CN100454553C - Thin film semiconductor device and method of manufacturing the same, electro-optical device, and electronic apparatus - Google Patents
Thin film semiconductor device and method of manufacturing the same, electro-optical device, and electronic apparatus Download PDFInfo
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- CN100454553C CN100454553C CNB2005100860668A CN200510086066A CN100454553C CN 100454553 C CN100454553 C CN 100454553C CN B2005100860668 A CNB2005100860668 A CN B2005100860668A CN 200510086066 A CN200510086066 A CN 200510086066A CN 100454553 C CN100454553 C CN 100454553C
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Abstract
The present invention relates to a film semiconductor device that is provided with a substrate and a semiconductor film that is formed on the substrate. An internal circuit (the main circuit part) (17), a protection circuit part (18) and a terminal part (19) are arranged on the substrate. The protection circuit part (18) is provided with protection circuit elements (181,182), a PIN diode that is provided with the semiconductor film, and a floating electrode that is arranged in the layer I of the PIN diode and opposite to an insulation film. The present invention can provide a film semiconductor device of a circuit element that can form a protection circuit that can well protect the internal circuit from being affected by surge voltage, results in no failure of circuit structure when destroyed by excessive voltage, and has excellent reliability.
Description
Technical field
The present invention relates to thin film semiconductor device and manufacture method thereof, electro-optical device, e-machine.
Background technology
In the past, in the electro-optical device of conductor integrated circuit device and active matrix mode, be provided with and be used to protect internal circuit to avoid the protective circuit of static.For example, in electro-optical device, at internal circuit such as pixel switch element and drive circuit and take out between the pad that electrode uses and be provided with protective circuit.Use the diode as protective circuit in the conductor integrated circuit device, electro-optical device uses the thin-film transistor (TFT) that is connected with diode.Its reason is that the TFT that is formed at the thin film semiconductive layer on the insulation board is used in formation in electro-optical device, and the PN junction that forms diode on thin film semiconductive layer, is difficult (for example, with reference to patent documentation 1.)。
Patent documentation: the spy opens flat 6-51346 communique.
Fig. 9 (a) is that expression utilizes diode to connect the circuit structure diagram of the protective circuit of TFT, (b) is the general profile chart that same diode connects TFT.Shown in Fig. 9 (a), insert 2 resistive element R1, R2 between connection pads 219 and the internal circuit 217, and, in connection pads 219b (Vdd) and circuit that 219c (Vss) is connected, insert a diode respectively and connect TFT30D in the centre of these resistive elements R1 and R2.Referring to the cross-section structure shown in Fig. 9 (b), diode connects TFT30D and comprises: be formed at the semiconductor film 201 on the substrate 211, with this semiconductor film 201 between the relative gate electrode 213a of gate insulating film 212, be arranged at the source electrode 208 that the inside of dielectric film 212 and 216 connecting hole is connected with semiconductor film 201 by perforation, and drain electrode 209.Therefore, make by perforation and be arranged at short circuit between connection electrode 213d that the connecting hole of dielectric film 216 is connected with grid 213a and the drain electrode 209, constitute the TFT of diode syndeton.
On the basis of such structure, if during from the positive surge voltage of connection pads 219a input, connecting among the TFT30D at diode has current i to flow through, and can not prevent to flow into excessive electric current to internal circuit 217.
As the protective circuit of above-mentioned structure in, if when in protective circuit, connecting TFT, have the advantage that the operation that can utilize the TFT that constitutes internal circuit forms protective circuit with diode.Yet in this structure, shown in Fig. 9 (b), if import to surpass the withstand voltage surge voltage that diode connects TFT30D, diode connects among the TFT30D, is that the gate insulating film 212 of thin layer dielectric film forms short circuit line bd because of electric charge connects.If form this short-circuit condition, from the source region 201b of semiconductor film 201 by short circuit line bd and gate electrode 213a conducting.As a result, drain electrode 209 that is connected with gate electrode 213a and source electrode 208 become conducting state.So the connection pads 219 shown in Fig. 9 (a) and other connection pads 219b and even 219c become conducting, because connection pads 219a can not work orderly, semiconductor device self can produce fault.
Summary of the invention
The present invention be directed to above-mentioned prior art problems makes; its purpose is for providing a kind of thin film semiconductor device and manufacture method thereof; described thin film semiconductor device has the protective circuit that can avoid the surge voltage influence to the internal circuit good protection; for because of can not producing fault in the ruined situation circuit structure of excessive voltage, and has the circuit element of superior in reliability.
For addressing the above problem; the invention provides a kind of thin film semiconductor device; comprise the semiconductor film that forms on matrix and this matrix; it is characterized in that; main circuit portion with semiconductor element is set on the described matrix, by this extended portion of terminal of main circuit portion, insert the protective circuit portion between described main circuit portion and the portion of terminal; described protective circuit portion is provided with the protective circuit element; described protective circuit element comprises: have the PIN diode of described semiconductor film, and between the floating electrode of the I layer subtend configuration of dielectric film and this diode.
Described PIN diode is to have the diode that is divided into as the semiconductor film of known P layer (p type semiconductor layer), I layer (intrinsic-OR micro-concentrations ground imports the semiconductor layer of impurity) and N layer (n type semiconductor layer).In addition, the conducting film of floating electrode and other electric control or the component parts of semiconductor layer are not connected, and become the electrode of the state that electricity " floats ".
In the protective circuit element that thin film semiconductor device of the present invention possesses; because the floating electrode that possesses PIN diode and dispose with its I layer subtend; thereby flow through the protective circuit element for excessive electric current; the occasion of the destroyed and electric perforation of gate insulating film, P layer of PIN diode (or N layer) and floating electrode become short network structure.Yet, because floating electrode is not connected by the conductive layer of electric control or semiconductor layer with other, even the protective circuit element also can be guaranteed the insulating properties of PIN diode after destroyed.Therefore; use above-mentioned protective circuit element to constitute protective circuit if constitute; a kind of thin film semiconductor device can be provided, and it can constitute the electrostatic discharge protective circuit of the surge voltage that bypass well causes because of static, and input is enough to endure after the surge voltage of breakdown protection circuit element.
In addition, for the occasion that above-mentioned floating electrode is set and does not establish above-mentioned floating electrode, it is very big to obtain backward protective value difference.So good semiconductor layer does not have the state of floating electrode like that, even to the voltage corresponding to puncture voltage protective value can not be arranged, and by floating electrode is set, the electric current that also can take place slightly leaks.Even if even, also can have defencive function for the reverse surge voltage of the slight negative effect that the TFT device is brought that causes thus.
Described protective circuit element even flow through and ruined occasion for super-high-current, also can be guaranteed the insulating properties of body.For this reason; if the protective circuit portion that possesses this protective circuit element is set; import excessive surge current by portion of terminal; even because of this electric current makes the protective circuit element destroyed; with in the past to connect the protective circuit element that TFT constitutes by diode different, the circuit structure of splicing ear portion and main circuit portion can not change yet.Therefore, can provide after the surge voltage that a kind of importing is enough to the breakdown protection circuit element also by the present invention can operate as normal, high reliability and long-life thin film semiconductor device.
In the thin film semiconductor device of the present invention, being preferably the semiconductor film of the described PIN diode of formation and the semiconductor film of the semiconductor element of the described main circuit of formation portion is the semiconductor film that the same one deck on described matrix forms.If make this structure,, can realize improving the reliability of thin film semiconductor device and the influence of not made process variations because the semiconductor element and the PIN diode of main circuit portion can form in same operation.
In thin film semiconductor device of the present invention, the conducting film that the described semiconductor element that is arranged at described main circuit portion is thin-film transistor, constitute the conducting film of described floating electrode and constitute the gate electrode of described thin-film transistor is preferably makes the structure that forms with one deck on described matrix.By this structure, can obtain the thin-film transistor of main circuit portion and the advantage that the protective circuit element can form in same operation.
In the semiconductor device of film of the present invention, the rough same position of I layer when overlooking that is preferably described floating electrode and described PIN diode forms.By this structure, described floating electrode is used as the mask mask by import impurity in semiconductor film, owing to can therefore become the protective circuit element that available simple procedures is made from the transistorized I layer of coupling ground formation PIN.In relevant structure, if in main circuit portion, be provided with thin-film transistor, since can with the grid of thin-film transistor as the mask mask, form with coupling ground certainly in the operation of channel region and form the transistorized I layer of described PIN simultaneously, thereby can become and make the better thin film semiconductor device of efficient.
In the thin film semiconductor device of the present invention, also can be to be the structure that between its P layer and I layer or N layer and I layer, has the low concentration impurity zone lower in described PIN diode than this P layer or N layer impurity concentration.The same with common semiconductor device, in being located at the thin-film transistor of thin film semiconductor device, the deterioration for the electrical characteristic that prevents to be caused by hot carrier adopts LDD (LightlyDoped Drain) structure more.Therefore, if adopt the PIN diode of this structurally associated,, can seek the generalization of manufacturing process effectively for the situation that forms described protective circuit element with the thin-film transistor of above-mentioned LDD structure simultaneously.Can provide electrical characteristic better, can further improve the protective circuit element withstand voltage, that reliability is high of PIN diode.
In thin film semiconductor device of the present invention, described low concentration impurity zone can be with described floating electrode plane on the structure that forms of the zone that overlaps.If make such structure, the thin-film transistor of main circuit portion is the device with GOLDD (Gate Overlapped Lightly Doped Drain) structure, can commonization manufacturing process, and can further improve the withstand voltage of PIN diode.
In the thin film semiconductor device of the present invention, also can be the structure of superposed part on a part of plane that has with the P layer of described PIN diode or N layer between the floating electrode of the I of dielectric film and described PIN diode layer subtend configuration.
If make such structure, unnecessary be confined to with semiconductor film part plane on with overlapping the floating electrode of configuration as mask carries out to semiconductor film that impurity imports so-called from coupling the method for formation channel region.Therefore, also can be used in the photoresist that pattern forms on the common dielectric film and carry out in semiconductor film, importing impurity, in such occasion, can improve the degree of freedom of manufacturing process as mask.That is, can make main circuit and protective circuit element with common manufacturing process, also can be with other operation manufacturing.Even corresponding to manufacturing process's difference of this situation, the electrical characteristic of resulting protective circuit element can be according to aforesaid reproduction, but can not say and change.
In the thin film semiconductor device of the present invention, described protective circuit element is preferably and directly is connected described portion of terminal.
As shown in Figure 9, use diode in the past to connect TFT, between connection pads 219a and diode connection TFT30D, be provided with resistive element R1 as in the protective circuit of protective circuit element.This resistive element R1 is the element that is formed by common N type or p type semiconductor layer, can play the function that rapid voltage that inhibition causes by the surge that imports from connection pads 219a rises, and is the device that the protection diode connects TFT30D.Even when diode connects the destroyed and conducting of TFT30D, play the effect of avoiding power line Vdd or Vss and connection pads 219a direct short-circuit.In contrast, in the thin film semiconductor device that the present invention relates to, even as the protective circuit element of previous record destroyed since pad 219a also not can with power line Vdd or Vss direct short-circuit, thereby can guarantee the conducting of portion of terminal and main short circuit portion.Opposite; if insert resistive element between protective circuit element and portion of terminal, under the excessive situation of the surge voltage of being imported, this resistive element is destroyed; owing to break between portion of terminal and the internal circuit portion, the thin film semiconductor device cisco unity malfunction that becomes.Therefore, adopt protective circuit element and the direct-connected structure of portion of terminal, even become the thin film semiconductor device that the voltage that imports the element that is enough to breakdown protection circuit portion is also guaranteed the operate as normal of main circuit portion as this structure.
The manufacture method of thin film semiconductor device of the present invention; it is the manufacture method that has matrix and be formed at the thin film semiconductor device of the semiconductor film on this matrix; it is characterized in that; described thin film semiconductor device is provided with on matrix has semiconductor element main circuit portion; by this extended portion of terminal of main circuit portion; insert the protective circuit portion of described main circuit portion and portion of terminal; the operation that forms described protective circuit portion comprises that the protective circuit element forms operation, and described protective circuit element forms operation and comprises: the operation that forms semiconductor film on matrix; on described semiconductor film, form the operation of dielectric film; by form at pattern on the described dielectric film conducting film form with described semiconductor film plane on the operation of the floating electrode that overlaps; by being that mask imports impurity and is formed on this semiconductor film and forms the P layer with described floating electrode in described semiconductor film; the operation of the PIN diode of N layer and I layer.By this manufacture method; owing to import each layer that impurity forms PIN diode as mask to semiconductor film with described floating electrode; thereby can form efficient height, protective circuit element that reliability is good, and can make the thin film semiconductor device of high reliability easily and efficiently.
By this manufacture method, thereby can make thin film semiconductor device easily and efficiently, the thin film semiconductor device that the surge voltage that can protect main circuit portion to avoid being imported by portion of terminal well influences with outside connection electronics.
The manufacture method of thin film semiconductor device of the present invention; can make following method: described main circuit portion contain comprise semiconductor film and with the thin-film transistor of described semiconductor film between the gate electrode of dielectric film subtend; the semiconductor film that constitutes the semiconductor film of described thin-film transistor and constitute described protective circuit element forms in same operation, and the floating electrode that constitutes the gate electrode of described thin-film transistor and constitute described protective circuit element forms in same operation.In addition, in the manufacture method of thin film semiconductor device of the present invention, be preferably the source electrode of described thin-film transistor or the P layer or the N layer of drain electrode and described PIN diode, import operation by same impurity and form.
By this manufacture method, can make the thin-film transistor that constitutes described main circuit portion and protective circuit element with same operation manufacturing, can make the good thin film semiconductor device that is not subjected to high reliability that the change of manufacturing process is in the past influenced.
In the manufacture method of thin film semiconductor device of the present invention; import in the operation at described impurity; the semiconductor film of the semiconductor film of described thin-film transistor and described protective circuit element, the low concentration impurity field of the impurity ingress area low impurity concentration that connects near can forming.By relevant manufacture method, the protective circuit element that possesses the thin-film transistor of LDD structure and have a withstand voltage structure more than the described PIN diode can form in identical operation.
In the electro-optical device of the present invention, it is characterized in that, contain previous described thin film semiconductor device.The thin film semiconductor device that previous the present invention is correlated with can be as the tft array substrate of the electro-optical device of active matrix mode.In relevant tft array substrate, use TFT as the switch element of the pixel of composing images viewing area, in addition, be arranged at and also form the inverter that uses TFT etc. in the drive circuit of fringe region.In addition, also be provided as the portion of terminal of external connection terminals.Therefore; structure of the present invention is if be applicable to relevant tft array substrate; the switch element and the drive circuit of the above-mentioned image display area that constitutes internal circuit can be protected by protective circuit portion well, long electro-optical device of good life-span of reliability can be constituted.
Next, e-machine of the present invention is characterized in that, has the electro-optical device of before being put down in writing of the present invention.By this structure, the protective circuit with influence such as the excessive voltage of can avoiding surge voltage to the internal circuit good protection can be provided, and the e-machine with display part that reliability is good, the life-span is long.
Description of drawings
The protective circuit structure chart of the thin film semiconductor device that Fig. 1 first embodiment of the invention is relevant.
The plane structure chart and the sectional structure chart of the protective circuit element that Fig. 2 first embodiment of the invention is relevant.
Fig. 3 represents the figure of the liquid crystal indicator that embodiments of the present invention are relevant.
Fig. 4 liquid crystal indicator circuit structure diagram of the present invention and thin-film transistor (TFT) cutaway view.
The general profile chart of the protective circuit element that Fig. 5 second execution mode of the present invention is relevant.
The general profile chart of the protective circuit element that Fig. 6 the 3rd execution mode of the present invention is relevant.
The general profile chart of the protective circuit element that Fig. 7 the 4th execution mode of the present invention is relevant.
Fig. 8 represents the three-dimensional structure diagram of an example of e-machine.
Fig. 9 represents the figure of the protective circuit of thin film semiconductor device in the past.
The figure of the TLP characteristic of the PIN diode of the floating electrode that Figure 10 represents relatively to have, no the present invention is correlated with.
The protective circuit structure chart of other thin film semiconductor devices that Figure 11 the present invention is correlated with.
The figure of the electrical characteristic of the PIN diode of the low concentration region that Figure 12 represents relatively to have, no the present invention is correlated with.
Among the figure: 11-substrate (matrix); 2-the 1st dielectric film (gate insulating film); 6-the 2nd dielectric film (interlayer dielectric), 181a-PIN diode, 118p-p layer; the 118n-N layer; the 118i-I layer, 118s-semiconductor film, 118g-floating electrode; 181,182,281,381,481-protective circuit element (thin-film semiconductor component), 218n, 318n-low concentration impurity field.
Embodiment
[first execution mode]
Following with reference to the description of drawings embodiments of the present invention.Present embodiment exemplarily illustrates the basic structure of the thin film semiconductor device that the present invention is correlated with and the electrooptic cell of thin film semiconductor device is installed.
(thin film semiconductor device)
Fig. 1 is the summary construction diagram that the circuit of expression the present invention thin film semiconductor device of being correlated with constitutes.As shown in Figure 1, the thin film semiconductor device of present embodiment comprises internal circuit (main circuit portion) 17, protective circuit portion 18 and portion of terminal 19.Portion of terminal 19 is provided with a plurality of connection pads 19a～19c.Between these connection pads 19a～19c and internal circuit 17, insert protective circuit portion 18.Connection pads 19b, 9c be the power supply input terminal (Vdd, Vss).
In addition, an end (cathode side) of protective circuit element 181 is connected with connection pads 19b (Vdd) as power input terminal by signal routing.One end (anode-side) of protective circuit element 182 is connected with connection pads 19c (Vss) by signal routing.
Fig. 2 (a) is the plane structure chart of the concrete structure example of expression shown in Figure 1 181, and Fig. 2 (b) is the sectional structure chart along the A-A line of Fig. 2 (a).
In addition, in Fig. 2, only show the major part of protective circuit portion 181, omitted wiring that is connected on the similar elements etc.In addition, the opposing party's protective circuit element 182 also has with the identical structure of protective circuit element 181.
As shown in Figure 2, the protective circuit element 181 that present embodiment is relevant comprise PIN diode 181a and with a part of plane of this PIN diode 181a on overlap the floating electrode 118g of configuration.PIN diode 181a comprises semiconductor film 118s and a plurality of (shown in the figure being 4) the anode electrode 118a that are connected with semiconductor film 118s and a plurality of (shown in the figure being 4) cathode electrode 118c.On semiconductor film 118s, be formed with P layer 118p, N layer 118n and be disposed at I layer 118i between them, anode electrode 118a conduction is connected on the P layer 118p, and cathode electrode 118c conduction is connected on the N layer 118n.And floating electrode 118g is configured among the I layer 118i of PIN diode 181a relatively.
Referring to Fig. 2 (b) cross section structure, on substrate 11, be formed with such as the film formed semiconductor film 118s of polysilicon, be formed with the 1st dielectric film 2 that covers semiconductor film 118s such as silica formation.On the 1st dielectric film 2, form by the floating electrode 118g that forms such as aluminium, tantalum, molybdenum, polysilicon etc., form the 2nd dielectric film 6 that covers floating electrode 118g.Therefore, in the connecting hole that arrives the semiconductor film 118s that connects the 2nd dielectric film 6 and the 1st dielectric film 2, embedding have anode electrode 118a and cathode electrode 118c, and be electrically connected with P layer 118p and N layer 118n respectively.
The floating electrode 118g that described protective circuit element 181 is included shown in Fig. 2 (b), is formed by the conducting film that is embedded between the 1st dielectric film 2 and the 2nd dielectric film 6, and other elements of getting along well connect, and are also earth-free, obtain the electrode of any current potential.
In addition, internal circuit 17 shown in Figure 1, the same with protective circuit portion 18, contain and utilize the film formed semiconductor element of thin film semiconductor that is formed on the substrate, be the structure that contains such as TFT (thin-film transistor).
If thin film semiconductor device by present embodiment with said structure; by possessing the protective circuit portion 18 of protective circuit element 181, can protect internal circuit 17 to avoid influence well by positive surge voltage such as the static that imports such as pad 19a.That is to say that if import surge voltage from connection pads 19a, flow through electric current between the PIN diode 181 and 182, surge current is bypassed to the power input terminal side, stop internal circuit 17 effluents to cross super-high-current.
In addition, even the thin film semiconductor device of present embodiment is exceeded the situation that withstand voltage surge voltage is destroyed for protective circuit element 181,182, it is undesired that the electrical connection between internal circuit 17 and the connection pads 19a can not produce yet.This is can not getable advantage in the protective circuit of using diode connection TFT in the past.
If specifically describe by protective circuit element 181 shown in Figure 2; for protective circuit element 181 ruined situations with floating electrode 118g; the same with diode connection electrode TFT30D shown in Figure 9; insulate film formed the 1st dielectric film 2 because of connecting the electric charge deterioration by thin layer, and the situation that becomes short-circuit condition between the P layer 118p of PIN diode 181a (or N layer 118n) and the floating electrode 118g is more.And; in this short-circuit condition; connecting TFT30D with in the past diode, to become conducting state corresponding; become short circuit in the protective circuit element 118 that present embodiment relates between P layer 118p and the floating electrode 118g; owing to be not electrically connected between floating electrode 118g and other structure devices, can not produce short circuit between the anode electrode 118a of PIN diode 181a and the cathode electrode 118c.Therefore, the protective circuit element 181 after the destruction is as simple insulator work.Thereby, keep the structure that circuit connects between pad 19a and the internal circuit 19, even after surpassing the withstand voltage surge voltage importing of protective circuit, thin film semiconductor device can not produce fault yet and normally works.
In addition, even the protective circuit element of present embodiment for rightabout surge voltage, also can produce same effect.Figure 10 is TLP (the transmission line pulse) measurement result that has or not the PIN diode of floating electrode.Transverse axis is represented the load voltage of protective circuit element round about.The longitudinal axis represents to flow through this moment the electric current of protective circuit element.In addition, solid line is the situation that floating electrode is arranged among the figure, and dotted line is the situation that does not have floating electrode.Can understand that from this figure in the zone of load voltage above 20V, the slope of a curve with diode of floating electrode becomes big.That is to say, even present embodiment to rightabout voltage, also has the current characteristics of underload voltage regime.Therefore, utilize the protection component of present embodiment, and though for be positive direction or reciprocal low surge voltage all can form the protective circuit that forms bypass.By the present invention, can bring into play the protective value of bipolarity protection component.
In addition; thin film semiconductor device with the protective circuit portion 18 that can reach above-mentioned action effect; as shown in figure 11, also resistive element 18b shown in Figure 1 can be set and constitute, make between protective circuit element 181,182 and the connection pads 19a by wiring 23 direct-connected structures.Resistive element 18b for when pad 19a imports surge voltage, suppresses the rapid rising of voltage in the circuit, plays the effect of protective circuit, and for the situation that imports excessive surge voltage, even resistive element 18b is also destroyed, produces broken string sometimes.Therefore, if such resistive element 18b broken string, connection pads 19a and internal circuit 17 disconnect, and the work of thin film semiconductor is brought fault.To this; if make protective circuit element 181,182 is set; and the structure of resistive element 18b is not set; even for making the ruined occasion of protective circuit element because of excessive surge voltage imports; because connection pads 19a and internal circuit 17 are guaranteed conducting; therefore can not cause that thin film semiconductor device self can't work because of the destruction of protective circuit portion 18, can prolong the life-span of thin film semiconductor device.
(electro-optical device)
In the semiconductor device that above-mentioned the present invention is correlated with, can constitute active array type (active-matrix-type) device.Below, as an example of the electro-optical device that contains thin film semiconductor device shown in Figure 1, the transmission type liquid crystal display device of active matrix mode is described.
Fig. 3 (a) is the vertical view of the liquid crystal indicator of explanation present embodiment from each element and the observation of subtend subtend substrate-side, and Fig. 3 (b) is the cutaway view of Fig. 3 (a) along H-H ' line.In addition, in each of the drawings used in the following description, in order to make each layer and each device reach the size of the degree of can recognizing on drawing, each layer has different engineer's scales with each device.
The liquid crystal indicator 10 of present embodiment, shown in Fig. 3 (a) and (b), have the tft array substrate 11 (matrix) and the subtend substrate 12 that form by transparency carrier and fit, in the space of being cut apart by encapsulant 13, enclose the structure of liquid crystal layer 14 by encapsulant 13.The general central part of tft array substrate 11 forms image display area 17c.Fringe region 16 in its outside is provided with data line drive circuit 17a along the zone (being the limit along directions X in Fig. 3) on a long limit of tft array substrate 11.Data line drive circuit 17a is by forming with the unit circuit (figure slightly) of the pixel count similar number of the directions X of image display area 17c.On the other hand, in the both sides of image display area 17c, be respectively equipped with two scan line drive circuit 17b along the zone (in Fig. 3, being limit) of two minor faces of tft array substrate 11 along the Y direction.And, many wirings 22 are set, with the scan line drive circuit 17b and the 17b of the both sides that are connected in image display area 17c on a remaining limit of tft array substrate 11.
In addition, at limit end, be set to row are used for connecting FPC on this tft array substrate 11 a plurality of connection pads 19a with prescribed distance along directions X near tft array substrate 11 data line drive circuit 17a.Therefore, between these connection pads 19a and data line drive circuit 17a, be provided with protective circuit portion 18.Pass through protective circuit portion 18 with data line drive circuit 17a, scan line drive circuit 17b, 17b by extended many wirings 23,24 of connection pads 19a, and connection pads 19a is electrically connected.
Thereby in the liquid crystal indicator 10 of present embodiment, data line drive circuit 17a and two scan line drive circuit 17b and image show that field 17c is equivalent to the structural element of internal circuit shown in Figure 1 (main circuit portion) 17.Become the same 19a connecting portion 19 of this internal circuit, by the structure of protective circuit portion 18 electrical connections with a plurality of connection pads.
In addition; as depicted in figs. 1 and 2; data line drive circuit 17a and connection pads 19a ... between the protective circuit portion 18 that is provided with are electrostatic discharge protective circuits that protective circuit element 181,182 is formed as main body; by protective circuit element 181,182 bypass surge currents, to protect pixel switch element and drive circuit 17a, the 17b that in image display area 17c, forms.In addition, in the present embodiment, the left side of protective circuit portion 18 in image display area in image display area 17c with and the right side with being provided with two.
In addition, in the bight of subtend substrate 12, dispose conductive material 25 (conducting portion up and down) between the substrate that is used for conduction between tft array substrate 11 and the subtend substrate 12.Be provided with common electrode (figure slightly) at subtend substrate 12.The wiring 32 that is used to this common electrode to supply with common current potential is provided with on the tft array substrate 11 by conductive material between substrate 25, is configured in the most peripheral position of tft array substrate 11.The composed component of enclosing symbol 9 and illustrate on Fig. 3 (b) is each set pixel electrode of each pixel in the image display area 17c.
Next, be the circuit structure diagram of liquid crystal indicator 10 at Fig. 4 (a).Figure (b) is the figure of the summary sectional structure of the TFT30 shown in the presentation graphs (a).Shown in Fig. 4 (a), many data wire 6a that forming on 10 image display area 17c of liquid crystal indicator crosses one another extends and scan line 3a, in the rectangular-shaped zone that surrounds by data wire 6a and scan line 3a, pixel X is set, a pixel only is shown among Fig. 4, in the 17c of pixel display area territory, a plurality of pixel X are rectangular configuration when overlooking.
In each pixel X, corresponding to the position of data wire 6a and scan line 3a intersection, be provided as the TFT30 of pixel switch element, scan line 3a is connected on the grid of TFT30, and data wire 6a is connected on source electrode, connects the pixel electrode 9 that liquid crystal layer 14 is applied electric field in the drain electrode.In addition, be connected to the reservoir capacitor 70 with pixel electrode 9 parallel connections, be connected on the electric capacity line 3b with the electrode of pixel electrode 9 opposite sides.
If only with reference to the sectional structure of the TFT30 shown in Fig. 4 (b), form semiconductor film 1a on the TFT base plate array 11, form the gate insulating film (the 1st dielectric film) 2 that covers semiconductor film 1a, form between gate insulating film 2 gate electrode (scan line) 3a relative with semiconductor film 1a.Semiconductor film 1a has source region 1b, drain region 1c and channel region 1a '.In semiconductor film 1a, channel region 1a ' is relative with gate electrode 3a.Form the interlayer dielectric (the 2nd dielectric film) 6 of cover gate electrode 3a and gate insulating film 2, at the source region 1b of the semiconductor film 1a that connects this interlayer dielectric 6 and gate insulating film 2 and the connecting hole that drain region 1c is provided with arrival.Be electrically connected by described connecting hole data wire 6a and source region 1b, pixel electrode 9 and drain region 1c are electrically connected.This TFT30 can be any one of P channel-type, N channel-type.
Fig. 4 (c) is the general profile chart that is provided with the inverter (CMOS-TFT) 117 of data line drive circuit 17a and scan line drive circuit 17b.Inverter 117 has P channel TFT 117P and N channel TFT 117N passes through the interconnective structure of electrode (lead-out terminal) 117c.TFT117P, TFT117N use the semiconductor film 117s that forms on the tft array substrate 11 to form respectively.Gate insulating film 2 that gate electrode (input terminal) 117g forms between covering semiconductor film 117s and the configuration of semiconductor film 117s subtend.
In the present embodiment; the semiconductor film 1a of TFT30 shown in Fig. 4 (b); the semiconductor film 117s of the inverter 117 shown in Fig. 4 (c), and the semiconductor film 118s of the protective circuit element 181 shown in Fig. 2 (b) all are to utilize on the tft array substrate 11 to form with the semiconductor film of layer formation.In addition, 117 gate electrode 117g of the gate electrode 3a of TFT30, inverter, the floating electrode 118g of protective circuit element 181 all utilizes the conducting film that is formed at the gate insulating film (the 1st dielectric film) 2 that covers above-mentioned semiconductor film and form to form.Therefore, any semiconductor element, the zone that overlaps on same semiconductor film, gate electrode (or floating electrode) plane is intrinsic semiconductor region or the zone that imports micro-concentrations impurity, is provided with channel region 1a ', I layer 118i etc.
In the liquid crystal indicator 10 of the present embodiment of said structure; owing to possess the structure of aforesaid thin film semiconductor device, can avoid image by protective circuit portion 18 protection internal circuits (data line drive circuit 17a, scan line drive circuit 17b, and image display area 17c) by the surge voltage of connection pads 19a importing.By this, become when making and be difficult to produce internal circuit when using and destroy long-life liquid crystal indicator with superior in reliability.In addition, in protective circuit portion 18, have following advantage: connection pads 19a short circuit does not each other take place in the ruined situation of PIN diode yet even surpass the withstand voltage of PIN diode that this kind structure is arranged for input.Have and do not produce the abnormal effect of liquid crystal indicator work.
In addition; as mentioned above; the semiconductor element that liquid crystal indicator 10 is possessed (TFT30, inverter 117 and protective circuit element 181); owing to commonly make on conducting film the structure between dielectric film and the configuration of semiconductor film subtend, thereby the formation operation of the formation operation of semiconductor film 1a, 117s, 118s and gate electrode 3a, 117g, floating electrode 118g can be made general operation.In addition, even when semiconductor module imports impurity, gate electrode 3a, 117g and floating electrode 118g are carried out the impurity injection as mask to semiconductor film, the I layer of transistorized channel region and PIN diode can form from coupling ground.
Thereby; in the liquid crystal indicator 10 of present embodiment; protective circuit portion 18 as the electrostatic discharge protective circuit function of the data line drive circuit 17a, the scan line drive circuit 17b that constitute internal circuit and image display area 17c; can side by side form operation and form, can when not making manufacturing process complicated, improve the reliability of display unit by internal circuit.
(second execution mode)
Next, relevant second execution mode of the present invention is described.Fig. 5 is the general profile chart of the relevant protective circuit element that thin film semiconductor device possessed of second execution mode.Fig. 5 is the figure that is equivalent to Fig. 2 (b) of the 1st previous execution mode, the protective circuit element 181 shown in same Fig. 2 of planar structure (a) of the protective circuit element 281 that present embodiment is relevant basic identical.
Figure 12 is with according to the voltage-current characteristic of the protective circuit element of present embodiment with according to the figure of the comparison of the protective circuit element of first execution mode.In addition, transverse axis is to apply voltage, and the longitudinal axis is an electric current.Solid line among the figure represents that dotted line is represented the characteristic according to the protection component of second execution mode that has low concentration region between I layer, N layer according to the characteristic of the protection component of first execution mode that does not have low concentration region at I layer, N interlayer.According to this figure, dotted line extends to more than the 15V, this shows that the withstand voltage of protective circuit element of present embodiment improved.Be provided with the low concentration impurity zone at the I of such PIN diode layer, N interlayer or I layer, P interlayer.In the time of withstand voltage the uprising of protective circuit element, the withstand voltage increase of protective circuit, reliability is higher.
Like this, at the TFT that is used for pixel switch element and drive circuit, for suppressing to make electrical characteristic (threshold value V because of in gate insulating film, injecting hot carrier
Th, transefer conductance gm, drain current I
DsDeng) change, adopt LDD (the Lightly Doped Drain) structure that resistive formation nearby is set in drain electrode, to relax the electric field of channel boundary.Therefore; the PIN diode 218n relevant as present embodiment; by make the structure that low concentration impurity zone (high resistance area) 218n is set between I layer 118i and N layer 118n; the protective circuit element 181 that relates to the first previous execution mode is the same, can easily form with identical operation with internal circuit TFT.
(the 3rd execution mode)
Next, relevant the 3rd execution mode of the present invention is described.Fig. 6 is the general profile chart of the relevant protective circuit element that thin film semiconductor device possessed of the 3rd execution mode.Fig. 6 is the figure that is equivalent to Fig. 2 (b) of the first previous execution mode, the protective circuit element 181 shown in same Fig. 2 of planar structure (a) of the protective circuit element 381 that present embodiment is relevant basic identical.
The structure of such protective circuit element 381 becomes the similar structures of the TFT of (the GateOverlapped Lightly Doped Drain) structure that has so-called GOLDD.Thereby; constitute the TFT of internal circuit; so to having under this GOLDD structure situation; even for the PIN diode 381a that constitutes the protective circuit element; if make the structure of low concentration impurity zone 318n to dispose with coincidence ground on the floating electrode plane as present embodiment; also can easily form the protective circuit element with identical operation, and also can form with the same high withstand voltage PIN diode of second execution mode with internal circuit.
In addition, for the situation that forms the GOLDD structure, metal film by double-layer structure forms such as gate electrode, the area structure narrower than the metal film of lower layer side of the upper layer side of this grid (opposition side of semiconductor film) metal film imports impurity as mask to semiconductor film with relevant gate electrode simultaneously.At that rate, corresponding to the zone that the metal film of the relative upper layer side of metal film of above-mentioned lower layer side stretches out, the low concentration impurity zone forms from coupling ground on semiconductor film.
Therefore, even when making the protective circuit element 381 of present embodiment, also floating electrode 118g can be made the same double-layer structure of gate electrode with above-mentioned GOLDD structure TFT.Import by in N layer 118n, carrying out impurity, can accomplish to form low concentration impurity zone 318n at the plane domain of floating electrode 118g.
(the 4th execution mode)
Next, illustrate about the 4th execution mode of the present invention.Fig. 7 is the general profile chart of the relevant protective circuit element that thin film semiconductor device possessed of the 4th execution mode.Fig. 7 is the figure that is equivalent to Fig. 2 (b) of the first previous execution mode, the protective circuit element 181 shown in same Fig. 2 of planar structure (a) of the protective circuit element 481 that present embodiment is relevant basic identical.
In first to the 3rd former execution mode, explanation will with a part of plane of semiconductor film 118s on overlap the floating electrode 118g of configuration as mask, use the situation that imports impurity in the semiconductor film, in the formation operation of the TFT that constitutes internal circuit, there is no need to adopt and to form the raceway groove region method from coupling ground.For example, also the photoresist that forms pattern on gate insulating film can be carried out importing impurity to semiconductor film as mask, in this case, form gate electrode after becoming importing impurity, can adopt the structure that overlaps on a part of plane of gate electrode and impurity ingress area (for example, drain region).Thereby, for the situation that relevant structure is formed as internal circuit,, use the device of the PIN diode 481a with present embodiment as the protective circuit element, the commonization this point of manufacturing process is effective.
(e-machine)
Next, object lesson about the e-machine of liquid crystal indicator with above-mentioned execution mode of the present invention is described.
Fig. 8 is the stereogram as portable telephone one example.In Fig. 8, symbol 1300 expression portable telephone main bodys, the display part of above-mentioned liquid crystal indicator is used in symbol 1301 expressions.Symbol 1302 is operating portions, and 1303,1304 is respectively receiving portion and sending part.
Electronic equipments shown in Figure 8 owing to have the display part of the liquid crystal indicator that uses above-mentioned example, can realize possessing high reliability and long-life liquid crystal display part.
In addition, technical scope of the present invention is not limited to the qualification of above-mentioned execution mode, can do various distortion in the scope that does not break away from purport of the present invention.For example, the present invention also is applicable to the electro-optical device that uses active-matrix substrate, is not only liquid crystal indicator, also can be applicable to current drive-type light-emitting devices such as OLED display.In addition, the configuration for the peripheral circuit of data line drive circuit, scan line drive circuit etc. is not limited to aforesaid way, also may carry out suitable distortion.
Claims (14)
1. a thin film semiconductor device is the thin film semiconductor device that comprises matrix and be formed at the semiconductor film on this matrix, it is characterized in that,
Be provided with on the described matrix have the main circuit portion of semiconductor element, by this extended portion of terminal of main circuit portion, insert in the protective circuit portion between described main circuit portion and the described portion of terminal;
Described protective circuit portion is provided with the protective circuit element,
Described protective circuit element comprises: have the PIN diode of described semiconductor film, and between the floating electrode of the relative configuration of I layer of dielectric film and this PIN diode.
2. thin film semiconductor device according to claim 1 is characterized in that,
Constituting the semiconductor film of described PIN diode and the semiconductor film of the semiconductor element of the described main circuit of formation portion is the semiconductor film that the same one deck on described matrix forms.
3. thin film semiconductor device according to claim 2 is characterized in that,
The semiconductor element that described main circuit portion is had is a thin-film transistor,
The conducting film that constitutes the conducting film of described floating electrode and constitute the gate electrode of described thin-film transistor is formed on the same one deck on the described matrix.
4. according to each the described thin film semiconductor device in the claim 1～3, it is characterized in that,
The I layer of described floating electrode and described PIN diode is formed on the rough same position when overlooking.
5. according to each the described thin film semiconductor device in the claim 1～3, it is characterized in that,
Described PIN diode is to have the low concentration impurity zone lower than this P layer impurity concentration between its P layer and I layer, perhaps, has the low concentration impurity zone lower than N layer impurity concentration between N layer and I layer.
6. thin film semiconductor device according to claim 5 is characterized in that,
Described low concentration impurity zone be formed on described floating electrode plane in the zone that overlaps.
7. according to each the described thin film semiconductor device in the claim 1～3, it is characterized in that,
Described PIN diode and floating electrode between the relative configuration of dielectric film have and the part of the P layer of described PIN diode or N layer superposed part in the plane.
8. according to each the described thin film semiconductor device in the claim 1～3, it is characterized in that,
Described protective circuit element directly is connected with described portion of terminal.
9. the manufacture method of a thin film semiconductor device is the manufacture method that has matrix and be formed at the thin film semiconductor device of the semiconductor film on this matrix, it is characterized in that,
Described thin film semiconductor device be provided with on the matrix have the main circuit portion of semiconductor element, by this extended portion of terminal of main circuit portion, insert in the protective circuit portion between described main circuit portion and the described portion of terminal,
The operation that forms described protective circuit portion comprises: the protective circuit element forms operation,
Described protective circuit element forms operation and comprises:
On the semiconductor film that is formed on the matrix, form the operation of dielectric film;
By form on the described dielectric film conductive film pattern form with described semiconductor film plane on the operation of the floating electrode that overlaps;
By described floating electrode is imported impurity as mask in described semiconductor film, on this semiconductor film, form P layer, N layer and I layer, to form the operation of PIN diode.
10. the manufacture method of thin film semiconductor device according to claim 9 is characterized in that,
Described main circuit portion has thin-film transistor, this thin-film transistor contain comprise semiconductor film and in this semiconductor film between the relative gate electrode of dielectric film;
In same operation, form semiconductor film that constitutes described thin-film transistor and the semiconductor film that constitutes described protective circuit element; And
In same operation, form gate electrode that constitutes described thin-film transistor and the floating electrode that constitutes described protective circuit element.
11. the manufacture method of thin film semiconductor device according to claim 10 is characterized in that,
Import operation by same impurity and form the source electrode of described thin-film transistor and the P layer of described PIN diode, the perhaps drain electrode of described thin-film transistor and N layer.
12. the manufacture method of thin film semiconductor device according to claim 11 is characterized in that,
Import in the operation at described impurity, in the semiconductor film of the semiconductor film of described thin-film transistor and described protective circuit element, the low concentration impurity field that the impurity concentration of the impurity ingress area that connects near can forming is low.
13. an electro-optical device is characterized in that,
Contain each the described thin film semiconductor device in the claim 1～8.
14. an e-machine is characterized in that,
Contain the described electro-optical device of claim 13.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2004215333 | 2004-07-23 | ||
| JP2004215333 | 2004-07-23 | ||
| JP2005114230 | 2005-04-12 |
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| CN100454553C true CN100454553C (en) | 2009-01-21 |
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| JP5000650B2 (en) * | 2006-06-30 | 2012-08-15 | シャープ株式会社 | TFT substrate, display panel including the same, display device, and method for manufacturing TFT substrate |
| CN104483796A (en) | 2015-01-04 | 2015-04-01 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof, display panel and display device |
| CN110085585B (en) * | 2019-05-05 | 2021-02-02 | 深圳市华星光电半导体显示技术有限公司 | Electrostatic protection device and display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1165568A (en) * | 1995-10-03 | 1997-11-19 | 精工爱普生株式会社 | Active matrix substrate |
| JP2002033454A (en) * | 2000-07-17 | 2002-01-31 | Nec Miyagi Ltd | Semiconductor integrated circuit |
| CN1435883A (en) * | 2002-01-30 | 2003-08-13 | 联华电子股份有限公司 | Non-gate-comtrolled diode element electrostatic discharge protection circuit and mfg. method thereof |
| WO2004019123A1 (en) * | 2002-08-24 | 2004-03-04 | Koninklijke Philips Electronics N.V. | Manufacture of electronic devices comprising thin-film circuit elements |
-
2005
- 2005-07-19 CN CNB2005100860668A patent/CN100454553C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1165568A (en) * | 1995-10-03 | 1997-11-19 | 精工爱普生株式会社 | Active matrix substrate |
| JP2002033454A (en) * | 2000-07-17 | 2002-01-31 | Nec Miyagi Ltd | Semiconductor integrated circuit |
| CN1435883A (en) * | 2002-01-30 | 2003-08-13 | 联华电子股份有限公司 | Non-gate-comtrolled diode element electrostatic discharge protection circuit and mfg. method thereof |
| WO2004019123A1 (en) * | 2002-08-24 | 2004-03-04 | Koninklijke Philips Electronics N.V. | Manufacture of electronic devices comprising thin-film circuit elements |
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