CN100468601C - Electron emission source for field emission display and manufacturing method thereof - Google Patents
Electron emission source for field emission display and manufacturing method thereof Download PDFInfo
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- CN100468601C CN100468601C CNB2004100425991A CN200410042599A CN100468601C CN 100468601 C CN100468601 C CN 100468601C CN B2004100425991 A CNB2004100425991 A CN B2004100425991A CN 200410042599 A CN200410042599 A CN 200410042599A CN 100468601 C CN100468601 C CN 100468601C
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Abstract
This invention refers to electronic emission source of field emission display and making method thereof, which contains first substrate, cathode layer having porous made by crazing or lithography etching and with photoresistive protective layer on surface, coating low viscosity of carbon nano tube solution on said photoresistive protective layer and depositing in porous, vacuum sintering and removing the electron emission source layer formed in porous by photoresistive protective layer using etching, electron emission source containing cathode on first substrate, electron emission source layer deposited in porous, said invention has better flatness, raising image brightness uniformity and electronic beam density.
Description
Technical field
The present invention relates to a kind of electron emission source of field emission display and manufacture method thereof, relate in particular to a kind of electron emission source and manufacture method thereof of making Field Emission Display of CNT (carbon nano-tube).
Background technology
Though LCD (LCD) and plasma display panel (PDP) are present most popular thin-type display devices, yet they all exist the shortcoming that is difficult to overcome, the for example luminance shortage of LCD, shortcoming such as the visible angle scope is less, color saturation is not enough, bright spot, reaction speed are lower, the large size panel manufacturing is difficult for, PDP then has power consumption, high heat, ater shortcoming such as perform poor.Thereby this two class at present popular thin display still exist inborn defective, with regard to image quality, the level of the cathode ray tube (CRT) that still is difficult to reach commonly used.So occurred adopting the CRT basic principle Field Emission Display (Field Emission Display, FED).Its a plurality of anode and cathode unit that mainly adopts into arranged replaces electron gun and the phosphor screen of CRT, and can realize purpose of thinness under the situation that keeps the CRT high image quality, so claim that FED is that the rising star of thin display was not in fact.Though but the development of FED technology went through about 30 years, the still prematurity of its commercialization and the techniques of mass production, because nanometer technology flourish, (carbon nanotube, invention CNT) has just promoted the significantly progressive of FED technology to CNT (carbon nano-tube) up to recently.Nano carbon pipe field-emission display (Carbon Nanotube Field EmissionDisplay; CNT-FED) with CNT (carbon nano-tube) as electron emission source (negative electrode), not only kept the image quality of CRT, and had power saving and the little advantage of volume.The conducting electric field that has CNT (carbon nano-tube) simultaneously is low, emission is high and stable high characteristic, become have that driving voltage is low, luminous efficiency is high concurrently, the brand-new flat-panel screens of advantage such as no visual angle problem and power saving, large scale, low cost.
This Field Emission Display mainly is to utilize the cold cathode electron emission source to originate as electron beam, in order to replace the hot-cathode electric rifle of cathode ray tube.When Field Emission Display was placed in the electric field, the cold cathode electron emission source penetrated electron beam facing to the anode substrate that scribbles fluorescent material, thereby clashes into luminous.Therefore the use density that manufactures the CNT (carbon nano-tube) of electron emission source will directly influence the electron density of electron beam.And the surface of the cathode electrode of coating or connection CNT (carbon nano-tube) is also quite important, if the surface of cathode electrode is not good, made relatively electron emission source also can out-of-flatness, and then in electric field, will produce the homogeneity question of electronics emission, also can the uniformity of image and brightness be exerted an influence certainly.
Though have splendid electron beam launching effect as the electron emission source of Field Emission Display with CNT, but how tiny and numerous CNT is coated on and still has the improved place of many need on the minus plate, the manufacture method of known CNT electron emission source, generally be to use chemical vapour deposition technique (Chemical Vapor Deposition, CVD), screen painting (screen print), gold-tinted or electrophoresis etc., exist many to be solved and the problems that overcome in these fabrication schedules respectively.
In the manufacturing technology of known CNT (carbon nano-tube) electron emission source, the manufacturing technology of directly growing up with the CVD fabrication schedule, developed, appeared on the scene with single light shield and self-aligned technology manufacturing and launch the technology of micro cathode by scientists such as Milne, this technology can guarantee CNT (carbon nano-tube) and gate pin hole center conllinear.
This miniature magnetic field emitting module manufacture process is: at first making the lock pinhole diameter with technology such as little shadow, photoresistance and etchings on the layer structure that silicon substrate, metal level, silicon dioxide, polysilicon etc. constituted is little cave of 2 microns.Then, in little cave, use surface deposition nickel deposition titanium nitride (TiN) and nickel.Wherein acting as of TiN prevents that nickel is diffused into metal level under the required high temperature when the miniature magnetic field emitting module is grown up, and nickel then is catalyst.Then, the photoresistance on the flush away surface texture, centre leaves catalyst in little cave.At last, utilize CVD and suitable gas such as acetylene, ammonia etc. at high temperature, at little cave central authorities growing nano carbon pipe, about 1 micron of the diameter of growth scope.The growth finish after, have ten approximately in each little cave surplus a CNT (carbon nano-tube), the about 10-50 nanometer of its diameter, 0.4 micron of length.
Though this film-forming method can electron gain density height and the good electron emission source of uniformity of luminance, it is higher that but it opens the beginning electric field, more than greater than 5V/ μ m, and this manufacturing technology only can be applied on the Silicon Wafer (silicon wafer), and manufacturing cost is higher simultaneously.
Also can adopt coating to implement manufacture method and make the CNT (carbon nano-tube) electron emission source, mainly be to utilize wire mark or spraying technology to implement, promptly this CNT (carbon nano-tube) is arranged at random, dispersedly by wire mark or spraying technology with coating and is coated on cathode electrode surface, utilizes sintering technology that CNT (carbon nano-tube) is anchored at again and realizes the CNT (carbon nano-tube) electron emission source on the cathode electrode.This manufacture method, the profile pattern of this cathode electrode will seem more important, and the flatness and the electronics emission that can directly influence the CNT (carbon nano-tube) electron emission source of being finished because of this profile pattern are all spent; Therefore target electrode surface evenness requires highly, thereby its fabrication schedule relative complex, cost are also higher relatively.
The manufacture method of the known in addition electron emission source of implementing by fabrography, the technology of thick film wire mark particularly, be subject to the half tone structure, surface is obviously relatively poor relatively, therefore the structure flatness of made electron emission source is also relatively poor certainly, in concrete manufacturing, the height difference on top layer can reach more than the 10 μ m; In addition for making CNT (carbon nano-tube) can anchor on the cathode electrode surface, often must in CNT (carbon nano-tube) coating, add a large amount of set powders such as glass dust etc., thereby the density of the CNT (carbon nano-tube) that makes in the coating to be deposited reduces, cause the CNT (carbon nano-tube) density of made electron emission source lower, cause electrons emitted density to reduce.
Content of the present invention
An object of the present invention is to provide a kind of electron emission source and manufacture method thereof, can utilize low-viscosity CNT (carbon nano-tube) solution deposition in the hole of wire mark in negative electrode layer, even thereby the flatness of the not good electron emission source layer that does not still influence deposition and form of the flatness in negative electrode layer and hole, the surface that makes negative electrode layer no longer is directly to influence the smooth inhomogeneity factor of electron emission source laminar surface.
Another purpose of the present invention provides a kind of electron emission source and manufacture method thereof, utilize low-viscosity CNT (carbon nano-tube) solution deposition in the hole of negative electrode layer, and utilize vacuum sintering technique to obtain the CNT (carbon nano-tube) deposition cathode electrode layer that density increases, thereby improve the electron density of electron beam.
Another object of the present invention provides a kind of electron emission source and manufacture method thereof, utilizes the made electron emission source of this manufacture method, and section increases flatness and the density that CNT (carbon nano-tube) cloth is planted, thereby can be reduced to 10 μ A/cm with opening the beginning electric field
2Electric field 1.8V/ μ m, and reach 2.5V/ μ m at electric field and can produce 10mA/cm
2Current density.
For achieving the above object; the invention provides a kind of manufacture method of electron emission source; form on the surface of first substrate of negative electrode one; utilize wire mark or photolithography techniques manufacturing to form substrate and contain the negative electrode layer in hole, cave; utilize little shadow fabrication schedule to make the photoresistance protective layer at the cathode electrode laminar surface; again with low-viscosity CNT (carbon nano-tube) solution coat on above-mentioned photoresistance protective layer and be deposited in the hole, through vacuum-sintering and utilize etching technique to remove the photoresistance protective layer and form the electron emission source layer that has flat surfaces that is positioned at the hole.
In the manufacture method of electron emission source of the present invention, on first substrate wire mark after the negative electrode layer, also direct deposition low-viscosity CNT (carbon nano-tube) solution in the hole, and, obtain to have the electron emission source layer of flat surfaces through vacuum-sintering.
For achieving the above object, the invention provides a kind of electron emission source, comprise that one forms first substrate of negative electrode; Be formed on the negative electrode layer of first substrate surface with wire mark or etching technique,, be provided with the hole in the described negative electrode layer; Insert and be combined in the formed electron emission source layer that has flat surfaces in the hole with low-viscosity CNT (carbon nano-tube) solution, the combination of described low-viscosity CNT (carbon nano-tube) solution utilizes vacuum sintering technique to finish.
Compare with known electron emission source, thereby the density that electron emission source of the present invention has flatness preferably, can improve image and brightness uniformity and increased CNT (carbon nano-tube) helps the raising of electron beam electron density.
Brief description of drawings
Fig. 1 is the profile according to the electron emission source of one embodiment of the present of invention;
Fig. 2 is the manufacturing flow chart according to the electron emission source manufacture method of the first embodiment of the present invention;
Fig. 3 is the manufacturing flow chart according to the electron emission source manufacture method of the second embodiment of the present invention;
Fig. 4 is the manufacturing flow chart according to the electron emission source manufacture method of the third embodiment of the present invention.
The assembly conventional letter is listed as follows in the accompanying drawing:
First substrate, 1 negative electrode layer 2
Electron emission source layer 3 photoresistance protective layer 4
Hole 21
Embodiment
Below in conjunction with accompanying drawing content of the present invention is described in detail.
The invention provides a kind of electron emission source layer that has increased flatness and CNT (carbon nano-tube) density, thereby can improve image and brightness uniformity, and help to improve the electron beam electron density.Fig. 1 shows the cut-away view of the electron emission source of one embodiment of the present invention.As shown in Figure 1, the electron emission source of one embodiment of the present of invention comprises first substrate 1 that forms negative electrode, is manufactured on first substrate, 1 lip-deep negative electrode layer 2 with wire mark or etching technique, contains hole 21 in the negative electrode layer 2; Utilize low-viscosity CNT (carbon nano-tube) solution directly to insert and be combined in the electron emission source layer 3 that hole formation one has flat surfaces, utilize vacuum sintering technique to finish the combination of this low-viscosity CNT (carbon nano-tube) solution.
Insert negative electrode layer 2 and with before hole 21 combines at above-mentioned low-viscosity CNT (carbon nano-tube) solution; can further utilize the microimage manufacture method to make the photoresistance protective layer, so that low-viscosity CNT (carbon nano-tube) solution coat is reached in the hole 21 on the photoresistance protective layer on above-mentioned negative electrode layer 2 surfaces.After the combination, can further utilize the etching manufacture method to remove this photoresistance protective layer in vacuum-sintering, can in hole 21, form CNT (carbon nano-tube) equally with flat surfaces as electron emission source layer 3.
In specific embodiment, above-mentioned first substrate 1 adopts transparency carrier, can be glass substrate in other specific embodiment.2 of negative electrode layers can be made by silver (Ag), chromium (Cr) or indium tin oxide (ITO) etc.
In a preferred embodiment of the invention, about 0.1～10 μ m of thicknesses of layers of the negative electrode layer of making on first substrate, 1 surface 2.And be 5～10 μ m in the degree of depth in the hole 21 that negative electrode layer 2 forms.The length of CNT (carbon nano-tube) preferably is limited in below the 1 μ m.
The invention provides the method for making above-mentioned electron emission source.Below in conjunction with description of drawings make the step of several preferred embodiments of the manufacture method of above-mentioned electron emission source.
Fig. 2 a～Fig. 2 e has illustrated the manufacturing process of the electron emission source of first embodiment of the invention.The manufacture method of this electron emission source may further comprise the steps:
(a) shown in Fig. 2 a, provide first substrate 1 that forms negative electrode;
(b) the totem technology of utilizing wire mark on the surface of above-mentioned first substrate 1, forms negative electrode layer 2 with the metallic conduction made; Simultaneously, shown in Fig. 2 b, form hole 21 on these negative electrode layer 2 surfaces; Then
(c) shown in Fig. 2 c, utilize little shadow manufacture method to make the removable photoresistance protective layer 4 of one deck (PR) on above-mentioned negative electrode layer 2 surfaces;
(d) shown in Fig. 2 d, again with the low-viscosity CNT (carbon nano-tube) solution coat that deposits CNT (carbon nano-tube) on the surface of photoresistance protective layer 4, and insert in the hole 21 and deposition within it;
(e) shown in Fig. 2 e; utilize combination technology (as vacuum sintering technique) with unnecessary solvent removal in the low-viscosity CNT (carbon nano-tube) solution; utilize etching technique to remove the low-viscosity CNT (carbon nano-tube) solution on photoresistance protective layer 4 and surface again, thereby obtain to be combined in the electron emission source layer 3 that forms by the high density CNT (carbon nano-tube) in the hole 21.
In the preferred embodiment of the above-mentioned manufacture method of the present invention, about 0.1～10 μ m of thicknesses of layers of the negative electrode layer of making on first substrate, 1 surface 2.And the degree of depth in the hole 21 that forms on negative electrode layer 2 is 5～10 μ m.Little shadow is manufactured on about 1～2 μ m of thickness of the photoresistance protective layer 4 on negative electrode layer 2 surfaces.And the length that is deposited on the CNT (carbon nano-tube) in the low-viscosity CNT (carbon nano-tube) solution preferably is limited in below the 1 μ m.
In the preferred embodiment of above-mentioned manufacture method, the degree of depth in this hole 21 is at least 5 μ m, in the fabrication schedule of this specific embodiment of the present invention, can make CNT (carbon nano-tube) in hole 21, carry out certain deposition, again the low-viscosity solution of CNT (carbon nano-tube) is inserted in the hole 21, make the deposition surface of CNT (carbon nano-tube) in hole 21 obtain certain flatness, like this, even the flatness of the surface of above-mentioned negative electrode layer 2 and hole 21 bottom surface is bad, still can utilize the deposition of CNT (carbon nano-tube) in hole 21 of low-viscosity CNT (carbon nano-tube) solution to form smooth electron emission source layer.
Electron emission source manufactured according to the present invention, the flatness of its nano surface carbon pipe layer increases, and the emission of electron beam is also more even, thereby has also improved the uniformity of image or brightness.
In addition, again in the preferred embodiment of above-mentioned manufacture method, because CNT (carbon nano-tube) has very big length-width ratio (aspect ratio), the highdensity CNT (carbon nano-tube) of deposition in low-viscosity CNT (carbon nano-tube) solution, making highdensity CNT (carbon nano-tube) will weave mutually between deposition pins down and is combined in the hole 21, therefore, compare with known manufacture method, need not as known production method in the manufacture method of the present invention, adding a large amount of set powder (as glass dust etc.) in CNT (carbon nano-tube) coating with the set CNT (carbon nano-tube), only need utilize simple vacuum sintering technique that unnecessary removal of solvents in the low-viscosity CNT (carbon nano-tube) solution is got final product.And because do not need to add a large amount of set powders, thereby can not cause carbon pipe density to reduce, thus the CNT (carbon nano-tube) density that is deposited in the hole 21 is increased, help the raising of electron beam electron density.
Except the manufacture method of Fig. 2 a～Fig. 2 e, can also make electron emission source of the present invention by another preferred embodiment.The manufacture method flow process of this second preferred embodiment comprises successively provides first substrate 1, make negative electrode layer 2, make hole 21, make photoresistance protective layer 4, make CNT (carbon nano-tube) and removal photoresistance protective layer 4.Promptly utilizing photoresistance type dielectric coating to make negative electrode layer 2, further making holes 21 again, making photoresistance protective layer 4 more successively, make CNT (carbon nano-tube) and remove photoresistance protective layer 4 and finish the manufacturing of electron emission source on negative electrode layer 2 surface.Fig. 3 a～Fig. 3 e has illustrated these manufacturing steps successively.
The concrete manufacture method of this second preferred embodiment comprises following steps:
(a) shown in Fig. 3 a, be provided for forming first substrate 1 of negative electrode;
(b) shown in 3b figure, utilize photoresistance type dielectric coating to make negative electrode layer 2 with the wire mark manufacture method on above-mentioned first substrate 1 surface, simultaneously, adopt gray-level mask on the surface of negative electrode layer 2, to make the hole with the exposure imaging manufacture method; The photoresistance type dielectric coating that is used for forming negative electrode layer 2 is preferably photoresistance type elargol coating;
(c) shown in Fig. 3 c, utilize little shadow manufacture method to make the removable photoresistance protective layer 4 of one deck (PR) on above-mentioned negative electrode layer 2 surfaces;
(d) shown in Fig. 3 d, again with the low-viscosity CNT (carbon nano-tube) solution coat that deposits CNT (carbon nano-tube) on the surface of photoresistance protective layer 4, be filled in the hole 21 and deposition within it.
(e) shown in Fig. 3 e; utilize combination technology (as vacuum sintering technique) with unnecessary removal of solvents in the low-viscosity CNT (carbon nano-tube) solution; and highdensity CNT (carbon nano-tube) solution is combined in the hole 21, and the low-viscosity CNT (carbon nano-tube) solution on the photoresistance protective layer 4 that will be positioned at negative electrode layer 2 surfaces and surface is removed and is formed electron emission source layer 3 through etching.
Manufacture method according to above-mentioned second specific embodiment, can make equally and the identical electron emission source of above-mentioned manufacture method first specific embodiment, and the flatness of made electron emission source and the density of CNT (carbon nano-tube) etc. all have same splendid performance, are reflected as the raising of image and brightness uniformity and the raising of electron beam electron density.
Fig. 4 a is the 3rd preferred embodiment of manufacture method of the present invention to Fig. 4 c, and the manufacture method of this 3rd preferred embodiment comprises in regular turn provides first substrate 1, make the negative electrode layer 2, the manufacturing CNT (carbon nano-tube) that contain the hole.Be the low-viscosity CNT (carbon nano-tube) solution that direct sintering is inserted hole 21, and finish two electron emission sources that embodiment is identical with above-mentioned manufacture method.The 3rd preferred embodiment of manufacture method comprises following steps:
(a) shown in Fig. 4 a, first substrate 1 is provided, this first substrate 1 is transparency carrier or glass substrate;
(b) utilize the totem printing technology directly with the metallic conduction made on above-mentioned first substrate 1 surface, form negative electrode layer 2, simultaneously, form holes 21 (shown in Fig. 4 b) on these negative electrode layer 2 surfaces; Then
(c) the low-viscosity CNT (carbon nano-tube) solution that will deposit CNT (carbon nano-tube) is more directly inserted the hole 21 on negative electrode layer 2 surfaces, and deposition (shown in Fig. 4 c) within it;
(d) utilize combination technology (as vacuum sintering technique) with unnecessary solvent removal in the low-viscosity CNT (carbon nano-tube) solution, form electron emission source layer 3 and make highdensity CNT (carbon nano-tube) solution be combined in hole 21.
The made electron emission source that causes of manufacturing method according to the invention, the flatness of this electron emission source layer and the density of CNT (carbon nano-tube) all increase to some extent, thereby in the electron beam emission work of electron emission source, the beginning electric field that opens of this electron emission source can be by low to 10uA/cm
2Electric field 1.8V/ μ m, and when electric field reaches 2.5V/ μ m, can produce 10mA/cm
2Current density.
The invention provides a kind of electron emission source, must be appreciated that embodiment as herein described only is used for explaining and explanation, is absolutely not the restriction to claim of the present invention, in other embodiment described herein and application, all is not considered as within the scope of the invention.Though also it will be appreciated that this paper the specific implementations of electron emission source has been discussed, the structure that realizes identical functions is equally in scope of patent protection of the present invention.
Claims (16)
1. the manufacture method of an electron emission source of field emission display comprises:
First substrate of one formation negative electrode is provided;
Wire mark one negative electrode layer on the surface of described first substrate, and form a plurality of holes;
At negative electrode layer surface coverage one deck photoresistance protective layer;
With low-viscosity CNT (carbon nano-tube) solution coat on photoresistance protective layer surface and be deposited in the described hole;
Removal is coated on the low-viscosity CNT (carbon nano-tube) solution on photoresistance protective layer surface;
Vacuum-sintering is deposited on the low-viscosity CNT (carbon nano-tube) solution in the hole and forms smooth electron emission source layer.
2. manufacture method according to claim 1; it is characterized in that; the electron emission source layer that forms in described hole is removed the low-viscosity CNT (carbon nano-tube) solution on photoresistance protective layer and surface with etching technique; and after vacuum-sintering, form the electron emission source layer that has by the flat surfaces of high density CNT (carbon nano-tube) deposition.
3. manufacture method according to claim 1 is characterized in that, described hole is arranged in the negative electrode layer of wire mark at described first substrate surface.
4. manufacture method according to claim 1; it is characterized in that; the degree of depth that described hole is used for being coated with deposition low-viscosity CNT (carbon nano-tube) solution is determined according to negative electrode layer and the gross thickness that is manufactured on its surperficial photoresistance protective layer, is made the deposition surface of CNT (carbon nano-tube) in the hole have certain flatness.
5. manufacture method according to claim 1 is characterized in that, described photoresistance protective layer is manufactured on described cathode electrode laminar surface by little shadow manufacture method, and described photoresistance protective layer does not cover the surface in described hole.
6. manufacture method according to claim 1 is characterized in that, described low-viscosity CNT (carbon nano-tube) solution is the solution that does not increase the high density depositing nano carbon pipe of set powder.
7. the manufacture method of an electron emission source comprises:
First substrate of one formation negative electrode is provided;
The negative electrode layer that wire mark one is formed by photoresistance type dielectric coating on described first substrate surface, and make a plurality of holes;
At described negative electrode layer surface coverage one deck photoresistance protective layer;
Coating low-viscosity CNT (carbon nano-tube) solution and being deposited in the described hole on photoresistance protective layer surface;
Removal is coated on the lip-deep low-viscosity CNT (carbon nano-tube) of photoresistance protective layer solution;
Vacuum-sintering is described to be deposited on the low-viscosity CNT (carbon nano-tube) solution in the hole and to form smooth electron emission source layer.
8. manufacture method according to claim 7 is characterized in that, described photoresistance type dielectric coating is a photoresistance type elargol coating.
9. manufacture method according to claim 7 is characterized in that, described hole is to utilize gray-level mask to form pattern to be formed on the lip-deep of described negative electrode layer with the exposure imaging manufacture method again.
10. manufacture method according to claim 7; it is characterized in that; described hole is used for being coated with the degree of depth of deposition low-viscosity CNT (carbon nano-tube) solution; determine according to negative electrode layer and the gross thickness that is manufactured on its surperficial photoresistance protective layer, make the deposition surface of CNT (carbon nano-tube) in the hole obtain certain flatness.
11. manufacture method according to claim 7 is characterized in that, described photoresistance protective layer is manufactured on described cathode electrode laminar surface by little shadow manufacture method, and described photoresistance protective layer does not cover the surface in described hole.
12. manufacture method according to claim 7 is characterized in that, described low-viscosity CNT (carbon nano-tube) solution is the solution that does not increase the high density depositing nano carbon pipe of set powder.
13. the manufacture method of an electron emission source comprises:
First substrate of one formation negative electrode is provided;
Wire mark one negative electrode layer on the surface of described first substrate, and form a plurality of holes;
At negative electrode layer surface coverage one deck photoresistance protective layer;
With low-viscosity CNT (carbon nano-tube) solution coat on photoresistance protective layer surface and be deposited in the described hole;
Vacuum-sintering is deposited on the low-viscosity CNT (carbon nano-tube) solution in the hole and forms smooth electron emission source layer.
14. manufacture method according to claim 13 is characterized in that, described hole directly forms when the negative electrode layer wire mark is on described first substrate surface.
15. manufacture method according to claim 13 is characterized in that, it is the thickness of negative electrode layer that described hole is used to be coated with the degree of depth that deposits described low-viscosity CNT (carbon nano-tube) solution, makes the deposition surface of CNT (carbon nano-tube) in the hole obtain certain flatness.
16. manufacture method according to claim 13 is characterized in that, described low-viscosity CNT (carbon nano-tube) solution is the solution that does not increase the high density depositing nano carbon pipe of set powder.
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| CNB2004100425991A CN100468601C (en) | 2004-05-25 | 2004-05-25 | Electron emission source for field emission display and manufacturing method thereof |
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