CN100453702C - Plasma processing apparatus and components thereof, and method for detecting life span of the components - Google Patents
Plasma processing apparatus and components thereof, and method for detecting life span of the components Download PDFInfo
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- CN100453702C CN100453702C CNB2006100082257A CN200610008225A CN100453702C CN 100453702 C CN100453702 C CN 100453702C CN B2006100082257 A CNB2006100082257 A CN B2006100082257A CN 200610008225 A CN200610008225 A CN 200610008225A CN 100453702 C CN100453702 C CN 100453702C
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Abstract
In a plasma processing apparatus capable of generating a plasma in a processing chamber accommodating therein a substrate to plasma-process the substrate, a component disposed in the processing chamber includes an identification indicia formed with one or more symbols indicated by arranging a plurality of dotted recesses on a surface of the component. The dotted recesses are of a substantially circular shape in a plane view and a substantial U-shape in a sectional view. The life span of the component can be detected based on a status of the identification indicia.
Description
Technical field
The present invention relates to plasma processing apparatus, relate generally to the parts and the detection method in its life-span in the processing vessel that is configured in plasma processing apparatus.
Background technology
In the manufacturing process of the electronic apparatus of semiconductor device and liquid crystal indicator etc. etc.,, carry out the film on the substrate is etched into the etch processes of regulation shape for example in order on substrate, to form the circuit pattern of regulation.And in this etch processes extensive using plasma treatment unit.Plasma processing apparatus for example has the lower electrode of mounting substrate and becomes the spray header that the substrate on this lower electrode is sprayed the upper electrode of regulation gas in treatment chamber.Etch processes for example under the state of the mixed gas that sprays regulation from spray header in treatment chamber, applying high-frequency electrical between two electrodes up and down, by generate plasma body in treatment chamber, is carried out etching to the film on the substrate.
Wherein in treatment chamber, generate plasma body described resembling, substrate in the treatment chamber is carried out under the situation of etch processes, the so-called etching characteristic that has so-called etching speed, etching selectivity etc. is in the central part of substrate and the problem of position, neighboring generation deviation.Think that one of its reason is the plasma density that generates near the central part and inhomogeneous between near the position, neighboring in treatment chamber.So proposed be positioned in substrate on the lower electrode around dispose so-called focusing ring, utilize generating the plasma body range extension around substrate, make the plasma density homogenizing on the substrate, make the scheme (for example with reference to patent documentation 1,2) of etch processes homogenizing.
On focusing ring in being configured in the processing vessel of plasma processing apparatus and other the parts, have the identifier of the manufacturing numbering that is used for component management etc.By managing, the replacing time of decision means, maybe can carry out tracking investigation to the manufacturing processed of the parts that produce defective etc. etc. with this identifier.Under the situation for the parts additional identification sign of plasma processing apparatus, utilize so-called laser labelling method now,, form the identifier of numeral and literal etc. by scribe the successive groove at parts surface.
Owing to the parts in the processing vessel that is configured in plasma processing apparatus expose at high temperature when handling, like this for the parts that have identifier, sometimes the thermal stresses that increases because of the degree of Cement Composite Treated by Plasma, producing with the identifier is the crackle of starting point.Particularly for the parts that resemble such parts that are made of Si such as focusing ring and be made of the so-called hard brittle material of quartz, alumina-ceramic, yttrium, SiC etc., being easy to generate with the identifier is the crackle of starting point.
Summary of the invention
Given this present invention puts and the invention carried out, its objective is to be provided in the plasma processing apparatus that being difficult to produce with the identifier is the parts of the crackle of starting point, provides simultaneously to utilize this identifier can the detection part method of life.
In order to reach described purpose, as adopt the present invention, the parts of plasma processing apparatus can be provided, be in the processing vessel of substrate of packing into, to generate plasma body, substrate is implemented in the plasma processing apparatus of Cement Composite Treated by Plasma, be configured in the parts in the described processing vessel, it is characterized in that, have identifier on the surface of described parts, this identifier is with by having the combination that the represented side by side mark in basic point hole substantially circular, that the longitudinal section shape is roughly the U font carries out more than a group or two groups on the plane and obtain a plurality of.
In these parts, the diameter D in for example described basic point hole is below the 0.1mm, and the central shaft shortest distance L each other in basic point hole is more than 3 times of described diameter D.Shell thickness when in this case, the diameter D in described basic point hole is preferably than Cement Composite Treated by Plasma is little.During the described mark of this external expression, a plurality of basic points hole is lined up under the situation that row that the basic point hole row of wire configuration and other basic points that the wire configuration is lined up in a plurality of basic point hole cheat join, and being listed as each other at these these basic points of position that joins, angulation can be not less than 25 °.
These external described parts are exposed on the interior surface of processing vessel, have two identifiers after the above marks combination, and in described plural mark, the degree of depth difference in basic point hole also can on each mark.These external described parts are not exposed on the interior surface of processing vessel, can have described identifier yet.
Described in addition parts can be by any one parts that constitute among Si, quartz, alumina-ceramic, yttrium, the SiC.
Described in addition basic point hole for example can form with laser processing.Described basic point hole for example can form with Wet-type etching.
In addition as adopting the present invention, a kind of plasma processing apparatus is provided, and is to generate plasma body in the processing vessel of substrate of packing into, substrate is implemented the plasma processing apparatus of Cement Composite Treated by Plasma, it is characterized in that, described component configuration in described processing vessel.
In addition as adopting the present invention, the life detecting method of the parts in a kind of plasma processing apparatus is provided, be in the processing vessel of substrate of packing into, to generate plasma body, substrate is implemented in the plasma processing apparatus of Cement Composite Treated by Plasma, detection is configured in the method for life of the parts in the described processing vessel, it is characterized in that, on the surface of described parts, have identifier, this identifier be with by a plurality of see on the plane have substantially circular, the represented side by side mark in basic point hole that the longitudinal section shape is roughly the U font carries out one group or two groups of above combinations and obtains, and utilizes the life-span of the described parts of state-detection of this identifier.
In this case, the diameter D in described basic point hole is below the 0.1mm, and the central shaft shortest distance L each other in basic point hole is more than 3 times of described diameter D.The shell thickness of the diameter D in described in addition basic point hole during preferably than Cement Composite Treated by Plasma is little.Being exposed on the interior surface of processing vessel of these external described parts has the different plural mark of the hole degree of depth of basic point concerning each mark made up the identifier that obtains, and can detect the life-span of described parts according to the disappearance of each mark.
As adopt the present invention, for the parts in the processing vessel that is configured in plasma processing apparatus, can suppress with the identifier is the crackle generation of starting point.As adopting the present invention, utilize the identifier that has on the parts surface can detect the life-span of these parts in addition.
Description of drawings
Fig. 1 is the longitudinal diagram of brief configuration that is used to illustrate the plasma processing apparatus of present embodiment.
Fig. 2 is the vertical view of focusing ring.
Fig. 3 is the upward view of focusing ring.
Fig. 4 is the enlarged view of the identifier that has above of focusing ring.
Fig. 5 is the enlarged view of the identifier that has below of focusing ring.
Fig. 6 is for representing from the last or following amplification plan view of seeing the state in basic point hole.
Fig. 7 is illustrated in basic point to cheat the amplification longitudinal diagram that the surface of position cut-out focusing ring is represented.
Fig. 8 is the explanatory view of the basic point hole degree of depth.
Fig. 9 is the explanatory view of laser processing device.
Figure 10 is the explanatory view of Wet-type etching.
Figure 11 is the drawing in side sectional elevation of inner upper electrode.
Figure 12 is the explanatory view of the brief configuration of expression airing system.
Figure 13 is the explanatory view of the test sample of embodiments of the invention.
Figure 14 is the explanatory view of the test sample of Comparative Examples.
Figure 15 is the explanatory view of rupture test.
Figure 16 is for representing about the test sample of embodiments of the invention and the test sample of Comparative Examples the curve of the relation of thickness and breaking tenacity.
Nomenclature: S treatment chamber; The W substrate; 1 plasma processing apparatus; 10 processing vessels; 11 insulcretes; 12 base supports platforms; 13 pedestals; 14 electrostatic chucks; 15 electrodes; 16 direct supplys; 17 focusing rings; 18 insulating elements; 20,21 identifiers; 20a, 20b, 20c, 21a, 21b, 21c mark; 22 basic points hole; 23 laser processing devices; 24 laser oscillators; 25 scanning mechanisms; 26 lens; 27 etching drops; 28 cooling medium chambers; 29a, 29b pipe arrangement; 29c air feed circuit; 30 upper electrodes; 31 outer upper electrode; 32 inner upper electrode; 33 dielectric substances; 34 insulativity shield members; 40 matching boxs; 41 top feeder rod used thereins; 42 junctors; 43 power supply tubes; 44 first high frequency electric sources; 45 insulating elements; 50 battery lead plates; 50a gas squit hole; 52 electrode supports; 53 surge chambers; 54 annulars are cut off parts; 53a first surge chamber; 53b second surge chamber; 60 bottoms power supply tube; 61 variable condenser; 70 venting ports; 71 vapor pipes; 72 gas barrier; 80 matching boxs; 81 second high frequency electric sources; 82 low-pass filters; 83 Hi-pass filters; 90 apparatus control portion; 100,101 gas tanks; 102 first air-supply duct; 104 mass flow controllers; 105 flow control valves; 110 second air-supply duct; 112 mass flow controllers; 113 flow control valves; 120 gas setting devices.
Embodiment
Below the preferred embodiment of the present invention is described.Fig. 1 is the longitudinal diagram of general structure that is used to illustrate the plasma processing apparatus 1 of present embodiment.This plasma body treatment unit 1 is to constitute the device that the substrate W of Si wafer etc. is for example carried out plasma etch process.
The bottom of the central authorities in processing vessel 10 is provided with columniform base supports platform 12 by insulcrete 11.Pedestal 13 in base supports platform 12 upper supports as the mounting portion of mounting substrate W.Pedestal 13 constitutes the lower electrode of parallel plate-type electrode structure.Pedestal 13 is for example made with aluminium alloy.
Be provided with the electrostatic chuck 14 that keeps substrate W on the top of pedestal 13.There is electrode 15 electrostatic chuck 14 inside.Direct supply 16 is electrically connected with electrode 15.By volts DS being applied on the electrode 15 from direct supply 16, produce the Coulomb's force, can substrate W be adsorbed on pedestal 13 above.
On the pedestal 13 around the electrostatic chuck 14, be attracted to the mode of the periphery of the substrate W above the pedestal 13, configuration focusing ring 17 with encirclement.Focusing ring 17 is identical with substrate W, is made of Si.On the face of the neighboring of pedestal 13 and base supports platform 12, stick the columnar insulating element 18 that for example constitutes by quartz.Focusing ring 17 is positioned on these pedestals 13 and the insulating element 18, become focusing ring 17 above be exposed in the processing vessel 10 the following state that is not exposed in the processing vessel 10 of focusing ring 17.The top height of focusing ring 17 is configured to identical with the top height of the top substrate W that is attracted to pedestal 13 in addition.
Fig. 2,3 is the top and bottom perspective views of the focusing ring 17 of use in this plasma body treatment unit 1.Shown in these Fig. 2,3, on focusing ring 17, have the identifier 20 of regulation, below focusing ring 17, have the identifier 21 of other regulation equally.In this embodiment, the identifier that has above 20 of focusing ring 17 is the structures that are combined into by three mark 20a, 20b, 20c, and the identifier that has below 21 of same focusing ring 17 also is the structure that is combined into by three mark 21a, 21b, 21c.
Fig. 4 is the enlarged view of the identifier that has above 20 of focusing ring 17, and Fig. 5 is the enlarged view of the identifier that has below 21 of focusing ring 17.As shown in Figure 4, the identifier that has above 20 of focusing ring 17 is represented " 123 " of three bit digital as a whole by the mark 20c of the mark 20b of the mark 20a of expression numeral " 1 ", expression numeral " 2 ", expression numeral " 3 " side by side.In addition as shown in Figure 5, the identifier that has below 21 of focusing ring 17 is represented " 456 " of three bit digital as a whole by the mark 21c of the mark 21b of the mark 21a of expression numeral " 4 ", expression numeral " 5 ", expression numeral " 6 " side by side.
Each mark 20a, 20b, 20c, 21a, 21b, 21c are basic point hole 22 structures side by side that a plurality of surfaces at focusing ring 17 (above or below) formed.Fig. 6 is for representing from the last or following amplification view of seeing the state in basic point hole 22.So shown in Figure 6, each basic point hole 22 has to be seen on the plane and to be roughly circle.Fig. 7 is the longitudinal diagram that the amplification of expression is cut at the position that is illustrated in basic point hole 22 to the surface of focusing ring 17 (top or following) open.So shown in Figure 7, each basic point hole 22 forms semisphere in the longitudinal section upper bottom portion, and the inlet part of the near surface of focusing ring 17 forms cylindrical.The longitudinal section shape in each basic point hole 22 becomes and is roughly the U font like this.
The shell thickness of the plasma body that produces in processing vessel 10 when the diameter D in these each basic point holes 22 makes than the Cement Composite Treated by Plasma in plasma processing apparatus 1 in addition is little.(plasma sheath: plasma sheath) thickness changes because of the generation condition of plasma body and the various principal elements of handling gas etc. the shell of plasma body, specifically, for example below 0.1mm, preferably the diameter D in each basic point hole 22 is below 0.05mm for the diameter D in each basic point hole 22.
This is external in order to represent that each mark 20a, 20b, 20c, 21a, 21b, 21c are arranged into the distance of space regulation between a plurality of basic points hole 22 of line and dispose.Between adjacent basic point hole 22, more than 3 times of diameter D that the central shaft shortest distance L each other in basic point hole 22 for example sets basic point hole 22 for (are L 〉=3D).This shortest distance L is for example more than 0.15mm specifically.
When this external expression each mark 20a, 20b, 20c, 21a, 21b, 21c, a plurality of basic points hole 22 is arranged into wire basic point row that dispose and the other basic point that a plurality of basic points hole 22 is arranged into the line configuration and is listed as under the situation of joining, on the position that joins between these basic point row, the angle that is become between the basic point row is set for and is not less than 25 °.Just for example in identifier shown in Figure 5 21, describe as the mark 21a according to expression numeral " 4 ", this mark 21a is by a plurality of basic points hole 22 being arranged into the first basic point row 22a of L font wire and a plurality of basic points hole 22 being constituted at the second basic point row 22b that y direction is arranged into linearity.Become the end of the first basic point row 22a that will be arranged into the L font and the almost central structure that is connected of the second basic point row 22b that is arranged into vertical row.As being example with this mark 21a, on the first basic point row 22a and the second basic point row 22b connecting position 22c (an end position 22c=who just is arranged into the first basic point row 22a of L font is arranged into the position 22c of cardinal principle central authorities of the second basic point row 22b of vertical row), the first basic point row 22a and the second basic point row 22b angulation θ a, θ b are set Chengdu and are not less than 25 °.In the example of this mark 21a, all be almost 90 ° at the first basic point row 22a and the second basic point row 22b angulation θ a, the θ b of position 22c.The mark 21a of his-and-hers watches registration word " 4 " is illustrated, and other marks 20a, 20b, 20c, 21b, 21c also are the positions that joins between the basic point row, and the angle that is become between these basic point row all is configured to be not less than 25 °.
Notice several sections degree of depth differences for the depth d in each basic point hole 22 in addition.Just in this embodiment, cheat 22 just like the basic point hole 22 of the superficial depth d 1 shown in Fig. 8 (a), the basic point hole 22 of the moderate depth d 2 shown in Fig. 8 (b), the basic point of the deep depth d 3 shown in Fig. 8 (c).And, be configured to the degree of depth difference in basic point hole 22 for the identifier that has above 20 of focusing ring 17 to each mark 20a, 20b, 20c.
In this embodiment, the mark 20a of expression numeral " 1 " shows with the basic point hole 22 of superficial depth d 1 in identifier shown in Figure 4 20.The mark 20b of expression numeral in addition " 2 " shows that with the basic point hole 22 of moderate depth d 2 the mark 20c of expression numeral " 3 " shows with the basic point hole 22 of deep depth d 3.
For the identifier 21 that below focusing ring 17, has, represent that each mark 21a, 21b, 21c constitute in the basic point hole 22 of the same degree of depth on the other hand.In this case, each mark 21a, 21b, 21c only constitute with the basic point hole 22 of superficial depth d 1.
For example form above each basic point hole 22 with laser processing device shown in Figure 9 23.As adopt this laser processing device 23, and the optical facilities of the laser that penetrates from laser oscillator 24, shine on the surface of focusing ring 17 by scanning mechanism 25, lens 26 etc., can form and have the basic point hole 22 of wishing diameter D and depth d.In this laser processing device 23, for example pass through to adjust the range of exposures of laser with scanning mechanism 25, the diameter D that can make basic point hole 22 is for big or small arbitrarily.For example shine the irradiation quantity of focusing ring 17 lip-deep laser in addition by adjustment, can make the depth d in basic point hole 22 is any degree of depth.For example the irradiation quantity by making laser is lacked than the number of times of the situation in the basic point hole 22 that forms moderate depth d 2, can form the basic point hole 22 of superficial depth d 1.On the contrary the irradiation quantity by making laser can form the basic point hole 22 of deep depth d 3 than the situation in the basic point hole 22 that forms moderate depth d 2 often in addition.
Example contacts the Wet-type etching on the surface of focusing rings 17 by making etching drop 27 as shown in Figure 10 in addition, can form each basic point hole 22.For example by regulating disposing time, can make the diameter D in basic point hole 22 and depth d be any size in this case.Also can form basic point hole 22 by the etch processes of using mask in addition.In addition for example can be with the mixed solution of fluoric acid and nitric acid etc. as etching solution.
As shown in Figure 1, at the base supports platform 12 inner annular cooling medium chambers 28 that form.Cooling medium chamber 28 is communicated with the freezing unit that is arranged on processing vessel 10 outsides (not expression among the figure) by pipe arrangement 29a, 20b.In cooling medium chamber 28, provide heat-eliminating medium or water coolant, the temperature of the substrate W that can control on the pedestal 13 is provided by such circulation by pipe arrangement 29a, 29b circulation.On electrostatic chuck 14, by feeding the gas supply line 29c in pedestal 13 and the base supports platform 12, can be provided to the heat-conducting gas of He gas etc. between substrate W and the electrostatic chuck 14.
Above pedestal 13, be provided with the upper electrode 30 right with pedestal 13 parallel surfaces.Between pedestal 13 and upper electrode 30, form the plasma body span.
First high frequency electric source 44 is electrically connected with outer upper electrode 31 by matching box 40, top feeder rod used therein 41, junctor 42 and power supply tube 43.First high frequency electric source 44 can be exported more than the 40MHz for example high-frequency voltage of the frequency of 60MHz.
Inner upper electrode 32 constitutes the spray header to the mixed gas that is positioned in the substrate W ejection regulation on the pedestal 13.Inner upper electrode 32 has the circular electrode plates 50 that a plurality of gas squit hole 50a are arranged, the electrode support 52 that can freely support a top side of battery lead plate 50 with installing and removing.Electrode support 52 is made the disc with battery lead plate 50 same diameter, forms circular surge chamber 53 in inside.
The annular that is made of O shape ring for example shown in Figure 11 is set in surge chamber 53 cuts off parts 54, surge chamber 53 is divided into first surge chamber 53a of centre one side and the second surge chamber 53b of position, neighboring one side.The central part of substrate W on the first surge chamber 53a and the pedestal 13 is faced mutually, and it is right to practise physiognomy in the position, neighboring of the substrate W on the second surge chamber 53b and the pedestal 13.Gas squit hole 50a with below each surge chamber 53a, 53b, be communicated with, can be from the first surge chamber 53a to the mixed gas of the central part of substrate W ejection regulation, can be from the second surge chamber 53b to the mixed gas of the position, neighboring of substrate W ejection regulation.In addition for providing the gas supply system of the mixed gas of regulation to narrate in the back to each surge chamber 53.
As shown in Figure 1, be connected on the top feeder rod used therein 41 bottom power supply tube 60 be electrically connected above the electrode support 52.On bottom power supply tube 60, variable condenser 61 is set.Variable condenser 61 can adjust high-frequency voltage that utilization produces by first high frequency electric source 44 and formed strength of electric field under the outer upper electrode 31 and under inner upper electrode 32 relative proportion of formed strength of electric field.
The bottom of processing vessel 10 is formed with venting port 70.Venting port 70 is connected on the gas barrier 72 with vacuum pump etc. by vapor pipe 71.Utilize the gas barrier 72 can be the vacuum tightness of the hope of reducing pressure in the processing vessel 10.
Second high frequency electric source 81 is electrically connected with pedestal 13 by matching box 80.Second high frequency electric source 81 can be exported for example high-frequency voltage of the 2MHz of 20MHz～20MHz range frequencies.
Be used to interdict high frequency radio wave, the low-pass filter 82 that passes through from the high frequency radio wave ground connection of second high frequency electric source 81 is electrically connected with inner upper electrode 32 from first high frequency electric source 44.Be used to make the Hi-pass filter 83 that passes through from the high frequency radio wave ground connection of first high frequency electric source 44 to be electrically connected with pedestal 13.
In plasma processing apparatus 1, be provided with the apparatus control portion 90 of each unit action that is used to implement etch processes of control direct supply 16, first high frequency electric source 44 and second high frequency electric source 81 etc.
Following subtend inner upper electrode 32 provides the system of mixed gas to describe.As shown in figure 12, inner upper electrode 32 is connected on two gas tanks 100,101 that are located at processing vessel 10 outsides.The first surge chamber 53a of central part one side of inner upper electrode 32 is connected on first gas tank 100 with first air-supply duct 102.Three air supply source 103a, 103b, 103c pack in first gas tank 100.First air-supply duct 102 extends to first gas tank 100 from the first surge chamber 53a, and branch is communicated with each air supply source 103a～103c of first gas tank 100 halfway.Be respectively arranged with mass flow controller 104 on each isocon of first air-supply duct 102.Utilize this mass flow controller 104 to mix the gas of each air supply source 103a～103c with the ratio of mixture of regulation, offer the first surge chamber 53a.First air-supply duct 102 is provided with flow control valve 105, can offer the first surge chamber 53a to the mixed gas of regulation flow.
In the present embodiment, for example in air supply source 103a, enclose for example fluorine cpd, for example CF of fluorine carbon system
4, C
4F
6, C
4F
8, C
5F
8Deng C
XF
YGas is enclosed for example sedimentary for example O of the reaction product of conduct control CF class in air supply source 103b
2Gas.For example in air supply source 103c, enclose as the rare gas of carrier Ar gas for example.
Be connected on second gas tank 101 with second air-supply duct 110 at the second surge chamber 53b of the position, neighboring of inner upper electrode 32 side equally.Three air supply source 111a, 111b, 111c for example pack in second gas tank 101.Second air-supply duct 102 extends to second gas tank 101 from the second surge chamber 53b, and branch is communicated with each air supply source 111a～111c of second gas tank 101 halfway.Be respectively arranged with mass flow controller 112 on each isocon of second air-supply duct 110.Utilize this mass flow controller 112 to mix the gas of each air supply source 111a～111c with the ratio of mixture of regulation, offer the second surge chamber 53b.Second air-supply duct 110 is provided with flow control valve 113, can offer the second surge chamber 53b to the mixed gas of regulation flow.
In the present embodiment, for example the air supply source 103a～103c with first gas tank 100 is identical, encloses the C as main etching gas in air supply source 111a
XF
YGas is enclosed the sedimentary O that the reaction product of CF class is removed in for example conduct in air supply source 111b
2Gas.For example in air supply source 111c, enclose Ar gas as rare gas.
The mass flow controller 112 of the mass flow controller 104 of first air-supply duct, 102 1 sides, flow control valve 105, second air-supply duct, 110 1 sides, the action of flow control valve 113 for example can be controlled with the apparatus control portion 90 of plasma processing apparatus 1.The ratio of mixture and the flow of the mixed gas of the ratio of mixture of the mixed gas that provides to the first surge chamber 53a and flow being provided on apparatus control portion 90, being provided to the second surge chamber 53b, apparatus control portion 90 can be controlled the action of each mass flow controller 104,112 and flow control valve 105,113 according to the various settings of this mixed gas.
The gas setting device 120 that each mixed gas of being used for the subtend first surge chamber 53a, the second surge chamber 53b and providing is set is provided in this plasma body treatment unit 1.Gas setting device 120 for example can constitute with multi-purpose computer.Gas setting device 120 for example can communicate apparatus control portion 90, to apparatus control portion 90 output set informations, can carry out the various settings of the relevant mixed gas of apparatus control portion 90.
In the etch processes of the plasma processing apparatus 1 that resembles above such formation, at first substrate W is positioned on the pedestal 13.By exhaust, treatment chamber S is adjusted to the pressure of regulation then from vapor pipe 90.Then from inner upper electrode 32 for example C
XF
YGas, O
2The mixed gas as etching gas that gas and Ar gas are formed is provided in the treatment chamber S.Provide mixed gas from the first surge chamber 53a to centre one side of substrate W this moment, provides mixed gas from the second surge chamber 53b to position, neighboring one side of substrate W.This external application high frequency electric source 81 applies high frequency radio wave on pedestal 13, make the gaseous plasmaization in the treatment chamber S.Utilize the effect of this plasma body, the film on the substrate W is etched into the shape of regulation.
Wherein resemble above-mentioned like this when treatment chamber S carries out plasma etch process to substrate W, since be positioned in substrate W on the pedestal 13 around dispose focusing ring 17, can make the formation range of plasma body expand to substrate W around, make the plasma density homogenizing on the substrate W, can make the etch processes homogenizing.After etch processes ends, the substrate W that implements uniform etch processes is like this taken out in treatment chamber 10 then.
When such plasma etch process, the focusing ring 17 that exposes in processing vessel 10 is exposed in the high temperature, handles focusing ring 17 at every turn and will expand repeatedly, shrink.Expand repeatedly at every turn, be contracted in and all applied thermal stresses on the focusing ring 17.
As adopting the focusing ring 17 that in this embodiment, illustrates, because as described in front, the identifier 20,21 that the surface of focusing ring 17 (top and following) has is by utilizing fine circular basic point hole 22 mark 20a, 20b, 20c, 21a, 21b, the 21c that formed to constitute, so to be difficult to take place with the identifier be the crackle of starting point.Therefore can use focusing ring 17 for a long time with existing comparing.In this case, as mention the focusing ring 17 that is made of Si, below 0.1mm, the central shaft shortest distance L each other in basic point hole 22 is 3 times of diameter D, can prevent with the identifier to be the crackle of starting point effectively as the diameter D in each basic point hole 22.In addition as illustrating according to mark 21a shown in Figure 5 (numeral " 4 "), when expression each mark 20a, 20b, 20c, 21a, 21b, 21c, under the situation that the basic point row that a plurality of basic points hole 22 are arranged into the wire configuration join each other, as set the angle that is become between these basic points row and all be not less than 25 °, owing to do not have a plurality of basic points hole 22 concentrated, so can prevent effectively that with identifier 20,21 be the crackle of starting point at specific position.In addition as the shell of the diameter D that makes basic point hole 22 during than Cement Composite Treated by Plasma (sheath: sheath) thickness is little, when Cement Composite Treated by Plasma, plasma body can not enter the inside in basic point hole 22, almost can avoid causing the problem of deep-cutting basic point hole 22 because of Cement Composite Treated by Plasma yet.
In addition on the other hand, in case carry out such plasma etch process repeatedly, above the focusing ring 17 that in processing vessel 10, exposes because of receiving ionic etch from plasma body by sputter.Focusing ring 17 attenuation gradually.As adopting the focusing ring 17 that illustrates in this embodiment, as foregoing, the identifier that has above 20 for focusing ring 17, owing in each mark 20a, 20b, 20c, be configured to the degree of depth difference in basic point hole 22, so each mark 20a, 20b, 20c play the effect as the concentrator marker of the loss situation that shows focusing ring 17, can know the life-span of focusing ring 17 with each mark 20a, 20b, 20c.
Just owing to constitute depth d 1, d2, the d3 difference of each mark 20a of identifier 20, in case above the focusing ring 17 that in processing vessel 10, exposes because of the ionization loss gradually of plasma body, at first initial because with the basic point hole 22 mark 20a that represent (numeral " the 1 ") disappearance of superficial depth d 1, can detect like this focusing ring 17 top cardinal principle loss the degree of depth d 1.The further loss of top ionization of focusing ring 17 in addition because of plasma body, after this under situation about disappearing with the basic point of the moderate depth d 2 hole 22 mark 20b that represent (numeral " 2 "), can detect focusing ring 17 top cardinal principle loss the degree of depth d 2.The top further loss of ionization of focusing ring 17 in addition because of plasma body, after this under situation about disappearing with the basic point of the deep depth d 3 hole 22 mark 20c that represent (numeral " 3 "), can detect like this focusing ring 17 top cardinal principle loss the degree of depth d 3.Like this by each mark 20a, 20b, 20c as concentrator marker, can know the life-span of focusing ring 17 stage by stage.In addition as the shell thickness of the diameter D that makes basic point hole 22 during than Cement Composite Treated by Plasma little, plasma body can not enter basic point hole 22 during Cement Composite Treated by Plasma.Therefore because of Cement Composite Treated by Plasma causes the problem of deep-cutting basic point hole 22 little, so the effect of concentrator marker can be correctly played in each basic point hole 22.
Directly do not expose the following of focusing ring 17 in the container 10 in addition owing in fact be not subjected to the ion erosion of plasma body, detect loss focusing ring 17 top so there is no need to resemble.The identifier that has below 21 of focusing ring 17 is just enough with basic point hole 22 expressions of the inferior limit size of the appreciable necessity of naked eyes, constitutes with regard to it doesn't matter so only cheat 22 with the basic point of superficial depth d 1.The identifier 21 that has below the focusing ring 17 that directly is not exposed in the container 10 like this is suitable for most manufacturing numbering of component management for example etc.
More than an example of embodiments of the present invention is illustrated, but the invention is not restricted to this example, can adopt various modes.For example at each mark 20a, 20b, 20c the different example of the degree of depth in basic point hole 22 is illustrated, but the degree of depth in the basic point of each mark 20a, 20b, 20c hole 22 also can equate for 20 pairs of identifiers that on focusing ring 17, has.Even in this case, the state of loss situation by identifier 20 etc. also can detect life-span of focusing ring 17.
In this external this embodiment, on focusing ring 17 and below the identifier 20,21 that has all use three to be numeral, but identifier also can only represent with a mark, or a plurality of marks beyond three are made up represent.Identifier is not limited to numeral in addition, can use diversified marks such as literal, other patterns to represent.
The surface of these external focusing ring 17 grades had identifier at 20,21 o'clock, can be with laser processing shown in Figure 9 with in formation basic point holes 22 such as Wet-type etchings illustrated in fig. 10.In this case, as utilize Wet-type etching, do not have the bottom surface of sharp edges to form hemispheric slick basic point hole 22 easily.Wet-type etching also is favourable being difficult to produce aspect the lattice defect in addition.
Be that example is illustrated with focusing ring 17 in addition, the present invention can be widely used in being configured in the interior various parts of processing vessel of plasma processing apparatus.The present invention is effective especially to the parts that the hard brittle material with Si, quartz, alumina-ceramic, yttrium, SiC etc. constitutes.As suitable miscellaneous part of the present invention upper electrode, precipitation Abschirmblech etc. are for example arranged.
An example as plasma processing apparatus is illustrated the plasma processing apparatus that carries out plasma etch process in addition, and the present invention also goes for carrying out the plasma processing apparatus of various film forming processing, CVD processing etc. except plasma etch process.
[embodiment]
Figure 13 represents that the test sample 200 that uses as embodiments of the invention, Figure 14 represent the test sample 210 that uses as a comparison case.These test samples 200,210 all are the foursquare sheet material of 30mm * 30mm.On the surface of the test sample 200 of the embodiment that Figure 13 represents, earlier horizontal row form with at mark 21a illustrated in fig. 5 mark 201 identical, that a plurality of basic points are represented side by side numeral " 4 ".On the surface of the test sample 210 of the Comparative Examples that Figure 14 represents,, form the mark 211 of expression numeral " 4 " at horizontal row on the other hand by carving the successive groove with the laser labelling method.As shown in figure 15, from the central authorities that the face opposite with mark 201,211 pushed these test samples 200,210, measure breaking tenacity F.Change the thickness t (mm) of test sample 200,210, investigated the relation of thickness t and breaking tenacity F, obtain Figure 16.Embodiments of the invention are compared with Comparative Examples, and breaking tenacity increases substantially.
Industrial applicibility
The present invention goes for plasma processing apparatus.
Claims (12)
1. the parts of a plasma processing apparatus are to make the plasma body generation and substrate is implemented to be configured in the parts in the described processing vessel in the plasma processing apparatus of Cement Composite Treated by Plasma in containing the processing vessel of substrate, it is characterized in that,
On the surface of described parts, have identifier, this identifier be with by a plurality of see on the plane have circle, the represented side by side mark that goes out in basic point that longitudinal section is shaped as U font hole carries out being combined to form more than a group or two groups,
The shell thickness of the diameter D in described basic point hole during than Cement Composite Treated by Plasma is little.
2. the parts of plasma processing apparatus according to claim 1 is characterized in that,
The diameter D in described basic point hole is below the 0.1mm, and the central shaft shortest distance L each other in basic point hole is more than 3 times of described diameter D.
3. the parts of plasma processing apparatus according to claim 1 is characterized in that,
When the described mark of expression, basic point hole row that configure lining up wire to a plurality of basic points hole and a plurality of basic points hole lined up wire and other basic points holes of configuring are listed as under the situation of joining, in this position that joins, angulation is not less than 25 ° between these basic point hole row.
4. according to the parts of each described plasma processing apparatus in the claim 1～3, it is characterized in that,
Being exposed on the surface in the processing vessel of described parts, have the identifier that plural mark is combined into, in described plural mark, it is different to constitute the degree of depth that the degree of depth and the basic point that constitutes other marks in the basic point hole of a mark cheat at least.
5. according to the parts of each described plasma processing apparatus in the claim 1～3, it is characterized in that,
Not being exposed on the surface in the processing vessel of described parts, have described identifier.
6. according to the parts of each described plasma processing apparatus in the claim 1～3, it is characterized in that,
Described parts are made of arbitrary material of Si, quartz, alumina-ceramic, yttrium, SiC.
7. according to the parts of each described plasma processing apparatus in the claim 1～3, it is characterized in that,
Described basic point hole forms with laser processing.
8. according to the parts of each described plasma processing apparatus in the claim 1～3, it is characterized in that,
Described basic point hole forms with Wet-type etching.
9. a plasma processing apparatus makes the plasma body generation and substrate is implemented Cement Composite Treated by Plasma in containing the processing vessel of substrate, it is characterized in that,
In described processing vessel, dispose any one described parts in the claim 1～8.
10. the component life detection method in the plasma processing apparatus, in containing the processing vessel of substrate, make in plasma body generation and the plasma processing apparatus substrate enforcement Cement Composite Treated by Plasma, detection is configured in the life-span of the parts in the described processing vessel, it is characterized in that
On the surface of described parts, have identifier, this identifier be with by a plurality of see on the plane have circle, the represented side by side mark that goes out in basic point that longitudinal section is shaped as U font hole carries out being combined to form more than a group or two groups,
The shell thickness of the diameter D in described basic point hole during than Cement Composite Treated by Plasma is little,
Utilize the life-span of the described parts of state-detection of this identifier.
11. the component life detection method in the plasma processing apparatus according to claim 10 is characterized in that,
The diameter D in described basic point hole is below the 0.1mm, and the central shaft shortest distance L each other in basic point hole is more than 3 times of described diameter D.
12. the component life detection method according in claim 10 or the 11 described plasma processing apparatus is characterized in that,
Being exposed on the interior surface of processing vessel of described parts has the identifier that plural mark is combined into, the mode that the degree of depth that this identifier is cheated with the degree of depth in the basic point hole that constitutes a mark at least and the basic point that constitutes other marks is different forms, and utilizes the consumption of each mark to detect the life-span of described parts.
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| JP2005040870 | 2005-02-17 | ||
| JP2005040870A JP4409459B2 (en) | 2005-02-17 | 2005-02-17 | Plasma processing apparatus and its component and component life detection method |
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| CN1821448A CN1821448A (en) | 2006-08-23 |
| CN100453702C true CN100453702C (en) | 2009-01-21 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPWO2008032627A1 (en) * | 2006-09-11 | 2010-01-21 | 株式会社アルバック | Dry etching method |
| KR101124795B1 (en) * | 2008-03-28 | 2012-03-23 | 도쿄엘렉트론가부시키가이샤 | Plasma process apparatus, component within the chamber and method for detecting the life of the same |
| JP2009245988A (en) * | 2008-03-28 | 2009-10-22 | Tokyo Electron Ltd | Plasma processing apparatus, chamber internal part, and method of detecting longevity of chamber internal part |
| JP2012009659A (en) * | 2010-06-25 | 2012-01-12 | Panasonic Corp | Dry etching apparatus and bulkhead cover part used therein |
| JP5630319B2 (en) * | 2011-02-23 | 2014-11-26 | 三菱マテリアル株式会社 | Parts for plasma processing apparatus and marking method for identification display |
| JP2013016532A (en) * | 2011-06-30 | 2013-01-24 | Tokyo Electron Ltd | Method of manufacturing silicon parts, and silicon parts for etching process apparatus |
| JP6311255B2 (en) * | 2013-09-26 | 2018-04-18 | 株式会社ジェイテクト | Bearing, bearing manufacturing method, and bearing management method |
| US10041868B2 (en) * | 2015-01-28 | 2018-08-07 | Lam Research Corporation | Estimation of lifetime remaining for a consumable-part in a semiconductor manufacturing chamber |
| US10651097B2 (en) | 2018-08-30 | 2020-05-12 | Lam Research Corporation | Using identifiers to map edge ring part numbers onto slot numbers |
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| US4936608A (en) * | 1987-08-27 | 1990-06-26 | Daimler-Benz Ag | Marking of industrial products or individual parts thereof |
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| US20040125360A1 (en) * | 2002-12-31 | 2004-07-01 | Tokyo Electron Limited | Monitoring erosion of system components by optical emission |
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| JP4409459B2 (en) | 2010-02-03 |
| JP2006228966A (en) | 2006-08-31 |
| CN1821448A (en) | 2006-08-23 |
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