CN100505336C - Flichip type luminous element with micro reflector - Google Patents
Flichip type luminous element with micro reflector Download PDFInfo
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- CN100505336C CN100505336C CNB2004100589898A CN200410058989A CN100505336C CN 100505336 C CN100505336 C CN 100505336C CN B2004100589898 A CNB2004100589898 A CN B2004100589898A CN 200410058989 A CN200410058989 A CN 200410058989A CN 100505336 C CN100505336 C CN 100505336C
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Abstract
The luminous element possesses a tiny reflector. Light from luminous layer to the tiny reflector is led off through reflection of the tiny reflector in order to raise luminous efficiency of luminous element.
Description
Technical field
The invention relates to a kind of light-emitting component, especially about a kind of chip upside-down mounting type light-emitting component with micro-reflector.
Background technology
The application of light-emitting component is rather extensive, for example, can be applicable to optical display, laser diode, traffic sign, data memory device, communication device, lighting device and medical treatment device.In this technology, how one of technical staff's important topic for improving emitting component at present.
In No. the 441859th, Taiwan patent announcement, mention a kind of chip upside-down mounting type light-emitting diode, as shown in Figure 1, first electrode or second electrode that it is characterized in that this chip upside-down mounting type light-emitting diode have good reflective character, by this first or second electrode, to take out of after the light reflection by luminescent layer directive electrode, when yet light arrives at the interface of light-emitting diode and material around after through reflection, still can be subjected to the influence of critical angle θ c, just the angle by the inner light that penetrates of light-emitting diode needs just can penetrate fully in the taper shape of 2 θ c, and the light that surpasses this angle then can be reflected.Therefore enter in the low medium of refractive index when light that light-emitting diode the sent material by high index of refraction, this process can make the angle of bright dipping be subjected to considerable restraint because of the influence that is subjected to refractive index.Therefore, how improving exterior light extraction efficient is an important topic.
Summary of the invention
When how this case inventor solves the above problems in thinking, think if utilize a kind of chip upside-down mounting type light-emitting component with micro-reflector, this micro-reflector comprises the luminous lamination of a distributed transparent geometrical pattern, this distributed transparent geometrical pattern comprises geometrical patterns such as semicircle sphere, pyramid or pyramid, and this geometrical pattern can continuous distribution or discontinuously arranged formation; The formation method of the luminous lamination of this distributed transparent geometrical pattern can this light-emitting component of etching technique etching luminous lamination, form the luminous lamination of a distributed transparent geometrical pattern, or with evaporation or outer add mode such as stick together and form the luminous lamination of a distributed transparent geometrical pattern; Then again with evaporation coating technique, form a reflector on the luminous lamination of this distributed transparent geometrical pattern, this reflector also can have this specific pattern.When light by luminous zone this micro-reflector of directive, incident light can be reflected into vertical light and take out of, therefore the vertical light after the reflection can not be subjected to the influence of critical angle, can extract by inside smoothly, thereby the brightness that can improve light-emitting component.
Main purpose of the present invention is to provide a kind of chip upside-down mounting type light-emitting component with micro-reflector, this micro-reflector comprises the luminous lamination of a distributed transparent geometrical pattern, this distributed transparent geometrical pattern comprises geometrical patterns such as semicircle sphere, pyramid or pyramid, and this geometrical pattern can continuous distribution or discontinuously arranged formation; The formation method of the luminous lamination of this distributed transparent geometrical pattern can this light-emitting component of etching technique etching luminous lamination, form the luminous lamination of a distributed transparent geometrical pattern, or with evaporation or outer add mode such as stick together and form the luminous lamination of a distributed transparent geometrical pattern; Then again with evaporation coating technique, form a reflector on the luminous lamination of this distributed transparent geometrical pattern, this reflector also can have this specific pattern.When light by luminous zone this micro-reflector of directive, incident light can be reflected into vertical light and take out of, therefore the vertical light after the reflection can not be subjected to the influence of critical angle, can be extracted by inside smoothly.
According to one preferred embodiment of the present invention, a kind of chip upside-down mounting type light-emitting component with micro-reflector comprises: a substrate; Be formed at one first semiconductor laminated on this substrate, wherein, this first semiconductor laminated upper surface comprises a first surface zone and a second surface zone; Be formed at the luminescent layer on this first surface zone; Be formed at one second semiconductor laminated on this luminescent layer; Be formed at this second micro-reflector on semiconductor laminated, wherein this micro-reflector comprises distributed transparent geometrical pattern layer, and is formed at the reflector on this distributed transparent geometrical pattern layer; Form one first link electrode on this reflector; And be formed at one second link electrode on this second surface zone.
Above-mentioned substrate is to comprise at least a material that is selected from GaP, glass, SiC, GaN, ZnSe or the sapphire institute constituent material cohort; Above-mentioned reflector is to comprise at least a material that is selected from In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, Cr, PbSn, AuZn or the tin indium oxide institute constituent material cohort; The external form of above-mentioned transparent geometrical pattern layer comprises geometrical patterns such as being selected from semicircle sphere, pyramid or pyramid and constitutes at least a shape in the shape; Above-mentioned first is semiconductor laminated, is to comprise at least a material that is selected from AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN and the AlInGaN institute constituent material cohort; Above-mentioned luminescent layer is to comprise at least a material that is selected from AlGaInP, GaN, InGaN and the AlInGaN institute constituent material cohort; Above-mentioned second is semiconductor laminated, is to comprise at least a material that is selected from AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN and the AlInGaN institute constituent material cohort.
Description of drawings
Fig. 1 is a schematic diagram, represents the chip upside-down mounting type light-emitting component of a prior art;
Fig. 2 is a schematic diagram, expression a kind of chip upside-down mounting type light-emitting component with micro-reflector according to one preferred embodiment of the present invention;
Fig. 3 is a schematic diagram, a kind of chip upside-down mounting type light-emitting component with micro-reflector of expression another preferred embodiment according to the present invention;
Fig. 4 is a schematic diagram, a kind of chip upside-down mounting type light-emitting component with micro-reflector of expression another preferred embodiment according to the present invention.
Reference numeral
1 light-emitting component
10 substrates
11 first contact layers
12 first bond courses
13 luminescent layers
14 second bond courses
15 distributed transparent geometrical pattern second contact layers
16 reflector
17 first link electrodes
18 second link electrodes
2 light-emitting components
20 substrates
21 first contact layers
22 first bond courses
23 luminescent layers
24 second bond courses
25 second contact layers
26 reflector
27 first link electrodes
28 second link electrodes
29 insulating barriers
3 light-emitting components
30 substrates
300 first conversion zones
301 gluing layers
302 second conversion zones
32 transparency conducting layers
33 first contact layers
34 first bond courses
35 luminescent layers
36 second bond courses
37 distributed transparent geometrical pattern second contact layers
38 reflector
39 first link electrodes
40 second link electrodes
Embodiment
See also Fig. 2, a kind of chip upside-down mounting type light-emitting component 1 according to one preferred embodiment of the present invention with micro-reflector, comprise: a transparency carrier 10, be formed at one first contact layer 11 on this transparency carrier 10, wherein, the upper surface of this first contact layer 11 comprises a first surface zone and a second surface zone, be formed at one first bond course 12 on this first surface zone, be formed at the luminescent layer 13 on this first bond course, be formed at one second bond course 14 on this luminescent layer, be formed at the micro-reflector on this second bond course, wherein this micro-reflector comprises distributed transparent geometrical pattern second contact layer 15, and is formed at the reflector 16 on this distributed transparent geometrical pattern second contact layer, be formed at one first link electrode 17 on this second surface zone, and be formed at one second link electrode 18 on this reflector.Above-mentioned geometrical pattern can be that the continuous distribution formula forms, and also can be to be interrupted discontinuously arranged formula to form.
See also Fig. 3, a kind of light-emitting component 2 according to one preferred embodiment of the present invention with micro-reflector, comprise: a transparency carrier 20, be formed at one first contact layer 21 on this transparency carrier, wherein, the upper surface of this first contact layer 21 comprises a first surface zone and a second surface zone, be formed at the micro-reflector on this first surface zone, wherein this micro-reflector comprises the luminous lamination of a distributed transparent geometrical pattern, be formed at the insulating barrier 29 around the luminous lamination of this distributed transparent geometrical pattern and be formed on this insulating barrier and the reflector 26 on the luminous lamination of distributed transparent geometrical pattern top, wherein this reflector forms ohmic contact with the luminous lamination of this distributed transparent geometrical pattern top, the luminous lamination of this distributed transparent geometrical pattern comprises one first bond course 22 that is formed on this first surface zone, be formed at the luminescent layer 23 on this first bond course, and be formed at one second bond course 24 on this luminescent layer, be formed at one first link electrode 27 on this second surface zone, and be formed at one second link electrode 28 on this reflector.Above-mentioned geometrical pattern can be that the continuous distribution formula forms, and also can be to be interrupted discontinuously arranged formula to form.
See also Fig. 4, another preferred embodiment according to the present invention, a kind of light-emitting component 3 with micro-reflector, this light-emitting component is to utilize the wafer joining technique, engage with direct pressurization, or, wafer is engaged on the transparency carrier in modes such as transparent gluing layer joints; This element comprises: one engages transparency carrier 30, be formed at one on these substrate 30 upper surfaces and engage interface 300, be formed at the transparency conducting layer 32 on this joint interface layer, wherein, the upper surface of this transparency conducting layer comprises a first surface zone and a second surface zone, be formed at one first contact layer 33 on this first surface zone, be formed at one first bond course 34 on this first contact layer, be formed at the luminescent layer 35 on this first bond course 34, be formed at one second bond course 36 on this luminescent layer 35, be formed at the micro-reflector on this second bond course 36, wherein this micro-reflector comprises distributed transparent geometrical pattern second contact layer 37, and is formed at the reflector 38 on this distributed transparent geometrical pattern second contact layer, be formed at one first link electrode 39 on this second surface zone, and be formed at one second link electrode 40 on this reflector.
The purpose of above-mentioned joint interface is this substrate of gluing and this first contact layer, and the composition of this joint interface can be glue, semiconductor, transparent oxide or transparent metal layer.
Among three above-mentioned embodiment, also can between second link electrode and reflector, form a transparency conducting layer; Above-mentioned transparent geometrical pattern comprises geometrical patterns such as being selected from semicircle sphere, pyramid or pyramid and constitutes at least a shape in the shape; Above-mentioned transparency carrier is to comprise at least a material that is selected from GaP, glass, SiC, GaN, ZnSe or the sapphire institute constituent material cohort; Above-mentioned reflector is to comprise at least a material or other the replaceable material that is selected from Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, AuZn or the tin indium oxide institute constituent material cohort; Above-mentioned transparency conducting layer is to comprise at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the zinc-tin oxide institute constituent material cohort; Above-mentioned first bond course is to comprise at least a material that is selected from AlGaInP, 1N, GaN, AlGaN, InGaN, AlInGaN and the ZnSe institute constituent material cohort; Above-mentioned luminescent layer is to comprise at least a material that is selected from AlGaInP, GaN, InGaN, AlInGaN and the ZnSe institute constituent material cohort; Above-mentioned second bond course is to comprise at least a material that is selected from AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN, AlInGaN and the ZnSe institute constituent material cohort; Above-mentioned second contact layer is to comprise at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN, AlGaN and the ZnSe institute constituent material cohort; Above-mentioned first contact layer is to comprise at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN, AlGaN and the ZnSe institute constituent material cohort; Above-mentioned insulating barrier is to comprise to be selected from SiNx or SiO
2At least a material in institute's constituent material cohort.
Though light-emitting component of the present invention is disclosed in preferred embodiment, yet scope of the present invention is not limited to above preferred embodiment, and for example substrate can replace it by transparent conductive substrate; Should be with being as the criterion that following claim was defined.Therefore any those skilled in the art is not breaking away under claim of the present invention and the spirit, when making any change.
Claims (39)
1. chip upside-down mounting type light-emitting component with micro-reflector comprises:
One substrate; And
Be formed at the micro-reflector on this substrate, this micro-reflector comprises the luminous lamination of a transparent geometrical pattern, thereby and is formed at a reflector that also has a geometrical pattern on the luminous lamination of this transparent geometrical pattern.
2. a kind of chip upside-down mounting type light-emitting component as claimed in claim 1 with micro-reflector, wherein the luminous lamination of this transparent geometrical pattern comprises:
One first is semiconductor laminated;
One luminescent layer; And
One second is semiconductor laminated.
3. a kind of chip upside-down mounting type light-emitting component as claimed in claim 1 with micro-reflector, wherein the luminous lamination of this transparent geometrical pattern comprises a luminescent layer; And one second is semiconductor laminated; Between the luminous lamination of this transparent geometrical pattern and this substrate, also comprise one first semiconductor laminated.
4. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 1 wherein also comprises a transparency conducting layer between the luminous lamination of this transparent geometrical pattern and this substrate.
5. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 1 wherein also comprises one and engages interface layer between this micro-reflector and this substrate.
6. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 1 wherein also comprises an insulating barrier around the luminous lamination of this transparent geometrical pattern and between this reflector.
7. chip upside-down mounting type light-emitting component with micro-reflector comprises:
One substrate; And
Be formed at one first semiconductor laminated on this substrate;
Be formed at this first luminescent layer on semiconductor laminated;
Be formed at the micro-reflector on this luminescent layer, this micro-reflector comprises the transparent geometrical pattern lamination of one second semiconductor, thereby and is formed at a reflector that also has a geometrical pattern on the transparent geometrical pattern lamination of this second semiconductor.
8. chip upside-down mounting type light-emitting component with micro-reflector comprises:
One substrate; And
Be formed at one first semiconductor laminated on this substrate;
Be formed at this first luminescent layer on semiconductor laminated;
Be formed at one second semiconductor laminated on this luminescent layer;
Be formed at this second micro-reflector on semiconductor laminated, this micro-reflector comprises a transparent geometrical pattern layer, thereby and is formed at a reflector that also has a geometrical pattern on this transparent geometrical pattern layer.
9. as claim 7 or 8 described a kind of chip upside-down mounting type light-emitting components, wherein between this first semiconductor laminated and this substrate, also comprise one and engage interface layer with micro-reflector.
10. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 9 wherein also comprises a transparency conducting layer between this joint interface layer and this first are semiconductor laminated.
11. as claim 1,7 or 8 described a kind of chip upside-down mounting type light-emitting components, wherein at same positive form one first electrode and one second electrode of this light-emitting component away from substrate with micro-reflector.
12. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 1, the pattern form of the luminous lamination of this transparent geometrical pattern wherein is to comprise to be selected from semicircle sphere, pyramid and pyramid and to constitute at least a shape in the shape.
13. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 7, the pattern form of this transparent geometrical pattern lamination wherein is to comprise to be selected from semicircle sphere, pyramid and pyramid and to constitute at least a shape in the shape.
14. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 8, the pattern form of this transparent geometrical pattern layer wherein is to comprise to be selected from semicircle sphere, pyramid and pyramid and to constitute at least a shape in the shape.
15. as claim 1,7 or 8 described a kind of chip upside-down mounting type light-emitting components with micro-reflector, the shape in this reflector wherein is to comprise to be selected from semicircle sphere, pyramid and pyramid and to constitute at least a shape in the shape.
16. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 1, wherein the pattern of the luminous lamination of this transparent geometrical pattern is the geometrical pattern of a continuous distribution formula.
17. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 7, wherein the pattern of this transparent geometrical pattern lamination is the geometrical pattern of a continuous distribution formula.
18. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 1, wherein the pattern of the luminous lamination of this transparent geometrical pattern is the geometrical pattern of a discontinuously arranged formula.
19. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 7, wherein the pattern of this transparent geometrical pattern lamination is the geometrical pattern of a discontinuously arranged formula.
20. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 8, wherein the pattern of this transparent geometrical pattern layer is the geometrical pattern of a discontinuously arranged formula.
21. a kind of chip upside-down mounting type light-emitting component as claimed in claim 2, wherein this first semiconductor laminated one first bond course that comprises at least with micro-reflector.
22. a kind of chip upside-down mounting type light-emitting component as claimed in claim 2, wherein this first semiconductor laminated comprising with micro-reflector:
One first contact layer; And
Be formed at one first bond course on this first contact layer.
23. a kind of chip upside-down mounting type light-emitting component as claimed in claim 3, wherein this first semiconductor laminated comprising with micro-reflector:
One first contact layer; And
Be formed at one first bond course on this first contact layer.
24. a kind of chip upside-down mounting type light-emitting component as claimed in claim 2, wherein this second semiconductor laminated comprising with micro-reflector:
Be formed at one second bond course on this luminescent layer; And
Be formed at one second contact layer on this second bond course.
25. a kind of chip upside-down mounting type light-emitting component as claimed in claim 3, wherein this second semiconductor laminated comprising with micro-reflector:
Be formed at one second bond course on this luminescent layer; And
Be formed at one second contact layer on this second bond course.
26. as claim 1,7 or 8 described a kind of chip upside-down mounting type light-emitting components with micro-reflector, wherein this substrate is to comprise at least a material that is selected from GaP, SiC, GaN, ZnSe, glass and the sapphire institute constituent material cohort.
27. as claim 1,7 or 8 described a kind of chip upside-down mounting type light-emitting components with micro-reflector, wherein this reflector is to comprise at least a material that is selected from Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, AuZn and the tin indium oxide institute constituent material cohort.
28. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 5, wherein this joint interface layer is to comprise at least a material that is selected from glue, semiconductor and the transparent metal institute constituent material cohort.
29. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 9, wherein this joint interface layer is to comprise at least a material that is selected from glue, semiconductor, transparent oxide and the transparent metal institute constituent material cohort.
30. as claim 22 or 23 described a kind of chip upside-down mounting type light-emitting components with micro-reflector, wherein this first contact layer is to comprise at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN, AlGaN and the ZnSe institute constituent material cohort.
31. as claim 21,22 or 23 described a kind of chip upside-down mounting type light-emitting components with micro-reflector, wherein this first bond course is to comprise at least a material that is selected from AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN, AlInGaN and the ZnSe institute constituent material cohort.
32. as claim 2 or 3 described a kind of chip upside-down mounting type light-emitting components with micro-reflector, wherein this luminescent layer is to comprise at least a material that is selected from AlGaInP, GaN, InGaN, AlInGaN and the ZnSe institute constituent material cohort.
33. as claim 7 or 8 described a kind of chip upside-down mounting type light-emitting components with micro-reflector, wherein this luminescent layer is to comprise at least a material that is selected from AlGaInP, GaN, InGaN, AlInGaN and the ZnSe institute constituent material cohort.
34. as claim 22 or 23 described a kind of chip upside-down mounting type light-emitting components with micro-reflector, wherein this second bond course is to comprise at least a material that is selected from AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN, AlInGaN and the ZnSe institute constituent material cohort.
35. as claim 22 or 23 described a kind of chip upside-down mounting type light-emitting components with micro-reflector, wherein this second contact layer is to comprise at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN, AlGaN and the ZnSe institute constituent material cohort.
36. a kind of chip upside-down mounting type light-emitting component as claimed in claim 10 with micro-reflector, wherein this transparency conducting layer is to comprise at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the zinc-tin oxide institute constituent material cohort.
37. a kind of chip upside-down mounting type light-emitting component as claimed in claim 4 with micro-reflector, wherein this transparency conducting layer is to comprise at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the zinc-tin oxide institute constituent material cohort.
38. a kind of chip upside-down mounting type light-emitting component with micro-reflector as claimed in claim 6, wherein this insulating barrier is to comprise to be selected from SiNx and SiO
2At least a material in institute's constituent material cohort.
39. as claim 1,7 or 8 described a kind of chip upside-down mounting type light-emitting components with micro-reflector, wherein wafer juncture that can a kind of direct bond between this substrate and the micro-reflector forms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100589898A CN100505336C (en) | 2004-07-29 | 2004-07-29 | Flichip type luminous element with micro reflector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100589898A CN100505336C (en) | 2004-07-29 | 2004-07-29 | Flichip type luminous element with micro reflector |
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| Publication Number | Publication Date |
|---|---|
| CN1728408A CN1728408A (en) | 2006-02-01 |
| CN100505336C true CN100505336C (en) | 2009-06-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004100589898A Active CN100505336C (en) | 2004-07-29 | 2004-07-29 | Flichip type luminous element with micro reflector |
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| CN1728408A (en) | 2006-02-01 |
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