CN100501494C - MEMS device fabricated on a pre-patterned substrate - Google Patents

MEMS device fabricated on a pre-patterned substrate Download PDF

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CN100501494C
CN100501494C CNB2005800312341A CN200580031234A CN100501494C CN 100501494 C CN100501494 C CN 100501494C CN B2005800312341 A CNB2005800312341 A CN B2005800312341A CN 200580031234 A CN200580031234 A CN 200580031234A CN 100501494 C CN100501494 C CN 100501494C
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electrode
layer
substrate
display device
face
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CN101023385A (en
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克拉伦斯·徐
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Qualcomm MEMS Technologies Inc
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IDC LLC
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Abstract

A micro-electromechanical systems device fabricated on a pre-patterned substrate having grooves formed therein. A lower electrode is deposited over the substrate and separated by an orthogonal upper electrode by a cavity. The upper electrode is configured to be movable to modulate reflected light. A semi-reflective layer and a transparent material are formed over the movable upper electrode.

Description

Be made in the MEMS device on the pre-patterned substrate
Technical field
Technical field of the present invention relates to MEMS (micro electro mechanical system) (MEMS) and to the encapsulation of this kind system.More specifically, technical field of the present invention relates to interferometric modulator and in a method of making this kind interferometric modulator in advance on the patterned substrate.
Background technology
MEMS (micro electro mechanical system) (MEMS) comprises micromechanical component, activator appliance and electronic component.Micromechanical component can adopt deposition, etching or other several portions that can etch away substrate and/or institute's deposited material layer maybe can add several layers and make with the micromachined technology that forms electricity and electromechanical assembly.One type MEMS device is called as interferometric modulator.As used herein, term " interferometric modulator " or " interferometric light modulator " are meant and a kind ofly utilize principle of optical interference to absorb selectively and/or catoptrical device.In certain embodiments, interferometric modulator can comprise the pair of conductive plate, and this can be transparent whole or in part to one in the current-carrying plate or the two and/or be reflectivity, and can relatively move when applying a suitable electric signal.In a certain embodiments, a plate can comprise a quiescent layer that is deposited on the substrate, and another plate can comprise a metallic film that separates by an air gap or cavity and this quiescent layer.As being described in more detail herein, a plate can change the optical interference of incident light on this interferometric modulator with respect to the position of another plate.These devices are with a wide range of applications, and in affiliated field, utilize and/or revise the characteristic of these types of devices so that its performance can be used for improving existing product and makes still undeveloped at present new product will be rather useful.
Summary of the invention
System of the present invention, method and device all have many aspects, and arbitrary single aspect all can not determine its desired characteristic separately.Now, with its major characteristic of brief description, but this not delimit the scope of the invention.After considering this content of the discussions, especially after the reading title was the part of " embodiment ", how people provided the advantage that is better than other display device if can understanding characteristic of the present invention.Embodiment described herein provides a kind of encapsulating structure and a kind of method of making an encapsulating structure under environmental baseline.
One embodiment provides a kind of method of making one MEMS devices.One substrate with a plurality of grooves is provided.At least one layer of deposition on described substrate, wherein said layer is discontinuous at described groove place.Be formed at one and form one first cavity between first electrode on the described substrate and one second electrode, wherein said at least one layer comprises described first electrode.
According to another embodiment, a kind of display device is provided, it comprises: one wherein has the substrate of a plurality of grooves, and one is formed at first electrode and one second electrode on the end face of described substrate, a semi-reflective layer; An and transparent material that is formed on the chromium layer.Described first electrode and the described second electrode mutually insulated also separate by one first cavity.Described semi-reflective layer and described second electrode separate by one second cavity.
According to another embodiment, provide a kind of method of formation one MEMS devices.One substrate with an end face is provided, wherein in described end face, forms a plurality of grooves.At least one layer of deposition on described substrate, wherein said at least one layer comprises one first conductive material and discontinuous at described groove, thereby forms each row of described layer on described end face.Deposit one second conductive material, described first conductive material on wherein said second conductive material and the described end face is oriented orthogonally to.
According to another embodiment, provide a kind of display device.Described display device comprises: one wherein is formed with the substrate of a plurality of grooves, one is formed on described substrate one end face and is used for catoptrical second reflecting member to be used for catoptrical first reflecting member and, one with the be separated by semi-reflective layer of one second cavity of described second reflecting member, an and member of watching that is used for transmitted light.Described first reflecting member and the described second reflecting member mutually insulated and one first cavity of being separated by, and the described member of watching is formed at above the described semi-reflective layer.
Description of drawings
To easily know these and other aspect of the present invention according to hereinafter explanation and accompanying drawing (not drawn on scale), these accompanying drawings are intended to illustration and non-limiting the present invention, in the accompanying drawing:
Fig. 1 is first-class axle figure, it shows the part of an embodiment of an interferometric modulator display, wherein one of one first interferometric modulator removable reflection horizon is in a slack position, and a removable reflection horizon of one second interferometric modulator is in one and is subjected to active position.
Fig. 2 is a system block diagrams, and its graphic extension one comprises an embodiment of the electronic installation of one 3 * 3 interferometric modulator displays.
Fig. 3 is the removable mirror position of an exemplary embodiment of interferometric modulator shown in Figure 1 and the graph of a relation of the voltage that applies.
Fig. 4 is one group of synoptic diagram that can be used for driving the row and column voltage of interferometric modulator display.
An exemplary frame of display data in Fig. 5 A graphic extension 3 x shown in Figure 23 interferometric modulator displays.
Fig. 5 B graphic extension can be used for writing the capable signal of frame shown in Fig. 5 A and an exemplary sequential chart of column signal.
Fig. 6 A and 6B are system block diagrams, and its graphic extension one comprises an embodiment of the visual display unit of a plurality of interferometric modulators.
Fig. 7 A is the sectional view of a device shown in Figure 1.
Fig. 7 B is the sectional view of an alternate embodiment of an interferometric modulator.
Fig. 7 C is the sectional view of another alternate embodiment of an interferometric modulator.
Fig. 7 D is the sectional view of an alternate embodiment again of an interferometric modulator.
Fig. 7 E is the sectional view of the another alternate embodiment of an interferometric modulator.
Fig. 8 A-8C is according to an embodiment, is formed at the sectional view of the interferometric modulator on the substrate of patterning in advance.
Fig. 8 D is according to another embodiment, is formed at the sectional view of the interferometric modulator on the substrate of patterning in advance.
Fig. 8 E is according to an embodiment again, is formed at the sectional view of the interferometric modulator on the substrate of patterning in advance.
Embodiment
Hereinafter describe in detail and relate to some embodiments of the invention.Yet the present invention can implement by multitude of different ways.In this explanation, can in institute's drawings attached, use identical numbering to identify identical parts with reference to accompanying drawing.Find out easily that according to following explanation these embodiment may be implemented in arbitrary device that is configured to display image (no matter no matter is dynamic image (for example video) or still image (for example rest image), be character image or picture).More specifically, the present invention is contained: the present invention can implement in inferior numerous electronic installations or is associated with those electronic installations for example (but being not limited to): mobile phone, wireless device, personal digital assistant (PDA), handheld computer or portable computer, gps receiver/omniselector, camera, the MP3 player, video camera, game console, wrist-watch, clock and watch, counter, TV monitor, flat-panel monitor, computer monitor, automotive displays (for example mileometer display etc.), driving cabin control device and/or display, camera scenery display (for example rear view cameras display of vehicle), electronic photo, electronics billboard or label, projector, building structure, packing and aesthetic structures (for example image display on jewelry).The MEMS device that has similar structures with MESE device described herein also can be used for non-display application, for example is used for electronic switching device.
A kind of interferometric modulator display embodiment that comprises an interfere type MEMS display element of graphic extension in Fig. 1.In these devices, pixel is in bright or dark state.Under bright (" on (opening) " or " Open (opening) ") state, display element reflexes to the user with most of incident visible light.Be in dark (" off (pass) " or " Closed (closing) ") state following time, display element reflects the incident visible light to the user hardly.Decide on different embodiment, can put upside down the light reflectance properties that " on (opening) " reaches " off (pass) " state.The MEMS pixel can be configured to mainly reflect under selected color, also can realize colored the demonstration except that black and white.
Fig. 1 is first-class axle figure, and it illustrates two neighbors in a series of pixels in the visual displays, and wherein each pixel comprises a MEMS interferometric modulator.In certain embodiments, an interferometric modulator display comprises a row/column array that is made of these interferometric modulators.Each interferometric modulator comprises a pair of reflection horizon, and this is positioned to each other to have a variable-sized optical resonator at a distance of a variable and controlled distance at least to form one to the reflection horizon.In one embodiment, one of them reflection horizon can be moved between the two positions.Be referred to herein as on the primary importance of slack position, this displaceable layers is positioned apart from a fixing local reflex layer distance far away relatively.Be called in this article on the second place that is subjected to active position, removable reflection horizon is positioned to more contiguous local reflex layer.Decide position according to removable reflection horizon, from the incident light of this two layers reflection can with mutually long or mutually the mode of disappearing interfere, thereby form the mass reflex or the non-reflective state of each pixel.
The pixel array portion that is illustrated in Fig. 1 comprises two adjacent interferometric modulator 12a and 12b.In the interferometric modulator 12a in left side, show that a removable reflection horizon 14a is in a slack position, this slack position distance one comprises Optical stack 16a one preset distance of a local reflex layer.In the interferometric modulator 12b on right side, show that a removable reflection horizon 14b is in a position of being activated near Optical stack 16b.
Optical stack 16a mentioned herein and 16b (being referred to as Optical stack 16) are made of the layer of several fusions usually, and this can comprise electrode layer (for example tin indium oxide (ITO)), local reflex layer (for example chromium), reach transparent dielectric.Therefore Optical stack 16 is electric conductivity, local transparent and local reflex, and can for example make by the one or more layers in above-mentioned each layer are deposited on the transparent substrates 20.In certain embodiments, described layer is patterned into parallel band, and can form the column electrode in the display device, as further specifying hereinafter. Removable reflection horizon 14a, 14b can form by the one or more depositing metal layers that are deposited on pillar 18 tops (and column electrode 16a, 16b quadrature) and be deposited on the series of parallel band that the middle expendable material between the pillar 18 constitutes.After expendable material is etched, removable reflection horizon 14a, 14b and Optical stack 16a, the 16b regulation air gap 19 of being separated by.Reflection horizon 14 can be used has high conductivity and reflexive material (for example aluminium), and these bands can form the row electrode in the display device.
When not applying voltage, cavity 19 remains between removable reflection horizon 14a and the Optical stack 16a, and wherein removable reflection horizon 14a is in the mechanical relaxation state, shown in the pixel 12a among Fig. 1.Yet after a selected row and column applies potential difference (PD), the capacitor that forms in the described row and column electrode intersection at respective pixel place becomes charged state, and electrostatic force pulls to these electrodes together.If described voltage is enough high, the 14 meeting distortion of then removable reflection horizon also are forced to compress Optical stack 16.Dielectric layer in the Optical stack 16 (not showing in the figure) can prevent the spacing distance between short circuit and key- course 14 and 16, shown in the pixel 12b on the right among Fig. 1.Regardless of the potential difference (PD) polarity that is applied, its behavior is all identical.This shows that the may command reflection activates to the row/row of non-reflective pixel state and activates similar in many aspects to row used in traditional LCD and other display techniques/row.
An example process and system that in display application, uses array of interferometric modulators of Fig. 2 to Fig. 5 B graphic extension.
Fig. 2 is a system block diagrams, and its graphic extension one can embody an embodiment of the electronic installation of each side of the present invention.In this exemplary embodiment, this electronic installation comprises a processor 21, and this processor 21 can be any general purpose single-chip or multicore sheet microprocessor, for example ARM,
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Or any special microprocessor, for example digital signal processor, microcontroller or programmable gate array.According to convention in the industry, processor 21 can be configured to carry out one or more software modules.Except that carrying out an operating system, also this processor can be configured to carry out one or more software applications, comprise web browser, telephony application, e-mail program or any other software application.
In one embodiment, processor 21 also is configured to communicate with array driver 22.In one embodiment, array driver 22 comprises a horizontal drive circuit 24 and the column drive circuit 26 that signal is provided to an array of display or panel 30.Array sectional view shown in Fig. 1 illustrates with line 1-1 in Fig. 2.For the MEMS interferometric modulator, described row/row activated protocol can be utilized the hysteresis property of these devices shown in Figure 3.It for example may need one 10 volts potential difference (PD) that one displaceable layers is deformed into from relaxed state to be subjected to state of activation.Yet, when this voltage when this value reduces, reduce when being back to below 10 volts at this voltage, this displaceable layers will keep its state.In exemplary embodiment shown in Figure 3, before voltage drop was low to moderate below 2 volts, displaceable layers was not exclusively lax.Therefore, in example shown in Figure 3, exist one to be approximately 3 to 7 volts voltage range, have one and apply voltage window in this voltage range, in this window, this device is stabilized in lax or is subjected to state of activation.Be referred to as " lag windwo " or " stability window " in this article.For an array of display with hysteresis characteristic shown in Figure 3, OK/row activate agreement and can be designed to be expert at during the gating and to apply about 10 a volts voltage difference to the selected pixel that will be activated in current, and apply one near 0 volt voltage difference to the pixel that will relax.After gating, it is poor to apply about 5 a volts steady state voltage to pixel, and gating makes its residing any state so that its maintenance is expert at.In this example, after being written into, each pixel is all born a potential difference (PD) that is in the 3-7 volt " stability window ".What this characteristic made that pixel design shown in Figure 1 is stabilized in a preexist under identical the voltage conditions that applies is subjected to state of activation or relaxed state.Because no matter each pixel of interference modulator is in and is subjected to state of activation or relaxed state, in fact all be one by this fixed reflector and capacitor that mobile reflection horizon constituted, therefore, this steady state (SS) can be maintained at the interior voltage of this lag windwo consumed power down and hardly.If the current potential that is applied is fixed, then there is not electric current to flow into pixel in fact.
In the typical case uses, can by according in first row desired one group be excited to look exactly like and plainly determine that one group of row electrode forms a display frame.After this, a horizontal pulse is applied to the electrode of the 1st row, thereby activates the pixel corresponding with determined alignment.After this, determined one group of row electrode is become with second row in desired one group be excited to look exactly like plain corresponding.After this, with a pulse be applied to the 2nd the row electrode, thereby according to determined row electrode activate the 2nd the row in respective pixel.The pixel of the 1st row is not subjected to the influence of the pulse of the 2nd row, thereby the state that keeps it to set at the impulse duration of the 1st row.Can by one in proper order mode the row of whole series is repeated above-mentioned steps, to form this frame.Usually, repeating this process continuously by the speed with a certain desired frame number/second to refresh and/or upgrade these frames with new video data.Also have a variety of row and the row electrodes that are used to drive pel array to be known by people, and can use with the present invention with the agreement that forms display frame.
A kind of possible activated protocol that is used on 3x3 array shown in Figure 2, forming a display frame of Fig. 4,5A and 5B graphic extension.Fig. 4 shows one group of possible row and column voltage level of can be used for having the pixel of hysteresis curve shown in Figure 3.In the embodiment of Fig. 4, activate a pixel comprise with accordingly row be set to-V Bias voltage, and will go accordingly and be set to+Δ V, it can correspond respectively to-5 volts and+5 volts.Making pixel lax then is to be set to+V by being listed as accordingly Partially PressAnd will go accordingly and be set to identical+Δ V and realize with the potential difference (PD) that forms one 0 volts at these pixel two ends.Remain in 0 volt the row at those row voltages, it is to be in+V that nothing is discussed point by point Bias voltageStill-V Bias voltage, pixel all is stable at its initial residing any state.As shown in also in Fig. 4, should be appreciated that, also can use the voltage that has opposite polarity with top described voltage, for example, activate a pixel can relate to accordingly row be set to+V Bias voltageAnd will go accordingly and be set to-Δ V.In this embodiment, discharging pixel is to be set to-V by being listed as accordingly Bias voltageThereby and will go accordingly and be set to identical-Δ V and form one 0 volts potential difference (PD) at the pixel two ends and realize.As shown in also in Fig. 4, should be appreciated that, also can use the voltage that has opposite polarity with top described voltage, for example, activate a pixel can relate to accordingly row be set to+V Bias voltageAnd will go accordingly and be set to-Δ V.In this embodiment, discharging pixel is to be set to-V by being listed as accordingly Bias voltageThereby and will go accordingly and be set to identical-Δ V and form one 0 volts potential difference (PD) at the pixel two ends and realize.
Fig. 5 B is the sequential chart of a series of row of demonstration and column signal, and these signals are applied to 3x3 array shown in Figure 2, and it will form the demonstration shown in Fig. 5 A and arrange, wherein is excited to look exactly like plain for non-reflexive.Before writing the frame shown in Fig. 5 A, pixel can be in any state, and in this example, and all row all are in 0 volt, and all row all be in+5 volts.Under the voltage that these applied, all pixels all are stable at its existing state of activation or relaxed state of being subjected to.
In the frame shown in Fig. 5 A, pixel (1,1), (1,2), (2,2), (3,2) and (3,3) are activated.For realizing this effect, during one " the line time " of the 1st row, the 1st row and the 2nd row are set at-5 volts, and the 3rd row are set at+5 volts.This can not change the state of any pixel, because all pixels all remain in the stability window of 3-7 volt.After this, rise to 5 volts of pulses that roll back 0 volt then again down by one from 0 volt and come gating the 1st row.Activate pixel (1,1) and (1,2) thus and make pixel (1,3) lax.Other pixels in the array are all unaffected.For the 2nd row is set at desired state, the 2nd row is set at-5 volts, and the 1st row and the 3rd row are set at+5 volts.After this, the identical strobe pulse that is applied to the 2nd row will activate pixel (2,2) and make pixel (2,1) and (2,3) relax.Equally, other pixels in the array are all unaffected.Similarly, by the 2nd row and the 3rd row are set at-5 volts and be listed as the 1st be set at+5 volts set the 3rd capable.The 3rd row strobe pulse is set at the state shown in Fig. 5 A with the 3rd row pixel.After writing incoming frame, the row current potential is 0, and the row current potential can remain on+5 or-5 volts, and after this demonstration will be stable at the layout shown in Fig. 5 A.Should be appreciated that, can use identical programs the array that constitutes by tens of or hundreds of row and columns.Should also be clear that, be used to carry out the timing of the voltage that row and row activate, in proper order, and the cardinal principle principle that can be summarized in the above of level in alter a great deal, and above-mentioned example is an exemplary, and any activation voltage method can be used with system and method as herein described.
Fig. 6 A and 6B are the system block diagrams of an embodiment of graphic extension one display device 40.Display device 40 for example can be cellular phone or mobile phone.Yet the same components of display device 40 and the form of doing slightly to change thereof also can be used as for example illustration of all kinds such as TV and portable electronic device display device.
Display device 40 comprises a shell 41, a display 30, an antenna 43, a loudspeaker 44, an input media 48, reaches a microphone 46.Shell 41 comprises injection moulding and vacuum forming usually by any the making in the known many kinds of manufacturing process of those skilled in the art.In addition, shell 41 can include but not limited to plastics, metal, glass, rubber and pottery by any the making in the many kinds of materials, or the one combination.In one embodiment, shell 41 comprises the removable section (not shown), the removable section exchange that it can have different colours with other or comprise unlike signal, picture or symbol.
The display 30 of exemplary display device 40 can be any in the numerous kinds of displays, comprises bi-stable display as herein described.In other embodiments, well-known as the those skilled in the art, display 30 comprises a flat-panel monitor, plasma scope for example mentioned above, EL, OLED, STN LCD or TFT LCD, or non-tablet display, for example CRT or other kinescope devices.Yet for ease of the explanation present embodiment, as described herein, display 30 comprises an interferometric modulator display.
The assembly of an embodiment of schematically graphic extension exemplary display device 40 in Fig. 6 B.Example illustrated display device 40 comprises a shell 41, and can comprise that other are closed in assembly wherein at least in part.For example, in one embodiment, exemplary display device 40 comprises a network interface 27, and network interface 27 comprises that one is coupled to the antenna 43 of a transceiver 47.Transceiver 47 is connected to processor 21, and processor 21 is connected to again regulates hardware 52.Regulating hardware 52 can be configured to a signal is regulated (for example a signal being carried out filtering).Regulate software 52 and be connected to a loudspeaker 45 and a microphone 46.Processor 21 also is connected to an input media 48 and a driving governor 29.Driving governor 29 is coupled to one frame buffer 28 and is coupled to array driver 22, and array driver 22 is coupled to an array of display 30 again.One power supply 50 requires to be all component power supply according to the designing institute of particular exemplary display device 40.
Network interface 27 comprises antenna 43 and transceiver 47, so that exemplary display device 40 can communicate by network and one or more device.In one embodiment, network interface 27 also can have some processing capacity, to reduce the requirement to processor 21.Antenna 43 is to be used to transmit and receive the antenna of signal for known to the those skilled in the art any.In one embodiment, this antenna is launched according to IEEE 802.11 standards (comprising IEEE 802.11 (a), (b), or (g)) and is received the RF signal.In another embodiment, this antenna is launched according to bluetooth (BLUETOOTH) standard and is received the RF signal.If be cellular phone, then this antenna is designed to receive CDMA, GSM, AMPS or other and is used for the known signal that communicates at the mobile phone network.47 pairs of signals that receive from antenna 43 of transceiver carry out pre-service, so that it can be received and further be handled by processor 21.Transceiver 47 is also handled the signal that self processor 21 receives, so that they can be by antenna 43 from exemplary display device 40 emissions.
In an alternate embodiment, can use a receiver to replace transceiver 47.In an alternate embodiment again, network interface 27 can be substituted by the image source that can store or produce the view data that will be sent to processor 21.For example, this image source can be the software module that hard disk drive or that digital video disk (DVD) or contains view data produces view data.
The overall operation of processor 21 common control examples display device 40.Processor 21 automatic network interfaces 27 or an image source receive data, for example compressed view data, and this data processing become raw image data or a kind of form that is easy to be processed into raw image data.Then, the data after processor 21 will be handled are sent to driving governor 29 or are sent to frame buffer 28 and store.Raw data typically refers to the information of the characteristics of image of each position in sign one image.For example, these characteristics of image can comprise color, saturation degree and gray level.
In one embodiment, processor 21 comprises a microcontroller, CPU or is used for the logical block of the operation of control examples display device 40.Regulating hardware 52 generally includes and is used for transmitting and from the amplifier and the wave filter of microphone 46 received signals to loudspeaker 45.Adjusting hardware 52 can be the discrete component in the exemplary display device 40, perhaps can incorporate in processor 21 or other assemblies.
Driving governor 29 direct self processors 21 or obtain the raw image data that produces by processor 21 from frame buffer 28, and suitably with the raw image data reformatting so as high-speed transfer to array driver 22.Particularly, driving governor 29 is reformated into a data stream with raster-like format with raw image data, so that it has a chronological order that is suitable for scanning array of display 30.Then, the information after driving governor 29 will format is sent to array driver 22.Although a driving governor 29 (a for example lcd controller) usually as one independently integrated circuit (IC) be associated with system processor 21, these controllers can make up by many kinds of modes.It can be used as hardware and is embedded in the processor 21, is embedded in the processor 21 or fully-integrated with example, in hardware and array driver 22 as software.
Usually, the self-driven controllers 29 of array driver 22 receive the information after the format and video data are reformated into one group of parallel waveform, and the parallel waveform per second of this group many times is applied to from hundreds of of the x-y picture element matrix of display and thousands of lead-in wires sometimes.
In one embodiment, driving governor 29, array driver 22, and array of display 30 be applicable to the display of arbitrary type described herein.For example, in one embodiment, driving governor 29 is a traditional display controller or bistable display controllers (a for example interferometric modulator controller).In another embodiment, array driver 22 is a legacy drive or a bistable display driver (a for example interferometric modulator display).In one embodiment, a driving governor 29 integrates with array driver 22.This embodiment is very common in the integrated system of for example cellular phone, wrist-watch and other small-area display equal altitudes.In another embodiment, array of display 30 is a typical array of display or a bistable array of display (a for example display that comprises an interferometric modulator array).
Input media 48 makes the operation that the user can control examples display device 40.In one embodiment, input media 48 comprises a keypad (for example a qwerty keyboard or a telephone keypad), a button, a switch, a touch sensitive screen, a pressure-sensitive or thermosensitive film.In one embodiment, microphone 46 is input medias of exemplary display device 40.When using microphone 46, can provide voice command to come the operation of control examples display device 40 by the user to these device input data.
Power supply 50 can comprise numerous kinds of energy storing devices, and this is well-known in affiliated field.For example, in one embodiment, power supply 50 is a rechargeable batteries, for example a nickel-cadmium cell or lithium ion battery.In another embodiment, power supply 50 is a regenerative resource, capacitor or solar cell, comprises a plastic solar cell and solar cell coating.In another embodiment, the socket that is configured to from the wall of power supply 50 receives electric power.
In certain embodiments, as mentioned above, the control programmability resides in a driving governor that can be arranged in several positions of electronic display system.In some cases, the control programmability resides in the array driver 22.The those skilled in the art will know, can reach the above-mentioned optimization of enforcement in different configurations in number of hardware and/or the component software arbitrarily.
Detailed structure according to the interferometric modulator of above-mentioned principle operation can be ever-changing.For example, five different embodiment of removable reflection horizon 14 of Fig. 7 A-7E graphic extension and supporting construction thereof.Fig. 7 A is a sectional view embodiment illustrated in fig. 1, wherein deposition one strip of metal material 14 on the support member 18 that quadrature extends.In Fig. 7 B, removable reflection horizon 14 only is on the tethers 32 at corner and is attached to support member.In Fig. 7 C, removable reflection horizon 14 hangs on the deformable layer 34, and deformable layer 34 can comprise a kind of flexible metal.Deformable layer 34 is connected on the substrate 20 around the periphery of deformable layer 34 directly or indirectly.These are connected and are called support column herein.Embodiment shown in Fig. 7 D has support column embolism 42, and deformable layer 34 promptly is positioned on the support column embolism 42.As shown in Fig. 7 A-7C, removable reflection horizon 14 keeps being suspended in above the cavity, but deformable layer 34 does not form support column by the hole of filling between deformable layer 34 and the Optical stack 16.But, form described support column by the smoothing material that is used to form support column embolism 42.Embodiment shown in Fig. 7 E is based on the embodiment shown in Fig. 7 D, but also can use through revising with other embodiment with arbitrary embodiment shown in Fig. 7 A-7C and not demonstration.In the embodiment shown in Fig. 7 E, used extra layer of metal or other conductive materials to form bus structure 44.This makes the signal can be along the back side route of interferometric modulator, thereby has eliminated originally the some electrodes that may palpiform be formed on the substrate 20.
For example in those embodiment shown in Figure 7, interferometric modulator is as the direct-viewing type device, and wherein the front side of self-induced transparency substrate 20 (with the top relative side of side that is furnished with modulator) watches image.In these embodiments, reflection horizon 14 optically shields the part on the reflection horizon side relative with substrate 20 of being positioned at of interferometric modulator, comprises deformable layer 34.This makes it possible to configuration and operation conductively-closed zone, and can influence image quality sharply.This kind shielding allows to exist the bus structure 44 among Fig. 7 E, the ability that this can provide the optical characteristics that makes modulator to separate with the electromechanical properties of modulator, for example addressing and because of moving that addressing causes.The separable modulator architecture of this kind make to the dynamo-electric aspect of modulator used with the optics aspect of modulator used structural design and material can be selected and be played a role independently of each other.And the embodiment shown in Fig. 7 C-7E has the additional advantage that obtains from its mechanical property de (this is implemented by deformable layer 34) because of the optical characteristics with reflection horizon 14.This can be optimized the structural design in reflection horizon 14 and material therefor aspect optical characteristics, and the structural design of deformable layer 34 and material therefor can be optimized aspect the desired mechanical property.
As discussed above, interferometric modulator is configured to reflect the light that passes transparent substrates, and comprises moving-member, for example removable minute surface 14a, 14b.Therefore, can move for making these moving-members, preferable formation one air gap or cavity so that the mechanical part of interferometric modulator (for example removable minute surface 14a 14b) can move.
Fig. 8 A-8C is the sectional view that is formed at the interferometric modulator on the substrate of patterning in advance according to an embodiment.Find when the substrate that uses once patterning in advance, to have step related in the interferometric modulator of function mentioned above in manufacturing and can be adapted to the very effective manufacturing technology of cost.One embodiment of this kind of Fig. 8 A-8C graphic extension method, its can form a kind of from the interferometric modulator of watching above with reference to the relative side of the described interferometric modulator of Fig. 1-7E.Final application on described device is decided, and makes one sometimes and sees through display that substrate watches with preferable, and make display that a sedimentary deposit that sees through interferometric modulator watches sometimes with preferable.Therefore, for this kind design, do not need to use a transparent substrates (for example in the transparent substrates 20 shown in Fig. 7 A-7E) that will form described interferometric modulator in the above.Described pre-patterned substrate therefore both can be opaque also can be transparent.In the illustrated embodiment shown in Fig. 8 A-8C, pre-patterned substrate is preferable opaque, and this makes it possible to select to help the material of embossing.
According at the embodiment shown in Fig. 8 A-8C, an interferometric modulator is formed on the substrate 505 of patterning in advance.Preferable a substrate 505 that wherein is formed with groove 507 is covered with a mirror layer, to form a bottom electrode (half reflectivity or reflectivity member) 502, it will be as fixed bed mentioned above.
Substrate 505 can form from a preferable opaque polymeric material, and this preferable opaque polymeric material has a series of impression and suitable alternate groove or grooves 507 that stretch in one direction along substrate surface.These grooves 507 can adopt various traditional materials, use known technology to be embossed into preferable reentrant profile with a band tapered side, as shown in Fig. 8 A-8C.In a preferred embodiment, substrate 505 impressions that form by compound substance, punching press, ablation, molded or mechanically be printed on groove or groove, and obtain described reentrant profile through curing subsequently.Be understood by those skilled in the art that this kind compound substance is preferable to be formed and after punching press or impressing described substrate, cured and can cause different thermal expansions in these different layers by the different materials that is arranged in different layers.In the embodiment shown, top layer has a higher thermal expansivity, thereby causes being expanded in the groove 507.Although be preferably reentrant profile, yet be understood by those skilled in the art that, groove 507 also can have other shapes (for example vertical wall), as long as form a breakpoint in the material of these grooves on being deposited on substrate 505 end faces as being described in more detail hereinafter.Should be appreciated that, and technology that also can be by being different from impression (for example, for example, etching) be formed in the substrate 505.Yet preferable use impression or punching press are because it is a kind of technology of cheapness.
When deposition materials on this kind surface structure, some material will be deposited and settled in the groove 507, and some material will be deposited and settled on substrate 505 end faces, between each groove 507.Described material is preferable to be deposited by conventional deposition, and for example sputter, the physical gas by certain form deposits and chemical gas deposition (CVD).As shown in Fig. 8 A-8C, form breakpoint or discontinuous point in the sedimentary deposit of the existence meeting of groove 507 on substrate 505 end faces.By this kind mode, at the lower layer 502,508,510 of the situation deposit interferometric modulator that does not use conventional photolithography and etching step.In this embodiment, in fact, the first group of mask that forms structure shown in Fig. 7 A-7E incorporated in the substrate 505 self, and in fact can be replaced traditional coverage by the imprint process of the economy that is used for initial electrode pattern.According to this embodiment, therefore the preceding several steps that interferometric modulator structure is made be deposited lower electrode 501, a dielectric material 508, reach one deck expendable material 510.Therefore the layer of institute's deposited lower electrode 502, dielectric material 508 and expendable material 510 is to embark on journey or the form of band is formed on the end face of substrate 505.Described ribbon structure is to make naturally because of the existence of institute's embossed grooves 507.
Lower electrode 502 is preferable to be formed by aluminium.In other embodiments, lower electrode 502 can comprise other high reflection metals, for example (for example) silver (Ag) or gold (Au).Perhaps, lower electrode 502 can be one and is configured to dispose the metal stack that appropriate optical property and engineering properties are provided.
The preferable dielectric layer 508 that on lower electrode 502, deposits.In a preferred embodiment, described dielectric material is silicon dioxide (SiO 2).Preferable (and the after this removing) sacrifice layer 510 that on described structure, deposits, between lower electrode 502 and a upper electrode or reflecting member 506, to form an optical resonator, described upper electrode or reflecting member 506 will be deposited on above the sacrifice layer 510 forming displaceable layers, as shown in Fig. 8 B.In the embodiment shown, sacrifice layer 510 comprises silicon (Si).In other embodiments, this sacrifice layer 510 can be formed by molybdenum (Mo), tungsten (W) or titanium (Ti).Can come all these expendable materials of optionally etching with respect to dielectric material that exposes and electrode material, but the those skilled in the art will know easily, also other expendable materials (for example photoresist) can be used with other selective etch chemicals.
As shown in Fig. 8 B, in this embodiment, proceed the manufacturing of interferometric modulator structure by the zone between filling groove 507 and the previous institute depositional texture.This kind filling can be implemented by many traditional deposition/patternings/etching step or by an etch-back technics, and for example (for example) implemented by chemically mechanical polishing (CMP) planarisation step.
Preferable on sacrifice layer 510 upper electrode strips 506 of deposition quadrature, deposit subsequently by pillar 522 separate by one second or the band that forms of top expendable material 520.This upper electrode 506 is deposited as the band of embarking on journey with lower electrode 502 quadratures, to form row/column array mentioned above.Upper electrode 506 and expendable material 520 can be deposited as band with its required pattern form by a kind of shadow mask deposition technique of preferable use.Pillar 522 is formed by insulating material (being preferably polymkeric substance or dielectric material).
Then, preferable on upper sacrificial layer 520 semi-reflective layer 530 of deposition of thin (being preferably the 50-100 dust).In preferred embodiment, semi-reflective layer 530 is a chromium.As shown in Fig. 8 B, deposit transparent material or watch member 535 on semi-reflective layer 530, think that semi-reflective layer 530 provides extra machinery and structural integrity-after removing sacrifice layer 510,520, semi-reflective layer 530 is too thin usually and can't support himself.Be understood by those skilled in the art that transparent substrates 535 is born mechanical function and served as the member that shows and pass through its transmitted light by it.Transparent substrates 535 can be formed by solid mineral materials such as for example oxides.In another embodiment, transparent substrates 535 can be formed by transparent polymer.Semi-reflective layer 530 and transparent substrates are preferable to form by conventional deposition such as for example sputter, PVD and CVD deposition.
Transparent material 535 and semi-reflective layer 530 preferable etchings have perforate or hole (not shown), can arrive layer 510 and 520 expendable material to be used in the etching gas that removes sacrifice layer.Another is chosen as, and transparent material 535 patterning in advance has the perforate or the hole of etching in advance or impression.Should be appreciated that,, interferometric modulator is sealed and protects it to avoid holding the influence of the encapsulation surrounding environment of interferometric modulator as the part of overall packaging technology.Preferably, these holes or perforate have little to etching system with the diameter that allows, and goodly be about 2.4 microns.Be understood by those skilled in the art that the size of perforate, spacing and quantity will influence the speed that removes of sacrifice layer 510,520.
Preferable use selective gas etch process removes sacrifice layer 510,520, to form optical cavities around travelling electrode 506.Can use standard etch techniques to remove sacrifice layer 510,520.Concrete gas etch technology will depend on the material that will remove.For example, can use xenon difluoride (XeF 2) remove sacrificial silicon layer as releasing off gas.Should be appreciated that described etch process is a kind of selective etch technology, it can any dielectric material of etching, half reflection material or electrode material.
The final structure of interferometric modulator is shown among Fig. 8 C, wherein has the optical cavities around traveling electrode 506.Because semi-reflective layer 530 is positioned at the top, thereby on each sedimentary deposit side, sees through transparent substrates 535 along the direction of arrow 540 and watch interferometric modulator, as shown in Fig. 8 C.
In Fig. 8 A-8C illustrated embodiment, should be appreciated that, contiguous transparent substrates 535 of the displaceable layers 506 of interferometric modulator and fixed bed 502 are formed at below the displaceable layers 506, so that displaceable layers 506 can move in the optical cavities of described structure, as shown in Fig. 8 C.
Be understood by those skilled in the art that in Fig. 8 D illustrated embodiment, semi-reflective layer 530 is preferably chromium and can uses a transparency electrode (be preferably an ITO layer and be used as an electrode) to be replenished.As shown in Fig. 8 D, ITO layer 532 is between transparent substrates 535 and chromium layer 530.This ITO-chromium double-decker has been eliminated the lower electrode 502 and dielectric 508 these needs that uses in Fig. 8 A-8C illustrated embodiment.In this embodiment, a dielectric layer 508 is between chromium 530 and upper cavity.Be understood by those skilled in the art that, one first sacrifice layer (not shown) is deposited on the pre-patterned transparent substrates 505 and removed subsequently and form a lower cavity 560, and one second sacrifice layer (not shown) is deposited on above the electrode 506 and forms upper cavity 565.As shown in Fig. 8 D, electrode 506 is deposited on the pre-patterned substrate 505, thereby forms the electrode band on substrate 505 end faces, wherein forms discontinuous point in the electrode 506 by being deposited on groove 507 tops.
As described above, the transparent pre-patterned substrate of making from transparent materials such as polymkeric substance for example can be used for forming and is similar to the interferometric modulator shown in Fig. 7 A-7E.In this kind interferometric modulator, as shown in Fig. 8 E, be different from the embodiment shown in Fig. 8 A-8C, transparent pre-patterned substrate 580 transmitted lights, and see through transparent pre-patterned substrate 580 and watch.Be understood by those skilled in the art that the technology that is used to make this kind interferometric modulator is similar to the described method above with reference to Fig. 8 A-8C, but electrode structure will reverse.Described structure will be similar to shown in Fig. 7 A-7E, but eliminate preceding several patternings and the etching step that is used to form described row by preceding several layers that deposition on groove 507 is embarked on journey.
As shown in Fig. 8 E, on substrate 580, deposit half reflection-ITO bilayer 530,532, to form the electrode band.At half reflection-deposition one dielectric layer 508 above the ITO bilayer 530,532.Then, deposit one first sacrifice layer (not shown) and also subsequently it is removed, to form a lower cavity 560.On first sacrifice layer, deposit travelling electrode 506 with the orthogonal stripes form.Deposition one second sacrifice layer (not shown) also removes it subsequently on travelling electrode 506, to form upper cavity 565.As shown in Fig. 8 E, travelling electrode 506 is in collapsed state.Be this structure that completes, on upper cavity 565, form a deformable layer 570.
Show, illustrate and point out the novel feature that is applicable to various embodiment of the present invention although above describe in detail, yet should be appreciated that, the those skilled in the art can make various omissions, substitute and change shown device or technology on form and details, and this does not deviate from spirit of the present invention.Should know, use or put into practice some feature, thereby can implement the present invention by a kind of form of all features described herein and advantage that do not provide owing to can be independent of other features.

Claims (48)

1, a kind of method of making MEMS devices, it comprises:
Substrate is provided, and it has a plurality of grooves in the end face of described substrate;
Deposition first electrode layer enters in the described groove on the described end face of described substrate, and wherein said first electrode layer that deposits is discontinuous between described groove and described end face;
On described first electrode layer, form second electrode; And
Form first cavity between first electrode layer on the described substrate and described second electrode described being formed at.
2, the method for claim 1, it further comprises makes described first electrode layer and described second electrode insulation.
3, method as claimed in claim 2, wherein isolation step is included in deposition of dielectric materials on described first electrode layer.
4, method as claimed in claim 3, wherein by before forming described second electrode in sacrificial material on the described dielectric material and remove described expendable material after forming described second electrode and form described first cavity.
5, the method for claim 1, it further is included in and forms second cavity between described second electrode and the semi-reflective layer.
6, method as claimed in claim 5 wherein forms described second cavity and comprises: removed described expendable material in sacrificial material on described second electrode and after forming described semi-reflective layer before forming described semi-reflective layer.
7, method as claimed in claim 5, wherein said semi-reflective layer comprises chromium.
8, method as claimed in claim 5, it further is included in deposit transparent material on the described semi-reflective layer.
9, method as claimed in claim 8 wherein forms described first cavity and comprises: removed described expendable material in sacrificial material on the described dielectric material and after forming described second electrode before forming described second electrode.
10, method as claimed in claim 9, wherein before removing described first sacrifice layer, described transparent material and semi-reflective layer etching have perforate.
11, the method for claim 1 wherein provides step to be included in the described groove of impression in the described substrate.
12, the method for claim 1 wherein provides step to be included in the described groove of ablating in the described substrate.
13, the method for claim 1 wherein provides step to comprise by molding process and form described groove in described substrate.
14, the method for claim 1, the uncontinuity of wherein said first electrode layer at described groove place makes the described first electrode layer patterning.
15, the method for claim 1, wherein said MEMS devices are interferometric modulator.
16, a kind of MEMS devices that forms by the method for claim 1.
17, a kind of display device, it comprises:
Through the substrate of impression, it has a plurality of grooves in the end face that is formed at described substrate;
First electrode layer, it is formed on the described end face of described substrate and enters in described a plurality of groove, and described first electrode layer is discontinuous between described a plurality of grooves and described end face; And
Second electrode, wherein said second electrode is formed on described first electrode layer, and wherein said first electrode layer and described second electrode separate by first cavity.
18, display device as claimed in claim 17, wherein said first electrode layer and described second electrode are by being deposited on dielectric material on described first electrode layer and mutually insulated.
19, display device as claimed in claim 17, each in wherein said a plurality of grooves all has reentrant profile.
20, display device as claimed in claim 17, wherein said substrate is opaque.
21, display device as claimed in claim 17, wherein said first electrode layer forms first electrode with the described second electrode quadrature.
22, display device as claimed in claim 17, it is movably that wherein said second electrode is configured to.
23, display device as claimed in claim 17, it further comprises: semi-reflective layer, it separates by second cavity and described second electrode; And be formed at transparent material on the described semi-reflective layer.
24, display device as claimed in claim 23 is formed with a plurality of holes in the wherein said transparent material.
25, display device as claimed in claim 17, it further comprises:
At least one electric connection in the processor, itself and described first electrode layer and described second electrode, described processor is configured to image data processing; And
Memory storage, itself and described processor electric connection.
26, display device as claimed in claim 25, it further comprises driving circuit, described driving circuit is configured in described first electrode layer and described second electrode at least one and sends at least one signal.
27, display device as claimed in claim 26, it further comprises controller, described controller is configured at least a portion of described view data is sent to described driving circuit.
28, display device as claimed in claim 25, it further comprises image source module, described image source module is configured to described image data transmission to described processor.
29, display device as claimed in claim 28, wherein said image source module comprise receiver, transceiver, and transmitter at least one.
30, display device as claimed in claim 25, it further comprises input media, described input media is configured to receive the input data and described input data is sent to described processor.
31, a kind of method that forms MEMS devices, it comprises:
Substrate with end face is provided, wherein in described end face, forms a plurality of grooves;
At least one layer of deposition on described substrate, wherein said at least one layer comprises first conductive material and discontinuous at described groove and described end face place, thereby forms each row of described layer between the described groove on the described end face; And
Deposit second conductive material, described first conductive material on wherein said second conductive material and the described end face is oriented orthogonally to.
32, method as claimed in claim 31, wherein said at least one layer further comprises dielectric layer and expendable material.
33, method as claimed in claim 31, it further is included in and forms first cavity between described first conductive material and described second conductive material.
34, method as claimed in claim 32, it further is included on described second conductive material and deposits semi-reflective layer, and wherein said semi-reflective layer and described second conductive material separate by cavity.
35, method as claimed in claim 34 wherein forms described cavity between described chromium layer and described second conductive material by removing expendable material between described semi-reflective layer and described second conductive material.
36, method as claimed in claim 31 wherein provides described a plurality of groove to comprise in described end face and impresses.
37, method as claimed in claim 36, it cures described substrate after further being included in impression, provides reentrant profile to give in the described groove each, and wherein said substrate is formed by compound substance.
38, method as claimed in claim 37, the top layer of wherein said compound substance have the thermal expansivity than the bottom floor height of described compound substance.
39, a kind of display device, it comprises:
Substrate, it has a plurality of grooves in the end face of described substrate;
Be used for catoptrical first reflecting member, described first reflecting member is formed on the described end face of described substrate and enters in the described groove, and described first reflecting member is discontinuous between described groove and described end face place; And
Be used for catoptrical second reflecting member, wherein said second reflecting member is formed on described first reflecting member, and wherein said first reflecting member and described second reflecting member separate by first partition member.
40, display device as claimed in claim 39, it further comprises:
The half reflection member, it separates by second partition member and described second reflecting member; And
The member of watching that is used for transmitted light, the described member of watching is formed on the described half reflection member.
41, display device as claimed in claim 39, the shape of wherein said groove make that described first reflecting member is discontinuous on the sidewall of described groove.
42, display device as claimed in claim 39, described first reflecting member on the described end face of wherein said substrate member form each row of described first reflecting member on described end face.
43, display device as claimed in claim 39, wherein said second reflecting member is second reflection horizon, it hangs on the connector that is attached to mechanical layer.
44, display device as claimed in claim 39, it further comprises the insulating component between described first reflecting member and described second reflecting member, wherein said insulating component is the dielectric layer that is positioned on described first reflecting member.
46, a kind of method of operation display device, it comprises:
Be provided at the substrate that has a plurality of grooves in its end face, wherein at least one first electrode layer is formed on the described end face of described substrate and enters in the described groove, and wherein said first electrode layer is discontinuous between described groove and described end face, and wherein said first electrode layer separates by the cavity and second electrode, and described second electrode is formed on the described cavity; And
In described cavity, move described second electrode.
47, method as claimed in claim 46 wherein moves described second electrode and is included in slack position and is subjected to move between the active position described second electrode.
48, method as claimed in claim 46 wherein moves described second electrode and can change described first electrode layer and described second distance between electrodes.
49, method as claimed in claim 46, wherein mobile described second electrode is included between described first electrode layer and described second electrode and applies electrostatic attraction.
CNB2005800312341A 2004-09-27 2005-08-22 MEMS device fabricated on a pre-patterned substrate Expired - Fee Related CN100501494C (en)

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