pin hole (Pin-Hole) because of technological factor, so moisture and gas infiltrates via slight crack or pin hole path easily and diffuses in the element, and causes element shortening in useful life.
In addition, people such as Lu (IDEM ' 00 (2000), p.607) and people's (Appl.Phys.Lett.76 (2000) p.1650) such as Madigan be to use the substrate of high index, and on light-emitting area, attach convex lens to increase the method for external quantum efficiency, so that external quantum efficiency increases.Yet this kind method can't provide element permanent use, and the lens diameter that is attached is too big and thickness is too thick, therefore against the trend of electronic component microminiaturization.
In U.S. Pat 5936347 and US6080030, be the geometry that on glass substrate, directly produces semi-convex lens or half concavees lens with hot pressing mode, so as to increasing the external quantum efficiency of element.Yet, because the hot pressing of glass temperature height not only, and cause the local warpage of glass easily, and (heating up and cooling) consuming time, be not to be suitable for the element volume production therefore.
In addition, people such as Moller (J.Appl.Phys.91 (2002) p.3324) proposes, and (Micro-lens Arrays) is made on the glass substrate with microlens array, can make its external quantum efficiency increase by 0.5 times.Yet, making microlens structure with this kind method is not real lenticule, not only and it is too consuming time on technology, and lenticular size will the restriction to some extent with technology mode, and, therefore will certainly increase the thickness of element along with the increase of lens sizes also will influence component structure.
In addition, what is particularly worth mentioning is that, for the organic electroluminescent element that uses plastic substrate or bendable musical form substrate,, and influence useful life of element because moisture is very easy to infiltrate and diffuse in the element with gas.Therefore, how to prevent effectively that the life-span that moisture and gas infiltrate in the planar light-emitting element diffuse to plastic transparent substrate or bendable musical form transparency carrier to improve element from also being one of important problem.
Summary of the invention
Purpose of the present invention is exactly in that a kind of planar light-emitting element and manufacture method thereof are provided, with the external quantum efficiency of effective raising element.
Another object of the present invention provides a kind of planar light-emitting element and manufacture method thereof, with solve have in the known method of improving the element-external quantum efficiency can't volume production, cost significantly improves and the problem of limiting element downsizing.
A further object of the present invention provides a kind of planar light-emitting element and manufacture method thereof, diffuses in the planar light-emitting element that uses plastic substrate or bendable musical form substrate to avoid moisture and gas to infiltrate, and then improves the useful life of element.
The present invention proposes a kind of planar light-emitting element, comprises a transparency carrier, a dielectric materials layer, a semi-transparent metal layer, a transparent anode, a luminescent layer and a metallic cathode.Wherein, dielectric materials layer is to be configured on the transparency carrier, and semi-transparent metal layer is to be configured on the dielectric materials layer, and dielectric materials layer and semi-transparent metal layer are to constitute half lens arrangement.In addition, transparent anode is to be configured on the semi-transparent metal layer, and luminescent layer is to be configured on the transparent anode, and wherein the material of luminescent layer can be an organic light emission material or an inorganic light-emitting material.Metallic cathode then is configured on the luminescent layer.In planar light-emitting element of the present invention, metallic cathode and pellicle mirror structure (being made up of dielectric materials layer and semi-transparent metal layer) are to constitute a metal micro-cavity structure, therefore the excitation photon that in luminescent layer, is produced just can in this resonant cavity, form covibration so as to and improve the whole efficiency of the external quantum efficiency and the element of element.Simultaneously, semi-transparent metal layer of the present invention again can be simultaneously as the usefulness of an auxiliary anode, so as to reducing the resistance value of anode.
The present invention proposes a kind of planar light-emitting element, comprises a transparency carrier, a dielectric materials layer, a semi-transparent metal layer, a luminescent layer and a metallic cathode.Wherein, dielectric materials layer is to be configured on the transparency carrier, and semi-transparent metal layer is to be configured on the dielectric materials layer.Wherein, semi-transparent metal layer is the usefulness as an anode, and dielectric materials layer and semi-transparent metal layer constitute half lens arrangement again simultaneously.In addition, luminescent layer is to be configured on the semi-transparent metal layer, and wherein the material of luminescent layer can be an organic light emission material or an inorganic light-emitting material.Metallic cathode then is configured on the luminescent layer.In planar light-emitting element of the present invention, metallic cathode and pellicle mirror structure (being made up of dielectric materials layer and semi-transparent metal layer) are to constitute a metal micro-cavity structure, therefore the excitation photon that is produced in luminescent layer just can form covibration in this resonant cavity, so as to the external quantum efficiency that improves element and the whole efficiency of element.In addition, because semi-transparent metal layer is a usefulness as an anode, the therefore planar light-emitting element of the present invention making that can save anode.
The present invention proposes a kind of manufacture method of planar light-emitting element, and it is that a transparency carrier at first is provided.Then form a dielectric materials layer on transparency carrier, and form a semi-transparent metal layer on dielectric materials layer, wherein dielectric materials layer and semi-transparent metal layer are to constitute half lens arrangement.Afterwards, form a transparent anode on semi-transparent metal layer, form a luminescent layer on transparent anode, wherein the material of luminescent layer can be an organic light emission material or an inorganic light-emitting material.Then, on luminescent layer, form a metallic cathode again, to constitute a planar light-emitting element.And utilize in the formed planar light-emitting element of method of the present invention, metallic cathode and pellicle mirror structure (being made up of dielectric materials layer and semi-transparent metal layer) are to constitute a metal micro-cavity structure, therefore the excitation photon that is produced in luminescent layer just can form covibration in this resonant cavity, so as to the external quantum efficiency that improves element and the whole efficiency of element.In addition, all right while of the formed semi-transparent metal layer of the present invention is as the usefulness of an auxiliary anode, so as to reducing the resistance value of anode.
The present invention proposes a kind of manufacture method of planar light-emitting element, and the method is that a transparency carrier at first is provided.Then form a dielectric materials layer on transparency carrier, and form a semi-transparent metal layer on dielectric materials layer, wherein semi-transparent metal layer is the usefulness as an anode, and dielectric materials layer and semi-transparent metal layer constitute half lens arrangement again simultaneously.Afterwards, form a luminescent layer on semi-transparent metal layer, wherein the material of luminescent layer can be an organic light emission material or an inorganic light-emitting material.Then, on luminescent layer, form a metallic cathode again, to constitute a planar light-emitting element.And utilize in the formed planar light-emitting element of method of the present invention, metallic cathode and pellicle mirror structure (being made up of dielectric materials layer and semi-transparent metal layer) are to constitute a metal micro-cavity structure, therefore the excitation photon that is produced in luminescent layer just can form covibration in this resonant cavity, so as to the external quantum efficiency that improves element and the whole efficiency of element.In addition, because semi-transparent metal layer is the usefulness as an anode, therefore planar light-emitting element of the present invention can save the step of making anode.
Planar light-emitting element of the present invention and manufacture method thereof not only can reduce process complexity, are suitable for batch production technique, but also can reduce the gross thickness of transparency carrier and element, and then reach the requirement of element downsizing.
The present invention is configured in the dielectric materials layer of pellicle mirror structure on plastic transparent substrate or the bendable musical form transparency carrier surface, except can be used to promote the external quantum efficiency of element, can prevent effectively that also moisture and gas permeation from diffusing to element internal, so as to increasing the life-span of element.
Description of drawings
Fig. 1 is the generalized section according to one of the present invention one first embodiment planar light-emitting element;
Fig. 2 is the generalized section according to another planar light-emitting element of first embodiment of the invention;
Fig. 3 is the generalized section according to another planar light-emitting element of first embodiment of the invention;
Fig. 4 is the generalized section according to another planar light-emitting element of first embodiment of the invention;
Fig. 5 is the generalized section according to another planar light-emitting element of first embodiment of the invention;
Fig. 6 is the generalized section according to another planar light-emitting element of first embodiment of the invention;
Fig. 7 is the generalized section according to one of the present invention one second embodiment planar light-emitting element;
Fig. 8 is the generalized section according to another planar light-emitting element of second embodiment of the invention;
Fig. 9 is the generalized section according to another planar light-emitting element of second embodiment of the invention; And
Figure 10 is the generalized section according to another planar light-emitting element of second embodiment of the invention.
Embodiment
For above-mentioned and other purposes of the present invention, characteristic and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
First embodiment
Fig. 1, it illustrates and is the generalized section according to one of the present invention one first embodiment planar light-emitting element.
Please refer to Fig. 1, the manufacturing process of the planar light-emitting element of present embodiment is that a transparency carrier 100 at first is provided, and wherein transparency carrier 100 can be a plastic substrate or a bendable musical form substrate.Afterwards, form a dielectric materials layer 102 on transparency carrier 100, and form a semi-transparent metal layer 104 on dielectric materials layer 102, wherein dielectric materials layer 102 is to constitute half lens arrangement 106 with semi-transparent metal layer 104.
In the present embodiment, the method that forms dielectric materials layer 102 is formed with physical vaporous deposition or chemical vapour deposition technique, and wherein physical vaporous deposition for example is sputtering method, vapour deposition method or ion plating (Ion plating).And the material of dielectric materials layer 102 for example is TiO
2, SiO
2, Ta
2O
5, the nitride of silicon, the nitrogen oxide of silicon, the oxide of silicon, ZnS-SiO
2, (ZnS:50wt%～, SiO
2: 0～50wt%), the nitride of Al and Al alloy and oxide (AlN, Al
2O
3), the nitride (GeN, GeCrN) of nitride, Ge and the Ge alloy of Ti, the oxide (Fe of Fe
2O
3, Fe
3O
4), nitride and oxide (BiNx, the Bi of Bi
2O
3), fluoride and the oxide (CaF of Ca
2, CaO), oxide and sulfide (CdO, the Cd of Cd
2O
3, CdS), oxide and the fluoride (CeO of Ce
2, CeF
3), the oxide (In of the bromide of Cs and iodide (CsBr, CsI), indium arsenide (InAs), indium antimonide (InSb), indium
2O
2), the fluoride and the oxide (LaF of the bromide of potassium and chloride (KBr, KCl), lanthanum
3, La
2O
3), the fluoride (LiF) of lithium, oxide and fluoride (MgO, the MgF of magnesium
2), the oxide and the fluoride (Nd of sodium fluoride (NaF), neodymium
2O
3, NdF, NdF
3), plumbous chloride, fluoride, sulfide and tellurides (PbCl, PbF
2, PbS, PbTe), the oxide (PtO of platinum
2), the oxide and the sulfide (Sb of antimony
2O
3, Sb
2S
3) or carborundum (SiC), and its thickness for example is 100 dust to 5000 dusts.
In addition, the method that forms semi-transparent metal layer 104 is formed with physical vaporous deposition or chemical vapour deposition technique, and wherein physical vaporous deposition for example is sputtering method or ion plating.And the material of semi-transparent metal layer 104 for example is Al, Ag, Au, Cu, Ni, Pd, Pt, AlTi, AgPdCu (APC), AgCuCr (ACC) or AgCuAu (ACA), and its thickness for example is 20 dust to 1000 dusts.
Afterwards, on semi-transparent metal layer 104, form a transparent anode 108, the method that wherein forms transparent anode 108 for example is a sputtering method or an ion plating, and the material of transparent anode 108 for example is indium tin oxide (ITO), indium-zinc oxide (IZO) or aluminium zinc oxide (AZO), and its thickness for example is 200 dust to 5000 dusts.
Continue it, on transparent anode 108, form a luminescent layer 110.Wherein, the method for formation luminescent layer 110 for example is a vapour deposition method, a method of spin coating, an ink-jet method or a print process.And the material of luminescent layer 110 for example is a luminous organic material or a phosphor, and its thickness for example is 500 dust to 3000 dusts.The light that luminescent layer 110 is sent comprises blue light, green glow, ruddiness, white light and other monochromatic light.
Then, on luminescent layer 110, form a metallic cathode 112, to constitute an electroluminescence element.The method that wherein forms metallic cathode 112 for example is a vapour deposition method or a sputtering method.And the material of metallic cathode 112 for example is aluminium, aluminium and lithium fluoride, calcium, magnesium and silver or silver-colored, and its thickness for example is 500 dust to 3000 dusts.
The planar light-emitting element of present embodiment comprises a transparency carrier 100, a dielectric materials layer 102, a semi-transparent metal layer 104, a transparent anode 108, a luminescent layer 110 and a metallic cathode 112.Wherein, dielectric materials layer 102 is to be configured on the transparency carrier 100, and semi-transparent metal layer 104 is to be configured on the dielectric materials layer 102, and dielectric materials layer 102 is to constitute half lens arrangement 106 with semi-transparent metal layer 104.In addition, transparent anode 108 is to be configured on the semi-transparent metal layer 104, and luminescent layer 110 is to be configured on the transparent anode 108, and metallic cathode 112 then is configured on the luminescent layer 110.
Wherein, metallic cathode 112 and pellicle mirror structure 106 (being made up of dielectric materials layer 102 and semi-transparent metal layer 104) are to constitute a metal micro-cavity structure, therefore the excitation photon that is produced in luminescent layer 110 just can form covibration in this resonant cavity, so as to the external quantum efficiency that improves element and the whole efficiency of element.
In addition, semi-transparent metal layer 104 can be simultaneously as the usefulness of an auxiliary anode, so as to reducing the resistance value of anode, and then reduce the energy dissipation of element.
Moreover dielectric materials layer 102 can be used as one of semi-transparent metal layer 104 optical compensating layer, so as to the whole optical property of control semi-transparent metal layer 104.In addition, dielectric materials layer 102 can also promote the tack between semi-transparent metal layer 104 and the transparency carrier 100, and dielectric materials layer 102 also has the aqueous vapor of stopping and reduces effects such as surface roughness.
Ask for an interview shown in Figure 2ly, it illustrates and is the generalized section according to another planar light-emitting element of first embodiment of the invention.
Please refer to Fig. 2, the planar light-emitting element of present embodiment more is included in and forms after transparent anode 108 and the semi-transparent metal layer 104, the mode that cooperates a lithography method or a photoetching technique again, and the transparent anode 108a and the semi-transparent metal layer 104a of formation gap 114 and patterning, so as to defining the position of dot structure.Or utilize the mode of a shade plated film, directly on transparency carrier 100, form the transparent anode 108a and the semi-transparent metal layer 104a of patterning.Wherein, semi-transparent metal level 104a and dielectric materials layer 102 are to constitute half lens arrangement 106a.Afterwards, go up formation one luminescent layer 110 and a metallic cathode 112 in transparent anode 108a in regular turn again.
In addition, the present invention can also utilize above-mentioned method, only forms gap 114a in transparent anode 108, and forms transparent anode 108a (as shown in Figure 3), so as to defining the position of dot structure.
In addition, the present invention can also form an insulating barrier 116,116a (as Fig. 4 and shown in Figure 5), to define the position of dot structure except utilizing gap 114,114a with the position that defines dot structure in gap 114,114a.Or directly on transparent anode 108, form an insulating barrier 116b (as shown in Figure 6), to define the position of dot structure.
Wherein, in gap 114,114a or the method that directly on transparent anode 108, forms insulating barrier 116,116a, 116b for example be to go up with a vapour deposition method or a method of spin coating prior to transparent anode layer 108a to form an insulation material layers (not illustrating) afterwards, cooperate a lithography method again and form insulating barrier 116,116a, 116b, or utilize an ink-jet method or a print process and the material that directly will insulate fills in the position of gap 114,114a or is formed on the transparent anode 108, and form insulating barrier 116,116a, 116b.At this, the material of insulating barrier 116,116a, 116b for example is to be a photosensitive type macromolecule or a non-photosensitive type macromolecule, and the thickness of insulating barrier 116,116a, 116b is greater than 0.05 micron.In addition, the one resistance value of insulating barrier 116,116a, 116b is to be 10
6More than the ohm-cm.
Second embodiment
Fig. 7, it illustrates and is the generalized section according to one of the present invention one second embodiment planar light-emitting element.
Please refer to Fig. 7, the manufacturing process of the planar light-emitting element of present embodiment is that a transparency carrier 100 at first is provided, and wherein transparency carrier 100 can be a plastic transparent substrate or a bendable musical form transparency carrier.Afterwards, on transparency carrier 100, form a dielectric materials layer 102, and form a semi-transparent metal layer 104 on dielectric materials layer 102, wherein semi-transparent metal layer 104 is the usefulness as an anode, and dielectric materials layer 102 constitutes half lens arrangement 106 again simultaneously with semi-transparent metal layer.
At this, the formation method of dielectric materials layer 102 and semi-transparent metal layer 104 with and the related description of material and thickness in first embodiment, describe in detail, do not repeat them here.
Afterwards, on semi-transparent metal layer 104, form a luminescent layer 110, and on luminescent layer 110, form a metallic cathode 112, to constitute an electroluminescence element.Wherein, the formation method of luminescent layer 110 and metallic cathode 112 with and the related description of material and thickness in first embodiment, describe in detail, do not repeat them here.
The planar light-emitting element of present embodiment comprises a transparency carrier 100, a dielectric materials layer 102, a semi-transparent metal layer 104, a luminescent layer 110 and a metallic cathode 112.Wherein, dielectric materials layer 102 is to be configured on the transparency carrier 100, semi-transparent metal layer 104 is to be configured on the dielectric materials layer 102, and wherein semi-transparent metal layer 104 is the usefulness as an anode, and dielectric materials layer 102 constitutes half lens arrangement 106 again simultaneously with semi-transparent metal layer 104.Luminescent layer 110 is to be configured on the semi-transparent metal layer 104.Metallic cathode 112 then is configured on the luminescent layer 110.
Wherein, metallic cathode 112 and pellicle mirror structure 106 (being made up of dielectric materials layer 102 and semi-transparent metal layer 104) are to constitute a metal micro-cavity structure, therefore the excitation photon that is produced in luminescent layer 110 just can form covibration in this resonant cavity, so as to the external quantum efficiency that improves element and the whole efficiency of element.
In addition, because semi-transparent metal layer 104 is the usefulness as an anode, so the planar light-emitting element of present embodiment can save the step of making transparent anode.
Moreover dielectric materials layer 102 can be used as one of semi-transparent metal layer 104 optical compensating layer, so as to the whole optical property of control semi-transparent metal layer 104.In addition, dielectric material layer 102 can also promote the tack between semi-transparent metal layer 104 and the transparency carrier 100, and dielectric material layer 102 also has the aqueous vapor of stopping and reduces effects such as surface roughness.
Ask for an interview shown in Figure 8ly, it illustrates and is the generalized section according to another planar light-emitting element of second embodiment of the invention.
Please refer to Fig. 8, planar light-emitting element of the present invention more is included in and forms after the semi-transparent metal layer 104, the mode that cooperates a lithography method or a photoetching technique again, and the semi-transparent metal layer 104a of formation gap 118 and patterning are to define the position of dot structure.Or utilize the mode of a shade plated film, directly on transparency carrier 100, form the semi-transparent metal layer 104a of patterning.Wherein, semi-transparent metal layer 104a and dielectric materials layer 102 are to constitute half lens arrangement 106a.Afterwards, go up formation one luminescent layer 110 and a metallic cathode 112 in semi-transparent metal layer 104a in regular turn again.
In addition, the present invention can also form an insulating barrier 120 (as shown in Figure 9), to define the position of dot structure except utilizing gap 118 with the position that defines dot structure in gap 118.Or directly on semi-transparent metal layer 104, form an insulating barrier 120a (as shown in figure 10), to define the position of dot structure.Wherein, the method that forms insulating barrier 120,120a with and the related data such as material and thickness and first embodiment in the method for formation insulating barrier identical, do not repeat them here.
Planar light-emitting element of the present invention and manufacture method thereof, because metallic cathode 112 is to constitute a metal micro-cavity structure with pellicle mirror structure 106, so that the effect that the excitation photon that luminescent layer 110 is produced produces multipath reflection betwixt, make most photon energy penetrate, and avoid to radiate out because of the photo emissions angle sinks into element internal greater than critical angle with subvertical direction.So just, can promote the external quantum efficiency of element, and improve the whole efficiency of light-emitting component.
The design of metal micro-cavity structure of the present invention can be applied in the organic electroluminescent element and the inorganic electroluminescence element of various visible wavelength ranges, the organic electric-excitation luminescent light source of for example full-color organic light emitting diode display, various monochromes and inorganic electroluminescence light source of various monochromes or the like.
Comprehensive the above, the present invention has following advantage:
1. planar light-emitting element of the present invention and manufacture method thereof can effectively be promoted the external quantum efficiency of element, and then improve the whole efficiency of light-emitting component.
2. planar light-emitting element of the present invention and manufacture method thereof not only can reduce process complexity, are suitable for batch production technique, but also can reach the requirement of element downsizing.
3. planar light-emitting element of the present invention and manufacture method thereof can prevent effectively that the moisture scattering and permeating from carrying out the effect of element internal, so as to increasing the life-span of element.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (23)
1. a planar light-emitting element is characterized in that, comprising:
One transparency carrier;
One dielectric materials layer is configured on this transparency carrier;
One semi-transparent metal layer is configured on this dielectric materials layer, and wherein this dielectric materials layer and this semi-transparent metal layer are to constitute half lens arrangement;
One transparent anode is configured on this semi-transparent metal layer, has the gap in this transparent anode and this semi-transparent metal layer to define the position of dot structure;
One luminescent layer is configured on this transparent anode; And
One metallic cathode is configured on this luminescent layer.
2. planar light-emitting element as claimed in claim 1 is characterized in that, wherein this transparency carrier is to be a plastic substrate.
3. planar light-emitting element as claimed in claim 1 is characterized in that, wherein this transparency carrier is to be a bendable musical form substrate.
4. planar light-emitting element as claimed in claim 1 is characterized in that wherein the material of this dielectric materials layer is to be selected from TiO
2, Ta
2O
5, the nitride of silicon, the nitrogen oxide of silicon, the oxide of silicon, ZnS-SiO
2The nitride of Al and Al alloy and oxide, the nitride of Ti, the nitride of Ge and Ge alloy, the oxide of Fe, the nitride of Bi and oxide, the fluoride of Ca and oxide, the oxide of Cd and sulfide, the oxide of Ce and fluoride, the bromide of Cs and iodide, indium arsenide, indium antimonide, the oxide of indium, the bromide of potassium and chloride, the fluoride of lanthanum and oxide, the fluoride of lithium, the oxide of magnesium and fluoride, sodium fluoride, the oxide of neodymium and fluoride, plumbous chloride, plumbous fluoride, plumbous sulfide and tellurides, the oxide of platinum, the oxide of antimony and sulfide or carborundum.
5. planar light-emitting element as claimed in claim 1 is characterized in that, wherein the thickness of this dielectric materials layer is to be 100 dust to 5000 dusts.
6. planar light-emitting element as claimed in claim 1 is characterized in that wherein the material of this semi-transparent metal layer comprises Al, Ag, Au, Cu, Ni, Pd, Pt, AlTi, AgPdCu, AgCuCr or AgCuAu.
7. planar light-emitting element as claimed in claim 1 is characterized in that, wherein the thickness of this semi-transparent metal layer is to be 20 dust to 1000 dusts.
8. planar light-emitting element as claimed in claim 1 is characterized in that, wherein the material of this transparent anode comprises indium tin oxide, indium-zinc oxide or aluminium zinc oxide.
9. planar light-emitting element as claimed in claim 1 is characterized in that, wherein the thickness of this transparent anode is to be 200 dust to 5000 dusts.
10. planar light-emitting element as claimed in claim 1 is characterized in that, wherein more comprises an insulating barrier, is configured between this transparent anode and this luminescent layer, and this insulating barrier is inserted this gap, in order to define the position of this dot structure.
11. planar light-emitting element as claimed in claim 10 is characterized in that, wherein the material of this insulating barrier is to be a photosensitive type macromolecule or a non-photosensitive type macromolecule, and the thickness of this insulating barrier is greater than 0.05 micron.
12. planar light-emitting element as claimed in claim 11 is characterized in that, wherein the one resistance value of this insulating barrier is to be 10
6More than the ohm-cm.
13. planar light-emitting element as claimed in claim 1, it is characterized in that, wherein the material of this luminescent layer comprises an organic light emission material or an inorganic light-emitting material, and the light that this luminescent layer radiated comprises blue light, green glow, ruddiness, white light and other monochromatic light.
14. planar light-emitting element as claimed in claim 1 is characterized in that, wherein the thickness of this luminescent layer is to be 500 dust to 3000 dusts.
15. planar light-emitting element as claimed in claim 1 is characterized in that, wherein the material of this metallic cathode comprises aluminium, aluminium and lithium fluoride, calcium, magnesium and silver or silver-colored.
16. planar light-emitting element as claimed in claim 1 is characterized in that, wherein the thickness of this metallic cathode is to be 500 dust to 3000 dusts.
17. the manufacture method of a planar light-emitting element is characterized in that, comprising:
One transparency carrier is provided;
On this transparency carrier, form a dielectric materials layer;
Form a semi-transparent metal layer on this dielectric materials layer, wherein this dielectric materials layer and this semi-transparent metal layer are to constitute half lens arrangement;
On this semi-transparent metal layer, form a transparent anode;
In this transparent anode and this semi-transparent metal layer, form the gap to define the position of dot structure;
On this transparent anode, form a luminescent layer; And
On this luminescent layer, form a metallic cathode.
18. the manufacture method of planar light-emitting element as claimed in claim 17 is characterized in that, the method that wherein forms this dielectric materials layer comprises a sputtering method, a vapour deposition method, an ion plating or a chemical vapour deposition technique.
19. the manufacture method of planar light-emitting element as claimed in claim 17 is characterized in that, the method that wherein forms this semi-transparent metal layer comprises a sputtering method or an ion plating.
20. the manufacture method of planar light-emitting element as claimed in claim 17, it is characterized in that, wherein more comprise being formed with an insulation layer patterned between this transparent anode and this luminescent layer, this insulation layer patterned is inserted this gap, in order to define the position of this dot structure.
21. the manufacture method of planar light-emitting element as claimed in claim 17 is characterized in that, the method that wherein forms this transparent anode comprises a sputtering method or an ion plating.
22. the manufacture method of planar light-emitting element as claimed in claim 17 is characterized in that, the method that wherein forms this luminescent layer comprises a vapour deposition method, a method of spin coating, an ink-jet method or a print process.
23. the manufacture method of planar light-emitting element as claimed in claim 17 is characterized in that, the method that wherein forms this metallic cathode comprises a vapour deposition method or a sputtering method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101006187A CN100541857C (en) | 2003-10-13 | 2003-10-13 | Planar light-emitting element and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101006187A CN100541857C (en) | 2003-10-13 | 2003-10-13 | Planar light-emitting element and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1607877A CN1607877A (en) | 2005-04-20 |
| CN100541857C true CN100541857C (en) | 2009-09-16 |
Family
ID=34756020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101006187A Expired - Fee Related CN100541857C (en) | 2003-10-13 | 2003-10-13 | Planar light-emitting element and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100541857C (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101689336B1 (en) * | 2010-06-30 | 2016-12-26 | 삼성디스플레이 주식회사 | Organic Light Emitting Diode Display |
| KR20130000218A (en) * | 2011-06-22 | 2013-01-02 | 삼성디스플레이 주식회사 | Electrode including magnetic material and organic light emitting device using the electrode |
| CN104167505A (en) * | 2013-05-20 | 2014-11-26 | 海洋王照明科技股份有限公司 | Organic light emitting device and preparation method thereof |
| CN104183762A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light emission diode, display screen and terminal |
| CN106935720B (en) * | 2017-03-13 | 2019-06-14 | 京东方科技集团股份有限公司 | Display base plate, display panel, display equipment and the method for manufacturing it |
| CN107290359A (en) * | 2017-06-23 | 2017-10-24 | 天津工业大学 | Dual intensity analyzes grating |
| US20210057875A1 (en) * | 2019-08-21 | 2021-02-25 | Hamamatsu Photonics K.K. | Sintered body, sputtering target, film, quantum cascade laser, and method of film formation |
-
2003
- 2003-10-13 CN CNB2003101006187A patent/CN100541857C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1607877A (en) | 2005-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6220870B2 (en) | ORGANIC LIGHT EMITTING DIODE (OLED) ELEMENT LAMINATE, ITS MANUFACTURING METHOD, AND ORGANIC LIGHT EMITTING DIODE (OLED) ELEMENT HAVING THE SAME | |
| KR101476488B1 (en) | Light transmitting substrate, method for manufacturing light transmitting substrate, organic led element and method for manufacturing organic led element | |
| TWI284492B (en) | Organic EL device | |
| CN101042450B (en) | Display unit | |
| TWI482527B (en) | A light-transmitting substrate, a method for manufacturing the same, an organic LED device, and a method for manufacturing the same | |
| EP2563093A1 (en) | Organic electroluminescent element and lighting device | |
| KR20110116142A (en) | Substrate for electronic device and electronic device using same | |
| JP2006331694A (en) | Organic light emitting element and substrate for the same | |
| KR20100138956A (en) | Organic electroluminescent device, illuminating device and display device | |
| JP2003036969A (en) | Light emitting element, and display unit and illumination device using the same | |
| JP6573160B2 (en) | Light emitting element | |
| US8638031B2 (en) | Organic electroluminescence device | |
| KR20100073228A (en) | Luminous element having improvement of external lighting efficiency | |
| CN100541857C (en) | Planar light-emitting element and manufacture method thereof | |
| CN104752618A (en) | Light-emitting display device and preparation method thereof | |
| WO2024022057A1 (en) | Light-emitting module and light-emitting device | |
| Tyan et al. | 61.2: Fluorescent White OLED Devices with Improved Light Extraction | |
| JP2003234178A (en) | Light-emitting element, its manufacturing method, and display equipment | |
| TWI220376B (en) | Flat panel lighting device and fabricating method thereof | |
| TW576127B (en) | Organic electroluminescence device and manufacturing method thereof | |
| JP2010080064A (en) | Organic light-emitting device | |
| CN1568110A (en) | Organic electroluminescent assembly and manufacturing method thereof | |
| Mikami et al. | 60.4 L: Late‐News paper: High efficiency 200‐lm/W green light emitting organic devices prepared on High‐Index of refraction substrate | |
| CN100468819C (en) | Organic electroluminance display structure | |
| CN1937873A (en) | Light-emitting device and its panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090916 Termination date: 20131013 |