CN100517040C

CN100517040C - Electronic display and method for manufacturing the same

Info

Publication number: CN100517040C
Application number: CNB2005101050348A
Authority: CN
Inventors: 卡伦·泰格尔
Original assignee: IDC LLC
Current assignee: Qualcomm MEMS Technologies Inc
Priority date: 2004-09-27
Filing date: 2005-09-26
Publication date: 2009-07-22
Anticipated expiration: 2025-09-26
Also published as: CN1755481A

Abstract

A MEMS-based display device is described, wherein an array of interferometric modulators are configured to reflect light through a transparent substrate. The transparent substrate is sealed to a backplate and the backplate may contain electronic circuitry fabricated on the backplane. The electronic circuitry is placed in electrical communication with the array of interferometric modulators and is configured to control the state of the array of interferometric modulators.

Description

Electronic console and make the method for this display

Technical field

Technical field of the present invention relates to MEMS (micro electro mechanical system) (MEMS).More specifically, technical field of the present invention relates to the display based on interferometric modulator.

Background technology

For example display device such as LCD generally need be used and be positioned at an electronic control circuit around the protectiveness package outside of display element.For example, a LCD comprises the sheets of glass of two rings around a liquid crystal cell.The control of LCD need be used the circuit that is positioned at the package outside that is formed by these two sheets of glass usually.Arrange that this control circuit that is in this protectiveness package outside will inevitably increase the area occupied or the height of device.

The display of other types is based on MEMS (micro electro mechanical system) (MEMS).These MEMS can comprise micromechanical component, driver and electronic component.Micromechanical component can adopt deposition, etching or other several portions that can etch away substrate and/or institute's deposited material layer maybe can add several layers and make with the micromachined technology that forms electricity and electromechanical assembly.One type MEMS device is called as interferometric modulator.Interferometric modulator can comprise the pair of conductive plate, one of them or the two all can be transparent whole or in part and/or be reflectivity, and can relative motion when applying a suitable electric signal.One of them plate can comprise a quiescent layer that is deposited on the substrate, and another plate can comprise a metal partion (metp) that separates by a clearance and this quiescent layer.Said apparatus is with a wide range of applications, and in this technology, utilizes and/or revises the characteristic of these types of devices so that its performance can be used for improving existing product and makes still undeveloped at present new product will be rather useful.

Summary of the invention

System of the present invention, method and device all have many aspects, and arbitrary single aspect all can not determine its desired characteristic separately.Now, its main characteristic is carried out brief discussion, this not delimit the scope of the invention.Checking this argumentation, especially reading title for after the part of " embodiment ", how people provides the advantage that is better than other display device if can understanding feature of the present invention.

One embodiment of the present of invention are a kind of displays, and wherein said display comprises: a transparent substrates; One interferometric modulator array, it comprises and is configured to reflected light and makes it pass the reflecting element of described transparent substrates; One backboard, it comprises one near the first surface of described interferometric modulator array and comprise electronic circuit on the described first surface that is made in described backboard, and wherein said electronic circuit is configured to control moving of described reflecting element; And a plurality of electric connection lines, it provides described electronic circuit on the described backboard and the electric connection between the described interferometric modulator array.

Another embodiment of the present invention is a kind of method of manufacturing one display, it comprises: a transparent substrates is provided, described transparent substrates comprises an interferometric modulator array that is positioned on the first surface of described transparent substrates, and wherein said modulator comprises reflecting element; One backboard with a first surface is provided; Form electronic circuit on the described first surface of described backboard, wherein said electronic circuit is configured to control the state of described reflecting element; And described transparent substrates and described backboard are positioned, so that the described first surface of described transparent substrates is located near the described first surface of described backboard and described electrical circuit arrangement is to be electrically connected with described interferometric modulator array.

An embodiment more of the present invention is a kind of display of making by the following method: a transparent substrates is provided, described transparent substrates comprises an interferometric modulator array that is positioned on the first surface of described transparent substrates, and wherein said modulator comprises reflecting element; One backboard with a first surface is provided; Form electronic circuit on the described first surface of described backboard, wherein said electronic circuit is configured to control the state of described reflecting element; And described transparent substrates and described backboard are positioned, so that the described first surface of described transparent substrates is located near the described first surface of described backboard and described electrical circuit arrangement is to be electrically connected with described interferometric modulator array.

Another embodiment of the present invention is a kind of electronic console, and it comprises: the transmission member that is used for transmitted light; Be used to modulate the modulation member of the light that transmission passes described transmission member; Comprise the first surface of a close described modulation member and comprise the covering member that is made in the electronic component on the described first surface, wherein said electronic component is configured to control moving of described modulation member; And be used to provide the member that provides of electrical communication between described electronic component and the described modulation member.

Description of drawings

Fig. 1 is first-class axle figure, it shows the part of an embodiment of an interferometric modulator display, wherein one of one first interferometric modulator removable reflection horizon is in an off-position, and a removable reflection horizon of one second interferometric modulator is in an excited target position.

Fig. 2 is a system block diagram, and it shows that one comprises an embodiment of the electronic installation of one 3 * 3 interferometric modulator displays.

Fig. 3 is the removable mirror position of an exemplary embodiment of interferometric modulator shown in Figure 1 and the graph of a relation of the voltage that applies.

Fig. 4 is one group of synoptic diagram that can be used for driving the row and column voltage of interferometric modulator display.

Fig. 5 A and Fig. 5 B show an exemplary sequential chart that can be used for writing to 3X3 interferometric modulator display shown in Figure 2 the row and column signal of a frame of display data.

Fig. 6 A is the sectional view of a device shown in Figure 1.

Fig. 6 B is a sectional view of an alternate embodiment of an interferometric modulator.

Fig. 6 C is a sectional view of another alternate embodiment of an interferometric modulator.

Fig. 7 is a sectional view based on a basic encapsulating structure of the display of interferometric modulator.

Fig. 8 is a sectional view based on the encapsulating structure of the display of interferometric modulator, and wherein electronic package is positioned at the downside of backboard.

Fig. 9 provides the view of downside of the backboard of physical support for one for numerous kinds of electronic packages.

Figure 10 is the sectional view that has been manufactured with the backboard of thin-film electronic circuit above.

Figure 11 is a sectional view based on the encapsulating structure of the display of interferometric modulator, and this encapsulating structure is manufactured with electronic circuit on the downside of backboard.

Figure 12 A is before hot pressing, and a sectional view based on the unassembled encapsulating structure of the display of interferometric modulator, this encapsulating structure have and be made in the electronic circuit in the sunk area on the backboard downside.

Figure 12 is the sectional view of encapsulating structure shown in Figure 12 A after assembling and hot pressing.

Figure 13 A and 13B are system block diagrams, and it shows that one comprises an embodiment of the visual display unit of a plurality of interferometric modulators.

Embodiment

Are a kind of displays based on interferometric modulator with the one embodiment of the invention that are described in more detail hereinafter, its dorsulum comprises the electronic circuit that is made on the backboard inboard.Except that other functions, this electronic circuit can be controlled the state of interferometric modulator array.This is rather useful, for example so that provide the display encapsulation interior circuit of display driving.Make chip for driving on the inboard in the display encapsulation, at backboard and can advantageously in design of electronic circuits, realize greater flexibility.In addition, this kind making can realize advantageously that the best in the space in the display uses, may be thinner than existing apparatus and/or device that area occupied is littler thereby can make one.Make electronic circuit but not use existing chip for driving, also can save cost significantly.

Below describing in detail is at some embodiments of the invention.But, the present invention can implement by being permitted different ways.In this explanation, can be with reference to accompanying drawing, in the accompanying drawings, identical parts use identical number-mark from start to finish.Find out easily that according to following explanation the present invention can implement in arbitrary configuration is used for the device of display image (no matter no matter is dynamic image (for example video) or still image (for example rest image), be character image or picture also).More specifically, the present invention can implement in numerous kinds of electronic installations below (but being not limited to) for example or be associated with these electronic installations: mobile phone, wireless device, personal digital assistant (PDA), handheld computer or portable computer, gps receiver/omniselector, camera, the MP3 player, video camera, game machine, wrist-watch, clock, counter, TV monitor, flat-panel monitor, computer monitor, automotive displays (for example mileometer display etc.), driving cabin control device and/or display, camera scenery display (for example rear view cameras display of vehicle), electronic photo, electronics billboard or label, projector, building structure, packing and aesthetic structures (for example image display of a jewelry).The MEMS device that has similar structures with MEMS device described herein also can be used for non-display application, for example is used for electronic switching device.

Show an interferometric modulator display embodiment who contains an interfere type MEMS display element among Fig. 1.In these devices, pixel is in bright state or dark state.Under bright (open (on) or open (open)) state, display element reflexes to the user with the major part of incident visible light.Be in dark (close (off) or close (closed)) state following time, display element reflects the incident visible light to the user hardly.Decide on different embodiment, can put upside down the light reflectance properties of "on" and "off" state.The MEMS pixel can be configured to mainly reflect under selected color, also can realize colored the demonstration except that black and white.

Fig. 1 is first-class axle figure, and it shows two neighbors in a series of pixels of a visual displays, and wherein each pixel comprises a MEMS interferometric modulator.In certain embodiments, an interferometric modulator display comprises a row/column array that is made of these interferometric modulators.Each interferometric modulator comprises a pair of reflection horizon, and this is positioned to each other to have a variable-sized optical resonance cavity at a distance of a variable and controlled distance at least to form one to the reflection horizon.In one embodiment, one of them reflection horizon can be moved between the two positions.Be referred to herein as on the primary importance of release conditions, the local reflex layer that the position of this displaceable layers distance one is fixed is far away relatively.On the second place, the position of this displaceable layers is more closely near this local reflex layer.Decide position according to removable reflection horizon, from the incident light of this two layers reflection can with mutually long or mutually the mode of disappearing interfere, thereby form the mass reflex or the non-reflective state of each pixel.

The pixel array portion that shows in Fig. 1 comprises two adjacent interferometric modulator 12a and 12b.In the interferometric modulator 12a in left side, demonstration one movably high reflection layer 14a is in an off-position, and this off-position is apart from fixing local reflex layer 16a one preset distance.In the interferometric modulator 12b on right side, demonstration one movably high reflection layer 14b is in an excited target position, and this excited target position is near fixing local reflex layer 16b.

Fixed bed 16a, 16b conduct electricity, the part is transparent and local is reflectivity, and can the layer of one or more respectively do for oneself chromium and tin indium oxides be made by for example depositing on a transparent substrates 20.Described each layer is patterned into parallel band, and can form the column electrode in the display device, as further specifying hereinafter.Displaceable layers 14a, 14b can form by one or more depositing metal layers that is deposited on pillar 18 tops (and column electrode 16a, 16b quadrature) and and be deposited on the series of parallel band that the middle expendable material between the pillar 18 constitutes.After expendable material was etched, these deformable metal levels separated with the air gap 19 of the metal level of fixing by a regulation.These deformable layer can use one to have high conductivity and reflexive material (for example aluminium), and those bands can form the row electrode in the display device.

When not applying voltage, cavity 19 remains between a layer 14a, the 16a, and deformable layer is in the mechanical relaxed state shown in pixel 12a among Fig. 1.Yet after a selected row and column applies potential difference (PD), the capacitor that forms at the respective pixel place of described row and column electrode intersection is recharged, and electrostatic force pulls to these electrodes together.If voltage is enough high, then displaceable layers generation deformation, and be forced on the fixed bed (can on fixed bed, deposit a dielectric material (not shown in this Figure), preventing short circuit, and the control separation distance), shown in the pixel 12b on right side among Fig. 1.Regardless of the potential difference (PD) polarity that is applied, the behavior is all identical.This shows, may command reflection and row/row of non-reflective pixel state encourage to traditional LCD and other display techniques in used row/row encourage similar in many aspects.

Fig. 2 to Fig. 5 shows the example process and the system that use an interferometric modulator array in a display application.Fig. 2 is a system block diagram, and this figure shows that one can embody an embodiment of the electronic installation of each side of the present invention.In this exemplary embodiment, described electronic installation comprises a processor 21, and it can be any general purpose single-chip or multicore sheet microprocessor, for example ARM,

Pentium

Pentium

Pentium Pro, 8051,

Power

Or any special microprocessor, for example digital signal processor, microcontroller or programmable gate array.According to convention in the industry, processor 21 can be configured to carry out one or more software modules.Except that carrying out an operating system, also this processor can be configured to carry out one or more software applications, comprise web browser, telephony application, e-mail program or any other software application.

In one embodiment, processor 21 also is configured to communicate with an array controller 22.In one embodiment, this array control unit 22 comprises a horizontal drive circuit 24 and the column drive circuit 26 that signal is provided to a pel array 30.Array sectional view shown in Fig. 1 illustrates with line 1-1 in Fig. 2.For the MEMS interferometric modulator, described row/row excitation protocol can utilize the hysteresis property of these devices shown in Figure 3.It for example may need, and one 10 volts potential difference (PD) makes a displaceable layers be deformed into actuated state from release conditions.Yet, when described voltage when this value reduces, reduce when being back to below 10 volts at described voltage, described displaceable layers will keep its state.In the exemplary embodiment of Fig. 3, before voltage drop was low to moderate below 2 volts, displaceable layers can not discharge fully.Therefore, in example shown in Figure 3, exist one to be approximately the voltage range that 3-7 lies prostrate, exist one to apply voltage window in this voltage range, described device is stabilized in and discharges or actuated state in this window.Be referred to as " lag windwo " or " stability window " in this article.For an array of display with hysteresis characteristic shown in Figure 3, OK/the row excitation protocol can be designed to be expert at during the gating, the pixel that is energized is applied about 10 a volts voltage difference to selected in current, and to d/d pixel being applied one near 0 volt voltage difference.After gating, it is poor to apply about 5 a volts steady state voltage to pixel, and gating makes its residing any state so that its maintenance is expert at.After being written into, in this example, each pixel is all born one and is in " stability window " interior potential difference (PD) that 3-7 lies prostrate.This characteristic makes pixel design shown in Figure 1 be stabilized in an existing foment or release conditions under identical the voltage conditions that applies.Because each pixel of interferometric modulator, no matter be in foment or release conditions, in fact all be one by described fixed reflector and capacitor that mobile reflection horizon constituted, therefore, this steady state (SS) can be kept under the voltage in the lag windwo and consumed power hardly.If the current potential that is applied is constant, then there is not electric current to flow into pixel basically.

In the typical case uses, can be by determining that according to one group of desired actuated pixels in first row one group of row electrode forms a display frame.After this, a horizontal pulse is put on the electrode of the 1st row, thereby encourage the pixel corresponding with determined alignment.After this, determined one group of row electrode is become corresponding with desired one group of actuated pixels in second row.After this, with a pulse put on the 2nd the row electrode, thereby according to determined row electrode encourage the 2nd the row in respective pixel.The pixel of the 1st row is not subjected to the influence of the pulse of the 2nd row, thereby the state that keeps it to set at the impulse duration of the 1st row.The property mode repeats above-mentioned steps to the row of whole series in order, to form described frame.Usually, repeating this process continuously by the speed with a certain desired frame number/second to refresh and/or upgrade these frames with new video data.Also have a variety of row and the row electrodes that are used to drive pel array also to be known, and can use with the present invention by people with the agreement that forms display frame.

Fig. 4 and Fig. 5 show a kind of possible excitation protocol that is used for forming a display frame on 3 * 3 arrays shown in Figure 2.Fig. 4 shows one group of possible row and column voltage level of can be used for having the pixel of hysteresis curve shown in Figure 3.In the embodiment of Fig. 4, encourage a pixel to comprise and be set to-V being listed as accordingly _Bias, and will go accordingly and be set to+Δ V, it can correspond respectively to-5 volts and+5 volts.Discharging pixel then is to be set to+V by being listed as accordingly _BiasAnd will go accordingly and be set to identical+Δ V, form one 0 volts potential difference (PD) at described pixel two ends thus and realize.In the row of 0 volt of those wherein capable voltages maintenance, pixel is stable at its initial residing state, and is in+V with these row _BiasStill-V _BiasIrrelevant.

Fig. 5 B is the sequential chart of a series of row of demonstration and column signal, and those signals put on 3 * 3 arrays shown in Figure 2, and it will form the demonstration shown in Fig. 5 A and arrange that wherein actuated pixels is non-reflectivity.Before writing the frame shown in Fig. 5 A, pixel can be in any state, and in this example, all row all are in 0 volt, and all row all be in+5 volts.Under these institute's voltages that apply, all pixels are stable at its existing actuated state or release conditions.

In the frame shown in Fig. 5 A, pixel (1,1), (1,2), (2,2), (3,2) and (3,3) are encouraged.For realizing this effect, during the line time of the 1st row, the 1st row and the 2nd row are set at-5 volts, the 3rd row are set at+5 volts.This can not change the state of any pixel, because all pixels all remain in the stability window of 3-7 volt.After this, rise to 5 volts of pulses that are back to 0 volt that descend again then by one from 0 volt and come gating the 1st row.Actuate pixel (1,1) and (1,2) and discharge pixel (1,3) thus.Other pixel in the array is all unaffected.For the 2nd row is set at desired state, the 2nd row are set at-5 volts, the 1st row and the 3rd row are set to+5 volts.After this, apply identical strobe pulse with actuate pixel (2,2) and discharge pixel (2,1) and (2,3) to the 2nd row.Equally, other pixel in the array is all unaffected.Similarly, by the 2nd row and the 3rd row are set at-5 volts, and be listed as the 1st be set at+5 volts to the 3rd capable the setting.The strobe pulse of the 3rd row is set at the state shown in Fig. 5 A with the 3rd row pixel.After writing incoming frame, the row current potential is 0, and the row current potential can remain on+5 or-5 volts, and after this demonstration will be stable at the layout shown in Fig. 5 A.Should be appreciated that, can use identical programs the array that constitutes by tens of or hundreds of row and columns.The sequential, order and the level that should also be clear that the voltage that is used to implement the row and column excitation can alter a great deal in above-described General Principle, and above-mentioned example only is exemplary, and any actuation voltage method all can be used with the present invention.

Detailed structure according to the interferometric modulator of above-mentioned principle operation can be ever-changing.For example, Fig. 6 A-6C shows three kinds of different embodiment of moving lens structure.Fig. 6 A is a sectional view embodiment illustrated in fig. 1, wherein deposition one strip of metal material 14 on the support member 18 that quadrature extends.In Fig. 6 B, movably reflecting material 14 only is on the tethers 32 at corner and is attached to support member.In Fig. 6 C, movably reflecting material 14 is suspended on the deformable layer 34.Because the structural design and the material therefor of reflecting material 14 can be optimized aspect optical characteristics, and the structural design of deformable layer 34 and material therefor can be optimized aspect the desired mechanical property, so this embodiment has some advantages.In many open files, comprise that for example No. 2004/0051929 U.S. discloses in the application case, the production of various dissimilar interference devices has been described.Can use the known technology of a variety of people to make said structure, comprise a series of material depositions, patterning and etching step.

For example the moving-member of MEMS device such as interferometric modulator array is preferable has a space that is protected to move in described space.Hereinafter will illustrate in greater detail the encapsulation technology of MEMS device.The synoptic diagram that shows the basic encapsulating structure of a MEMS device (for example interferometric modulator array) among Fig. 7.As shown in Figure 7, a basic encapsulating structure 70 comprises a substrate 72 and a backboard cover or " cap ", and wherein an interferometric modulator array 76 is formed on the substrate 72.This cap 74 is also referred to as " backboard ".

Substrate 72 is connected with formation encapsulating structure 70 by a seal 78 with backboard 74, thereby makes substrate 72, backboard 74 and seal 78 capsules envelope interferometric modulator array 76.This forms a cavity 79 between backboard 74 and substrate 72.Seal 78 can be a non-airtight sealing body, for example a traditional epoxy radicals sticker.In other embodiments, seal 78 can be polyisobutylene (be called isobutene rubber sometimes, other the time then be called PIB), O shape circle, polycarbamate, film metal weldering, liquid spin-coating glass, solder, polymkeric substance or plastics and vapor permeability scope be about the seal of 0.2-4.7g mm/m2kPa days other types.In another embodiment, seal 78 can be an airtight sealing body.

In certain embodiments, encapsulating structure 70 comprises a kind of through the drying agent 80 of structure with the moisture in the reduction cavity 79.The those skilled in the art will know that for the encapsulation of airtight sealing, drying agent is also nonessential, but can desirably control the moisture that remains in the encapsulation.In one embodiment, drying agent 80 places between interferometric modulator array 76 and the backboard 74.The encapsulation that drying agent both can be used for having airtight sealing also can be used for having the encapsulation of non-airtight sealing.In the encapsulation with airtight sealing, drying agent is generally used for controlling the moisture that remains in encapsulation inside.In the encapsulation with non-airtight sealing, drying agent can be used for controlling the moisture that enters in the encapsulation in environment.Generally speaking, but any trapping moisture and can not disturb the material of the optical property of interferometric modulator array all to can be used as drying agent 80.Suitable desiccant material includes but not limited to zeolite, molecular sieve, surface adsorption agent, loose adsorbent and chemical reactor.

Drying agent 80 can have different forms, shape and size.Except being the solid form, drying agent 80 also can be powder type.These powder can directly be inserted in the encapsulation, and perhaps it can mix mutually with a sticker and applies.In an alternate embodiment, drying agent 80 can form different shape, for example cylindrical or thin slice shape before putting on encapsulation inside.

The person of ordinary skill in the field will understand, and drying agent 80 can apply by different modes.In one embodiment, drying agent 80 forms as the part deposition of interferometric modulator array 76.In another embodiment, drying agent 80 is to be coated on encapsulation 70 inside as a spraying or dip-coating coating.

Above can be, substrate 72 can form the translucent or transparency material of film, MEMS device.These transparency materials include but not limited to glass, plastics and transparent polymer.Interferometric modulator array 76 can comprise the film modulator of separable type.The person of ordinary skill in the field will understand, and backboard 74 can be made by arbitrary suitable material, for example be made by glass, metal, paper tinsel, polymkeric substance, plastics, pottery or semiconductor material (for example silicon).

Encapsulation process can be in a vacuum, vacuum until and comprise under the pressure of environmental pressure or be higher than under the pressure of environmental pressure and realize.Also can be during the sealing processing procedure have in the environment of variable and controlled high or low pressure and finish encapsulation procedure one.In the environment of bone dry interferometric modulator array 76 being encapsulated may be comparatively favourable, but and nonessential like this.Similarly, packaging environment can be the inert gas that is under the environmental baseline.Encapsulate the diversity that can reduce the technology cost and more may realize choice of equipment under environmental baseline, this is the operation that can not influence device under environmental baseline because device can transport.

Generally speaking, expectation makes the water vapor that infiltrates through in the encapsulating structure minimized, controls the environment in the encapsulating structure 70 thus, and it is carried out airtight sealing keeps constant to guarantee described environment.A kind of example of airtight sealing technology is disclosed in the 6th, 589, in No. 625 United States Patent (USP)s.When the humidity in the encapsulation surpassed a certain content, the surface tension that causes because of moisture became and is higher than the restoring force of displaceable element in the interferometric modulator 10 (not shown), thereby displaceable element may become permanent viscous extremely on the described surface.If moisture content is low excessively, then when displaceable element contacted with the surface that has applied, moisture can be charged to the polarity identical with displaceable element.

As indicated above, can use drying agent to control to retain in the moisture in the encapsulating structure 70.Yet, prevent that by making up an airtight sealing body 78 moisture from entering encapsulating structure 70 inside in atmosphere, can reduce needed drying agent or need not to use drying agent.

The continuing of sized display reduced to limit the method that is available for the environment in the management and control encapsulating structure 70, and this is to diminish because be used to place the zone of drying agent 80 in encapsulating structure 70.Because need not to use drying agent, thereby also can make encapsulating structure 70 attenuation, this is that people are desired in certain embodiments.Usually, in the encapsulation that contains drying agent, the expected life of packaged device can be depending on the life-span of drying agent.When drying agent exhausted fully, along with having abundant moisture to enter encapsulating structure and interferometric modulator array being caused damage, interferometric devices may lose efficacy.In certain embodiments, the encapsulation of MEMS assembly (in the present embodiment for based on the display of interferometric modulator) can provide one to install and interconnect (using an electronic circuit board usually) comprises the media of the electronic package of driver, processor, storer and other assemblies in the above.Although except providing one to stop the barrier of particulate and gas and be not used in other purposes, it also can have other functions to the backboard of interferometric modulator matrix usually.By transferring to rely on a multiple field laminate backsheet, described backboard can be used for protecting interferometric modulator, and is used for supporting and interconnect above-mentioned parts and assembly.Described laminate backsheet also can be used as the interconnection between actuator assembly and the display self.

Fig. 8 shows the embodiment of its dorsulum 108 as the encapsulating structure 100 of the support member of numerous kinds of electronic packages.As shown in the figure, an interferometric modulator array 102 is positioned on the transparent substrates 104.Array 102 provides one to be used for light modulated and to make light reflection pass substrate 104 and towards observer's member thus, and substrate 104 provides a member that is used for supported array 102.Seal 106 is engaged to backboard 108 with transparent substrates 104, thereby forms a protection cavity 110 around array 102.In this embodiment, the pillar 112 that is positioned at interferometric modulator array 102 provides extra support for backboard 108, thereby prevents backboard contact array 102.Backboard 108 the various electronic package 114A on backboard 108 downsides of being positioned at for being described in more detail hereinafter, B provides physical support.

Some wherein some pillar 112A-C have among the embodiment of electric conductivity, can by conductive pillar 112A-C contact is positioned on the backboard 108 and with assembly 114A, the conductive trace 116 that B is electrically connected forms electronic package 114A, being electrically connected between B and the array 102.Thus, these conductive pillars and trace provide one to make electronic package 114A, the member of B and array 102 electric connections.

Backboard provides for electronic package in the alternate embodiment of physical support therein, forms being electrically connected between electronic package and the array by making in the conductive bumps on substrate contact in the conductive bumps on the backboard.As another example, can form being electrically connected between backboard and the interfere type array in the conductive bumps on the backboard by making conductive pillar contact.Can adopt one deck anisotropic conductive film (ACF) or other conductive materials to form these electrical connections, perhaps these connections can be metal-metal and connect, for example the connection between two conductive bumps.These alternate embodiments also are provided for making the member of electronic package and described array electric connection.

In other embodiments, can use a flexible cable or similar being electrically connected between the surface of connector a surface that described backboard is provided and described interferometric modulator.Should also be clear that electronic package need not to be positioned at the downside of backboard as shown in the embodiment of Fig. 8.Some or all electronic packages can be positioned on the upper surface of backboard, and can use path or electric feedthrough line to pass backboard formation electrical connection.

Fig. 9 shows the view of the downside of the backboard 120 that has been manufactured with various electronic packages above.Horizontal drive circuit 122 and column drive circuit 124 are positioned on the backboard 120, and leading to the electric connection line of driving circuit 122,124 and the electric connection line between the driving circuit 122,124 provides by conductive trace 126.Driving circuit 122,124 is electrically connected with a voltage generator 127 by trace 126.Driving circuit 122,124 also with weld pad 132a that comprises conductive bumps 134 and 132b electric connection.One Graphics Processing Unit (GPU) 128 is electrically connected with driving circuit 122,124 by trace 126.In addition, low-power circuit 130 is electrically connected with GPU 128.

Weld pad 132a, 132b be configured to the upper surface that is positioned at a transparent substrates on corresponding weld pad align, this transparent substrates is provided with an interferometric modulator array.Corresponding weld pad on the transparent substrates has conductive bumps, and respectively with transparent substrates on interferometric modulator array each row and each the row be electrically connected.Therefore, the bulge-bulge of type noted earlier is connected between each row of driving circuit 122,124 and array provides one to be electrically connected.As previously described, can carry out addressing to a row in the array by the row that uses column drive circuit 124 information to be provided and will to be addressed via horizontal drive circuit 122 gatings to each row at every turn.Therefore, for example electronic package such as driving circuit provides a member that is used to control the state of interferometric element, and backboard 120 provides a member that is used to support electronic circuit.

Voltage generator can be for example commercial unit, and for example Maxim MAX1605, MAX686, MAX1955 or MAX1561 perhaps can implement the circuit that required voltage is regulated for any.In the preferred embodiment that substitutes, can be the concrete application and development voltage generator that it is used for.Voltage generator 127 is provided with two input end 136a, 136b.In the embodiment shown in fig. 9, first input end 136a is in supply voltage (for example 3.3V), and the second input end 134b is in earth potential.Voltage generator provides modified voltage by conductive trace 126 to row and column drive circuit 122,124, so that can apply a potential difference (PD) that is greater than or less than supply voltage at the two ends of a certain row or column.Therefore, voltage generator 127 can be booster circuit (being also referred to as boost pressure circuit) or reduction voltage circuit.

GPU 128 can be for example commercial unit, for example Chips and Technology 69030.In the preferred embodiment that substitutes, can be the concrete application and development GPU circuit that it is used for.In the embodiment shown in fig. 9, GPU 128 is configured to receive three

tunnel input

138A, 138B, 138C (be respectively clock, data, and control), and data conversion is become a kind of required form (for example TFT, STN or CSTN form) of specific row and driving circuit 122,124 that is.In the embodiment shown in fig. 9, GPU provides three signals (clock, data, and control) for row driver 124, and only provides two signals (clock and control) for line driver 122.

Low-power circuit 130 is used to make display can enter low-power mode, and this low-power mode can use small relatively power input to keep shown image.For example, this can realize to the row and the clock and the data-signal of column drive circuit 122,124 from GPU 128 by stopping.For the display that uses interferometric modulator array, this low-power circuit 130 is especially useful, this is because as indicated above, in case the single modulator in the array is moved to release conditions or actuated state, a bias voltage that obviously diminishes promptly is enough to make modulator to remain on this position.In addition, as indicated above, consumed power hardly in this process.

Should be appreciated that electric assembly shown in Figure 9 only is an exemplary.Other embodiment can comprise electric assembly more or less, and single component can be implemented multiple function.In addition; although assembly shown in Figure 9 all is shown as the downside that is positioned at backboard so that it is positioned at the protection cavity that is formed by sealant after encapsulation obtains assembling; yet; some assembly also can be positioned at other positions; for example be positioned on the backboard top or extending on the flange of sealant of transparent substrates, so that these assemblies are positioned at outside the protection cavity.

Electric connection line between package outside and the encapsulation inside can be made by multiple mode.When backboard was glass (for example) or any other prefabricated material of one deck, electric connection line can comprise the conductive trace that extends along the surface of backboard, so that these traces pass through below seal.When made backboard was used as backboard, backboard can advantageously be made for and comprise electric pathway or feedthrough line, and these electric pathways or feedthrough line can provide the electric connection line between backboard upper surface and the lower surface.These paths also can pass glass or other prefabricated back veneer material settings, may be more difficult, consuming time or expensive but set up this kind path.

In other embodiments, thus can be by forming an application specific integrated circuit (ASIC) and make electronic circuit as depositing backsheet layer on the substrate of backboard one.An example that shows this ASIC 140 among Figure 10 with the sectional elevation diagram form.ASIC 140 forms by deposition several layers on a thin film deposition ASIC carrier 142, and thin film deposition ASIC carrier 142 for example can be one deck glass.Carrier 142 can comprise a glassy layer, is similar to mentioned abovely, and this glassy layer is as the backboard of display encapsulation.Can use any suitable material as ASIC carrier 140.

Deposition of amorphous silicon on ASIC carrier 142 then.In the embodiment shown in fig. 10, on carrier 142, deposit one deck 144 amorphous p-type silicon, and in regional 145a, 145b (being also referred to as well), implanted n-type amorphous silicon.These wells 145a, b will become given transistor drain or source electrode.In ASIC 140, well 145a is as transistorized source electrode, and well 145b is as drain electrode.Silicon can for example form by photoetching process or by any other suitable technique deposition known to the person of ordinary skill in the field.The base material of layer in 144 and the p-n junction between well 145a, the b for example can use rapid thermal annealing technology such as (RTA) or use laser to form.Although show a p-transistor npn npn among Figure 10, yet should be appreciated that, can form the n-transistor npn npn by in layer 144, depositing n-type silicon and in well 145a, b, implanting p-type silicon.

Silicon layer 144 that then will be through mixing is coated with an insulation course 146, and in ASIC shown in Figure 10 140, insulation course 146 is one deck SiO ₂, but also can use any suitable insulation layer.Described deposition can be undertaken by for example chemical gas deposition (CVD) or any other suitable method.It can be Mo for example at deposits conductive material 150-on the top of insulation course 146, between well 145a, the b, thereby forms transistorized gate pole.Can use an etch process to come deposits conductive material 150.Another insulation material layer 148 of deposition on conductive material 150 and insulation course 146, in the present embodiment, this insulating material for example can be nitrate such as nitric acid silicon.

The conductive channel of insulation course 148,146 is passed in etching, thereby exposes gate pole 150 and implantation region 145a, b.Plated metal 152, thus the connecting line that is connected to gate pole 150, source electrode 145a and drain electrode 145b formed, form transistor thus.The deposition of this metal level can be undertaken by a mask, so that etching metal 152 is to form required connecting line on correct position.Form another layer metal 153 on layer 152, this layer metal 153 can comprise series of parallel line (not shown).Usually, used metal level in ASIC, for example layer 153 only conducts electricity in one direction because of being configured to the series of parallel line.Connecting line between each transistor is by forming with cambium layer 153 with the photolithographicallpatterned plated metal by a required pattern.Thereby layer 153 forms logic function by connecting transistor by required pattern.

On layer 153, form a metal level 154.As seen from Figure 10, layer 154 comprises a series of its orientations with page quadrature thereby perpendicular to the parallel lines of the parallel lines in the layer 153.Layer 154 is used to ASIC 140 power supplies.On layer 154, form another metal interconnecting layer 155, it can connect more complicated logic connecting line.On interconnection layer 155, form a ground plane 156.Each layer 154-156 all can comprise parallel lines, and can deposit by photoetching and carry out patterning.Interconnection line between each metal level can pass channel setting, described path can by for example in metal level boring and in the hole plated metal form.In addition, although in one embodiment, layer 153-156 comprises parallel lines, yet in alternate embodiment, it can be not that the layer that is made of parallel lines forms by deposition.Therefore, by deposition or etch metal layers, and, can form interconnection line required between each transistor by between each layer, forming interconnection line.

On layer 156, a metal layer at top 157 is as an external interconnect layer, thereby provides connecting line between each logic gate of ASIC and I/O.In the embodiment shown in fig. 10, metal layer at top 157 is not to be made of the series of parallel line, thereby can conduct electricity on a plurality of directions, thereby realizes more complicated interconnection.Can use any suitable coverage and photoetching technique known to the person of ordinary skill in the field to come the etching metal layer at top.For example form among the embodiment of the electronic circuit in the displays encapsulation at wherein ASIC mentioned above 140 one, metal outer articulamentum 148 is by being connected between ASIC 140 and the interferometric modulator array (not shown) is provided in any method described in the application's case or any other suitable method.

In various embodiments, deposition carrier 144 does not need to comprise glass, but can comprise any material that is applicable to the thin film circuit that carrying deposits.Described with reference to Fig. 9 as mentioned, deposition carrier 144 can comprise numerous kinds can make display encapsulation inner with the display package outside between any in the body of formation electric connection line.These bodies can include but not limited to deposit electric feedthrough line in the carrier 144 or path, and electrical interconnection line.

Provide multiple advantage in the manufacturing that the making of electronic circuit can encapsulate at the display based on interfere type.Become effective utilization of the customization energy implementation space of possible circuit by making.For example be different from other display device such as LCD, allow to comprise " interlayer " the interior electronic circuit that is located immediately on the pel array and forms by substrate and backboard based on the display of interferometric modulator.Be positioned on this position by electronic circuit but not be positioned to protect on the substrate flange of cavity outside, the area occupied of display is minimized required as much.In addition, the connecting line between driving circuit and the interferometric modulator array is may be rather complicated, thus complicated in the array each row and each row all need output and connecting line.By making driving circuit, can provide control greatly to the layout of the interconnection line between these outputs and these output and the array.In addition, deposition driving circuit or other electronic circuits can form the display encapsulation thinner and more cheap than the display encapsulation that comprises prefabricated electronic circuit.

Figure 11 shows the embodiment of an encapsulation 160, wherein forms electronic circuit 162, for example a driving circuit by thin film deposition on the downside of a backboard 164.Metal bump thing 166A-C aligns with intermetallic spacing body or pillar 168A-C, so that electronic circuit 162 and being electrically connected between the interferometric modulator array on the substrate 172 170 to be provided.Therefore, bulge 166A-C and pillar 168A-C provide one to be used to member that circuit 162 is electrically connected with array 170.

Sealant 174 forms a protection cavity 176 around array 170 together with substrate 172 and backboard 164.Being electrically connected between outside and the electronic circuit 162 of encapsulation is that the conductive trace 178 by the downside along backboard 164 extends above seal 174 carries out.The quantity of the conductive trace 178 that the operation of electronic array is required depends on the type of the electronic circuit of making 162 on the downside of backboard 164.When electronic circuit 162 comprised driving circuit, the quantity of the trace 178 that extends between encapsulation 160 inside and outside can significantly reduce.Equally, can be reduced at required interconnection line between the inside of encapsulation 160 and the outside making GPU circuit, boost pressure circuit or low-power circuit on the downside of backboard.

Although encapsulation shown in Figure 11 160 comprises the electronic circuit 162 that is made, yet should be appreciated that, in alternate embodiment, electronic circuit can comprise microchip or other the prefabricated circuit mutually integrated with the electronic circuit that is made.For example, driving circuit and boost pressure circuit may be made on the downside of backboard, and link to each other with a commercially available GPU and a low-power circuit.

Figure 12 A and 12B show that assembling one by hot pressing encapsulates 180.Figure 12 A shows the sectional elevation figure of encapsulation 180 before hot pressing, and Figure 12 B shows the sectional elevation figure of encapsulation 180 after hot pressing.

With reference to Figure 12 A, as can be seen, a backboard 182 has the thickness of variation, so that thicker leg part 184 is around a sunk area 185.Electronic circuit 186 is deposited in the sunk area 185 and passes through the upper surface electric connection of path 206 and backboard 182.Electronic circuit 186 also lays and extends at least conductive trace 188 electric connections of the lower surface 207 of leg part 184 with the downside along path 206.One gold medal conductive materials 190 and ACF layer 192 at conductive trace 188 and between the weld pad on the upper surface of transparent substrates 196 194.It should be understood that weld pad 194 also can be trace, bulge or other and can realize connector with the electric connection of interferometric modulator array 200.Weld pad 194 is by conductive trace 198 and interferometric modulator array 200 electric connections that are positioned on transparent substrates 196 upper surfaces.Sealant 202 is engaged to substrate 196 with backboard 182, thereby forms a protection cavity 204 around array 200.

Referring now to Figure 12 B,, this figure shows the hot pressing more encapsulation 180 of compact form afterwards, by this map space, gold conductive materials 190 forces together with ACF 192, thereby being electrically connected between electronic circuit 186 and the array 200 is provided, make thus electronic circuit 186 can array of controls 200 in the state of reflecting element.Be provided for member that circuit 186 is communicated with array 200 thus.As can be seen, the sunk area 185 that is manufactured with electronic circuit 184 in the backboard 182 is for electronic circuit provides the gap, thereby holding circuit is avoided damaging in hot pressing.

Figure 13 A and 13B are the system block diagrams of an embodiment of demonstration one display device 2040.Display device 2040 for example can be cellular phone or mobile phone.Yet the same components of display device 2040 and the form of doing slightly to change thereof also can be used as for example illustration of all kinds such as TV and portable electronic device display device.

Display device 2040 comprises a shell 2041, a display 2030, an antenna 2043, a loudspeaker 2045, an input media 2048 and a microphone 2046.Shell 2041 is made by any technology in the known numerous kinds of manufacturing process of those skilled in the art usually, comprises injection moulding and vacuum forming.In addition, shell 2041 can be made by any material in the numerous kinds of materials, includes but not limited to the combination of plastics, metal, glass, rubber and pottery or one.In one embodiment, shell 2041 comprises removable part (not shown), and these removable parts can have removable part different colours or that comprise different identification, picture or symbol with other and use instead.

The display 2030 of exemplary display device 2040 can be any in the numerous kinds of displays, comprises bi-stable display as herein described.In other embodiments, display 2030 comprises flat-panel monitors such as plasma scope for example mentioned above, EL, OLED, STN LCD or TFT LCD or non-tablet display such as CRT or other tubular devices for example, and these displays are known by the those skilled in the art.Yet for ease of the explanation present embodiment, display 2030 comprises just like interferometric modulator array as herein described.

Figure 13 B schematically shows the assembly among the embodiment of exemplary display device 2040.Example illustrated display device 2040 comprises a shell 2041, and can comprise that other are closed in assembly wherein at least in part.For example, in one embodiment, exemplary display device 2040 comprises a network interface 2027, and this network interface 2027 comprises that one is coupled to the antenna 2043 of a transceiver 2047.Transceiver 2047 is connected to processor 2021, and processor 2021 is connected to again regulates hardware 2052.Regulating hardware 2052 can be configured to a signal is regulated (for example a signal being carried out filtering).Regulate hardware 2052 and be connected to a loudspeaker 2045 and a microphone 2046.Processor 2021 also is connected to an input media 2048 and a driving governor 2029.Driving governor 2029 is coupled to one frame buffer 2028 and is coupled to array driver 2022, and array driver 2022 is coupled to an array of display 2030 again.One power supply 2050 is all component power supply according to the designing requirement of particular exemplary display device 2040.

Network interface 2027 comprises antenna 2043 and transceiver 2047, so that exemplary display device 2040 can communicate by network and one or more device.In one embodiment, network interface 2027 also can have some processing capacity, to reduce the requirement to processor 2021.Antenna 2043 is to launch being used to known to the those skilled in the art and any antenna of received signal.In one embodiment, antenna is launched according to IEEE802.11 standard (comprising IEEE 802.11 (a), (b), or (g)) and is received the RF signal.In another embodiment, antenna is launched according to bluetooth (BLUETOOTH) standard and is received the RF signal.If be cellular phone, then antenna is designed to receive CDMA, GSM, AMPS or other and is used for the known signal that communicates at the mobile phone network.2047 pairs of signals that receive from antenna 2043 of transceiver carry out pre-service, so that it can be received and further be handled by processor 2021.Transceiver 2047 is also handled the signal that self processor 2021 receives, so that they can be by antenna 2043 from exemplary display device 2040 emissions.

In an alternate embodiment, can replace transceiver 2047 by a receiver.In another alternate embodiment, can replace network interface 2027 by an image source, this image source can store or produce and send out the view data of delivering to processor 2021.For example, this image source can be one and contains the software module that the digital video disk (DVD) of view data or hard disk drive or produce view data.

The overall operation of processor 2021 common control examples display device 2040.Processor 2021 automatic network interfaces 2027 or an image source receive data (for example Ya Suo view data), and this data processing is become raw image data or is processed into a kind of form that is easy to be processed into raw image data.Then, the data after processor 2021 will be handled are sent to driving governor 2029 or are sent to frame buffer 2028 and store.Raw data typically refers to the information that can discern the picture characteristics of each position in the image.For example, described picture characteristics can comprise color, saturation degree and gray level.

In one embodiment, processor 2021 comprises a microcontroller, CPU or is used for the logical block of the operation of control examples display device 2040.Regulating hardware 2052 generally includes and is used for sending signals and being used for amplifier and wave filter from microphone 2046 received signals to loudspeaker 2045.Adjusting hardware 2052 can be the discrete component in the exemplary display device 2040, perhaps can incorporate in processor 2021 or other assemblies.

Driving governor 2029 direct self processors 2021 or receive the raw image data that produces by processor 2021 from frame buffer 2028, and suitably with the raw image data reformatting so as high-speed transfer to array driver 2022.Particularly, driving governor 2029 is reformated into one with raw image data and has the data stream of grating class form, so that it has a chronological order that is suitable for scanning array of display 2030.Then, the information after driving governor 2029 will format is sent to array driver 2022.Although driving governor 2029 (for example lcd controller) normally as one independently integrated circuit (IC) be associated with system processor 2021, yet these controllers also can make up by many kinds of modes.It can be used as hardware and is embedded in the processor 2021, is embedded in the processor 2021 or together fully-integrated with example, in hardware and array driver 2022 as software.

Usually, the self-driven controllers 2029 of array driver 2022 receive the information after the format and video data are reformated into one group of parallel waveform, and the parallel waveform per second of this group many times is applied to from hundreds of of the x-y picture element matrix of display, thousands of lead-in wires sometimes.

In one embodiment, driving governor 2029, array driver 2022, and array of display 2030 be applicable to the display of arbitrary type as herein described.For example, in one embodiment, driving governor 2029 is a traditional display controller or bistable display controllers (a for example interferometric modulator controller).In another embodiment, array driver 2022 is a legacy drive or a bistable display driver (a for example interferometric modulator display).In one embodiment, a driving governor 2029 integrates with array driver 2022.This embodiment is very common in the integrated system of for example cellular phone, wrist-watch and other small-area display equal altitudes.In another embodiment, array of display 2030 is a typical array of display or a bistable array of display (a for example display that comprises an interferometric modulator array).

Input media 2048 makes the operation that the user can control examples display device 2040.In one embodiment, input media 2048 comprises a keypad (for example qwerty keyboard or telephone keypad), a button, a switch, a touch sensitive screen, a pressure-sensitive or thermosensitive film.In one embodiment, microphone 2046 is input medias of exemplary display device 2040.When using microphone 2046, can provide voice command to come the operation of control examples display device 2040 by the user to these device input data.

Power supply 2050 can comprise many kinds of energy storing devices, and this is well-known in affiliated technical field.For example, in one embodiment, power supply 2050 is a rechargeable accumulator, for example a nickel-cadmium accumulator or a lithium-ions battery.In another embodiment, power supply 2050 is a regenerative resource, capacitor or solar cell, comprises plastic solar cell and solar cell lacquer.In another embodiment, power supply 2050 is configured to the socket reception electric power on wall.

In certain embodiments, programmability is as indicated above is present in the driving governor in control, and this driving governor can be arranged on several positions of electronic display system.In some cases, the control programmability is present in the array driver 2022.The those skilled in the art will know, can reach the above-mentioned optimization of enforcement in different structures in number of hardware and/or the component software arbitrarily.

Although above describe in detail is to show, illustrate and point out the novel feature that is applicable to various embodiment of the present invention, yet should be appreciated that, the those skilled in the art can be to the various omissions of making of shown device or technology, alternative and change on form and details, and this does not deviate from spirit of the present invention.Should know,, thereby can not provide in the form of all features as herein described and advantage one and implement the present invention because some feature can use with other features or try out mutually independently.

Claims

1, a kind of display, it comprises:

One transparent substrates;

One interferometric modulator array, it comprises and is configured to reflected light so that the light that is reflected passes the reflecting element of described transparent substrates;

One backboard, it comprises a first surface near described interferometric modulator array, and comprises the electronic circuit on the described first surface that is made in described backboard, and wherein said electronic circuit is configured to control moving of described reflecting element; And

A plurality of electric connection lines, it provides described electronic circuit on the described backboard and the electrical communication between the described interferometric modulator array.

2, display as claimed in claim 1, wherein said electric connection line comprise one with first conductive material of described electronic circuit electric connection and one and second conductive material of described interferometric modulator array electric connection.

3, display as claimed in claim 2, wherein said first conductive material and described second conductive material are by an anisotropic conductive film electric connection.

4, display as claimed in claim 2, wherein said first conductive material comprises a conductive material bulge.

5, display as claimed in claim 4, wherein said second conductive material comprises a conductive material bulge.

6, display as claimed in claim 2, wherein said second conductive material comprises an electric conductivity pillar.

7, display as claimed in claim 6, wherein said first conductive material comprise a conductive trace that is positioned on the described first surface of described backboard.

8, display as claimed in claim 6, wherein said first conductive material comprises a conductive material bulge.

9, display as claimed in claim 1, the electronic circuit on the wherein said described first surface that is made in described backboard comprise that one is made in the silicon layer on the described first surface of described backboard.

10, display as claimed in claim 9 wherein is not provided with sticker between the described first surface of described silicon layer and described backboard.

11, display as claimed in claim 1, it further comprises:

One with the processor of described interferometric modulator array electric connection, described processor is configured to image data processing; And

One with the memory storage of described processor electric connection.

12, display as claimed in claim 11, it further comprises a controller, described controller is configured at least a portion of described view data is sent to described electronic circuit.

13, display as claimed in claim 11, it further comprises an image source module, described image source module is configured to described image data transmission to described processor.

14, display as claimed in claim 13, wherein said image source module comprises at least one in a receiver, transceiver and the transmitter.

15, display as claimed in claim 11, it further comprises an input media, described input media is configured to receive the input data and described input data is sent to described processor.

16, a kind of method of manufacturing one electronic console, it comprises:

One transparent substrates is provided, and described transparent substrates comprises an interferometric modulator array that is positioned on the first surface of described transparent substrates, and wherein said modulator comprises reflecting element;

One backboard with a first surface is provided;

Form electronic circuit on the described first surface of described backboard, wherein said electronic circuit is configured to control the state of described reflecting element; And

Described transparent substrates and described backboard are positioned, so that the described first surface of described transparent substrates is located near the described first surface of described backboard and described electrical circuit arrangement is to be electrically connected with described interferometric modulator array.

17, method as claimed in claim 16, wherein said electronic circuit are to form by Film forming method.

18, method as claimed in claim 16, it further comprises deposition one first conductive material that is electrically connected with described interferometric modulator array and deposit second conductive material that is electrically connected with described electronic circuit, and the described deposition of described first and second conductive material is to carry out before described transparent substrates and described backboard are located toward each other described.

19, method as claimed in claim 18, wherein said first conductive material is deposited on the described interferometric modulator array, and described second conductive material is deposited on the described first surface of described backboard.

20, method as claimed in claim 18, wherein said first and second conductive material comprises the conductive material bulge.

21, method as claimed in claim 20, it comprises in addition:

Described transparent substrates and described backboard are positioned, so that described conductive material bulge contacts with each other; And

With described transparent substrates and described backboard hot pressing together, thus described bulge is flattened.

22, method as claimed in claim 20, it comprises in addition:

Deposition one deck anisotropic conductive film is so that it contacts described first or second conductive material;

Described transparent substrates and described backboard are positioned so that described first and second conductive material the two all electrically contact with described anisotropic conductive film layer; And

With described transparent substrates and described backboard hot pressing together.

23, method as claimed in claim 17 wherein forms electronic circuit and comprises on the described first surface of described backboard:

Deposition one silicon substrate layer on the described first surface of described backboard; And

The a plurality of metal levels of deposition on described silicon substrate layer.

24, method as claimed in claim 23, the described deposition of wherein said silicon substrate layer and described a plurality of metal levels is to be undertaken by photoetching process.

25, method as claimed in claim 17 wherein forms electronic circuit and comprises on the described first surface of described backboard:

On the described first surface of described backboard, form transistor; And

Between described transistor, form metal interconnecting wires.

26, method as claimed in claim 25 wherein forms electronic circuit and further comprises on the described first surface of described backboard:

Between described transistor AND gate external electronic circuits, form the metal connecting line; And

Between the described interferometric modulator array of described transistor AND gate, form the metal connecting line.

27, method as claimed in claim 25 wherein forms transistor and comprises on the described first surface of described backboard:

On described transparent substrates, deposit once the doped amorphous silicon layer;

Be implanted into through the silicon of phase contra-doping to form well through the doped amorphous silicon layer described;

At described amorphous silicon layer and described aboveground deposition one ground floor insulating material; And

Deposition one gate pole on described ground floor insulating material, wherein said gate pole comprises conductive material.

28, method as claimed in claim 27 wherein forms transistor and further comprises on the described first surface of described backboard:

Deposition one second layer insulating material on described gate pole and described ground floor insulating material;

Described first and second layer insulating material of etching passes the conductive channel of described insulation material layer to described well and gate pole with formation; And

Deposition one first metal interconnecting layer on described second layer insulating material, described metal interconnecting layer runs through described conductive channel.

29, method as claimed in claim 28, it further is included in and forms the metal connecting line between the described transistor AND gate external circuit, wherein forms the metal connecting line and comprise between described transistor AND gate external circuit:

Deposition one metal layer at top on described first metal interconnecting layer; And

With the described metal layer at top of photoetching process etching to form described connecting line.

30, a kind of electronic console of making by method as claimed in claim 16.

31, a kind of electronic console, it comprises:

The transmission member that is used for transmitted light;

Be used to modulate the modulation member of the light that transmission passes described transmission member;

Be used to cover described modulation member and comprise a covering member near the first surface of described modulation member, wherein said covering member comprises the electronic component that moves that is used to control the described modulation member that is made on the described first surface; And

Be used to provide the member that provides of electrical communication between described electronic component and the described modulation member.

32, electronic console as claimed in claim 31, wherein said transmission member comprises a transparent substrates.

33, electronic console as claimed in claim 31, wherein said modulation member comprises an interferometric modulator array.

34, electronic console as claimed in claim 31, wherein said covering member comprises a backboard.

35, electronic console as claimed in claim 31, the wherein said member that provides comprises a plurality of electric connection lines.

36, electronic console as claimed in claim 31, wherein said electronic component comprises an electronic circuit.