CN100535753C - Immersion lithography system, and method of performing irradiation to semiconductor structure having a photoresistive layer - Google Patents
Immersion lithography system, and method of performing irradiation to semiconductor structure having a photoresistive layer Download PDFInfo
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- CN100535753C CN100535753C CNB2004100568482A CN200410056848A CN100535753C CN 100535753 C CN100535753 C CN 100535753C CN B2004100568482 A CNB2004100568482 A CN B2004100568482A CN 200410056848 A CN200410056848 A CN 200410056848A CN 100535753 C CN100535753 C CN 100535753C
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Abstract
An immersion lithographic system 10 comprises an optical surface 51, an immersion fluid 60 contacting at least a portion of the optical surface, and a semiconductor structure 80 having a topmost photoresist layer 70 having a thickness of less than about 5000 angstroms, wherein a portion of the photoresist is in contact with the immersion fluid. Further, a method for illuminating a semiconductor structure 80 having a topmost photoresist layer 70 with a thickness of less than about 5000 angstroms, comprising introducing an immersion fluid 60 into a space between an optical surface 51 and the photoresist layer, and directing light preferably with a wavelength of less than about 450 nm through the immersion fluid and onto the photoresist.
Description
Technical field
The present invention relates to a kind of processing procedure of semiconductor element, particularly relate to system, method and the employed infiltration fluid thereof of infiltration type lithography.
Background technology
In typical etching system, in order to differentiate the contour parsing figure of point, line or image, etching system must have high resolving power.In the employed etching system of integrated circuit (IC) industry, generally be directly with optical projection to photoresist layer, with the patterned electrodes element.Etching system has used many decades in the IC industry, and is supposed to solving the following processing procedure of 50 nano-scale linewidths.Therefore, the resolution of improving etching system has become semiconducter IC chip manufacturer and has made one of high density, high-speed most important problem of semiconducter IC chip.
For etching system, its resolution R is by formula R=k
1λ/NA decision.Wherein, k
1Be lithographic constant, λ is the wavelength of image light source, and NA is a numerical aperture, is calculated by formula NA=nsin θ, and wherein θ is the half-open aperture at angle in the system, and n is the refractive index of the material between etching system and the base material.
Usually, there are three kinds of methods can be used for adjusting the etched resolution of photoetching, to improve photoetching technique.First method is the wavelength X that reduces the image light source.For example, use argon fluoride excimer laser (λ=193 nanometers) to replace G ray (λ=436 nanometers) with the reduction wavelength.Recently, the wavelength of image light source can taper to 157 nanometers, even is reduced to the wavelength of extreme ultraviolet (EUV).Second method is to reduce lithographic constant k
1Value, for example, use the irradiation of phase displacement light-cover and off-axis can be with k
1Value reduce to 0.4 by 0.6.The third method then is by improving the value that optical design, manufacturing technology and measure control promote numerical aperture NA.At present, the value of numerical aperture NA can increase to about 0.8 by 0.35.But the above-mentioned common method of resolution of improving is near physics and technological limit.For example, the value of NA (being nsin θ) is subjected to the restriction of n, if use is the optical system with free space (free space), then this moment, n equaled 1, and promptly the upper limit of NA is 1.
With respect to general photoetching technique, in recent years, immersion lithography (immersionlithographic) technology has developed into the value that can allow further to increase NA (numerical aperture).In infiltration type lithography, base material is soaked into having high refractive index liquid or soak under the fluid carries out photolithographic fabrication, fluid with high index of refraction (n＞1) can fill up the space (being filled by air originally) between outermost optical unit of etching system (for example lens) and the base material, therefore, utilize this kind method, lens can have the NA value greater than 1.PFPE (PFPE), cyclooctane, deionized water (DI-water) etc. have the fluid of high index of refraction, all can be used in the infiltration type lithography.Because the NA value has broken through original upper limit 1, therefore, compares with general photoetching technique, infiltration type lithography can provide more accurate photolithographic fabrication resolution.
The high-index fluid that is used for infiltration type lithography should satisfy following several requirements: this fluid must have low absorption coefficient for employed light with specific wavelength; This fluid must have the high refractive index of appropriateness to revise the refractive index of total system; This fluid must have compatibility and excellent contact chemically with the photoresistance on optical devices (camera lens) and the substrate.
Below summed up the file of relevant infiltration type lithography:
(1) publication number is the United States Patent (USP) Methods andapparatus employing an index matching medium of US 2002/0163629.
(2) patent No. is the United States Patent (USP) Method for opticalinspection and lithography of US5900354.
(3) patent No. is the United States Patent (USP) Immersion typeprojection exposure apparatus of US5610683.
(4) patent No. is the United States Patent (USP) Lithography systememploying a solid immersion lens of US5121256.
(5) J.A.Hoffnagle etc.Liquid?immersionDeep-ultraviolet?interferometric?lithography。J.VacuumScience?and?technology?B，Vol.17，No.6，pp：3306-3309：1999。
(6) M.Switkes etc.Immersion?lithography?at?157nm。J.Vacuum?Science?and?technology?B，Vol.19，No.6，pp：2353-2356：1999。
As soaking into fluid, still as the water that soaks into fluid, its pH value is not further controlled traditional infiltration type lithography with water.Thus, the employed photoresistance of photoetching technique (particularly chemical amplification photoresistance) can be soaked into the hydroxide ion (OH of fluid or water
-) pollute.In addition, the employed material of some optical lens, for example calcium fluoride also has certain solubleness in water.
Therefore, researching and developing better infiltration type lithography and method, improve the problem that prior art produces, is anxious open question in the semiconductor technology.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of immersion lithography system, be applicable to the infiltration fluid of immersion lithography system, and to the top irradiation method that is formed with the semiconductor structure of photoresist layer, both improved the resolution of immersion lithography system, reduced to soak into fluid again to the pollution of photoresist layer with to the dissolving of optical lens.
To achieve these goals, the invention provides a kind of immersion lithography system, comprise: an optical surface, wherein said optical surface comprises calcium fluoride or magnesium fluoride; And pH value wherein should soak into fluid and contact with the some of this optical surface at least less than 7 infiltration fluid, was dissolved with fluorine-containing compound in the wherein said infiltration fluid, and the concentration of fluorine ion is greater than 0.01 mol in the described infiltration fluid.
According to immersion lithography system of the present invention, described infiltration fluid comprises water.
According to immersion lithography system of the present invention, the pH value of described infiltration fluid is between 2 to 7.
According to immersion lithography system of the present invention, the pH value of described infiltration fluid is between 4-7.
According to immersion lithography system of the present invention, the pH value of described infiltration fluid is between 6 to 7.
According to immersion lithography system of the present invention, described optical surface comprises silicon dioxide.
According to immersion lithography system of the present invention, described optical surface also comprises molten silicon.
According to immersion lithography system of the present invention, be dissolved with fluorine-containing compound in the described infiltration fluid.
According to immersion lithography system of the present invention, described fluorochemicals is to be mixed by in sodium fluoride, potassium fluoride, the hydrofluorite one or more.
According to immersion lithography system of the present invention, the concentration of fluorine ion is greater than 0.1 mol in the described infiltration fluid.
According to immersion lithography system of the present invention, described optical surface below has a semiconductor element substrate, and the superiors of this semiconductor element substrate have a photoresist layer.
According to immersion lithography system of the present invention, described photoresist layer comprises the chemical amplification type photoresistance.
According to immersion lithography system of the present invention, described semiconductor element substrate soaks in described infiltration fluid.
According to immersion lithography system of the present invention, have supporting platform seat below the described semiconductor element substrate, this supporting platform seat is soaked in described infiltration fluid.
To achieve these goals, the present invention also provides a kind of immersion lithography system, it is characterized in that this immersion lithography system comprises: an optical surface, and wherein said optical surface comprises calcium fluoride; PH value wherein should be soaked into fluid and contact with the some of this optical surface at least less than 7 infiltration fluid, was dissolved with fluorine-containing compound in the wherein said infiltration fluid, and the concentration of fluorine ion is greater than 0.01 mol in the described infiltration fluid; And wavelength is less than the image light source of 197 nanometers, and wherein, described optical surface below has a semiconductor element substrate, and the superiors of this semiconductor element substrate have a photoresist layer.
According to immersion lithography system of the present invention, the pH value of described infiltration fluid is between 6 to 7.
According to immersion lithography system of the present invention, be dissolved with fluorine-containing compound in the described infiltration fluid, this fluorochemicals is to be mixed by in sodium fluoride, potassium fluoride, the hydrofluorite one or more.
According to immersion lithography system of the present invention, the concentration of fluorine ion is greater than 0.01 mol in the described infiltration fluid.
To achieve these goals, the invention provides a kind of to the top irradiation method that is formed with the semiconductor structure of photoresist layer, comprise: import a pH value in the space between optical surface and photoresist layer less than 7 infiltration fluid, wherein said optical surface comprises calcium fluoride or magnesium fluoride; And provide a luminous energy directly to pass this infiltration fluid to shine on this photoresist layer, be dissolved with fluorine-containing compound in the wherein said infiltration fluid, the concentration of fluorine ion is greater than 0.01 mol in the described infiltration fluid.
To the top irradiation method that is formed with the semiconductor structure of photoresist layer, the pH value of described infiltration fluid is between 2 to 7 according to of the present invention.
To the top irradiation method that is formed with the semiconductor structure of photoresist layer, the pH value of described infiltration fluid is between 6 to 7 according to of the present invention.
According to of the present invention the top irradiation method that is formed with the semiconductor structure of photoresist layer is dissolved with fluorine-containing compound in the described infiltration fluid, this fluorochemicals is to be mixed by in sodium fluoride, potassium fluoride, the hydrofluorite one or more.
To the top irradiation method that is formed with the semiconductor structure of photoresist layer, the concentration of fluorine ion is greater than 0.1 mol in the described infiltration fluid according to of the present invention.
To the top irradiation method that is formed with the semiconductor structure of photoresist layer, described photoresist layer comprises the chemical amplification type photoresistance according to of the present invention.
To the top irradiation method that is formed with the semiconductor structure of photoresist layer, this irradiation method also comprises develops to described photoresist layer according to of the present invention.
, described photoresist layer is carried out step of developing comprise described photoresist layer is infiltrated on the tetramethyl Dilute Ammonia Solution the top irradiation method that is formed with the semiconductor structure of photoresist layer according to of the present invention.
Immersion lithography system provided by the invention and to the top irradiation method that is formed with the semiconductor structure of photoresist layer, soak into fluid by between optical surface and photoresist layer, importing, improve the refractive index of material between etching system and the semiconductor structure, and then improved the resolution of etching system.Simultaneously, owing to make the pH value of soaking into fluid, suppressed in the infiltration fluid hydroxide ion to the pollution of photoresist layer, the accuracy that has improved successive process less than 7; Owing in soaking into fluid, introduce the ion that optical lens material comprised, utilize common-ion effcet to suppress to soak into the dissolving of fluid to optical lens, reduced to soak into the damage of fluid to optical lens.
Description of drawings
Fig. 1 is the synoptic diagram of infiltration type lithography of the present invention system.
Fig. 2 a and Fig. 2 b are the hydroxide ion (OH that soaks into fluid (for example water)
-) and the photoresist layer (photosensitive material) of desire exposure between interactional synoptic diagram.
Fig. 3 a is soaked into alkali (hydroxide ion, the OH in the fluid
-) photoresist layer that pollutes has the synoptic diagram of T type profile.
Fig. 3 b is that alkali (hydroxide ion, the OH in the fluid soaked at the end
-) photoresist layer that pollutes has the synoptic diagram of preferable photoresistance section.
Fig. 4 a and Fig. 4 b are the hydrogen ion (H that soaks into fluid (for example water)
+) and optical element (lens material) between interactional synoptic diagram.
Fig. 5 soaks into the pH value of fluid and the relation curve of calcium fluoride lens solubleness.
Fig. 6 soaks into F in the fluid
-Concentration and the relation curve of calcium fluoride lens solubleness.
Embodiment
Below be preferred embodiment of the present invention, be used for illustrating immersion lithography system according to the invention and use-pattern thereof.
Fig. 1 is the synoptic diagram of 10 1 embodiment of infiltration type lithography system.This infiltration type lithography system 10 comprises an image light source 20, luminous energy bundle 21 of these light source 20 emissions, and by lens 22, this luminous energy bundle 21 is by 30 and optical element modules 40 of a shielding, at last by having the outermost layer lens 50 of optical surface 51 then.Space between these outermost layer lens 50 and the photosensitive material 70 is used and is soaked into fluid 60 fillings, and this photosensitive material 70 is formed on the semiconductor element substrate 80.
In a preferred embodiment, this semiconductor element substrate 80 can be the semiconductor substrate that forms integrated circuit on it.For example, this semiconductor element substrate 80 can be one and has transistorized crystal silicon substrate (for example monocrystalline silicon substrate or silicon-coated insulated plate).
Fig. 2 a is the enlarged diagram of outermost layer lens 50, photosensitive material 70 and the infiltration fluid 60 between them in the etching system 10.Outermost layer lens 50 contact with infiltration fluid 60.In the conventional lithography system, soaking into fluid 60 is water.But other fluid, for example cyclooctane and PFPE (PFPE) also can be used as and soak into fluid 60.Soak into fluid 60 and contain hydroxide ion (OH
-).If soaking into fluid 60 is water, hydroxide ion can exist because of dissociating of water, and its balanced type is as follows:
H
2O
(1)→ H
+ (aq)+ OH
- (aq)(formula I)
Wherein, H
+Be hydrogen ion, OH
-It is hydroxide ion.Symbol 1 and aq represent liquid and aqueous solution state respectively.Soak into fluid 60 and contact with the upper surface 90 of photosensitive material 70, shown in Fig. 2 a, 90 contact with the part of photosensitive material or photoresistance 70 at the interface.Wherein, photosensitive material 70 can be one with 193 nanometers, 157 nanometers or littler wavelength photoresist layer as the image light source.
When the photosensitive material 70 of presumptive area during in 21 times exposures of doses luminous energy bundle, being exposed partly of photosensitive material 70 can produce a photocatalyst.Photosensitive material 70 can adopt chemical amplification type (CA) photoresistance, and this material is widely used in the photoetching technique of 193 nanometers or 157 nano wave lengths.The catalyzer that produces by exposure normally can discharge sour catalyzer, represents with HA.For example, the ester class functional group of the protonated photoresistance macromolecular material of catalyzer HA meeting forms more diffluent acid, and produces proton or hydrogen ion (H simultaneously again
+), this proton or hydrogen ion be other ester class of deprotonation functional group again, and then forms other acid that can dissolve and regeneration H
+This is protonated, form soluble acids, protogenic successive reaction is called the chemical amplification type reaction again.
Fig. 2 b is the magnification fluoroscopy Figure 100 that soaks into the fluid 60 (water) and the interface 90 between the photosensitive material 70 of having exposed.It should be noted that the catalyzer that can discharge acid may exist with the form of HA, perhaps is dissociated into H
+And A
-Form.Mention in the background technology part, if it is very disadvantageous having a large amount of hydroxide ions to exist in the infiltration fluid 60, because the hydroxide ion 110 that soaks in the fluid 60 can be diffused into photosensitive material 70 and soak into the surface that fluid 60 contacts, and the neutralizing acid catalyzer.Therefore, in the zone that photosensitive material 70 contacts with infiltration fluid 60, the acid catalyst that photosensitive material 70 irradiations are produced is consumed, and causes near the chemical amplification type reaction rate of the photosensitive material 70 interface 90 to descend.
Shown in Fig. 3 a, using developer solution, Tetramethylammonium hydroxide (TMAH) for example, after the photosensitive material 70 (photoresistance) after the exposure developed, the part 200 of photoresistance exposure can be dissolved.Yet, because the photosensitive material 70 that is exposed chemical amplification type reaction rate in the zone of adjacent interface 90 is lower, make its soluble end diminish in development step, cause photoresistance line 210 to have T shape section, shown in Fig. 3 a.Therefore, if the photosensitive material surface constantly has acid catalyst to be neutralized, graphically the photosensitive material 70 after can have the live width L1 of broad.
According to a preferred embodiment of the present invention, soak into OH in the fluid 60
-The concentration of ion is controlled in 10
-7Mol/L (or mol/dm
3, wherein mol, L and dm represent mole respectively, rise and decimetre).The present invention is by reducing OH
-The concentration of ion makes it less than 10
-7Mol/L, like this, the photoresistance surface consumption of exposure area acid catalyst can be suppressed.Therefore, by reducing OH
-The concentration of ion and the OH that is diffused into photoresistance
-The amount of ion makes photosensitive material 220 after graphical have preferable live width L2 shown in Fig. 3 b.
Adding excessive proton or hydrogen ion in soaking into fluid 60 is to reduce OH in the water
-A kind of method of ion concentration.In water, add extra hydrogen ion the balance of formula I is moved to the left, thereby make OH
-The concentration of ion is less than 10
-7Mol/L.In soaking into fluid 60, add acid and can change hydrionic concentration in this infiltration fluid 60, and the kind of acid can be organic acids such as acetate or formic acid, also can be mineral acids such as watery hydrochloric acid or dilute sulfuric acid, can also mix use.
Therefore, according to a preferred embodiment of the present invention, soak into fluid 60 and have more excessive pH to lower the concentration of hydroxide ion in the balanced type.According to the present invention, the preferred values that soaks into pH in the fluid 60 should be greater than 10
-7Mol/L that is to say, this pH value of soaking into fluid 60 is best less than 7, and the preferred range of hydrionic concentration under room temperature (300K) is about 10
-7Mol/L to 10
-7Mol/L, or 10
-7Mol/L to 10
-4Mol/L, or 10
-7Mol/L to 10
-5Mol/L, optimum range is about 10
-7Mol/L to 10
-6Mol/L.In above-mentioned pH scope, the pH value of soaking into fluid 60 is less than 7, and preferred range is about between 2 to 7, and between better scope is about 4 to 7 or be about between 5 to 7, optimum range is about between 6 to 7.The definition of pH value is-log[H
+], [H wherein
+] be hydrionic volumetric molar concentration.In soaking into fluid 60, add the chemical enlarge-effect that acid can further improve photoresistance.
Fig. 4 a soaks into the sectional view that fluid 60 (being water) contacts with outermost layer lens 50, and Fig. 4 b is the enlarged perspective 300 that soaks into the optical surface 51 of fluid 60 (being water) and outermost layer lens 50.The surface of outermost layer lens 50 may have very small portion and be dissolved in the infiltration fluid 60, and lens material can be silicon dioxide, molten silicon (fused silica), magnesium fluoride (MgF
2) or calcium fluoride (CaF
2).With the employed calcium fluoride lens material of a preferred embodiment of the present invention is example, can form calcium ion (Ca after it is water-soluble
2+) and fluorine ion (F
-), as follows:
CaF
2 (s)→ Ca
2+ (aq)+ 2F
- (aq)(formula II)
At room temperature, 1 liter of p H value is that 7 water can dissolve about 3 * 10
-4Mole solid calcium fluoride.Constantly flow owing to soak into fluid, so the calcium fluoride lens material can be dissolved in the water with fixed concentration, be taken away by water then.The amount of dissolving can increase with the increase of instrument service time (for example several years).If lens material, can cause the lens surface distortion at the different solubility of different lens area, even can cause image distortion and instrument failure.
Fig. 5 is CaF
2Molar solubility in the water of different pH values (or acidity).When the pH of water value when 7 reduce, promptly acidly increase CaF
2Solubleness also can increase thereupon, wherein when the pH value less than 4 the time, CaF
2The increase of solubleness is more remarkable.The calcium fluoride reason that solubleness increases in acidulous water mainly is because the increase of pH.If hydrogen ion is excessive, hydrogen ion (H then
+) be easy to and fluorine ion (F
-) in conjunction with and balanced type is moved right, produce hydrofluorite (HF) aqueous solution:
H
+ (aq)+ F
- (aq)→ HF
(aq)(formula III)
Because fluorine ion has been consumed,, cause more CaF so the balanced type of formula II can move right when producing hydrofluorite
2The solid dissolving, this can accelerating lens CaF
2The loss of material.Therefore, when the pH value maintains 7 when following, though can reduce the influence that acid catalyst is consumed, the pH value can not be low excessively, otherwise can cause CaF
2Lens material seriously dissolves.Therefore, infiltration fluid of the present invention, in less than 7 scope, preferred range is 2 to 7 to its pH value substantially, and better scope is 4 to 7, and optimum range is 5 to 7, even 6 to 7.
By another preferred embodiment of the present invention as can be known, utilize common-ion effcet can reduce the solubleness of lens material.For example, if the material of outermost layer lens 50 is CaF
2, then make to soak in the fluid 60 (water) and contain certain density fluorine ion, can suppress CaF
2Dissolving.According to common-ion effcet, the extra fluorine ion that adds can make formula II be moved to the left, thereby effectively suppresses CaF
2Dissolving.
As shown in Figure 6, along with the increase of soaking into fluorinion concentration in the fluid 60, CaF
2Molar solubility can reduce.The concrete practice can be to add the fluorochemicals of highly dissoluble in water, as the potpourri of sodium fluoride, potassium fluoride, hydrofluorite or above material.In another preferred embodiment of the present invention, this fluorochemicals is good with hydrofluorite, and the potpourri of hydrofluorite and sodium fluoride is then better.Infiltration fluid of the present invention, its fluorinion concentration are greater than 0.01mol/L, and preferred values is greater than 0.05mol/L, and optimum value is greater than 0.1mol/L.
In addition, it should be noted that, immersion lithography system of the present invention can also comprise other known practice that is applicable to infiltration type lithography, for example, immersion lithography system can and be exposed between the wafer partly at the outermost layer lens and soak into the infiltration fluid, perhaps the full wafer wafer is soaked in soaking into fluid, perhaps whole base station is all soaked in soaking into fluid.
Though the present invention by the preferred embodiment explanation as above, this preferred embodiment is not in order to limit the present invention.Those skilled in the art without departing from the spirit and scope of the present invention, should have the ability this preferred embodiment is made various changes and replenished, so protection scope of the present invention is as the criterion with the scope of claims.
Being simply described as follows of symbol in the accompanying drawing:
10: infiltration type lithography system 22: lens
20: image light source 30: shielding
21: light energy bundle 40: optical element module
50: outermost layer lens 100: enlarged perspective
51: optical surface 110: the hydroxyl that diffuses to photosensitive material
60: infiltrate the fluid ion
70: photosensitive material 200: the part of photoresistance exposure
80: semiconductor element substrate 210: photoresistance line with T shape section
85: wafer support pedestal 220: the photoresistance line
90: the upper surface 300 of photosensitive material: enlarged perspective
Claims (22)
1. immersion lithography system is characterized in that this immersion lithography system comprises:
An optical surface, wherein said optical surface comprises calcium fluoride or magnesium fluoride; And
PH value wherein should be soaked into fluid and contact with the some of this optical surface at least less than 7 infiltration fluid, was dissolved with fluorine-containing compound in the wherein said infiltration fluid, and the concentration of fluorine ion is greater than 0.01 mol in the described infiltration fluid.
2. immersion lithography system according to claim 1 is characterized in that: described infiltration fluid comprises water.
3. immersion lithography system according to claim 2 is characterized in that: the pH value of described infiltration fluid is between 2 to 7.
4. immersion lithography system according to claim 3 is characterized in that: the pH value of described infiltration fluid is between 4 to 7.
5. immersion lithography system according to claim 4 is characterized in that: the pH value of described infiltration fluid is between 6 to 7.
6. immersion lithography system according to claim 1 is characterized in that: described fluorochemicals is to be mixed by in sodium fluoride, potassium fluoride, the hydrofluorite one or more.
7. immersion lithography system according to claim 1 is characterized in that: the concentration of fluorine ion is greater than 0.1 mol in the described infiltration fluid.
8. immersion lithography system according to claim 1 is characterized in that: described optical surface below has a semiconductor element substrate, and the superiors of this semiconductor element substrate have a photoresist layer.
9. immersion lithography system according to claim 8 is characterized in that: described photoresist layer comprises the chemical amplification type photoresistance.
10. immersion lithography system according to claim 8 is characterized in that: described semiconductor element substrate soaks in described infiltration fluid.
11. immersion lithography system according to claim 8 is characterized in that: have supporting platform seat below the described semiconductor element substrate, this supporting platform seat is soaked in described infiltration fluid.
12. an immersion lithography system is characterized in that this immersion lithography system comprises:
An optical surface, wherein said optical surface comprises calcium fluoride;
PH value wherein should be soaked into fluid and contact with the some of this optical surface at least less than 7 infiltration fluid, was dissolved with fluorine-containing compound in the wherein said infiltration fluid, and the concentration of fluorine ion is greater than 0.01 mol in the described infiltration fluid; And
Wavelength is less than the image light source of 197 nanometers,
Wherein, described optical surface below has a semiconductor element substrate, and the superiors of this semiconductor element substrate have a photoresist layer.
13. immersion lithography system according to claim 12 is characterized in that: the pH value of described infiltration fluid is between 6 to 7.
14. immersion lithography system according to claim 12 is characterized in that: this fluorochemicals is to be mixed by in sodium fluoride, potassium fluoride, the hydrofluorite one or more.
15. one kind to the top irradiation method that is formed with the semiconductor structure of photoresist layer, it is characterized in that this irradiation method comprises:
Import a pH value in the space between optical surface and photoresist layer less than 7 infiltration fluid, wherein said optical surface comprises calcium fluoride or magnesium fluoride; And
Provide a luminous energy directly to pass this infiltration fluid and shine on this photoresist layer, be dissolved with fluorine-containing compound in the wherein said infiltration fluid, the concentration of fluorine ion is greater than 0.01 mol in the described infiltration fluid.
16. according to claim 15 to the top irradiation method that is formed with the semiconductor structure of photoresist layer, it is characterized in that: the pH value of described infiltration fluid is between 2 to 7.
17. according to claim 16 to the top irradiation method that is formed with the semiconductor structure of photoresist layer, it is characterized in that: the pH value of described infiltration fluid is between 6 to 7.
18. according to claim 15 to the top irradiation method that is formed with the semiconductor structure of photoresist layer, it is characterized in that: this fluorochemicals is to be mixed by in sodium fluoride, potassium fluoride, the hydrofluorite one or more.
19. according to claim 15 to the top irradiation method that is formed with the semiconductor structure of photoresist layer, it is characterized in that: the concentration of fluorine ion is greater than 0.1 mol in the described infiltration fluid.
20. according to claim 15 to the top irradiation method that is formed with the semiconductor structure of photoresist layer, it is characterized in that: described photoresist layer comprises the chemical amplification type photoresistance.
21. according to claim 15 to the top irradiation method that is formed with the semiconductor structure of photoresist layer, it is characterized in that: this irradiation method also comprises develops to described photoresist layer.
22. according to claim 21 to the top irradiation method that is formed with the semiconductor structure of photoresist layer, it is characterized in that: described photoresist layer is carried out step of developing comprise described photoresist layer is infiltrated on the tetramethyl Dilute Ammonia Solution.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US49819503P | 2003-08-25 | 2003-08-25 | |
| US60/498,195 | 2003-08-25 | ||
| US10/803,712 US7700267B2 (en) | 2003-08-11 | 2004-03-18 | Immersion fluid for immersion lithography, and method of performing immersion lithography |
| US10/803,712 | 2004-03-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1655061A CN1655061A (en) | 2005-08-17 |
| CN100535753C true CN100535753C (en) | 2009-09-02 |
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ID=34594584
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|---|---|---|---|
| CNB2004100568482A Active CN100535753C (en) | 2003-08-25 | 2004-08-25 | Immersion lithography system, and method of performing irradiation to semiconductor structure having a photoresistive layer |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN100535753C (en) |
| SG (1) | SG109582A1 (en) |
| TW (1) | TWI243409B (en) |
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| CN1996145B (en) * | 2005-12-31 | 2010-08-25 | 上海集成电路研发中心有限公司 | Method for reducing water pollution of optical elements in immersion type photoengraving technology |
| US7903232B2 (en) * | 2006-04-12 | 2011-03-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
| CN1573567A (en) * | 2003-05-30 | 2005-02-02 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN2746425Y (en) * | 2003-08-25 | 2005-12-14 | 台湾积体电路制造股份有限公司 | Infiltration photoetching system |
-
2004
- 2004-08-17 TW TW93124633A patent/TWI243409B/en active
- 2004-08-23 SG SG200404744A patent/SG109582A1/en unknown
- 2004-08-25 CN CNB2004100568482A patent/CN100535753C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
| CN1573567A (en) * | 2003-05-30 | 2005-02-02 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN2746425Y (en) * | 2003-08-25 | 2005-12-14 | 台湾积体电路制造股份有限公司 | Infiltration photoetching system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1655061A (en) | 2005-08-17 |
| SG109582A1 (en) | 2005-03-30 |
| TWI243409B (en) | 2005-11-11 |
| TW200509214A (en) | 2005-03-01 |
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