CN100468626C - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the same Download PDFInfo
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- CN100468626C CN100468626C CNB2006100824204A CN200610082420A CN100468626C CN 100468626 C CN100468626 C CN 100468626C CN B2006100824204 A CNB2006100824204 A CN B2006100824204A CN 200610082420 A CN200610082420 A CN 200610082420A CN 100468626 C CN100468626 C CN 100468626C
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Abstract
An operating semiconductor layer is formed in such a manner that amorphous silicon layer is formed to be shaped so that it has a wide region and a narrow region and the narrow region is connected to the wide region at a position asymmetric to the wide region, and the amorphous silicon layer is crystallized by scanning a CW laser beam from the wide region toward the narrow region in a state that a polycrystalline silicon layer as a heat-retaining layer encloses the narrow region from a side face through the silicon oxide layer.
Description
The application is to be the dividing an application of Chinese patent ZL02141410.6 on August 30th, 2002 applying date.
The application based on and require the Japanese patent application No.2001-262160 that submits in August 30 calendar year 2001 and the priority of the Japanese patent application No.2002-180425 that submits on June 20th, 2002, its content is contained in this for your guidance.
Technical field
The present invention relates to a kind of film-type semiconductor device with work semiconductor layer with and manufacture method.Specifically, it preferably is applied to a kind of thin-film transistor, and wherein source/drain is formed on this work semiconductor layer (operating semiconductor), and grid is formed on the channel region.
Background technology
Thin-film transistor (TFT) is formed on the extremely thin fine work semiconductor layer that is installed on large-screen lc display floater or the like.The display floater that needs bigger area recently.
For TFT work semiconductor layer, studied the use polysilicon layer, because having higher carrier mobility and compare with amorphous si-layer (a-Si layer), it has thermal stability.At present, method hereinafter described is used to use polysilicon layer to form the method for work semiconductor layer.
(1) adopted by amorphous si-layer being heated about 600 ℃ and about 1100 ℃ and formed the method for polysilicon layer to carry out crystallization.This method forms nucleus at the commitment of heat treated, and carries out crystallization by the growth of this nucleus.
(2) make the amorphous si-layer fusing by increasing laser energy, when it cools off, form polysilicon layer by crystallization.
(3) this polysilicon layer directly directly forms under 600 ℃ or higher temperature by chemical vapour phase growth method or physical evaporation method.
At this, use the method that on glass substrate, forms thin film semiconductive layer to be example, the shortcoming of prior art is discussed.Because glass is used for substrate material, so the temperature of substrate is limited to 600 ℃ or littler.
Need 600 ℃ heat treatment temperature at the growing method described in (1), this is corresponding to glass heat treatment at high temperature, and makes this glass deformation.In addition, stacking fault (stackingfault) and twin (twin crystal) are present in the crystal of this growth in a large number, and this can not expect to obtain to form to have good crystalline polysilicon layer.
Utilize the growing method described in (3), form column crystal, because its less crystal grain diameter so its crystallinity deficiency, and can not form crystal with high mobility.
For the method for the use laser annealing described in (2), can use and the laser that do not increase substrate temperature only limits to excimer laser.When using excimer laser, can obtain high-quality polysilicon layer, because this crystal is grown mutually by fusing.It is very narrow that but its shortcoming is to be used to obtain the energy range of this high-quality polysilicon layer.In addition, when using excimer laser, have high-temperature although the thin film silicon zone only on superficial layer is melted, the temperature of this glass itself is lower.Correspondingly, the cooling rate of silicon fusing is very fast.
Therefore, from fusing, grow under the present supercool condition, and form many nucleus, make crystal grain diameter less.Usually, the scope of crystal grain diameter is approximately 300 nanometers between about 600 nanometers.When using excimer laser to form the film polycrystalline silicon layer, it guarantees best crystallinity, and the mobility of this thin-film transistor is approximately 200cm
2/ Vs, it is much smaller than 600cm
2The mobility of the monocrystalline silicon of/Vs.This be because the less and grain boundary part of this crystal grain diameter as scattering object with strong charge carrier.
As indicated above, even this work semiconductor layer is made of polysilicon layer, it has important disadvantages usually, can not limit because the grain boundary causes the reduction of mobility, and can not guarantee high-quality work semiconductor layer.
Summary of the invention
An object of the present invention is to provide a kind of film-type semiconductor device, it forms a work semiconductor layer by the thin film semiconductive layer by the insignificant little influence with grain boundary and realizes high mobility, and provide a kind of can be easily and make the method, semi-conductor device manufacturing method of semiconductor device for certain.
The invention provides following embodiment and solve above-mentioned shortcoming.
The present invention relates to a kind of film-type semiconductor device that on substrate, has the work semiconductor layer, with and manufacture method.
In the semiconductor device of the present invention, this work semiconductor layer is made wide zone and narrow zone interconnect by shaping.Wide zone is in flow pattern (flow pattern) state with big crystal grain, and the direction of the grain boundary in above-mentioned flow pattern is not formed and parallels with the longitudinal direction in narrow zone, and this narrow zone is in monocrystalline state basically.
The method that is used to make semiconductor device of the present invention comprises the steps: to form on this substrate will be as a semiconductor layer of work semiconductor layer; Handle the semiconductor layer that this wants shaping, thereby it has wide zone and narrow zone, and narrow zone is connected to wide zone, it is asymmetric with respect to wide zone to make that this narrow zone is set to, and by energy beam is made this semiconductor layer crystallization to narrow area illumination along the longitudinal direction in narrow zone is leniently regional to semiconductor layer.
Another aspect that is used to make the method for semiconductor device of the present invention comprises the steps: to form on this substrate will be as a semiconductor layer of work semiconductor layer; Handle the semiconductor layer that this wants shaping, thereby it have wide zone and narrow zone; And by energy beam is shone on the semiconductor layer from the upright position of semiconductor layer to the mode that longitudinal direction tilts according to the plane of scanning motion that makes beam spot, and make this semiconductor layer crystallization.
From consideration above, if can limit the fracture of the grain boundary that causes the mobility reduction, then mobility improves and can improve the performance of semiconductor element.For this purpose, can construct this work semiconductor layer satisfactorily from crystal grain, and the final form of this work semiconductor layer is a single crystal semiconductor of finishing with big crystal grain diameter.
In semiconductor device according to the invention, so construct this work semiconductor layer, make wide zone in the crystalline state of flow pattern, and narrow zone is in monocrystalline state basically with big crystal grain.Because the flow pattern in narrow zone causes reality not have the grain boundary, therefore, when narrow zone is used as a raceway groove, can guarantee to obtain to have the semiconductor device of high mobility.
In the method for manufacturing semiconductor device according to the present invention, energy beam by along the longitudinal direction in narrow zone leniently the zone to narrow area illumination to semiconductor layer, this semiconductor layer is patterned, according to making narrow zone be set to narrow zone is connected to this wide zone with respect to the asymmetric mode in wide zone.At this moment, wide zone is cured along direction of illumination, and formation is included in the flow pattern that has in check large diameter crystal grain on the direction of growth in wide zone.In this flow pattern, the grain boundary forms towards this narrow zone.Although shape and direction of illumination by the formed grain boundary of whole flow pattern are symmetrical, because it is asymmetric that narrow zone is formed wide relatively zone, therefore run on the sidewall of the boundary vicinity between narrow zone and the wide zone in narrow zone the grain boundary, and this is limited in the formation of grain boundary in the narrow zone.Because this effect forms a work semiconductor layer, wherein wide zone is in the crystalline state of the flow pattern with big crystal grain, and narrow zone is in the monocrystalline state basically.
In aspect another of the method for the present invention that is used for producing the semiconductor devices, energy beam is irradiated on the semiconductor layer, this semiconductor layer is patterned, thereby according to making narrow zone be set to respect to the asymmetric mode in wide zone narrow zone and wide zone be interconnected, the longitudinal direction to semiconductor layer tilts the plane of scanning motion of beam spot from the upright position in this manner.At this moment, wide zone is cured along direction of illumination, and is included in the flow pattern that has in check large diameter crystal grain on the direction of growth and is formed in this wide zone.This grain boundary is formed the direction in the narrow zone in this flow pattern.Although with the shape of the formed grain boundary of whole flow pattern with respect to the direction of illumination symmetry, because an inclination angle is given the plane of scanning motion of this beam, the boundary vicinity of grain boundary between approaching narrow zone and wide zone, run into sidewall and disappearance in narrow zone, this limits the formation of grain boundary in narrow zone.Because this effect forms a work semiconductor layer, wherein wide zone is in the crystalline state of the flow pattern with big crystal grain, and narrow zone is in the monocrystalline state basically.
Method according to manufacturing semiconductor device of the present invention further comprises the steps: to form a heat maintenance layer, only to cover a lateral parts in narrow zone selectively; And in this state the irradiation energy bundle.Should heat keep layer then, and be used to make the cooling rate of fusing less as a thermal storage device with big thermal capacity, and the heat distribution of control semiconductor layer, thereby the position that the control nucleus forms and the direction of crystal growth.In this case, reduce temperature by middle body and carry out crystallization from narrow zone.But because the sidepiece in narrow zone covered selectively by hot retaining layer, so it is difficult to reduce the temperature of sidepiece most, and can realize crystallization efficiently.Therefore, can realize having the crystalline state of big crystal grain diameter with higher reliability.
The invention provides a kind of method of making the film-type semiconductor device, this semiconductor device has substrate and composition is formed on this on-chip work semiconductor layer, and comprising following steps: forming on this substrate will be as a semiconductor layer of work semiconductor layer; Handle the semiconductor layer that this wants shaping, thereby it has wide zone and the narrow zone narrower than described wide zone, and narrow zone is connected to wide zone, make that this narrow zone is set to asymmetric (promptly with respect to wide zone, stretch out from a position in this narrow zone, and this position is the unidirectional skew of a side of the central area in zone leniently); After handling this semiconductor layer, the heat that forms narrow zone keeps layer, to cover the lateral parts in this narrow zone selectively across a separator; And under the state that forms heat maintenance layer, by energy beam is made this semiconductor layer crystallization to narrow area illumination along the longitudinal direction in narrow zone is leniently regional to semiconductor layer.
According to the method for above-mentioned device of the present invention, wherein when handling this semiconductor layer, an otch is formed in this narrow zone, and the junction that this otch is formed on narrow zone and wide zone makes this junction formation neck area that narrows down.
Method according to above-mentioned device of the present invention, wherein after the crystallization of semiconductor layer, by the form peripheral edge portions of removing semiconductor layer to this work semiconductor layer composition, so that make this semiconductor layer be shaped so that narrow zone and wide zone are provided with (that is, leniently stretch out the position of a side of the central area in zone in narrow zone) relatively symmetrically.
According to the method for above-mentioned device of the present invention, wherein this energy beam is exported energy continuously for the time.
According to the method for above-mentioned device of the present invention, wherein this energy beam of exporting energy continuously for the time is a continuous-wave laser beam.
According to the method for above-mentioned device of the present invention, wherein this continuous-wave laser beam is the solid-state laser bundle of semiconductor excitation.
According to the method for above-mentioned device of the present invention, wherein the output unsteadiness of energy beam between ± 1% per hour.
According to the method for above-mentioned device of the present invention, wherein this semiconductor layer has 400 nanometers or littler thickness.
According to the method for above-mentioned device of the present invention, wherein this narrow zone is formed as a raceway groove that is used for the work semiconductor layer.
According to the method for above-mentioned device of the present invention, wherein this narrow zone is formed the narrower width of width that has than the crystal grain of described work semiconductor layer.
According to the method for above-mentioned device of the present invention, wherein the beam spot of this energy beam is band shape or elliptical shape, and its scanning plane is a plane.
According to the method for above-mentioned device of the present invention, this continuous-wave laser beam of wherein exporting energy continuously shines by using the pulse of modulating matchingly with narrow zone.
The invention provides a kind of method of making the film-type semiconductor device, this semiconductor device has substrate and composition is formed on this on-chip work semiconductor layer, and comprising following steps: forming on this substrate will be as a semiconductor layer of work semiconductor layer; Handle this semiconductor layer, have wide zone and the narrow zone narrower than described wide zone so that be shaped as it; And by energy beam is shone on the semiconductor layer to the mode that longitudinal direction tilts according to the plane of scanning motion of the beam spot that the makes energy beam upright position from semiconductor layer, and make this semiconductor layer crystallization.
According to the method for above-mentioned device of the present invention, wherein when shining energy beam on the semiconductor layer, this beam spot is along the longitudinal direction scanning of semiconductor layer.
According to the method for above-mentioned device of the present invention, wherein when shining energy beam on the semiconductor layer, this beam spot with the direction at the inclination angle of the beam spot that is tilted on scan.
According to the method for above-mentioned device of the present invention, wherein the inclination angle of the plane of scanning motion of this beam spot+15 the degree and+75 the degree between, perhaps-75 the degree and-15 the degree between.
According to the method for above-mentioned device of the present invention, wherein when handling this semiconductor layer, an otch is formed in this narrow zone.
According to the method for above-mentioned device of the present invention, comprise the steps: further wherein that after handling this semiconductor layer the heat that forms narrow zone keeps layer, to cover the lateral parts in this narrow zone across a separator; Wherein under the state that forms heat maintenance layer, the longitudinal direction of energy beam along narrow zone shone on the semiconductor layer.
Method according to above-mentioned device of the present invention, wherein after the crystallization of semiconductor layer, to this work semiconductor layer composition, so that this semiconductor layer is shaped, thereby this narrow zone and wide zone are provided with relatively symmetrically by the form peripheral edge portions of removing semiconductor layer.
According to the method for above-mentioned device of the present invention, wherein this energy beam is exported energy continuously for the time.
According to the method for above-mentioned device of the present invention, wherein this energy beam of exporting energy continuously for the time is a continuous-wave laser beam.
According to the method for above-mentioned device of the present invention, wherein this continuous-wave laser beam is the solid-state laser bundle of semiconductor excitation.
According to the method for above-mentioned device of the present invention, wherein the output unsteadiness of energy beam between ± 1% per hour.
According to the method for above-mentioned device of the present invention, wherein this semiconductor layer has 400 nanometers or littler thickness.
According to the method for above-mentioned device of the present invention, wherein this narrow zone is formed as a raceway groove that is used for the work semiconductor layer.
According to the method for above-mentioned device of the present invention, wherein this narrow zone is formed the narrower width of width that has than the crystal grain of described work semiconductor layer.
According to the method for above-mentioned device of the present invention, wherein the beam spot of this energy beam is band shape or elliptical shape, and its scanning plane is a plane.
According to the method for above-mentioned device of the present invention, this continuous-wave laser beam of wherein exporting energy continuously shines by using the pulse of modulating matchingly with narrow zone.
Description of drawings
Figure 1A, 1B, 1C and 1D are illustrated in the sectional view that forms the method for a work semiconductor layer in the first formation method of an embodiment according to process sequences;
Fig. 2 A, 2B, 2C and 2D are illustrated in Figure 1A, 1B, 1C and 1D form the method for this work semiconductor layer afterwards according to process sequences sectional view;
Fig. 3 is the plan view that a handled amorphous si-layer is shown;
Fig. 4 is the plan view that the state of the amorphous si-layer that is formed with heat maintenance layer is shown;
Fig. 5 is the plan view that the direction of illumination of CW (continuous wave) laser beam is shown;
Fig. 6 A and 6B are the plan view that the crystal growth state is shown;
Fig. 7 A, 7B and 7C are the plan view that the state of crystal growth is shown;
Fig. 8 is the plan view that the work semiconductor layer that is partly covered by photoresist is shown;
Fig. 9 is the plan view that the work semiconductor layer of composition is shown;
Figure 10 is that the optical microphotograph that the crystal state of this work semiconductor layer of finishing is shown is taken pictures;
Figure 11 is the plan view that is illustrated in the state of the amorphous si-layer of a distortion example in the first formation method;
Figure 12 A, 12B, 12C and 12D are illustrated in the sectional view that forms the method for a work semiconductor layer in the second formation method of an embodiment according to process sequences;
Figure 13 A, 13B, 13C and 13D are illustrated in Figure 12 A, 12B, 12C and 12D form the method for this work semiconductor layer afterwards according to process sequences sectional view;
Figure 14 is the plan view that a handled amorphous si-layer is shown;
Figure 15 is the plan view that the state of the amorphous si-layer that is formed with heat maintenance layer is shown;
Figure 16 is the plan view that the direction of illumination of CW laser beam is shown;
Figure 17 is the plan view that the crystal growth state is shown;
Figure 18 illustrates the photo of the crystalline state of the work semiconductor layer of finishing by the light microscope shooting;
Figure 19 be illustrate have with Figure 18 in optics show the (declination angle: the TEM photo in the narrow zone of same area 45 degree) of taking pictures;
Figure 20 is the sectional view that the composition state that forms a TFT work semiconductor layer is shown;
Figure 21 is illustrated in the second formation method to be out of shape in the example the plan view of the state of laser radiation to an amorphous si-layer at one;
Figure 22 A, 22B, 22C and 22D are the photo by the light microscope shooting that the crystalline state of the work semiconductor layer of finishing is shown;
Figure 23 A, 23B and 23C be illustrate by among EBSD systematic observation and Figure 22 A, 22B, 22C and the 22D by image analysis (mapping analysis) result in the identical narrow zone of the captured photo of light microscope;
Figure 24 A, 24B are the sectional view that the method for making the TFT relevant with present embodiment is shown according to process sequences with 24C;
Figure 25 A, 25B and 25C are the sectional view that is illustrated in after Figure 24 A, 24B and the 24C according to the method for the process sequences manufacturing TFT relevant with present embodiment;
Figure 26 A and 26B are the sectional view that is illustrated in after Figure 25 A, 25B and the 25C according to the method for the process sequences manufacturing TFT relevant with present embodiment;
Figure 27 A, 27B and 27C are the sectional view that is illustrated in after Figure 26 A and the 26B according to the method for the process sequences manufacturing TFT relevant with present embodiment;
Figure 28 A and 28B are for illustrating the performance diagram of use according to the mobility of the n type of the work semiconductor layer of the first formation method and p type TFT respectively; And
Figure 29 A and 29B are for illustrating the performance diagram of use according to the mobility of the n type of the work semiconductor layer of the second formation method and p type TFT respectively.
Embodiment
Hereinafter, the application specific embodiments of the invention are described with reference to the accompanying drawings.
In the present embodiment, thin-film transistor (TFT) is simplified as a semiconductor device, and will describe its structure with and manufacture method.
The structure of-work semiconductor layer-
Before describing manufacture method, with the structure of at first describing as the TFT work semiconductor layer of a feature of the present invention.
Most important characteristics as work semiconductor layer of the present invention is to make the channel part of this work semiconductor layer be essentially a mono-crystalline structures.In order not have to form the work semiconductor layer with this structure on the brilliant substrate of son, following mechanism is important.
(1) mechanism of a crystal grain of formation,
(2) mechanism of control growing direction, and
(3) limit the mechanism of the appearance of other crystal grain in process of production.
About (1)
In order to form a crystal grain, need remove excessive grain boundary from the zone that will form monocrystalline.
About (2)
High-speed fusing and cured are depended in excimer laser crystallization (ELC).On the interface between silicon melt and the substrate, go out crystal from the accidental nucleus growth that forms.Extremely be difficult to control the position of nucleus.When the number of nucleus more after a little while, crystal grain diameter is much larger than the thickness of silicon layer, thereby although the distance of crystal grain is shorter, can think the situation that cross growth occurs.The size of crystal is by from the conflict (collision) of the crystal grain of adjacent nucleus growth and determine.Cross growth can not be by Artificial Control, but a kind of natural phenomena.On the other hand,, form flow pattern by the scanning energy bundle using energy beam (being CW laser) to export in the crystallization treatment of the energy continuous for the time at this, thus can be on specific range the control growing direction.
About (3)
In order to limit the growth of other crystal grain except target crystal grain, need the temperature gradient of control semiconductor layer.
In order to use the crystal formation channel region, need prevent to enter this channel region as the grain boundary on the border of flow pattern.Therefore, the present invention proposes a kind of mechanism according to mechanism (1) to (3) and prevents that the grain boundary from entering channel region, and is as mentioned below.
The formation method of-work semiconductor layer-
The formation method of work semiconductor layer is described below.
(the first formation method)
At first, the first formation method is described.Figure 1A, 1B, 1C, 1D and Fig. 2 A, 2B, 2C, 2D are for illustrating the sectional view of the first formation method of this work semiconductor layer according to process sequences.
At first, as shown in Figure 1A, be formed on the glass substrate 1 as the silicon oxide layer 2 of resilient coating, slice thickness is approximately 400 nanometers.Then, form by the made amorphous si-layer 3 of amorphous silicon, as the semiconductor layer of bed thickness by the PECVD method at this with about 200 nanometers.The bed thickness of this amorphous si-layer 3 is 400 nanometers or littler, preferably is approximately 30 nanometers to about 200 nanometers, and the bed thickness that its thickness and hereinafter described heat keep layer is relevant.Then, under the temperature of 450 degree, carrying out two hours heat treatment on the glass substrate 1 to remove dehydrogenation.
Then, amorphous si-layer 3 is treated to island as shown in Figure 1B.In the present embodiment, amorphous si-layer 3 is by photoetching and dry etching and composition, make it have a wide regional 3a and a narrow regional 3b, and this narrow regional 3b is connected to this wide regional 3a and make narrow regional 3b asymmetric with respect to wide regional 3a, as shown in Figure 3.At this, the boundary vicinity between wide regional 3a and the narrow regional 3b becomes a neck area.
Then, as shown in Fig. 1 C, form a silicon oxide layer 4 by the PECVD method, as a separator, it has the bed thickness of about 50 nanometers, to cover the whole surface (side and upper surface) of amorphous si-layer 3.
Then, as shown in Fig. 1 D, form an amorphous si-layer by the plasma CVD method, make it have the bed thickness of about 250 nanometers, covering these amorphous si-layers 3 across this silicon oxide layer 4, and this amorphous si-layer is changed into polysilicon layer 5 by the metal guide solid state growth method of use nickel (Ni).Metal impurities for the guiding solid state growth can use any other metal except nickel.At this moment, the solid state growth temperature is set to 570 ℃, and is used for heat treatment period and was set to 8 hours.Although the amorphous si-layer of bed thickness with about 250 nanometers, is used as the amorphous si-layer 3 that the silicon oxide film 4 of separator covered by being changed into polysilicon layer 5 by this processing and is maintained at the amorphous silicon state,, silicon oxide layer 4 spreads because preventing nickel.
Then, as shown in Fig. 2 A and Fig. 4, polysilicon layer 5 is patterned to island, to cover the sidepiece of narrow regional 3b, then by using HF solution to remove the silicon oxide film 4 of exposure.At this moment, except sidepiece, be exposed on the surface of narrow regional 3b.
Then, as shown in Fig. 2 B, keeping the polysilicon layer 5 of layer to encase under the state of narrow regional 3b across silicon oxide film 4 as heat from side surface, narrow regional 3b is shone from upper surface by CW laser beam (exciting the solid-state laser (DPSS laser) of (LD excites) for semiconductor at this), so that amorphous si-layer 3 crystallizations, thereby form this work semiconductor layer 11.
At this, as an example, above-mentioned solid-state laser is to use the semiconductor LD of the second harmonic of the wavelength with 532 nanometers to excite Nd:YVO
4Laser, it is output as 10w.In the solid-state laser that semiconductor LD excites, the instable noise (optical noise) of expression energy beam is 0.1rms% or littler in the scope of 10Hz to 2MHz, and energy beam is exported instable index between ± 1% per hour, and this compares with other energy beam is very good.
Incidentally, the part of CW laser beam irradiation is not limited to the front surface of substrate, and it can shine from the rear surface.
For the direction of illumination (scanning direction) of CW laser beam, as shown in Figure 5, this beam parallels with the longitudinal direction of narrow regional 3b from the bigger wide regional 3a of area and scans towards the less narrow regional 3b of area.At this moment, the neck area that width narrows down suddenly produces so-called filter effect, thereby the many grain boundaries in this zone disappear, and prevents that this grain boundary from entering into narrow regional 3b.Therefore, form a monocrystalline silicon.Incidentally, when irradiation during this CW laser beam, can also utilize by exporting the CW laser beam of energy continuously with the be complementary pulse irradiation modulated of narrow regional 3b.
The principle that forms monocrystalline silicon according to this formation method by irradiation CW laser beam is described below.
Because only amorphous si-layer 3 is used as 5 covering of thick polysilicon layer that heat keeps layer on the lateral parts of narrow regional 3b, therefore the polysilicon layer 5 on side surface is as thermal storage device.As a result, there is not nucleus to produce from the lateral edges of narrow regional 3b.In this case, in the process that temperature reduces, carry out crystallization from the middle part of narrow regional 3b.But,, therefore be difficult to reduce the temperature of this lateral parts, thereby can realize effective crystallization because only the lateral parts of narrow regional 3b is covered selectively by polysilicon layer 5.When the crystallization of narrow regional 3b, the single die of selecting in neck area is as crystal seed (Fig. 6 A).Because the CW laser beam scans with narrow regional 3b with paralleling, so solid-liquid interface also moves with narrow regional 3b with paralleling.Owing to, then in narrow regional 3b, form a monocrystalline silicon (Fig. 6 B) only since a crystal seed crystallization.
In the crystal growth in wide regional 3a, form nucleus at the edge of wide regional 3a, this crystal is to growth inside.
In wide regional 3a, as shown in Figure 7A, carry out crystal growth in the flow pattern that flows in having the oarse-grained scanning direction of 5 microns or bigger crystal grain diameter, this bulky grain is corresponding to 10 to 100 times size by the particle diameter of the formed crystal of excimer laser crystallization (ELC).At this moment, the grain boundary is towards the central mobile of wide regional 3a.
Using the fractographic actual result of optics shown in Fig. 7 B.This image illustrates the schematic diagram of the grain boundary that forms by execution dry etching (seccoetching).
As forming a example with the symmetrical narrow regional 3b of wide regional 3a shown in Fig. 7 C, to compare with this example.Therefore, move towards the middle part of wide regional 3a owing to be formed on the grain boundary of the flow pattern among the wide regional 3a, then when narrow regional 3b was set at the middle part of wide regional 3a, this grain boundary entered narrow regional 3b in large quantities.At this moment, the possibility of growing single-crystal is very low in narrow regional 3b.
On the other hand, because narrow regional 3b is formed with wide regional 3a asymmetricly in this example, so the grain boundary is shifted to narrow regional 3b obliquely.Correspondingly, at the boundary member of narrow regional 3b to wide regional 3a, wall and the disappearance of narrow regional 3b are met in the grain boundary, thereby prevent to enter narrow regional 3b inside.Therefore, narrow regional 3b is very easy to obtain monocrystalline state.
In addition, because the CW laser beam is from having large-area wide regional 3a towards the narrow regional 3b scanning with small size, so crystal grain tends to along with scanning distance is long more and grow greatly more.In case form big crystal grain, then the grain boundary possibility that enters narrow regional 3b reduces.Correspondingly, wish the width of the width of narrow regional 3b less than crystal grain.
In addition, in narrow regional 3b, in by the curing time after the CW laser beam liquefaction, be formed on middle body and be low temperature and be the Temperature Distribution of high temperature at periphery.Because this Temperature Distribution forms the temperature gradient from the middle body to the periphery, even the grain boundary is mixed among the narrow regional 3b, move to the outside in crystal growing process this grain boundary.In other words, when scanning distance was elongated, all defect part outwards moved, thereby promoted the formation of monocrystalline.
Because above-mentioned mechanism, this narrow regional 3b is by crystallization in crystal formation.
Then, as shown in Fig. 2 C and Fig. 8, in the work semiconductor layer 11 that so forms, do not exist the part of silicon oxide film 4 and polysilicon layer 5 to be covered by photoresist film 12.
As shown in Fig. 2 D, after use photoresist film 12 is removed polysilicon layer 5 as mask by dry etching, remove this photoresist film 12 by ashing treatment or the like, remove silicon oxide film 4 by HF solution then.
As indicated above, finish this work semiconductor layer (silicon island) 11.
The light micrograph of the crystalline state of the work semiconductor layer of so finishing 11 is shown in Figure 10.
At this, carry out dry etching, this defective is occurred, and use the mask pattern that only keeps narrow regional 11b to study the crystallinity of narrow regional 11b.This is the reason that the part of why wide regional 11a disappears.Narrow as can be seen regional 11b is in monocrystalline state from this photo.
By using the silicon island of formation like this, can form this TFT work semiconductor layer 11 by other new pattern as shown in Figure 9, it is shaped as and makes narrow regional 11b and wide regional 11a symmetry.At this, because for example such defective of peeling off of aspect appears on the peripheral boundary part of silicon island, therefore by remove the better work semiconductor layer that periphery forms does not have defective with this composition easily.
-modified examples-
Consider a kind of good growing method, explanation is used to form distortion example with different pattern shape at this.
In this example, when amorphous si-layer 3 was treated to island, in laser radiation processing procedure afterwards, the place, an end that approaches the grain boundary of narrow regional 3b in the flow pattern of wide regional 3a formed otch 13, as shown in Figure 11.Then, the grain boundary that further is limited in this flow pattern enters narrow regional 3b, thereby realizes monocrystalline more reliably.
(the second formation method)
At first, the second formation method is described.Figure 12 A, 12B, 12C, 12D and Figure 13 A, 13B, 13C, 13D are for illustrating the sectional view of the second formation method of this work semiconductor layer according to process sequences.
At first, as shown in Figure 12 A, be formed on the glass substrate 1 as the silicon oxide layer 2 of resilient coating, slice thickness is approximately 400 nanometers.Then, form by the made amorphous si-layer 31 of amorphous silicon, as the semiconductor layer of bed thickness by the PECVD method at this with about 200 nanometers.The bed thickness of this amorphous si-layer 31 is 400 nanometers or littler, preferably is approximately 30 nanometers to about 200 nanometers, and the bed thickness that its thickness and hereinafter described heat keep layer is relevant.Then, under the temperature of 550 degree, carrying out two hours heat treatment on the glass substrate 1 to remove dehydrogenation.
Then, as shown in Figure 12 B and 14, by photoetching and dry etching unformed silicon layer 31 is carried out composition and be shaped, thereby it has wide regional 31a and narrow regional 31b, and narrow regional 31b is connected to wide regional 31a, makes narrow regional 31b with respect to wide regional 31a symmetry.At this, the boundary vicinity between wide regional 31a and the narrow regional 31b becomes a neck area.
Then, as shown in Figure 12 C, by the silicon oxide film 4 of PECVD method formation as separator, it makes the thickness with about 50 nanometers, to cover the whole surface (side and upper surface) of amorphous si-layer 31.
Then, as shown in Figure 12 D, form amorphous si-layer by the plasma CVD method, make it have the thickness of about 250 nanometers, to cover amorphous si-layer 31 across silicon oxide film 4, and, make this amorphous si-layer change into polysilicon layer 5 by using nickel (Ni) to carry out the solid state growth of metal guide.Metal impurities for the guiding solid state growth can use any other metal except nickel.At this moment, the solid state growth temperature is set to 570 ℃, and is used for heat treatment period and was set to 8 hours.Although having the amorphous si-layer of the bed thickness of about 300 nanometers is changed by this processing and is polysilicon layer 5, but the amorphous si-layer 31 that the silicon oxide film 4 that is used as separator is covered remains on the amorphous silicon state, produces diffusion because silicon oxide film 4 prevents nickel.
Can be beginning to form polysilicon layer 5, to cover amorphous si-layer 31 by chemical vapor-phase growing method or physical evaporation method.And preferably also use amorphous silicon.
Then, as shown in Figure 13 A and Figure 15, polysilicon layer 5 is patterned to island, to cover the lateral parts of narrow regional 31b, uses HF solution to remove the silicon oxide film 4 of exposure then.At this moment, the surface of narrow regional 31b is exposed except lateral parts.
Then, as shown in Figure 13 B, keeping the polysilicon layer 5 of layer to encase under the state of narrow regional 31b across silicon oxide film 4 as heat from side surface, narrow regional 31b is shone from upper surface by CW laser beam (exciting the solid-state laser (DPSS laser) of (LD excites) for semiconductor at this), so that these amorphous si-layer 31 crystallizations, thereby form this work semiconductor layer 11.
As an example, above-mentioned solid-state laser (is the CW laser at this) is to use the semiconductor LD of the second harmonic of the wavelength with 532 nanometers to excite Nd:YVO
4Laser, it is output as 10w.In the solid-state laser that semiconductor LD excites, the instable noise (optical noise) of expression energy beam is 0.1rms% or littler in the scope of 10Hz to 2MHz, and energy beam is exported instable index between ± 1% per hour, and this compares with other energy beam is very good.
Incidentally, the part of CW laser beam irradiation is not limited to the front surface of substrate, and it can shine from the rear surface.
In this formation method, the CW laser beam irradiation during to amorphous si-layer 31, as shown in Figure 16, the angle (declination angle) that the plane of scanning motion 42 of the beam spot 41 of CW laser beam tilts to be scheduled to the longitudinal direction of (represented by the X-axis among Figure 16) amorphous si-layer 31 from (represented by the Y-axis Figure 16) upright position, and beam spot 41 is in the longitudinal direction scanning of vertical direction towards (represented by Y-axis among Figure 16 and arrow M) amorphous si-layer 31.At this, for beam spot 41, preferably use band shape or elliptical shape, and its plane of scanning motion 42 is essentially a plane.At this moment since in position that width narrows down suddenly as a neck area, therefore form a monocrystalline silicon.
The mechanism that forms monocrystalline silicon according to this formation method by irradiation CW laser beam is described below.
As shown in Figure 17, for the narrow regional 31b as the TFT raceway groove is formed a monocrystalline, need to suppress nucleus and appear on the narrow regional 31b, and prevent that having the grain boundary of growing on the large-area regional A in will the wide regional 31a as the border of crystal grain enters narrow regional 31b.In this formation method, tilt to scan and shine this beam spot 41 by boundary member towards narrow regional 31b to wide regional 31a, this grain boundary is formed on the direction vertical with the borderline phase of the plane of scanning motion 42 of beam spot 41.Therefore, the grain boundary is formed obliquely, and makes beam spot 41 tilt to X-direction.Correspondingly, even enter this narrow regional 31b from the grain boundary of a crystal grain of nucleus growth, this grain boundary is shifted to this narrow regional 31b obliquely, and at the boundary member of narrow regional 31b to wide regional 31a, the wall of narrow regional 31b is run in this grain boundary, and most of border disappears, and enters into narrow regional 31b inside thereby limit this grain boundary.Therefore, narrow regional 31b ratio is easier to obtain monocrystalline state.
In this formation method, this grain boundary enters boundary member between wide regional 31a and the narrow regional 31b obliquely with higher reliability, and these are different with the above-mentioned first formation method.In other words,, can guarantee that the grain boundary runs into the wall of narrow regional 31b according to this formation method, rather than contingency.
Consideration description above, the declination angle that preferably makes the plane of scanning motion 42 of beam spot 41 are extremely+75 degree of+15 degree, perhaps-75 spend extremely-15 degree.This be because when this angle be equal to or less than+15 when spending (being equal to or greater than-15 spends), the grain boundary is difficult to run into the wall of narrow regional 31b, when this angle be equal to or greater than+75 (be equal to or less than-75 degree) when spending, then, therefore be difficult to guarantee that the CW laser beam effectively shines on the amorphous si-layer 31 because the monocrystalline rate of narrow regional 31b reduces.
Because unsetting silicon layer 31 is covered by thick polysilicon layer 5, its conduct only heat on the lateral parts of narrow regional 31b keeps layer, and the polysilicon layer 5 on the side is as the thermal storage device with big thermal capacity.Therefore, the heat distribution Be Controlled of the less and amorphous si-layer 31 of the cooling rate of melt, thereby the position that nucleus forms and the direction Be Controlled of crystal growth.In this case, carry out crystallization by reducing temperature from the middle part of narrow regional 31b.But,, therefore be difficult to reduce the temperature of lateral parts, and can realize crystallization effectively because only the lateral parts of narrow regional 31b is covered selectively by polysilicon layer 5.As a result, can realize having the crystalline state of big crystal grain diameter highly reliably, and can nucleus not occur from the sidewall of narrow regional 31b.
In addition, because grain growth must be big more when the scanning distance of laser is long more, therefore in an inclined direction grown crystal is favourable.In addition, be similar to the first formation method, by forming narrow regional 31b, and, can further prolong the scanning distance of laser by forming bigger wide regional 31a with respect to the asymmetric position of wide regional 31a.In case form big crystal grain, then the grain boundary possibility that enters narrow regional 31b further reduces.
At narrow regional 31b, when being solidified again after the CW laser beam fusing, be low temperature and be the Temperature Distribution of high temperature that at middle body even the grain boundary is mixed among the narrow regional 31b, it shifts to the outside in crystal growing process at periphery.In other words, when scanning distance was elongated, all defect part outwards moved, thereby promoted the formation of monocrystalline.
Because above-mentioned mechanism, in crystal formation, this narrow regional 31b is by crystallization.
Then, be similar to the first formation method, as shown in Figure 13 C, in the work semiconductor layer 32 that so forms, covered by photoresist film 12 in the position that does not have silicon oxide film 4 and polysilicon layer 5.
As shown in Figure 13 D, after use photoresist film 12 is removed polysilicon layer 5 as mask by dry etching, remove photoresist film 12 by ashing treatment or the like, remove silicon oxide film 4 by HF solution then.
As indicated above, finish this work semiconductor layer (silicon island) 32.
The light micrograph of the crystalline state of the work semiconductor layer of so finishing 32 is shown in Figure 18.
At this, as an example, when being the beam spot of φ when carrying out crystallization by providing the inclination angle, equaling 45 degree with declination angle is example.Discovery forms single crystal grain and does not have big grain boundary in narrow zone.In addition, owing to there is not the interference color of the aspect in narrow zone of finding that big change takes place, therefore learn to obtain a smooth aspect.For the evenness of work semiconductor layer, when the roughness Ra on surface is approximately 7 or more hour, this work semiconductor layer is considered to enough smooth.In fact, when the surface roughness Ra of the review image study by AFM in narrow zone, Ra equals 4 nanometers.
Then, shown in Figure 19 as with Figure 18 in the observed result of TEM in narrow zone of light micrograph same area (declination angle: 45 degree).
In electron diffraction pattern, see the not clear pattern of dislocation or the like phenomenon, and in about 8 microns * 20 microns narrow zone, do not see the grain boundary, thereby think that this is a single die.In addition, find out that from electron diffraction pattern the monocrystalline state narrow zone has (110) direction.Similarly, it can be controlled as and have (100) direction as monocrystalline state.In fact, when monocrystalline state in narrow zone of inventor research, be that 15 degree are to 45 degree if find declination angle, be preferably 30 the degree to 45 the degree, then crystal has (100) direction easily, and if declination angle be 45 the degree to 75 the degree, be preferably 45 degree to 60 degree, then the inclination angle has (110) direction.
As indicated above, according to this current formation method, can form single die, and work as the direction of the narrow regional 31b crystallization time control combinations body of amorphous si-layer 31 with well-crystallized.
By using the silicon island of formation like this, can be by the formed TFT work semiconductor layer 32 of further as shown in Figure 20 composition with wide regional 32a and narrow regional 32b.At this, because therefore peeling off on the peripheral boundary that such defective appears at the silicon island easily of aspect for example removed the peripheral boundary part by this composition and formed the good work semiconductor layer that does not have defective.
-modified examples-
In the above-mentioned second formation method, the CW laser beam irradiation to amorphous si-layer 31 time, find by the plane of scanning motion 42 these declination angle of inclination of beam spot 41, beam spot 41 with the perpendicular direction of the longitudinal direction of amorphous si-layer 31 on scan.But in this modified examples, as shown in Figure 21, the plane of scanning motion 42 of beam spot 41 is tilted this declination angle, and beam spot 41 is along the scanning direction (shown in the arrow N among Figure 21) of declination angle.Incidentally, in this modified examples, only the scanning direction of beam spot 41 is different with the direction of the second formation method, but the shape of the semiconductor layer 32 of working, the appearance of crystallization and mechanism, the CW laser structure and use (except the scanning direction), or the like identical with the second formation method.
The crystalline state of the work semiconductor of taking by light microscope of being finished 32 is shown in Figure 22.
At this,,, declination angle and the scanning direction examples for-45 degree, 30 degree, 45 degree and 60 degree are shown respectively in Figure 22 A, 22B, 22C and 22D when being the beam spot of φ when carrying out crystallization by providing the inclination angle as each example.In each photo, find in this narrow zone, to form a single die, and do not have big grain boundary.In addition, owing to see the interference color of aspect in narrow zone big change not taking place, therefore thinks to obtain a smooth aspect.
Then, the result of map analysis is shown in Figure 23 A, 23B and the 23C, wherein the identical narrow zone of photo by the light microscope among an EBSD (electronics backscattering diffraction) systematic observation and Figure 22 A, 22B, 22C and the 22D (declination angle and 30 degree, 45 degree and 60 scanning directions of spending).Figure 23 A, 23B and 23C correspond respectively to the scanning direction of declination angle and 30 degree, 45 degree and 60 degree.In each Figure 23 A, 23B and 23C, represented by the color of fundamental triangle for the direction that the grain surface of (100) is pointed.
Since represented in the whole narrow zone that does not have big change on the color and illustrating in IPF (antipole the resembles figure) map analysis of a designator of crystallographic direction by identical color, a single die formed because think.In addition, because crystal grain in narrow zone can clearly be illustrated in clear illustrating in an IQ (picture quality) map analysis of the definition designator in the EBSD system, therefore think to form in this narrow zone to have good crystalline crystal grain, it does not have the grain boundary not have surface stress (surface strain) yet.
In addition, any position in the narrow zone that forms when carrying out laser scanning with identical declination angle with identical scanning direction is selected and when analyzing by EBSD respectively, and the direction of each crystal connects on identical declination angle and scanning direction and is bordering on (100).This expression can be controlled crystallographic direction by regulating declination angle and scanning direction on specific degrees.Specifically, when monocrystalline state in narrow zone of inventor research, if finding declination angle is that 15 degree are to 45 degree, be preferably 30 degree when 45 spend, this crystal has the direction of (100) easily, if and declination angle be 45 the degree to 75 the degree, be preferably 45 the degree to 60 the degree, then this crystal has (110) direction.
In this distortion, be similar to the second formation method, can guarantee that the grain boundary runs into the wall of narrow regional 31b, rather than accidental the generation, thereby can make narrow regional 31b become the monocrystalline state of big crystal grain diameter highly reliably.
The manufacturing of-TFT-
Use the work semiconductor layer 11 or 32 of formation as indicated above, make a TFT (n channel TFT).Figure 24 A to Figure 27 C is for illustrating the sectional view of the manufacture method of the TFT relevant with present embodiment according to process sequences.Hypothesis uses the work semiconductor layer 11 according to the first formation method to be described below.
At first, as shown in Figure 24 A, prepare the work semiconductor layer 11 that forms by said method above as the silicon oxide layer 22 of resilient coating at glass substrate 21.At this, the narrow regional 11b of work semiconductor layer 11 is as a raceway groove.
Then, as shown in Figure 24 B, on work semiconductor layer 11, form silicon oxide layer 23 as the gate oxidation films of bed thickness with about 120 nanometers by the PECVD method.At this moment, can use other method, for example LPCVD method or sputtering method.
Then, as shown in Figure 24 C, form aluminium film (perhaps aluminium alloy film) 24 to have the thickness of about 350 nanometers by sputtering method.
Then, as shown in Figure 25 A, aluminium film 24 is patterned into an electrode shape, to form a grid 24 by photoetching and dry etching method subsequently.
Then, as shown in Figure 25 B, use the grid 24 of this composition silicon oxide layer 23 to be carried out composition, duplicate the gate oxidation films 23 of the shape of this grid 24 with formation as mask.
Then, as shown in Figure 25 C, use this grid 24 in two side portions the grid 24 of this work semiconductor layer 11 to be carried out ion and inject as mask.Specifically, n type impurity (is phosphorus (P) at this) is at the acceleration energy and 5 * 10 of 10keV
15/ cm
2The condition of dosage under carry out ion and inject, with formation source/drain region.
Then, as shown in Figure 26 A, excimer laser is being shone on source/drain region to activate phosphorus wherein, as shown in Figure 26 B, the deposit bed thickness is approximately the SiN of 300 nanometers, with tectal surface, thereby forms an interlayer insulating film 25.
Then, as shown in Figure 27 A, make the surface portion exposed contact hole 26 in the surface portion of grid 24 of work semiconductor layer 11 and source/drain region be formed a perforate on this interlayer insulating film 25 respectively.
Then, as shown in Figure 25 B, forming metal film 27 made by aluminium or the like with after embedding each contact hole 26, metal film 27 is patterned to form respectively by the contact hole as shown in Figure 27 C 26 and the grid 24 of work semiconductor layer 11 and the wiring 27 that source/drain region is conducted.
Then, after the formation of the heat maintenance layer that covers whole surface, finish this n type TFT.
In fact, the n type TFT of this embodiment produces according to a kind of like this mode, makes work semiconductor layer 11 have about 5 microns channel length and about 3 microns channel width.Result as detecting its mobility can obtain up to 560cm
2The high mobility of/Vs (Figure 28 A).Incidentally, the result as the mobility of measuring the p type TFT that uses the same procedure manufacturing can obtain 200cm
2The mobility of/Vs (Figure 28 B).
In addition, use work semiconductor layer 32, make n type TFT (about 5 microns channel length, about 3 microns channel width) according to the mode identical with Figure 24 A to Figure 27 C according to the second formation method.Result as measuring its mobility can obtain up to 580cm
2The high mobility (Figure 29 A) that/Vs is such.Incidentally, the result as the mobility of measuring the p type TFT that uses the same procedure manufacturing can obtain 234cm
2The mobility of/Vs (Figure 29 B).
As indicated above, according to present embodiment, can form the good work semiconductor layer 11 or 32 of little influence, to realize TFT with high mobility with insignificant grain boundary.
Although should be pointed out that amorphous silicon is used as a semiconductor layer in the present embodiment, except amorphous silicon, can use polysilicon.In addition, this polysilicon can form by metal guide solid state growth method.Preferably, can also improve the quality of crystal by the temperature of rising substrate or the thermal strain of release crystallization.In addition, can use the mixture (composition) of silicon and germanium.
Described in the present embodiment semiconductor device can be applied to have TFT, the LCD (LCD) of the integrated shape of peripheral circuit of panel based system (system-on-panel), glass-based system (system-on-glass) and SOI element.
According to the present invention, a kind of film-type semiconductor device can be provided, it forms a work semiconductor layer by the thin semiconductor layer from little influence with insignificant liquid crystal border, and realize high mobility, and provide a kind of can be easily and make the method, semi-conductor device manufacturing method of semiconductor device reliably.
Present embodiment is considered to illustrative and nonrestrictive in all fields, and the implication of equal value of claim and the institute in the scope change be comprised in.The present invention can be embodied in other concrete form and not break away from its spirit or substantive characteristics.
Claims (28)
1. method of making the film-type semiconductor device, this semiconductor device has substrate and composition is formed on this on-chip work semiconductor layer, comprising following steps:
Forming on this substrate will be as a semiconductor layer of work semiconductor layer;
Handle and to want this semiconductor layer of shaping, thereby make it have wide zone and the narrow zone narrower than described wide zone, and narrow zone is connected to wide zone, make this narrow zone stretch out from a position, this position is the unidirectional skew of a side of regional central area leniently;
After handling this semiconductor layer, the heat that forms narrow zone keeps layer, to cover the both sides of the upper surface in this narrow zone selectively across a separator; And
Under the state that forms heat maintenance layer, by energy beam is made this semiconductor layer crystallization to narrow area illumination along the longitudinal direction in narrow zone is leniently regional to semiconductor layer.
2. the method for manufacturing semiconductor device according to claim 1, wherein when handling this semiconductor layer, an otch is formed in this narrow zone, and the junction that this otch is formed on narrow zone and wide zone makes this junction formation neck area that narrows down.
3. the method for manufacturing semiconductor device according to claim 1, wherein after the crystallization of semiconductor layer, by the form peripheral edge portions of removing semiconductor layer to this work semiconductor layer composition, so that make this semiconductor layer be shaped so that narrow zone leniently stretches out the position of a side of the central area in zone.
4. the method for manufacturing semiconductor device according to claim 1, wherein this energy beam is exported energy continuously for the time.
5. the method for manufacturing semiconductor device according to claim 4, wherein this energy beam of exporting energy continuously for the time is a continuous-wave laser beam.
6. the method for manufacturing semiconductor device according to claim 5, wherein this continuous-wave laser beam is the solid-state laser bundle of semiconductor excitation.
7. the method for manufacturing semiconductor device according to claim 4, wherein the output unsteadiness of energy beam between ± 1% per hour.
8. the method for manufacturing semiconductor device according to claim 1, wherein this semiconductor layer has 400 nanometers or littler thickness.
9. the method for manufacturing semiconductor device according to claim 1, wherein this narrow zone is formed as a raceway groove that is used for the work semiconductor layer.
10. the method for manufacturing semiconductor device according to claim 1, wherein this narrow zone is formed the narrower width of width that has than the crystal grain of described work semiconductor layer.
11. the method for manufacturing semiconductor device according to claim 1, wherein the beam spot of this energy beam is band shape or elliptical shape, and its scanning plane is a plane.
12. the method for manufacturing semiconductor device according to claim 5, this continuous-wave laser beam of wherein exporting energy continuously shines by using the pulse of modulating matchingly with narrow zone.
13. a method of making the film-type semiconductor device, this semiconductor device have substrate and composition is formed on this on-chip work semiconductor layer, comprising following steps:
Forming on this substrate will be as a semiconductor layer of work semiconductor layer;
Handle this semiconductor layer, make it have wide zone and the narrow zone narrower than described wide zone so that be shaped as;
After handling this semiconductor layer, the heat that forms narrow zone keeps layer, to cover the both sides of the upper surface in this narrow zone across a separator; And
By energy beam is shone on the semiconductor layer to the mode that longitudinal direction tilts according to the plane of scanning motion of the beam spot that the makes energy beam upright position from semiconductor layer, and make this semiconductor layer crystallization.
14. the method for manufacturing semiconductor device according to claim 13, wherein when shining energy beam on the semiconductor layer, this beam spot is along the longitudinal direction scanning of semiconductor layer.
15. the method for manufacturing semiconductor device according to claim 13, wherein when shining energy beam on the semiconductor layer, this beam spot with the direction at the inclination angle of the beam spot that is tilted on scan.
16. the method for manufacturing semiconductor device according to claim 13, wherein the inclination angle of the plane of scanning motion of this beam spot+15 the degree and+75 the degree between, perhaps-75 the degree and-15 the degree between.
17. the method for manufacturing semiconductor device according to claim 13, wherein when handling this semiconductor layer, an otch is formed in this narrow zone, and the junction that this otch is formed on narrow zone and wide zone makes this junction formation neck area that narrows down.
18. the method for manufacturing semiconductor device according to claim 14 wherein further comprises the steps:
Wherein under the state that forms heat maintenance layer, the longitudinal direction of energy beam along narrow zone shone on the semiconductor layer.
19. the method for manufacturing semiconductor device according to claim 13, wherein after the crystallization of semiconductor layer, by the form peripheral edge portions of removing semiconductor layer to this work semiconductor layer composition, so that make this semiconductor layer be shaped so that narrow zone leniently stretches out the position of a side of the central area in zone.
20. the method for manufacturing semiconductor device according to claim 13, wherein this energy beam is exported energy continuously for the time.
21. the method for manufacturing semiconductor device according to claim 20, wherein this energy beam of exporting energy continuously for the time is a continuous-wave laser beam.
22. the method for manufacturing semiconductor device according to claim 21, wherein this continuous-wave laser beam is the solid-state laser bundle of semiconductor excitation.
23. the method for manufacturing semiconductor device according to claim 20, wherein the output unsteadiness of energy beam between ± 1% per hour.
24. the method for manufacturing semiconductor device according to claim 13, wherein this semiconductor layer has 400 nanometers or littler thickness.
25. the method for manufacturing semiconductor device according to claim 13, wherein this narrow zone is formed as a raceway groove that is used for the work semiconductor layer.
26. the method for manufacturing semiconductor device according to claim 13, wherein this narrow zone is formed the narrower width of width that has than the crystal grain of described work semiconductor layer.
27. the method for manufacturing semiconductor device according to claim 13, wherein the beam spot of this energy beam is band shape or elliptical shape, and its scanning plane is a plane.
28. the method for manufacturing semiconductor device according to claim 21, this continuous-wave laser beam of wherein exporting energy continuously shines by using the pulse of modulating matchingly with narrow zone.
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| US5953597A (en) * | 1995-02-21 | 1999-09-14 | Semicondutor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
| US6281546B1 (en) * | 1997-02-17 | 2001-08-28 | Denso Corporation | Insulated gate field effect transistor and manufacturing method of the same |
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| US5953597A (en) * | 1995-02-21 | 1999-09-14 | Semicondutor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
| US6281546B1 (en) * | 1997-02-17 | 2001-08-28 | Denso Corporation | Insulated gate field effect transistor and manufacturing method of the same |
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