CN100521177C - Optical device cavity structure, optical device, and method for manufacturing an optical device cavity structure - Google Patents

Optical device cavity structure, optical device, and method for manufacturing an optical device cavity structure Download PDF

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Publication number
CN100521177C
CN100521177C CN 200610071051 CN200610071051A CN100521177C CN 100521177 C CN100521177 C CN 100521177C CN 200610071051 CN200610071051 CN 200610071051 CN 200610071051 A CN200610071051 A CN 200610071051A CN 100521177 C CN100521177 C CN 100521177C
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China
Prior art keywords
mentioned
insulator layer
optics
film chamber
tectosome
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Expired - Fee Related
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CN 200610071051
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Chinese (zh)
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CN1848418A (en
Inventor
南尾匡纪
福田敏行
吉川则之
藤本博昭
国友美信
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Publication of CN1848418A publication Critical patent/CN1848418A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Abstract

The present invention provides a cavity structure for an optical device which can be manufactured without previously forming a separating groove, an optical device and a mathod for manufacturing the a optical device cavity structure. The cavity structure C1 for an optical device is provided with a first terminal 112 formed by alternately laminating insulating layers 11, 13, 15 and metallic layers 12, 18, 14, 16, formed on a mounting surface to be mounted on a wiring substrate, and electrically connected to a wiring board; a cavity 2 having a substantially rectangular opening 2a of the center on the top surface; and optically transmissive member placing portion 15a which is formed on the top surface surrounding the opening 2a, and on which an optical transmissive member 124 for transmitting a light received or emitted by an optical element chip 121 is placed.

Description

Optics film chamber tectosome and manufacture method and optics
Technical field
The present invention relates to a kind of optics film chamber (cavity) tectosome and manufacture method and optics.
Background technology
Up to now, known to the semiconductor device of optical system has been.The semiconductor device of optical system for example, is video tape recorder, digital camera, digital quietly resembles charge bonded element (CCD) assembly that be equipped with inside in the camera etc., usually, comprises optics and wiring substrate.Optics has optical element chip, light transmission member and the first terminal portion, and by the electrical connection of the first terminal portion and wiring substrate, optical element chip emits beam, and receives the light that sees through the light transmission member.
Yet, in the semiconductor device, except the optical system semiconductor device, also have high-frequency semiconductor device etc.For example, in the patent documentation 1, high-frequency signal amplifying device and manufacture method thereof have been disclosed.The manufacture method of the high-frequency signal amplifying device that this document disclosed is as follows.At first, one deck at least of plural dielectric layer is used for having formed on the surface dielectric layer of plural layer metal pattern, also has, and the dielectric MULTILAYER SUBSTRATE is constituted following form.Just, even if in any scope in the defined zone of a substrate surface of dielectric MULTILAYER SUBSTRATE, from the words of this substrate surface to the extension of substrate depth direction, before another surface that arrives the dielectric MULTILAYER SUBSTRATE, to arrive the plural layer metal pattern earlier or to be arranged on, constitute the dielectric MULTILAYER SUBSTRATE than this plural layer metal pattern form of the metal covering put of deep-seated more.Next, at the regional internal radiation laser of the defined of dielectric MULTILAYER SUBSTRATE.Thus, remove from the substrate surface of a side along depth direction existing dielectric layer till arriving metal pattern or metal covering, expose plural metal pattern and metal covering from the zone of defined.Next, at the regional semiconductor element mounted thereon of defined.Thus, between the part of plural metal pattern to the semiconductor element input high-frequency signal, the high-frequency signal that has amplified between another part output of plural metal pattern from semiconductor element.In such manufacture method, the manufacture method of semiconductor device that is pre-formed separating tank with manufacturing is different, does not need to predict the edge in the manufacturing, the high-frequency signal amplifying device of manufacturing, and the deficiency of both having supplied insulation also can realize miniaturization.
(patent documentation 1) patent application 2001-332656 communique
(inventing problem to be solved)
Generally speaking, in the high-frequency semiconductor device, use the resin-encapsulated semiconductor element.On the other hand, such as mentioned above in the semiconductor device of optical system, mostly be the situation of the optics of shelving light transmission member or lens barrel etc.So, the formation of the semiconductor device of optical system is different fully with the formation of high-frequency semiconductor device.Therefore, use the dielectric MULTILAYER SUBSTRATE of patent documentation 1 record to make in the situation of optical system semiconductor device, must on the dielectric MULTILAYER SUBSTRATE, implement to load and be provided with the method for optics.
Summary of the invention
The present invention invents in view of above-mentioned relevant issues point.Its purpose is to provide and is not pre-formed separating tank and when making, implemented for the optics of the method for loading and be provided with optics with film chamber tectosome, optics and optics manufacture method with film chamber tectosome.
(for solving the method for problem)
First to the 3rd optics of the present invention is with film chamber tectosome, and any one all is assembled into the wiring substrate, and has shelved optical element chip at this optics on film chamber tectosome.
First optics film chamber tectosome, by two-layer at least insulator layer and at least the mutual alternative stacked of two metal layers make, comprise: be formed on the first terminal portion that is electrically connected with the wiring substrate on the assembling face that is assembled in the wiring substrate, middle body on the surface of an opposite side with assembling face has the film chamber portion of approximate rectangular peristome, is formed on the light transmission member rest portion that lies on the table around the light transmission member that the opposite side of peristome lip-deep receives optical element chip or the light of emission sees through; In addition, in the portion of film chamber, the bottom surface, when being the part of first metal covering, still shelve the chip rest portion of optical element chip, each internal face, be from the bottom surface on the direction of peristome, by first insulator layer, second metal level and the second insulator layer lamination form, from the teeth outwards, formed a plurality of prominent portions that establish that are made of first insulator layer and second metal level, each prominent second metal level of establishing portion is with when the first terminal portion is electrically connected, second portion of terminal that also is electrically connected with optical element chip, light transmission member rest portion is the part of second insulator layer, comprises the fixedly fixed part of light transmission member.
Second optics film chamber tectosome, by three-layer insulated at least body layer and at least the mutual alternative stacked of three-layer metal layer make, comprise: be formed on the assembling face that is assembled in the wiring substrate with the first terminal portion that is electrically connected of wiring substrate, the middle body on the surface of an opposite side with assembling face has the film chamber portion of approximate rectangular peristome; In addition, in the portion of film chamber, the bottom surface, when being the part of the first metal layer, still shelve the chip rest portion of optical element chip, each internal face, be from the bottom surface on the direction of peristome, by first insulator layer, second metal level, second insulator layer, the 3rd metal level and the 3rd insulator layer lamination form, from the teeth outwards, a plurality of first prominent portions that establish that constitute by first insulator layer and second metal level have been formed, constitute by second insulator layer and the 3rd metal level, and than the second short prominent portion that establishes of the first prominent portion of establishing, each first prominent second metal level of establishing portion is with when the first terminal portion is electrically connected, second portion of terminal that also is electrically connected with optical element chip, second prominent the 3rd layer on surface of metal of establishing portion is to have shelved optical element chip to be received or the light transmission member rest portion of the light transmission member that the light of emission passes through.
The 3rd optics film chamber tectosome, by two-layer at least insulator layer and at least the mutual alternative stacked of three-layer metal layer make, comprise: be formed on the first terminal portion that is electrically connected with the wiring substrate on the assembling face that is assembled in the wiring substrate, have the film chamber portion of approximate rectangular peristome at the middle body of the face of an opposite side, be formed on around the chimeric optical component fitting portion of optical component that the opposite side of peristome lip-deep receives optical element chip or the light of emission sees through with assembling face; In addition, in the portion of film chamber, the bottom surface, when being the part of the first metal layer, still shelve the chip rest portion of optical element chip, each internal face, be from the bottom surface on the direction of peristome, by first insulator layer, second metal level and the second insulator layer lamination form, from the teeth outwards, a plurality of prominent portions that establish that constitute by first insulator layer and second metal level have been formed, each prominent second metal level of establishing portion is with when the first terminal portion is electrically connected, second portion of terminal that also is electrically connected with optical element chip, with the face of the bottom surface approximately parallel light transmission member fitting portion of film chamber portion, be the part of the 3rd metal level.
First to the 3rd optics can be shelved the light transmission member with on the tectosome of film chamber, or chimeric optics.Therefore, this tectosome inside, film chamber can be installed in the optical system semiconductor device.
Particularly, first optics is adjacent to the light transmission member and fixes with film chamber tectosome.Also have, second optics can set aside to the light transmission member in the portion of film chamber with film chamber tectosome, thus can provide miniaturization optics.
First optics of the present invention, comprise: above-mentioned first optics film chamber tectosome, be shelved on optics with the optical element chip on the chip rest portion of film chamber tectosome, be shelved on optics with the light transmission member on the light transmission member rest portion of film chamber tectosome.
Second optics of the present invention, comprise: above-mentioned second optics film chamber tectosome, be shelved on optics with the optical element chip on the chip rest portion of film chamber tectosome, be shelved on optics with the light transmission member on the light transmission member rest portion of film chamber tectosome.
The 3rd optics of the present invention, comprise: above-mentioned the 3rd optics film chamber tectosome, be shelved on optics with the optical element chip on the chip rest portion of film chamber tectosome, be entrenched in optics with the optics on the optics fitting portion of film chamber tectosome.So-called " optics " is lens barrel etc.
First to the 3rd optics is because all comprise above-mentioned first to the 3rd optics separately with film chamber tectosome, so show and approximately uniform effect as mentioned above.
The first to fourth optics of the present invention manufacture method of film chamber tectosome, this optics all is assembled into the wiring substrate with any one of film chamber tectosome, and shelved optical element chip on film chamber tectosome at this optics, comprise: the first terminal portion that is electrically connected with the wiring substrate, second portion of terminal that is electrically connected with the first terminal portion, shelved the chip rest portion of the optical element chip that is electrically connected with second portion of terminal, shelve optical element chip is received or the optics of the light transmission member rest portion of the light transmission member that the light of emission sees through with the manufacture method of film chamber tectosome.
First manufacture method, comprise: prepare to comprise the first metal layer that becomes the first terminal portion on the surface that is formed on first insulator layer, be formed on second metal level on another surface of first insulator layer, be formed on second insulator layer of second layer on surface of metal, the periphery that is formed on the second insulator layer surface reaches from three metal level of periphery towards a plurality of tongue-shaped portions of the central part on the second insulator layer surface, being formed on the 3rd layer on surface of metal reaches not by the mother metal substrate preparatory process of the mother metal substrate of the 3rd insulator layer on second insulator layer of this three-layer metal face covering, surface irradiation laser to the mother metal substrate, remove not by the part of second insulator layer of the 3rd metal level covering, do not form the part of the 3rd insulator layer of the 3rd metal level and the part that is formed on the 3rd insulator layer on tongue-shaped, and, the laser radiation operation of the remainder of surperficial hacking the 3rd insulator layer; In the laser radiation operation, by removing second and third insulator layer, the middle body that forms the mother metal substrate surface has the film chamber portion of approximate rectangular peristome, by removing second insulator layer, at least a portion of second metal level is when forming the film chamber portion bottom surface of being exposed, also become the optical element chip rest portion, by removing of the 3rd insulator layer, each tongue-shaped is exposed, formed a plurality of the dashing forward when establishing portion that is darted on each internal face of film chamber portion, also become second portion of terminal, the surperficial hacking of the remainder by the 3rd insulator layer forms light transmission member rest portion.
Second manufacture method, comprise: prepare to comprise the first metal layer that becomes the first terminal portion on the surface that is formed on first insulator layer, be formed on second metal level on another surface of first insulator layer, be formed on second insulator layer of second layer on surface of metal, the periphery that is formed on the second insulator layer surface reaches from three metal level of periphery towards a plurality of tongue-shaped portions of the central part on the second insulator layer surface, being formed on the 3rd layer on surface of metal reaches not by the mother metal substrate preparatory process of the mother metal substrate of the 3rd insulator layer on second insulator layer of the 3rd metal level covering, to corresponding to the mother metal substrate surface irradiating laser that does not form the 3rd metal level part and tongue-shaped portion, remove not by the laser radiation operation of the illuminated part of the part of second insulator layer of the 3rd metal level covering and the 3rd insulator layer, and, after the laser radiation operation, form resist layer on the remainder of the 3rd insulator layer, the light transmission member rest portion that forms light transmission member rest portion forms operation; In the laser radiation operation, by removing second and third insulator layer, middle body at the mother metal substrate surface, formation has the film chamber portion of approximate rectangular peristome, by removing second insulator layer, at least a portion of second metal level is exposed, in the time of shape film forming chamber portion bottom surface, also become the optical element chip rest portion, by removing of the 3rd insulator layer, each tongue-shaped is exposed, and has formed a plurality of the dashing forward when establishing portion that is darted on each internal face of film chamber portion, also becomes second portion of terminal.
The 3rd manufacture method, comprise: prepare to comprise the first metal layer that becomes the first terminal portion on the surface that is formed on first insulator layer, be formed on another lip-deep second metal level of first insulator layer, be formed on second insulator layer of second layer on surface of metal, the periphery that is formed on the second insulator layer surface reaches from three metal level of periphery towards a plurality of tongue-shaped portions of the central part on the second insulator layer surface, be formed on the 3rd insulator layer surface that is arranged on the 3rd metal level and four metal level also narrower than the 3rd metal level, being formed on the 4th layer on surface of metal reaches not by the mother metal substrate preparatory process of the mother metal substrate of the 4th insulator layer on the 3rd insulator layer of the 4th metal level covering, to corresponding to the part that does not form the 3rd metal level, the mother metal substrate surface irradiating laser of the periphery of tongue-shaped and tongue-shaped portion is removed the illuminated part of the 4th insulator layer, not by the 3rd insulator layer part of the 4th metal level covering, not by the laser radiation operation of second insulator layer part of the 3rd metal level covering; In the laser radiation operation, by removing second, the the 3rd and the 4th insulator layer, middle body at the mother metal substrate surface, formation has the film chamber portion of approximate rectangular peristome, by removing second insulator layer, at least a portion of second metal level is exposed, in shape film forming chamber portion bottom surface, also become the optical element chip rest portion, by removing of the 3rd insulator layer, each tongue-shaped is exposed, and has formed a plurality of the dashing forward when establishing portion that is darted on each internal face of film chamber portion, also becomes second portion of terminal, by removing of the 4th insulator layer, at least a portion of the 4th metal level is exposed, on each internal face of film chamber portion, form than the first prominent portion of establishing short second prominent establish portion in, become light transmission member rest portion.
The 4th manufacture method, be to comprise the first terminal portion that is electrically connected with the wiring substrate on the wiring substrate of having shelved optical element chip that is assembled in, second portion of terminal that is electrically connected with the first terminal portion, shelved the chip rest portion of the optical element chip that is electrically connected with second portion of terminal, the optics manufacture method of film chamber tectosome of the optics fitting portion of the optics that the chimeric light that optical element chip is received or launch passes through.And, also comprise: prepare to comprise the first metal layer that becomes the first terminal portion on the surface that is formed on first insulator layer, be formed on second metal level on another surface of first insulator layer, be formed on second insulator layer of second layer on surface of metal, the periphery that is formed on the second insulator layer surface reaches from three metal level of periphery towards a plurality of tongue-shaped portions of the central part on the second insulator layer surface, be formed on the 3rd insulator layer surface that is arranged on the 3rd metal level and four metal level also narrower than the 3rd metal level, being formed on the 4th layer on surface of metal reaches not by the mother metal substrate preparatory process of the mother metal substrate of the 4th insulator layer on the 3rd insulator layer of the 4th metal level covering, to corresponding to the part that does not form the 3rd metal level, the mother metal substrate surface irradiating laser of the periphery of tongue-shaped and tongue-shaped portion is removed the illuminated part of the 4th insulator layer, not by the 3rd insulator layer part of the 4th metal level covering, not by the laser radiation operation of second insulator layer part of the 3rd metal level covering; In the laser radiation operation, by removing second, the the 3rd and the 4th insulator layer, middle body at the mother metal substrate surface forms the film chamber portion with approximate rectangular peristome, by removing second insulator layer, at least a portion of second metal level is exposed, in shape film forming chamber portion bottom surface, also become the optical element chip rest portion, by removing of the 3rd insulator layer, each tongue-shaped is exposed, formed a plurality of the dashing forward when establishing portion that is darted on each internal face of film chamber portion, also become second portion of terminal, by removing of the 4th insulator layer, at least a portion of the 4th metal level is exposed, on each inner wall part of film chamber portion, form than the first prominent portion of establishing short second prominent establish portion in, become light transmission member rest portion.
In first to fourth manufacture method, formed the part of shelving light transmission member or lens barrel etc.For this reason, the tectosome inside according to this manufacture method manufacturing can be installed in the optics.
Also have, metal level works as laser blocking layer.For this reason, can not consider that edge part of making etc. designs.
The 4th optics of the present invention is to be assembled on the wiring substrate with film chamber tectosome, and has shelved the optics film chamber tectosome of optical element chip.And, be by two-layer at least insulator layer and at least the mutual alternative stacked of three-layer metal layer make, comprise: be formed on the first terminal portion that is electrically connected with the wiring substrate on the assembling face that is assembled into the wiring substrate, have the film chamber portion of approximate rectangular peristome at the middle body of the face of an opposite side, optical element chip is received or the chimeric light transmission member fitting portion of light transmission member that the light of emission sees through with assembling face; In addition, in the portion of film chamber, the bottom surface, when being the part of the first metal layer, still shelve the chip rest portion of optical element chip, each internal face, be from the bottom surface on the direction of peristome, by first insulator layer, second metal level and the second insulator layer lamination form, from the teeth outwards, a plurality of prominent portions that establish that constitute by first insulator layer and second metal level have been formed, each prominent second metal level of establishing portion, each is with when the first terminal portion is electrically connected, second portion of terminal that also is electrically connected with optical element chip, by assembling face one side, be provided with the 3rd metal level than the first metal layer.
The 4th optics of the present invention is with in the tectosome of film chamber, can improve the planarization of chip rest portion etc.Therefore, when parts such as lift-launch lens barrel, can not produce deflection influence.
The 4th optics of the present invention comprises: the 4th optics of the present invention with film chamber tectosome, be shelved on optics with the optical element chip on the chip rest portion of film chamber tectosome and be shelved on optics with the light transmission member on the light transmission member rest portion of film chamber tectosome.
The the 5th to the 7th optics of the present invention film chamber tectosome, any one all is assembled into the wiring substrate, and this optics is with having shelved optical element chip on the tectosome of film chamber.
The 5th optics film chamber tectosome, be by two-layer at least insulator layer and at least the mutual alternative stacked of two metal layers make, comprise: the film chamber portion that has approximate rectangular peristome at the middle body of face with the opposite side of assembling face that is assembled in the wiring substrate, be formed on and center on the face of the opposite side of peristome, shelved and optical element chip is received or the light transmission member rest portion of the light transmission member that the light of emission sees through, and the first terminal portion that is electrically connected with the wiring of wiring substrate; In addition, in the portion of film chamber, the bottom surface, when being the part of first metal covering, still shelve the chip rest portion of optical element chip, each internal face, be from the bottom surface on the direction of peristome, by first insulator layer, second metal level and the second insulator layer lamination form, from the teeth outwards, a plurality of prominent portions that establish that constitute by first insulator layer and second metal level have been formed, each prominent second metal level of establishing portion is with when the first terminal portion is electrically connected, second portion of terminal that also is electrically connected with optical element chip, the first terminal portion, from outwards outstanding with respect to the approximately perpendicular outside wall surface of assembling face, with the lower surface of this first terminal portion at least the part of side covered light transmission member rest portion by conductor layer, be the part of second insulator layer, comprise the fixedly fixed part of light transmission member.
The 6th optics film chamber tectosome, be by three-layer insulated at least body layer and at least the mutual alternative stacked of three-layer metal layer make, comprise: have the film chamber portion of approximate rectangular peristome, the first terminal portion that is electrically connected with the wiring of wiring substrate at the middle body of the face of an opposite side with assembling face; In the portion of film chamber, the bottom surface, when being the part of the first metal layer, still shelve the chip rest portion of optical element chip, each internal face, be from the bottom surface on the direction of peristome, by first insulator layer, second metal level, second insulator layer, the 3rd metal level and the 3rd insulator layer lamination form, from the teeth outwards, a plurality of first prominent portions that establish that constitute by first insulator layer and second metal level have been formed, and constitute by second insulator layer and the 3rd metal level, and the second short prominent portion that establishes of each first prominent portion of establishing than this, each first prominent second metal level of establishing portion, be with when the first terminal portion is electrically connected, second portion of terminal that also is electrically connected with optical element chip, second prominent the 3rd layer on surface of metal of establishing portion, be to have shelved optical element chip to be received or the light transmission member rest portion of the light transmission member that the light of emission passes through, the first terminal portion, outwards outstanding with respect to assembling face from approximately perpendicular outside wall surface, with the lower surface of this first terminal portion at least the part of side covered by conductor layer.
The 7th optics film chamber tectosome, be by two-layer at least insulator layer and at least the mutual alternative stacked of three-layer metal layer make, comprise: the film chamber portion that has approximate rectangular peristome at the middle body of the face of an opposite side with assembling face, form recess shape around peristome, the chimeric optics fitting portion of optics that the light that optical element chip is received or launch sees through, the first terminal portion that is electrically connected with the wiring of wiring substrate; In addition, in the portion of film chamber, the bottom surface, when being the part of the first metal layer, still shelve the chip rest portion of optical element chip, each internal face, be from the bottom surface on the direction of peristome, by first insulator layer, second metal level and the second insulator layer lamination form, and from the teeth outwards, have formed a plurality of prominent portions that establish that are made of first insulator layer and second metal level, each prominent second metal level of establishing portion, be with when the first terminal portion is electrically connected, second portion of terminal that also is electrically connected with optical element chip is with the face of the approximately parallel optics fitting portion in bottom surface of film chamber portion, it is the part of the 3rd metal level, the first terminal portion, from outwards outstanding with respect to the approximately perpendicular outside wall surface of assembling face, with the lower surface of this first terminal portion at least the part of side covered by conductor layer.
The the 5th to the 7th optics can be shelved the light transmission member with in the tectosome of film chamber, or chimeric optics.Therefore, this tectosome inside, film chamber can be installed in the optical system semiconductor device.
Particularly, the 5th optics is adjacent to the light transmission member and fixes with film chamber tectosome.Also have, the 6th optics can set aside to the light transmission member in the portion of film chamber with film chamber tectosome, thus can provide miniaturization optics.
The 5th optics of the present invention, comprise: above-mentioned the 5th optics film chamber tectosome, be shelved on the optical element chip of optics, be shelved on the light transmission member of optics with the light transmission member rest portion of film chamber tectosome with the chip rest portion of film chamber tectosome.
The 6th optics of the present invention, comprise: above-mentioned the 6th optics film chamber tectosome, be shelved on the optical element chip of optics, be shelved on the light transmission member of optics with the light transmission member rest portion of film chamber tectosome with the chip rest portion of film chamber tectosome.
The 7th optics of the present invention, comprise: above-mentioned the 7th optics film chamber tectosome, be shelved on the optical element chip of optics, be entrenched in the optics of optics with the optics fitting portion of film chamber tectosome with the chip rest portion of film chamber tectosome.So-called " optics " is lens barrel etc.
The the 5th to the 7th optics is because all comprise above-mentioned the 5th to the 7th optics separately with film chamber tectosome, so show and the above approximately uniform effect.
The the 5th to the 8th optics of the present invention manufacture method of film chamber tectosome, optics all is assembled into the wiring substrate with any one of film chamber tectosome, and shelved optical element chip on film chamber tectosome at this optics, comprise: the first terminal portion that is electrically connected with the wiring substrate, second portion of terminal that is electrically connected with the first terminal portion, shelved the chip rest portion of the optical element chip that is electrically connected with second portion of terminal, shelved optical element chip is received or the optics of the light transmission member rest portion of the light transmission member that emission light sees through with the manufacture method of film chamber tectosome.
The 5th manufacture method, comprise: formation comprises a lip-deep the first metal layer that is formed on first insulator layer, be formed on second metal level with outward extending a plurality of first tongue-shaped portions on another surface of first insulator layer, be formed on second insulator layer of second layer on surface of metal, the periphery that is formed on the second insulator layer surface reaches from three metal level of periphery towards a plurality of second tongue-shaped portions of the central part on the second insulator layer surface, is formed on the 3rd layer on surface of metal and is formed operation by the mother metal substrate of the mother metal substrate of the 3rd insulator layer on second insulator layer of the 3rd metal level covering; Surface irradiation laser to the mother metal substrate, remove not by the part of second insulator layer of the 3rd metal level covering, do not form the part of the 3rd insulator layer of the 3rd metal level, the first insulator layer part that is formed on the part of the 3rd insulator layer on second tongue-shaped and is not covered by the second layer metal layer, and, the laser radiation operation of the remainder of surperficial hacking the 3rd insulator layer; In the laser radiation operation, by removing second and third insulator layer, the middle body that forms the mother metal substrate surface has the film chamber portion of approximate rectangular peristome, by removing second insulator layer, at least a portion of second metal level is when forming the film chamber portion bottom surface of being exposed, also become the optical element chip rest portion, and expose the first tongue-shaped portion, by removing of first insulator layer, on first tongue-shaped, form the first terminal portion that upper surface is capped, by removing of the 3rd insulator layer, second each tongue-shaped is exposed, and has formed a plurality of the dashing forward when establishing portion that is darted on each internal face of film chamber portion, also becomes second portion of terminal, the surperficial hacking of the remainder by the 3rd insulator layer forms light transmission member rest portion.
The 6th manufacture method, comprise: formation comprises a lip-deep the first metal layer that is formed on first insulator layer, be formed on second metal level with outward extending a plurality of first tongue-shaped portions on another surface of first insulator layer, be formed on second insulator layer of second layer on surface of metal, the periphery that is formed on the second insulator layer surface reaches from three metal level of periphery towards a plurality of second tongue-shaped portions of the central part on the second insulator layer surface, is formed on the 3rd layer on surface of metal and is formed operation by the mother metal substrate of the mother metal substrate of the 3rd insulator layer on second insulator layer of the 3rd metal level covering; To corresponding to the mother metal substrate surface irradiating laser that does not form the 3rd metal level part and the second tongue-shaped portion, remove not by the laser radiation operation of the illuminated part of a part of the illuminated part of the part of second insulator layer of the 3rd metal level covering, the 3rd insulator layer and first insulator layer; After the laser radiation operation, form resist layer on the surface of the remainder of the 3rd insulator layer, the light transmission member rest portion that forms light transmission member rest portion forms operation; In the laser radiation operation, by removing second and third insulator layer, middle body at the mother metal substrate surface, formation has the film chamber portion of approximate rectangular peristome, by removing second insulator layer, at least a portion of second metal level is exposed, in the time of shape film forming chamber portion bottom surface, also become the optical element chip rest portion, and expose the first tongue-shaped portion, by removing of first insulator layer, form the first terminal portion that upper surface is capped on first tongue-shaped, by removing of the 3rd insulator layer, second each tongue-shaped is exposed, form a plurality of the dashing forward when establishing portion that is darted on each internal face of film chamber portion, also become second portion of terminal.
The 7th manufacture method, comprise: formation comprises a lip-deep the first metal layer that is formed on first insulator layer, be formed on second metal level with outward extending a plurality of first tongue-shaped portions on another surface of first insulator layer, be formed on second insulator layer of second layer on surface of metal, the periphery that is formed on the second insulator layer surface reaches from three metal level of periphery towards a plurality of second tongue-shaped portions of the central part on the second insulator layer surface, be formed on the 3rd insulator layer surface on the 3rd metal level and four metal level also narrower, be formed on the 4th layer on surface of metal and do not formed operation by the mother metal substrate of the mother metal substrate of the 4th insulator layer on the 3rd insulator layer of the 4th metal level covering than the 3rd metal level; To mother metal substrate surface irradiating laser, remove the laser radiation operation of the part of the illuminated part of the 4th insulator layer, the 3rd insulator layer part that is not covered, second insulator layer part that is not covered by the 3rd metal level and first insulator layer by the 4th metal level corresponding to the periphery that does not form the 3rd metal level, second tongue-shaped and tongue-shaped portion; In the laser radiation operation, by removing second, the the 3rd and the 4th insulator layer, middle body at the mother metal substrate surface, formation has the film chamber portion of approximate rectangular peristome, by removing second insulator layer, at least a portion of second metal level is when forming the film chamber portion bottom surface of being exposed, also become the optical element chip rest portion, and expose the first tongue-shaped portion, by removing of first insulator layer, on first tongue-shaped, form the first terminal portion that upper surface is capped, by removing of the 3rd insulator layer, second each tongue-shaped is exposed, and has formed a plurality of the dashing forward when establishing portion that is darted on each internal face of film chamber portion, also becomes second portion of terminal, by removing of the 4th insulator layer, at least a portion of the 4th metal level is exposed, on each internal face of film chamber portion, form than the first prominent portion of establishing short second prominent establish portion in, become light transmission member rest portion.
The 8th manufacture method, comprise: formation comprises a lip-deep the first metal layer that is formed on first insulator layer, be formed on second metal level with outward extending a plurality of first tongue-shaped portions on another surface of first insulator layer, be formed on second insulator layer of second layer on surface of metal, the periphery that is formed on the second insulator layer surface reaches from three metal level of periphery towards a plurality of second tongue-shaped portions of the central part on the second insulator layer surface, be formed on the 3rd insulator layer surface on the 3rd metal level and four metal level also narrower, be formed on the 4th layer on surface of metal and do not formed operation by the mother metal substrate of the mother metal substrate of the 4th insulator layer on the 3rd insulator layer of the 4th metal level covering than the 3rd metal level; To mother metal substrate surface irradiating laser, remove the laser radiation operation of the part of the illuminated part of the 4th insulator layer, the 3rd insulator layer part that is not covered, second insulator layer part that is not covered by the 3rd metal level and first insulator layer by the 4th metal level corresponding to the part that does not form the 3rd metal level, second tongue-shaped and the 4th metal level; In the laser radiation operation, by removing second, the the 3rd and the 4th insulator layer, middle body at the mother metal substrate surface, formation has the film chamber portion of approximate rectangular peristome, by removing second insulator layer, at least a portion of second metal level is when forming the film chamber portion bottom surface of being exposed, also become the optical element chip rest portion, and expose the first tongue-shaped portion, by removing of first insulator layer, on first tongue-shaped, form the first terminal portion that upper surface is capped, by removing of the 3rd insulator layer, second each tongue-shaped is exposed, formed and be darted at when a plurality of first on each internal face of film chamber portion is prominent establishes portion, also become second portion of terminal, the removing of the peripheral part by the 4th insulator layer, at least a portion of the 4th metal level is exposed, and forms the optics fitting portion.
In the 5th to the 8th manufacture method, formed the part of shelving light transmission member or lens barrel etc.For this reason, the tectosome inside according to this manufacture method manufacturing can be installed in the optics.
Also have, metal level works as laser blocking layer.For this reason, can not consider that edge part of making etc. designs.
(effect of invention)
Among the present invention, when not needing to be pre-formed separating tank and just can making, also implemented to shelve the method for the optics of light transmission member or lens barrel etc.
Description of drawings
Fig. 1 is the stereogram of the optics of expression execution mode 1 with the structure of film chamber tectosome C1.
Fig. 2 (a) is the profile of the optics of expression execution mode 1 with the structure of film chamber tectosome C1, and Fig. 2 (b) is upper surface figure.
Fig. 3 is the profile of the optics of expression execution mode 1 with the part of the manufacturing process of film chamber tectosome C1.
Fig. 4 is the profile of the optics of expression execution mode 1 with another part of the manufacturing process of film chamber tectosome C1.
Fig. 5 is the profile of the optics of expression execution mode 1 with another part again of the manufacturing process of film chamber tectosome C1.
Fig. 6 is the profile of manufacturing process of the optics D1 of expression execution mode 1.
Fig. 7 is the process chart of manufacturing process of the optics D1 of expression execution mode 1.
Fig. 8, the optics of mode of texturing 1 that is expression execution mode 1 is with the stereogram of the structure of film chamber tectosome C101.
Fig. 9, the optics of mode of texturing 2 that is expression execution mode 1 is with the stereogram of the structure of film chamber tectosome C201.
Figure 10 is the stereogram of the optics of expression execution mode 2 with the structure of film chamber tectosome C2.
Figure 11 is the profile of the optics of expression execution mode 2 with the part of the manufacturing process of film chamber tectosome C2.
Figure 12 is the profile of the optics of expression execution mode 3 with the structure of film chamber tectosome C3.
Figure 13 is the profile of the optics of expression execution mode 3 with the part of the manufacturing process of film chamber tectosome C3.
Figure 14 is the profile of a part of manufacturing process of the optics D3 of expression execution mode 3.
Figure 15 is the profile of the optics of expression execution mode 4 with the structure of film chamber tectosome C4.
Figure 16 is the profile of the optics of expression execution mode 4 with the part of the manufacturing process of film chamber tectosome C4.
Figure 17 is the stereogram of the optics D4 of execution mode 4.
Figure 18 is the profile of the optics of expression execution mode 5 with the part of the manufacturing process of film chamber tectosome C5.
Figure 19 is the profile of the optics of expression execution mode 5 with another part of the manufacturing process of film chamber tectosome C5.
Figure 20 is the stereogram of the optics of expression execution mode 5 with the back side one side of film chamber tectosome C5.
Figure 21 is the stereogram of the optics of expression execution mode 6 with the structure of film chamber tectosome C6.
Figure 22 (a) is the profile of the optics of expression execution mode 6 with the structure of film chamber tectosome C6, and Figure 22 (b) is upper surface figure.
Figure 23 is the profile of the optics of expression execution mode 6 with the part of the manufacturing process of film chamber tectosome C6.
Figure 24 is the profile of the optics of expression execution mode 6 with another part of the manufacturing process of film chamber tectosome C6.
Figure 25 is the profile of the optics of expression execution mode 6 with another part again of the manufacturing process of film chamber tectosome C6.
Figure 26 is the profile of manufacturing process of the optics D6 of expression execution mode 6.
Figure 27 is the process chart of manufacturing process of the optics D6 of expression execution mode 6.
Figure 28, the optics of mode of texturing 1 that is expression execution mode 6 is with the stereogram of the structure of film chamber tectosome C106.
Figure 29, the optics of mode of texturing 2 that is expression execution mode 6 is with the stereogram of the structure of film chamber tectosome C206.
Figure 30 is the profile of the optics of expression execution mode 7 with the structure of film chamber tectosome C7.
Figure 31 is the profile of the optics of expression execution mode 8 with the structure of film chamber tectosome C8.
Figure 32 is the profile of the optics of expression execution mode 8 with the part of the manufacturing process of film chamber tectosome C8.
Figure 33 is the profile of a part of manufacturing process of the optics D8 of expression execution mode 8.
Figure 34 is the profile of the optics of expression execution mode 9 with the structure of film chamber tectosome C9.
Figure 35 is the profile of the optics of expression execution mode 9 with the part of the manufacturing process of film chamber tectosome C9.
Figure 36 is the stereogram of the optics D9 of expression execution mode 9.
Figure 37 is the profile of the optics of expression execution mode 10 with the part of the manufacturing process of film chamber tectosome C10.
Figure 38 is the profile of the optics of expression execution mode 10 with another part of the manufacturing process of film chamber tectosome C10.
Figure 39 is the stereogram of the optics of expression execution mode 10 with the back side one side of film chamber tectosome C10.
Figure 40 is the stereogram of the optics of expression execution mode 11 with the structure of film chamber tectosome C11.
Figure 41 (a) is the profile of the optics of expression execution mode 11 with the structure of film chamber tectosome C11, and Figure 41 (b) is upper surface figure.
Figure 42 is the profile of the optics of expression execution mode 11 with the part of the manufacturing process of film chamber tectosome C11.
Figure 43 is the profile of the optics of expression execution mode 11 with another part of the manufacturing process of film chamber tectosome C11.
Figure 44 is the profile of the optics of expression execution mode 11 with another part again of the manufacturing process of film chamber tectosome C11.
Figure 45 is the profile of manufacturing process of the optics D11 of expression execution mode 11.
Figure 46 is the process chart of manufacturing process of the optics D11 of expression execution mode 11.
Figure 47, the optics of mode of texturing 1 that is expression execution mode 11 is with the stereogram of the structure of film chamber tectosome C111.
Figure 48, the optics of mode of texturing 2 that is expression execution mode 11 is with the stereogram of the structure of film chamber tectosome C211.
Figure 49 is the profile of the optics of expression execution mode 12 with the structure of film chamber tectosome C12.
Figure 50 is the profile of the optics of expression execution mode 12 with the part of the manufacturing process of film chamber tectosome C12.
Figure 51 is the profile of the optics of expression execution mode 13 with the structure of film chamber tectosome C13.
Figure 52 is the profile of the optics of expression execution mode 13 with the part of the manufacturing process of film chamber tectosome C13.
Figure 53 is the profile of a part of manufacturing process of the optics D13 of expression execution mode 13.
Figure 54 is the profile of the optics of expression execution mode 14 with the structure of film chamber tectosome C14.
Figure 55 is the profile of the optics of expression execution mode 14 with the part of the manufacturing process of film chamber tectosome C14.
Figure 56 is the stereogram of the optics D14 of expression execution mode 14.
Figure 57 is the profile of the optics of expression execution mode 15 with the part of the manufacturing process of film chamber tectosome C15.
Figure 58 is the profile of the optics of expression execution mode 15 with another part of the manufacturing process of film chamber tectosome C15.
Figure 59 is the stereogram of the optics of expression execution mode 15 with the back side one side of film chamber tectosome C15.
Figure 60 is the upper surface figure when making a plurality of optics with film chamber tectosome C11 in the execution mode 11 simultaneously.
(symbol description)
2,4,6,8 film chamber portions
2a, 102a, 202a peristome
11,13,15,19,53,73 insulator layers
12,14,16,18,52,72 metal levels
15a, 135,52a light transmission member rest portion
The tongue-shaped portion of 16a
The 21 prominent portions that establish
31 protective film
The 41 first prominent portions that establish
The 42 second prominent portions that establish
94,112 the first terminal portions
95,113 second portion of terminal
106 second heat units
114 chip rest portion
116 second portion of terminal
118 first heat units
121 optical chips
124 light transmission members
175 optics fitting portions
The A fixing means
C1～C15 optics film chamber tectosome
D1～D15 optics
Embodiment
Before the explanation embodiments of the present invention, the item that inventors have studied is described earlier in order to finish the present invention.
The optical system semiconductor device, best is to comprise four inscapes.Below, when enumerating four elements, the necessity of these inscapes is described.
First inscape is the optics of light transmission member and lens barrel etc.And, these opticses, relative with the optical surface of optical element chip, be set at optics with on film chamber tectosome or the optics.
Second inscape is the good evenness of optics.As the evenness of optics, can enumerate the evenness of chip rest portion and the evenness of above-mentioned optics rest portion.With regard to the chip rest portion, do not possess good evenness as the fruit chip rest portion, when shelving optical element chip, it is approximate parallel that optical element chip and assembling face are become.For this reason, optical element chip is to receive under the situation of light element, the part of the light that should receive is blocked and can not be received by optical element chip with film chamber tectosome or optics by optics, be that the part of the light that should launch is blocked with film chamber tectosome or optics by optics and can not be launched by optical element chip under the situation of emission light element at optical element chip again.Also have,,, optics and assembling face are become be similar to and shelve abreast if the optics rest portion does not possess good evenness with regard to the optics rest portion.For this reason, will influence the gradient of optics when carrying optics, its result makes the mis-behave of optics.
The 3rd inscape is that the diffuse reflection (irregular reference) of light prevents method in the device.In the semiconductor device of optical system, optical element chip is electrically connected between elecroconductive thin line with portion of terminal (second portion of terminal), and these elecroconductive thin lines are connected on the optical surface of optical element chip.For this reason, the worry that just has the light of light that optical element chip receives or emission to be reflected by elecroconductive thin line.If diffuse reflection (irregular reference) has taken place, the minimizing that not only causes receiving light or launch the intensity of light, also can cause the reception or the emission of the light of diffuse reflection (irregular reference), its result causes the reduction of the optical system performance of semiconductor devices of analysis feature reduction etc.
The 4th inscape is to prevent to tie the mist function.Humidity uprises, and the glass portion of optics grades and can tie mist, and it is impossible that the reception of light and emission all become.
Because above reason, optics film chamber tectosome or optics, best is to be included as the optics rest portion of shelving these opticses, best is to have good evenness, best is to comprise that light diffuse reflection (irregular reference) prevents method, and best is to comprise that the knot mist prevents function.
In view of above these points, the application's inventors have finished the application's invention.Below, describe the present invention in detail based on accompanying drawing.In the following drawings, for simplicity, the inscape with identical in fact function is marked with identical symbol.And the present invention is not only limited to execution mode shown below.
" working of an invention mode 1 "
In the execution mode 1, use Fig. 1 to Fig. 7, expression the optics structure of film chamber tectosome C1 and structure and the manufacture method of manufacture method and optics D1.Fig. 1 and Fig. 2, each represents stereogram and the profile of optics with the structure of film chamber tectosome C1 naturally.And Fig. 2 (a) is the profile of the IIA-IIA line shown in Fig. 2 (b).Fig. 3 to Fig. 5 is the profile of expression optics with the manufacturing process of film chamber tectosome C1.Fig. 6 and Fig. 7, each represents the profile and the stereogram of the manufacturing process of optics D1 naturally.
The structure of-optics usefulness film chamber tectosome C1-
Optics film chamber tectosome C1, as shown in Figures 1 and 2,, comprising according to the sequential aggradation of the first metal layer 12, first insulator layer 11, second metal level 14, second insulator layer 13, the 3rd metal level 16, the 3rd insulator layer 15 from the assembling face (lower surface of Fig. 1) that is assembled in the wiring substrate: 2,16 second portion of terminal 116,116 of film chamber portion ..., chip rest portion 114, light transmission member rest portion 15a and 16 the first terminal portions 112,112 ...And, first, second and third insulator layer 11,13,15, best separately is to comprise the porous material (not shown) with moisture absorbing.Thus, optics has the knot mist and prevents function with film chamber tectosome C1.Also have, first, second and third metal level 12,14,16, best separately is to be formed by copper (Cu).Thus, can make optics film chamber tectosome C1 by irradiating laser.
Film chamber portion 2, as shown in Figure 1, optics has approximate rectangular peristome 2a with the upper face center of film chamber tectosome C1, is cuted out to become to be similar to rectangular-shaped and form.The bottom surface as shown in Figure 2, is implemented coating 104 at the upper surface of second metal level, 14 central authorities and is formed.Also have, internal face, each leisure, forms according to the sequential aggradation of second insulator layer 13, the 3rd metal level 16, the 3rd insulator layer 15 to the direction of peristome 2a from the bottom surface, formed add up to 16 prominent establish portion 21,21 ...Prominent establish portion 21,21 ..., on each internal face, form four respectively, become equidistant setting mutually, the side of three directions of each second insulator layer 13 and the 3rd metal level 16 becomes same plane separately.
Second portion of terminal 116,116 ..., as Fig. 1 and shown in Figure 3, coating 104 film chamber portion 2 prominent establish portion 21,21 ... in implement to form on the upper surface of the 3rd metal level 16 and the side.
Chip rest portion 114, as shown in Figure 1, the bottom surface coating 104 of film chamber portion 2 is implemented to form, the record of second inscape as previously discussed, best is that profile pattern is good, specifically, forms Rz below 5 μ m more than the 1 μ m.Thus, make approximate parallel the setting aside on the chip rest portion 114 of optical element chip 121 and assembling face.So, can not have obliquely optical elements such as lens barrel carried on the optics of having shelved optical element chip 121 on the chip rest portion 114.
Also have, chip rest portion 114, the chip rest portion 114 and second portion of terminal 116,116 ... the distance of upper surface form below the thickness of optical element chip 121, this distance forms the following form of the above 575 μ m of 50 μ m.And, if this distance if shorter than 50 μ m, the thickness of second insulator layer 13 will become extremely thin and second insulator layer 13 is set just becomes very difficult.Also have, if this distance is longer than 575 μ m, and the optical surface of the ratio optical element chip 121 that the upper surface of each second portion of terminal 116 will be provided with is higher.Its result, by elecroconductive thin line 123,123 ... the light of diffuse reflection (irregular reference) is received by optical element chip 121, from the light of optical element chip 121 emission by elecroconductive thin line 123,123 ... surface diffuse reflectance (irregular reference) penetrate with film chamber tectosome C1 from optics.By above reason, what this distance was best is to form below the above 575 μ m of 50 μ m.At this, the thickness of the actual optical element chip 121 that uses, maximum is any value of the following scope of the above 200 μ m of 100 μ m.
Light transmission member rest portion 15a as shown in Figure 1, is at least a portion of the upper surface of the 3rd insulator layer 15, comprises the fixing means A of fixing light transmission member 124 described later.At this, the upper surface of the 3rd insulator layer 15 that fixing means A is a hacking.Thus, light transmission member 124 tight bond can be fixed in light transmission member rest portion 15a.And, the method of the upper surface of this 3rd insulator layer 15 of hacking is not defined, as long as hacking becomes Rz below 20 μ m more than the 5 μ m, being preferably hacking is that Rz is below 20 μ m more than the 10 μ m, be better hacking be Rz below 20 μ m more than the 15 μ m, just can make light transmission member 124 firm best and closely be bonded on the light transmission member rest portion 15a.Also have, as long as shelving light transmission member 124 behind the coating binding agent on the light transmission member rest portion 15a, just can be with light transmission member 124 firm better and bonding closely, this will be better.
The first terminal portion 112,112 ..., on each assembling face, there are four respectively, equally spaced be provided with mutually, as shown in Figure 2, implement coating 102 at the lower surface of the first metal layer 12, implement coating 104 again on coating 102 lower surfaces and form.And coating 102,104 all is to form at surface deposition gold (Au) layer of nickel (Ni) layer.
The central portion of assembling face as shown in Figure 2, has formed bending and has prevented to use recess 12a.Thus, even if shape film forming chamber portion 2 on upper surface, also can stop to the bending to assembling face one side of optics, just can prevent the bending that optical element chip 121 carries the optical element chip 121 under the state of chip rest portion 114 with film chamber tectosome C1.Also have, bending prevents to use on the lower surface of recess 12a, as shown in Figure 2, has formed insulator layer 17, thus, can stop the short circuit between the first terminal portion 112 fully.
The first terminal portion 112,112 ... with second portion of terminal 116,116 ..., all be electrically connected separately then.Specifically, add up to 16 through holes 101,101 ... (shown in Fig. 3 (b)), each all connects the first metal layer 12, first insulator layer 11 and second metal level 14 and forms, on the upper surface of the lower surface of the internal face of each through hole 101, the first metal layer 12 and second metal level 14, implemented coating 102.Also have, on second insulator layer 13, add up to 16 etched part 13a, 13a ... (shown in Fig. 4 (b)), each leisure than through hole 101,101 ... the outside, with through hole 101,101 ... form relatively.Just, as shown in Figure 2, among each etched part 13a, second metal level 14 and the 3rd metal level 16 interconnect.From the above mentioned, each the first terminal portion 112 is electrically connected with second metal level 14 between coating 102, and second metal level 14 at each etched part 13a, is electrically connected with the 3rd metal level 16.Thus, each the first terminal portion 112 is electrically connected with each second portion of terminal 116.
And, than the through hole 101,101 of second insulator layer 13 ... the inside has formed the approximate etched part 14a (shown in Fig. 3 (e)) that becomes " mouth " shape in bottom surface.For this reason, chip rest portion 114 is not electrically connected with each the first terminal portion 112.Also have, coating 102 inboards of each through hole 101 have formed resin portion 103.
Below, sum up the effect that optics is risen with film chamber tectosome C1.
Light transmission member 124 closely can be fixed on the light transmission member rest portion 15a.
Light that optical element chip 121 receives or the light that sends can be by elecroconductive thin lines 123,123 ... the surface stop diffuse reflection (irregular reference).
Be parallel to assembling face because optical surface is approximate, just optical element chip 121 can be held on chip rest portion 114.
Because the formation of film chamber portion 2 just can prevent the optics bending of film chamber tectosome C1 to assembling face one side.
Because good hygroscopicity, the light transmission member knot mist that can prevent to shelve.
Have, former optics because light transmission member or optics are left optical element chip setting, is necessary so reinforcement (rib) is set with in the tectosome of film chamber again.On the other hand, optics is with among the film chamber tectosome C1, because second and third insulator layer 13,15 and the 3rd metal level 16 of chip rest portion 114 top laminations can play the effect of reinforcement, so just there is no need specially reinforcement to be set.
The structure of-optics D1-
Shown in Fig. 6 (c) and Fig. 7 (c), optics D1 comprises optics film chamber tectosome C1, optical element chip 121, light transmission member 124.Optical element chip 121 is to be fixed on photo detector or light-emitting component on the chip rest portion 114 between binding agent 122, between elecroconductive thin line 123,123 ... with each second portion of terminal 116,116 ... connect.Light transmission member 124 is to be resting on the light transmission member rest portion 15a, and the parts that light is seen through more than 70% are preferably the parts that light is seen through more than 80%, and best is the parts that light is seen through more than 90%.Be the plate of glass specifically.
With this optics D1 be assembled into the wiring substrate on, between the first terminal portion 112,112 ..., second portion of terminal 116,116 ... and elecroconductive thin line 123,123 ..., on optical element chip 121, apply voltage.Thus, optical element chip 121 is luminous, and the light that sends sees through light transmission member 124 and penetrates optics D1.Also have, the light that sees through light transmission member 124 is received by optical element chip 121.
Like this, optics D1 because be to have shelved optical element chip 121 or light transmission member 124 on film chamber tectosome C1 at above-mentioned optics, thus play and optics with the approximately uniform effect of film chamber tectosome C1.
The manufacture method of-optics usefulness film chamber tectosome C1-
Abide by after Fig. 3 (a) made mother metal substrate S 1 to the operation shown in Fig. 4 (e), by carrying out the laser radiation shown in Fig. 5 (a), the optics shown in the shop drawings 5 (c) is with film chamber tectosome C1.Below, concrete narration.
1. the formation operation of mother metal substrate S 1
At first, shown in Fig. 3 (a), form the first metal layer 12, form second metal level 14 at the upper surface of first insulator layer 11 at the lower surface of first insulator layer 11.
Next, at the lower surface of the first metal layer 12 or the upper surface of second metal level 14, on its face with each personal laser radiation is everywhere on each bar line on the approximately parallel straight line in each limit.Thus, shown in Fig. 3 (b), 16 through hole portions 101,101 of formation total ...
Next, shown in Fig. 3 (c), on the surface of the upper surface of the lower surface of the first metal layer 12, second metal level 14 and each through hole portion 101, form nickel (Ni) layer back and form gold (Au) layer, implement coating 102 on the surface of this nickel (Ni) layer.
Next, shown in Fig. 3 (d), on inwall, implemented to inject resin in each through hole portion 101 of coating 102, formed resin portion 103.And each resin portion 103 on coating 102 surfaces is implemented not shown coating.
Next, on the part of the part of the first metal layer 12 lower surfaces that formed coating 102 and second metal level, 14 upper surfaces that formed coating 102, form etching mask, the part of the part of etching the first metal layer 12 and second metal level 14.Thus, shown in Fig. 3 (e), in the first metal layer 12, most of etchedly form bending and prevented from use recess 12a, added up to 16 places to be left on each limit of the lower surface of first insulator layer 11 everywhere.Also have, on second metal level 14, the etched part 14a that is approximately " mouth " shape is formed on than each resin portion 103 in the inner part.
Next, shown in Figure 14 (a), formed on second metal level, 14 upper surfaces of coating 102 and second insulator layer 13 in the etched part 14a.
Next, the part at second insulator layer, 13 upper surfaces forms etching mask, etching second insulator layer 13.Thus, shown in Fig. 4 (b), 16 etched part 13a, 13a ..., be formed on the outside of resin portion 103 separately, corresponding with resin portion 103.
Next, shown in Fig. 4 (c), on the surface of the upper surface of second insulator layer 13 and each etched part 13a, form the 3rd metal level 16.
Next, the part at the 3rd metal level 16 upper surfaces forms etching mask, etching the 3rd metal level 16.Thus, shown in Fig. 4 (d), when the middle body of the 3rd metal level 16 is etched into approximate rectangular shape, on the etched part (etched part), add up to 16 tongue-shaped 16a, 16a ... not etched and remaining.Tongue-shaped 16a, 16a ..., each all is to extend to the inside from each limit of etched part, respectively has four on each limit of etched part, equidistantly forms mutually.
Next, shown in Fig. 4 (e), on the upper surface of the 3rd metal level 16 and second insulator layer, 13 parts exposed by etching, form the 3rd insulator layer 15.Thus, can form mother metal substrate S 1.
2. laser radiation operation
At first, irradiating laser on mother metal substrate S 1 entire upper surface shown in Fig. 4 (e).Specifically, in the central authorities of mother metal substrate S 1 upper surface, just corresponding on mother metal substrate S 1 upper surface that does not form the 3rd metal level 16 parts and each tongue-shaped 16a, the laser that irradiating laser intensity is strong relatively.At this moment, metal level is as the work of laser barrier layer, and insulator layer is removed by the irradiation of laser.Therefore, shown in Fig. 5 (a), remove not second insulator layer, 13 parts that covered by the 3rd metal level 16 and the part of the 3rd insulator layer 15, its result, formed film chamber portion 2 and prominent establish portion 21,21 ...And, strong relatively laser, best is to make the surface of second metal level 14 become the laser irradiation condition of Rz below 5 μ m more than the 1 μ m.
Also have, on the periphery of mother metal substrate S 1 upper surface, the laser that irradiating laser intensity is weak relatively.By the irradiation of this laser, be not removed and remaining the 3rd insulator layer 15 upper surfaces are become light transmission member rest portion 15a by hacking.
Next, shown in Fig. 5 (b), bending prevents with having formed insulator layer 17 on the recess 12a.Thus, can prevent the first terminal portion 112,112 ... between short circuit.
And, tongue-shaped 16a, 16a ... upper surface on implement coating 104, form second portion of terminal 116,116 ...Formed and implemented coating 104 on second metal level, 14 upper surfaces of coating 102, formed chip rest portion 114.Also have, the first metal layer 12,12 ... the surface on implement coating 104, form the first terminal portion 112,112 ...Thus, can make optics shown in Figure 1 film chamber tectosome C1.
Below, sum up the effect that manufacture method rose of optics with film chamber tectosome C1.
Because be that irradiating laser is removed insulator layer manufacturing optics film chamber tectosome C1 not, so also can not make optics film chamber tectosome C1 even if be not pre-formed separating tank.
Also have, optics is with among the film chamber tectosome C1, and by laser radiation shape film forming chamber portion 2, the upper surface of this film chamber portion 2 becomes light transmission member rest portion 15a.Therefore, used the manufacture method of film chamber tectosome different, need not form the operation of the reinforcement of shelving the light transmission member in addition with former optics.
The manufacture method of-optics D1-
At first, shown in Fig. 6 (a) and Fig. 7 (a), with binding agent 122 optical element chip 121 that on chip rest portion 114, bonds.
Next, shown in Fig. 6 (b) and Fig. 7 (b), use 16 elecroconductive thin lines 123,123 ..., be electrically connected respectively the optical element chip 121 and second portion of terminal 116,116 ...At this moment, best is, uses conductive adhesive (not shown), with elecroconductive thin line 123,123 ... be connected in the optical element chip 121 and second portion of terminal 116,116 ...Thereafter, with elecroconductive thin line 123,123 ... seal with resin (not shown).
Next, shown in Fig. 6 (c) and Fig. 7 (c),, light transmission member 124 is bonded on the light transmission member rest portion 15a with binding agent (not shown).Thus, light transmission member 124 closely can be fixed on the light transmission member rest portion 15a.Do like this, can make optics D1.
And, use conductive adhesive, with the first terminal portion 112,112 ... be assembled into the defined place of wiring substrate, just can make the optical system semiconductor device.
And optics except that fixing means A, comprises that the method for the position of the first terminal the discerned portion with specific function also can with film chamber tectosome C1.Below, expression optics film chamber tectosome C101, C201.
＜distortion execution mode 1 〉
The optics of distortion execution mode 1 is represented with Fig. 8 with film chamber tectosome C101.Optics as long as look at the shape of the peristome 102a of film chamber portion, just can be known the position of the first terminal portion with specific function with among the film chamber tectosome C101.
Specifically, as shown in Figure 8, the contour shape of the peristome 102a of film chamber portion is non-point symmetry with respect to the approximate mid points of peristome 102a.At length say, peristome 102a, one forms circular arc (below, claim that circular arc summit 81a is " the non-point symmetry 81a of portion ") in four summits of rectangle.The non-point symmetry 81a of portion is formed on the outline portion of nearest peristome with the first terminal portion with specific function.For this reason, by from the peristome 102a unilateral observation optics film chamber C101 of portion, just know the position of the first terminal portion with specific function.
And the peristome contour shape of film chamber portion is not limited by above-mentioned record.The profile of peristome is for the shape that embeds approximate triangular prism in the summit in four summits of rectangle also can.
＜distortion execution mode 2 〉
The optics of distortion execution mode 2 is represented with Fig. 9 with film chamber tectosome C201.Optics as long as look at the upper surface of optics with film chamber tectosome C201, just can be known the position of the first terminal portion with specific function with among the film chamber tectosome C201.
Specifically, as shown in Figure 9, cave 91a is formed on the upper surface of optics with film chamber tectosome C201, near the 91a of this cave, is provided with the first terminal portion with specific function.For this reason, by the upper surface of viewing optics device, just know the position of the first terminal portion with specific function with the film chamber C201 of portion.
" working of an invention mode 2 "
In the execution mode 2, with Figure 10 and Figure 11, expression optics structure and the manufacture method of film chamber tectosome C2.Figure 10, the expression optics structural section of film chamber tectosome C2.Figure 11 represents the profile of optics with the part of the manufacturing process of film chamber tectosome C2.
The structure of-optics usefulness film chamber tectosome C2-
Optics is with film chamber tectosome C2, and is different with film chamber tectosome C1 with the optics of above-mentioned execution mode 1, as shown in figure 10, formed resist layer 31 on the surface of the 3rd insulator layer 15, and the upper surface of resist layer 31 is light transmission member rest portion 135.Like this because light transmission member rest portion 135 is surfaces of resist layer 31, so, optics with film chamber tectosome C2 can be closely fixing light transmission member 124.
At this, so-called " resist layer " is for the short circuit between antirust, the wiring that improves wiring prevents (insulation reliability keep) etc., and resistance to impact, moisture-proof, thermal endurance are formed on the most surperficial layer of substrate.The general material of resist layer is that hybrid epoxidized class hardened material forms in propylene resin, also plays the effect of insulator.
And, as long as at hacking the 3rd insulator layer surface on form resist layer 31, more can be closely fixing light transmission member 124, this is best.
The manufacture method of-optics usefulness film chamber tectosome C2-
At first, abide by Fig. 3 that above-mentioned execution mode 1 put down in writing and operation shown in Figure 4, make the mother metal substrate of optics with film chamber tectosome C2.
Next, in the central authorities of mother metal substrate, specifically, do not form on the mother metal substrate surface of tongue-shaped 16a of the 3rd metal level 16 parts irradiating laser in correspondence.Do like this, shown in Figure 11 (a), remove laser radiation the 3rd insulator layer 15 parts and second insulator layer, 13 parts that do not covered by the 3rd metal level 16.
Next, shown in Figure 11 (b), on the surface of the 3rd insulator layer 15, form resist layer 31.Thus, form light transmission member rest portion 135.
Thereafter, by carrying out the coating processing shown in Fig. 5 (c) that above-mentioned execution mode 1 put down in writing, optics usefulness film chamber tectosome C2 shown in Figure 10 can be made,, the optics (not shown) that comprises optics usefulness film chamber tectosome C2 can be made again by the operation of Figure 6 and Figure 7.
" working of an invention mode 3 "
In the execution mode 3, with Figure 12 to Figure 14, expression the optics structure of film chamber tectosome C3 and structure and the manufacture method of manufacture method and optics D3.Figure 12 is the profile of expression optics with the structure of film chamber tectosome C3.Figure 13 and Figure 14 are the profile of expression optics with the part of the manufacturing process of film chamber tectosome C3 and optics D3.
The structure of-optics usefulness film chamber tectosome C3-
Optics is with film chamber tectosome C3, and is different with film chamber tectosome C1 with the optics of above-mentioned execution mode 1, as shown in figure 12, and on the 3rd insulator layer 15, according to the sequential aggradation of the 4th metal level 52 and the 4th insulator layer 53.And what the 4th metal level 52 was best is the layer that is formed by copper (Cu), and what the 4th insulator layer 53 was best is the insulator layer that comprises the porous material with moisture absorbing.
The internal face of film chamber portion 4, each face, from the bottom surface to peristome, form according to the sequential aggradation of second insulator layer 13, the 3rd metal level 16, the 3rd insulator layer 15, the 4th metal level 52, the 4th insulator layer 53, formed add up to 16 first prominent establish portion 41,41 ... with one the second prominent portion 42 that establishes.First prominent establish portion 41,41 ..., on each internal face, respectively there are four, uniformly-spaced be provided with mutually, each all becomes a face respectively by three sides separately of second insulator layer 13 and the 3rd metal level 16 and forms.Second dashes forward establishes portion 42, is set to than each first prominent portion's 41 weak point of establishing, and three sides separately of the 3rd insulator layer 15 and the 4th metal level 52 become a face respectively and form.
The light transmission member rest portion 52a of present embodiment because be the second prominent surface of establishing portion 42, is formed in the film chamber portion 4.Therefore, optics is compared with film chamber tectosome C1 with optics with film chamber tectosome C3, and more small-sized optics can be provided.
The manufacture method of-optics usefulness film chamber tectosome C3-
At first Fig. 3 that is put down in writing by above-mentioned execution mode 1 and method shown in Figure 4 form the laminated body shown in Fig. 4 (e).
Next, on the surface of the 3rd insulator layer 15, form the 4th metal level 52, thereafter, on the major part on the 4th metal level 52 surfaces, form etching mask and carry out etching.Thus, shown in Figure 13 (a), near the periphery on the 3rd insulator layer 15 surfaces, can form the 4th metal level 52.
Next, on the 3rd insulator layer 15 surfaces of exposing of the surface of the 4th metal level 52 and Figure 13 (a), form the 4th insulator layer 53 by etching.Thus, can make the mother metal substrate S 3 of the optics shown in Figure 13 (b) with film chamber tectosome C3.
Next, the central authorities on these mother metal substrate S 3 surfaces, specifically, and on surface corresponding to the mother metal substrate S 3 of the peripheral part of the part that does not form the 3rd metal level 16, tongue-shaped 16a and tongue-shaped 16a, irradiating laser.Thus, shown in Figure 14 (a), second insulator layer, 13 parts that covered by the 3rd metal level 16 and the part of the 3rd insulator layer 15 are not removed, shape film forming chamber portion 4 and first prominent establish portion 41,41 ...Also have, the part of the 4th insulator layer 53 is removed and forms second and prominently establish portion 42, therefore, has formed light transmission member rest portion 52a.
Next, by carrying out the coating processing shown in Fig. 5 (c) that above-mentioned execution mode 1 put down in writing, can make optics shown in Figure 12 with film chamber tectosome C3.
Thereafter, shown in Figure 14 (b), usefulness binding agent 122 fixing optical element chip 121 on chip rest portion 114, usefulness elecroconductive thin line 123,123 ... be electrically connected second portion of terminal 116,116 ... with optical element chip 121.
And, shown in Figure 14 (c), on light transmission member rest portion 52a, shelve light transmission member 124.Thus, can make optics D3.
" working of an invention mode 4 "
In the execution mode 4, with Figure 15 to Figure 17, expression the optics structure of film chamber tectosome C4 and structure and the manufacture method of manufacture method and optics D4.Figure 15 is the profile of expression optics with the structure of film chamber tectosome C4.Figure 16 is the profile of expression optics with the part of the manufacturing process of film chamber tectosome C4.Figure 17 is the stereogram of optics D4.
The structure of-optics usefulness film chamber tectosome C4-
Optics is with film chamber tectosome C4, and is different with film chamber tectosome C1 with the optics of above-mentioned execution mode 1, as shown in figure 15, on the 3rd insulator layer 15, forms according to the sequential aggradation of the 4th metal level 72 and the 4th insulator layer 73.And what the 4th metal level 72 was best is the layer that is formed by copper (Cu), and what the 4th insulator layer 73 was best is to comprise the porous material with moisture absorbing.Also have, optics comprises the optics fitting portion 175 that replaces light transmission member rest portion with film chamber tectosome C4.
The inner wall part of film chamber portion 6, approximate identical with the inner wall part of the film chamber portion 2 of above-mentioned execution mode 1 record, each since the bottom surface to peristome, form according to the order lamination of second insulator layer 13, the 3rd metal level 16, the 3rd insulator layer 15.
Optics fitting portion 175 is parts of optics such as chimeric lens barrel, forms around film chamber portion 6.Its lower surface is the part of the 4th metal level 72.
The manufacture method of-optics usefulness film chamber tectosome C4-
At first, Fig. 3 that is put down in writing by above-mentioned execution mode 1 and method shown in Figure 4 form the laminated body shown in Fig. 4 (e).
Next, form the 4th metal level 72 on the surface of the 3rd insulator layer 15, thereafter, the central authorities on the 4th metal level 72 surfaces form etching mask and carry out etching.Thus, shown in Figure 16 (a), near the periphery on the 3rd insulator layer 15 surfaces, can form the 4th metal level 72.
Next, on the 3rd insulator layer 15 surfaces of exposing of the surface of the 4th metal level 72 and Figure 16 (a), form the 4th insulator layer 73 by etching.Thus, can make the mother metal substrate S 4 shown in Figure 16 (b).
Next, put down in writing according to above-mentioned execution mode 1, the central illumination laser on these mother metal substrate S 4 surfaces, shape film forming chamber portion 6 and prominent establish portion 21,21 ...Also have, irradiating laser is removed the part of the 4th insulator layer 73 on the surface perimeter of mother metal substrate S 4, exposes the 4th metal level 72.Therefore, formed optics fitting portion 175.
By carry out coating processing Fig. 5 (c) that above-mentioned execution mode 1 put down in writing shown in, can make shown in Figure 15 optics with film chamber tectosome C4 thereafter.
And, with binding agent fixing optical element chip 121 on chip rest portion 114, with elecroconductive thin line 123,123 ... be electrically connected second portion of terminal 116,116 ... with optical element chip 121, on optics fitting portion 175, shelve optics (not shown).Thus, can make optics D4 shown in Figure 17.
" working of an invention mode 5 "
In the execution mode 5, with Figure 18 to Figure 20, expression optics structure and the manufacture method of film chamber tectosome C5.Figure 18 and Figure 19 are the profile of expression optics with the manufacturing process of film chamber tectosome C5.Figure 20 is the stereogram of expression optics with the back side one side of film chamber tectosome C5.
-optics the structure one of film chamber tectosome C5
Optics is with film chamber tectosome C5, and is different with film chamber tectosome C1 with the optics of above-mentioned execution mode 1, between the first metal layer 12 and first insulator layer 11, lamination fixture (standoff) with insulator layer 93 and fixture with metal level 92.And, fixture with metal level 92 best be the layer that forms by copper (Cu), fixture with insulator layer 93 best be the insulator layer that comprises porous material with moisture absorbing.
The internal face of film chamber portion 8, the internal face of the film chamber portion 2 that is put down in writing with above-mentioned execution mode 1 is approximate identical, each be from ground to peristome, the lamination that has deposited according to the order of second insulator layer 13, the 3rd metal level 16, the 3rd insulator layer 15 forms.
The first terminal portion 94 as shown in figure 20, is made of with insulator layer 93 and the first metal layer 12 fixture, forms with metal level 92 prominent establishing from fixture.For this reason, different with above-mentioned optics with film chamber tectosome C1, C2, C3, C4, optics closely can be fixed on the substrate that connects up with film chamber tectosome C5.
The manufacture method of-optics usefulness film chamber tectosome C5-
At first, shown in Figure 18 (a), on the upper surface of first insulator layer 11, form second metal level 14, at the lower surface formation fixture metal level 92 of first insulator layer 11.
Next, although not shown, fixture forms etching mask with the part of the lower surface of metal level 92, etching fixture metal level 92.Thus, shown in Figure 18 (b), fixture remains in the central authorities of fixture with metal level 92 back sides with metal level 92.
Next, shown in Figure 18 (c), on the back side of fixture with the back side of metal level 92 and first insulator layer 11 that exposes by the etching among Figure 18 (b), form fixture with insulator layer 93, form the first metal layer 12 at fixture with the back side of insulator layer 93.
Next, by Fig. 3 (d) and the approximately uniform method of Fig. 3 (e) put down in writing with above-mentioned execution mode 1, form coating 102, resin bed 103, bending and prevent with recess 12a and etched part 14a.Thus, can form the laminated body shown in Figure 18 (d).
, abide by shown in Figure 4 operation that above-mentioned execution mode 1 put down in writing, form the mother metal substrate of optics with film chamber tectosome C5 thereafter.
Then, at the surface and the back side illuminaton laser of this mother metal substrate.At this moment, use and the irradiation of the approximately uniform method of the laser irradiating method of above-mentioned execution mode 1, go up the approximately uniform laser of exposure intensity to whole of the back side of mother metal substrate to the surface of mother metal substrate.By back side illuminaton laser to the mother metal substrate, remove the part that the fixture that does not form the first metal layer 12 is used insulator layer 93, its result exposes fixture metal level 92.
And, carry out coating processing shown in the Fig. 5 (c) that is put down in writing by above-mentioned execution mode 1, formation the first terminal portion 94, chip rest portion 114, the first terminal portion 94 and second portion of terminal 116,116 ..., just can make the film chamber tectosome C5 of the optics shown in Figure 19 (b).
" working of an invention mode 6 "
In the execution mode 6, with Figure 21 to Figure 27, expression the optics structure of film chamber tectosome C6 and structure and the manufacture method of manufacture method and optics D6.Figure 21 and Figure 22, each figure are stereogram and the profile of expression optics with the structure of film chamber tectosome C6.And Figure 22 (a) is the profile of IIA-IIA line shown in expression Figure 22 (b).Figure 23 to Figure 25 is the profile of expression optics with the manufacturing process of film chamber tectosome C6.Figure 26 and Figure 27 are the profile and the stereogram of the manufacturing process of expression optics D6.
The structure of-optics usefulness film chamber tectosome C6-
Optics film chamber tectosome C6, as Figure 21 and shown in Figure 22, from be assembled in the wiring substrate assembling face (lower surface of Figure 21) according to the first metal layer 12, the crooked prevention with insulator layer 19, the crooked prevention with metal level 18, first insulator layer 11, second metal level 14, second insulator layer 13, the 3rd metal level 16, the sequential aggradation of the 3rd insulator layer 15 forms, and comprising: film chamber portion 2,16 second portion of terminal 116,116, chip rest portion 114, light transmission member rest portion 15a, 16 the first terminal portions 112,112, the first solar heat protection portion 118 and the second solar heat protection portion 106.And crooked the prevention with insulator layer 19, first insulator layer 11, second insulator layer 13 and the 3rd insulator layer 15, best is that each all comprises the porous material (not shown) with moisture absorbing.Thus, optics has the knot mist and prevents function with film chamber tectosome C6.Also have, the first metal layer 12, the crooked prevention with metal level 18, second metal level 14 and the 3rd metal level 16, best is that each all is the layer that is formed by copper (Cu).Thus, just can make optics film chamber tectosome C6 by irradiating laser.
Film chamber portion 2 shown in Figure 22 (a), has the approximate rectangular peristome 2a of upper face center portion, cuts out to become to be similar to regular cube formation.The bottom surface shown in Figure 22 (a), is implemented coating 104 at the upper surface of second metal level, 14 central authorities and is formed.Also have, internal face, each leisure, forms according to the sequential aggradation of second insulator layer 13, the 3rd metal level 16, the 3rd insulator layer 15 to the direction of peristome 2a from the bottom surface, formed add up to 16 prominent establish portion 21,21 ...Prominent establish portion 21,21 ..., on each internal face, form four respectively, become equidistant setting mutually, the side of three directions of each second insulator layer 13 and the 3rd metal level 16 becomes same plane separately.
Second portion of terminal 116,116 ..., as Figure 21 and shown in Figure 23, coating 104 film chamber portion 2 prominent establish portion 21,21 ... in implement to form on the upper surface of the 3rd metal level 16 and the side.
Chip rest portion 114, shown in Figure 22 (a), the bottom surface coating 104 of film chamber portion 2 is implemented to form, the record of second inscape as previously discussed, best is that profile pattern is good, specifically, forms Rz below 5 μ m more than the 1 μ m.Thus, can make approximate parallel the setting aside on the chip rest portion 114 of optical element chip 121 and assembling face.So, can not have obliquely optical elements such as lens barrel carried on the optics of having shelved optical element chip 121 on the chip rest portion 114.
Also have, chip rest portion 114, the chip rest portion 114 and second portion of terminal 116,116 ... the distance of upper surface form below the thickness of optical element chip 121, this distance forms the following form of the above 575 μ m of 50 μ m.And, if this distance if shorter than 50 μ m, the thickness of second insulator layer 13 will become thin and second insulator layer 13 is set just became very difficult.Also have, if this distance is longer than 575 μ m, and the optical surface of the ratio optical element chip 121 that the upper surface of each second portion of terminal 116 will be provided with is higher.Its result, by elecroconductive thin line 123,123 ... the light of diffuse reflection (irregular reference) is received by optical element chip 121, from the light of optical element chip 121 emission by elecroconductive thin line 123,123 ... surface diffuse reflectance (irregular reference) penetrate with film chamber tectosome C6 from optics.By above reason, what this distance was best is to form below the above 575 μ m of 50 μ m.At this, the thickness of the actual optical element chip 121 that uses, maximum is any value of the following scope of the above 200 μ m of 100 μ m.
Light transmission member rest portion 15a as shown in figure 21, is at least a portion of the upper surface of the 3rd insulator layer 15, comprises the fixing means of fixing light transmission member 124 described later.At this, the upper surface of the 3rd insulator layer 15 that fixing means is a hacking.Thus, light transmission member 124 tight bond can be fixed in light transmission member rest portion 15a.And, the method of the upper surface of this hacking the 3rd insulator layer 15 is not defined, as long as hacking becomes this surperficial Rz below 20 μ m more than the 5 μ m, being preferably hacking is that Rz is below 20 μ m more than the 10 μ m, be better hacking be Rz below 20 μ m more than the 15 μ m, just can make light transmission member 124 firm best and closely be bonded on the light transmission member rest portion 15a.Also have, as long as shelving light transmission member 124 behind the coating binding agent on the light transmission member rest portion 15a, just can be with light transmission member 124 firm better and bonding closely, this will be better.
The first terminal portion 112,112 ..., each all with above-mentioned execution mode 1 in put down in writing the first terminal portion 112,112 ... the same.Just, the first terminal portion 112,112 ..., on each limit of each assembling face, there are four respectively, equally spaced be provided with mutually, shown in Figure 22 (a), implement coating 102 on the surface of the first metal layer 12, implement coating 104 again on coating 102 surfaces and form.And coating 102,104 all is to form at surface deposition gold (Au) layer of nickel (Ni) layer.
The first terminal portion 112,112 ... with second portion of terminal 116,116 ..., all be electrically connected separately then.Specifically, add up to 16 through holes 101,101 ... (shown in Figure 23 (b)), each all connects the first metal layer 12, insulator layer 19, the crooked prevention and forms with metal level 18, first insulator layer 11 and second metal level 14, on the surface of the internal face of each through hole 101, the first metal layer 12 and the surface of second metal level 14, implemented coating 102.Also have, on second insulator layer 13, add up to 16 etched part 13a, 13a ... (shown in Figure 24 (b)), each leisure than through hole 101,101 ... the outside, with through hole 101,101 ... form relatively.Just, shown in Figure 22 (a), among each etched part 13a, second metal level 14 and the 3rd metal level 16 interconnect.From the above mentioned, each the first terminal portion 112 is electrically connected with second metal level 14 between coating 102, and second metal level 14 in each etched part 13a, is electrically connected with the 3rd metal level 16.Thus, each the first terminal portion 112 is electrically connected with each second portion of terminal 116.
And, the ratio through hole 101,101 of second insulator layer 13 ... the inside has formed the approximate etched part 14a (shown in Figure 23 (e)) that becomes " mouth " shape in bottom surface.For this reason, chip rest portion 114 is not electrically connected with each the first terminal portion 112.Also have, coating 102 inboards of each through hole 101 have formed resin portion 103.
Below, sum up the effect that optics is risen with film chamber tectosome C6.
Light transmission member 124 closely can be fixed on the light transmission member rest portion 15a.
Light that optical element chip 121 receives or the light that sends can be by elecroconductive thin lines 123,123 ... the surface stop diffuse reflection (irregular reference).
Because the formation of film chamber portion 2 just can prevent the optics bending of film chamber tectosome C6 to assembling face one side.
Because good hygroscopicity, the light transparent member knot mist that can prevent to shelve.
Optics in the past because light transmission member or optics are left optical element chip setting, is necessary so reinforcement (rib) is set with in the tectosome of film chamber.On the other hand, optics is with among the film chamber tectosome C6, because second and third insulator layer 13,15 and the 3rd metal level 16 of chip rest portion 114 top laminations can play the effect of reinforcement, so just there is no need specially reinforcement to be set.
Have, optics is with among the film chamber tectosome C6 again, and crooked the prevention with metal level 18 is arranged on than chip rest portion 114 more by assembling face one side.For this reason, more can prevent from the bending of chip rest portion 114 from just can make optical surface approximate parallel with film chamber tectosome C1, optical element chip 121 is set aside on the chip rest portion 114 with respect to assembling face than the optics of above-mentioned execution mode 1.
Also have, optics is with film chamber tectosome C6, because comprise first heat unit 118 and the second solar heat protection portion 106, so anti-hot good optics can be provided.
The structure of-optics D6-
Shown in Figure 26 (c) and Figure 27 (c), optics D6 comprises optics film chamber tectosome C6, optical element chip 121, light transmission member 124.Optical element chip 121 is to be fixed on photo detector or light-emitting component on the chip rest portion 114 between binding agent 122, between elecroconductive thin line 123,123 ... with each second portion of terminal 116,116 ... connect.Light transmission member 124 is to be resting on the light transmission member rest portion 15a, and the parts that light is seen through more than 70% are preferably the parts that light is seen through more than 80%, and best is the parts that light is seen through more than 90%.Be the plate of glass specifically.
With this optics D6 be assembled into the wiring substrate on, between the first terminal portion 112,112 ..., second portion of terminal 116,116 ... and elecroconductive thin line 123,123 ..., on optical element chip 121, apply voltage.Thus, optical element chip 121 is luminous, and the light that sends sees through light transmission member 124 and penetrates optics D6.Also have, the light that sees through light transmission member 124 is received by optical element chip 121.
Like this, optics D6 because be to have shelved optical element chip 121 or light transmission member 124 on film chamber tectosome C6 at above-mentioned optics, thus play and optics with the approximately uniform effect of film chamber tectosome C6.
The manufacture method of-optics usefulness film chamber tectosome C6-
Abide by after Figure 23 (a) made mother metal substrate S 6 to the operation shown in Figure 24 (e), by carrying out the laser radiation shown in Figure 25 (a), the formation operation of the second solar heat protection portion 106 shown in Figure 25 (b) is thereafter made the film chamber tectosome of the optics shown in Figure 25 (a).Below, concrete narration.
1. the formation operation of mother metal substrate S 6
At first, shown in Figure 23 (a),, form the first metal layer 12 at the lower surface of insulator layer 19.Also have, on the upper surface of insulator layer 19, stop sequential aggradation to form with metal level 18, first insulator layer 11 and second metal level 14 according to bending.
Next, at the lower surface of the first metal layer 12 or the upper surface of second metal level 14, on its face with each personal laser radiation is everywhere on each bar line on the approximately parallel straight line in each limit.Thus, shown in Figure 23 (b), 16 through hole portions 101,101 of formation total ...
Next, shown in Figure 23 (c), on the surface of the upper surface of the lower surface of the first metal layer 12, second metal level 14 and each through hole portion 101, form gold (Au) layer on the surface of this nickel (Ni) layer again after forming nickel (Ni) layer, implement coating 102.
Next, shown in Figure 23 (d), on inwall, implemented to inject resin in each through hole portion 101 of coating 102, formed resin portion 103.And, on each resin portion 103 on coating 102 surfaces, implement not shown coating.
Next, on the part of the part of the first metal layer 12 lower surfaces that formed coating 102 and second metal level, 14 upper surfaces that formed coating 102, form etching mask, the part of the part of etching the first metal layer 12 and second metal level 14.Thus, shown in Figure 23 (e), the first metal layer 12 adds up to 16 places by remaining everywhere on each limit of the lower surface of insulator layer 19, and the etched part 12a of approximate " mouth " shape is formed on than resin portion 103 more in the inner part.Thus, formed the first solar heat protection portion 118.On second metal level 14, the etched part 14a that is approximately " mouth " shape is formed the etched part 12a corresponding to the first metal layer 12.
Next, shown in Figure 24 (a), formed on second metal level, 14 upper surfaces of coating 102 and formed second insulator layer 13 in the etched part 14a.
Next, the part at second insulator layer, 13 upper surfaces forms etching mask, etching second insulator layer 13.Thus, shown in Figure 24 (b), 16 etched part 13a, 13a ..., be formed on more lateral separately than resin portion 103, corresponding with resin portion 103.
Next, shown in Figure 24 (c), on the upper surface of the upper surface of second insulator layer 13 and each etched part 13a, form the 3rd metal level 16.
Next, the part on the 3rd metal level 16 surfaces forms etching mask and carries out etching.Thus, shown in Figure 24 (d), when the middle body of the 3rd metal level 16 is etched into approximate rectangular shape, on the etched part (etched part), add up to 16 tongue-shaped 16a, 16a ... not etched and remaining.Tongue-shaped 16a, 16a ..., each all is to extend to the inside from each limit of etched part, respectively has four on each limit of etched part, equidistantly forms mutually.
Next, shown in Figure 24 (e), on the surface of the 3rd metal level 16 and second insulator layer, 13 parts exposed by etching, form the 3rd insulator layer 15.Thus, can form mother metal substrate S 6.
2. laser radiation operation
At first, on mother metal substrate S 6 surfaces shown in Figure 24 (e) on the whole, irradiating laser.Specifically, in the central authorities on mother metal substrate S 6 surfaces, just on the surface corresponding to the mother metal substrate S 6 of the part that does not form the 3rd metal level 16 and each tongue-shaped 16a, the laser that irradiating laser intensity is strong relatively.At this moment, metal level is as the work of laser barrier layer, and insulator layer is removed by the irradiation of laser.Therefore, shown in Figure 25 (a), remove not second insulator layer, 13 parts that covered by the 3rd metal level 16 and the part of the 3rd insulator layer 15, its result, formed film chamber portion 2 and prominent establish portion 21,21 ...And, strong relatively laser, best is to make the surface of second metal level 14 become the laser irradiation condition of Rz below 5 μ m more than the 1 μ m.
Also have, on the periphery of mother metal substrate S 6 upper surfaces, the laser that irradiating laser intensity is weak relatively.By the irradiation of this laser, be not removed and remaining the 3rd insulator layer 15 upper surfaces are become light transmission member rest portion 15a by hacking.
3. the second solar heat protection portion 106 forms operation
Through with Figure 23 (c) to the approximately uniform operation of operation shown in Figure 23 (e), form the second solar heat protection portion 106.Specifically, at first by operation shown in Figure 25 (a) on the surface or the surface of the first solar heat protection portion 118 of second metal level, 14 parts of exposing, irradiating laser.Thus, form the first solar heat protection portion 118 of perforation, insulator layer 19, the crooked through hole (not shown) that stops with metal level 18, first insulator layer 11 and second metal level 14.Next, implement coating at the sidewall of through hole.Thus, form the second solar heat protection portion 106., on sidewall formed through hole inner the inject resin of second solar heat protection portion 106, formed resin portion 103 thereafter.
Thereafter, the lower surface of the first metal layer 12 parts beyond the first solar heat protection portion 118 is implemented coating 104 and is formed the first terminal portion 112.Also have, the coating 104 of being implemented on the upper surface of exposed portions serve of second metal level 14 forms chip rest portion 114.Also have, tongue-shaped 16a, 16a ... upper surface on implement coating 104, form second portion of terminal 116,116 ...
And, on etched part 12b, form insulation division 17.Thus, can make optics film chamber tectosome C6.
The manufacture method of-optics D6-
At first, shown in Figure 26 (a) and Figure 27 (a), with binding agent 122 optical element chip 121 that on chip rest portion 114, bonds.
Next, shown in Figure 26 (b) and Figure 27 (b), use 16 elecroconductive thin lines 123,123 ..., be electrically connected respectively the optical element chip 121 and second portion of terminal 116,116 ...At this moment, best is, uses conductive adhesive (not shown), with elecroconductive thin line 123,123 ... be connected in the optical element chip 121 and second portion of terminal 116,116 ...Thereafter, with elecroconductive thin line 123,123 ... seal with resin (not shown).
Next, shown in Figure 26 (c) and Figure 27 (c),, light transmission member 124 is bonded on the light transmission member rest portion 15a with binding agent (not shown).Thus, light transmission member 124 closely can be fixed on the light transmission member rest portion 15a.Do like this, can make optics D6.
And, use conductive adhesive, with the first terminal portion 112,112 ... be assembled into the defined place of wiring substrate, just can make the semiconductor device of optical system.
And optics except that fixing means A, can also comprise the method for the position of the first terminal the discerned portion with specific function with film chamber tectosome C6.Below, expression optics film chamber tectosome C106, C206.
＜distortion execution mode 1 〉
The optics of distortion execution mode 1 is represented with Figure 28 with film chamber tectosome C106.Optics as long as look at the shape of the peristome 102a of film chamber portion, just can be known the position of the first terminal portion with specific function with among the film chamber tectosome C106.
Specifically, as shown in figure 28, the contour shape of the peristome 102a of film chamber portion is non-point symmetry with respect to the approximate mid points of peristome 102a.At length say, peristome 102a, one forms circular arc (below, claim that circular arc summit 81a is " the non-point symmetry 81a of portion ") in four summits of rectangle.The non-point symmetry 81a of portion is formed on the outline portion of nearest peristome with the first terminal portion with specific function.For this reason, by from the peristome 102a unilateral observation optics film chamber C106 of portion, just know the position of the first terminal portion with specific function.
And the peristome contour shape of film chamber portion is not limited by above-mentioned record.The profile of peristome, the shape that embeds approximate triangular prism in the summit in four summits of rectangle also can.
＜distortion execution mode 2 〉
The optics of distortion execution mode 2 is represented with Figure 29 with film chamber tectosome C202.Optics as long as look at the upper surface of optics with film chamber tectosome C206, just can be known the position of the first terminal portion with specific function with among the film chamber tectosome C206.
Specifically, as shown in figure 29, cave 91a is formed on the upper surface of optics with film chamber tectosome C206, near the 91a of this cave, is provided with the first terminal portion with specific function.For this reason, by the upper surface of viewing optics device, just know the position of the first terminal portion with specific function with the film chamber C206 of portion.
" working of an invention mode 7 "
In the execution mode 7, use Figure 30, the expression optics structure of film chamber tectosome C7.Figure 30, the expression optics structural section of film chamber tectosome C7.
The structure of-optics usefulness film chamber tectosome C7-
Optics is with film chamber tectosome C7, and is different with film chamber tectosome C6 with the optics of above-mentioned execution mode 6, formed resist layer 31 on the surface of the 3rd insulator layer 15, and the upper surface of resist layer 31 is light transmission member rest portion 135.Like this because light transmission member rest portion 135 is surfaces of resist layer 31, so, optics with film chamber tectosome C7 can be closely fixing light transmission member 124.
At this, so-called " resist layer " is for the short circuit between antirust, the wiring that improves wiring prevents (insulation reliability keep) etc., and resistance to impact, moisture-proof, thermal endurance are formed on the most surperficial layer of substrate.The general material of resist layer is that hybrid epoxidized class hardened material forms in propylene resin, also plays the effect of insulator.
The manufacture method of-optics usefulness film chamber tectosome C7-
Optics is with the manufacture method of film chamber tectosome C7, is the method that optics at above-mentioned execution mode 6 forms resist layer 31 on the 3rd insulator layer 15 surfaces of film chamber tectosome C6.And, laser, the central authorities of only shining the mother metal substrate surface get final product.
" working of an invention mode 8 "
In the execution mode 8, with Figure 31 to Figure 33, expression the optics structure of film chamber tectosome C8 and structure and the manufacture method of manufacture method and optics D8.Figure 31 is the profile of expression optics with the structure of film chamber tectosome C8.Figure 32 and Figure 33 are the expression optics with the profile of the manufacturing process of the manufacturing process of film chamber tectosome C8 and optics D8.
The structure of-optics usefulness film chamber tectosome C8-
Optics is with film chamber tectosome C8, and is different with film chamber tectosome C6 with the optics of above-mentioned execution mode 6, as shown in figure 31, and on the 3rd insulator layer 15, according to the sequential aggradation of the 4th metal level 52 and the 4th insulator layer 53.And what the 4th metal level 52 was best is the layer that is formed by copper (Cu), and what the 4th insulator layer 53 was best is the insulator layer that comprises the porous material with moisture absorbing.
The internal face of film chamber portion 4, each face, from the bottom surface to peristome, form according to the sequential aggradation of second insulator layer 13, the 3rd metal level 16, the 3rd insulator layer 15, the 4th metal level 52, the 4th insulator layer 53, formed add up to 16 first prominent establish portion 41,41 ... with one the second prominent portion 42 that establishes.First prominent establish portion 41,41 ..., on each internal face, respectively there are four, uniformly-spaced be provided with mutually, each all becomes a face respectively by three sides separately of second insulator layer 13 and the 3rd metal level 16 and forms.The second prominent portion 42 that establishes, each first prominent portion 41 that establishes of the ratio of setting also lacks, and three sides separately of the 3rd insulator layer 15 and the 4th metal level 52 become one side respectively.
The light transmission member rest portion 52a of present embodiment because be the second prominent surface of establishing portion 42, is formed in the film chamber portion 4.Therefore, optics is compared with film chamber tectosome C6 with optics with film chamber tectosome C8, and small-sized optics can be provided.
The manufacture method of-optics usefulness film chamber tectosome C8-
At first Figure 23 that is put down in writing by above-mentioned execution mode 6 and method shown in Figure 24 form the laminated body shown in Figure 24 (e).
Next, on the surface of the 3rd insulator layer 15, form the 4th metal level 52, thereafter, on the major part on the 4th metal level 52 surfaces, form etching mask and carry out etching.Thus, shown in Figure 32 (a), near the periphery on the 3rd insulator layer 15 surfaces, can form the 4th metal level 52.
Next, on the 3rd insulator layer 15 surfaces of exposing of the surface of the 4th metal level 52 and Figure 33 (a), form the 4th insulator layer 53 by etching.Thus, can make the mother metal substrate S 8 of the optics shown in Figure 32 (b) with film chamber tectosome C8.
Next, the central authorities on these mother metal substrate S 8 surfaces, specifically, and on surface corresponding to the mother metal substrate S 8 of the peripheral part of the part that does not form the 3rd metal level 16, tongue-shaped 16a and tongue-shaped 16a, irradiating laser.Thus, shown in Figure 33 (a), second insulator layer, 13 parts that covered by the 3rd metal level 16 and the part of the 3rd insulator layer 15 are not removed, shape film forming chamber portion 2 and first prominent establish portion 41,41 ...Also have, the part of the 4th insulator layer 53 is removed a part of exposing the 4th metal level 52, thus, has formed light transmission member rest portion 52a.
Next, by carrying out the coating processing shown in Figure 25 (c) that above-mentioned execution mode 6 put down in writing, can make optics shown in Figure 31 with film chamber tectosome C8.
Thereafter, shown in Figure 33 (b), usefulness binding agent 122 fixing optical element chip 121 on chip rest portion 114, usefulness elecroconductive thin line 123,123 ... be electrically connected second portion of terminal 116,116 ... with optical element chip 121.
And, shown in Figure 33 (c), on light transmission member rest portion 52a, shelve light transmission member 124.Thus, can make optics D8.
" working of an invention mode 9 "
In the execution mode 9, with Figure 34 to Figure 36, expression the optics structure of film chamber tectosome C9 and structure and the manufacture method of manufacture method and optics D9.Figure 34 is the profile of expression optics with the structure of film chamber tectosome C9.Figure 35 is the profile of expression optics with the part of the manufacturing process of film chamber tectosome C9.Figure 36 is the stereogram of optics D9.
The structure of-optics usefulness film chamber tectosome C9-
Optics is with film chamber tectosome C9, and is different with film chamber tectosome C6 with the optics of above-mentioned execution mode 6, as shown in figure 34, on the 3rd insulator layer 15, forms according to the sequential aggradation of the 4th metal level 72 and the 4th insulator layer 73.And what the 4th metal level 72 was best is the layer that is formed by copper (Cu), and what the 4th insulator layer 73 was best is to comprise the porous material with moisture absorbing.Also have, optics comprises the optics fitting portion 175 that replaces light transmission member rest portion with film chamber tectosome C9.
The inner wall part of film chamber portion 6, approximate identical with the inner wall part of the film chamber portion 2 of above-mentioned execution mode 6 records, each since the bottom surface to peristome, form according to the sequential aggradation of second insulator layer 13, the 3rd metal level 16, the 3rd insulator layer 15.
Optics fitting portion 175 is parts of optics such as chimeric lens barrel, forms around film chamber portion 6.Its lower surface is the part of the 4th metal level 72.
The manufacture method of-optics usefulness film chamber tectosome C9-
At first Figure 23 that is put down in writing by above-mentioned execution mode 6 and method shown in Figure 24 form the laminated body shown in Figure 24 (e).
Next, form the 4th metal level 72 on the surface of the 3rd insulator layer 15, thereafter, the central authorities on the 4th metal level 72 surfaces form etching mask and carry out etching.Thus, shown in Figure 25 (a), near the periphery on the 3rd insulator layer 15 surfaces, can form the 4th metal level 72.
Next, on the 3rd insulator layer 15 surfaces of exposing of the surface of the 4th metal level 72 and Figure 25 (a), form the 4th insulator layer 73 by etching.Thus, can make the mother metal substrate S 9 shown in Figure 25 (b).
Next, put down in writing according to above-mentioned execution mode 6, the central illumination laser on these mother metal substrate S 9 surfaces, shape film forming chamber portion 6 and prominent establish portion 21,21 ...Also have, irradiating laser is removed the part of the 4th insulator layer 73 on the surface perimeter of mother metal substrate S 4, exposes the 4th metal level 72.Therefore, formed optics fitting portion 175.
By carry out coating processing Figure 25 (c) that above-mentioned execution mode 6 put down in writing shown in, can make shown in Figure 34 optics with film chamber tectosome C9 thereafter.
And, with binding agent fixing optical element chip 121 on chip rest portion 114, with elecroconductive thin line 123,123 ... be electrically connected second portion of terminal 116,116 ... with optical element chip 121, on optics fitting portion 175, shelve optics (not shown).Thus, can make optics D9 shown in Figure 36.
" working of an invention mode 10 "
In the execution mode 10, with Figure 37 to Figure 39, expression optics structure and the manufacture method of film chamber tectosome C10.Figure 37 and Figure 38 are the profile of expression optics with the manufacturing process of film chamber tectosome C10.Figure 39 is the stereogram of expression optics with the back side one side of film chamber tectosome C10.
The structure of-optics usefulness film chamber tectosome C10-
Optics film chamber tectosome C10, different with the optics of above-mentioned execution mode 6 with film chamber tectosome C6, do not comprise the first solar heat protection portion 118 and the second solar heat protection portion 106, but, between the first metal layer 12 and first insulator layer 11, lamination fixture (stand off) with insulator layer 93 and fixture with metal level 92.And, fixture with metal level 92 best be the layer that forms by copper (Cu), fixture with insulator layer 93 best be the insulator layer that comprises porous material with moisture absorbing.
The internal face of film chamber portion 8, the internal face of the film chamber portion 2 that is put down in writing with above-mentioned execution mode 6 is approximate identical, each be from ground to peristome, the lamination that has deposited according to the order of second insulator layer 13, the 3rd metal level 16, the 3rd insulator layer 15 forms.
The first terminal portion 94 as shown in figure 39, is made of with insulator layer 93 and the first metal layer 12 fixture, forms with metal level 92 prominent establishing from fixture.For this reason, different with above-mentioned optics with film chamber tectosome C6, C7, C8, C9, optics closely can be fixed on the substrate that connects up with film chamber tectosome C10.
The manufacture method of-optics usefulness film chamber tectosome C10-
At first, shown in Figure 37 (a), formation is crooked on the upper surface of insulator layer 19 stops with metal level 18, at the lower surface formation fixture metal level 92 of insulator layer 19.
Next, although not shown, fixture forms etching mask with the part of the lower surface of metal level 92, etching fixture metal level 92.Thus, shown in Figure 37 (b), fixture remains in the central authorities of fixture with metal level 92 back sides with metal level 92.
Next, shown in Figure 37 (c), the crooked prevention with the order according to first insulator layer 11, second metal level 14 on the upper surface of metal level 18 forms lamination.Also have, on the lower surface of fixture, form fixture with insulator layer 93 with the lower surface of metal level 92 and first insulator layer 11 that exposes by the etching among Figure 37 (b), at fixture with formation the first metal layer 12 on the lower surface of insulator layer 93.
Next, by the approximately uniform method of being put down in writing with above-mentioned execution mode 6 of Figure 23 (d), form coating 102 and resin bed 103.Form etching mask, etching the first metal layer 12 and second metal level 14 in the part of the first metal layer 12 lower surfaces and the part of second metal level, 14 upper surfaces.Thus, shown in Figure 37 (d), in the first metal layer 12, most of etched central authorities have formed crooked prevention recess 12a, and each has been left everywhere and and 16 places on each limit of the lower surface of second insulator layer 13.Also have, on second metal level 14, at the etched part 14a that has formed approximate " mouth " shape than each resin portion 103 more in the inner part.
, abide by shown in Figure 24 operation that above-mentioned execution mode 6 put down in writing, form the mother metal substrate of optics with film chamber tectosome C10 thereafter.
Then, at the surface and the back side illuminaton laser of this mother metal substrate.At this moment, use and the irradiation of the approximately uniform method of the laser irradiating method of above-mentioned execution mode 6, go up the approximately uniform laser of exposure intensity to whole of the back side of mother metal substrate to the surface of mother metal substrate.By back side illuminaton laser to the mother metal substrate, remove the part that the fixture that does not form the first metal layer 12 is used insulator layer 93, its result exposes fixture metal level 92.
And, carry out coating processing shown in the Figure 25 (c) that is put down in writing by above-mentioned execution mode 6, formation the first terminal portion 94, chip rest portion 114, the first terminal portion 94 and second portion of terminal 116,116 ..., just can make the film chamber tectosome C10 of the optics shown in Figure 38 (b).
" working of an invention mode 11 "
In the execution mode 6, with Figure 40 to Figure 46, expression the optics structure of film chamber tectosome C11 and structure and the manufacture method of manufacture method and optics D11.Figure 40 and Figure 41, each figure are stereogram and the profile of expression optics with the structure of film chamber tectosome C11.And Figure 41 (a) is the profile of IIA-IIA line shown in expression Figure 41 (b).Figure 42 to Figure 44 is the profile of expression optics with the manufacturing process of film chamber tectosome C11.Figure 45 and Figure 46 are the profile and the stereogram of the manufacturing process of expression optics D11.
The structure of-optics usefulness film chamber tectosome C11-
Optics film chamber tectosome C11, as Figure 40 and shown in Figure 41, form according to the sequential aggradation of the first metal layer 12, first insulator layer 11, second metal level 14, second insulator layer 13, the 3rd metal level 16, the 3rd insulator layer 15 from the assembling face (lower surface of Figure 40) that is assembled in the wiring substrate, comprising: 2,16 second portion of terminal 116,116 of film chamber portion ..., chip rest portion 114, light transmission member rest portion 15a, 16 the first terminal portions 113,113 ...And, first insulator layer 11, second insulator layer 13 and the 3rd insulator layer 15, best is that each all comprises the porous material (not shown) with moisture absorbing.Thus, optics has the knot mist and prevents function with film chamber tectosome C11.Also have, the first metal layer 12, second metal level 14 and the 3rd metal level 16, best is that each all is the layer that is formed by copper (Cu).Thus, just can make optics film chamber tectosome C11 by irradiating laser.
Film chamber portion 2 as shown in figure 40, has the optics film chamber approximate rectangular peristome 2a of tectosome C11 upper face center portion, cuts out to become to be similar to regular cube formation.The bottom surface as shown in figure 41, is implemented coating 104 at the upper surface of second metal level, 14 central authorities and is formed.Also have, internal face, each leisure, forms according to the sequential aggradation of second insulator layer 13, the 3rd metal level 16, the 3rd insulator layer 15 on the direction of peristome 2a from the bottom surface, formed add up to 16 prominent establish portion 21,21 ...Prominent establish portion 21,21 ..., on each internal face, form four respectively, become equidistant setting mutually, the side of three directions of each second insulator layer 13 and the 3rd metal level 16 becomes same plane separately.
Second portion of terminal 116,116 ..., as Figure 21 and shown in Figure 23, coating 104 film chamber portion 2 prominent establish portion 21,21 ... in implement to form on the upper surface of the 3rd metal level 16 and the side.
Chip rest portion 114, as shown in figure 40, the bottom surface coating 104 of film chamber portion 2 is implemented to form, the record of second inscape as previously discussed, best is that profile pattern is good, specifically, the Rz that forms the surface is below 5 μ m more than the 1 μ m.Thus, can make approximate parallel the setting aside on the chip rest portion 114 of optical element chip 121 and assembling face.So, can not have obliquely optical elements such as lens barrel carried on the optics of having shelved optical element chip 121 on the chip rest portion 114.
Also have, chip rest portion 114, the chip rest portion 114 and second portion of terminal 116,116 ... the distance of upper surface form below the thickness of optical element chip 121, this distance forms the following form of the above 575 μ m of 50 μ m.And, if this distance if shorter than 50 μ m, the thickness of second insulator layer 13 will become thin and second insulator layer 13 is set just became very difficult.Also have, if this distance is longer than 575 μ m, and the optical surface of the ratio optical element chip 121 that the upper surface of each second portion of terminal 116 will be provided with is higher.Its result, by elecroconductive thin line 123,123 ... the light of diffuse reflection (irregular reference) is received by optical element chip 121, from the light of optical element chip 121 emission by elecroconductive thin line 123,123 ... surface diffuse reflectance (irregular reference) penetrate with film chamber tectosome C11 from optics.By above reason, what this distance was best is to form below the above 575 μ m of 50 μ m.At this, the thickness of the actual optical element chip 121 that uses, maximum is any value of the following scope of the above 200 μ m of 100 μ m.
Light transmission member rest portion 15a as shown in figure 40, is at least a portion of the upper surface of the 3rd insulator layer 15, comprises the fixing means A of fixing light transmission member 124 described later.At this, the upper surface of the 3rd insulator layer 15 that fixing means A is a hacking.Thus, light transmission member 124 tight bond can be fixed in light transmission member rest portion 15a.And, the method of the upper surface of this hacking the 3rd insulator layer 15 is not defined, as long as hacking becomes this surperficial Rz below 20 μ m more than the 5 μ m, being preferably hacking is that Rz is below 20 μ m more than the 10 μ m, be better hacking be Rz below 20 μ m more than the 15 μ m, just can make light transmission member 124 firm best and closely be bonded on the light transmission member rest portion 15a.Also have, as long as shelving light transmission member 124 behind the coating binding agent on the light transmission member rest portion 15a, just can be with light transmission member 124 firm better and bonding closely, this will be better.
The first terminal portion 113,113 ... as shown in figure 40, from optics with the outside wall surface 25,25 of film chamber tectosome C11 ... second metal level 14 outwards outstanding, that upper surface has been implemented coating 102 by the surface forms, and the first metal layer 12 that lower surface has been implemented coating 104 by the surface forms.The first terminal portion 113,113 ... with second portion of terminal 116,116 ... be electrically connected between the 3rd metal level 16.And, the first terminal portion 113,113 ... sidewall (side) in, from outside wall surface 25,25 ... outstanding tip sidewall, the cross section becomes the flexure plane 28 of semi-circular recesses shape.And, implemented the coating 102 of conductor layer on the surface of this flexure plane 28.The first terminal portion 113,113 ... be such shape and formation, lower surface and flexure plane 28 are covered by the coating 102 of conductor layer, optics is assembled into the wiring substrate with film chamber tectosome C11 when, and just form the scolding tin plate between the binding post wiring on the wiring substrate easily, carry out certain connection.Also have, because a plurality of the first terminal portion 113,113 ... do not cover coating 102 on the relative mutually side, terminal pitch is a thin space, for example under the situation of 0.4mm to 0.65mm, can prevent the short circuit between the terminals of adjacent.
And coating 102,104 all is to form at surface deposition gold (Au) layer of nickel (Ni) layer.
On the central portion of assembling face, formed crooked prevention recess 12a (shown in Figure 42 (e)).Thus, even if in upper surface shape film forming chamber portion 2, can prevent that also optics from the bending of film chamber tectosome C11 to assembling face one side, carrying the bending that also can prevent optical element chip 121 under the state on the chip rest portion 114 at optical element chip 121.Also have, on the crooked lower surface that stops with recess 12a, formed insulator layer 17 as shown in figure 41, thus, can stop the short circuit between the first terminal portion 113 fully.
And, the ratio through hole 101,101 of second insulator layer 13 ... the inside has formed the approximate etched part 14a (shown in Figure 42 (e)) that becomes " mouth " shape in bottom surface.For this reason, chip rest portion 114 is not electrically connected with each the first terminal portion 113.Also have, coating 102 inboards of each through hole 101 have formed resin portion 103.
Below, sum up the effect that optics is risen with film chamber tectosome C11.
Light transmission member 124 closely can be fixed on the light transmission member rest portion 15a.
Light that optical element chip 121 receives or the light that sends can by elecroconductive thin line 123,123 ... the surface stop diffuse reflection (irregular reference).
Make optical surface approximate parallel, optical element chip 121 can be set aside on the chip rest portion 114 with respect to assembling face.
Because the formation of film chamber portion 2 just can prevent the optics bending of film chamber tectosome C11 to assembling face one side.
Because good hygroscopicity, the light transparent member knot mist that can prevent to shelve.
Have, former optics because light transmission member or optics are left optical element chip setting, is necessary so reinforcement (rib) is set with in the tectosome of film chamber again.On the other hand, optics is with among the film chamber tectosome C11, because second and third insulator layer 13,15 and the 3rd metal level 16 of chip rest portion 114 top laminations can play the effect of reinforcement, so just there is no need specially reinforcement to be set.
Also have because have easy formation as mentioned above the first terminal portion 113,113 ... and the structure of the scolding tin plate between the splicing ear on the wiring substrate, thus become easily with being connected of wiring substrate, and can connect really.By the above, optics is with film chamber tectosome C11, can provide optical good be connected with the substrate that connects up really optics.
The structure one of-optics D11
Shown in Figure 45 (c) and Figure 46 (c), optics D11 comprises optics film chamber tectosome C11, optical element chip 121, light transmission member 124.Optical element chip 121 is to be fixed on photo detector or light-emitting component on the chip rest portion 114 between binding agent 122, between elecroconductive thin line 123,123 ... with each second portion of terminal 116,116 ... connect.Light transmission member 124 is to be resting on the light transmission member rest portion 15a, and the parts that light is seen through more than 70% are preferably the parts that light is seen through more than 80%, and best is the parts that light is seen through more than 90%.Be the plate of glass specifically.
With this optics D11 be assembled into the wiring substrate on, between the first terminal portion 113,113 ..., second portion of terminal 116,116 ... and elecroconductive thin line 123,123 ..., on optical element chip 121, apply voltage.Thus, optical element chip 121 is luminous, and the light that sends sees through light transmission member 124 and penetrates optics D11.Also have, the light that sees through light transmission member 124 is received by optical element chip 121.
Like this, optics D11 because be to have shelved optical element chip 121 or light transmission member 124 etc. on film chamber tectosome C11 at above-mentioned optics, thus play and optics with the approximately uniform effect of film chamber tectosome C11.
The manufacture method of-optics usefulness film chamber tectosome C11-
Abide by after Figure 42 (a) made mother metal substrate S 11 to the operation shown in Figure 43 (e),, make the optics shown in Figure 44 (c) with film chamber tectosome C11 by carrying out the laser radiation shown in Figure 44 (a).Below, concrete narration.
1. the formation operation of mother metal substrate S 11
At first, shown in Figure 42 (a), form the first metal layer 12, formed second metal level 14, three layers the laminate that formed laminations at the upper surface of first insulator layer 11 at the lower surface of first insulator layer 11.
Next, at the lower surface of the first metal layer 12 or the upper surface of second metal level 14, for the electrical connection that forms the first metal layer 12 and second metal level 14 reaches to make the outstanding tip of the first terminal portion 113 become flexure plane 28, the some irradiating laser.Form through hole thus, shown in Figure 42 (b), formed the through hole portion 101 and the flexure plane 28 that connect the first metal layer 12, first insulator layer 11 and second metal level 14.And, form through hole portion by part in the first tongue-shaped portion that becomes of second metal level 14 that becomes the first terminal portion 113 upper surfaces described later, form flexure plane 28.Omit the laminate two ends among the figure, clearly do not shown through hole.
Next, shown in Figure 42 (c), on the surface of the upper surface of the lower surface of the first metal layer 12, second metal level 14 and through hole portion 101 and flexure plane 28, formed the coating 102 that forms gold (Au) layer behind nickel (Ni) layer again.
Next, shown in Figure 42 (d), on inwall, implemented to inject resin in each through hole portion 101 of coating 102, formed resin portion 103.And each resin portion 103 on coating 102 surfaces is implemented not shown coating.
Next, although not shown, pattern forms the lower surface of the first metal layer 12 and the upper surface of second metal level 14, these layers of etching.Specifically, on the lower surface of the first metal layer 12, periphery in detail, is to form etching mask corresponding to the form that covers coating 102 on the first terminal portion 113 tongue-shaped.On the upper surface of second metal level 14, periphery is with corresponding to the form that covers coating 102 on the first terminal portion 113 tongue-shaped, and central portion forms etching mask on whole, tongue-shaped (the first tongue-shaped portion) is not connected with central portion.Next, etching has formed the laminated body of etching mask.Thus, shown in Figure 42 (e), the middle body of the first metal layer 12 is etched, has formed bending and has prevented to use recess 12a.Also have, the part of second metal level 14 is etched, when more becoming chip rest portion 114, on the neighboring, formed the upper surface that the first tongue-shaped portion becomes the first terminal portion 113 thereafter by the part (middle body of second metal level 14) of second metal level 14 of a central side than etched part 14a.
Next, shown in Figure 43 (a), formed on second metal level, 14 upper surfaces of coating 102 and formed second insulator layer 13 in the etched part 14a.
Next, the part at second insulator layer, 13 upper surfaces forms etching mask, etching second insulator layer 13.Thus, shown in Figure 43 (b), 16 etched part 13a, 13a ..., be formed on the outside of resin portion 103 separately, corresponding with resin portion 103.
Next, shown in Figure 43 (c), on the surface of the upper surface of second insulator layer 13 and each etched part 13a, form the 3rd metal level 16.
Next, although not shown, form etching mask at the 3rd metal level 16 upper surfaces.This etching mask has formed a plurality of tongue-shaped portions from periphery to the central part of the 3rd layer on surface of metal.And the etching laminated body shown in Figure 43 (d), has been left to form the 3rd metal level of etching mask.Just, by this engineering, the 3rd metal level 16 is formed on the periphery on second insulator layer, 13 surfaces and from a plurality of second tongue-shaped the 16as of periphery to second insulator layer, 13 centre of surface portions.
Next, shown in Figure 43 (e), on the upper surface of the 3rd metal level 16 and second insulator layer, 13 parts exposed by etching, form the 3rd insulator layer 15.Thus, can form mother metal substrate S 11.
2. laser radiation operation
At first, on mother metal substrate S 1 entire upper surface shown in Figure 43 (e), irradiating laser.At this moment, the central portion on laser radiation mother metal substrate S 11 surfaces that laser intensity etc. are strong relatively and formed the periphery of the first terminal portion 113, weak relatively laser radiation such as laser intensity are clipped in central portion and have formed part between the periphery of the first terminal portion 113.And the central portion on mother metal substrate S 11 surfaces is the surfaces corresponding to the mother metal substrate S 11 that does not form the 3rd metal level 16 parts and each tongue-shaped 16a.By the strong relatively laser of surperficial central portion irradiation in mother metal substrate S 11, shown in Figure 44 (a), remove by the part of the 3rd insulator layer 15 of this laser radiation, not by second insulator layer, 13 parts of the 3rd metal level 16 coverings and not by first insulator layer 11 of the periphery of second metal level, 14 coverings.By removing of the 3rd insulator layer 15, expose a plurality of second tongue-shaped 16a, 16a ..., a plurality of prominent on shape film forming chamber portion 2 each internal face establish portion 21,21 ...Also have, by removing of the 3rd insulator layer 15, expose the middle body of second metal level 14, in the bottom surface of shape film forming chamber portion 2, exposing a plurality of is the first terminal portions 113 of the first tongue-shaped portion.In this operation, each metal level is worked as the laser trapping layer.For this reason, the side separately of second insulator layer 13 and the 3rd metal level 16 becomes plane separately respectively.And at this moment, best is can make the surface of second metal level 14 become Rz to adjust laser irradiation condition below the 5 μ m more than the 1 μ m.
Also have, by the weak relatively laser of irradiation, do not remove and remaining central portion and formed the surface of the 3rd insulator layer 15 of the folded part of the periphery of the first terminal portion 113, hacking becomes light transmission member rest portion 15a.The hacking degree is that Rz is below 20 μ m more than the 5 μ m.
Next, shown in Figure 44 (b), bending prevents with having formed insulator layer 17 on the recess 12a.Thus, can prevent the first terminal portion 113,113 ... between short circuit.
And, tongue-shaped 16a, 16a ... upper surface on implement coating 104, form second portion of terminal 116,116 ...Formed and implemented coating 104 on second metal level, 14 upper surfaces of coating 102, formed chip rest portion 114.Also have, the first metal layer 12,12 ... the surface on implement coating 104, form the first terminal portion 113,113 ...Thus, can make optics shown in Figure 40 film chamber tectosome C11.
Below, sum up the effect that manufacture method rose of optics with film chamber tectosome C11.
Because be that irradiating laser is removed insulator layer manufacturing optics film chamber tectosome C11 not, so also can not make optics film chamber tectosome C11 even if be not pre-formed separating tank.
Also have, optics is with among the film chamber tectosome C11, and by laser radiation shape film forming chamber portion 2, the upper surface of this film chamber portion 2 becomes light transmission member rest portion 15a.Therefore, used the manufacture method of film chamber tectosome different, need not form the operation of the reinforcement of shelving the light transmission member in addition with former optics.
The manufacture method of-optics D11-
At first, shown in Figure 45 (a) and Figure 46 (a), with binding agent 122 optical element chip 121 that on chip rest portion 114, bonds.
Next, shown in Figure 45 (b) and Figure 46 (b), use 16 elecroconductive thin lines 123,123 ..., be electrically connected respectively the optical element chip 121 and second portion of terminal 116,116 ...At this moment, best is, uses conductive adhesive (not shown), with elecroconductive thin line 123,123 ... be connected in the optical element chip 121 and second portion of terminal 116,116 ...Thereafter, with elecroconductive thin line 123,123 ... seal with resin (not shown).
Next, shown in Figure 45 (c) and Figure 46 (c),, light transmission member 124 is bonded on the light transmission member rest portion 15a with binding agent (not shown).Thus, light transmission member 124 closely can be fixed on the light transmission member rest portion 15a.Do like this, can make optics D11.
And, by will form the first terminal portion 113,113 ... assembling face is assembled on the wiring substrate, just can make optics (not shown).When this assembling, the first terminal portion 113,113 that quilt is connected with the wiring substrate ... outwards outstanding with tongue-shaped outer wall from optics, the side of lower surface and outstanding tip is covered by conductor layer, so, can maximum guarantee scolding tin assembling intensity between optics and the wiring substrate by this lower surface and bend, the scolding tin plate can carry out connecting really and closely with regard to easy formation.
And optics comprises that with film chamber tectosome C11 the method for the position of the first terminal the discerned portion with specific function also can.Below, expression optics film chamber tectosome C111, C211.
＜distortion execution mode 1 〉
The optics of distortion execution mode 1 is represented with Figure 47 with film chamber tectosome C111.Optics as long as look at the shape of the peristome 102a of film chamber portion, just can be known the position of the first terminal portion with specific function with among the film chamber tectosome C111.
Specifically, as shown in figure 47, the contour shape of the peristome 102a of film chamber portion is non-point symmetry with respect to the approximate mid points of peristome 102a.At length say, peristome 102a, one forms circular arc (below, claim that circular arc summit 81a is " the non-point symmetry 81a of portion ") in four summits of rectangle.The non-point symmetry 81a of portion is formed on the outline portion of nearest peristome with the first terminal portion with specific function.For this reason, by from the peristome 102a unilateral observation optics film chamber C111 of portion, just know the position of the first terminal portion with specific function.
And the peristome contour shape of film chamber portion is not limited by above-mentioned record.The profile of peristome is for the shape that embeds approximate triangular prism in the summit in four summits of rectangle also can.
＜distortion execution mode 2 〉
The optics of distortion execution mode 2 is represented with Figure 48 with film chamber tectosome C211.Optics as long as look at the upper surface of optics with film chamber tectosome C211, just can be known the position of the first terminal portion with specific function with among the film chamber tectosome C211.
Specifically, as shown in figure 48, cave 91a is formed on the upper surface of optics with film chamber tectosome C211, near the 91a of this cave, is provided with the first terminal portion with specific function.For this reason, by the upper surface of viewing optics device, just know the position of the first terminal portion with specific function with the film chamber C211 of portion.
" working of an invention mode 12 "
In the execution mode 12, with Figure 49 and Figure 50, expression optics structure and the manufacture method of film chamber tectosome C12.Figure 49, the expression optics structural section of film chamber tectosome C12.Figure 50 represents the profile of optics with the part of the manufacturing process of film chamber tectosome C12.
The structure of-optics usefulness film chamber tectosome C12-
Optics is with film chamber tectosome C12, and is different with film chamber tectosome C11 with the optics of above-mentioned execution mode 11, as shown in figure 49, formed resist layer 31 on the surface of the 3rd insulator layer 15, and the upper surface of resist layer 31 is light transmission member rest portion 135.Like this because light transmission member rest portion 135 is surfaces of resist layer 31, so, optics with film chamber tectosome C12 can be closely fixing light transmission member 124.
At this, so-called " resist layer " is for the short circuit between antirust, the wiring that improves wiring prevents (insulation reliability keep) etc., and resistance to impact, moisture-proof, thermal endurance are formed on the most surperficial layer of substrate.The general material of resist layer is that hybrid epoxidized class hardened material forms in propylene resin, also plays the effect of insulator.
And, as long as at hacking the 3rd insulator layer surface on form resist layer 31, more can be closely fixing light transmission member 124, this is best.
The manufacture method of-optics usefulness film chamber tectosome C12-
At first, abide by Figure 42 that above-mentioned execution mode 11 put down in writing and operation shown in Figure 43, make the mother metal substrate of optics with film chamber tectosome C12.
Next, in the central authorities of mother metal substrate, specifically, do not form on the mother metal substrate surface of tongue-shaped 16a of the 3rd metal level 16 parts irradiating laser in correspondence.Do like this, shown in Figure 50 (a), remove laser radiation the 3rd insulator layer 15 parts and second insulator layer, 13 parts that do not covered by the 3rd metal level 16.
Next, shown in Figure 50 (b), on the surface of the 3rd insulator layer 15, form resist layer 31.Thus, form light transmission member rest portion 135.
Thereafter, by carrying out the coating processing shown in Figure 44 (c) that above-mentioned execution mode 11 put down in writing, can make optics shown in Figure 49 film chamber tectosome C12, by Figure 45 and operation shown in Figure 46, can make the optics (not shown) that comprises optics usefulness film chamber tectosome C12 again.
" working of an invention mode 13 "
In the execution mode 13, with Figure 51 to Figure 53, expression the optics structure of film chamber tectosome C13 and structure and the manufacture method of manufacture method and optics D13.Figure 51 is the profile of expression optics with the structure of film chamber tectosome C13.Figure 52 and Figure 53 are the profile of expression optics with the manufacturing process of film chamber tectosome C13 and optics D13.
The structure of-optics usefulness film chamber tectosome C13-
Optics is with film chamber tectosome C13, and is different with film chamber tectosome C11 with the optics of above-mentioned execution mode 11, shown in Figure 51, on the 3rd insulator layer 15, according to the sequential aggradation of the 4th metal level 52 and the 4th insulator layer 53.And what the 4th metal level 52 was best is the layer that is formed by copper (Cu), and what the 4th insulator layer 53 was best is the insulator layer that comprises the porous material with moisture absorbing.
The internal face of film chamber portion 4, each face, from the bottom surface to peristome, form according to the sequential aggradation of second insulator layer 13, the 3rd metal level 16, the 3rd insulator layer 15, the 4th metal level 52, the 4th insulator layer 53, formed add up to 16 first prominent establish portion 41,41 ... with one the second prominent portion 42 that establishes.First prominent establish portion 41,41 ..., on each internal face, respectively there are four, uniformly-spaced be provided with mutually, each all becomes a face respectively by three sides separately of second insulator layer 13 and the 3rd metal level 16 and forms.The second prominent portion 42 that establishes, each first prominent portion's 41 weak points, face of each self-forming of three sides of the 3rd insulator layer 15 and the 4th metal level 52 established of the ratio of setting.
The light transmission member rest portion 52a of present embodiment because be the second prominent surface of establishing portion 42, is formed in the film chamber portion 4.Therefore, optics is compared with film chamber tectosome C11 with optics with film chamber tectosome C13, and small-sized optics can be provided.
The manufacture method of-optics usefulness film chamber tectosome C13-
At first Figure 42 that is put down in writing by above-mentioned execution mode 11 and method shown in Figure 43 form the laminated body shown in Figure 43 (e).
Next, on the surface of the 3rd insulator layer 15, form the 4th metal level 52, thereafter, on the major part on the 4th metal level 52 surfaces, form etching mask and carry out etching.Thus, shown in Figure 13 (a), near the periphery on the 3rd insulator layer 15 surfaces, can form the 4th metal level 52.
Next, on the 3rd insulator layer 15 surfaces of exposing of the surface of the 4th metal level 52 and Figure 13 (a), form the 4th insulator layer 53 by etching.Thus, can make the mother metal substrate S 13 of the optics shown in Figure 52 (b) with film chamber tectosome C13.
Next, the central authorities on these mother metal substrate S 13 surfaces, specifically, and on surface corresponding to the mother metal substrate S 13 of the peripheral part of the part that does not form the 3rd metal level 16, tongue-shaped 16a and tongue-shaped 16a, irradiating laser.Thus, shown in Figure 53 (a), second insulator layer, 13 parts that covered by the 3rd metal level 16 and the part of the 3rd insulator layer 15 are not removed, shape film forming chamber portion 2 and prominent establish portion 21,21 ...Also have, the part of the 4th insulator layer 53 is removed and forms second and prominently establish portion 42, therefore, has formed light transmission member rest portion 52a.
Next, by carrying out the coating processing shown in Figure 44 (c) that above-mentioned execution mode 11 put down in writing, can make the optics shown in Figure 51 with film chamber tectosome C13.
Thereafter, shown in Figure 53 (b), usefulness binding agent 122 fixing optical element chip 121 on chip rest portion 114, usefulness elecroconductive thin line 123,123 ... be electrically connected second portion of terminal 116,116 ... with optical element chip 121.
And, shown in Figure 53 (c), on light transmission member rest portion 52a, shelve light transmission member 124.Thus, can make optics D13.
" working of an invention mode 14 "
In the execution mode 14, with Figure 54 to Figure 56, expression the optics structure of film chamber tectosome C14 and structure and the manufacture method of manufacture method and optics D14.Figure 54 is the profile of expression optics with the structure of film chamber tectosome C14.Figure 55 is the profile of expression optics with the part of the manufacturing process of film chamber tectosome C14.Figure 56 is the stereogram of optics D14.
The structure of-optics usefulness film chamber tectosome C14-
Optics is with film chamber tectosome C14, and is different with film chamber tectosome C11 with the optics of above-mentioned execution mode 11, shown in Figure 54, on the 3rd insulator layer 15, forms according to the sequential aggradation of the 4th metal level 72 and the 4th insulator layer 73.And what the 4th metal level 72 was best is the layer that is formed by copper (Cu), and what the 4th insulator layer 73 was best is to comprise the porous material with moisture absorbing.Also have, optics comprises the optics fitting portion 175 that replaces light transmission member rest portion with film chamber tectosome C14.
The inner wall part of film chamber portion 6, approximate identical with the inner wall part of the film chamber portion 2 of above-mentioned execution mode 11 records, each since the bottom surface to peristome, form according to the sequential aggradation of second insulator layer 13, the 3rd metal level 16, the 3rd insulator layer 15.
Optics fitting portion 175 is parts of optics such as chimeric lens barrel, forms around film chamber portion 6.Its lower surface is the part of the 4th metal level 72.
The manufacture method of-optics usefulness film chamber tectosome C14-
At first Figure 42 that is put down in writing by above-mentioned execution mode 11 and method shown in Figure 43 form the laminated body shown in Figure 43 (e).
Next, form the 4th metal level 72 on the surface of the 3rd insulator layer 15, thereafter, the central authorities on the 4th metal level 72 surfaces form etching mask and carry out etching.Thus, shown in Figure 55 (a), near the periphery on the 3rd insulator layer 15 surfaces, can form the 4th metal level 72.
Next, on the 3rd insulator layer 15 surfaces of exposing of the surface of the 4th metal level 72 and Figure 55 (a), form the 4th insulator layer 73 by etching.Thus, can make the mother metal substrate S 14 shown in Figure 55 (b).
Next, put down in writing according to above-mentioned execution mode 11, the central illumination laser on these mother metal substrate S 14 surfaces, shape film forming chamber portion 6 and prominent establish portion 21,21 ...Also have, irradiating laser is removed the part of the 4th insulator layer 73 on the surface perimeter of mother metal substrate S 14, exposes the 4th metal level 72.Therefore, formed optics fitting portion 175.
By carry out coating processing Figure 44 (c) that above-mentioned execution mode 11 put down in writing shown in, can make optics Figure 54 shown in film chamber tectosome C14 thereafter.
And, with binding agent fixing optical element chip 121 on chip rest portion 114, with elecroconductive thin line 123,123 ... be electrically connected second portion of terminal 116,116 ... with optical element chip 121, on optics fitting portion 175, shelve optics (not shown).Thus, can make the optics D14 shown in Figure 56.
" working of an invention mode 15 "
In the execution mode 15, with Figure 57 to Figure 59, expression optics structure and the manufacture method of film chamber tectosome C15.Figure 57 and Figure 58 are the profile of expression optics with the manufacturing process of film chamber tectosome C15.Figure 59 is the stereogram of expression optics with the back side one side of film chamber tectosome C15.
The structure of-optics usefulness film chamber tectosome C15-
Optics film chamber tectosome C15, different with the optics of above-mentioned execution mode 11 with film chamber tectosome C11, between the first metal layer 12 and first insulator layer 11, lamination fixture (stand off) with insulator layer 93 and fixture with metal level 92.And, fixture with metal level 92 best be the layer that forms by copper (Cu), fixture with insulator layer 93 best be the insulator layer that comprises porous material with moisture absorbing.
The internal face of film chamber portion 8, the internal face of the film chamber portion 2 that is put down in writing with above-mentioned execution mode 11 is approximate identical, each be from ground to peristome, the lamination that has deposited according to the order of second insulator layer 13, the 3rd metal level 16, the 3rd insulator layer 15 forms.
The first terminal portion 95 shown in Figure 59, is made of with insulator layer 93 and the first metal layer 12 fixture, dashes forward with metal level 92 from fixture and establishes.For this reason, different with above-mentioned optics with film chamber tectosome C11, C12, C13, C14, optics closely can be fixed on the substrate that connects up with film chamber tectosome C15.
The manufacture method of-optics usefulness film chamber tectosome C15-
At first, shown in Figure 57 (a), on the upper surface of first insulator layer 11, form second metal level 14, at the lower surface formation fixture metal level 92 of first insulator layer 11.
Next, although not shown, fixture forms etching mask with the part of the lower surface of metal level 92, etching fixture metal level 92.Thus, shown in Figure 57 (b), fixture remains in the central authorities at first insulator layer, 11 back sides with metal level 92.
Next, shown in Figure 57 (c), on the back side of fixture with the back side of metal level 92 and first insulator layer 11 that exposes by the etching among Figure 57 (b), form fixture with insulator layer 93, form the first metal layer 12 at fixture with the back side of insulator layer 93.
Next, by Figure 42 (d) and the approximately uniform method of Figure 42 (e) put down in writing with above-mentioned execution mode 11, form coating 102, resin bed 103, bending and prevent with recess 12a and etched part 14a.Thus, can form the laminated body shown in Figure 57 (d).
, abide by shown in Figure 43 operation that above-mentioned execution mode 11 put down in writing, form the mother metal substrate of optics with film chamber tectosome C15 thereafter.
Then, at the surface and the back side illuminaton laser of this mother metal substrate.At this moment, use and the irradiation of the approximately uniform method of the laser irradiating method of above-mentioned execution mode 11, go up the approximately uniform laser of exposure intensity to whole of the back side of mother metal substrate to the surface of mother metal substrate.By back side illuminaton laser to the mother metal substrate, remove the part that the fixture that does not form the first metal layer 12 is used insulator layer 93, its result exposes fixture metal level 92.
And, carry out coating processing shown in the Figure 44 (c) that is put down in writing by above-mentioned execution mode 11, formation the first terminal portion 95, chip rest portion 114, the first terminal portion 95 and second portion of terminal 116,116 ..., just can make the film chamber tectosome C15 of the optics shown in Figure 58 (b).
" other execution modes "
Above-mentioned execution mode 1 to 15 of the present invention can also be following such formation.
The prominent portion 21 or the first prominent number of establishing portion 41 of establishing do not limited by above-mentioned record.
Optics is to have made the mother metal substrate by lamination with the manufacture method of film chamber tectosome C1 to C15, still, uses the mother metal substrate that has formed also can.
Above-mentioned execution mode 2 to 5, comprise above-mentioned execution mode 1 distortion execution mode 1 the non-point symmetry 81a of portion or the distortion execution mode 2 cave 91a also can.
Above-mentioned execution mode 7 to 10, comprise above-mentioned execution mode 6 distortion execution mode 1 the non-point symmetry 81a of portion or the distortion execution mode 2 cave 91a also can.
In the above-mentioned execution mode 6 to 9, the first terminal portion 112 also can be the first terminal portion 94 of above-mentioned execution mode 10.
Above-mentioned execution mode 12 to 15, comprise above-mentioned execution mode 11 distortion execution mode 1 the non-point symmetry 81a of portion or the distortion execution mode 2 cave 91a also can.
In the above-mentioned execution mode 11 to 14, the first terminal portion 113 also can be the first terminal portion 95 of above-mentioned execution mode 15.
Also have, shown in Figure 60, with the big mother metal substrate of area carry out simultaneously a plurality of optics with film chamber tectosome C11, C11 ... manufacturing also can.Can improve manufacturing efficient by this manufacture method, reduce manufacturing cost significantly.This manufacture method can be used in the whole execution mode of the present invention.Adjacent optics film chamber tectosome C11, C11 ... dividing method, general is that the mother metal substrate is temporarily fixed on the cutting belt, the cutting of the cutter made with emery grit while washing by water.
The possibility of utilizing on-the industry-
As above explanation, the present invention is at optics film chamber tectosome, optics and optics Useful in the manufacture method of device with film chamber tectosome.

Claims (61)

1. an optics is with film chamber tectosome, is assembled on the wiring substrate and shelved optical element chip at this optics on film chamber tectosome, it is characterized by:
By two-layer at least insulator layer and at least the mutual alternative stacked of two metal layers make,
Comprise:
The first terminal portion is formed on the assembling face that is assembled in above-mentioned wiring substrate, is electrically connected with this wiring substrate,
Film chamber portion, the middle body on the surface of an opposite side with above-mentioned assembling face has the peristome of rectangle,
Light transmission member rest portion is formed on the surface of the above-mentioned opposite side of above-mentioned peristome, shelves above-mentioned optical element chip to be received or light transmission member that the light of emission sees through; In addition
In the portion of above-mentioned film chamber,
The chip rest portion of above-mentioned optical element chip when being the part of the first above-mentioned metal level, is still shelved in the bottom surface,
Each internal face, be from above-mentioned bottom surface on the direction of above-mentioned peristome, form by the first above-mentioned insulator layer, the second above-mentioned metal level and the second above-mentioned insulator layer lamination, from the teeth outwards, a plurality of prominent portions that establish that constitute by this first insulator layer and this second metal level have been formed
Above-mentioned each prominent above-mentioned second metal level of establishing portion is with when above-mentioned the first terminal portion is electrically connected, second portion of terminal that is electrically connected with above-mentioned optical element chip also,
Above-mentioned light transmission member rest portion is the part of above-mentioned second insulator layer, comprises the fixed part of fixing above-mentioned light transmission member.
2. optics according to claim 1 film chamber tectosome is characterized by:
Said fixing portion, for surperficial hacking the surface of above-mentioned second insulator layer.
3. optics according to claim 2 film chamber tectosome is characterized by:
The above-mentioned surface of above-mentioned second insulator layer is that Rz is below 20 μ m more than the 5 μ m by surperficial hacking.
4. optics according to claim 1 film chamber tectosome is characterized by:
Said fixing portion is the resist layer of surface one side that is formed on above-mentioned light transmission member rest portion.
5. an optics is assembled on the wiring substrate with film chamber tectosome, and has shelved optical element chip at this optics on film chamber tectosome, it is characterized by:
Be by three-layer insulated at least body layer and at least the mutual alternative stacked of three-layer metal layer make,
Comprise:
The first terminal portion is formed on the assembling face that is assembled in above-mentioned wiring substrate, is electrically connected with this wiring substrate,
Film chamber portion, the middle body on the surface of an opposite side with above-mentioned assembling face has the peristome of rectangle; In addition
In the portion of above-mentioned film chamber,
The chip rest portion of above-mentioned optical element chip when being the part of the first above-mentioned metal level, is still shelved in the bottom surface,
Each internal face, be from above-mentioned bottom surface on the direction of above-mentioned peristome, form by the first above-mentioned insulator layer, the second above-mentioned metal level, the second above-mentioned insulator layer, the 3rd above-mentioned metal level and the 3rd above-mentioned insulator layer lamination, from the teeth outwards, a plurality of first prominent portions that establish that constitute by this first insulator layer and this second metal level have been formed, with constitute and short second the dashing forward and establish portion of each first prominent portion of establishing than this by this second insulator layer and the 3rd metal level
Above-mentioned each first prominent above-mentioned second metal level of establishing portion is with when above-mentioned the first terminal portion is electrically connected, second portion of terminal that is electrically connected with above-mentioned optical element chip also,
Above-mentioned second prominent above-mentioned the 3rd layer on surface of metal of establishing portion is to have shelved above-mentioned optical element chip to be received or the light transmission member rest portion of the light transmission member that the light of emission passes through.
6. an optics is assembled on the wiring substrate with film chamber tectosome, and has shelved optical element chip at this optics on film chamber tectosome, it is characterized by:
Be by two-layer at least insulator layer and at least the mutual alternative stacked of three-layer metal layer make,
Comprise:
The first terminal portion is formed on the assembling face that is assembled in above-mentioned wiring substrate, is electrically connected with this wiring substrate,
Film chamber portion, the middle body on the surface of an opposite side with above-mentioned assembling face has the peristome of rectangle,
The optics fitting portion forms the recess shape around above-mentioned peristome, the optics that the chimeric light that above-mentioned optical element chip is received or launch sees through; In addition
In the portion of above-mentioned film chamber,
The chip rest portion of above-mentioned optical element chip when being the part of the first above-mentioned metal level, is still shelved in the bottom surface,
Each internal face, be from above-mentioned bottom surface on the direction of above-mentioned peristome, form by the first above-mentioned insulator layer, the second above-mentioned metal level and the second above-mentioned insulator layer lamination, from the teeth outwards, a plurality of prominent portions that establish that constitute by this first insulator layer and this second metal level have been formed
Above-mentioned each prominent above-mentioned second metal level of establishing portion is with when above-mentioned the first terminal portion is electrically connected, second portion of terminal that is electrically connected with above-mentioned optical element chip also,
With the face of the approximately parallel above-mentioned optical component fitting portion in above-mentioned bottom surface of above-mentioned film chamber portion, be the part of the 3rd above-mentioned metal level.
7. optics according to claim 1 film chamber tectosome is characterized by:
The surface of said chip rest portion forms Rz below 5 μ m more than the 1 μ m.
8. optics according to claim 1 film chamber tectosome is characterized by:
In the above-mentioned insulator layer, mixed porous material with moisture absorbing.
9. optics according to claim 1 film chamber tectosome is characterized by:
On the above-mentioned assembling face, formed above-mentioned the first terminal portion, formed bending in the inboard of this periphery and prevented to use recess at periphery.
10. optics according to claim 9 film chamber tectosome is characterized by:
Above-mentioned bending prevents to use recess, stops short circuit in above-mentioned assembling face.
11. optics according to claim 1 film chamber tectosome is characterized by:
The above-mentioned peristome contour shape of the above-mentioned film chamber portion on above-mentioned of an opposite side with above-mentioned assembling face is non-point symmetry with respect to the approximate center point of this peristome.
12. optics according to claim 11 film chamber tectosome is characterized by:
Above-mentioned non-point-symmetric contour shape has the function of orientation of the terminal of the above-mentioned the first terminal of expression portion.
13. optics according to claim 1 film chamber tectosome is characterized by:
On above-mentioned of an opposite side with above-mentioned assembling face, formed the cave portion that represents the orientation of terminal in the above-mentioned the first terminal portion.
14. an optics is characterized by:
Comprise:
Optics is aforesaid right requirement 1 a described optics film chamber tectosome with film chamber tectosome,
Optical element chip is shelved on the chip rest portion of above-mentioned optics with film chamber tectosome,
The light transmission member is shelved on the light transmission member rest portion of above-mentioned optics with film chamber tectosome.
15. an optics is characterized by:
Comprise:
Optics is aforesaid right requirement 5 described optics film chamber tectosomes with film chamber tectosome,
Optical element chip is shelved on the chip rest portion of above-mentioned optics with film chamber tectosome,
The light transmission member is shelved on the light transmission member rest portion of above-mentioned optics with film chamber tectosome.
16. an optics is characterized by:
Comprise:
Optics is aforesaid right requirement 6 described optics film chamber tectosomes with film chamber tectosome,
Optical element chip is shelved on the chip rest portion of above-mentioned optics with film chamber tectosome,
Optics is entrenched in the optics fitting portion of above-mentioned optics with film chamber tectosome.
17. optics according to claim 14 is characterized by:
The surface of above-mentioned optical element chip and above-mentioned second portion of terminal is electrically connected by elecroconductive thin line,
Above-mentioned elecroconductive thin line is by resin-sealed.
18. optics according to claim 14 is characterized by:
The optical surface of above-mentioned optical element chip is arranged on than the above-mentioned surface of above-mentioned second portion of terminal and more leans on above-mentioned peristome one side.
19. the optics manufacture method of film chamber tectosome,
This optics film chamber tectosome,
Be assembled on the wiring substrate, and shelved optical element chip on film chamber tectosome at this optics,
Comprise the first terminal portion that is electrically connected with above-mentioned wiring substrate, second portion of terminal that is electrically connected with this first terminal portion, shelved the chip rest portion of the above-mentioned optical element chip that is electrically connected with this second portion of terminal, and shelve and this optical element chip is received or the light transmission member rest portion of the light transmission member that the light of emission sees through, it is characterized by:
Comprise:
Mother metal substrate preparatory process, preparation comprises the first metal layer that becomes above-mentioned the first terminal portion on the surface that is formed on first insulator layer, be formed on another lip-deep second metal level of this first insulator layer, be formed on second insulator layer of this second layer on surface of metal, the periphery that is formed on this second insulator layer surface reaches from three metal level of this periphery towards a plurality of tongue-shaped portions of the central part on this second insulator layer surface, being formed on the 3rd layer on surface of metal reaches not by the mother metal substrate of the 3rd insulator layer on second insulator layer of the 3rd metal level covering
The laser radiation operation, surface irradiation laser to above-mentioned mother metal substrate, remove not the part of above-mentioned second insulator layer that is covered by above-mentioned the 3rd metal level, the part of above-mentioned the 3rd insulator layer that does not form the 3rd metal level and the part that is formed on the 3rd insulator layer on above-mentioned tongue-shaped, and, the remainder of surperficial hacking the 3rd insulator layer; In addition
In the above-mentioned laser radiation operation,
Remove by the above-mentioned of above-mentioned second and third insulator layer, the middle body that is formed on the above-mentioned surface of above-mentioned mother metal substrate has the film chamber portion of rectangular aperture portion,
Remove by the above-mentioned of above-mentioned second insulator layer, at least a portion of above-mentioned second metal level is exposed, and when forming above-mentioned film chamber portion bottom surface, also becomes above-mentioned optical element chip rest portion,
Remove by the above-mentioned of above-mentioned the 3rd insulator layer, above-mentioned each tongue-shaped is exposed, and has formed a plurality of the dashing forward when establishing portion that is darted on each internal face of above-mentioned film chamber portion, also becomes above-mentioned second portion of terminal,
The above-mentioned surperficial hacking of the above-mentioned remainder by above-mentioned the 3rd insulator layer forms above-mentioned light transmission member rest portion.
20. the optics manufacture method of film chamber tectosome,
This optics film chamber tectosome,
Be assembled on the wiring substrate, and shelved optical element chip on film chamber tectosome at this optics,
Comprise the first terminal portion that is electrically connected with above-mentioned wiring substrate, second portion of terminal that is electrically connected with this first terminal portion, shelved the chip rest portion of the above-mentioned optical element chip that is electrically connected with this second portion of terminal, shelve and this optical element chip received or the light transmission member rest portion of the light transmission member that the light of emission sees through, it is characterized by:
Comprise:
Mother metal substrate preparatory process, preparation comprises on the surface that is formed on first insulator layer, become the first metal layer of above-mentioned the first terminal portion, be formed on another lip-deep second metal level of this first insulator layer, be formed on second insulator layer of this second layer on surface of metal, the periphery that is formed on this second insulator layer surface reaches from three metal level of this periphery towards a plurality of tongue-shaped portions of the central part on this second insulator layer surface, being formed on the 3rd layer on surface of metal reaches not by the mother metal substrate of the 3rd insulator layer on second insulator layer of the 3rd metal level covering
The laser radiation operation, to corresponding to the above-mentioned mother metal substrate surface irradiating laser that does not form above-mentioned the 3rd metal level part and above-mentioned tongue-shaped portion, remove not by the part of second insulator layer of the 3rd metal level covering and the illuminated part of the 3rd insulator layer
Light transmission member rest portion forms operation, after above-mentioned laser radiation operation, forms resist layer on the surface of the remainder of above-mentioned the 3rd insulator layer, forms above-mentioned light transmission member rest portion; In addition
In the above-mentioned laser radiation operation,
Remove by the above-mentioned of above-mentioned second and third insulator layer, the middle body on the above-mentioned surface of above-mentioned mother metal substrate forms the film chamber portion with rectangular aperture portion,
Remove by the above-mentioned of above-mentioned second insulator layer, at least a portion of above-mentioned second metal level is exposed, and when forming above-mentioned film chamber portion bottom surface, also becomes above-mentioned optical element chip rest portion,
Remove by the above-mentioned of above-mentioned the 3rd insulator layer, above-mentioned each tongue-shaped is exposed, and has formed a plurality of the dashing forward when establishing portion that is darted on each internal face of above-mentioned film chamber portion, also becomes above-mentioned second portion of terminal.
21. the optics manufacture method of film chamber tectosome,
This optics film chamber tectosome,
Be assembled on the wiring substrate, and shelved optical element chip on film chamber tectosome at this optics,
Comprise the first terminal portion that is electrically connected with above-mentioned wiring substrate, second portion of terminal that is electrically connected with this first terminal portion, shelved the chip rest portion of the above-mentioned optical element chip that is electrically connected with this second portion of terminal, shelve and this optical element chip received or the light transmission member rest portion of the light transmission member that the light of emission sees through, it is characterized by:
Comprise:
Mother metal substrate preparatory process, preparation comprises on the surface that is formed on first insulator layer, become the first metal layer of above-mentioned the first terminal portion, be formed on second metal level on another surface of this first insulator layer, be formed on second insulator layer of this second layer on surface of metal, the periphery that is formed on this second insulator layer surface reaches from three metal level of this periphery towards a plurality of tongue-shaped portions of the central part on this second insulator layer surface, be formed on the 3rd insulator layer surface that is arranged on the 3rd metal level and four metal level also narrower than the 3rd metal level, being formed on the 4th layer on surface of metal reaches not by the mother metal substrate of the 4th insulator layer on the 3rd insulator layer of the 4th metal level covering
The laser radiation operation, to mother metal substrate surface irradiating laser, remove the illuminated part of the 4th insulator layer, the 3rd insulator layer part that is not covered, the second insulator layer part that is not covered by the 3rd metal level by the 4th metal level corresponding to the periphery of the part that does not form above-mentioned the 3rd metal level, above-mentioned tongue-shaped and this tongue-shaped portion; In addition
In the above-mentioned laser radiation operation,
Remove by above-mentioned second, third and the above-mentioned of the 4th insulator layer, the middle body on the above-mentioned surface of above-mentioned mother metal substrate forms the film chamber portion with rectangular aperture portion,
Remove by the above-mentioned of above-mentioned second insulator layer, at least a portion of above-mentioned second metal level is exposed, and when forming above-mentioned film chamber portion bottom surface, also becomes above-mentioned optical element chip rest portion,
Remove by the above-mentioned of above-mentioned the 3rd insulator layer, above-mentioned each tongue-shaped is exposed, and has formed a plurality of the dashing forward when establishing portion that is darted on each internal face of above-mentioned film chamber portion, also becomes above-mentioned second portion of terminal,
Remove by the above-mentioned of above-mentioned the 4th insulator layer, at least a portion of above-mentioned the 4th metal level is exposed, on each internal face of above-mentioned film chamber portion, form than the above-mentioned first prominent portion of establishing short second prominent establish portion in, become above-mentioned light transmission member rest portion.
22. the optics manufacture method of film chamber tectosome,
This optics film chamber tectosome,
Be assembled on the wiring substrate, and shelved optical element chip on film chamber tectosome at this optics,
Comprise the first terminal portion that is electrically connected with above-mentioned wiring substrate, second portion of terminal that is electrically connected with this first terminal portion, shelved the chip rest portion of the above-mentioned optical element chip that is electrically connected with this second portion of terminal, the optics fitting portion of the optics that the chimeric light that this optical element chip is received or launch passes through is characterized by:
Comprise:
Mother metal substrate preparatory process, preparation comprises on the surface that is formed on first insulator layer, become the first metal layer of above-mentioned the first terminal portion, be formed on second metal level on another surface of this first insulator layer, be formed on second insulator layer of this second layer on surface of metal, the periphery that is formed on this second insulator layer surface reaches from three metal level of this periphery towards a plurality of tongue-shaped portions of the central part on this second insulator layer surface, be formed on the 3rd insulator layer surface that is arranged on the 3rd metal level and four metal level also narrower than the 3rd metal level, being formed on the 4th layer on surface of metal reaches not by the mother metal substrate of the 4th insulator layer on the 3rd insulator layer of the 4th metal level covering
The laser radiation operation, to mother metal substrate surface irradiating laser, remove the illuminated part of the 4th insulator layer, the 3rd insulator layer part that is not covered, the second insulator layer part that is not covered by the 3rd metal level by the 4th metal level corresponding to the part that does not form above-mentioned the 3rd metal level, above-mentioned tongue-shaped and above-mentioned the 4th metal level; In addition
In the above-mentioned laser radiation operation,
Remove by second, third and the above-mentioned of the 4th insulator layer, the middle body on the above-mentioned surface of above-mentioned mother metal substrate forms the film chamber portion with rectangular aperture portion,
Remove by the above-mentioned of above-mentioned second insulator layer, at least a portion of above-mentioned second metal level is exposed, and when forming above-mentioned film chamber portion bottom surface, also becomes above-mentioned optical element chip rest portion,
Remove by the above-mentioned of above-mentioned the 3rd insulator layer, above-mentioned each tongue-shaped is exposed, and has formed to be darted at when a plurality of first on each internal face of above-mentioned film chamber portion is prominent establishes portion, also becomes above-mentioned second portion of terminal,
The above-mentioned of above-mentioned periphery by above-mentioned the 4th insulator layer removed, and at least a portion of above-mentioned the 4th metal level is exposed, and forms above-mentioned optics fitting portion.
23. the optics according to claim 19 manufacture method of film chamber tectosome is characterized by:
The surface of above-mentioned optical element rest portion, it is smooth comparing with the part of not exposing of above-mentioned second metal level.
24. the optics according to claim 23 manufacture method of film chamber tectosome is characterized by:
The surface of above-mentioned optical element rest portion forms Rz below 5 μ m more than the 1 μ m.
25. an optics is assembled on the wiring substrate with film chamber tectosome, and has shelved optical element chip at this optics on film chamber tectosome, it is characterized by:
Be to make by plural layer insulator layer and the mutual alternative stacked of plural layer metal level,
Comprise:
The first terminal portion is formed on the assembling face that is assembled into above-mentioned wiring substrate, is electrically connected with this wiring substrate,
Film chamber portion, the middle body on the surface of an opposite side with above-mentioned assembling face has the peristome of rectangle,
Light transmission member rest portion is shelved and above-mentioned optical element chip is received or light transmission member that the light of emission sees through; In addition
In the portion of above-mentioned film chamber,
The chip rest portion of above-mentioned optical element chip when being the part of the first above-mentioned metal level, is still shelved in the bottom surface,
Each internal face, be from above-mentioned bottom surface on the direction of above-mentioned peristome, form by the first above-mentioned insulator layer, the second above-mentioned metal level and the second above-mentioned insulator layer lamination, from the teeth outwards, a plurality of prominent portions that establish that constitute by this first insulator layer and this second metal level have been formed
Above-mentioned each prominent above-mentioned second metal level of establishing portion, each is with when above-mentioned the first terminal portion is electrically connected, second portion of terminal that is electrically connected with above-mentioned optical element chip also,
By above-mentioned assembling face one side, be provided with the 3rd above-mentioned metal level than above-mentioned the first metal layer.
26. optics according to claim 25 film chamber tectosome is characterized by:
Above-mentioned the 3rd metal level prevents the bending of said chip rest portion.
27. optics according to claim 25 film chamber tectosome is characterized by:
Above-mentioned the first terminal portion is formed on the periphery of above-mentioned assembling face,
Comprise:
First heat unit is arranged on the above-mentioned periphery inboard of above-mentioned assembling face,
Second heat unit is set to extend to above-mentioned first heat unit from the said chip rest portion, and, above-mentioned the 3rd metal level of break-through.
28. optics according to claim 25 film chamber tectosome is characterized by:
The surface of said chip rest portion forms Rz below 5 μ m more than the 1 μ m.
29. optics according to claim 25 film chamber tectosome is characterized by:
On the above-mentioned insulator layer, mixed porous material with moisture absorbing.
30. optics according to claim 25 film chamber tectosome is characterized by:
The above-mentioned peristome contour shape of the above-mentioned film chamber portion on above-mentioned of an opposite side with above-mentioned assembling face is non-point symmetry with respect to the approximate center point of this peristome.
31. optics according to claim 30 film chamber tectosome is characterized by:
Above-mentioned non-point-symmetric contour shape has the function of orientation of the terminal of the above-mentioned the first terminal of expression portion.
32. optics according to claim 25 film chamber tectosome is characterized by:
On above-mentioned of an opposite side with above-mentioned assembling face, formed the cave portion that represents the orientation of terminal in the above-mentioned the first terminal portion.
33. an optics is characterized by:
Comprise:
Optics is the described optics of claim 25 a film chamber tectosome with film chamber tectosome,
Optical element chip is shelved on the chip rest portion of above-mentioned optics with film chamber tectosome, and
The light transmission member is shelved on the light transmission member rest portion of above-mentioned optics with film chamber tectosome.
34. optics according to claim 33 is characterized by:
The surface of above-mentioned optical element chip and above-mentioned second portion of terminal is electrically connected by elecroconductive thin line,
Above-mentioned elecroconductive thin line is by resin-sealed.
35. optics according to claim 33 is characterized by:
The optical surface of above-mentioned optical element chip is arranged on the position of more leaning on above-mentioned peristome one side than the above-mentioned surface of above-mentioned second portion of terminal.
36. an optics is assembled on the wiring substrate with film chamber tectosome, and has shelved optical element chip at this optics on film chamber tectosome, it is characterized by:
Be by two-layer at least insulator layer and at least the mutual alternative stacked of two metal layers make,
Comprise:
Film chamber portion, the middle body on the surface of an opposite side with the assembling face that is assembled in above-mentioned wiring substrate has rectangular aperture portion,
Light transmission member rest portion is formed on the surface of the above-mentioned opposite side of above-mentioned peristome, shelved above-mentioned optical element chip to be received or light transmission member that the light of emission sees through, and
The first terminal portion is electrically connected with the wiring of above-mentioned wiring substrate; In addition
In the portion of above-mentioned film chamber,
The chip rest portion of above-mentioned optical element chip when being the part of the first above-mentioned metal level, has still been shelved in the bottom surface,
Each internal face, be from above-mentioned bottom surface on the direction of above-mentioned peristome, form by the first above-mentioned insulator layer, the second above-mentioned metal level and the second above-mentioned insulator layer lamination, from the teeth outwards, a plurality of prominent portions that establish that constitute by this first insulator layer and this second metal level have been formed
Above-mentioned each prominent above-mentioned second metal level of establishing portion is with when above-mentioned the first terminal portion is electrically connected, second portion of terminal that is electrically connected with above-mentioned optical element chip also,
Above-mentioned the first terminal portion, from outwards outstanding with respect to the approximately perpendicular outside wall surface of above-mentioned assembling face, the lower surface of this first terminal portion and at least the part of side covered by conductor layer,
Above-mentioned light transmission member rest portion is the part of above-mentioned second insulator layer, comprises the fixed part of fixing above-mentioned light transmission member.
37. optics according to claim 36 film chamber tectosome is characterized by:
Said fixing portion, for surperficial hacking the surface of above-mentioned second insulator layer.
38., it is characterized by according to the described optics of claim 37 film chamber tectosome:
The above-mentioned surface of above-mentioned second insulator layer is that Rz is below 20 μ m more than the 5 μ m by surperficial hacking.
39. optics according to claim 36 film chamber tectosome is characterized by:
Said fixing portion is the resist layer of surface one side that is formed on above-mentioned light transmission member rest portion.
40. an optics is assembled on the wiring substrate with film chamber tectosome, and has shelved optical element chip at this optics on film chamber tectosome, it is characterized by:
Be by three-layer insulated at least body layer and at least the mutual alternative stacked of three-layer metal layer make,
Comprise:
Film chamber portion, the middle body on the surface of an opposite side with the assembling face that is assembled in above-mentioned wiring substrate has rectangular aperture portion, and
The first terminal portion is electrically connected with the wiring of above-mentioned wiring substrate; In addition
In the portion of above-mentioned film chamber,
The chip rest portion of above-mentioned optical element chip when being the part of the first above-mentioned metal level, is still shelved in the bottom surface,
Each internal face, be from above-mentioned bottom surface on the direction of above-mentioned peristome, form by the first above-mentioned insulator layer, the second above-mentioned metal level, the second above-mentioned insulator layer, the 3rd above-mentioned metal level and the 3rd above-mentioned insulator layer lamination, from the teeth outwards, a plurality of first prominent portions that establish that constitute by this first insulator layer and this second metal level have been formed, and constitute, and short second the dashing forward and establish portion of each first prominent portion of establishing than this by this second insulator layer and the 3rd metal level
Above-mentioned each first prominent above-mentioned second metal level of establishing portion is with when above-mentioned the first terminal portion is electrically connected, second portion of terminal that is electrically connected with above-mentioned optical element chip also,
Above-mentioned second prominent above-mentioned the 3rd layer on surface of metal of establishing portion is to have shelved above-mentioned optical element chip to be received or the light transmission member rest portion of the light transmission member that the light of emission passes through,
Above-mentioned the first terminal portion, from outwards outstanding with respect to the approximately perpendicular outside wall surface of above-mentioned assembling face, the lower surface of this first terminal portion and at least the part of side covered by conductor layer.
41. an optics is assembled on the wiring substrate with film chamber tectosome, and has shelved optical element chip at this optics on film chamber tectosome, it is characterized by:
Be by two-layer at least insulator layer and at least the mutual alternative stacked of three-layer metal layer make,
Comprise:
Film chamber portion, the middle body on the surface of an opposite side with the assembling face that is assembled in above-mentioned wiring substrate has the peristome of rectangle,
The optics fitting portion forms the recess shape around above-mentioned peristome, the optics that the chimeric light that above-mentioned optical element chip is received or launch sees through,
The first terminal portion is electrically connected with the wiring of above-mentioned wiring substrate; In addition
In the portion of above-mentioned film chamber,
The chip rest portion of above-mentioned optical element chip when being the part of the first above-mentioned metal level, is still shelved in the bottom surface,
Each internal face, be from above-mentioned bottom surface on the direction of above-mentioned peristome, form by the first above-mentioned insulator layer, the second above-mentioned metal level and the second above-mentioned insulator layer lamination, from the teeth outwards, a plurality of prominent portions that establish that constitute by this first insulator layer and this second metal level have been formed
Above-mentioned each prominent above-mentioned second metal level of establishing portion is with when above-mentioned the first terminal portion is electrically connected, second portion of terminal that is electrically connected with above-mentioned optical element chip also,
With the face of the approximately parallel above-mentioned optics fitting portion in above-mentioned bottom surface of above-mentioned film chamber portion, be the part of the 3rd above-mentioned metal level,
Above-mentioned the first terminal portion, from outwards outstanding with respect to the approximately perpendicular outside wall surface of above-mentioned assembling face, the lower surface of this first terminal portion and at least the part of side covered by conductor layer.
42. optics according to claim 36 film chamber tectosome is characterized by:
In the side of above-mentioned the first terminal portion, be, from the outwards outstanding first end parts of above-mentioned outside wall surface by what above-mentioned conductor layer was covered with.
43. optics according to claim 36 film chamber tectosome is characterized by:
The surface of said chip rest portion forms Rz below 5 μ m more than the 1 μ m.
44. optics according to claim 36 film chamber tectosome is characterized by:
On the above-mentioned insulator layer, mixed porous material with moisture absorbing.
45. optics according to claim 36 film chamber tectosome is characterized by:
On the above-mentioned assembling face, periphery has formed metal level, and this periphery inboard has formed bending and prevented to use recess.
46., it is characterized by according to the described optics of claim 45 film chamber tectosome:
Above-mentioned bending prevents to use recess, stops the short circuit of above-mentioned assembling face.
47. optics according to claim 36 film chamber tectosome is characterized by:
The contour shape of the above-mentioned peristome of the above-mentioned film chamber portion on above-mentioned of an opposite side with above-mentioned assembling face is non-point symmetry with respect to the approximate center point of this peristome.
48., it is characterized by according to the described optics of claim 47 film chamber tectosome:
Above-mentioned non-point-symmetric contour shape has the function of orientation of the terminal of the above-mentioned the first terminal of expression portion.
49. optics according to claim 36 film chamber tectosome is characterized by:
On above-mentioned of an opposite side with above-mentioned assembling face, formed the cave portion that represents the orientation of terminal in the above-mentioned the first terminal portion.
50. an optics is characterized by:
Comprise:
Optics is the described optics of claim 36 a film chamber tectosome with film chamber tectosome,
Optical element chip is shelved on the chip rest portion of above-mentioned optics with film chamber tectosome, and
The light transmission member is shelved on the light transmission member rest portion of above-mentioned optics with film chamber tectosome.
51. an optics is characterized by:
Comprise:
Optics is the described optics of claim 40 a film chamber tectosome with film chamber tectosome,
Optical element chip is shelved on the chip rest portion of above-mentioned optics with film chamber tectosome, and
The light transmission member is shelved on the light transmission member rest portion of above-mentioned optics with film chamber tectosome.
52. an optics is characterized by:
Comprise:
Optics is the described optics of claim 41 a film chamber tectosome with film chamber tectosome,
Optical element chip is shelved on the chip rest portion of above-mentioned optics with film chamber tectosome, and
Optics is entrenched in the optics fitting portion of above-mentioned optics with film chamber tectosome.
53., it is characterized by according to the described optics of claim 50:
The surface of above-mentioned optical element chip and above-mentioned second portion of terminal is electrically connected by elecroconductive thin line,
Above-mentioned elecroconductive thin line is by resin-sealed.
54., it is characterized by according to the described optics of claim 50:
The optical surface of above-mentioned optical element chip is arranged on the position of more leaning on above-mentioned peristome one side than the above-mentioned surface of above-mentioned second portion of terminal.
55. the optics manufacture method of film chamber tectosome,
This optics film chamber tectosome,
Be assembled in the wiring substrate, and shelved optical element chip on film chamber tectosome at this optics,
Comprise the first terminal portion that is electrically connected with above-mentioned wiring substrate, second portion of terminal that is electrically connected with this first terminal portion, shelved the chip rest portion of the above-mentioned optical element chip that is electrically connected with this second portion of terminal, shelved and this optical element chip received or the light transmission member rest portion of the light transmission member that emission light sees through, it is characterized by:
Comprise:
The mother metal substrate forms operation, formation comprises a lip-deep the first metal layer that is formed on first insulator layer, be formed on second metal level with outward extending a plurality of first tongue-shaped portions on another surface of this first insulator layer, be formed on second insulator layer of this second layer on surface of metal, the periphery that is formed on this second insulator layer surface reaches from three metal level of this periphery towards a plurality of second tongue-shaped portions of the central part on this second insulator layer surface, be formed on the 3rd layer on surface of metal and reach not by the mother metal substrate of the 3rd insulator layer on second insulator layer of the 3rd metal level covering, and
The laser radiation operation, surface irradiation laser to above-mentioned mother metal substrate, remove not by the part of above-mentioned second insulator layer of above-mentioned the 3rd metal level covering, do not form the part of above-mentioned the 3rd insulator layer of the 3rd metal level, the above-mentioned first insulator layer part that is formed on the part of the 3rd insulator layer on above-mentioned second tongue-shaped and is not covered by above-mentioned second layer metal layer, and, the remainder of surperficial hacking the 3rd insulator layer; In addition
In the above-mentioned laser radiation operation,
Remove by the above-mentioned of above-mentioned second and third insulator layer, the middle body that forms the above-mentioned surface of above-mentioned mother metal substrate has the film chamber portion of rectangular aperture portion,
Remove by the above-mentioned of above-mentioned second insulator layer, at least a portion of above-mentioned second metal level is exposed, and when forming above-mentioned film chamber portion bottom surface, also become above-mentioned optical element chip rest portion, and expose the above-mentioned first tongue-shaped portion,
Remove by the above-mentioned of above-mentioned first insulator layer, the above-mentioned the first terminal portion that forms on above-mentioned first tongue-shaped that upper surface is capped,
Remove by the above-mentioned of above-mentioned the 3rd insulator layer, above-mentioned second each tongue-shaped is exposed, and has formed a plurality of the dashing forward when establishing portion that is darted on each internal face of above-mentioned film chamber portion, also becomes above-mentioned second portion of terminal,
The above-mentioned surperficial hacking of the above-mentioned remainder by above-mentioned the 3rd insulator layer forms above-mentioned light transmission member rest portion.
56. the optics manufacture method of film chamber tectosome,
This optics film chamber tectosome,
Be assembled in the wiring substrate, and shelved optical element chip on film chamber tectosome at this optics,
Comprise the first terminal portion that is electrically connected with above-mentioned wiring substrate, second portion of terminal that is electrically connected with this first terminal portion, shelved the chip rest portion of the above-mentioned optical element chip that is electrically connected with this second portion of terminal, shelved and this optical element chip received or the light transmission member rest portion of the light transmission member that the light of emission sees through, it is characterized by:
Comprise:
The mother metal substrate forms operation, formation comprises a lip-deep the first metal layer that is formed on first insulator layer, be formed on second metal level with outward extending a plurality of first tongue-shaped portions on another surface of this first insulator layer, be formed on second insulator layer of this second layer on surface of metal, the periphery that is formed on this second insulator layer surface reaches from three metal level of this periphery towards a plurality of second tongue-shaped portions of the central part on this second insulator layer surface, being formed on the 3rd layer on surface of metal reaches not by the mother metal substrate of the 3rd insulator layer on second insulator layer of the 3rd metal level covering
The laser radiation operation, to surface irradiation laser corresponding to the above-mentioned mother metal substrate that does not form above-mentioned the 3rd metal level part and the above-mentioned second tongue-shaped portion, remove not by part, the illuminated part of the 3rd insulator layer and the illuminated part of a part of first insulator layer of second insulator layer of the 3rd metal level covering, and
Light transmission member rest portion forms operation, after the above-mentioned laser radiation operation, forms resist layer on the surface of the remainder of above-mentioned the 3rd insulator layer, forms above-mentioned light transmission member rest portion; In addition
In the above-mentioned laser radiation operation,
Remove by the above-mentioned of above-mentioned second and third insulator layer, the middle body on the above-mentioned surface of above-mentioned mother metal substrate forms the film chamber portion with approximate peristome,
Remove by the above-mentioned of above-mentioned second insulator layer, at least a portion of above-mentioned second metal level is exposed, and when forming above-mentioned film chamber portion bottom surface, also become above-mentioned optical element chip rest portion, and expose the above-mentioned first tongue-shaped portion,
Remove by the above-mentioned of above-mentioned first insulator layer, the above-mentioned the first terminal portion that forms on above-mentioned first tongue-shaped that upper surface is capped,
Remove by the above-mentioned of above-mentioned the 3rd insulator layer, above-mentioned second each tongue-shaped is exposed, and when formation is darted at a plurality of prominent on each internal face of above-mentioned film chamber portion and establishes portion, also becomes above-mentioned second portion of terminal.
57. the optics manufacture method of film chamber tectosome,
This optics film chamber tectosome,
Be assembled in the wiring substrate, and shelved optical element chip on film chamber tectosome at this this optics,
Comprise the first terminal portion that is electrically connected with above-mentioned wiring substrate, second portion of terminal that is electrically connected with this first terminal portion, shelved the chip rest portion of the above-mentioned optical element chip that is electrically connected with this second portion of terminal, shelved and this optical element chip received or the light transmission member rest portion of the light transmission member that the light of emission sees through, it is characterized by:
Comprise:
The mother metal substrate forms operation, formation comprises a lip-deep the first metal layer that is formed on first insulator layer, be formed on another lip-deep second metal level of this first insulator layer with outward extending a plurality of first tongue-shaped portions, be formed on second insulator layer of this second layer on surface of metal, the periphery that is formed on this second insulator layer surface reaches from three metal level of this periphery towards a plurality of second tongue-shaped portions of the central part on this second insulator layer surface, be formed on the 3rd insulator layer surface that is arranged on the 3rd metal level and four metal level also narrower than the 3rd metal level, be formed on the 4th layer on surface of metal and reach not by the mother metal substrate of the 4th insulator layer on the 3rd insulator layer of the 4th metal level covering, and
The laser radiation operation, to corresponding to not forming above-mentioned the 3rd metal level part, above-mentioned second tongue-shaped and, remove the illuminated part of above-mentioned the 4th insulator layer, the 3rd insulator layer part that is not covered, second insulator layer part that is not covered by the 3rd metal level and the part of above-mentioned first insulator layer by above-mentioned the 4th metal level corresponding to the surface irradiation laser of the mother metal substrate of the periphery of this tongue-shaped portion; In addition
In the above-mentioned laser radiation operation,
Remove by above-mentioned second, third and the above-mentioned of the 4th insulator layer, the middle body on the above-mentioned surface of above-mentioned mother metal substrate forms the film chamber portion with rectangular aperture portion,
Remove by the above-mentioned of above-mentioned second insulator layer, at least a portion of above-mentioned second metal level is exposed, and when forming above-mentioned film chamber portion bottom surface, also become above-mentioned optical element chip rest portion, and expose the above-mentioned first tongue-shaped portion,
Remove by the above-mentioned of above-mentioned first insulator layer, the above-mentioned the first terminal portion that forms on above-mentioned first tongue-shaped that upper surface is capped,
Remove by the above-mentioned of above-mentioned the 3rd insulator layer, above-mentioned second each tongue-shaped is exposed, and when formation is darted at a plurality of prominent on each internal face of above-mentioned film chamber portion and establishes portion, also becomes above-mentioned second portion of terminal,
Remove by the above-mentioned of above-mentioned the 4th insulator layer, at least a portion of above-mentioned the 4th metal level is exposed, on each internal face of above-mentioned film chamber portion, form than the above-mentioned first prominent portion of establishing short second prominent establish portion in, become above-mentioned light transmission member rest portion.
58. the optics manufacture method of film chamber tectosome,
This optics film chamber tectosome,
Be assembled in the wiring substrate, and shelved optical element chip on film chamber tectosome at this optics,
Comprise the first terminal portion that is electrically connected with above-mentioned wiring substrate, second portion of terminal that is electrically connected with this first terminal portion, shelved the chip rest portion of the above-mentioned optical element chip that is electrically connected with this second portion of terminal, chimeric this optical element chip is received or the optics fitting portion of the optics that the light of emission sees through, it is characterized by:
Comprise:
The mother metal substrate forms operation, formation comprises a lip-deep the first metal layer that is formed on first insulator layer, be formed on second metal level with outward extending a plurality of first tongue-shaped portions on another surface of this first insulator layer, be formed on second insulator layer of this second layer on surface of metal, the periphery that is formed on this second insulator layer surface reaches from three metal level of this periphery towards a plurality of second tongue-shaped portions of the central part on this second insulator layer surface, be formed on the 3rd insulator layer surface that is arranged on the 3rd metal level and four metal level also narrower than the 3rd metal level, be formed on the 4th layer on surface of metal and reach not by the mother metal substrate of the 4th insulator layer on the 3rd insulator layer of the 4th metal level covering, and
The laser radiation operation, to mother metal substrate surface irradiating laser, remove the illuminated part of the 4th insulator layer, the 3rd insulator layer part that is not covered, second insulator layer part that is not covered by the 3rd metal level and the part of above-mentioned first insulator layer by the 4th metal level corresponding to the part that does not form above-mentioned the 3rd metal level, above-mentioned second tongue-shaped and above-mentioned the 4th metal level; In addition
In the above-mentioned laser radiation operation,
Remove by above-mentioned second, third and the above-mentioned of the 4th insulator layer, the middle body on the above-mentioned surface of above-mentioned mother metal substrate forms the film chamber portion with rectangular aperture portion,
Remove by the above-mentioned of above-mentioned second insulator layer, at least a portion of above-mentioned second metal level is exposed, and when forming above-mentioned film chamber portion bottom surface, also become above-mentioned optical element chip rest portion, and expose the above-mentioned first tongue-shaped portion,
Remove by the above-mentioned of above-mentioned first insulator layer, the above-mentioned the first terminal portion that forms on above-mentioned first tongue-shaped that upper surface is capped,
Remove by the above-mentioned of above-mentioned the 3rd insulator layer, second each tongue-shaped is exposed, and when formation is darted at that a plurality of first on each internal face of above-mentioned film chamber portion is prominent and establishes portion, also becomes above-mentioned second portion of terminal,
The above-mentioned of above-mentioned periphery by above-mentioned the 4th insulator layer removed, and at least a portion of above-mentioned the 4th metal level is exposed, and forms above-mentioned optics fitting portion.
59., it is characterized by according to the manufacture method of the described optics of claim 55 with film chamber tectosome:
Above-mentioned mother metal substrate forms operation, comprising:
Deposit forms operation, forms the deposit that the above-mentioned the first metal layer of deposition, above-mentioned first insulator layer and above-mentioned second metal level constitute,
Through hole forms operation, and irradiating laser forms through hole in the part perforate that becomes the above-mentioned first tongue-shaped portion on above-mentioned deposit,
The coating operation forms conductor layer by coating on the internal face of above-mentioned through hole.
60., it is characterized by according to the manufacture method of the described optics of claim 59 with film chamber tectosome:
The surface of above-mentioned optical element rest portion, it is smooth comparing with the part of not exposing of above-mentioned second metal level.
61., it is characterized by according to the manufacture method of the described optics of claim 60 with film chamber tectosome:
The surface of above-mentioned optical element rest portion forms Rz below 5 μ m more than the 1 μ m.
CN 200610071051 2005-04-04 2006-03-31 Optical device cavity structure, optical device, and method for manufacturing an optical device cavity structure Expired - Fee Related CN100521177C (en)

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JP2005107792A JP4088633B2 (en) 2005-04-04 2005-04-04 Cavity structure for optical device and optical device
JP2005107792 2005-04-04
JP2005107785 2005-04-04
JP2005112374 2005-04-08

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