CN100477300C - Method for forming photoelectric element - Google Patents
Method for forming photoelectric element Download PDFInfo
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- CN100477300C CN100477300C CNB200310102627XA CN200310102627A CN100477300C CN 100477300 C CN100477300 C CN 100477300C CN B200310102627X A CNB200310102627X A CN B200310102627XA CN 200310102627 A CN200310102627 A CN 200310102627A CN 100477300 C CN100477300 C CN 100477300C
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Abstract
The invention relate to a method for preparing photocell under low temperature procedure. Conduction element is formed on photoelectricity layer under a condition of low temperature through a low temperature procedure. Thus, common binders can be utilized to stick substrate and photoelectricity layer in order to maintain even raise luminous efficiency.
Description
Technical field
The present invention relates to a kind of method that forms photoelectric cell, particularly a kind of mode of using low temperature process and solid phase to grow up again forms the method for photoelectric cell.
Background technology
In recent years, the use of photoelectric cell (opto-electronic device) is more and more general, for example light-emitting diode (Light-Emitting Diode; LED), solar cell (solar cells) and optical sensor (light sensor) ... Deng.With the light-emitting diode is example, and its electrode is at compound semiconductor materials (compound semiconductor), for example forms on GaAs (GaAs) or gallium nitride (GaN) or the indium phosphide materials such as (InP).Therefore, in order to obtain good Ohmic contact (ohmic contact) at metal and compound semiconductor interface, in the process of making, light-emitting diode need for example use short annealing processing procedure (Rapid Thermal Annealing Process in some Lingao, step the inside in 400 ℃ high-temperature process; RTP).Yet the material of compound semiconductor or form the material of luminous active layers all is vulnerable to the influence of high temperature and changes, thereby may cause the reduction of product quality and luminous efficiency.
Moreover, nontransparent ground in the compound semiconductor materials, GaAs for example itself can extinction, also causes the reduction of luminous efficiency.So replace nontransparent ground with transparent ground, just can improve the luminous efficiency of light-emitting diode.Yet, if the processing procedure of ohmic contact can't be avoided high temperature (〉=400 ℃ approximately), and though be in conjunction with transparent ground or nontransparent ground with ray structure the time, its mode or material all will be restricted to the mode and the material that need be compatible with under the hot environment.
Therefore, how overcoming the step of high-temperature process in the processing procedure, to increase nontransparent ground and the selectivity of transparent ground when combining with ray structure, improve the yield of photoelectric cell simultaneously, is the important topic of the various photoelectric cells of development.
Summary of the invention
A purpose of the present invention is for providing a kind of method with low temperature process formation photoelectric cell, and it is that the mode of utilizing low temperature process and solid phase to grow up again forms photoelectric cell, to increase the variation that various element materials are selected in the photoelectric cell.
Another object of the present invention is for providing a kind of method with low temperature process formation photoelectric cell, and it is that the mode of utilizing low temperature process and solid phase to grow up again forms the photoelectric cell with transparent ground, and then promotes the service efficiency of photoelectric cell.
A further object of the present invention is for providing a kind of method that forms the photoelectric cell with transparent ground in low temperature environment.Above-mentioned method can be avoided in processing procedure, makes knitting layer or active layers between transparent ground and photonic layer avoid being subjected to accidentally temperatures involved, and produces different material difference defectives and then influence the shortcoming of luminescent quality, to improve the quality of photoelectric cell.
For reaching above-mentioned purpose, the invention provides a kind of method that forms photoelectric cell, it comprises: a photonic layer and a temporary transient ground are provided, this photonic layer is formed on this temporary transient ground, wherein this temporary transient ground is a transparent ground, this temporary transient ground comprises and is selected from one of following material or its composition: epoxy resin, acryl resin, acrylonitrile butylene styrene copolymerisation resin or polymethyl methacrylate, this temporary transient ground more comprise and are selected from one of following material or its composition: the polysulfones thing, the polyether sulfone thing, Polyetherimide, polyimides, polyamidoimide, polymethyl benzene sulfide or carbon silicon heat curing-type compound; This photonic layer comprises one first semiconductor layer, an active layers and one second semiconductor layer; Form a knitting layer and a substrate layer on this photonic layer; Remove this temporary transient ground; Utilize an etch process, remove partly this first semiconductor layer, this active layers of part and this second semiconductor layer of part; Form at least one conducting element on this first semiconductor layer and this second semiconductor layer; And form an ohmic contact, wherein this ohmic contact is to handle this conducting element down by the environment that is lower than 250 ℃ in temperature to form.
According to above-described purpose, the invention provides a kind of method that in low temperature, forms photoelectric cell.On a ground, form photonic layer, and, on photonic layer, form conducting element, to finish the processing procedure of photoelectric cell in the mode that low temperature process and solid phase are grown up again.
Description of drawings
Figure 1A to Fig. 1 E is for making the generalized section of a photoelectric cell.
Symbol description among the figure
210 temporary transient grounds
220 first semiconductor layers
230 active layers
240 second semiconductor layers
250 knitting layers
260 transparent grounds
270 electrodes
280 electrodes
Embodiment
Embodiments of the invention are described in detail as follows.Yet except describing in detail, the present invention can also be widely implements at other embodiment, and scope of the present invention do not limit by listed embodiment, should be as the criterion with the scope of claims.
Moreover the different piece of each element is conveniently recognized in this manual, so do not draw according to its actual size.Some yardstick and other scale dependent are the most clearly described and understanding of the present invention for providing, and the modification of appropriateness is arranged.
The invention provides a kind of method that in low temperature, forms photoelectric cell.When forming photoelectric cell, the mode of utilizing low temperature process and solid phase to grow up again forms the conducting element in the photoelectric cell; Because need not in high temperature, to make conducting element, so can increase the applicability that various elements are selected.For instance, the selection aspect ground, no matter be transparent ground or nontransparent ground, neither need only limit to select to be the material that is subjected to high temperature; Or as conducting element, no matter be transparent conducting element or nontransparent conducting element, also can increase the selectivity of its material because of low temperature process of the present invention, and make its reason high temperature and destroy the structure of this body structure of element or other element not when forming, and then improve quality, application and the service efficiency of photoelectric cell.
Figure 1A to Fig. 1 E makes the generalized section of a photoelectric cell for the present invention.Ground of the present invention is not limited to nontransparent ground, as GaAs (GaAs), or transparent ground, in this embodiment, describe with transparent ground.With reference to Figure 1A, on temporary transient ground 210, form a photonic layer, the photonic layer in this preferred embodiment is made up of first semiconductor layer 220, active layers 230 and second semiconductor layer 240.Secondly, shown in Figure 1B, form knitting layer 250 and ground 260 in regular turn on second semiconductor layer 240, wherein knitting layer 250 is in order to sticking together second semiconductor layer 240 and ground 260, and ground 260 is a transparent ground.
Then, at first by rights, for example wear down processing procedure (lapping) or etch process (etching), or carry out earlier carrying out etch process again behind the wear down processing procedure, also can form etching stopping layer (etch stop layer) therebetween, temporary transient ground 210 is removed, upset is shown in Fig. 1 C.
Afterwards, cover its photonic layer (not shown) to define its ray structure with a photoresist layer earlier.Then, utilize etch process, a dry ecthing procedure (dry etching process) for example, or other kind etch process, as wet etch process (wet etching process), remove first semiconductor layer 220 of part, the active layers 230 of part and second semiconductor layer 240 of part, its structure is formed shown in Fig. 1 D.
Afterwards,,, on first semiconductor layer 220 and second semiconductor layer 240, form conducting element respectively, as electrode 270 and electrode 280 with electronics evaporation processing procedure, sputter process, hot evaporation processing procedure or alternate manner with reference to Fig. 1 E.Thereafter, by low temperature process, growing up with solid phase respectively, (Solid Phase Regrowth, SPR) mode makes between the electrode 270 and first semiconductor layer 220 processing procedure, and forms ohmic contact between the electrode 280 and second semiconductor layer 240 again.
And when forming conducting element, can use multiple order to form electrode 270 and electrode 280, make electrode 270 and electrode 280 produce ohmic contact with first semiconductor layer 220 and second semiconductive layer 240 respectively.First kind of order is shown in Fig. 1 C to Fig. 1 E, electrode 270 and electrode 280 be formed at respectively on first semiconductor layer 220 with second semiconductor layer 240 on after, just together carry out the SPR processing procedure, make between the electrode 270 and first semiconductor layer 220, and form ohmic contact between the electrode 280 and second semiconductor layer 240.Or the second kind of order that marks with figure not, after the structure of photoelectric cell formation as Fig. 1 C, promptly on first semiconductor layer 220, form electrode 270, and after treating first semiconductor layer 220, active layers 230 and the structure of second semiconductor layer, 240 formation shown in Fig. 1 D, again after forming electrode 280 on second semiconductor layer 240, to become the structure shown in Fig. 1 E; Afterwards, form the ohmic contact of 240 of electrode 270 and 220 of first semiconductor layers and electrode 280 and second semiconductor layers again with the low temperature process of SPR mode.Even, if necessary, also can be as second kind of order, earlier when photoelectric cell becomes as the structure in Fig. 1 C processing procedure, just earlier on first semiconductor layer 220, form electrode 270, then promptly form the ohmic contact of 220 of electrode 270 and first semiconductor layers with the SPR processing procedure of low temperature; Then, the structure that first semiconductor layer 220, active layers 230 and second semiconductor layer 240 are formed as Fig. 1 D, treat that electrode 280 is formed on second semiconductor layer 240 and after shown in Fig. 1 E, carry out low temperature SPR processing procedure again one time, to finish the ohmic contact of 240 of the electrode 280 and second semiconductor layers.Or the needs in order to design on other element, also can produce the different formation order of other kind.
Controlled being formed on below 250 ℃ of process temperatures of electrode 270 and electrode 280, or below 200 ℃, be higher than 150 ℃, even define and be higher than 100 ℃, be lower than 175 ℃; The light-emitting diode that makes in the present embodiment to be given an example, and other uses method of the present invention and the photoelectric cell that forms is finished its processing procedure under all can be after comparing with the prior art lower temperature.Because when temperature is lower than 250 ℃, or during lower temperature, this temperature can't impact the active layers in the photonic layer 230, also can guarantee that active layers 230 can keep good quality.
Form in the structure at the photonic layer that with the light-emitting diode is the present embodiment of example, active layers 230 can be formed by a quantum well (quantum well) or other structure.First semiconductor layer 220 near temporary transient ground 210 can be the n-type semiconductor layer, and second semiconductive layer 240 then is the p-type semiconductor layer; Or complying with design makes it opposite, and makes first semiconductor layer 220 be the p-type semiconductor layer, and 240 of second semiconductive layers are the n-type semiconductor layer.Certainly, the structure of photonic layer also can be in response to the needs of application element thereof design, and make change.
The material of conducting element-electrode 270 and electrode 280, can form by the material of various different components, these compositions can be Ni, Pd, Ge, Si, Se, Zn, Be, Mg, Cd, Au, Ag, Pt, and the combination in any in Au, Ag and three kinds of compositions of Pt, as AuAg, AgPt, AuPt and AuAgPt, and the order of its combination is also unrestricted, that is its composition can be AgAu, PtAg, PtAu, AuPtAg, AgPtAu, AgAuPt, PtAuAg or PtAgAu in proper order.Wherein, if represent Ni, Pd with A; Represent Ge, Si, Se with B; Represent Zn, Be, Mg, Cd with C; Represent Au, Ag, Pt, AuAg, AgPt, AuPt and AuAgPt with D, then the composition of electrode 270 and electrode 280 can be respectively ABD and ACD (A, B and D, and the composition of A, C and D is in proper order also interchangeable), or other similar alloy.When first semiconductor layer 220 was the n type semiconductor layer, the material that can fixedly select electrode 270 for use was the material of ABD; When second semiconductor layer 240 was the p type semiconductor layer, the material that can fixedly select electrode 280 for use was the material of ACD; But also can be needs and change the material of selecting for use.Certainly, if the design of specific photoelectric cell, electrode 270 ought not be subject to above-mentioned material with the material of electrode 280.And the formation method of electrode 270 and electrode 280, can select hot vapour deposition method (thermal evaporationprocess), electron beam evaporation plating method (electron beam evaporation process) or other method for use, make it to be formed at respectively on first semiconductor layer 220 and second semiconductor layer 240.
The material that among this embodiment is transparent ground 260 can be glass, quartz, acryl resin (PMMA), the styrene copolymerized compound of acrylonitrile butylene (acrylonitrile butadienestyrene copolymer) resin (ABS resin), polymethyl methacrylate (polymethylmethacrylate), sapphire (sapphire).The another kind of selection is thermoplastic polymer, as polysulfones thing (polysulfones), polyether sulfone thing (polyethersulfones), Polyetherimide (polyetherimides), polyimides (polyimides), polyamidoimide (polyamide-imide), polymethyl benzene sulfide (polyphenylene sulfide), or carbon silicon heat curing-type compound (silicon-carbon thermosets).In this preferred embodiment, the material of ground 260 is a glass.
Moreover, because the part material of the knitting layer 250 of act as listed above is after cooling, also can become the solidfied material of transparence, so if necessary, even can omit the step of sticking or forming ground 260, directly be formed on second semiconductor layer 240, treat to replace ground 260 after it becomes solidfied material with knitting layer 250, and the as above processing procedure of Fig. 1 C figure to Fig. 1 E that continues.Because of utilizing low temperature process, the present invention makes photoelectric cell again, so can select the lower transparent ground of fusing point for use, or with the lower general adhesive agent of fusing point as knitting layer, to engage photonic layer and transparent ground, and the variation that increase ground and knitting layer material are selected also makes the mode of joint more simple simultaneously.
Even above-described embodiment content, be based on light-emitting diode, but photoelectric cell of the present invention is except can also can be the application that solar cell (solar cells), optical sensor (light sensor) or other kind have conducting element for the light-emitting diode.
That is, the present invention forms the method for photoelectric cell, is to form photonic layer earlier on a ground, afterwards the mode of growing up again with low temperature process and solid phase, on photonic layer, form conducting element, then can fusing point lower element (as with acryl as ground) finish the processing procedure of photoelectric cell.And, can increase the diversity that material is selected when making photoelectric cell or other and needing the device of conducting element, and further simplify as the step when engaging transparent ground and semiconductor layer by the disclosed technology contents of the present invention.And if when using transparent material as ground, again can be because of the application of transparent ground, and further strengthen the running effect and the luminous efficiency of photoelectric cell.
The above is preferred embodiment of the present invention only, is not in order to limit protection scope of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the scope of claims.
Claims (6)
1. a method that forms photoelectric cell is characterized in that, comprises:
One photonic layer and a temporary transient ground are provided, this photonic layer is formed on this temporary transient ground, wherein this temporary transient ground is a transparent ground, this temporary transient ground comprises and is selected from one of following material or its composition: epoxy resin, acryl resin, acrylonitrile butylene styrene copolymerisation resin or polymethyl methacrylate, this temporary transient ground more comprise and are selected from one of following material or its composition: polysulfones thing, polyether sulfone thing, Polyetherimide, polyimides, polyamidoimide, polymethyl benzene sulfide or carbon silicon heat curing-type compound; This photonic layer comprises one first semiconductor layer, an active layers and one second semiconductor layer;
Form a knitting layer and a substrate layer on this photonic layer;
Remove this temporary transient ground;
Utilize an etch process, remove partly this first semiconductor layer, this active layers of part and this second semiconductor layer of part;
Form at least one conducting element on this first semiconductor layer and this second semiconductor layer; And
Form an ohmic contact, wherein this ohmic contact is to handle down this conducting element by the environment that is lower than 250 ℃ in temperature to form.
2. form the method for photoelectric cell according to claim 1, wherein, the step of above-mentioned this ohmic contact of formation is to carry out in being lower than under 200 ℃ the temperature.
3. form the method for photoelectric cell according to claim 1, wherein, the step of above-mentioned this ohmic contact of formation is to be formed in 100 ℃ to 175 ℃ the environment.
4. form the method for photoelectric cell according to claim 1, wherein, above-mentioned ohmic contact is to handle this conducting element and this photonic layer is formed in the mode that solid phase is grown up again.
5. form the method for photoelectric cell according to claim 1, wherein, the step of above-mentioned this conducting element of formation is selected from one of following various materials or it makes up to form this conducting element:
Ni, Pd, Zn, Be, Mg, Cd, Ge, Si, Se, Au, Ag, Pt, AuAg, AgPt, AuPt and AuAgPt.
6. form the method for photoelectric cell according to claim 1, wherein, when this ground is selected from one of following material or its composition for comprising: when epoxy resin, acryl resin, acrylonitrile butylene styrene copolymerisation resin or polymethyl methacrylate, the above-mentioned step that this ground is provided comprises with a knitting layer sticks together this transparent ground and this photonic layer, and is selected from one of following material or its and forms to form this knitting layer: epoxy resin, acrylonitrile butylene styrene copolymerisation resin or polymethyl methacrylate.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB200310102627XA CN100477300C (en) | 2003-10-27 | 2003-10-27 | Method for forming photoelectric element |
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| CNB200310102627XA CN100477300C (en) | 2003-10-27 | 2003-10-27 | Method for forming photoelectric element |
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| CN1612363A CN1612363A (en) | 2005-05-04 |
| CN100477300C true CN100477300C (en) | 2009-04-08 |
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| CNB200310102627XA Expired - Fee Related CN100477300C (en) | 2003-10-27 | 2003-10-27 | Method for forming photoelectric element |
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