CN100492607C - 包括导电凸起的微电子器件及其制备方法 - Google Patents

包括导电凸起的微电子器件及其制备方法 Download PDF

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CN100492607C
CN100492607C CNB2004800271614A CN200480027161A CN100492607C CN 100492607 C CN100492607 C CN 100492607C CN B2004800271614 A CNB2004800271614 A CN B2004800271614A CN 200480027161 A CN200480027161 A CN 200480027161A CN 100492607 C CN100492607 C CN 100492607C
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layer
diffusion barrier
metal
convexity
base layer
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CN1853263A (zh
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M·玻尔
S·巴拉克利施南
V·杜宾
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Intel Corp
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Intel Corp
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Abstract

涉及管芯封装的方法、技术和结构。在一个典型实现中，管芯封装互连结构包括半导体衬底以及与所述半导体衬底接触的第一导电层。该第一导电层可包括基极层金属(230)。所述基极层金属可包括Cu。该典型实现还包括与所述第一导电层接触的扩散阻挡物(225)以及在所述扩散阻挡物之上的润湿层。凸起层(215)可位于所述润湿层之上，其中所述凸起层包括Sn并且Sn可被电镀。此外，所述扩散阻挡物还适于抑制凸起层中类晶须的形成。

Description

包括导电凸起的微电子器件及其制备方法
技术领域
本说明书涉及半导体工艺制造，尤其涉及制造在管芯封装内的集成电路凸起。
背景技术
在管芯封装工艺中，在管芯衬底和周围封装之间可放置多层导电层。管芯封装可以使用导电层来焊接并且焊接层可以与低层的导电层相接触。可以在所述低层导电层上形成图案使其具有一个或多个导电凸起，并可被称为“凸起”层。凸起可以接触直接或间接连接至所述衬底的基极层金属。所述凸起和基极层金属具有可能会导致一个或多个电迁移问题或层老化的一种或多种性质。
附图说明
图1A到图1D示出了典型的缺陷凸起示意图。
图2示出了制造结构的典型实施例。
图3是图2中示出的制造的典型实现的典型流程图。
图4示出了制造结构的典型实施例。
图5是图4中示出的制造的典型实现的典型流程图。
图6示出了制造结构的典型实施例。
图7是图6中示出的制造的典型实现的典型流程图。
图8示出了在电气/计算机系统中管芯封装结构的典型实现。
具体实施方式
本发明的一个或多个典型实施例的技术、方法和结构涉及集成电路和管芯封装。一个或多个典型实现尤其涉及在衬底上制造凸起以避免Cu和Sn的混合。本发明中的一个或多个典型实现可以减少与CuSn金属间形成有关的电迁移问题，并且可以减少一层或多层中晶须的形成。
将在附图和以下的描述中阐明一个或多个典型实现的细节。在一个典型实现中，一种装置包括半导体衬底以及与所述半导体衬底接触的第一导电层。第一导电层可包括基极层金属，诸如Cu。所述装置还包括与所述第一导电层接触的扩散阻挡物、在所述扩散阻挡物之上的润湿层以及在所述润湿层之上的凸起层。所述凸起层包括Sn。并且所述Sn凸起层可以是电镀的。扩散阻挡物可以防止Cu和Sn扩散通过所述扩散阻挡物。所述扩散阻挡物还能够抑制所述凸起层内类晶须的形成。一个或多个典型实现的其他性质和优点从所述说明和附图以及权利要求中显而易见。
在半导体晶片处理中，在衬底上形成器件和互连并电气连接至管芯封装。可以通过所述管芯封装和晶片上低层导电互连层之间的导电焊接层来实现与管芯封装的电气连接。所述焊接层有时包括Sn或Sn合金。所述导电互连层或相邻的导电层有时包括Cu。在某些实例中，导电互连层可以是最低层的金属层或者是最接近于所述衬底的金属层。这一金属层可被称为是基极层金属(BLM)。在某些实例中，所述基极层金属可用作扩散阻挡物以避免焊料迁移入该管芯的低层焊盘。该管芯的焊盘可以包括一层或多层金属层，诸如A1层。在本发明的一个或多个典型实现中，可以在基极层金属上形成一层用作在所述基极层金属中的Cu和在扩散阻挡物之上的Sn之间的扩散阻挡物。
在一层内使用Sn并在邻近层内使用Cu的管芯封装互连结构会导致该管芯互连的一个或多个有害问题。这些有害问题中的某一些会劣化该管芯封装互连的电学和机械性质，降低形成该互连的成品率，甚至会形成不规则的、不需要的区域，诸如晶须和分层。分层可包括一层或多层的劣化或物理分离。这些有害问题的一部分在图1A到图1D列举并且将在以下描述。
图1A和图1B示出了带有电学凸起分层的管芯封装互连的示意图。在图1A中的凸起110是包括了Sn合金和PbSn的焊料区。如标记区115所示，凸起110具有下层互连或基极层金属125相符合的形状。凸起110可以接触并覆盖下层互连或基极层金属的边缘和侧壁。
图1B示出了其中包括基极层金属125、PbSn凸起110和管芯衬底区130的区域115的示意图。在此示意图中，在衬底130和凸起110之间的层125和110出现了分层。这一分层是由所述基极层金属125的一种或多种性质导致的。所述基极层金属125可能会以其在烘烤或热处理期间的劣化的方式而被构造。劣化和分层会减少层125和110之间的导电表面区域并会产生电迁移相关的缺陷。
管芯封装互连中的某些缺陷可以是电迁移相关的缺陷，并且可由层材料和层分界面的性质引起其他缺陷。某些电迁移相关的缺陷是由层125和110的冶金学性质、增加的热问题以及层125和110之间一个或多个空隙120的生长所引起的。区域115内的电迁移会产生更高的电流密度并会增加电磁应力。如下将在一个或多个典型实现中描述，示出的方法、结构和技术能够减少电迁移相关的管芯封装互连的缺陷。
一层或多层管芯封装互连的某些冶金学性质会导致管芯封装互连的缺陷。这些冶金学性质的实例包括不兼容的表面、不同温度下材料的相变以及不同层元素的扩散和混合。例如，Sn是用于一层或多层管芯封装互连层的常用金属。然而Sn在不同的温度下存在两种同素异形体。在约13.2℃以上的温度下，坚硬、有光泽并导电的αSn(四方形结构、α相的Sn)处于稳定相。而当温度低于13.2℃时，βSn(金刚石立方结构、β相的Sn)则是热活泼的。α相是层结构中的首选相。由于两相的密度不同，所以α到β相的转化伴随着26％的体积膨胀。相变中的体积改变会使得Sn和其他层之间的分界面变形。而且βSn是粉末状的并且不具有可用于互连的机械强度。因此当Sn处于β相时，会使Sn层的机械强度和互连劣化。至少由于上述理由，Sn层或互连在低温下会从α相变成β相并导致互连缺陷。以下将在一个或多个典型实现中详述，示出的方法、技术和结构可以防止低温下Sn的相变。
虽然示出凸起110作为100中的焊料凸起，但是所述凸起可以不是焊料层而是与焊料层相邻层的凸起或凸起层。此外，凸起110不是直接接触所述管芯封装105。如在所述附图中描述，凸起或凸起层可以包括诸如Cu的其他材料并且可以直接连接至所述基极层金属或其他层互连。
图1C和图1D示出了不同层的Cu和Sn的非期望混合的实例。例如，图1C示出了在互连层内带有空隙155的管芯封装互连150。来自不同层的Cu和Sn的扩散或混合会形成CuSn金属间化合并且可以帮助产生空隙155。互连150中的电抗会因为所述焊料中的空隙而增加并且导致电迁移问题。其他诸如晶须的非期望的形成也可由于Cu和Sn的混合而形成。晶须会导致在Sn凸起中建立的压缩应力并且会导致管芯封装互连的缺陷。
图1D示出了带有扩散的或混合的Cu和Sn的管芯封装互连的各层的另一个典型图示160。图1D示出了Cu和Sn形成的实例。例如在图示160中，Cu3Sn的区域165和Cu6Sn5的区域170已在Cu层172和178以及Sn层176之间形成。
某些传统的技术企图避免来自不同管芯封装互连层的Cu和Sn的混合和扩散。例如，Pb5Sn凸起的使用就可用于防止晶须的形成。然而对Pb5Sn的使用会导致由如上所述低温下Sn相变所引起的电迁移问题。此外，Pb会产生环境和健康问题。在另一个传统实例中，溅射的Ni可用于防止Cu扩散入Sn。然而，溅射Ni的扩散阻挡物性质很差并且不足以阻止Cu和Sn的扩散或混合。如下在一个或多个典型实现中所述，示出的方法、技术和结构能够防止不同管芯封装互连层之间的Cu和Sn的混合和扩散。
在本发明中的一个或多个典型实现也示出了在所述基极层金属蚀刻期间防止Sn凸起劣化的方法、技术和结构。一般而言，在蚀刻包括Ti、Al或NiV的基极层金属时是能够避免Sn凸起的侵蚀和氧化的。
图2示出了管芯封装互连的一个典型实现。基极层金属230在硅衬底205之上形成并且所述基极层金属230可以包括Cu。基极层金属230也图案化在绝缘体、树脂或介电层235(诸如聚酰亚胺层)之上。基极层金属230可以包括粘附层232和籽晶层234。粘附层232可以在例如衬底205或介电层235之上形成。粘附层232有助于连接或粘附两个不同的表面，诸如有助于基极层金属粘附住底层表面。籽晶层234有助于在粘附层232上建立基极层金属结构。所述籽晶层可以作为底层的平坦表面并且可以促进所述基极层金属的正确生长和形成。粘附层232可包括Ti、TiN和TiSiN并且籽晶层234也可包括Ni、NiV和Co。可以在粘附层232和籽晶层234之间形成诸如Al层233的附加金属层以改善所述基极层金属的一种或多种性质。带有附加金属层的所述基极层金属性质的改善包括抑制所述晶须的形成以及防止热处理期间的分层和劣化以及电磁应力。
扩散阻挡物层225可选择性地设置在基极层金属230之上。选择性的沉积意味着某些表面可以具有仅在该表面部分上沉积的另一层。无电镀的扩散阻挡物可以阻止Cu和Sn扩散通过所述扩散阻挡物。所述扩散阻挡物层225可以是无电镀的并且可以位于某个位置上以阻止来自所述基极层金属230的Cu与来自所述凸起层215或焊料层210的Sn的混合。扩散阻挡物层225可以防止CuSn金属间化合的形成以及晶须的形成。扩散阻挡物层225可以避免凸起的分层并且能够改善生产管芯封装互连的成品率工艺。所述扩散阻挡物层225可以包括但不限于CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP中的任何一种。
当在不规则形状的物体、图形和凹进部分上沉积时，无电镀沉积具有一种或多种优势。在无电镀层中，电子是由化学还原剂提供的。一般来说，无电镀层指的是包含还原剂的溶液中金属离子的还原。所述还原剂可以通过接触反应表面的氧化来提供电子。无电镀沉积可以具有较高的均匀性并且在电镀时基本没有压缩应力。无电镀沉积倾向于在整个底层结构形状上的厚度均匀，因此就提供了更为均匀的电流密度并减少了某些电迁移问题。无电镀阻挡物还具有低成本、选择性和无定形的优点。
扩散阻挡物具有避免或抑制Sn通过扩散阻挡物扩散至Cu的其他材料。例如可以使用具有较慢反应或扩散Cu和Sn的可电镀材料，诸如来自族VIII的金属(例如Co、Ni、Fe、Ru、Rh、Ir和Os)与来自族VI(例如W、Mo和Cr)和非金属(例如B、P和N)的合金。
润湿层(未示出)可位于扩散阻挡物层225之上。润湿层也可选择性地沉积在部分扩散阻挡物层225上。润湿层可以包括CoB、NiB和NiP的任何一种。
把凸起层215放置于润湿层之上并把焊料层210放置在凸起层之上。管芯封装220位于焊料层210之上并与其电气连接。与所述管芯封装220的电气连接允许电流可在管芯封装和器件以及接近或在所述衬底之上的互连之间流动。凸起层215、焊料层210或这两层210和215都可含有Sn。
在本发明一个或多个典型实现中，可以电镀Sn以抑制晶须的形成以及相关的电迁移缺陷。Sn的电镀也可以防止低温下(例如约13.2℃)Sn的相变并且避免涉及βSn的机械和电迁移缺陷。Sn的电镀包括Sn和Sn合金，诸如0.7Cu、Bi、Sb以及3.5Ag。可以在包含锡盐(例如硫酸锡、氯化锡)、酸(例如硫酸、磺酸)和其他添加剂(例如类似聚醚二醇的抑制剂或者晶粒细化剂和抗氧化剂)的溶液中以恒定的电流(例如约为10-100mA/cm2)或电压进行锡的电镀。
图3是图2中示出的制造典型实现的典型流程图。在310处，可在晶片上形成一个或多个器件或Cu互连。随后在312处可使用SiN和聚酰亚胺钝化所述管芯封装互连200。通过使用光刻和蚀刻操作，可以为Cu的金属喷镀打开一个接触焊盘(未示出)。可以使用等离子汽相沉积(PVD)、化学汽相沉积(CVD)、原子层沉积(ALD)或电镀来沉积基极层金属230。所述基极层金属230可以包括粘附层(例如Ti、TiN或TiSiN)和籽晶层(例如Ni、NiV或Co)。可以在粘附层和籽晶层之间形成诸如Al的附加金属层以改善所述基极层金属230的阻挡物性质。
随后可在316处沉积并图案化光刻胶层。可在318处形成扩散阻挡物层225。扩散阻挡物层225可以是无电镀的并且可以包括CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP。随后在320处可以在所述扩散阻挡物层225上沉积润湿层。所述润湿层可以包括CoB、NiB、CoP以及NiP的任何一种。在322处可以执行Sn或Sn合金的电镀。Sn的某些合金可以包括0.7Cu、Bi、Sb和3.5Ag的任何一种。随后就在324处移除光刻胶并且在326处蚀刻所述基极层金属230。
用扩散阻挡物层225形成所述管芯封装互连200需要使用蚀刻来形成基极层金属230的图案。对基极层金属230的蚀刻会减轻Sn凸起和聚酰亚胺的劣化(例如腐蚀或氧化)。
图4示出了管芯封装互连的另一个典型实现400。凸起层415由Cu形成并且直接位于基极层金属430之上。基极层金属430也可以是Cu。扩散阻挡物层425可以是无电镀的并且可放置于(Cu)凸起层415之上和Sn或Sn合金层之下。扩散阻挡物层425可以提供类似于图2中互连200的扩散阻挡物层425的类似优点。例如，扩散阻挡物层425可以阻止(Cu)凸起层415和Sn层435之间通过所述扩散阻挡物层的Cu和Sn扩散或混合。扩散阻挡物层425能够避免在凸起层415中晶须的形成。虽然在图中示出了若干层415、425和435的典型厚度，但是层的厚度可以发生变化。
可以在Sn层435上形成焊料层410并且封装层420可以连接至所述焊料层410。封装层420可以在互连400中与其他所有的导电层410、435、425、415和430相连，从而允许电流在管芯和器件之间以及在衬底附近或之上的互连间流动。
图5示出了制造图4中示出的典型实现的典型流程图。用于互连400的在310、312、314和316处的流程能够以与图2到图3中用于互连200的流程类似的方式和次序出现。在518处，形成并电镀Cu凸起层415。Cu凸起层415的电镀可以提供均匀的厚度，抑制晶须的形成并且具有优于图2中电镀Sn凸起层215的低至零的压缩应力。在520处，扩散阻挡物层425可以是无电镀的并且在凸起层415上形成而在522处，就可在凸起层415上形成润湿层(图4中未示出)。无电镀扩散阻挡物层425包括CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP的任何一种而所述润湿层可包括CoB、NiB、CoP以及NiP的任何一种。
在524处，可以在所述润湿层上形成并电镀Sn层435。电镀Sn层435可以提供与上述在互连200中电镀Sn类似的优点。这些类似的优点包括抑制晶须的形成以及避免低温下Sn的相变。在526处移除光刻胶并且在528处蚀刻所述基极层金属430。可以在Sn层435上形成焊料层410并且封装层420可以连接至焊料层410。焊料层410可以包括Sn并还可被电镀。
图6示出了管芯封装互连的另一个典型实现600。凸起层615由Cu形成并且直接位于基极层金属630之上。基极层金属630可由Cu形成。扩散阻挡物层625可以是无电镀的并且可放置于Cu凸起层415之上和Sn或Sn合金层之下。扩散阻挡物层625可以包围凸起层615，而基极层金属630则接触凸起层615的底面。凸起层615的所有非基极层金属630的表面(包括顶面和侧面)可由无电镀扩散阻挡物层625覆盖。这样，凸起层615的外表面就能够与直接物理接触的包括Sn的层物理绝缘。无电镀扩散阻挡物层625可以提供类似于图4中互连400的扩散阻挡物层的类似优点。例如，扩散阻挡物层625可以阻止Cu凸起层615和Sn层415之间的Cu和Sn扩散或混合，并且防止凸起层615内晶须的形成。
可以在无电镀扩散阻挡物层625上形成焊料层610并且封装层620可以连接至焊料层610。焊料层610可以包括Sn并可被电镀。
图7示出了制造图6中示出的典型实现的典型流程图。用于互连600的在310、312、314、316和518处的流程能够以与图4到图5中用于互连400的流程类似的方式和次序出现。在720处，移除光刻胶并且在722处蚀刻所述基极层金属630。在724处，扩散阻挡物层625可以是无电镀的并且在凸起层615上形成而在726处，可在凸起层615上形成润湿层(图6中未示出)。无电镀扩散阻挡物层625包括CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP的任何一种而所述润湿层可包括CoB、NiB、CoP以及NiP的任何一种。诸如焊料层610的其他导电层可在无电镀扩散阻挡物层625上并且润湿层可以连接至封装层620。
图8示出了电子计算系统中管芯封装结构的一个典型实现。如上参考图3、5和7所述，在衬底上形成用于管芯封装的一个或多个互连和层。当被放置在电路板850上时，管芯封装810可以将管芯封装内部的电路与管芯封装外部且在电路板850上的电路相连接。电路板850可以是其他的芯片或组件，诸如存储器843、中央处理单元(CPU)825以及控制器或其他的逻辑单元833。电路板850可采用多层制成，以便于在组件之间的信号连接，并且可在计算机和/或电子系统860中使用。
已经讨论了本发明的多个实现。然而应该认识到可以做出多种修改而不背离本发明的精神和范围。例如，处理过程可以与图3、5和7中示出的处理次序不同。例如在图7中，在互连600的518处形成并电镀了Cu层之后，才在724处沉积无电镀的扩散阻挡物层625。在726处在无电镀的扩散阻挡物层625上形成润湿层后，才在720处移除光刻胶并在722处蚀刻所述基极层金属630。在另一个实例中，可使用无电镀阻挡物来防止除了Cu和Sn之外的其他金属的混合，诸如防止Au和Al的混合。

Claims (47)

1.一种包括导电凸起的微电子装置，包括：
半导体衬底；
与所述半导体衬底接触的第一导电层，所述第一导电层包括基极层金属，所述基极层金属包括Cu；
与所述第一导电层接触的扩散阻挡物；
在所述扩散阻挡物之上的并包括CoB和NiP之一的润湿层；以及
与所述润湿层接触的凸起层，所述凸起层包括Sn，其中所述扩散阻挡物配置成防止Cu和Sn扩散通过所述扩散阻挡物以及防止装置中的CuSn金属间化合物形成。
2.如权利要求1所述的装置，其特征在于，所述扩散阻挡物包括无电镀扩散阻挡物。
3.如权利要求1所述的装置，其特征在于，还包括
管芯封装；和
位于所述凸起层和管芯封装之间的焊料层，其中所述焊料层包括Sn。
4.如权利要求1所述的装置，其特征在于，
所述基极层金属包括粘附层和籽晶层，其中所述粘附层包括Ti、TiN和TiSiN中的一种并且籽晶层包括Ni、NiV和Co中的一种。
5.如权利要求1所述的装置，其特征在于，所述扩散阻挡物包括CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP中的一种，并且所述凸起层还包括Sn合金，所述Sn合金包括0.7Cu、Bi、Sb和3.5Ag中的一种，其中被电镀的Sn凸起层还适于防止Sn从αSn到βSn的低温相变。
6.如权利要求1所述的装置，其特征在于，所述扩散阻挡物还被配置为减少凸起层的分层。
7.如权利要求1所述的装置，其特征在于，所述装置还包括被溅射的基极层金属，其中所述扩散阻挡物还适于减少与CuSn金属间化合物化合形成相关的电迁移。
8.一种包括导电凸起的微电子装置，包括：
半导体衬底；
与所述半导体衬底接触的第一导电层，所述第一导电层包括基极层金属，所述基极层金属包括Cu；
与所述第一导电层接触的扩散阻挡物；
在所述扩散阻挡物之上的并包括CoB和NiP之一的润湿层；以及
与所述润湿层接触的凸起层，所述凸起层包括Sn，其中所述扩散阻挡物配置成防止Cu和Sn扩散通过所述扩散阻挡物以及防止装置中的CuSn金属间化合物形成，
其中所述基极层金属包括粘附层和籽晶层，其中所述籽晶层包括Co，其中所述基极层金属还包括位于所述粘附层和所述籽晶层之间的金属层，其中所述金属层包括Al。
9.如权利要求8所述的装置，其特征在于，所述扩散阻挡物被配置成抑制凸起层中的晶须的形成。
10.如权利要求8所述的装置，其特征在于，还包括位于所述凸起层与管芯封装之间的焊料层，其中所述焊料层包括Sn。
11.如权利要求8所述的装置，其特征在于，所述扩散阻挡物包括NiWBP，其中所述凸起层还包括Sn合金，所述Sn合金包括0.7Cu、Bi和Sb之一，以及其中所述凸起层还被配置为防止Sn从αSn到βSn的低温相变。
12.如权利要求8所述的装置，其特征在于，所述扩散阻挡物还被配置为减轻凸起层分层。
13.如权利要求8所述的微电子装置，其特征在于，所述扩散阻挡物包括CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP中的一种。
14.一种包括半导体凸起的微电子装置，包括：
在半导体衬底上的基极层金属，所述基极层金属包括Cu；
在所述基极层金属之上的凸起，所述凸起包括Cu；
在所述凸起之上的扩散阻挡物；
在所述扩散阻挡物之上的包括CoB和NiP之一的润湿层；以及
与所述扩散阻挡物相接触的焊料层，所述焊料层包括Sn，所述扩散阻挡物被配置为防止Cu和Sn通过所述扩散阻挡物的扩散和装置中的CuSn金属间化合物形成。
15.如权利要求14所述的装置，其特征在于，所述扩散阻挡物包括无电镀扩散层。
16.如权利要求14所述的装置，其特征在于，所述基极层金属包括粘附层和籽晶层，其中所述粘附层包括Ti、TiN和TiSiN中的一种并且籽晶层包括Ni、NiV和Co中的一种。
17.如权利要求16所述的装置，其特征在于，所述基极层金属还包括位于所述粘附层和所述籽晶层之间的金属层，其中所述金属层包括A1???，其中所述扩散阻挡物适于抑制所述凸起层中晶须的形成。
18.如权利要求14所述的装置，其特征在于，所述扩散阻挡物层包括CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP中的一种。
19.如权利要求16所述的装置，其特征在于，所述扩散阻挡物被配置成抑制凸起中的晶须的形成。
20.如权利要求14所述的装置，其特征在于，所述扩散阻挡物被配置成抑制凸起中的晶须的形成，其中所述基极层金属还包括位于所述粘附层与所述籽晶层之间的金属层，其中所述金属层包括Al。
21.如权利要求14所述的微电子装置，其特征在于，所述扩散阻挡物包括CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP中的一种。
22.一种包括半导体凸起的微电子装置，包括：
在半导体衬底上的基极层金属，所述基极层金属包括Cu；
在所述基极层金属之上的凸起，所述凸起包括Cu；
在所述凸起之上的扩散阻挡物；
在所述扩散阻挡物之上的包括CoB和NiP之一的润湿层；以及
与所述润湿层相接触的焊料层，所述焊料层包括Sn，其中，所述扩散阻挡物被配置为防止Cu和Sn通过所述扩散阻挡物的扩散和装置中的CuSn金属间化合物形成，以及其中所述基极层金属还与所述扩散阻挡物相接触以便于使所述凸起与所述焊料层物理绝缘。
23.如权利要求22所述的装置，其特征在于，所述扩散阻挡物被配置成抑制凸起中的晶须的形成，其中所述基极层金属还包括位于所述粘附层与所述籽晶层之间的金属层，其中所述金属层包括Al。
24.如权利要求22所述的微电子装置，其特征在于，所述扩散阻挡物包括CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP中的一种。
25.一种形成微电子器件的方法，包括：
使用SiN和聚酰亚胺对半导体衬底进行钝化；
沉积基极层金属，所述基极层金属包括Cu；
沉积光刻胶层；
形成扩散阻挡物，所述扩散阻挡物适于防止不同层之间的Cu和Sn混合；
在所述扩散阻挡物之上形成包括CoB和NiP之一的润湿层；
形成与所述润湿层接触的凸起层；
移除所述光刻胶层；以及
蚀刻所述基极层金属。
26.如权利要求25所述的方法，其特征在于，沉积所述基极层金属包括等离子汽相沉积PVD、化学汽相沉积CVD、原子层沉积ALD中的一种，其中所述扩散阻挡物包括无电镀扩散阻挡物。
27.如权利要求26所述的方法，其特征在于，所述基极层金属包括粘附层和籽晶层，其中所述粘附层包括Ti、TiN或TiSiN中的一种而所述籽晶层包括Ni、NiV或Co中的一种，其中所述无电镀扩散阻挡物还适于减轻凸起层分层。
28.如权利要求27所述的方法，其特征在于，沉积所述基极层金属包括在所述粘附层和所述籽晶层之间沉积金属层，所述基极层金属还包括一个或多个电气互连。
29.如权利要求28所述的方法，其特征在于，所述金属层包括A1???，其中所述光刻胶层适于图案化，而且所述无电镀扩散阻挡物还适于减少与CuSn金属间化合物形成相关的电迁移。
30.如权利要求26所述的方法，其特征在于，所述无电镀扩散阻挡物层包括CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP中的一种。
31.如权利要求26所述的方法，其特征在于，所述凸起层包括Sn，所述Sn被电镀以防止Sn从αSn到βSn的低温相变，其中所述被电镀的Sn还适于抑制晶须的形成。
32.如权利要求26所述的方法，其特征在于，所述凸起层还包括Sn合金，所述Sn合金包括0.7Cu、Bi、Sb和3.5Ag中的一种，其中Sn合金被电镀以防止Sn从αSn到βSn的低温相变。
33.如权利要求26所述的方法，其特征在于，还包括：
让焊料层形成所述凸起层，所述焊料层包括Sn；以及
连接管芯封装至所述焊料层。
34.一种形成微电子器件的方法，包括：
使用SiN和聚酰亚胺对半导体衬底进行钝化；
沉积基极层金属，其中所述基极层金属包括粘附层、籽晶层和位于所述粘附层与所述籽晶层之间的包括Al的金属层；
沉积光刻胶层；
形成Cu层，所述Cu层被电镀；
形成无电镀扩散阻挡物，所述无电镀扩散阻挡物位于所述Cu层之上，所述无电镀扩散阻挡物适于防止Cu和Sn通过所述无电镀扩散阻挡物扩散；
在所述无电镀扩散阻挡物之上形成包括CoB和NiP之一的润湿层；
移除所述光刻胶层；以及
蚀刻所述基极层金属。
35.如权利要求34所述的方法，其特征在于，还包括在所述润湿层和所述无电镀扩散阻挡物之上形成焊料区，其中所述焊料区与管芯封装相接触，其中所述焊料区包括Sn。
36.如权利要求34所述的方法，其特征在于，所述焊料区与管芯封装相接触。
37.如权利要求34所述的方法，其特征在于，所述无电镀扩散阻挡物层包括CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP中的一种。
38.一种形成微电子器件的方法，包括：
使用SiN和聚酰亚胺对半导体衬底进行钝化；
沉积基极层金属，所述基极层金属包括Cu；
沉积光刻胶层；
电镀凸起层，所述凸起层包括Cu；
移除所述光刻胶层；
蚀刻所述基极层金属；
形成扩散阻挡物层，所述扩散阻挡物层被设置在所述Cu凸起层之上并与所述基极层金属接触，所述扩散阻挡物层适于防止通过所述不同层之间的Cu和Sn混合；以及
在所述扩散阻挡物层之上形成包括CoB和NiP之一的润湿层。
39.如权利要求38所述的方法，其特征在于，所述扩散阻挡物层包括CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP中的一种，其中所述基极层金属包括粘附层和籽晶层，其中所述粘附层包括Ti、TiN和TiSiN中的一种并且所述籽晶层包括Ni、NiV和Co中的一种。
40.如权利要求38所述的方法，其特征在于，所述凸起层包括外表面，其中所述凸起层的所述外表面不与焊料区物理接触。
41.如权利要求38所述的方法，其特征在于，所述Cu凸起层还适于防止晶须的形成，其中所述扩散阻挡物层还适于减轻与CuSn金属间化合物形成相关的电迁移。
42.如权利要求38所述的方法，其特征在于，形成所述扩散阻挡物包括从CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP中的一种形成所述扩散阻挡物。
43.一种具有电路板的系统，包括：
含有电路的一个或多个组件；以及
用于在所述电路板上各组件之间路由至少一个信号的所述电路板上的一层或多层，其中在所述电路板上的至少一个所述组件包括管芯封装互连，所述管芯封装互连包括：
半导体衬底；
与所述半导体衬底接触的第一导电层，所述第一导电层包括基极层金属，所述基极层金属包括Cu；
与所述第一导电层接触的扩散阻挡物；
在所述扩散阻挡物之上并包括CoB和NiP之一的润湿层；以及
与所述润湿层接触的凸起层，所述凸起层包括Sn，其中所述扩散阻挡物适于防止Cu和Sn扩散通过所述扩散阻挡物以及防止管芯封装互连中的CuSn金属间化合物形成。
44.如权利要求43所述的系统，其特征在于，所述一个或多个组件包括中央处理单元、存储器和逻辑单元中的任何一种。
45.如权利要求43所述的装置，其特征在于，所述扩散阻挡物被配置成抑制凸起中的晶须的形成，其中所述基极层金属还包括位于所述粘附层与所述籽晶层之间的金属层，其中所述金属层包括Al。
46.如权利要求43所述的系统，其特征在于，所述扩散阻挡物包括CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP中的一种。
47.一种包括导电凸起的微电子器件，包括
衬底；
与所述衬底中电路连接的基极层，所述基极层包括：
包括铜的导电互连；
粘附层；
籽晶层；和
位于所述粘附层与所述籽晶层之间的铝层；
无电镀扩散阻挡物，包括CoBP、CoWP、CoWB、CoWBP、NiBP、NiWP、NiWB以及NiWBP中的一种；
在扩散阻挡物之上的并包括CoB和NiP之一的湿润层以及
电镀的凸起层，包括锡，
其中无电镀扩散阻挡物被定位成防止来自所述基极层的铜和来自所述电镀凸起层的锡的混合。
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