CN100469222C - 在电子元件上形成焊料区的方法和具有焊料区的电子元件 - Google Patents

在电子元件上形成焊料区的方法和具有焊料区的电子元件 Download PDF

Info

Publication number
CN100469222C
CN100469222C CNB2004100821391A CN200410082139A CN100469222C CN 100469222 C CN100469222 C CN 100469222C CN B2004100821391 A CNB2004100821391 A CN B2004100821391A CN 200410082139 A CN200410082139 A CN 200410082139A CN 100469222 C CN100469222 C CN 100469222C
Authority
CN
China
Prior art keywords
solder
solder cream
substrate
metallic particles
contact mat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100821391A
Other languages
English (en)
Other versions
CN1642392A (zh
Inventor
N·E·布雷斯
M·P·托本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of CN1642392A publication Critical patent/CN1642392A/zh
Application granted granted Critical
Publication of CN100469222C publication Critical patent/CN100469222C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/06—Solder feeding devices; Solder melting pans
    • B23K3/0607—Solder feeding devices
    • B23K3/0638—Solder feeding devices for viscous material feeding, e.g. solder paste feeding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3485—Applying solder paste, slurry or powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/05611—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05666—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/1147—Manufacturing methods using a lift-off mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0494—4th Group
    • H01L2924/04941—TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0242—Shape of an individual particle
    • H05K2201/0257—Nanoparticles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/043—Reflowing of solder coated conductors, not during connection of components, e.g. reflowing solder paste
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process

Abstract

公开了在电子元件上形成焊料区的方法。该方法包括：(a)提供具有一个或多个接触垫的基板；和(b)在该接触垫上施加焊料膏。该焊料膏包括载体和含有金属颗粒的金属成分。该焊料膏具有比该焊料膏熔化而且该熔体再次凝固后产生的固相线温度低的固相线温度。同时提供了可以通过本发明的方法形成的电子元件。可以在半导体工业中在半导体元件上形成互连凸起中得到具体的应用，例如使用凸起连接工艺将集成电路连接至模块电路或印制线路板。

Description

在电子元件上形成焊料区的方法和具有焊料区的电子元件
相关申请的相互引用
本申请要求2003年12月22日提交的美国临时申请No.60/532，264的根据35U.S.C§119(e)的权利，这里引用其全部内容作为参考。
技术领域
本发明涉及在电子元件上形成焊料区(solder area)的方法。同时，本发明涉及具有焊料区的电子元件。可以在半导体工业中在半导体器件上形成互连凸起(bump)中得到具体的应用，例如使用焊料凸起连接工艺将集成电路(IC)连接至模块电路，插入器(interposer)，或印制线路板(PWB)。
背景技术
半导体制造工业中目前集中于晶片级封装(WLB)。在晶片级封装中，在晶片上大量(en masse)制造IC互连，并且可以在切割晶片前在其上构建完整的IC模块。使用WLP可获得如下益处，例如增大的输入/输出(I/O)密度，提高的操作速度，增强的功率密度和热管理，减小的封装尺寸，和提高的制造成本效率。
在WLP中，可以在晶片上提供导电互连凸起。例如，最初的C4(“可控塌陷芯片连接”)工艺使用沉积在芯片的扁平接触垫区上的焊料凸起将一个或多个芯片连接至模块电路。芯片上的这些焊料凸起与模块电路上相应的接触垫相匹配。使该芯片和模块电路互相接触并加热使焊料熔化。这些互连凸起起到IC芯片和模块电路之间的电子和物理连接的作用。然后通过将焊料涂覆到模块电路上的其它接触垫，使该模块电路与PWB上的接触垫接触并加热该结构使焊料回流，从而典型将该模块电路附着到PWB。可选地，也可以使用引线连接代替焊料制作某些互连。
已经提出了在半导体器件上形成互连凸起的几种方法，例如电镀起凸，蒸发起凸，和凸起印刷。这些技术中，电镀起凸和蒸发起凸通常需要大的用于加工设备的资金投入。另一方面，凸起印刷是耗资(capitalintensive)较少的方法。在凸起印刷中，在基板上放置或形成带有图案的金属掩模。该掩模具有对应于有待在其上形成凸起的接触垫的开口。通过首先在该掩模上涂覆焊料膏然后使用例如刮板之类的工具将焊料膏挤入开口，从而使焊料膏填充掩模中的开口。移去掩模并加热焊料膏，从而由该焊料膏形成金属焊料凸起。
该金属焊料凸起应当能够在半导体元件的连接垫和模块电路之间制造可靠且稳定的电子连接。在凸起印刷中使用的焊料膏典型为金属颗粒和载体的组合，该载体可以包括例如溶剂，有机助熔剂，和活化剂。传统的焊料膏具有许多局限性。例如，载体成分的残渣在热处理之后通常会残留在焊料凸起中。这种残渣会对该接触的物理和/或电性能产生不利影响。为了最大程度上减小或阻止这种残渣，可能需要使用不适合该器件或基板的过高温度。
基于严格的连接层次对用于C4或其它晶片起凸工艺和随后将模块连接至PWB中的连接材料进行选择。例如，当元件通过焊接连至基板，随后的处理期间不应接近该焊料的固相线温度以便防止该焊接点的软化和劣化。在C4工艺中用于在晶片上形成凸起的典型焊料膏是高含铅的材料，其中该金属成分包括95wt％的铅和5wt％锡。由该组成得到的焊料凸起具有315℃的液相线温度。对于这种焊料凸起组成，在随后的处理期间必须使温度不接近315℃以便防止该焊接连接的软化和劣化。由于这个目的，典型使用具有183℃的液相线温度的共晶锡/铅0.37焊料膏。因此该连接层次严格限制了可使用的焊料材料的类型。将材料最初开始熔化的温度称为固相线温度，而将最后的金属最终熔入液相的温度称为液相线温度。
可用焊料材料的选择的进一步限制是基板的构成材料。例如，对于不能耐高温的基板如聚酯需要较低温度的焊接技术。为了在较低的焊接温度下产生可靠的互连，通常需要使用熔点较低的材料。例如，从70Sn/30Pb至70In/30Pb的改变可导致熔点温度从193℃降低到174℃。遗憾地是，这些熔点较低的焊料通常会在电子元件的工作期间发生疲劳或变形(如蠕变)，从而导致较低的可靠性。因此，通常需要使用耐高温的基板材料，例如陶瓷。因此希望具有可处理的焊料组合物，该组合物能够在较低的温度下制造电子连接而且可消除或减少疲劳和变形的问题。
焊接材料的使用的又一个限制涉及近期受环境因素驱动的无铅的要求，这加大了消除焊料起凸和金属化中所用的含铅材料的要求。遗憾的是，含铅材料最好的替代材料相对共晶锡-铅具有更高的固相线温度。目前，考虑使用Sn/Ag3.0/Cu0.5焊料膏作为共晶Sn/Pb替代材料。然而遗憾的是，Sn/Ag3.0/Cu0.5的固相线温度约为217℃，这比共晶Sn/Pb的固相线温度高34℃。这种合金所需要的增加的热激增(excursion)会导致电子元件的过早失效。因此，存在寻找共晶Sn/Pb的合适替代材料的需求，该替代材料具有相对低的固相线温度。
在互连凸起的形成中所使用的传统的焊料膏包含具有微米范围直径的金属颗粒。Sakuyama的美国专利No.6,630，742 B2公开了颗粒含量不超过10wt％的焊料粉末，该颗粒的直径大于掩模的厚度而不超过该厚度的1.5倍，且公开了作为范例的5至20μm的直径。据称这减小了如下风险：当掩模用焊料涂覆并用刮板在掩模上前后移动时，填充开口的焊料膏会被擦去；和当去除掩模时附着在该金属掩模开口内壁上的焊料膏会被带走。该′742专利进一步公开了如果减小具有20μm或更小颗粒直径的焊料粉的比例，可自动改善与其制备相联系的问题，例如劳动强度大，低产量和高成本。′742专利提出了具有低比例的小颗粒直径的焊料粉的另一个优点，该焊料膏对氧化不敏感从而导致该焊料膏具有较长的寿命。
因此本领域中对于在电子元件上形成焊料区的方法存在持续的需求，例如用于晶片级封装的半导体元件上的互连凸起。本领域中还存在对可以通过这样的方法形成的电子元件的需求。该方法和元件能够阻止或显著改善上面所述关于本领域情形的问题中的一个或多个。
发明内容
依照第一个方面，本发明提供了在电子元件上形成焊料区的方法。该方法包括：(a)提供具有一个或多个接触垫的基板；和(b)在该接触垫上施加焊料膏。该焊料膏包含载体和含有金属颗粒的金属成分。该焊料膏具有比该焊料膏熔化且该熔体再次凝固后所得的固相线温度低的固相线温度。
依照另一个方面，本发明提供了电子元件。该电子元件包括：(a)具有一个或多个接触垫的基板；和(b)该接触垫上的焊料膏。该焊料膏包含载体和含有金属颗粒的金属成分。该焊料膏具有比该焊料膏熔化且该熔体再次凝固后所得的固相线温度低的固相线温度。
参照下列描述，权利要求，和相关的附图，本领域中的技术人员将清楚的认识到本发明的其它特征和优点。
附图说明
本发明将参照下列附图进行讨论，其中相似的参照数字代表相似的部件，且其中：
图1(a)-(f)依照本发明以横截面说明在其不同形成阶段电子元件上以互连凸起形式的焊料区。
图2(a)-(b)依照本发明的另一个方面以横截面说明在其不同的形成阶段通过将具有互连凸起形式的焊料区的电子元件连接至基板形成的电子元件。
图3(a)-(f)依照本发明的另一个方面以横截面说明其不同的形成阶段电子元件上的焊料区。
图4(a)-(b)依照本发明的另一个方面以横截面说明在其不同形成阶段将具有焊料区的电子元件连接至基板的连接。
具体实施方式
现在将参照图1(a)-(f)对本发明的方法进行描述，该图说明了根据本发明第一个方面的焊料区形成过程的典型工艺流程图。正如这里所使用的，术语“一个”是指一个或多个，除非另外明确说明。术语纳米颗粒是指具有50nm或更小直径的颗粒。术语“金属”是指单组分金属，金属混合物，金属合金，和金属间化合物。
本发明的方法包括在电子元件上形成焊料区。本发明中所用的焊料是由焊料膏形成的，该焊料膏包含金属颗粒形式的金属成分和载体成分。对金属颗粒的尺寸进行选择以便使焊料膏具有比该焊料膏熔化且该熔体再次凝固后所得的固相线温度低的固相线温度。
本发明是基于这样的原理：传统焊料膏中所使用的较大尺寸的颗粒具有与块状金属相同的固相线温度，而金属纳米颗粒具有相比更低的固相线温度。可以通过将颗粒尺寸逐渐(incremental)减小到阈值以下，从而逐渐降低该金属的固相线温度。一旦熔化并凝固，所得金属便具有该再次凝固的熔体/块体材料的固相线温度。当包含在焊料膏中时，相比随后的熔化和凝固材料，该纳米颗粒可以以相同的方式有效降低该焊料膏的固相线温度。因此，可以在给定的温度下形成焊料区，在随后的在相同(或甚至更高)的温度下的热处理过程中其不会发生回流(reflow)。这在电子元件的连接层次，以及焊料膏和其它器件材料的选择中提供了相当大的灵活性。
此外，当在例如助熔剂中使用有机成分时，所用的金属颗粒可减少或消除焊料膏回流后可能残留下的有机残渣。虽然不希望受任何具体理论的限制，但认为该焊料膏中金属颗粒相对高的表面积会提高该有机材料的催化分解速率。
然而该金属颗粒的有效尺寸将取决于例如具体的金属和所需的焊料膏的固相线温度，有用的颗粒通常在纳米尺寸范围内。可以通过许多已知的技术例如化学气相沉积(CVD)，物理气相沉积(PVD)如溅射，电解沉积，激光分解，电孤加热，高温火焰或等离子喷涂，气溶胶燃烧，静电喷涂，模板电沉积(Templated electrodeposition)，沉淀，浓缩，研磨等来制造纳米颗粒。例如国际公开No.WO96/06700公开了使用如激光，电弧，火焰，或等离子的能源加热和分解起始材料，从起始材料形成纳米颗粒的技术，这里将其全部引用作为参考。
在本发明中有用的金属颗粒包括，例如锡(Sn)，铅(Pb)，银(Ag)，铋(Bi)，铟(In)，锑(Sb)，金(Au)，镍(Ni)，铜(Cu)，铝(Al)，钯(Pb)，铂(Pt)，锌(Zn)，锗(Ge)，镧系元素，它们的组合，和它们的合金。其中，典型为Sn，Pb，Ag，Bi，In，Au，Cu，它们的组合，和它们的合金，例如锡和锡合金，例如Sn-Pb，Sn-Ag，Sn-Cu，Sn-Ag-Cu，Sn-Bi，Sn-Ag-Bi，Sn-Au，和Sn-In。更具体地，Sn-Pb37，Sn-Pb95，Sn/Ag3.5，Sn/Ag3.0/Cu0.5(wt％基于金属成分)等在本发明中得到了使用。
可以对焊料膏中金属颗粒的尺寸和尺寸分布进行选择以提供所需的固相线温度，该温度将取决于例如颗粒的类型。例如，可以对颗粒的尺寸和分布进行选择以便为该焊料膏提供比焊料膏熔化而且该熔体再次凝固后所得的固相线温度低3℃或更多的固相线温度，例如低5℃或更多，低10℃或更多，低50℃或更多，低100℃或更多，低200℃或更多，低400℃或更多，或低500℃或更多。
该金属颗粒在焊料膏中的存在数量基于该焊料膏典型大于50wt％，例如大于85wt％。如上文所述，可有效降低金属颗粒和所得焊料膏的固相线温度的颗粒尺寸将取决于颗粒材料的具体类型。通常，如果该颗粒的50％或更多，例如75％或更多，90％或更多，或99％或更多具有50nm或更小，例如30nm或更小，20nm或更小，或10nm或更小的直径，将充分满足要求。通常，该金属和/或金属合金颗粒的平均直径为50nm或更小、例如30nm或更小，20nm或更小，或者10nm或更小。典型地，该金属颗粒的尺寸和尺寸分布可有效的允许该焊料膏在比该凝固熔体的固相线温度低的温度下熔化。然而，如果一部分颗粒是尺寸较大且不熔化的颗粒也可以满足要求，假定所得焊料区可以在电子元件中提供足够可靠的电子连接。一部分较大的颗粒可能会溶解到该焊料膏的熔化部分中。
该载体可以包含一种或多种成分，例如一种或多种溶剂，助熔剂，和活化剂。焊料膏中该载体的存在数量典型为1至20wt％，例如5至15wt％。
在载体中典型存在溶剂以便调节该焊料膏的粘度，该粘度典型为100kcps(千厘泊)至2000kcps，例如500至1500kcps或750至1000kcps。适合的溶剂包括，例如，有机溶剂如低分子量的醇类例如乙醇，酮类例如甲基乙基酮，酯类例如乙酸乙酯，和烃类例如煤油。该溶剂在载体中的存在数量典型为10至50wt％，例如30至40wt％。
可以在载体中进一步包含助熔剂以便增强焊料膏与基板的粘结。适合的助熔剂包括，例如一种或多种松香如聚合松香，氢化松香，和酯化松香，脂肪酸，甘油，或软蜡。当使用时，助熔剂在载体中的存在数量典型为25至80wt％。
当加热焊料膏时，活化剂有助于除去接触垫表面上或金属颗粒表面上所形成的氧化物。适合的活化剂在本领域内是众所周知的，且包括例如一种或多种有机酸如丁二酸或己二酸和/或有机胺如尿素，其它金属螯合剂例如EDTA，卤化物例如氯化铵或盐酸。当使用时，活化剂在载体中的存在数量典型为0.5至10wt％，例如1至5wt％。
可以在焊料膏中选择使用另外的添加剂，例如触变剂，如硬化蓖麻油，羟基硬脂酸，或多元醇(polyhydridic alcohols)。该可选添加剂在焊料膏中的存在数量典型为0至5wt％，例如0.5至2.0wt％。
为减小形成的电子元件被腐蚀的可能性和相关的问题，该焊料膏可以基本上不含卤素和碱金属原子。典型地，卤素和碱金属原子在该焊料中的含量小于100ppm，例如小于1ppm。
可以通过将金属成分与载体成分混合，并包含任何所需可选成分来形成依照本发明的焊料膏。可以首先混合非金属成分以便提供更均匀的分散体。
依照本发明的一个方面，图1(a)-(f)以横载面说明在其不同形成阶段电子元件上以互连凸起形式的焊料区。根据图1(a)，提供了电子元件的基板2。该电子元件可以是例如半导体晶片，如单晶硅晶片，硅-蓝宝石(SOS)基板，或硅-绝缘体(SOI)基板，单个(singulated)半导体芯片例如IC芯片，拥有一个或多个半导体芯片的模块电路，印制线路板，或它们的组合。
该基板在其表面上具有一个或多个接触垫4，且典型为多个接触垫4。接触垫4是一般通过物理气相沉积(PVD)例如溅射或蒸发或电镀，由一层或多层金属，复合金属或金属合金形成的。典型的接触垫材料包括而不限于，铝，铜，氮化钛，铬，锡，镍，和它们的组合或合金。在接触垫4上典型形成钝化层，并通过典型为干法刻蚀的刻蚀工艺在其中形成延伸至接触垫的开口。该钝化层典型为绝缘材料，例如氮化硅，氮氧化硅，或氧化硅，例如磷硅酸盐玻璃(PSG)。可以通过化学气相沉积(CVD)沉积这样的材料，例如等离子增强CVD(PECVD)。接触垫4充当待形成的焊料区的粘附层和电接触基底。该接触垫典型为正方形或矩形，虽然也可以使用其它形状。
如本领域中所熟知的，将具有对应于接触垫的开口的图案化掩模置于基板的表面附近或者可以在该基板的表面形成该图案化掩模。该图案化掩模可以是，例如在其中形成有对应于接触垫的开口的金属板(未显示出)，并对准放置在与基板表面接触或与基板表面成近似接触(nearcontact)。可选地，可以在基板表面上形成该掩模，如图1(b)和(c)所示。在这个情形中，可以在基板2的表面上涂覆例如光致抗蚀剂材料的掩模材料，例如，购自Shipley Company，L.L.C.，Marlborough，MA的Shipley BPRTM100抗蚀剂。通过标准的光刻曝光和显影技术在光致抗蚀剂层6上形成图案从而形成掩模6’。可选在基板表面上形成掩模，例如通过涂覆和刻蚀电介质层，例如氧化硅，氮化硅，或氮氧化硅。
该掩模的开口典型延伸超过接触垫4的边缘，以便允许焊料涂覆在接触垫上以及超出接触垫的外围区域。该掩模开口可以是多种的几何形状，但典型为与接触垫4相同的形状。非限制性的，掩模6’的厚度应足够厚以便允许将焊料膏涂覆至所需的厚度。
然后将上述的焊料膏8涂覆在接触垫2上。虽然该厚度将取决于具体的焊料膏和所涉及的几何形状，但典型在接触垫4上涂覆例如50μm至150μm厚度，或200μm至400μm厚度的焊料膏。如图1(d)所示，例如可以通过在掩模6’的表面上沉积焊料膏，然后使用例如刮板10的工具将焊料膏从掩模表面移过实现该操作。以这种方式，将焊料膏移入如图1(d)和(e)中所示的焊料膏区域12的接触垫之上的掩模的孔中。典型但并非必须除去掩模6’然后加热基板2以便熔化焊料膏，从而形成焊料凸起12’，如图1(f)所示。可以在回流炉中并且在该焊料膏熔化并流动成大致为缺顶球形的温度下进行加热，由此形成如图1(f)所示的焊料凸起12’。适合的加热技术在本领域中是众所周知的，且包括例如红外，传导，和对流技术，以及它们的组合。该回流的互连凸起通常与该接触垫结构的边缘是同延的(coextensive)。可以在惰性气氛或在空气中进行该热处理步骤，具体的处理温度和时间取决于焊料膏的具体组成和其中金属颗粒的尺寸。
图2(a)-(b)以横截面说明通过将上述具有互连凸起12’形式的焊料区的电子元件连接至具有对应于焊料凸起12’的接触垫16的基板14而形成的电子元件13。这种连接技术适用于将两个电子元件连接起来，例如将IC直接连至器件封装，模块电路或PWB，或将模块电路或器件封装连接至PWB。可以参照接触垫4由上面所述的材料构建元件14的接触垫16。接触垫16通常为Al，Cu，Ni，Pd，或Au。参照图2(a)，将两个电子元件大体对准并互相接触以便使一个电子元件的焊料区12’与元件14的接触垫16大致对准并接触。然后，将这些元件加热到能够熔化焊料凸起12’的温度，由此形成与接触垫16的连接。可以使用与上面所述关于形成焊料凸起12’中所用焊料膏的加热相同的技术进行该加热。
依照本发明的另一个方面，图3(a)-(f)以横截面说明其不同的形成阶段电子元件上的焊料区。本发明的这个方面适用于例如将两个电子元件连接起来，其中在熔化纳米颗粒焊料膏之前使两个元件互相接触。上述关于图1(a)-(e)的描述大体上适用于图3(a)-(e)。在本发明的这个方面的益处在于：使用比在形成焊料凸起中所用的焊料膏厚度更小的焊料膏厚度。例如，可以在接触垫4上涂覆焊料膏至例如1至50μm的厚度，或10至20μm的厚度。另外，希望将焊料区限制在所示的接触垫中。然后除去掩模6’，如图3(f)所示，由此形成了具有焊料区12的电子元件，该焊料区12具有在接触垫4上形成的纳米颗粒焊料膏的形式。
图4(a)-(b)以横截面说明通过将上述具有纳米颗粒焊料膏12形式的焊料区的电子元件连接至具有对应于焊料凸起12的接触垫16的基板14而形成的电子元件13。上面关于图2(a)-(b)的描述大体上适用，除非另外说明。在这个实施方案中，可以参照接触垫4由上面所述的材料构建元件14的接触垫16，典型为Al，Cu，Ni，Pd，或Au。参照图4(a)，将两个电子元件大体对准并互相接触，以便使一个电子元件的焊料区12与元件14的接触垫16大致对准并接触。然后，将这些元件加热到能够熔化焊料膏12的温度。当该熔体凝固时，在两个元件之间形成了具有比起始焊料膏高的固相线温度的连接。可以使用与上面参照图1描述的关于形成焊料凸起中所用的焊料膏加热相同的技术进行该加热。应当清楚的是，在使基板接触之前可以在任一个或两个基板的接触垫上形成该焊料膏。
下面的预示(prophetic)实施例的意图是进一步对本发明进行说明，而并非用来在任何方面对本发明的范围进行限制。
实施例1-10
如下制备依照本发明的纳米颗粒焊料膏。由0.92g苯甲酸和20ml二乙醚制备0.25M的苯甲酸溶液。将86g焊料合金纳米颗粒加入该溶液漫泡一小时并不时进行搅拌。对该粉末浆料进行冲洗和干燥。由50wt％的松香，41wt％的乙二醇溶剂，4wt％％的丁二酸，和5wt％的蓖麻油制备松香基助熔剂。将该助熔剂加入该金属颗粒以便形成具有88wt％金属的膏剂，如表1所示。使用所得焊料膏按下面所述在电子器件上形成焊料区。
提供在其表面形成有IC芯片的半导体晶片。每个IC芯片具有64个间距为100μm的接触垫(每个边为200μm)。将金属掩模置于与该表面接触，该掩模具有露出接触垫且直径为150μm的开口。使用刮板将焊料膏涂在掩模上，使焊料膏填充在掩模的开口中。将该晶片加热到表1中所示的预期固相线温度(Tsol)，从而熔化该焊料并在接触垫上形成焊料凸起形式的焊料区。表1中同时示出了Tsol与熔化并凝固后该焊料膏的预期固相线温度之间的差异(Tsol-Tbulk)。可以看出，对于给定的材料，通过使用纳米颗粒焊料膏可以获得预期固相线温度的显著降低。此外，通过调节金属颗粒的尺寸可以控制这种降低的程度。
表1
Figure C200410082139D00141
虽然根据具体的实施方案对本发明进行了详细的描述，本领域的技术人员将明白，使用等同条件可以做出多种改变和修改而不背离权利要求的范围。

Claims (10)

1.在电子元件上形成焊料区的方法，该方法包括:
(a)提供包含一个或多个接触垫的基板；和
(b)在该接触垫上施加焊料膏，该焊料膏包含载体和含有金属颗粒的金属成分，按所述焊料膏的重量计，所述金属颗粒的量大于50重量％，并且50％或更多的金属颗粒具有50nm或更小的直径；
其中该焊料膏具有比该焊料膏熔化所得的熔体再次凝固后所得的产物的固相线温度低的固相线温度。
2.权利要求1所述的方法，其中该金属颗粒的平均直径是30nm或更小。
3.权利要求1或2所述的方法，该方法进一步包括:
(c)在能够熔化该焊料膏的温度下加热焊料膏；和
(d)使加热所得的熔体凝固。
4.权利要求1或2所述的方法，其中该基板包含多个接触垫，以及该接触垫上的多个相应的焊料区。
5.如权利要求1所述的方法，其特征在于金属成分的金属颗粒全部是由相同材料组成的。
6.权利要求1或2所述的方法，该方法进一步包括:
(c)提供包含一个或多个接触垫的第二个基板，该接触垫对应于第一个基板的一个或多个接触垫；和
(d)使第一和第二个基板互相接触，其中第二个基板的接触垫与第一个基板的接触垫对准。
7.权利要求6所述的方法，其中第二个基板的接触垫与焊料膏接触，并进一步包括:
(e)在能够熔化该焊料膏的温度下加热焊料膏。
8.一种电子元件，包括:
(a)包含一个或多个接触垫的基板；和.
(b)该接触垫之上的焊料膏，该焊料膏包含载体和含有金属颗粒的金属成分，按所述焊料膏的重量计，所述金属颗粒的量大于50重量％，并且50％或更多的金属颗粒具有50nm或更小的直径；
其中该焊料膏具有比该焊料膏熔化所得的熔体再次凝固后所得的产物的固相线温度低的固相线温度。
9.权利要求8所述的电子元件，其中该基板包含多个接触垫，以及该接触垫之上的相应焊料凸起。
10.如权利要求8所述的电子元件，其特征在于金属成分的金属颗粒全部是由相同材料组成的。
CNB2004100821391A 2003-12-22 2004-12-21 在电子元件上形成焊料区的方法和具有焊料区的电子元件 Expired - Fee Related CN100469222C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53226403P 2003-12-22 2003-12-22
US60/532,264 2003-12-22

Publications (2)

Publication Number Publication Date
CN1642392A CN1642392A (zh) 2005-07-20
CN100469222C true CN100469222C (zh) 2009-03-11

Family

ID=34794223

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100821391A Expired - Fee Related CN100469222C (zh) 2003-12-22 2004-12-21 在电子元件上形成焊料区的方法和具有焊料区的电子元件

Country Status (5)

Country Link
US (1) US20050133572A1 (zh)
JP (1) JP2005183904A (zh)
KR (1) KR20050063689A (zh)
CN (1) CN100469222C (zh)
TW (1) TWI254392B (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8002905B2 (en) * 2003-06-25 2011-08-23 Behr Gmbh & Co. Kg Fluxing agent for soldering metal components
JP4069867B2 (ja) * 2004-01-05 2008-04-02 セイコーエプソン株式会社 部材の接合方法
US20060196579A1 (en) * 2005-03-07 2006-09-07 Skipor Andrew F High energy soldering composition and method of soldering
KR100610273B1 (ko) * 2005-04-19 2006-08-09 삼성전기주식회사 플립칩 방법
US7326636B2 (en) * 2005-05-24 2008-02-05 Agilent Technologies, Inc. Method and circuit structure employing a photo-imaged solder mask
US7615476B2 (en) * 2005-06-30 2009-11-10 Intel Corporation Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages
KR100719905B1 (ko) * 2005-12-29 2007-05-18 삼성전자주식회사 Ｓｎ-Ｂｉ계 솔더 합금 및 이를 이용한 반도체 소자
KR100796983B1 (ko) 2006-11-21 2008-01-22 삼성전기주식회사 인쇄회로기판 및 그 제조방법
JP5016975B2 (ja) * 2007-03-05 2012-09-05 株式会社東芝 半導体装置の製造方法
KR100834515B1 (ko) 2007-03-07 2008-06-02 삼성전기주식회사 금속 나노입자 에어로졸을 이용한 포토레지스트 적층기판의형성방법, 절연기판의 도금방법, 회로기판의 금속층의표면처리방법 및 적층 세라믹 콘덴서의 제조방법
US20090065555A1 (en) * 2007-09-12 2009-03-12 Stephen Leslie Buchwalter Electrical interconnect forming method
US20090108442A1 (en) * 2007-10-25 2009-04-30 International Business Machines Corporation Self-assembled stress relief interface
KR101009110B1 (ko) * 2008-11-12 2011-01-18 삼성전기주식회사 매립 솔더 범프를 갖는 인쇄회로기판 및 그 제조방법
JP5238598B2 (ja) * 2009-04-30 2013-07-17 昭和電工株式会社 回路基板の製造方法
KR101077359B1 (ko) 2009-09-23 2011-10-26 삼성전기주식회사 방열회로기판 및 그 제조방법
US8507325B2 (en) * 2010-01-28 2013-08-13 International Business Machines Corporation Co-axial restraint for connectors within flip-chip packages
JP5658898B2 (ja) * 2010-03-29 2015-01-28 株式会社日立製作所 ウェハ接合半導体装置の製造方法
KR101740483B1 (ko) * 2011-05-02 2017-06-08 삼성전자 주식회사 고정 부재 및 할로겐-프리 패키지간 연결부를 포함하는 적층 패키지
JP2012019244A (ja) * 2011-10-24 2012-01-26 Fujitsu Ltd 半導体装置、回路配線基板及び半導体装置の製造方法
KR101940237B1 (ko) * 2012-06-14 2019-01-18 한국전자통신연구원 미세 피치 ｐｃｂ 기판에 솔더 범프 형성 방법 및 이를 이용한 반도체 소자의 플립 칩 본딩 방법
CN103028869A (zh) * 2012-12-13 2013-04-10 深圳市唯特偶新材料股份有限公司 一种低银高润湿焊锡膏及其制备方法
US9617189B2 (en) * 2013-08-30 2017-04-11 Ut-Battelle, Llc Apparatus and method for materials processing utilizing a rotating magnetic field
US10668573B2 (en) * 2015-01-09 2020-06-02 University Of Massachusetts Preparation and application of Pb-free nanosolder
CN104979319B (zh) * 2015-06-16 2018-11-16 江苏师范大学 一种实现3d封装芯片互连的记忆焊点
US10886250B2 (en) 2015-07-10 2021-01-05 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
CN105177387B (zh) * 2015-08-06 2017-03-15 江苏师范大学 一种3D芯片堆叠的含Eu、纳米Au的互连材料
CN105161483A (zh) * 2015-08-06 2015-12-16 江苏师范大学 一种3D芯片堆叠的含Yb、纳米Cu的互连材料
US10597767B2 (en) * 2016-02-22 2020-03-24 Roswell Biotechnologies, Inc. Nanoparticle fabrication
US10265806B2 (en) * 2016-10-04 2019-04-23 General Electric Company System and method for sealing internal channels defined in a component
TWI822659B (zh) * 2016-10-27 2023-11-21 美商艾德亞半導體科技有限責任公司 用於低溫接合的結構和方法
KR102409913B1 (ko) * 2017-12-06 2022-06-16 삼성전자주식회사 솔더 리플로우 장치 및 이를 이용한 전자 장치의 제조 방법
JP7452419B2 (ja) * 2018-06-26 2024-03-19 株式会社レゾナック はんだ粒子及びはんだ粒子の製造方法
WO2020004510A1 (ja) * 2018-06-26 2020-01-02 日立化成株式会社 異方性導電フィルム及びその製造方法並びに接続構造体の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5346118A (en) * 1993-09-28 1994-09-13 At&T Bell Laboratories Surface mount solder assembly of leadless integrated circuit packages to substrates
US5666643A (en) * 1995-02-23 1997-09-09 General Electric Company High temperature braze material
CN1389326A (zh) * 2002-07-24 2003-01-08 北京工业大学 纳米颗粒增强的锡铅基复合钎料及其制备方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4557767A (en) * 1983-10-31 1985-12-10 Scm Corporation Fusible powdered metal paste
JPS63238994A (ja) * 1987-03-25 1988-10-05 Tdk Corp 半田組成物
US5141568A (en) * 1990-05-15 1992-08-25 Hughes Aircraft Company Water-soluble soldering paste
US5294242A (en) * 1991-09-30 1994-03-15 Air Products And Chemicals Method for making metal powders
US5382300A (en) * 1994-03-22 1995-01-17 At&T Corp. Solder paste mixture
EP0854768A1 (en) * 1995-10-06 1998-07-29 Brown University Research Foundation Soldering methods and compositions
US6205264B1 (en) * 1998-04-14 2001-03-20 Lucent Technologies Inc. Optical assembly with improved dimensional stability
US6136689A (en) * 1998-08-14 2000-10-24 Micron Technology, Inc. Method of forming a micro solder ball for use in C4 bonding process
JP4564113B2 (ja) * 1998-11-30 2010-10-20 株式会社東芝 微粒子膜形成方法
GB9929521D0 (en) * 1999-12-15 2000-02-09 Secr Defence Bonded products and methods of fabrication therefor
JP3423930B2 (ja) * 1999-12-27 2003-07-07 富士通株式会社 バンプ形成方法、電子部品、および半田ペースト
WO2001089757A1 (en) * 2000-05-24 2001-11-29 Corbin Stephen F Variable melting point solders and brazes
US6932519B2 (en) * 2000-11-16 2005-08-23 Shipley Company, L.L.C. Optical device package
US6883977B2 (en) * 2000-12-14 2005-04-26 Shipley Company, L.L.C. Optical device package for flip-chip mounting
JP2003166007A (ja) * 2001-03-28 2003-06-13 Tamura Kaken Co Ltd 金属微粒子の製造方法、金属微粒子含有物及びソルダーペースト組成物
JP2002359426A (ja) * 2001-06-01 2002-12-13 Hitachi Ltd 光モジュール及び光通信システム
JP2003059958A (ja) * 2001-08-15 2003-02-28 Sony Corp マイクロバンプの形成方法
US20030146019A1 (en) * 2001-11-22 2003-08-07 Hiroyuki Hirai Board and ink used for forming conductive pattern, and method using thereof
US7416108B2 (en) * 2002-01-24 2008-08-26 Siemens Power Generation, Inc. High strength diffusion brazing utilizing nano-powders
WO2004103043A1 (ja) * 2003-05-16 2004-11-25 Harima Chemicals, Inc. 銅微粒子焼結体型の微細形状導電体の形成方法、該方法を応用した銅微細配線ならびに銅薄膜の形成方法
US7017795B2 (en) * 2003-11-03 2006-03-28 Indium Corporation Of America Solder pastes for providing high elasticity, low rigidity solder joints
US7331500B2 (en) * 2004-06-25 2008-02-19 Intel Corporation Solder bumps formation using solder paste with shape retaining attribute

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5346118A (en) * 1993-09-28 1994-09-13 At&T Bell Laboratories Surface mount solder assembly of leadless integrated circuit packages to substrates
US5666643A (en) * 1995-02-23 1997-09-09 General Electric Company High temperature braze material
CN1389326A (zh) * 2002-07-24 2003-01-08 北京工业大学 纳米颗粒增强的锡铅基复合钎料及其制备方法

Also Published As

Publication number Publication date
KR20050063689A (ko) 2005-06-28
US20050133572A1 (en) 2005-06-23
JP2005183904A (ja) 2005-07-07
TWI254392B (en) 2006-05-01
CN1642392A (zh) 2005-07-20
TW200527566A (en) 2005-08-16

Similar Documents

Publication Publication Date Title
CN100469222C (zh) 在电子元件上形成焊料区的方法和具有焊料区的电子元件
CN100471364C (zh) 电子器件和形成电子器件的方法
EP0430240B1 (en) Method of mounting an electric part on a circuit board
JP3476464B2 (ja) すずビスマス半田ペーストと，このペーストを利用して，高温特性の改良された接続を形成する方法
CN101147249B (zh) 电子部件安装方法和电子电路装置
KR101757127B1 (ko) 땜납 분말의 제조 방법 및 이 분말을 사용한 땜납용 페이스트
JP3556922B2 (ja) バンプ形成方法
JP5964597B2 (ja) 異方性導電性ペーストおよびそれを用いた電子部品の接続方法
KR950009989A (ko) 솔더링 공정 및 솔더 범프 형성 공정
JP2010120089A (ja) 鉛フリーソルダペースト
KR20030040138A (ko) 반도체 장치의 제조 방법
CA2134377C (en) Solder paste mixture
JP6234118B2 (ja) はんだ組成物
JP5902009B2 (ja) はんだバンプの形成方法
WO2005091354A1 (ja) はんだ組成物及びこれを用いたバンプ形成方法
CN101081462A (zh) 钎焊膏
JP2012024834A (ja) はんだ材料とその作製方法、及びこれを用いた半導体装置の製造方法
JP4259445B2 (ja) 半田ペーストおよび半田接合方法
JPH07118498B2 (ja) 電気的接合部
JP6428409B2 (ja) ハンダ粉末及びこの粉末を用いたハンダ用ペースト
JP4367630B2 (ja) バンプ形成方法
JP6267427B2 (ja) はんだ付け方法及び実装基板
JP4685081B2 (ja) 電子部品製造方法
JP2987227B2 (ja) 低融点ハンダ析出用組成物及び低融点ハンダプリコート回路基板の製造方法
JP2795535B2 (ja) 回路基板への電子部品実装方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090311

Termination date: 20101221