CN100492176C - Phase control and compensation process of digital optical lithography - Google Patents
Phase control and compensation process of digital optical lithography Download PDFInfo
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- CN100492176C CN100492176C CNB2007100227551A CN200710022755A CN100492176C CN 100492176 C CN100492176 C CN 100492176C CN B2007100227551 A CNB2007100227551 A CN B2007100227551A CN 200710022755 A CN200710022755 A CN 200710022755A CN 100492176 C CN100492176 C CN 100492176C
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Abstract
A method for controlling and compensating phase of digital-photoetching technique can realize gapless projected-pattern by controlling and compensating light signal phase of adjacent reflectors. Both device and system used for realizing said method are also disclosed.
Description
Technical field:
The present invention relates to technical field of lithography, specifically, relate to, the method for printing composition on the substrates such as printed circuit board (PCB), mask plate, flat-panel monitor, biochip, micromechanics electronic wafer, optical glass flat board at wafer.
Background technology:
Photoetching technique is to be used for the composition that printing has feature on substrate surface.Such substrate can comprise be used for producing the semiconductor devices, the substrate of multiple integrated circuit, flat-panel screens (for example LCD), circuit board, biochip, micromechanics electronic chip, photoelectron circuit chip etc.Often the substrate that uses has the semiconductor wafer or the glass substrate of photaesthesia medium as exterior view.
In photoetching process, wafer is placed on the wafer station, by being in the exposure device in the lithographic equipment, characteristic composition is projected wafer surface.Although in photoetching process, used projecting optical device, also can use different type exposure devices according to concrete application.The different exposure devices of X ray, ion, electronics or photon photoetching for example, this is well known to those skilled in the art.
Tradition substep repetition formula that semicon industry uses or substep scan-type lithography tool, with the characteristic composition of graticule in each disposable projection or scan on the wafer, single exposure or scan a field.Come next field is carried out the exposure process of repeatability then by mobile wafer.Traditional etching system is realized the printing of the accurate characteristic composition of high production volume by repeatability exposure or scanning process.
In order on wafer, to make device, need a plurality of graticules.Owing to the minimizing of characteristic dimension and for the precision tolerance demand than small-feature-size, these graticules cost for production is very high, and is consuming time very long, thereby makes the conventional wafer photolithographic fabrication cost that utilizes graticule more and more higher, very expensive.
No mask (as directly writing or digital etc.) etching system provides many benefits with respect to the method for using traditional graticule aspect photoetching.No mask system usage space pattern generator (SLM) replaces graticule.SLM comprises digital micro-mirror system (DMD) or LCD (LCD), and SLM comprises independently addressable and a control cell array, and each pixel can produce the modulation that comprise phase place, gray scale direction or on off state to the light of transmission, reflection or diffraction.
The graticule with specific image encoding is used in the manufacturing of traditional photolithographic image, produces the certain spatial light intensity and the modulation of phase place, and focused light projects on the light sensor by graticule then.Each graticule is configured to a single image.
In the etching system of no mask, feature pattern is produced by the space micro reflector array, and these small minute surfaces can independently be sought location controlled light beam with different vergence direction reflected illumination separately, to produce the spatial light intensity modulation.By the optical projection element, these space micro mirror arrays project on the substrate of light sensor with certain enlargement ratio M (M＜1 usually), produce the composition of feature.
Mask-free photolithography has many advantages with respect to the conventional lithography mode of using conventional graticule.One of largest benefit of mask-free photolithography system is to use the mask of independently addressable programming to realize the ability of multiple litho pattern.Do not have the mask graticule as known in the art and comprise a space micro reflector array, US6 for example, a kind of microscope and etching system that adopts microlens array of record in 133,986.The information of more reflection mirror array can also be from for example U.S. Pat 5,296,891, and U.S. Pat 5,523 obtains in 193, and these documents are here introduced as reference.
In these systems, because the clearance between the adjacent micro-reflector, the perhaps spacing of the secondary imaging luminous point that produces of microlens array, being difficult to expose once on light sensor produces the feature pattern in continuous seamless crack.In order to produce smooth figure continuously, these direct-write photoetching systems need be done continuous sweep, perhaps the mode of Chong Fuxing overlapping exposure.This has brought some problems, has for example increased the time of scanning or exposure, moves control and the control difficulty that moves continuously requires to strengthen for the small distance of accurate translate stage.
Summary of the invention:
A target of the present invention provides a kind of phase control and compensation method of adopting the digital optical lithography of space micro reflector array, to produce gapless continuous exposure figure, and the continuous sweep of having avoided direct-write photoetching system to do, the perhaps mode of Chong Fuxing overlapping exposure, thereby improved exposure efficiency, the small distance that has reduced accurate translate stage moves control and mobile continuously control difficulty.
Technical scheme of the present invention is as follows:
The phase control of digital optical lithography and compensation method, it is characterized in that it being the light source that provides incident beam by a kind of, through the optical light-collecting system a branch of dip-parallel illumination is mapped on the micro reflector array of space, the space micro reflector array is by computer control, make each micro-reflector on it produce different corresponding tilt, when micro-reflector is in the forward inclination, shine the projection optical system that the light beam on the corresponding micro-reflector is reflected and enters core structure far away; When micro-reflector is in reversal dip, shine the projection optical system that light beam on the corresponding micro-reflector is reflected and departs from core structure far away with wide-angle; By reflected light is carried out phase modulation (PM), make projection optical system produce certain spatial modulation figure, expose on the light sensor substrate being positioned on the mobile platform, there is not gap continuous exposure figure when implementing photoetching; Describedly be meant by reflected light is carried out phase modulation (PM): the incident angle of setting light source is θ, be two times of pitch angle of the micro-reflector on the micro reflector array of space, there are a phase differential ΔΦ, ΔΦ=P sin θ/λ between the reflected light of adjacent micro-reflector; Wherein P is the spatial disposition cycle of micro reflector array along the radiation source direction, and λ is the wavelength of incident beam; By being provided with and/or changing the corresponding incident angle and the optical source wavelength of micro reflector array radiation source direction, make that described phase differential ΔΦ is an integer, between the reflected light of adjacent micro-reflector same-phase, mutual superposition between the reflected light of adjacent micro-reflector.
Described space micro reflector array is by the programmable graphics generator or have the element of independently addressable independent switching or spatial light modulator replaces.
The phase control of digital optical lithography and compensation method, it is characterized in that it being the light source that provides incident beam by a kind of, through the optical light-collecting system directional light of a branch of inclination is shone on the micro reflector array of space, the space micro reflector array is by computer control, make each micro-reflector on it produce different corresponding tilt, when micro-reflector is in the forward inclination, shine first projection optical system that the light beam on the corresponding micro-reflector is reflected and enters core structure far away; When micro-reflector is in reversal dip, shine first projection optical system that light beam on the corresponding micro-reflector is reflected and departs from core structure far away with wide-angle; After carrying out phase compensation from the light of the first projection optical system outgoing through the space phase modulator, pass through second projection optical system of core structure far away again, produce certain spatial modulation figure, expose on the light sensor substrate being positioned on the mobile platform, do not have gap continuous exposure figure when implementing photoetching; Each pixel on the micro reflector array and each pixel on the space phase modulator form man-to-man corresponding relation.
Described optical light-collecting system is convex lens, perhaps can produce the one or more reflections of directional light and/or the optical device of refraction.
Described space reflection micro mirror array, it has addressable independent translation control module, forms spatial light modulator;
Optical projection system projects image array on the light sensor substrate.
When micro reflector array, space phase modulator use product not of the same race, the relation of its pixel correspondence still is a man-to-man imaging relation, and each pixel on the micro reflector array is by first projection optical system all on the position of imaging corresponding pixel to the space phase modulator.The pixel size corresponding relation of micro reflector array, space phase modulator is mated by the enlargement ratio of first projection optical system.
The irradiates light that radiation source will collimate basically sends on the micro reflector array that forms spatial light modulator.Micro reflector array is the digital mirror device (for example DMD of Texas instrument) of the independent addressing of a control able to programme, above each micro-reflector two kinds of duties are arranged, forward and reverse respectively tilt 12 the degree or 10 the degree (model that depends on the DMD device).When micro-reflector forward inclination 12 was spent, the light that shines this micro-reflector was reflected and enters optical projection system, projected to the corresponding image space in light sensor surface and exposed.Because the incident angle θ of radiation source (24 degree) requires to become with the pitch angle (12 degree) of micro-reflector the relation of twice, will have a phase differential ΔΦ between the reflected light of adjacent micro-reflector, ΔΦ=Psin θ/λ; Wherein P is the spatial disposition cycle of micro reflector array along the radiation source direction, and θ is the incident angle of radiation source, and λ is the wavelength of incident light source.Has the different spatial disposition cycles with respect to different micro reflector arrays along the radiation source direction, by being provided with and/or changing corresponding incident angle and optical source wavelength, make that the phase relation between the reflected light of adjacent micro-reflector can Be Controlled and change.When the phase differential ΔΦ between the reflected light of adjacent micro-reflector is integer, be same-phase between the reflected light of adjacent micro-reflector, can mutual superposition, the i.e. no gap of realization continuous exposure figure between the reflected light of adjacent micro-reflector.
When the phase differential ΔΦ between the reflected light of adjacent micro-reflector is not integer, be different phase between the reflected light of adjacent micro-reflector, will cancel out each other between the reflected light of adjacent micro-reflector, produce discontinuous exposure figure.In this case, can adopt following method to reach goal of the invention:
Spatial modulation light on the micro reflector array is at first projected on the space phase modulator between first, second optical projection system.Each pixel on the micro reflector array and each pixel on the space phase modulator form man-to-man corresponding relation.The space phase modulator is the cell array that space phase distributes, and it can be a fixing conventional graduation version, each pixel is produced a designed stationary phase change.The space phase modulator can also be a digital phase-modulator, the space reflection mechanical devices that declines for example, and perhaps liquid crystal phase-modulator, more space phase-modulator information can also be from for example obtaining patent 99803477.0 documents such as grade.On the spatial modulation light on the micro reflector array is at first projected to space phase modulator between first, second optical projection system, to there be original intrinsic on a micro reflector array phase differential ΔΦ between the reflected light of adjacent micro-reflector, corresponding neighboring pixels can be designed or digital is modulated to a negative phase difference-ΔΦ on the space phase modulator, make to see through figure on the space phase modulator by phase compensation, the transmitted light phase differential on the neighboring pixels is zero.And then projected on the described light sensor by second optical projection system, realize no gap continuous exposure figure.
Description of drawings:
Fig. 1: shown in have the digital optical lithography schematic representation of apparatus of space micro reflector array.
Fig. 2: shown in have the lithography apparatus with space phase modulator of second optical projection system synoptic diagram.
Fig. 3: Fig. 3 (a) illustrates a schematic 1x8 micro reflector array;
The no gap continuous exposure figure of Fig. 3 (b) on the optical sensing element substrate, forming;
The discontinuous exposure figure of Fig. 3 (c) on the optical sensing element substrate, forming.
Embodiment:
Embodiment 1:
Fig. 1 shows a kind of digital photolithography device with space micro reflector array.This device comprises:
● a light source 1 that is used to provide illumination beam, be preferably the radiation source of light emitting diode,
● an optical light-collecting system 2 that is used to provide illumination beam, shown in the figure is a slice optical device, one skilled in the art should appreciate that to also using the optical device combination of multi-disc.Same understanding is applicable to the optical device shown in all pictures.
● a programmable pattern generator 3, be preferably the space micro reflector array, he has the element of independently addressable independent switching.
● a projection optical system 4,5 that adopts core structure far away, shown in the figure is a slice optical device, one skilled in the art should appreciate that to also using the optical device combination of multi-disc.
● a precise mobile platform 7, in order to carrying light sensor 6.
The illumination beam that light source 1 produces through the optically focused of optical light-collecting system 2, projects on the space micro reflector array 3 after evenly.Light source 1 and optical light-collecting system 2 can comprise the condenser that is used to collect the irradiates light plinth, also comprise the adjusting gear that is used to be provided with beam intensity, integrator for example, compound eye.In this way, the light beam that incides on the micro reflector array of space has needed homogeneity, intensity distributions and angular distribution.
Fig. 1 schematically illustrates illumination beam and shines directly on the micro reflector array of space with the incident angle of setting, but one skilled in the art should appreciate that, illumination beam also can be deflected by one or more reflections and/or diffractive optical devices, and then project on the space micro reflector array 3, for example use total reflection prism (TIR), to change the geometry of light path, save the space of geometric distributions, satisfy the light beam that incides on the micro reflector array of space simultaneously and have needed homogeneity, intensity distributions and angular distribution.
Space micro reflector array 3 makes each micro-reflector produce different corresponding tilt by computer control.When micro-reflector is in forward and tilts, shine light beam on the corresponding micro-reflector and be reflected and enter projection optical system; When micro-reflector is in reversal dip, shines light beam on the corresponding micro-reflector and be reflected and depart from projection optical system with wide-angle.By reflected light is modulated, make projection optical system produce certain spatial modulation figure.
The spatial modulation figure projects the light sensor surface through projection optical system with certain enlargement ratio M.M can be taked but those skilled in the art also understands enlargement ratio M in enlargement ratio M＜1 shown in Figure 1 in different application〉1 selection.In order to produce continuous no gap figure on light sensor 6 surfaces, the light sensor surface projection resolution that projection optical system produces has suitable size in the pixel projecting figure of space micro reflector array, thus the influence in the gap between the pixel of fuzzy space micro reflector array.
Because the incident angle θ of radiation source requires to become with the pitch angle of micro-reflector the relation of twice, will have a phase differential ΔΦ between the reflected light of adjacent micro-reflector, ΔΦ=P sin θ/λ; Wherein P is the spatial disposition cycle of micro reflector array along the radiation source direction, and θ is the incident angle of radiation source, and λ is the wavelength of incident light source.
Have the different spatial disposition cycles along the radiation source direction with respect to different micro reflector arrays, by being provided with and/or changing corresponding incident angle and optical source wavelength, the phase relation between the reflected light of adjacent micro-reflector can Be Controlled and change.When the phase differential ΔΦ between the reflected light of adjacent micro-reflector is integer, be same-phase between the reflected light of adjacent micro-reflector, mutual superposition between the reflected light of adjacent micro-reflector is to realize no gap continuous exposure figure, shown in accompanying drawing 3-3 (b).For example use the light emitting diode of 395 nanometers, corresponding to a routine micro reflector array (DMD) of Texas instrument, the incident angle θ of radiation source=24 degree is along the spatial disposition cycle P=9 of radiation source direction.67 microns, the phase differential ΔΦ is an integer, is same-phase between the reflected light of adjacent micro-reflector, and mutual superposition between the reflected light of adjacent micro-reflector produces continuous exposure figure.
Accompanying drawing 3 (a) illustrates a schematic 1x8 micro reflector array, respectively with 0/1 heeling condition of having represented micro-reflector.The reversal dip state of 0 expression micro-reflector shines light beam on the corresponding micro-reflector and is reflected and departs from projection optical system with wide-angle, and the pixel projected position that projects to the light sensor surface does not have exposure energy.The forward heeling condition of 1 expression micro-reflector shines light beam on the corresponding micro-reflector and is reflected and enters projection optical system, and the pixel projected position that projects to the light sensor surface produces exposure energy.
When the phase differential ΔΦ between the reflected light of adjacent micro-reflector is integer, be same-phase between the reflected light of adjacent micro-reflector, mutual superposition between the reflected light of adjacent micro-reflector is to realize no gap continuous exposure figure, shown in accompanying drawing 3 (b).
When the phase differential ΔΦ between the reflected light of adjacent micro-reflector is not integer, be different phase between the reflected light of adjacent micro-reflector, cancel out each other between the reflected light of adjacent micro-reflector, produce discontinuous exposure figure, shown in accompanying drawing 3 (c).For example at the micro reflector array (DMD) of last example, the incident angle θ of radiation source=24 degree is along the spatial disposition cycle P=9 of radiation source direction.67 microns, if the wavelength of radiation source is adjusted into 405 nanometers, corresponding phase differential ΔΦ is not an integer, is different phase between the reflected light of adjacent micro-reflector, cancels out each other between the reflected light of adjacent micro-reflector, produces discontinuous exposure figure.
Embodiment 2:
Fig. 2 shows the digital photolithography device that has the space phase modulator with second optical projection system of the present invention.This device comprises:
● a light source 1 that is used to provide illumination beam, be preferably the radiation source of light emitting diode,
● an optical light-collecting system 2 that is used to provide illumination beam, shown in the figure is a slice optical device, one skilled in the art should appreciate that to also using the optical device combination of multi-disc.Same understanding is applicable to the optical device shown in all pictures.
● a programmable pattern generator 3, be preferably the space micro reflector array, it has the element of independently addressable independent switching.
● second space phase modulator 10, it can be a fixing conventional phase place graduation version, also can be a digital phase-modulator, for example the space reflection mechanical devices that declines, perhaps the liquid crystal phase-modulator of reflection or transmission-type.
● a projection optical system 4,5 that adopts core structure far away, shown in the figure is a slice optical device, one skilled in the art should appreciate that to also using the optical device combination of multi-disc.
● second optical projection system 8,9 that adopts core structure far away, shown in the figure is a slice optical device, one skilled in the art should appreciate that to also using the optical device combination of multi-disc.
● a precise mobile platform 7, in order to carrying light sensor 6.
The illumination beam that light source 1 produces through the optically focused of optical light-collecting system 2, projects on the pattern generator 3 after evenly.Optical light-collecting system 2 and light source 1 can comprise the condenser that is used to collect the irradiates light plinth, also comprise the adjusting gear that is used to be provided with beam intensity, integrator for example, compound eye.In this way, the light beam that incides on the pattern generator has needed homogeneity, intensity distributions and angular distribution.
One skilled in the art should appreciate that, illumination beam also can be deflected by one or more reflections and/or diffractive optical devices, and then project on the pattern generator 3, for example use total reflection prism (TIR), to change the geometry of light path, save the space of geometric distributions, satisfy the light beam that incides on the pattern generator simultaneously and have needed homogeneity, intensity distributions and angular distribution.
Programmable pattern generator 3 (space micro reflector array) makes each micro-reflector produce different corresponding tilt by computer control.When micro-reflector is in forward and tilts, shine light beam on the corresponding micro-reflector and be reflected and enter projection optical system; When micro-reflector is in reversal dip, shines light beam on the corresponding micro-reflector and be reflected and depart from projection optical system with wide-angle.By reflected light is modulated, make projection optical system produce certain spatial modulation figure.Programmable pattern generator 3 also can use the spatial light modulator with said function, for example LCD (LCD).
The spatial modulation figure projects on second space phase modulator with certain enlargement ratio through second projection optical system 8,9.Each pixel on each pixel on the micro reflector array and second the space phase modulator forms man-to-man corresponding relation.The figure to pattern generator 3 generations of second space phase modulator carries out being projected on the described light sensor with certain enlargement ratio M by optical projection system 4,5 after the phase compensation again, realizes no gap continuous exposure figure.M can be taked but those skilled in the art also understands enlargement ratio M in enlargement ratio M＜1 shown in Figure 2 in different application〉1 selection.
Claims (4)
1, the phase control of digital optical lithography and compensation method, it is characterized in that it being the light source that provides incident beam by a kind of, through the optical light-collecting system a branch of dip-parallel illumination is mapped on the micro reflector array of space, the space micro reflector array is by computer control, make each micro-reflector on it produce different corresponding tilt, when micro-reflector is in the forward inclination, shine the projection optical system that the light beam on the corresponding micro-reflector is reflected and enters core structure far away; When micro-reflector is in reversal dip, shine the projection optical system that light beam on the corresponding micro-reflector is reflected and departs from core structure far away with wide-angle; By reflected light is carried out phase modulation (PM), make projection optical system produce certain spatial modulation figure, expose on the light sensor substrate being positioned on the mobile platform, there is not gap continuous exposure figure when implementing photoetching; Describedly be meant by reflected light is carried out phase modulation (PM): the incident angle of setting light source is θ, be two times of pitch angle of the micro-reflector on the micro reflector array of space, there are a phase differential ΔΦ, ΔΦ=P sin θ/λ between the reflected light of adjacent micro-reflector; Wherein P is the spatial disposition cycle of micro reflector array along the radiation source direction, and λ is the wavelength of incident beam; By being provided with and/or changing the corresponding incident angle and the optical source wavelength of micro reflector array radiation source direction, make that described phase differential ΔΦ is an integer, between the reflected light of adjacent micro-reflector same-phase, mutual superposition between the reflected light of adjacent micro-reflector.
2, the phase control of digital optical lithography according to claim 1 and compensation method is characterized in that described space micro reflector array is by the programmable graphics generator or have the element of independently addressable independent switching or spatial light modulator replaces.
3, the phase control of digital optical lithography and compensation method, it is characterized in that it being the light source that provides incident beam by a kind of, through the optical light-collecting system directional light of a branch of inclination is shone on the micro reflector array of space, the space micro reflector array is by computer control, make each micro-reflector on it produce different corresponding tilt, when micro-reflector is in the forward inclination, shine first projection optical system that the light beam on the corresponding micro-reflector is reflected and enters core structure far away; When micro-reflector is in reversal dip, shine first projection optical system that light beam on the corresponding micro-reflector is reflected and departs from core structure far away with wide-angle; After carrying out phase compensation from the light of the first projection optical system outgoing through the space phase modulator, pass through second projection optical system of core structure far away again, produce certain spatial modulation figure, expose on the light sensor substrate being positioned on the mobile platform, do not have gap continuous exposure figure when implementing photoetching; Each pixel on the micro reflector array and each pixel on the space phase modulator form man-to-man corresponding relation.
4, the phase control of digital optical lithography according to claim 3 and compensation method is characterized in that described optical light-collecting system is convex lens, perhaps can produce the one or more reflections of directional light and/or the optical device of refraction.
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| CN102890430B (en) * | 2012-09-18 | 2015-09-09 | 天津芯硕精密机械有限公司 | A kind of device and method directly writing exposure machine adjustment plane of exposure Power uniformity |
| CN104007620B (en) * | 2014-02-18 | 2016-04-06 | 苏州微影光电科技有限公司 | A kind of novel high speed digital scanning direct-write light scribing device |
| CN106772978A (en) * | 2016-12-30 | 2017-05-31 | 宁波永新光学股份有限公司 | A kind of illuminated light microscope of LED reflection |
| JP6979513B2 (en) * | 2017-09-11 | 2021-12-15 | エーエスエムエル ネザーランズ ビー．ブイ． | Lithography equipment and methods |
| JP7260959B2 (en) * | 2018-03-16 | 2023-04-19 | キヤノン株式会社 | Lithographic apparatus, illumination apparatus and method of manufacturing an article |
| CN109270806A (en) * | 2018-11-16 | 2019-01-25 | 深圳珑璟光电技术有限公司 | A kind of free structure luminous point battle array generation device, method and system |
| CN112842604B (en) * | 2019-11-27 | 2022-12-06 | 香港理工大学深圳研究院 | Optogenetics experiment method and system |
| CN111157541B (en) * | 2020-01-14 | 2023-03-14 | 合肥维信诺科技有限公司 | Optical detection system and optical detection method |
| CN112596347B (en) * | 2020-12-16 | 2024-03-15 | 暨南大学 | Multiple exposure method for digital mask projection lithography |
| CN112596348A (en) * | 2020-12-16 | 2021-04-02 | 暨南大学 | System and method for improving projection lithography resolution based on phase modulation |
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