CN100474084C - Liquid crystal display device - Google Patents
Liquid crystal display device Download PDFInfo
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- CN100474084C CN100474084C CNB2004100712144A CN200410071214A CN100474084C CN 100474084 C CN100474084 C CN 100474084C CN B2004100712144 A CNB2004100712144 A CN B2004100712144A CN 200410071214 A CN200410071214 A CN 200410071214A CN 100474084 C CN100474084 C CN 100474084C
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Abstract
Provided is a liquid crystal display device which is made in system-on-panel structure without complicating processes for TFTs and further can inhibit cost increase. The liquid crystal display is characterized in that: a pixel part is provided with a liquid crystal element and a pixel having a TFT controlling a voltage applied to the liquid crystal element; a TFT that a driving circuit has and the TFT controlling the voltage applied to the liquid crystal element have a gate electrode, a gate insulating film formed on the gate electrode, a 1st semiconductor film overlapping with the gate electrode across the gate insulating film, and a couple of 2nd semiconductor films formed on the 1st semiconductor film; impurities which impart a one-conductivity type are added to the couple of 2nd semiconductor films; and the 1st semiconductor film is formed of a semiamorphous semiconductor.
Description
Technical field
The present invention relates to a kind of liquid crystal display device, this liquid crystal display device uses thin film transistor (TFT) as its driving circuit and pixel portion.
Background technology
The liquid crystal display device that forms with the glass substrate of cheapness is along with the increase of resolution, and the zone (architrave zone) around the pixel portion that is used for installing increases at the substrate proportion, and the tendency of the exquisitenessization that hinders liquid crystal display device is arranged.So, can think that the mode that the IC (integrated circuit) that will form with monocrystalline silicon piece is installed to glass substrate has its boundary.Be formed on same technology on the glass substrate, loading system on the just so-called panel (system on panel) is changed and is received publicity with comprising the integrated circuit of driving circuit and pixel portion one integrated mass.
Use the mobility ratio of the thin film transistor (TFT) (polycrystalline TFT) of polycrystal semiconductor film to use high 2 figure places of mobility of the TFT of amorphous semiconductor film, have can with the pixel portion of liquid crystal display device and the driving circuit one integrated mass around it be formed on same advantage on the substrate.But, compare with the TFT that uses amorphous semiconductor film, because the complex process of crystallization semiconductor film, so correspondingly have the finished product and the ratio of raw material to lower the inferior position of cost up again.
For example, in the formation of polycrystal semiconductor film in the situation of normally used laser annealing method, in order to improve the density that crystallinity is necessary to guarantee the required energy.Therefore, the length of the major axis of laser beam has just had boundary, and the processing energy of crystallization process is reduced, and near the generation in the edge of laser beam is inhomogeneous, and consequently the size to substrate has had restriction.In addition, Laser Power Supply causes the crystallinity of semiconductor film to produce owing to self is inhomogeneous inhomogeneous, so the shortcoming of very difficult uniform treatment object being treated is arranged.
But the field effect mobility that forms the TFT of channel formation region with amorphous semiconductor film is at most 0.4 to 0.8cm
2About/Vsec.Therefore, use for pixel portion as on-off element, but the scan line drive circuit of selecting pixel or the driving circuit of providing the requirements such as signal-line driving circuit of vision signal to run up for this selecteed pixel are provided.
Summary of the invention
In view of the above problems, the purpose of this invention is to provide a kind of liquid crystal display device, this liquid crystal display device can be realized loading system on the panel under the situation of the process complications that does not make TFT, and suppresses cost.
The present invention uses the hemihedral crystal semiconductor film that crystal grain disperses to exist in amorphous semiconductor film to make thin film transistor (TFT) (TFT), thereby and this TFT is used for pixel portion or driving circuit is made liquid crystal display device.The mobility of using the TFT of hemihedral crystal semiconductor film is 2 to 10cm
2/ Vsec is to use 2 to 20 times of mobility of the TFT of amorphous semiconductor film, thus can with the part of driving circuit or whole driving circuit and pixel portion one integrated mass be formed on the same substrate.
And the hemihedral crystal semiconductor film is different with polycrystal semiconductor film, can be used as the hemihedral crystal semiconductor film and is formed directly on the substrate.Specifically, can use H
2With SiH
4Throughput ratio be diluted to 2 to 1000 times, preferably be diluted to 10 to 100 times, and form film by plasma CVD method.The hemihedral crystal semiconductor film of making according to said method comprises microcrystalline semiconductor film, and this microcrystalline semiconductor film comprises the crystal grain of 0.5nm to 20nm in amorphous semiconductor film.So, different with the situation of using polycrystal semiconductor film, need after forming semiconductor film, not carry out it is carried out the technology of crystallization.And, can be as using laser beam not come the crystallization semiconductor film, take place because of limited on the length of the major axis of laser beam, so the situation that the size of substrate also is restricted.In addition, can reduce the operation of making TFT, thus the ratio of liquid crystal display device finished product and raw material correspondingly can be improved, and reduce cost.
In addition, the present invention is just passable as long as form channel formation region with the hemihedral crystal semiconductor film at least.It all is the hemihedral crystal semiconductor that channel formation region there is no need on its film thickness direction, as long as its part comprises the hemihedral crystal semiconductor.
Liquid crystal display device comprises panel that provides liquid crystal cell and the module that the panel of the states such as IC that comprise controller is installed.Liquid crystal cell comprise pixel electrode, opposite electrode and be provided at pixel electrode and the opposite electrode between liquid crystal.And, the present invention relates in the process of making this liquid crystal display device, be equivalent to liquid crystal display device and finish the component substrate of a kind of pattern before, this component substrate provides control the current potential of vision signal to be supplied with the means of the pixel electrode of liquid crystal cell in each a plurality of pixels.Component substrate specifically can be any state, can be the state that only is formed with the pixel electrode of liquid crystal cell, also can be behind the film that forms the conducting film that will become pixel electrode, and is patterned to form pixel electrode state before.
Description of drawings
Fig. 1 is the sectional view of expression liquid crystal display device of the present invention;
Fig. 2 A, 2B are the circuit diagram and the sectional views of the pixel in the expression liquid crystal display device of the present invention;
Fig. 3 is the sectional view of expression liquid crystal display device of the present invention;
Fig. 4 is the figure of a pattern of the component substrate in the expression liquid crystal display device of the present invention;
Fig. 5 A, 5B are the figure of a pattern of the component substrate in the expression liquid crystal display device of the present invention;
Fig. 6 A, 6B are the block diagrams of the structure of expression liquid crystal display device of the present invention;
Fig. 7 A～7C is the figure of the manufacture craft of expression liquid crystal display device of the present invention;
Fig. 8 A～8C is the figure of the manufacture craft of expression liquid crystal display device of the present invention;
Fig. 9 A～9C is the figure of the manufacture craft of expression liquid crystal display device of the present invention;
Figure 10 A, 10B are the figure of the manufacture craft of expression liquid crystal display device of the present invention;
Figure 11 A, 11B are the figure of the pattern of the hemihedral crystal TFT in the expression liquid crystal display device of the present invention;
Figure 12 A, 12B are the patterns that expression is used for the shift register of liquid crystal display device of the present invention;
Figure 13 A, 13B are the vertical view and the sectional views of expression liquid crystal display device of the present invention;
Figure 14 A～14C is the figure that the electron device of liquid crystal display device of the present invention is used in expression.
Selection figure of the present invention is Fig. 1
Embodiment
Below, award explanation with reference to the accompanying drawings about embodiments of the present invention.But the present invention may implement by different ways, and it is exactly that its mode and detailed content can be transformed to various forms that those skilled in the art can understand a fact at an easy rate, and does not break away from aim of the present invention and scope thereof.Therefore, the present invention should not be interpreted as only being limited in the content that present embodiment puts down in writing.
Then, explanation is used in the structure of the TFT of liquid crystal display device of the present invention.Fig. 1 shows the TFT that is used for driving circuit and is used for the sectional view of the TFT of pixel portion.101 are equivalent to be used for the sectional view of the TFT of driving circuit, and 102 be equivalent to be used for the sectional view of the TFT of pixel portion, and 103 are equivalent to obtain through described TFT 102 sectional view of the liquid crystal cell of supply of current.TFT the 101, the 102nd, and is anticlinal to type (bottom gate type).Note, though the mobility than for the p type time is higher when hemihedral crystal TFT is the n type, so n type hemihedral crystal TFT is more suitable for being used for driving circuit,, TFT of the present invention can be that the n type also can be the p type.No matter use the TFT of which polarity, be formed on the TFT identical polar preferably on the same substrate, can reduce operation like this.
The TFT 101 of driving circuit is included in the gate electrode 110 that forms on first substrate 100; The gate insulating film 111 of covering grid electrode 110; And overlapping first semiconductor film 112 that constitutes by the hemihedral crystal semiconductor film of therebetween gate insulating film 111 and gate electrode 110.And TFT 101 also comprises a pair of second semiconductor film 113 that plays a role as source region or drain region; And be provided at the 3rd semiconductor film 114 between first semiconductor film 112 and second semiconductor film 113.
Among Fig. 1, gate insulating film 111 is formed by 2 layers of dielectric film, but the present invention is not limited to this structure.Gate insulating film 111 also can be made of individual layer or the dielectric film more than 3 layers or 3 layers.
In addition, second semiconductor film 113 is formed by amorphous semiconductor film or hemihedral crystal semiconductor film, is doped with the impurity of giving a conductivity type in this semiconductor film.And the channel formation region territory of a pair of second semiconductor film, 113 therebetween, first semiconductor film 112 faces one another.
In addition, the 3rd semiconductor film 114 is formed by noncrystalline semiconductor film or hemihedral crystal semiconductor film, and the conductivity type identical with second semiconductor film 113 arranged, and the characteristic of the electric conductivity lower than second semiconductor film 113 is arranged.Because the 3rd semiconductor film 114 plays a role as the LDD zone, thus can relax the electric field at the edge that concentrates on second semiconductor film 113 that plays a role as the drain region, thus can prevent hot carrier's effect.The 3rd semiconductor film 114 not necessarily must provide, but if provide, then can improve the resistance to pressure of TFT, and improves reliability.In addition,, so, do not give the impurity of n type, can obtain the semiconductor of n type conductivity type yet even when forming the 3rd semiconductor film 114, specially do not mix if TFT 101 is n types.So, when TFT 101 is the n type, mixes not necessarily must for the 3rd semiconductor film 114 and give the impurity of n type, give the impurity of p type electric conductivity but mix for first semiconductor film that forms raceway groove, and control this conductivity type and make it as far as possible near polarity I type.
In addition, form wiring 115 and it is connected with a pair of second semiconductor film 113.
The TFT 102 of driving circuit is included in the gate electrode 120 that forms on first substrate 100; The gate insulating film 111 of covering grid electrode 120; And overlapping first semiconductor film 122 that constitutes by the hemihedral crystal semiconductor film of therebetween gate insulating film 111 and gate electrode 120.And TFT 102 also comprises a pair of second semiconductor film 123 that plays a role as source region or drain region; And be provided at the 3rd semiconductor film 124 between first semiconductor film 122 and second semiconductor film 123.
In addition, second semiconductor film 123 is formed by amorphous semiconductor film or hemihedral crystal semiconductor film, is doped with the impurity of giving a conductivity type in this semiconductor film.And, the channel formation region territory of a pair of second semiconductor film, 123 therebetween, first semiconductor film 122 and facing one another.
In addition, the 3rd semiconductor film 124 is formed by noncrystalline semiconductor film or hemihedral crystal semiconductor film, and the conductivity type identical with second semiconductor film 123 arranged, and the characteristic of the electric conductivity lower than second semiconductor film 123 is arranged.Because the 3rd semiconductor film 124 plays a role as the LDD zone, thus can relax the electric field at the edge that concentrates on second semiconductor film 123 that plays a role as the drain region, thus can prevent hot carrier's effect.The 3rd semiconductor film 124 not necessarily must provide, but if the 3rd semiconductor film is provided, then can improve the resistance to pressure of TFT, and improves reliability.In addition,, so, do not give the impurity of n type, can obtain the semiconductor of n type conductivity type yet even when forming the 3rd semiconductor film 124, specially do not mix if TFT 102 is n types.So, when TFT 102 is the n type, mixes not necessarily must for the 3rd semiconductor film 124 and give the impurity of n type, give the impurity of p type electric conductivity but mix for first semiconductor film that forms raceway groove, and control this conductivity type and make it as far as possible near polarity I type.
In addition, form wiring 125 and it is connected with a pair of second semiconductor film 123.
Formation is by insulation film formed first passivating film 140, second passivating film 141 and make it cover TFT 101,102 and connect up 115,125.The passivating film that covers TFT 101,102 is not limited to 2 layers of structure, can be that individual layer also can be the structure more than 3 layers or 3 layers.For example, can form first passivating film 140, form second passivating film 141 with monox with silicon nitride.Form the degeneration that passivating film can prevent that TFT 101,102 from causing because of the influence of moisture or oxygen with silicon nitride or nitride-monox.
Wiring side's therebetween of 215 wiring 160 is connected with the pixel electrode 130 of liquid crystal cell 103, and on pixel electrode 130 the connected oriented film 131 of formation.On the other hand, on therebetween pixel electrode 130 second substrate 170 relative, form lamination by the sequential cascade of opposite electrode 171 and oriented film 142 with first substrate 100.Then, provide liquid crystal 143 between pixel electrode 130 and oriented film 131 and opposite electrode 171 and oriented film 142, pixel electrode 130 and liquid crystal 143 and opposite electrode 171 overlapping parts are equivalent to liquid crystal cell 103.In addition, the distance between pixel electrode 130 and the opposite electrode 171 (cell gap) is by separation material 161 controls.Among Fig. 1, form separation material 161 thereby dielectric film is carried out patterning, but also the spherical separation material of preparing in addition can be dispersed on the oriented film 131, thus control gap.Reference number 162 is equivalent to encapsulant, liquid crystal 143 can be sealed between first substrate 100 and second substrate 170 with sealing material 162.
The reverse side that is formed with TFT 101 and TFT 102 at first substrate 100 provides polarization plate 150.And provide polarization plate 151 at the reverse side that is formed with opposite electrode 171 of second substrate 170.Notice that the quantity about oriented film and polarization plate of liquid crystal display device of the present invention is not limited to structure shown in Figure 1 with the position that provides.
In the present invention, form by the hemihedral crystal semiconductor because comprise first semiconductor film of channel formation region, so, compare the TFT that can obtain high mobility with TFT with amorphous semiconductor film, therefore, driving circuit and pixel portion can be formed on the same substrate.
Then, other structures of the pixel that explanation liquid crystal display device of the present invention is comprised.A pattern of the circuit diagram of Fig. 2 A remarked pixel, Fig. 2 B represents a pattern with the cross-section structure of the pixel of Fig. 2 A correspondence.
In Fig. 2 A, 2B, 201 are equivalent to control the switch TFT to the pixel incoming video signal, and 202 are equivalent to liquid crystal cell.Specifically, the current potential that inputs to the vision signal of pixel with TFT 201 via switch is supplied to the pixel electrode of liquid crystal cell 202.Reference number 203 be equivalent to when switch be to keep the pixel electrode of liquid crystal cell 202 and the capacity cell of the voltage between the electrode of opposite when (OFF) with TFT 201.
Specifically, with among the TFT 201, gate electrode is connected with sweep trace G at switch, and a side in source region and drain region is connected with signal wire S, and the pixel electrode 204 of the opposing party and liquid crystal cell 202 is connected.In two electrodes that capacity cell 203 comprises, the pixel electrode 204 of electrode and liquid crystal cell 202 is connected, and another electrode is supplied to certain current potential, and this current potential is preferably identical with the opposite electrode.
In addition, in Fig. 2 A, 2B, switch TFT201 is multiple-grid (multi gate) structure of serial connection and public first semiconductor film of the connected a plurality of TFT of gate electrode, and multi-gate structure can lower switch (ending) OFF electric current with TFT 201.Switch shown in concrete Fig. 2 A, Fig. 2 B is two TFT structures that connect in upright arrangement with TFT 201, connects but also can be that 3 TFT are in upright arrangement, and the connected multi-gate structure of gate electrode.In addition, switch not necessarily must be a multi-gate structure with TFT, also can be that gate electrode and channel formation region territory are the TFT of common single grid structure of odd number.
Then explanation is different from the TFT that the liquid crystal display device of the present invention of Fig. 1, pattern shown in Figure 2 comprises.Fig. 3 represent to be used for driving circuit TFT sectional view and be used for the sectional view of the TFT of pixel portion.301 are equivalent to be used for the sectional view of the TFT of driving circuit, and 302 are equivalent to be used for the sectional view of the switch of pixel portion with TFT, and 303 are equivalent to the sectional view of liquid crystal cell.
The TFT 301 of driving circuit and the TFT 302 of pixel portion are included in the gate electrode 310,320 that forms on first substrate 300 respectively; The gate insulating film 311 of covering grid electrode 310,320; And overlapping first semiconductor film 312,322 that constitutes by the hemihedral crystal semiconductor film of therebetween gate insulating film 311 and gate electrode 310,320.And formation is by the film formed channel protection film 330,331 of insulation and make it cover the channel formation region territory of first semiconductor film 312,322.Channel protection film the 330, the 331st provides for the channel formation region that prevents first semiconductor film 312,322 in the technology of making TFT 301,302 is corroded.And TFT 301,302 also comprises a pair of second semiconductor film 313,323 that plays a role as source region or drain region respectively; And be provided at the 3rd semiconductor film 314,324 between first semiconductor film 312,322 and second semiconductor film 313,323.
Among Fig. 3, gate insulating film 311 is formed by 2 layers of dielectric film, but the present invention is not limited to this structure.Gate insulating film 311 also can be made of individual layer or the dielectric film more than 3 layers or 3 layers.
In addition, second semiconductor film 313,323 is formed by amorphous semiconductor film or hemihedral crystal semiconductor film, is doped with the impurity of giving a conductivity type in this semiconductor film.And, the channel formation region territory of a pair of second semiconductor film, 313,323 therebetween, first semiconductor film 312 and facing one another.
In addition, the 3rd semiconductor film 314,324 is formed by noncrystalline semiconductor film or hemihedral crystal semiconductor film, and the conductivity type identical with second semiconductor film 313,323 arranged, and the characteristic of the electric conductivity lower than second semiconductor film 313,323 is arranged.Because the 3rd semiconductor film 314,324 plays a role as the LDD zone, thus can relax the electric field at the edge that concentrates on second semiconductor film 313,323 that plays a role as the drain region, thus can prevent hot carrier's effect.The 3rd semiconductor film 314,324 not necessarily must provide, but if provide, then can improve the resistance to pressure of TFT, and improves reliability.In addition, if TFT the 301, the 302nd, the n type so, even specially do not mix and give the impurity of n type forming the 3rd semiconductor film, also can obtain the semiconductor of n type at 314,324 o'clock.So, as TFT the 301, the 302nd, during n type conductivity type, mix not necessarily must for the 3rd semiconductor film 314,324 and give the impurity of n type, give the impurity of p type electric conductivity, and control this conductivity type and make it as far as possible near polarity I type but give to mix in first semiconductor film that forms raceway groove.
In addition, form wiring 315,325 and it is connected with a pair of second semiconductor film 313,323.
Formation is by insulation film formed first passivating film 340, second passivating film 341 and make it cover TFT 301,302 and connect up 315,325.The passivating film that covers TFT 301,302 is not limited to 2 layers of structure, can be that individual layer also can be the structure more than 3 layers or 3 layers.For example, can form first passivating film 340, form second passivating film 341 with monox with silicon nitride film.Can prevent the degeneration that TFT 301,302 causes because of the influence of moisture or oxygen by forming passivating film with silicon nitride or nitride-monox.
Then, wiring side's therebetween of 325 wiring 360 is connected with the pixel electrode 370 of liquid crystal cell 303, and is connected to form oriented film 371 on pixel electrode 370.On the other hand, on therebetween pixel electrode 370 second substrate 372 relative, form lamination by the sequential cascade of opposite electrode 373 and oriented film 342 with first substrate 300.Then, provide liquid crystal 343 between pixel electrode 370 and oriented film 371 and opposite electrode 373 and oriented film 342, pixel electrode 370 and liquid crystal 343 and opposite electrode 373 overlapping parts are equivalent to liquid crystal cell 303.In addition, the distance between pixel electrode 370 and the opposite electrode 373 (cell gap) is by separation material 361 controls.Among Fig. 3, form separation material 361 thereby dielectric film is carried out patterning, but also the spherical separation material of preparing in addition can be dispersed on the oriented film 371, thus control gap.Reference number 362 is equivalent to encapsulant, liquid crystal 343 can be sealed between first substrate 300 and second substrate 372 with sealing material 362.
Can provide polarization plate at the reverse side that is formed with TFT 301 and TFT 302 of first substrate 300.Also can provide polarization plate in addition at the reverse side that is formed with opposite electrode 372 of second substrate 372.Notice that the quantity about oriented film and polarization plate of liquid crystal display device of the present invention is not limited to structure shown in Figure 3 with the position that provides.
Then explanation is used for the component substrate of liquid crystal display device of the present invention.
Fig. 4 shows a kind of pattern of component substrate, wherein only signal-line driving circuit 6013 is formed in addition, and the pixel portion 6012 on making this signal-line driving circuit 6013 and being formed on first substrate 6011 is connected.Pixel portion 6012 and scan line drive circuit 6014 are formed by hemihedral crystal TFT.With can obtain than hemihedral crystal TFT more the transistor of high mobility form signal-line driving circuit, can make the running of the driving frequency requirement signal-line driving circuit higher stable than scan drive circuit.In addition, signal-line driving circuit 6013 can be to use the transistor of single crystal semiconductor, the TFT of poly semiconductor or the transistor of use SOI.Supply with separately power supply potential and various signal respectively for pixel portion 6012, signal-line driving circuit 6013 and scan line drive circuit 6014 via FPC 6015.
In addition, signal-line driving circuit and scan line drive circuit can together be formed on the same substrate with pixel portion.
When other formation driving circuit, the substrate that not necessarily must will be formed with driving circuit is bonded on the substrate that is formed with pixel portion, for example can stick on the FPC.Fig. 5 A shows the pattern of another kind of component substrate, wherein only signal-line driving circuit 6023 is formed in addition, and pixel portion 6022 and scan line drive circuit 6024 on making this signal-line driving circuit 6023 and being formed on first substrate 6021 is connected.Pixel portion 6022 and scan line drive circuit 6024 are formed by hemihedral crystal TFT.Signal-line driving circuit 6023 is connected with pixel portion 6022 via FPC 6025.Give pixel portion 6022, signal-line driving circuit 6023 and scan line drive circuit 6024 supply power current potential and various signal respectively via FPC 6025.
In addition, only the part of signal-line driving circuit or the part of scan line drive circuit are formed on the same substrate together with hemihedral crystal TFT and pixel portion, can be with the remaining that part of other formation of signal-line driving circuit or scan line drive circuit, and this part and pixel portion are electrically connected.Fig. 5 B shows a kind of pattern of component substrate, analog switch 6033a that wherein signal-line driving circuit is had and pixel portion 6032, scan line drive circuit 6034 are formed on the same substrate 6031, on different substrates, form the shift register 6033b that signal-line driving circuit has in addition, and bonding with above-mentioned substrate.Pixel portion 6032 and scan line drive circuit 6034 are formed by hemihedral crystal TFT.The mobile register 6033b that signal-line driving circuit has is connected with pixel portion 6032 via FPC 6035.Give pixel portion 6032, signal-line driving circuit and scan line drive circuit 6034 supply power current potential and various signal respectively via FPC 6035.
As Fig. 4, shown in Figure 5, liquid crystal display device of the present invention can be formed on part or all and pixel portion of driving circuit on the same substrate together with hemihedral crystal TFT.
In addition, the method for attachment of the substrate of Xing Chenging has no particular limits in addition, can use well-known COG (Chip On Glass) method or circuit combined techniques or TAB (TapeAutomated Bonding) method etc.As for link position, just be not limited to position shown in Figure 5 as long as can be electrically connected.Also have, also can connect the controller, CPU, storer of other formation etc.
The signal-line driving circuit that the present invention uses is not limited to include only the pattern of shift register and analog switch.Except shift register and analog switch, can also comprise other circuit such as buffer, level translator, source follower.In addition, shift register and analog switch must not provide, and that works selects other circuit of signal wire to replace shift memory as decoder circuit such as using, or use latch to wait to replace analog switch.
Fig. 6 A shows the block diagram of liquid crystal display device of the present invention.Liquid crystal display device shown in Fig. 6 A comprises: possess a plurality of pixel portion 701 that comprise the pixel of liquid crystal cell, select the scan line drive circuit 702 of each pixel, the signal-line driving circuit 703 that selecteed pixel incoming video signal is given in control.
Signal-line driving circuit 703 among Fig. 6 A comprises shift register 704, analog switch 705.Input clock signal (CLK), initial pulse signals (SP) are to shift register 704.Clock signal (CLK), initial pulse signals (SP) are imported into shift register 704, just produce clock signal in shift register 704, and this signal is imported into analog switch 705 then.
In addition, give analog switch 705 supplying video signals.Signal wire of next stage is supplied with in the clock signal that analog switch 705 is come in according to input (sampling) back of taking a sample.
The structure of scan line drive circuit 702 then is described.Scan line drive circuit 702 comprises shift register 706, buffer 707.In addition, according to circumstances also can be equipped with the current potential shifter.In scan line drive circuit 702, select signal by giving shift register 706 input clock signals (CLK), initial pulse signals (SP) thereby generating.The selection signal that generates is buffered amplification in buffer 707, and supplies to corresponding scanning line.Sweep trace is connected to the transistorized grid of the pixel of a line.Owing to must make the transistor of the pixel of a line become conducting (ON) simultaneously, buffer 707 uses the buffer that can flow through big electric current.
When panchromatic LCD in order with the sample video of corresponding R (red), G (green), B (indigo plant) and when supplying to corresponding signal lines, the terminal quantity that connects shift register 704 and analog switch 705 be equivalent to be connected analog switch 705 and pixel portion 701 signal wire terminal quantity about 1/3rd.Therefore, analog switch 705 and pixel portion 701 are formed on situation on the same substrate follows analog switch 705 is compared with the situation that pixel portion 701 is formed on the different substrates, can suppress to be used to connect the terminal quantity of the substrate of other formation, and can suppress the possibility that bad connection takes place, thereby improve the ratio of finished product and raw material.
Fig. 6 B shows the block diagram of the of the present invention liquid crystal display device different with Fig. 6 A.Signal-line driving circuit 713 shown in Fig. 6 B comprises shift register 714, latch A715, latch B716, D/A change-over circuit (DAC) 717.The composition that scan line drive circuit 712 comprises is identical with Fig. 6 A.
Input clock signal (CLK), initial pulse signals (SP) are to shift register 714.Clock signal (CLK), initial pulse signals (SP) are imported into shift register 714, just produce clock signal in shift register 714, and this signal is imported into first section latch A715 then.Clock signal one is imported into latch A 715, and then synchronous with this clock signal, vision signal is written to latch A 715 in order, and is saved.In addition, though Fig. 6 B hypothesis writes vision signal for latch A 715 in order, the present invention is not limited to this structure.Also multistage latch A 715 can be divided into several groups,, just carry out division driving by the parallel incoming video signal of group.The number of group in this case is called as cuts apart number.When for example latch being separated, be called as 4 division driving of cutting apart by four grades.
The latch to full level of latch A 715 is write during the time of vision signal till be all over is called line.In fact, exist online during in add in containing during above-mentioned line during the horizontal flyback during situation.
In case finish during 1 line, latch signal (Latch Signal) is provided for the 2nd grade of latch B 716, is latched vision signal that device A 715 keeps synchronously with this latch signal and is write latch B 716 simultaneously and be held.At the latch A 715 that has sent vision signal to latch B 716, once more with synchronous from the clock signal of shift register 714, writing of vision signal next time carried out in proper order.During this 1 line of second time, be written into latch B 716 and maintained vision signal and be imported into DAC 717.
The vision signal that is transfused at DAC 717 is simulation from digital conversion, and is supplied to signal lines.
In addition, the structure shown in Fig. 6 A, Fig. 6 B is a pattern of liquid crystal display device of the present invention, and the structure of signal-line driving circuit and scan line drive circuit is not limited thereto.
The concrete method for making of liquid crystal display device of the present invention then will be described.
Except glass and quartz, plastic material also can be used as the material of first substrate 10.In addition, can also use the substrate that on metal materials such as stainless steel or aluminium, forms dielectric film.On this first substrate 10, form conducting film 11 in order to forming gate electrode and grating routing (sweep trace).First conducting film 11 uses metal material or other alloy materials such as chromium, molybdenum, titanium, tantalum, tungsten, aluminium.This conducting film 11 can form (Fig. 7 A) with sputtering method or vacuum vapour deposition method.
Thereby conducting film 11 etching and processing are formed gate electrode 12,13.Because will on gate electrode, form first semiconductor film or wiring layer, so preferably cone-shaped is processed in its marginal portion.In addition, when the material that in order to aluminium is principal ingredient forms conducting film 11, make surface insulationization thereby after etching and processing, carry out anodized etc.In addition, though do not illustrate, can also in this technology, form the wiring (Fig. 7 B) that is connected with gate electrode synchronously.
Then, shown in Fig. 7 C,, it is played a role as gate insulating film by first dielectric film 14 and second dielectric film 15 being formed on the upper strata of gate electrode 12,13.In this case, it is desirable to, form silicon oxide film, form silicon nitride film as second dielectric film 15 as first dielectric film 14.These dielectric films can form with glow discharge decomposition method or sputtering method.Especially, under low film formation temperature, form the few fine and closely woven dielectric film of grid leak electricity, then can in reacting gas, comprise rare gas element such as argon and be doped in the dielectric film of formation.
Then, on the first such dielectric film 14, second dielectric film 15, form first semiconductor film 16.The semiconductor film that first semiconductor film, 16 usefulness comprise between the intermediate structure of amorphous and crystalline texture (containing monocrystalline and polycrystalline structure) forms.This semiconductor is the semiconductor with third state of free energy stabilizing, and comprises the crooked crystalloid zone of lattice of short-range order.Can be in non-single crystal semiconductor dispersion diameter be that the particle of 0.5-20nm exists.Neutralizing agent as dangling bonds (dangling bond) contains 1 atom % or more hydrogen or halogen at least.For convenience this semiconductor is called hemihedral crystal semiconductor (SAS) at this.And comprising rare gas elements such as helium, argon, krypton, neon therein can also promote lattice crooked more, increases the good SAS of the final acquisition of stability.About the semi-conductive narration of this SAS, for example be disclosed in United States Patent (USP) 4,409, No. 134.
Can form SAS with silicide gas by glow discharge decomposition method.Typical silicide gas is SiH
4, other can also use Si
2H
6, SiH
2Cl
2, SiHCl
3, SiCl
4, SiF
4Deng.In addition, this silicide gas usually can also be diluted with hydrogen or hydrogen and one or more rare gas units of being selected from helium, argon, krypton, the neon, thereby can easily obtain this SAS.The dilution rate of dilution silicide gas preferably is set at 10-1000 doubly.Certainly, the reaction of the film that decomposes according to glow discharge generates under reduced pressure to be carried out, but pressure approximately is set at about the scope of 0.1Pa-133Pa, for the electric power that forms glow discharge is set at 1MHz-120MHz, preferably supplies the High frequency power of 13MHz-60MHz.The heating-up temperature of substrate is preferably 300 degree or lower, recommends the substrate heating temperature of 100-200 degree.
In addition, in silicide gas, sneak into CH
4, C
2H
6Deng carbide gas; GeH
4, GeF
4Deng the germanium oxidizing gases, and can be with fabric width to be adjusted to 1.5, or 0.9 to 1.1eV to 2.4eV.
SAS is deliberately undoping with the control valence electron when being the impurity element of purpose, show weak n type electrical conductance, thus when giving first semiconductor film in the channel formation region territory that TFT is provided and this film forming or the impurity element of giving the p type that after film forming, mixes can control threshold values.Impurity element as giving the p type is typically boron, at B
2H
6, BF
3Sneak into silicide gas etc. foreign gas with the ratio of 1ppm to 1000ppm.The concentration of boron for example can be 1 * 10
14Atoms/cm
3To 6 * 10
16Atoms/cm
3
Then, shown in Fig. 8 A, form second semiconductor film 17.Second semiconductor film 17 is that the film and first semiconductor film 16 that form when deliberately to undope with the control valence electron be the impurity element of purpose are same, preferably forms with SAS.This second semiconductor film 17 is owing to be to form between the 3rd semiconductor film 18 with a conductivity type of formation source and leakage and first semiconductor film 16, so the effect of cushion is arranged.Therefore, with respect to first semiconductor film 16 that weak n type electric conductivity is arranged, when the 3rd semiconductor film 18 of a conductivity type that is formed with same conductivity, not necessarily must form second semiconductor film 17.Be purpose with the control threshold values, and when the impurity element of p type was given in doping, second semiconductor film 17 having the effect that impurity concentration is changed, is in order to form the preferred pattern that engages well.That is to say that the function in the low concentration impurity district (LDD zone) that is formed between channel formation region territory and source or the drain region can be arranged among the TFT of formation.
When forming the TFT of n channel-type, can mix as the phosphorus of typical impurity element, and add PH to silicide gas with the 3rd semiconductor film 18 that a conductivity type is arranged
3Etc. foreign gas.There is the 3rd semiconductor film 18 of a conductivity type to form by the semiconductor as SAS, amorphous semiconductor or crystallite semiconductor.
According to above-mentioned steps, can under the situation that does not contact atmosphere, form continuously from first dielectric film 14 to the 3rd semiconductor film 18 that a conductivity type is arranged.In other words, under the situation of the pollution of the pollution impurity element that in not being subjected to Atmospheric components or atmosphere, swims, can form each stacked interface, so can lower the inhomogeneous of TFT characteristic.
Then, form mask 19 with photoresist, and to first semiconductor film 16, second semiconductor film 17, have the 3rd semiconductor film 18 of a conductivity type to carry out to be etched with the released state (Fig. 8 B) that forms as the island shape.
Afterwards, form second conducting film 20, and with this conducting film formation and source and leak the wiring that is connected.Second conducting film, 20 usefulness aluminium or be that the conductive material of principal ingredient forms with aluminium, but the rhythmo structure that layer also can use the nitride formation of titanium, tantalum, molybdenum or these elements that is connected with semiconductor film.In order to improve thermotolerance, can give the element (Fig. 8 C) of aluminium with 0.5-5 atom % Doped with Titanium, silicon, scandium, neodymium, copper etc.
Then form mask 21.Mask 21 is the masks for the pattern that forms the wiring that is connected with source and leakage, also can be also used as removing second semiconductor film 17 simultaneously and the etching mask of the 3rd semiconductor film 18 of a conductivity type with formation source region and drain region and LDD district arranged.Aluminium or be that the etching of the conducting film of principal ingredient can be used BCl with aluminium
3, Cl
2Carry out etc. chloride gas.Form wiring 23-26 by this etching and processing.In addition, though for forming the etching use SF of channel formation region
6, NF
3, CF
4Carry out etching Deng fluoride gas, but can not obtain in this case and as the selection ratio of first semiconductor film 16 of basilar memebrane, so need suitably regulate the processing time.According to above-mentioned steps, can form the structure (Fig. 9 A) of the TFT of raceway groove corrosion type.
Then, forming with the protection channel formation region with silicon nitride film is the 3rd dielectric film 27 of purpose.Though this silicon nitride film can form with sputtering method or glow discharge decomposition method, the intrusion that it is fine and closely woven film to stop that the organism that swims in atmosphere or metal object, water vapor etc. pollute impurity that this film requires.As the 3rd dielectric film 27, can make oxygen concentration in first semiconductor film 16 with silicon nitride film 5 * 10
19Atoms/cm
3Or lower, preferred 1 * 10
19Atoms/cm
3Or lower scope.In order to reach this order, be target with silicon, with the sputter gas that mixes rare gas such as nitrogen and argon, form by the silicon nitride film of high-frequency sputtering, contain the rare gas element in the film thereby make, consequently promoted fine and closely wovenization of film.In addition, in glow discharge decomposition method, with silicide gas with inert gases such as argon (rare gas) even 100 times to 500 times of dilutions and the low temperature of silicon nitride film below 100 degree that forms also can form fine and closely woven film, so this silicon nitride film is desirable.And, if necessary, can use stacked formation the 4th dielectric film 28 of silicon oxide film.The 3rd dielectric film 27 and the 4th dielectric film 28 are equivalent to passivating film.
Then, on the 3rd dielectric film 27 and/or the 4th dielectric film 28, form leveling film 29.Leveling film 29 is that the dielectric film that comprises Si-O combination and Si-CHx combination that material forms that sets out forms in order to organic resin such as acrylic acid, polyimide, polyamide or siloxy group material preferably.Then, in the 3rd dielectric film 27, the 4th dielectric film 28, leveling film 29, form contact hole, and on leveling film 29, form the wiring 30-33 (Fig. 9 B) that is connected with each wiring 23-26.
Wiring 30-33 is by being selected from the element among Ta, W, Ti, Mo, Al, the Cu or being that the alloy or the compound of principal ingredient forms with above-mentioned element.Perhaps use the lamination of these conducting film.For example can be that ground floor is that Ta, the second layer are W; Ground floor is that TaN, the second layer are Al; Ground floor is that TaN, the second layer are Cu; Ground floor is that Ti, the second layer are that Al, the 3rd layer are the combination of Ti.In addition, in the ground floor and the second layer either party can use the AgPdCu alloy.Also can be the sequential cascade of alloy (Al-Si), TiN by W, Al and Si and the 3-tier architecture that forms.Can also replace tungsten (W) with tungsten nitride, replace the alloy (Al-Si) of Al and Si, replace TiN with Ti with the alloy film (Al-Ti) of Al and Ti.
Then, shown in Figure 10 A, on leveling film 29, form pixel electrode 35 and it is connected with wiring 33.Though in Figure 10, show with nesa coating and form pixel electrode 35, thus the example of making permeation type liquid crystal display device, and liquid crystal display device of the present invention is not limited to this structure.Thereby also can form pixel electrode and form reflective type liquid crystal display device with easy catoptrical conducting film.In this case, a wiring part of 33 can be used as pixel electrode and uses.
The raceway groove corrosion type TFT that forms according to above step can obtain 2-10cm by constituting the channel formation region territory with SAS
2The field effect mobility of/Vsec.So this TFT can be used as the switch element of pixel, and the element that can be used as the driving circuit that forms sweep trace (grid line) side utilizes.
Like this, the on-off element of pixel uses identical TFT with the driving circuit of scan line side, and can be with adding up to 5 masks, that is: be used for mask, the mask that is used for semiconductor regions formation, be used to connect up mask, the mask that is used for contact hole formation that forms, the mask that is used for pixel electrode formation that gate electrode forms, form component substrate.
Then, in wiring 32 or connect up and form separation material 36 with dielectric film on 33.Attention has illustrated the example that forms separation material 36 in wiring 32 with monox in Figure 10 A.But pixel electrode 35 and separation material 36 can form in advance.
Then, form the oriented film 37 that covers wiring 30-33, separation material 36, pixel electrode 35, and the stranding (rubbing) that rubs is handled.
Then, shown in Figure 10 B, form the encapsulant 40 of encapsulated liquid crystals.On the other hand, prepare second substrate 42, the oriented film 44 that this second substrate is formed with the opposite electrode 43 that uses nesa coating and the stranding of having implemented to rub is handled.Then, the regional dispenser method 41 of surrounding for sealed material 40 makes under opposite electrode 43 and the pixel electrode 35 aspectant states, pastes thereon with second substrate 42 that encapsulant 40 will be prepared in addition.Note, can mix filling agent to encapsulant.
In addition, can provide color filter or prevent shielding film (black matrix") of disclination (disclination) etc.In addition, polarization plate 51 is pasted the back side of the face that is formed with TFT of first substrate 10, and, polarization plate 52 is pasted the back side of the face that is formed with opposite electrode 43 of second substrate 42.
The nesa coating that is used for pixel electrode 35 or opposite electrode 43 can also use the material that has mixed the zinc paste (ZnO) of 2%-20% to indium oxide except ITO, IZO, ITSO.Just formed liquid crystal cell 55 after pixel electrode 35 and liquid crystal 41 and opposite electrode 43 are overlapping.
The injection of above-mentioned liquid crystal is adopted and is broadcasted sowing (dispenser) mode (mode promptly instils), but the present invention is not subjected to the restriction of this mode.Also can adopt behind bonding second substrate utilizes capillarity to inject the impregnation method of liquid crystal.
In addition, though Fig. 7-Figure 10 shows the method for making of the TFT of structure shown in Figure 1, also can be manufactured with the TFT of structure shown in Figure 3 equally.When making the TFT of structure as shown in Figure 3, different with Fig. 7-Figure 10 in the step that overlaps to form the channel protection film 330,331 on first semiconductor film 312,322 that forms with SAS on the gate electrode 310,320.
Present embodiment will illustrate the pattern of the hemihedral crystal TFT that liquid crystal display device of the present invention has.
Figure 11 A is the vertical view of the hemihedral crystal TFT of present embodiment, and Figure 11 B is the sectional view along the cutting of the A-A ' among Figure 11 A.1301 its parts of expression are as the grating routing of gate electrode performance function, and therebetween gate insulating film 1302 and first semiconductor film 1303 that is formed by the hemihedral crystal semiconductor are overlapping.In addition, form the second semiconductor film 1304a, the 1304b that play a role as the LDD zone be connected with first semiconductor film 1303, and formation the 3rd semiconductor film 1305a, the 1305b that a conductivity type is arranged that are connected with the second semiconductor film 1304a, 1304b.In addition, 1306,1307 are equivalent to the wiring that is connected with the 3rd semiconductor film 1305a, 1305b.
In hemihedral crystal TFT shown in Figure 11,, can keep certain raceway groove long by keeping certain the 3rd semiconductor film 1305a and the interval of the 3rd semiconductor film 1305b.In addition, surround the edge of the 3rd semiconductor film 1305b, can relax electric field in the drain region of channel formation region side and concentrate by arranging the 3rd semiconductor film 1305a.And, can improve the ratio of the long raceway groove fabric width of relative raceway groove, consequently can improve conducting (ON) electric current.
Present embodiment will illustrate all patterns of the shift register of unified hemihedral crystal TFT of polarity of using.The structure of the shift register of Figure 12 A explanation present embodiment.Shift register shown in Figure 12 A uses first clock signal clk, second clock signal CLKb, initial pulse signals SP to operate.1401 indicating impulse output circuits, its concrete structure is illustrated among Figure 12 B.
The then running of the impulse output circuit 1401 shown in the key diagram 12B.Notice that CLK, CLKb, SP are Vdd when being the level of H, are Vss during for the L level, and for explanation is oversimplified, suppose Vss=0.
When SP became the H level, TFT 801 became conducting (ON) state, so the current potential of the grid of TFT 805 rises.Final when the grid current potential of TFT 805 becomes Vdd-Vth (Vth is the threshold values of TFT801-806), TFT 801 becomes by (OFF), becomes floating state.On the other hand, because when SP becomes the H level, TFT804 becomes conducting (ON) state, and the current potential decline of TFT802,806 grid finally becomes Vss, and like this, TFT 802,806 becomes the OFF state.The grid of TFT 803 become the L level at this moment, are by (OFF) state.
Then, SP becomes the L level, and TFT 801,804 becomes the OFF state, and the grid current potential of TFT 805 remains on Vdd-Vth.At this, if the grid of TFT 805, the voltage between the source on its threshold values Vth, then TFT 805 becomes conducting (ON) state.
Then, as the CLK that supplies to node (node) 1 becomes the H level from the L level, and then TFT 805 is conducting (ON) states, so, node 4, just the current potential in the source of TFT 805 begins to rise.And owing to exist electric capacity combination according to capacity cell 807 between grid-source of TFT 805, be accompanied by the rising of the current potential of node 4, the current potential of grid that becomes the TFT 805 of floating state rises once more.Finally, the current potential of the grid of TFT 805 is more taller than Vdd+Vth, and the current potential of node 4 is identical with Vdd.And above-mentioned running is performed in the later impulse output circuit 1401 of subordinate phase equally, and pulse is exported in regular turn.
In the present embodiment, the outward appearance of the panel (panel) of a pattern that is equivalent to liquid crystal display device of the present invention is described with Figure 13.Figure 13 A is the vertical view of panel, wherein, will the hemihedral crystal TFT 4010 that forms on first substrate 4001 and liquid crystal cell 4011 usefulness encapsulants 4005 are sealed in and second substrate 4006 between.Figure 13 B is equivalent to along the sectional view of the cutting of the A-A ' among Figure 13 A.
Provide to surround and be formed on the pixel portion 4002 on first substrate 4001, the encapsulant 4005 of scan line drive circuit 4004.Second substrate 4006 is provided on pixel portion 4002, scan line drive circuit 4004.Therefore, pixel portion 4002 and scan line drive circuit 4004 and liquid crystal 4007 are together by first substrate 4001, encapsulant 4005,4006 sealings of second substrate.In addition, the zone beyond sealed material 4005 area surrounded on first substrate 4001 is installed in the signal-line driving circuit 4003 that forms with polycrystal semiconductor film on the substrate of other preparation.Note, though the example of pasting the signal-line driving circuit that comprises the TFT that uses polycrystal semiconductor film on first substrate 4001 has been described in the present embodiment, but form signal-line driving circuit with the transistor that uses single crystal semiconductor, and then stickup also can.Figure 13 A, 13B show the example that is included in the TFT4009 that forms with polycrystal semiconductor film in the signal-line driving circuit 4003.
The pixel portion 4002 and the scan line drive circuit 4004 that are provided on first substrate 4001 comprise a plurality of TFT, and Figure 13 B example illustrates the TFT 4010 that is included in pixel portion 4002.TFT4010 is equivalent to use the semi-conductive TFT of hemihedral crystal.
In addition, 4011 are equivalent to liquid crystal cell, and pixel electrode 4030 that liquid crystal cell 4011 comprises and TFT 4010 are situated between and are electrically connected by wiring 4040, wiring 4041.The opposite electrode 4031 of liquid crystal cell 4011 is formed on second substrate 4006.Pixel electrode 4030 and opposite electrode 4031 and liquid crystal 4007 overlapping parts are equivalent to liquid crystal cell 4011.
In addition, the spherical separation material of 4035 expressions is for the distance of controlling between pixel electrode 4030 and the opposite electrode 4031 (cell gap) provides.Note, also can use dielectric film is carried out the separation material that obtains behind the patterning.
In the sectional view shown in Figure 13 B, do not illustrate though be fed to the signal-line driving circuit 4003 of other formation and the various signals and the current potential of scan line drive circuit 4004 or pixel portion 4002, be situated between by supplying with from connecting terminal 4016 around wiring 4014 and 4015.
In the present embodiment, connecting terminal 4016 usefulness form with the pixel electrode 4030 identical conducting films that liquid crystal cell 4011 has.In addition, form with the 4041 identical conducting films that connect up around wiring 4014 usefulness.Form with the 4040 identical conducting films that connect up around wiring 4015 usefulness.
The terminal that connecting terminal 4016 and FPC 4018 have is situated between and is electrically connected by anisotropic conductive film 4019.
In addition, first substrate 4001 and second substrate 4006 can use glass substrate, ceramic substrate, plastic.As plastic, can use FRP (glass fiber reinforced plastics) plate, PVF (polyvinyl fluoride) film, Mai La (Mylar) film, polyester film or acrylic film.In addition, can also use the thin plate of the structure of folder aluminium foil between PVF film or membrane advanced in years.
Notice that it must be transparent being positioned at the substrate that takes out on the direction of light from liquid crystal cell 4011.In this case, use glass plate, plastics, polyester film or acrylic film etc. that the material of light transmission is arranged.
In addition, though do not illustrate, the liquid crystal display device shown in the present embodiment comprises oriented film and polarization plate, and, can also comprise color filter and shielding film.
Though Figure 13 shows other formation signal-line driving circuit 4003, be installed to the example of first substrate 4001 then, but present embodiment is not limited to this structure, install again after also can forming scan line drive circuit in addition, install again after also can only forming the part of the part of signal-line driving circuit or scan line drive circuit in addition.
The textural association that present embodiment can be described with other embodiment and implementing.
The image-reproducing means etc. that use the electron device of liquid crystal display device of the present invention to comprise video camera, digital camera, goggle-type display (head-mounted display), navigational system, sound reproduction equipment (hoot device, stereo set etc.), notebook personal computer, game machine, portable data assistance (mobile computer, mobile phone, portable game machine, e-book etc.), to comprise recording medium (more particularly, can reproduce the device of recording medium such as digital universal disc (DVD) etc., and comprise the display that is used for the display reproduction image).The present invention is because needn't carry out crystallization process after forming semiconductor film, the large scaleization of panel becomes easily comparatively speaking, so be quite useful to the electron device of the large-scale panel of use 10-50 inch.Below the object lesson of these electron devices will be described with Figure 14 A-14C.
Figure 14 A represents display device, and it comprises framework 2001, brace table 2002, display part 2003, speaker portion 2004, video input terminal 2005 etc.In the display part 2003, can finish display device of the present invention by used for liquid crystal display device that the present invention is made.The liquid crystal cell display device comprises all displays spare that is used for display message, as receiver, the advertisement display of personal computer, TV broadcasting.
Figure 14 B represents notebook personal computer, and it comprises main body 2201, shell 2202, display part 2203, keyboard 2204, outside connector 2205, click the mouse 2206 etc.In the display part 2203, can finish personal computer of the present invention by used for liquid crystal display device that the present invention is made.
Figure 14 C represents to comprise the pocket image-reproducing means (being specially the DVD transcriber) of recording medium, and it comprises main body 2401, shell 2402, display part A 2403, another display part B 2404, recording medium (DVD etc.) reading section 2405, operating key 2406, speaker portion 2407 etc.Display part A 2403 is mainly used in displays image information, and display part B 2404 is mainly used in videotex information.Note comprising that the image-reproducing means of recording medium also comprises home game machine etc.In display part A 2403 and display part B 2404, can finish image-reproducing means of the present invention by used for liquid crystal display device that the present invention is made.
As mentioned above, the scope of application of the present invention is very extensive, can use on the electron device of all spectra.And the electron device of present embodiment also can use the liquid crystal display device of the arbitrary structure shown in the embodiment 1～3.
The present invention can save at the crystallization process that forms the semiconductor film that carries out behind the film, realizes that under the situation that the technology that does not make TFT becomes complicated the panel of liquid crystal display device is uploaded systematization.
Claims (9)
1. liquid crystal display device comprises:
Pixel portions; And
Be used to control the driving circuit of described pixel portions work,
In described pixel portions, be provided with pixel, the TFT that this pixel has liquid crystal cell and the voltage that imposes on described liquid crystal cell is controlled,
And TFT that described driving circuit has and the TFT that the voltage that imposes on described liquid crystal cell is controlled use the hemihedral crystal semiconductor that comprises amorphous and crystalline texture at channel formation region.
2. liquid crystal display device comprises:
Pixel portions; And
Be used to control the driving circuit of described pixel portions work,
In described pixel portions, be provided with pixel, the TFT that this pixel has liquid crystal cell and the voltage that imposes on described liquid crystal cell is controlled,
And TFT that described driving circuit has and the TFT that the voltage that imposes on described liquid crystal cell is controlled comprise:
Gate electrode and the gate insulating film that on described gate electrode, forms; The described gate insulating film of therebetween and with first semiconductor film of described gate electrode; And a pair of second semiconductor film that on described first semiconductor film, forms,
Wherein, in described a pair of second semiconductor film, be doped with the impurity that gives a kind of conductivity type,
And described first semiconductor film is formed by the hemihedral crystal semiconductor that comprises amorphous and crystalline texture.
3. liquid crystal display device comprises:
Pixel portions; And
Be used to control the driving circuit of described pixel portions work,
In described pixel portions, be provided with pixel, the TFT that this pixel has liquid crystal cell and the voltage that imposes on described liquid crystal cell is controlled,
And TFT that described driving circuit has and the TFT that the voltage that imposes on described liquid crystal cell is controlled comprise:
Gate electrode and the gate insulating film that on described gate electrode, forms; The described gate insulating film of therebetween and with first semiconductor film of described gate electrode; A pair of second semiconductor film that on described first semiconductor film, forms; And between described first semiconductor film and described a pair of second semiconductor film, with a pair of the 3rd semiconductor film that is provided with the overlapping mode of described a pair of second semiconductor film,
Wherein, in described a pair of second semiconductor film, be doped with the impurity that gives a kind of conductivity type,
And the impurity that mixes in described first semiconductor film is the impurity with conductivity type opposite with the impurity that gives described a kind of conductivity type,
And described first semiconductor film is formed by the hemihedral crystal semiconductor that comprises amorphous and crystalline texture.
4. liquid crystal display device comprises:
Pixel portions; And
Be used to control the driving circuit of described pixel portions work,
In described pixel portions, be provided with pixel, the TFT that this pixel has liquid crystal cell and the voltage that imposes on described liquid crystal cell is controlled,
And TFT that described driving circuit has and the TFT that the voltage that imposes on described liquid crystal cell is controlled comprise:
Gate electrode and the gate insulating film that on described gate electrode, forms; The described gate insulating film of therebetween and with first semiconductor film of described gate electrode; Described gate insulating film of therebetween and described first semiconductor film and with the channel protection film of described gate electrode; And a pair of second semiconductor film that on described first semiconductor film, forms,
Wherein, described channel protection film between described a pair of second semiconductor film,
And, in described a pair of second semiconductor film, be doped with the impurity that gives a kind of conductivity type,
And described first semiconductor film is formed by the hemihedral crystal semiconductor that comprises amorphous and crystalline texture.
5. liquid crystal display device comprises:
Pixel portions; And
Be used to control the driving circuit of described pixel portions work,
In described pixel portions, be provided with pixel, the TFT that this pixel has liquid crystal cell and the voltage that imposes on described liquid crystal cell is controlled,
And TFT that described driving circuit has and the TFT that the voltage that imposes on described liquid crystal cell is controlled comprise:
Gate electrode and the gate insulating film that on described gate electrode, forms; The described gate insulating film of therebetween and with first semiconductor film of described gate electrode; Described gate insulating film of therebetween and described first semiconductor film and with the channel protection film of described gate electrode; A pair of second semiconductor film that on described first semiconductor film, forms; And between described first semiconductor film and described a pair of second semiconductor film, with a pair of the 3rd semiconductor film that is provided with the overlapping mode of described a pair of second semiconductor film,
Wherein, in described a pair of second semiconductor film, be doped with the impurity that gives a kind of conductivity type,
And the impurity that mixes in described first semiconductor film is the impurity with conductivity type opposite with the impurity that gives described a kind of conductivity type,
And described first semiconductor film is formed by the hemihedral crystal semiconductor that comprises amorphous and crystalline texture.
6. according to each described liquid crystal display device in the claim 2 to 5, wherein,
Described a kind of conductivity type is the n type.
7. according to each described liquid crystal display device in the claim 1 to 5, wherein,
TFT that described driving circuit has and the TFT that the voltage that imposes on described liquid crystal cell is controlled are covered by silicon nitride film or silicon oxynitride film.
8. according to each described liquid crystal display device in the claim 1 to 5, wherein,
The TFT that the voltage that imposes on described liquid crystal cell is controlled has multi-gate structure.
9. according to each described liquid crystal display device in the claim 1 to 5, wherein,
Described driving circuit comprises analog switch.
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| US7738050B2 (en) * | 2007-07-06 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device |
| US7611930B2 (en) * | 2007-08-17 | 2009-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing display device |
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| JP2002014628A (en) * | 2000-04-27 | 2002-01-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacturing method |
| JP2001326360A (en) * | 2000-05-18 | 2001-11-22 | Sharp Corp | Method for manufacturing active matrix substrate, active matrix substrate and method for manufacturing thin film field-effect transistor |
| GB0017471D0 (en) * | 2000-07-18 | 2000-08-30 | Koninkl Philips Electronics Nv | Thin film transistors and their manufacture |
| JP4896302B2 (en) * | 2001-04-09 | 2012-03-14 | 株式会社半導体エネルギー研究所 | Semiconductor device |
-
2004
- 2004-07-14 CN CN2009100096855A patent/CN101483180B/en active Active
- 2004-07-14 CN CNB2004100712144A patent/CN100474084C/en not_active Expired - Fee Related
-
2010
- 2010-06-15 JP JP2010135678A patent/JP2010250341A/en not_active Withdrawn
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2011
- 2011-05-23 JP JP2011114467A patent/JP5250662B2/en not_active Expired - Fee Related
-
2012
- 2012-11-21 JP JP2012255129A patent/JP5288666B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4409134A (en) * | 1980-03-03 | 1983-10-11 | Shunpei Yamazaki | Photoelectric conversion semiconductor and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011203746A (en) | 2011-10-13 |
| CN1577027A (en) | 2005-02-09 |
| JP5250662B2 (en) | 2013-07-31 |
| CN101483180B (en) | 2011-11-16 |
| JP2013047852A (en) | 2013-03-07 |
| CN101483180A (en) | 2009-07-15 |
| JP2010250341A (en) | 2010-11-04 |
| JP5288666B2 (en) | 2013-09-11 |
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