CN100526052C - Imprint lithography with improved monitoring and control and apparatus therefor - Google Patents

Imprint lithography with improved monitoring and control and apparatus therefor Download PDF

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Publication number
CN100526052C
CN100526052C CNB200480022853XA CN200480022853A CN100526052C CN 100526052 C CN100526052 C CN 100526052C CN B200480022853X A CNB200480022853X A CN B200480022853XA CN 200480022853 A CN200480022853 A CN 200480022853A CN 100526052 C CN100526052 C CN 100526052C
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mould
radiation
parameter
resolution chart
imprint
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CN1832846A (en
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斯蒂芬·Y·舒
余兆宁
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Office of Technology and Trademark Licensing of Princeton University
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Office of Technology and Trademark Licensing of Princeton University
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Abstract

A process of measuring or monitoring at least one parameter in an imprint lithography process includes the steps of providing a mold having a surface to imprint a test pattern (Block A), imprinting the test pattern on the moldable surface (Block B), illuminating the test pattern (Block C), measuring a component of the scattered, reflected or transmitted radiation to monitor a parameter of the imprinting (Block D) and, optionally, using the measured radiation component to control a process parameter (Block E).

Description

Imprint lithography and equipment thereof with improved monitoring and control
Cross
The application requires U.S. Provisional Application sequence number No.60/477,161 priority, this provisional application is applied on June 9th, 2003 that by Stephen Y.Chou and Zhaoning Yu title is " Method and Apparatus for Monitoring and Controlling ofImprinting Processes and Materials ".This paper quotes this 161 provisional application, and is for reference.
Technical field
The present invention relates to imprint lithography, imprint lithography is stamped on the surface of the work of moldable surface die drawing by the mold pressing surface is pressed into moldable surface.Say that more specifically the present invention relates to a kind of method and apparatus that is used to monitor and control imprint lithography, this imprint lithography has the lines of micro-dimension or nano-scale particularly useful to impression.
Background technology
Form the method for small features on substrate, device many electronics, magnetic to making, machinery and optics, and bioanalysis and chemico-analytic device are crucial.This kind method for example can be used for defining the lines and the structure of microcircuit, and the structure of planar optical waveguide and relevant Optical devices and work lines.
Optical lithography is the conventional method that forms this lines.Be coated with last layer photoresist thin layer at substrate surface, and the part of selecting in the photoresist is exposed in the figure of light.Then,, expose the figure that needs on the substrate that has exposed, supply further to handle, for example etch processes photoresist developing.The difficult point of optical lithography processing procedure is, resolution ratio is subjected to the scattering in optical wavelength, photoresist and the substrate and the restriction of photoresist thickness and character.Therefore, along with the lines size of needs becomes littler, make the optical lithography difficulty more that becomes.Also have, the coating of photoresist, development and remove are steps relatively slowly, have limited the speed of producing.
And imprint lithography, the principle according to different basically can provide high resolution ratio, high production capacity, low cost and the big area that may cover.In imprint lithography, the mould of baguette is arranged, be pressed on the workpiece of moldable surface (for example being coated with the substrate of photoresist).Lines on the mould make the warpage of plastic photoresist film, make the lines distortion of the shape of film according to mould, and form the figure of protuberance on the film surface.After mould is removed, handle the film that has formed figure, remove the part of attenuation.This is removed step and exposes following substrate, for further handling.Use mechanical pressure to implement to press down step, this impression can with the uniformity of height, impress the following lines of 25 nanometers on the area of 12 square inches of magnitudes.About more details, see the U.S. Patent No. 5,772,905 that on June 30th, 1998 was presented to Stephen Y.Chou, this paper quotes this patent, and is for reference.
If the tolerance problem that high-accuracy mechanical pressure proposes can overcome, then can realize even more high-resolution, more large-area imprint lithography.This problem can enough forward hydraulic pressure, die surface is pressurizeed with moldable surface solve.Because hydraulic pressure is isobaric, in pressurization steps, there is not obvious unbalanced side force.About more details, be presented on November 19th, 2002 in the U.S. Patent No. 6,482,742 of Stephen Y.Chou and illustrate, the title of this patent is " Fluid Pressure Imprint Lithography ", this paper quotes this patent, and is for reference.The respond well equipment that is used for the hydraulic pressure imprint lithography, the u.s. patent application serial number No.10/637 that applied on August 8th, 2003 people such as Stephen Chou, explanation in 838, this paper quotes this application, and is for reference.
Can also directly be pressed into substrate surface to mould and realize imprint lithography, it is the workpiece of moldable surface that substrate surface will be provided for this reason.For example, moldable surface can be the material of a constituent apparatus part, such as the dielectric material of organic light-emitting material, organic conductive material, insulator or low K.As another example, the figure of the enough nano-scales of the workpiece of silicon energy directly impresses.Mold pressing surface next-door neighbour wants the silicon face of mold pressing to place.With laser emission irradiation silicon face, make the softening or liquefaction of silicon, be pressed into the mold pressing surface softening or liquefied surface then.About more details, see the disclosed patent application serial number No.2004/0046288 of the U.S., apply on March 17th, 2003 that title is " Laser Assisted Direct ImprintLithography " by Stephen Chou, this paper quotes this application, and is for reference.
Because the potential high speed of imprint lithography, the ability that high-resolution is made a large amount of staple products, thus be necessary to monitor and study processing procedure, the optimization process of imprint lithography parameter, optimize material composition and control processing procedure in real time.The invention provides a kind of respond well method that reaches this monitoring, optimization and control.
Summary of the invention
According to the present invention, be in die drawing is stamped in method on the surface of the work, monitor or measure at least one parameter.Monitoring or the enforcement of measuring, be by: a) provide the mould on mold pressing surface, the structure on this mold pressing surface can impress measuring resolution chart at least; B), resolution chart is stamped on the moldable surface by the mold pressing surface is pressed into moldable surface; C) at least during part impression, use the radiation irradiation resolution chart, and monitoring or measure at least one component from the radiation of resolution chart scattering, reflection or transmission, with monitoring or measure at least one parameter that impresses.Imprint step generally includes: the mould near workpiece, place with mold pressing surface next-door neighbour's moldable surface of mould; The mold pressing surface is pressed into moldable surface; With the mold pressing surface is separated with moldable surface, make the imprinted pattern on mold pressing surface stay moldable surface.In many cases, pressurization can be implemented by the heating moldable surface, and the maintenance of imprinted pattern can or be solidified by the surfacing cooling that makes distortion.In addition, the control of processing procedure, can by detect radial component, from the signal that detects produce feedback control signal, this feedback control signal is controlled imprint process in real time at last.The present invention also comprises respond well equipment, uses for above-mentioned monitoring, measurement and control imprint lithography method.
Description of drawings
In conjunction with this paper and constitute the accompanying drawing of a specification part, show one or more embodiment of the present invention, and, be used to explain principle of the present invention with explanation.Accompanying drawing only is used to illustrate the purpose of the one or more preferred embodiments of the present invention, is not regarded as limiting of the invention.
In the accompanying drawing:
The different phase that imprint process and material are drawn in Figure 1A to 1E signal, these different phases are that the meterological method that the present invention illustrates need be monitored.
Fig. 2 signal is drawn according to the measurement device of one embodiment of the invention.
Fig. 3 draws according to the measured structure of example embodiment of the present invention.
Fig. 4 is the SEM picture of exemplary resolution chart, uses this resolution chart on the mould of example embodiment of the present invention.
Fig. 5 is according to example embodiment of the present invention, the sketch of the experimental layout of drawing.
Fig. 6 shows the measurement data that obtains with experiment shown in Figure 5.
Fig. 7 is according to example embodiment of the present invention, the schematic block diagram of the meterological apparatus that draws.
Fig. 8 is according to example embodiment of the present invention, the schematic block diagram of the treatment system of drawing.
Fig. 9 is a curve map, shows the measurement data with the layout acquisition of Fig. 5.Show on the figure that treatment temperature is goed deep into the influence of photoresist speed to mould.
Figure 10 represents the measurement data that the layout of usefulness Fig. 5 obtains with curve.Show on the figure that processing pressure is goed deep into the influence of photoresist speed to mould.
Figure 11 represents the measurement data that the layout of usefulness Fig. 5 obtains with curve.Show on the figure that pre-embossed photoresist baking condition gos deep into the influence of photoresist speed to mould.
Figure 12 represents the measurement data that the layout of usefulness Fig. 5 obtains with curve.Show on the figure that different initial photoetching film thickness gos deep into the influence of photoresist speed to mould.
Figure 13 A draws by the layout of Fig. 5, the influence (simulation) of different photoresist refractive indexes to measuring.Data are calculated with scalar diffraction theory.
Figure 13 B draws with the measurement data of acquisition embodiment illustrated in fig. 5.The influence of the photoresist refractive index of drawing on the figure to measuring.
Figure 14 draws with the measurement data of the layout acquisition of Fig. 5.Show on the figure that the difference of mold features (being live width in this example) is goed deep into the influence of photoresist (different initial film thickness is arranged) speed to mould.
Figure 15 draws with the measurement data of the layout acquisition of Fig. 5.Show the application of the present invention in imprint process control on the figure; With
Figure 16 is a schematic block diagram, draws according to the present invention's monitoring or the related step of control imprint lithography.
The specific embodiment
The present invention relates to monitor and/or control the processing procedure of imprint lithography and the method for material.By measuring and analyze by the radiation of one group of microcosmic test features scattering relevant with impression, can be at the scene or external pelivimetry or detect the parameter of impression and the character of material at the scene, and can produce and feed back or control signal, control imprint process and result thereof.The present invention is also at the method and apparatus of external monitor imprint process and material at the scene or at the scene.
These methods comprise:
1) provide a kind of mould, have the lines of one group of test surfaces protuberance above at least, the lines of this test surfaces protuberance can comprise grating, two-dimensional array, have irregular or define the structure or the three-dimensional structure of shape arbitrarily;
2) during imprint process, shine the figure of this test surfaces protuberance with radiation (monochromatic or wide band in wavelength spectrum), imprint process generally includes: mould take to figure to be formed the workpiece neighbour, mould is pressed into the film that is coated on the surface of the work, film is changed into non-viscous state (or opposite) and mould is separated with photoresist from viscous state.In some cases, need align existing figure on workpiece or the substrate with new figure to be printed.In this case, need before the imprint step figure on the mould is aimed at existing figure.Radiation can be light (visible, the x ray, ultraviolet or infrared), electron beam or ion beam.For the sake of simplicity, in whole explanations of the present invention, use term light, but should recognize that it comprises other forms of radiation;
3) measurement is perhaps measured by the light of irradiated test structure with plastic material transmission (is relative transparent situation with substrate to this radiation at mould) from the light of irradiated test structure and plastic material scattering;
4) from the relevant imprint process of information extraction of measurement and the parameter of material.Extraction can be real-time (at the scene) or off line (outer at the scene).
5) information of Chou Quing can produce the signal that is used to control imprint process and material purpose by mode at the scene.
6) and/or with the information that extracts, research different parameters and material are to the influence of imprint process.
Equipment based on this method comprises:
1) but the meterological apparatus of independent utility, this apparatus is according to the relevant imprint process that extracts and the information of material.
2) treatment system comprises: the controller of impression apparatus, meterological apparatus and processing procedure and material.The impression apparatus is fit to implement imprint lithography according to operation factors.The meterological apparatus is fit to radiation (generally being light) irradiation mould and substrate, and measures the radiation of scattering or transmission, so that extract the information of relevant imprint process and material.The controller of imprint process and material, the data according to the meterological apparatus obtains produce signal, adjust one or more operating parameters in real time.
With reference now to accompanying drawing,, Figure 16 is a block diagram, illustrates to show in the imprint lithography on the workpiece of moldable surface is arranged monitoring or the related step of control of measuring and choosing wantonly.First step shown in the square frame A provides the mould on mold pressing surface, and this mold pressing surface is used for impression for measuring resolution chart.
Figure 1A draws the mould 10 of resolution chart on it, and resolution chart comprises many raised line 16 that need shape that have the workpiece neighbour, and plastic surface is arranged on the workpiece.Workpiece comprises the substrate 14 of the moldable film layer 12 that carrying is thin.Arrow 20 is pointed out the direction of motion of mould with respect to substrate.
Next step (the square frame B of Figure 16) is that moldable surface is impressed.This step generally includes the mould near workpiece, places with mold pressing surface next-door neighbour's moldable surface of mould; The mold pressing surface is pressed into moldable surface; With the mold pressing surface is separated with moldable surface, make the imprinted pattern on mold pressing surface stay moldable surface.Pressurization can be by the U.S. Patent No. 5 as illustrating in front, 772,905 is described, realize with high accuracy mechanical pressure, also can by as in U.S. Patent No. 6,482,742 is described, realize with hydraulic pressure, perhaps use electrostatic force or magnetic force to realize: the heating moldable surface helps pressurization steps, and the cooling moldable surface helps the figure that maintenance has impressed in moldable surface.Moldable thin film can be a photo-curing material, and it is liquid before photocuring or is in the deformable state.If it is plastic that the surface that backing material provides is that plastic maybe can making it becomes, for example silicon face can be softening by laser, and then moldable film 12 can be saved.See before and state the disclosed patent application serial number No.2004/0046288 of the U.S..Moldable surface can be the plastic material of a moldable film or a constituent apparatus part.This plastic material example comprises semiconductor, insulator, metal, inorganic material, organic material and light-emitting material.
Figure 1B draws and is pulled to the mould 10 that contacts with the thin moldable film layer 12 of substrate 14 carryings.Thin moldable film layer 12 can comprise the synthetic of thermoplastic synthetic, curable synthetic or other plastic materials.Thin moldable film layer 12 preferably can such as the variation of temperature, polymerisation, curing or irradiation, change or chemical reaction by physics according to the variation of condition, carries out the transition to non-viscous state or opposite from viscous state.Preferably, thin moldable film layer 12 is pulled to before or after mould 10 contacts at it, is in viscous state.
Fig. 1 C and 1D draw and are used to be pressed into the lines 16 of thin moldable film layer 12 on the mould 10.After lines 16 have been pressed into the degree of depth that thin moldable film layer 12 needs (Fig. 1 D), for example by cooling or solidify, after allowing or causing changing into non-viscous state, in this non-viscous state, remove mould at the film that is stamped.
Fig. 1 E shows the mould 10 that breaks away from thin moldable film layer 12.Mould leaves along arrow 22 indicated directions, stays the lines 17 that impressed in film 12.Test features 17 is generally comply with the shape of the lines that cave on the mould.
Return with reference to the third step shown in Figure 16 square frame C, this step appears at some part during the imprint process, and usually occurs in pressurization steps, and this third step is at least a portion with radiation (normally light) irradiation resolution chart.Using transparent relatively mould and/or transparent relatively substrate, for example use vitreous silica, is favourable to irradiation.Common situation is that the test features that is stamped forms test gratings figure in photoresist.Using up when irradiation, grating makes light scattering, reflection or transmission, thereby provides the information about imprint process in mode that can be analyzed.By analyzing, this method provides metrological method for measuring and the research imprint lithography.Therefore, in the step of square frame D, use at least one component of scattering or transmitted radiation, monitor, measure or study at least one parameter of photoetching impression.
Next step shown in the square frame E is from measuring and research, advancing to the control real-time or off line of imprint lithography.In this step, measure or analyze the radiation of scattering, reflection or transmission, produce the feedback signal of control impression.Measure and analyze at least one component of the radiation of scattering or transmission, so that at least one parameter of control impression.Respond well way is to use one or more components, the feedback signal of a plurality of parameters of generation control impression.
Fig. 2 signal is drawn and is measured the meterological method of imprint parameters and material character.Use from the radiation beam 34 (as light beam, electron beam or ion beam) of radiation source 30 as probe, at least a portion of illumination module 18, this assembly 18 comprise mould 10, thin moldable film layer 12 (it also can have the multilevel resist structure) and substrate 14 (it can be flat substrate or the substrate or the structure of carrying figure).For the sake of simplicity, all use term " light source " or " light " in the explanation, but should recognize that it comprises other forms of radiation source.
The light that detects and analyze generally includes component 36 (so-called " mirroring " component), transmitted component 38 and the scattering component 40 (40a, 40b and 40c) of reflection.For the purpose of simplifying discussion, term " scattering " light is contained all these components, unless otherwise indicated.Detector 32 carries out optical measurement, such as the measurement of intensity, phase place or the polarization of one or more scattering components.
Light source 30 can use other combinations of monochromatic basically light, white light (broadband) or some wavelength.Can use the light of any polarization or any polarization and unpolarized combination.Can use any incidence angle irradiation.Use also can be used the light beam irradiates assembly from substrate 14 1 sides from the light beam irradiates assembly 18 of mould 10 1 sides though Fig. 2 draws.Light source can with can coalescence the light beam of orientation, also can be with the angle pencil of ray of non-convergence.Useful optical wavelength range, from 1nm to 100 μ m.Useful electron beam wavelength ranges, from 0.001nm to 10 μ m.And useful ion beam wavelength ranges, from 0.00001nm to 10 μ m.The size of the lines that are detected (these lines can on the mould), width on the substrate or in photoresist usually from 0.1nm to 500 μ m, the degree of depth usually from 0.1nm to 100 μ m.
Scattered light character (profile) (being its angle distribution, intensity, phase place and polarization) depends on: the 1) character of incident light 34 (being its incidence angle, intensity, wavelength, phase place and polarization); 2) material and the composition of mould 10, thin moldable film layer 12 and substrate 14; 3) feature of figure in figure on the mould 10 and the irradiated thin moldable film layer 12 (be shape, highly, mold features clamp-ons the degree of depth, arrangement and the relative orientation of photoresist).
Rely on the character of measuring and analyzing scattered light, can extract about the parameter of imprint process and the information of material.These parameters include, but are not limited to: the degree of clamp-oning of mold features in the photoresist; Mould is with respect to the movement velocity of substrate; Gap between mould and the photoresist film; Gap between mould and the substrate; The photoresist film situation that comprises the viscosity and the degree of polymerization; The depth of parallelism between mould and the substrate; The relative orientation of mould and substrate; Registration accuracy on mold features that before pre-treatment obtains and the substrate between the lines; With mould, substrate, and the variation of photoresist shape.The photoresist situation that can measure comprises: stress, distortion, composition, viscosity, flowing velocity, flow direction, phase transformation, the degree of polymerization, crosslinked polymer degree, firmness change and optical property change.
Above-mentioned measurement can be implemented in real time and at the scene, also can off line and outer at the scene enforcement.From the information that above-mentioned measurement is extracted, can be used at the scene or at the scene, analyze and control impression apparatus, imprint process and impression materials.
Identify the information that obtains from above-mentioned quality at the scene, can be used in the various parameters of real-time control, such as local between the variation of the relative position between mould and the substrate (x, y, z, θ, stretch and vacillate now to the left, now to the right-all 6 possible frees degree), speed of imprint, impression pressure, imprint temperature, mould and substrate and the mould and comprehensively aim at.
Can revise the above-mentioned meterological apparatus of the present invention, to adapt to specific embodiment.For example, the lines of testing on can designing mould to strengthen scattered intensity in the particular diffraction order, are optimized the measurement of special parameter, such as the degree of clamp-oning of mould in the photoresist.
Fig. 3 draws to Fig. 6 and detects the embodiment of mould degree of clamp-oning in the photoresist.
The draw object lesson of the assembly that is detected light 34 irradiation of Fig. 3.Mould 10 is transparent moulds, makes polished backside by the vitreous silica substrate that 0.5mm is thick.Test features is one group of grating primitive, cycle 1 μ m, live width 650nm.The about 400nm of the degree of depth of resolution chart.Thin moldable film layer 12 is thermoplastic polymers, has initial film thickness 60 and refractive index n r=1.46, and photoresist can change viscous state on the temperature that raises.Substrate 14 is a silicon.Fig. 4 is a SEM picture of preparing the test gratings figure of impression on the mould.
Fig. 5 draws and measures the sketch of layout.Use He-Ne laser instrument 30 to make light source.The wavelength of detecting light beam 34 is 632.8nm, and is parallel to plane of incidence polarization (detecting light beam also can be perpendicular to plane of incidence polarization, perhaps can significantly not change the result of present embodiment with other polarization state).In this layout, adopt 30 ° incidence angle 80.Can adopt other incidence angle.
During operation, mould 10 is contacted with the thin moldable film layer 12 of substrate 14 carryings.Grating is adjusted to and is parallel to plane of incidence, uses the detecting light beam that comes from mould one side, illumination module 18.Grating also can be adjusted to other directions with respect to plane of incidence.
During the entire process process, with hydraulic pressure mould is pressed on the substrate from the outside.Heating component 18, the temperature of rising can change photoresist into viscous state.
Because resolution chart is periodic line array (diffraction grating), irradiation causes many " level " light beam from grating scattering.In this layout, three order diffraction levels are arranged usually, comprise zero level 30 (also claiming " mirroring " level) and 1 grade of light beam 40a of two-stage.
The relative intensity of the order of diffraction depends on test gratings on the mould strongly to the degree of clamp-oning of photoresist.When mold features is pressed into photoresist film, the photoresist material that makes groove between the grid stroke be refracted the rate approximate match is filled, and the intensity of 1 order diffraction level will descend.
In the present embodiment, measure the intensity of 1 grade of light beam with a photoelectric detector 32.The time-resolved data that obtain from this is measured are represented with the curve of Fig. 6.This curve has proved the sensitivity of this meterological method and has differentiated the ability of imprint process different phase.
Begin in processing procedure, the intensity that 1 order diffraction is high relatively shows, though mould (during the entire process process, applies 80 pounds/inch under ambient pressure 2Constant pressure), contact with photoresist film, but in the incipient stage, mold features is not pressed into photoresist.The reduction of diffracted intensity afterwards shows, along with photoresist is heated softeningly, mould is pressed into photoresist.Finish in processing procedure, 1 order diffraction intensity near zero shows that mold features is pressed into photoresist fully, and the groove between the grid stroke, is refracted the rate matched materials and fills.
This example explanation, meterological method of the present invention can be with at the scene or outer at the scene mode, monitoring and research imprint process.To the key message (such as the detection of degree of clamp-oning, beginning and the end point of mould in photoresist and the speed of processing procedure) of impression, can from measure, release.
But Fig. 7 is the simplified block diagram of the equipment 200 (meterological apparatus) of independent utility, and this equipment can be according to the present invention, the processing procedure and the material of monitoring impression.This meterological apparatus 200 comprises: 1) illuminator 100, are used to produce a branch of or multi beam detecting light beam 34; 2) optical hardware 120, are used for detecting and measuring scattered light; With 3) data analysis system 140, be used to handle the data that optical hardware is collected, and the output of form on demand result.
Fig. 8 is the simplified block diagram of treatment system, is used for according to the invention process imprint lithography.This treatment system comprises: 1) impression apparatus 100 is used to implement imprint lithography.Apparatus is handled the parameter (as: in all dimensions the position of mould, pressure and impression duration are aimed at, impresss to position, the mould of substrate with the coincidence between the substrate in all dimensions) of factor can be by default outside input, or by the real-time mode change with control; 2) meterological apparatus 200 as shown in Figure 7; With 3) processing controller 300, can receive and analyze the data that meterological apparatus 200 sends, produce real-time control signal.
The embodiment that Fig. 9 to 15 draws Fig. 3 to 6 is drawn, some in the quality of imprint process and photoresist character is identified are used, and the application in the control of imprint process.
Fig. 9 draws experimentally about the measurement result of treatment temperature to the speed of imprint influence.In each situation, same photoresist (NP-46) has the initial film thickness 60 of same 210nm.All impressions are all pressed 80 pounds/inch 2Uniform pressure but different treatment temperature (30,40,50,60,70,80,100 and 120 ℃) implement.Data show that treatment temperature is clamp-oned speed to mould appreciable impact.During low temperature (30 and 40 ℃), photoresist is still firm, only has applied pressure can not make the photoresist distortion.When higher temperature, photoresist is softening, and mould can be pressed in the photoresist with the speed that increases simultaneously.Data also show, the meterological method of the present invention's explanation to detecting that speed of imprint as the variations in temperature result changes and the variation of photoresist state (from solid-state to soft state), has sufficiently high sensitivity.
Figure 10 draws experimentally about the measurement result of processing pressure to the speed of imprint influence.In two kinds of situations, photoresist (NP-46) has the initial film thickness 60 of identical 210nm.Twice impression is 60 ℃ same treatment temperature but different processing pressure (80 and 100psi) is implemented down.Figure 10 draws at 100 pounds/inch 2The time, impress lower 80 pounds/inch of used time ratio 2Pressure is shorter.Data also show, the meterological method of this paper explanation changes the speed of imprint of indication as the pressure result of variations, and sufficiently high sensitivity is arranged.
Figure 11 relevant pre-embossed photoresist baking condition that draws experimentally is to speed of imprint and to the measurement result of photoresist property effect.In each situation, photoresist (NP-46) film has the initial film thickness 60 of identical 210nm.All impressions all are at 70 ℃ and 80 pounds/inch 2Following enforcement.Before the impression, film is with identical 90 ℃ of temperature but different duration bakings.A sample does not toast before rotation coating back and impression; Other three samples toasted respectively 15,30 and 60 minutes.Photoresist is because baking, discharges the solvent in the film of rotation coating, so the baking result changes character (the glass transition temperature T for example of photoresist slightly g).Figure 11 shows that stoving time is long more, and it is also long more that mould is pressed into the time that needs fully.Figure 11 shows that also the meterological method of the present invention's explanation can detect the influence of baking to photoresist character.
The draw influence of the thick 60 pairs of speed of imprint of initial photoresist film of Figure 12.All impressions all are at 60 ℃ and 80 pounds/inch 2Following enforcement.Photoresist (NP-46) film has different original depth (200,400 and 600nm).Before the impression, they all toasted 24 hours down at 90 ℃.To thicker film, have more photoresist to can be used for filling " space " in the die drawing, and " seam " between mould and the substrate will become bigger, make the easier space that flows in the die drawing of photoresist.The result is, increases initial film thickness 60, helps to improve the speed of processing procedure.The meterological method that this effect can easily illustrate with this paper detects.
Figure 13 A and 13B are respectively curves simulation and experiment, and the bright photoresist refractive index of these curve tables is related with imprint test results.When using the photoresist of different refractivity in the impression, refractive index can influence the feature of measurement.Mould is deeply than (R p) be defined as the ratio of the photoresist height 76 that puts in the mould groove and mould gash depth 74.During impressing, mould is deeply than being increased to 1 from 0.When beginning impression do not have photoresist to put in the groove of mould, so deeply than being 0; When impression finished, groove was filled by photoresist fully, so deeply than being 1.
Figure 13 A is the photoresist to two kinds of different refractivities (1.46 and 1.58), with the analog result that the scalar diffraction model calculates, draws on the figure as mould deeply than 1 order diffraction intensity (normalization) of the simulation of function.When the photoresist refractive index n rWith the mould refractive index n mMate (n fully r=n m=1.46, shown in the solid line among Figure 13 A) time, diffracted intensity is with the R that increases pDescend continuously, and when impression finishes, arrive 0.But, work as n rWith n mBetween when not matching, finish (R with impression p=1.0) final value of Dui Ying diffracted intensity is usually high than zero.For example, we as calculated at n r=1.58 situation (dotted line among Figure 13 A), this refractive index are significantly higher than refractive index (vitreous silica, the n of mould m=1.46).In this case, when the groove of mould by partially filled (R p～0.8) time, diffracted intensity reaches zero, but works as R pDuring near its final value 1.0, diffracted intensity slightly increases towards terminal point.
Figure 13 B shows during imprint process the photoresist of two kinds of different refractivities, experimentally the 1 order diffraction intensity as the function of time of Ce Lianging.In these experiments, use same grating mould shown in Figure 4.Use thermoplastic polymer's photoresist of two types: the refractive index n of No.1 polymer r=1.46; The refractive index n of No.2 polymer r=1.58 (determining) with ellipsometer.In two kinds of experiments, the original depth 60 of thin polymer film has identical～210nm.Because their difference on glass transition temperature so two kinds of photoresists make two kinds of imprint process under the situation with different condition impressions, have the comparable duration in time.The No.1 polymer is at 100 pounds/inch 2With 60 ℃ of temperatures seals, and the No.2 polymer is at 80 pounds/inch 2With 80 ℃ of temperatures seals.Data show, work as n rWith n mDuring coupling, diffracted intensity drops to zero (No.1 polymer, solid line among Figure 13 B) when impression finishes.But, work as n rCompare n mWhen high, before the groove of mould was by complete filling, diffracted intensity arrived zero, and when impression finished, diffracted intensity was near the end value (No.2 polymer, dotted line among Figure 13 B) of non-zero.Experiment is consistent with the analog result that scalar diffraction model shown in Figure 13 A provides.
The meterological method that has illustrated can also be used to detect the influence of die drawing lines to impression.Such example is by data declaration shown in Figure 14.In this experiment, two figure degree of depth 74 that identical 1.0 μ m cycles 70 and 330nm are arranged, but the mould of different figure live widths 72 is arranged are used to test and relatively.A mould (" narrow ") has～live width 72 of 330nm, and another (" wide ") has～live width 72 of 660nm.Figure 14 A draws with these two moulds, to have～photoresist of 220nm original depth 60 implements the experimental result of impression.Figure 14 B draws with these two moulds, to have～photoresist of 350nm original depth 60 implements the experimental result of impression.In each situation, different die drawings produces visibly different impression curve.Figure 14 A and Figure 14 B show that this meterological method can be used for detecting the influence of die drawing test features (in this example, being different live widths) to impression.This meterological method can be used to study the influence of other resolution chart lines (such as the size of figure, the degree of depth, density, distribution, the graphics figure of figure to opening wide to one dimension figure and sealing) to impression and photoresist flow process equally.
By the application of this metering method, now can be at the scene and detect the deep degree of depth of mould in real time.For this reason, available treatment system is as shown in Figure 8 carried out more accurate control to imprint process.For example, can control the speed of imprint process and the degree of clamp-oning of mould now.At Figure 15, exert pressure at lower temperature (～30 ℃) during beginning.Under this low temperature, it is low that mould is clamp-oned speed.Be to increase temperature (to～80 ℃) subsequently.Photoresist is softening, and mould is clamp-oned speed to be increased.Figure 15 shows, this meterological method by detecting the influence of the treatment conditions variation that occurs in the imprint process, can provide the control of imprint process at the scene.When die drawing only need partly be pressed into the degree of depth of photoresist needs, this meterological method also provided the possibility that stops imprint process, thereby realized specifying the possibility of going deep into the degree of depth 76.
Should be pointed out that method of the present invention can use various widely resolution charts, comprise one dimension or bidimensional periodic array, these arrays comprise the enough little cycle, make to have only first-order diffraction basically.Resolution chart can also be a three-dimensional structure, or one group of aperiodic lines.
The radiation of illumination can be monochromatic substantially, can comprise the multi-wavelength, also can comprise multi-wavelength's combination.It can be polarization (linear polarization or elliptical polarization), can be random polarization, also can be unpolarized.Illumination can also can be shone from a plurality of light sources by the incidence angle scanning that changes by being fixed into the firing angle irradiation.
This processing procedure can be used for the various widely imprint process parameters of monitoring respond wellly, comprising: the glass transition temperature on the viscosity of the movement velocity of the clamp-oning of mould, the relative substrate of mould or workpiece, moldable surface, surface, surfacing are to the compliance of lines on the mould, the curing rate of surfacing and the curing degree of surfacing in the photoresist.This processing procedure can also provide the measurement of surfacing flow rate, and by the surfacing of stress sensitive, can provide the measurement of surfacing stress.This processing procedure points out that mould with respect to the displacement of substrate, the mould depth of parallelism with respect to substrate, can also provide imprint process inhomogeneity measurement.
The test features of mould can be a commaterial with mold, perhaps can be made of different materials, and moldable surface can be the material the same with substrate, material or the composite bed different with substrate, as multilevel resist.
Workpiece can carry one or more string diagrams, and these string diagrams are preformed as the function lines, or preformed as test features, and these lines can use in conjunction with the mould resolution chart.For more accurate or provide the monitoring of multiple parameter, mould can be included in the multiple resolution chart lines of impression on the workpiece.Measurement can be static state or time-resolved.
Though with reference to preferred embodiment explanation the present invention, the one skilled in the art should be understood that, without departing from the spirit and scope of the present invention down, can make change in the form and details to the present invention.

Claims (39)

  1. One kind in the method that the surface of the workpiece that moldable surface is arranged impresses, monitor or measure the method for at least one parameter of this method, the step that this method comprises has:
    Provide the mould on mold pressing surface, be used to impress one group of lines, comprising supplying measuring resolution chart;
    Moldable surface is impressed, comprise the step that the mold pressing surface is pressed into moldable surface;
    At least during a part of imprint step, use the radiation irradiation resolution chart;
    Monitoring or measurement are from least one component of the radiation of resolution chart scattering, reflection or transmission, with at least one parameter of monitoring or measurement impression.
  2. 2. the periodic array that comprises one dimension or bidimensional according to the resolution chart that the process of claim 1 wherein.
  3. 3. according to the method for claim 2, wherein the cycle of array sufficiently little so that its diffraction has only first-order diffraction.
  4. 4. comprise three-dimensional structure according to the resolution chart that the process of claim 1 wherein.
  5. 5. comprise one group of acyclic lines according to the resolution chart that the process of claim 1 wherein.
  6. 6. be monochromatic according to the radiation that the process of claim 1 wherein.
  7. 7. comprise multi-wavelength or the light that makes up by the multi-wavelength according to the radiation that the process of claim 1 wherein.
  8. 8. comprise linearly polarized light according to the radiation that the process of claim 1 wherein.
  9. 9. comprise elliptically polarized light according to the radiation that the process of claim 1 wherein.
  10. 10. comprise non-polarized light or random polarization according to the radiation that the process of claim 1 wherein.
  11. 11. according to the process of claim 1 wherein that the incidence angle of the radiation that is used to shine fixes.
  12. 12. according to the process of claim 1 wherein that the incidence angle of the radiation that is used to shine changes.
  13. 13. comprise light from scanning light source or a plurality of light sources according to the radiation that the process of claim 1 wherein.
  14. 14., comprise the intensity of radiation according to the process of claim 1 wherein at least one component of radiation.
  15. 15., comprise the phase place of radiation according to the process of claim 1 wherein at least one component of radiation.
  16. 16., be the degree of clamp-oning of mould in the photoresist according to the process of claim 1 wherein at least one parameter that impresses.
  17. 17., be the movement velocity of mould with respect to substrate according to the process of claim 1 wherein at least one parameter that impresses.
  18. 18. method according to claim 1, Ya Yin at least one parameter wherein, be selected from as next group parameter, comprise: the glass transition temperature on the viscosity on surface, surface, surfacing are to the degree of complying with of lines on the mould, the curing rate of surfacing and the curing degree of surfacing.
  19. 19., be the flow rate of surfacing according to the process of claim 1 wherein at least one parameter that impresses.
  20. 20. according to the method for claim 18, surfacing wherein is the stress sensitive material, and at least one parameter that wherein impresses, and is the stress of surfacing.
  21. 21., be the displacement of mould with respect to substrate according to the process of claim 1 wherein at least one parameter that impresses.
  22. 22., be the depth of parallelism of mould with respect to substrate according to the process of claim 1 wherein at least one parameter that impresses.
  23. 23., be the uniformity of imprint process according to the process of claim 1 wherein at least one parameter that impresses.
  24. 24., be to be produced in the material different with the material of forming mould according to the process of claim 1 wherein the resolution chart of mould.
  25. 25., comprise the photoresist of multilayer according to the moldable surface that the process of claim 1 wherein.
  26. 26. be loaded with one or more figure according to the workpiece that the process of claim 1 wherein, these figure can combine with the lines on the mould, are used to the purpose of monitoring and measuring.
  27. 27., comprise the measuring resolution chart of a plurality of confessions according to the process of claim 1 wherein the mold pressing surface.
  28. 28. according to the measurement that the process of claim 1 wherein is static measurement.
  29. 29. according to the measurement that the process of claim 1 wherein is time-resolved measurement.
  30. 30. a meterological apparatus is used for the method that impresses at the surface of the work that moldable surface and one group of lines are arranged, monitors or measure at least one parameter of this method, these group lines comprise that this apparatus comprises for measuring resolution chart:
    Illuminator, this illuminator are at least during a part of imprint step, with radiation irradiation at least a portion resolution chart;
    Radiation detection system is used for monitoring or measure from least one component of radiation of resolution chart scattering, reflection or the transmission of irradiation; With
    Data analysis system is used for the radial component of analyzing and testing, with the measurement of at least one parameter that method for stamping is provided.
  31. 31. a lithographic apparatus comprises:
    The impression apparatus is used for the surface of the work that moldable surface and one group of lines are arranged is impressed, and wherein these group lines comprise for measuring resolution chart;
    The described meterological apparatus of claim 30; With
    Processing controller is used to analyze the output of meterological apparatus, and produces output signal, with control impression apparatus.
  32. 32. according to the lithographic apparatus of claim 31, have the double duty lighting unit, this double duty lighting unit provides the radiation on the meterological and the radiation that changes moldable surface character is provided.
  33. 33. an imprint lithography method is used for that the surface of the work of moldable surface is being arranged, impressing mould figure, and the step that this method comprises has:
    Provide the mould on mold pressing surface, so that impress one group of lines, these group of lines comprises for measuring resolution chart;
    Mould near workpiece is placed in the mode of mold pressing surface next-door neighbour's moldable surface;
    The mold pressing surface is pressed into moldable surface; With
    The mold pressing surface is separated with moldable surface, makes the imprinted pattern on mold pressing surface stay moldable surface,
    Wherein, at least during a part of pressurization steps,, and measure and analyze from least one component of the radiation of resolution chart scattering, reflection or the transmission of irradiation, with at least one parameter of control imprint process with radiation irradiation at least a portion resolution chart.
  34. 34. according to the method for claim 33, pressurization wherein produces by mechanical pressure.
  35. 35. according to the method for claim 33, pressurization wherein produces by hydraulic pressure.
  36. 36. according to the method for claim 33, pressurization wherein is that it is plastic that the surface is become by the radiation of laser instrument to the surface.
  37. 37. according to the method for claim 33, pressurization wherein produces with static or magnetic force.
  38. 38. according to the method for claim 33, at least one component wherein is used to produce feedback signal, uses at least one parameter of control imprint process.
  39. 39. method according to claim 33, at least one parameter in the imprint process wherein, be selected from as next group parameter, comprise: stacking between die location, the location of workpiece, mould and the workpiece aimed at, imprint temperature, impression pressure and impression duration.
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