CN100472302C - 具有能平衡寄生电容的薄膜晶体管的器件 - Google Patents
具有能平衡寄生电容的薄膜晶体管的器件 Download PDFInfo
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- CN100472302C CN100472302C CNB2004800148925A CN200480014892A CN100472302C CN 100472302 C CN100472302 C CN 100472302C CN B2004800148925 A CNB2004800148925 A CN B2004800148925A CN 200480014892 A CN200480014892 A CN 200480014892A CN 100472302 C CN100472302 C CN 100472302C
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- thin film
- film transistor
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- 239000010409 thin film Substances 0.000 title claims abstract description 58
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 4
- 230000003071 parasitic effect Effects 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims 4
- 230000000295 complement effect Effects 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/456,794 | 2003-06-06 | ||
US10/456,794 US7791679B2 (en) | 2003-06-06 | 2003-06-06 | Alternative thin film transistors for liquid crystal displays |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100074625A Division CN101488527B (zh) | 2003-06-06 | 2004-06-04 | 具有双薄膜晶体管的器件以及像素 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1798999A CN1798999A (zh) | 2006-07-05 |
CN100472302C true CN100472302C (zh) | 2009-03-25 |
Family
ID=33490236
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800148925A Active CN100472302C (zh) | 2003-06-06 | 2004-06-04 | 具有能平衡寄生电容的薄膜晶体管的器件 |
CN2009100074625A Active CN101488527B (zh) | 2003-06-06 | 2004-06-04 | 具有双薄膜晶体管的器件以及像素 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100074625A Active CN101488527B (zh) | 2003-06-06 | 2004-06-04 | 具有双薄膜晶体管的器件以及像素 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7791679B2 (zh) |
KR (1) | KR101041089B1 (zh) |
CN (2) | CN100472302C (zh) |
TW (1) | TWI310861B (zh) |
WO (1) | WO2005001800A2 (zh) |
Families Citing this family (10)
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KR101019045B1 (ko) * | 2003-11-25 | 2011-03-04 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
US7268758B2 (en) | 2004-03-23 | 2007-09-11 | Clairvoyante, Inc | Transistor backplanes for liquid crystal displays comprising different sized subpixels |
US7787702B2 (en) | 2005-05-20 | 2010-08-31 | Samsung Electronics Co., Ltd. | Multiprimary color subpixel rendering with metameric filtering |
TWI352868B (en) * | 2006-11-03 | 2011-11-21 | Au Optronics Corp | Liquid crystal display pannel and active device ar |
US7567370B2 (en) * | 2007-07-26 | 2009-07-28 | Hewlett-Packard Development Company, L.P. | Color display having layer dependent spatial resolution and related method |
TWI363917B (en) | 2008-02-01 | 2012-05-11 | Au Optronics Corp | Thin film transistor array substrate |
US8792063B2 (en) * | 2011-09-20 | 2014-07-29 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Array substrate, liquid crystal display device and methods for manufacturing and repairing the array substrate |
CN102360146A (zh) * | 2011-10-14 | 2012-02-22 | 深圳市华星光电技术有限公司 | Tft-lcd阵列基板及其制造方法 |
TWI559046B (zh) * | 2012-03-30 | 2016-11-21 | 友達光電股份有限公司 | 畫素陣列及顯示面板 |
CN110825264B (zh) * | 2019-10-31 | 2022-10-11 | 厦门天马微电子有限公司 | 显示面板及驱动方法、触控显示装置 |
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-
2003
- 2003-06-06 US US10/456,794 patent/US7791679B2/en not_active Expired - Lifetime
-
2004
- 2004-06-04 KR KR1020057022472A patent/KR101041089B1/ko active IP Right Grant
- 2004-06-04 TW TW093116104A patent/TWI310861B/zh active
- 2004-06-04 WO PCT/US2004/018037 patent/WO2005001800A2/en active Application Filing
- 2004-06-04 CN CNB2004800148925A patent/CN100472302C/zh active Active
- 2004-06-04 CN CN2009100074625A patent/CN101488527B/zh active Active
-
2010
- 2010-01-26 US US12/694,241 patent/US20100127267A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20060015736A (ko) | 2006-02-20 |
WO2005001800A3 (en) | 2005-04-28 |
US20040246393A1 (en) | 2004-12-09 |
CN1798999A (zh) | 2006-07-05 |
TW200528897A (en) | 2005-09-01 |
US20100127267A1 (en) | 2010-05-27 |
CN101488527A (zh) | 2009-07-22 |
WO2005001800A2 (en) | 2005-01-06 |
TWI310861B (en) | 2009-06-11 |
US7791679B2 (en) | 2010-09-07 |
KR101041089B1 (ko) | 2011-06-13 |
CN101488527B (zh) | 2012-04-25 |
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