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Publication numberCN100449726 C
Publication typeGrant
Application numberCN 200480038956
PCT numberPCT/US2004/043517
Publication date7 Jan 2009
Filing date28 Dec 2004
Priority date31 Dec 2003
Also published asCN1898791A, DE112004002610T5, US7055229, US7757363, US20050139228, US20060179632, WO2005067030A1
Publication number200480038956.5, CN 100449726 C, CN 100449726C, CN 200480038956, CN-C-100449726, CN100449726 C, CN100449726C, CN200480038956, CN200480038956.5, PCT/2004/43517, PCT/US/2004/043517, PCT/US/2004/43517, PCT/US/4/043517, PCT/US/4/43517, PCT/US2004/043517, PCT/US2004/43517, PCT/US2004043517, PCT/US200443517, PCT/US4/043517, PCT/US4/43517, PCT/US4043517, PCT/US443517
InventorsB威尔克, D科利格, F乔希, TA雷浦科
Applicant英特尔公司
Export CitationBiBTeX, EndNote, RefMan
External Links: SIPO, Espacenet
Support system for semiconductor wafers and methods thereof
CN 100449726 C
Abstract  translated from Chinese
在其单独的芯片被封装之前,半导体晶片经历了不同的处理。 Prior to its single chip is packaged semiconductor wafer experienced different treatment. 这样的处理的非穷尽例举有晶片背面打磨、晶片背面金属化、用激光和锯的晶片切割、测试、好芯片标记、芯片排出和在胶带上的芯片放置。 Such a non-exhaustive exemplary wafer back grinding process has, wafer backside metallization, wafer with a laser and saw cut, tested, good chip marking, chip discharge and placed on the tape chip. 在处理的过程中需要对晶片进行机械支承。 During the processing of the wafer requires mechanical support. 晶片也需要在制造工厂(FAB)中的处理器具或封装设备之间进行运输。 Also needed between the wafer (FAB) of the treatment instrument or packaging equipment in the manufacturing factory shipping. 该半导体晶片可具有例如300毫米的直径和例如762微米的厚度。 The semiconductor wafer may have a diameter of 300 mm and a thickness, for example such as 762 microns. 在背面打磨之后,可将晶片的厚度减少到例如在大约50到大约100微米之间的厚度范围。 After the back grinding, the thickness of the wafer can be reduced to, for example between about 50 to about 100 microns thickness range. 这样的晶片是易碎的,并需要仔细的装卸。 Such wafers are fragile and require careful handling.
Claims(21)  translated from Chinese
1.一种方法,包括: 通过使半导体晶片的支承面处在低于所述半导体晶片的暴露表面上的气压的低气压,将所述半导体晶片固定到晶片支承系统,其中所述晶片支承系统包括一个穿孔面、一个相对表面、以及用于密封所述相对表面的隔膜,并且所述半导体晶片的支承面和所述半导体支承系统的穿孔面接触。 1. A method, comprising: a semiconductor wafer by the support surface of the semiconductor wafer at lower than the air pressure on the exposed surface of the low pressure, the semiconductor wafer is fixed to the wafer support system, wherein said wafer support system comprising a perforated surface, an opposing surface, and means for sealing said opposite diaphragm surface, and the semiconductor wafer support surface and the perforated surface in contact with the semiconductor support system.
2. 如权利要求l所述的方法,其特征在于,使所述支承面处在所述的低气压至少包括:在真空室内将所述半导体晶片放置成与所述晶片支承系统相接触; 将所述真空室内的气压降至所述的低气压; 密封所述晶片支承系统的相对表面;以及从所述真空室移去所述晶片支承系统和所述固定的半导体晶片。 2. A method as claimed in claim l, characterized in that said support surface in said low pressure includes at least: placing in the vacuum chamber of the semiconductor wafer into contact with said wafer support system; the The vacuum chamber pressure down to the low pressure; seal opposing surface of said wafer support system; and removing said wafer support system and said semiconductor wafer from said stationary vacuum chamber.
3. 如权利要求l所述的方法,其特征在于,使所述支承面处在所述的低气压至少包括-在处于第一温度的第一环境中将所述半导体晶片放置成与所述晶片支承系统相接触;密封所述晶片支承系统的相对表面;以及将所述晶片支承系统和所述固定的半导体晶片从所述第一环境移到处于低于所述第一温度的第二温度的第二环境。 3. The method according to claim l, characterized in that said support surface in said low pressure comprises at least - placed in the first and in the temperature of the semiconductor wafer in the first environment contacting the wafer support system; seal opposing surface of said wafer support system; and said wafer support system and said fixed first semiconductor wafer is moved from the environment at a second temperature lower than said first temperature The second environment.
4. 如权利要求l所述的方法,其特征在于,使所述支承面处在所述的低气压至少包括:将所述晶片支承系统的柔韧表面向内推向所述晶片支承系统的穿孔面;将所述半导体晶片放置成与所述晶片支承系统相接触;以及释放所述柔韧表面。 4. The method according to claim l, characterized in that said support surface in said low pressure includes at least: the flexible surface of said wafer support system inwards towards said wafer support system perforations surface; placing the semiconductor wafer is in contact with the wafer support system; and releasing said flexible surface.
5. 如权利要求l所述的方法,其特征在于,使所述支承面处在所述的低气压至少包括:将所述半导体晶片放置成与所述晶片支承系统相接触;以及将所述隔膜从所述穿孔面向外脱出。 The well; placing the semiconductor wafer in contact with the wafer support system: 5. A method as claimed in claim l, characterized in that said support surface in said low pressure comprises at least Escape from the outer membrane for perforations.
6、 如权利要求l所述的方法,其特征在于,还包括: 通过增加所述的低气压,从所述晶片支承系统释放所述半导体晶片。 6. The method according to claim l, characterized in that, further comprising: increasing said low pressure, releasing said semiconductor wafer from said wafer support system.
7、 如权利要求6所述的方法,其特征在于,增加所述低气压至少包括: 移除所述隔膜。 7. The method according to claim 6, characterized in that, to increase the low pressure at least comprising: removing the diaphragm.
8、 如权利要求6所述的方法,其特征在于,增加所述低气压至少包括: 将所述晶片支承系统的柔韧表面向内推向所述半导体晶片。 8. The method according to claim 6, characterized in that, to increase the low pressure at least comprises: a flexible surface of said wafer support system inwards towards said semiconductor wafer.
9、 如权利要求l所述的方法,其特征在于,还包括-通过使所述暴露表面处在低于或等于所述低气压的气压,将所述半导体晶片从所述晶片支承系统释放。 9. The method according to claim l, characterized in that, further comprising - by making the exposed surface at less than or equal to the pressure of the low pressure, the semiconductor wafer is released from the wafer support system.
10、如权利要求l所述的方法,其特征在于,还包括: 在保持在所述半导体晶片其它部分的支承面上的所述低气压的同时,通过增加在一个或多个芯片的支承表面上所述低气压,从所述晶片支承系统释放所述半导体晶片的所述一个或多个芯片。 10. The method according to claim l, characterized in that, further comprising: while maintaining a low pressure in the bearing surface of the other portion of the semiconductor wafer, by adding one or a plurality of chips bearing surface On the low pressure, releasing one of the semiconductor wafer from the wafer support system or multiple chips.
11、 如权利要求IO所述的方法,其特征在于,增加所述一个或多个芯片的支承面上的所述低气压至少包括:将所述晶片支承系统的柔韧表面的一个或多个部分向内推向所述半导体晶片的所述一个或多个芯片。 11, the IO as claimed in claim, characterized in that said one or more chips to increase the low pressure support surface comprising at least: a flexible surface of said wafer support system or more portions said inwardly toward said one or more semiconductor wafer chips.
12、 如权利要求IO所述的方法,其特征在于,增加所述一个或多个芯片的支承面上的所述低气压至少包括:穿透所述晶片支承系统的柔韧表面的一个或多个部分,所述一个或多个部分对应于所述半导体晶片的所述一个或多个芯片。 12, the IO as claimed in claim, characterized in that said one or more chips to increase the low pressure support surface comprising at least: penetrating a surface of the flexible support system or a plurality of wafer section, said one or more portions of the semiconductor wafer corresponding to one or more chips.
13、 如权利要求IO所述的方法,其特征在于,还包括: 通过将芯片挑选工具耦合到所述一个或多个芯片中的一个的暴露表面,从所述半导体晶片中分离所述一个或多个芯片中的所述一个。 13, as claimed in claim IO said method characterized by further comprising: a chip selection tool is coupled to the one or a plurality of chips in the exposed surface of the semiconductor wafer is separated from said one or said one of the plurality of chips.
14、 一种晶片支承系统,包括:具有穿孔面的主体,其中所述穿孔面支承半导体晶片,所述主体具有在所述穿孔面和所述主体相对表面之间的多个腔,其中所述腔具有到所述相对表面的孔;以及附贴到所述主体的相对表面以密封所述孔的隔膜。 14, a wafer support system, comprising: a main body having a perforated surface, wherein the perforated surface of the support wafer, said semiconductor body having a plurality of cavities between the opposing surfaces of the perforations and the body surface, wherein said chamber to said opposing surface having apertures; and affixed to an opposite surface of the body so as to seal the aperture diaphragm.
15. 如权利要求14所述的晶片支承系统,其特征在于,最小的所述腔在面积上等于所述半导体晶片上的最小芯片的面积。 15. The wafer support system according to claim 14, characterized in that the cavity in the smallest area is equal to the minimum chip area on the semiconductor wafer.
16. 如权利要求14所述的晶片支承系统,其特征在于,所述腔具有到所述穿孔面的开口,且所述腔的数量等于所述开口的数量。 16. The wafer support system of claim 14, wherein said cavity has an opening to the perforated surface, and the number of cavities equal to the number of said openings.
17. 如权利要求14所述的晶片支承系统,其特征在于,所述主体至少包括具有所述穿孔面的第一部分和具有所述相对表面的第二部分。 17. The wafer support system of claim 14, wherein said body comprises at least a first portion and a second portion having the perforated surface having the opposing surface.
18. 如权利要求14所述的晶片支承系统,其特征在于,所述隔膜是可移动的。 18. The wafer support system of claim 14, wherein said diaphragm is movable.
19. 如权利要求14所述的晶片支承系统,其特征在于,所述隔膜是柔韧的。 19. The wafer support system of claim 14, wherein said diaphragm is flexible.
20. 如权利要求14所述的晶片支承系统,其特征在于,所述隔膜是刚性的。 20. The wafer support system of claim 14, wherein said membrane is rigid.
21. 如权利要求14所述的晶片支承系统,其特征在于,所述穿孔面是刚性的。 Wafer support 21. A system according to claim 14, characterized in that said perforated surface is rigid.
Description  translated from Chinese

用于半导体晶片的支承系统及其方法 A support system and method for a semiconductor wafer

技术领域 Technical Field

本发明涉及用于半导体晶片的支承系统及其方法。 The present invention relates to a system and method for supporting a semiconductor wafer. 背景技术 Background

在其单独的芯片被封装之前,半导体晶片经过不同的处理。 Prior to its single chip is packaged semiconductor wafer after different treatment. 这种处理的非穷尽例举有晶片背面打磨、晶片背面金属化、用激光和锯的晶片切割、测试、 好芯片标记、芯片排出和胶带上的芯片放置。 This non-exhaustive exemplary wafer back grinding process there, wafer backside metallization, wafer with a laser and saw cut, test, good chip marking, chip and chip discharge placed on the tape. 在处理过程中需要对晶片进行机 In the process the wafer needs to be machine

械支承。 Mechanical support. 晶片也需要在制造工厂(FAB)中的处理器具或封装设备之间进行运输。 Also needed between the wafer (FAB) of the treatment instrument or packaging equipment in the manufacturing factory shipping.

半导体晶片可具有例如300毫米的直径和例如762微米的厚度。 And for example, a semiconductor wafer may have a thickness of 762 microns in diameter, for example 300 mm. 在背面打磨之后,可将晶片的厚度减少到例如在大约50到大约100微米之间的厚度范围。 After the back grinding, the thickness of the wafer can be reduced to, for example between about 50 to about 100 microns thickness range. 具有这种厚度的晶片是易碎的,并需要仔细的装卸。 A wafer having such a thickness is fragile and requires careful handling.

发明内容 DISCLOSURE

本发明旨在解决上述问题。 The present invention aims to solve the above problems.

根据本发明的一种方法,包括:通过使半导体晶片的支承面处在低于所述半导体晶片的暴露表面的气压,将所述半导体晶片固定到晶片支承系统,其中所述半导体晶片的支承面和所述半导体支承系统的穿孔面接触。 According to one method of the present invention, comprising: a semiconductor wafer by the support surface at the pressure lower than the exposed surface of the semiconductor wafer, the semiconductor wafer is fixed to the wafer support system, wherein the bearing surface of the semiconductor wafer and perforated surface of the semiconductor support system contacts.

根据本发明的一种晶片支承系统,包括:具有穿孔面的主体,其中所述穿孔面支承半导体晶片,所述主体具有在所述穿孔面和所述主体相对表面之间的多个腔,其中所述腔具有到所述相对表面的孔;以及附贴到所述主体的相对表面以密封所述孔的隔膜。 A wafer support system of the present invention, comprising: a main body having a perforated surface, wherein the perforated surface of the support wafer, said semiconductor body having a plurality of cavities between the opposing surfaces of the perforations and the body surface, wherein said chamber having a surface opposing to the hole; and affixed to an opposite surface of the body so as to seal the aperture diaphragm.

附图说明 Brief Description

本发明的实施例作为示例示出,且不限于附图中的图形,在附图中,同样的标号指示对应的、相似或类似的元件,其中: Embodiments of the present invention is shown as an example, and not limited to the drawing of the graphic, in the drawings, like reference numerals indicate corresponding, analogous or similar elements and in which:

图1是依照本发明某些实施例的示例性半导体晶片和示例性晶片支承系统的分解图; Figure 1 is an exploded view in accordance with the present invention, some exemplary semiconductor wafer and wafer support system of the exemplary embodiment;

图2是依照本发明某些实施例的图1的部分半导体晶片和图1的部分晶片 Figure 2 is a diagram in accordance with certain embodiments of the present invention, a portion of the portion of the wafer of semiconductor wafer 1 and Fig. 1

支承系统的剖视图; A cross-sectional view of the support system;

图3是依照本发明某些实施例的图1的部分晶片支承系统的剖视图; Figure 3 is a cross-sectional view of a portion of the wafer support system according to the present invention, certain embodiments of FIG. 1;

图4是依照本发明某些实施例的用于将半导体晶片固定到晶片支承系统 Figure 4 in accordance with certain embodiments of the present invention for fixing a semiconductor wafer to the wafer support system

的方法的流程图; Flow chart of a method;

图5是依照本发明某些实施例的用于将半导体晶片固定到晶片支承系统的另一方法的流程图; 5 is a flowchart in accordance with certain embodiments of the present invention for fixing a semiconductor wafer to another wafer support system of the method;

图6是依照本发明某些实施例的用于将半导体晶片固定到晶片支承系统的再一种方法的流程图; 6 is a flowchart for a method according to some fixed and then the semiconductor wafer to the wafer support system of an embodiment of the present invention;

图7是依照本发明某些实施例的用于将半导体晶片固定到晶片支承系统的还一种方法的流程图; 7 in accordance with certain embodiments of the present invention, a flowchart for a method of a semiconductor wafer is also fixed to the wafer support system;

图8A、 8B、 8C和8D是依照本发明某些实施例的用于将半导体晶片从晶片支承系统释放的替换方法的流程图; Fig. 8A, 8B, 8C and 8D is a flowchart of a method according to the present invention to replace some of the semiconductor wafer is released from the wafer support system for embodiment;

将要理解的是,为了简化和使说明清楚,在图中示出的元件不一定是按照比例画出的。 It will be understood that, in order to simplify and make the explanation clear, the elements are shown are not necessarily drawn to scale. 例如,为了清楚,某些元件的尺寸相对于其它元件已经被放大。 For example, for clarity, the size of some of the elements relative to other elements have been enlarged.

具体实施方式 DETAILED DESCRIPTION

在下面的详细描述中,陈述了许多特定的细节,以便提供对本发明实施例的透彻理解。 In the detailed description that follows, numerous specific details are set forth in order to provide a thorough understanding of an embodiment of the present invention. 然而,本领域普通技术人员将理解的是,可以在没有这些细节的情况下来实施本发明的实施例。 However, one of ordinary skill in the art will understand that the embodiments of the present invention may be practiced without these details down. 在其它情况下,没有详细描述公 In other cases, there is no detailed description of the public

知的方法、程序、组件和电路,以使不会混淆本发明。 Known methods, procedures, components and circuits, so that does not obscure the invention.

参照图1和图2,示出了依照本发明某些实施例的示例性半导体晶片2 和晶片支承系统4。 Referring to FIGS. 1 and 2, there is shown a semiconductor wafer in accordance with certain exemplary embodiments of the present invention, the support system 2 and the wafer 4. 图l是半导体晶片2和晶片支承系统4的分解图,而图2是部分半导体晶片2和部分晶片支承系统4沿着横截面A的剖视图,图3 Figure l is a semiconductor wafer 2 and the wafer 4 in an exploded view of the support system, and FIG. 2 is a cross-sectional view of a portion of the wafer and the support system 4 A cross-section along a portion of the semiconductor wafer 2, 3

是沿着横截面B的晶片支承系统4的一部分的剖视图。 It is a sectional view taken along the cross-section B of the portion of the wafer support system 4.

如图1所示,半导体晶片2具有圆盘形状,尽管也可设想任何其它形状的半导体晶片2。 As shown in Figure 1, the semiconductor wafer 2 has a disk shape, are also contemplated although any other shape of the semiconductor wafer 2. 半导体晶片2包括通过划片线(也称为"街")分开的芯片,诸如示例的划片线8分隔的芯片6。 2 comprises a semiconductor wafer by dicing lines (also referred to as "Street") separate chip, such as the example of the scribe line 8 separated chip 6. 芯片6可具有矩形形状,尽管也可设想任何其它形状的芯片6。 Chip 6 may have a rectangular shape, although any other shape contemplated chip 6. 此外,尽管未在图1中明确地示出,半导体晶片2可包括不同形状和尺寸的芯片。 Moreover, although not explicitly shown in FIG. 1, the semiconductor wafer 2 may include different shapes and sizes of chips.

半导体晶片2可经过不同的处理,诸如表面打磨和表面金属化。 The semiconductor wafer 2 may be subjected to different treatment, such as surface grinding and surface metallization. 此外, 诸如被标注为6"的芯片的特殊芯片6可由例如激光锯或机械锯从半导体晶片2中锯下。锯掉的芯片6"可从半导体晶片2排出,并可放置在胶带上(未示出)。 Moreover, such labeled as 6 "special chip chip 6 can be for example a laser or a mechanical saw sawing from the semiconductor wafer 2 in the saw. Amputated chip 6" can be discharged from the semiconductor wafer 2, and can be placed on the tape (not shown).

半导体晶片2直径的非穷尽例举包括大约150毫米、大约200毫米和大约300毫米。 The diameter of the semiconductor wafer 2 non-exhaustive example includes about 150 mm, about 200 mm and about 300 mm. 半导体晶片2的厚度在例如大约700微米到大约800微米的范围之内,例如厚度约为762微米。 The thickness of the semiconductor wafer 2 is in the range, for example about 700 microns to about 800 microns of, e.g., a thickness of about 762 microns. 表面打磨处理可将半导体晶片2的厚度减少到例如大约50到大约100微米的范围内。 Surface can be polished to reduce the thickness of the semiconductor wafer 2 into the range, for example from about 50 to about 100 microns.

晶片支承系统4可具有拥有开口12的充分刚性的穿孔面10。 Wafer support system 4 has an opening 12 may have sufficient rigidity perforated surface 10. 开口12 可集中在由和半导体晶片2基本具有相同形状的曲线14所限定的区域内。 Opening 12 may be concentrated in the second area substantially having the same shape as defined by the curve 14 and the semiconductor wafer. 开口12可具有基本为圆形的形状,尽管也可设想开口12的任何其它形状。 Opening 12 may have a substantially circular shape, although any other shape contemplated opening 12.

通过放置与穿孔面10相接触的半导体晶片2的受支承面16使得开口12基本由半导体晶片2阻挡,且此外通过使半导体晶片2的暴露表面18 处于比透过开口12施加给支承面16的气压更高的气压,可将半导体晶片2 固定到晶片支承系统4。 By the semiconductor wafer is placed in contact with the perforated surface 10 by the support surface 16 so that the opening 12 2 Basic barrier from a semiconductor wafer 2, and in addition by the semiconductor wafer 2 surface 18 is exposed through the opening 12 than is applied to the bearing surface 16 Pressure higher pressure, the semiconductor wafer 2 can be fixed to the wafer support system 4.

在将半导体晶片2固定到晶片支承系统4的同时,可将半导体晶片2 与晶片支承系统4 一起运送。 In the semiconductor wafer 2 is fixed to the support system 4 while the wafer may be a semiconductor wafer 2 and 4 together with the delivery of the wafer support system. 此外,在将半导体晶片2固定到晶片支承系统4的同时,可将诸如晶片背面打磨、晶片背面金属化、用激光和锯的晶片切割、测试、好芯片标记、芯片排出和在胶带上的芯片放置的处理施加于半导体晶片2。 In addition, the semiconductor wafer 2 while the wafer is fixed to a support system 4, such as the back of the wafer can be polished wafer backside metallization, wafer with a laser and saw cut, test, good chip marking, chip discharge and chips on tape Place the processing is applied to the semiconductor wafer 2. 在装卸、运输和处理的过程中,穿孔面10的刚性会降低或消除半导体晶片2的可挠性。 In the handling, transport and processing, the rigidity perforated surface 10 of the semiconductor wafer to reduce or eliminate the flexible 2.

通过使暴露的表面18处于比透过开口12施加给支承面16的气压更低 By making the exposed surface 18 is lower than the atmospheric pressure through the opening 12 is applied to the bearing surface 16

或基本相等的气压,可将已固定的半导体晶片2从晶片支承系统4释放。 Or substantially equal to the pressure, it can have fixed the semiconductor wafer 2 is released from the wafer support system 4.

此外,在保持透过其它开口12施加给支承面16的气压的同时,通过增加透过由那些锯掉的芯片所阻挡的开口(例如开口12")施加给支承面16的气压, 已固定的半导体晶片2的一个或多个锯掉的芯片(例如芯片6")可以从晶片支承系统4释放出。 Further, while maintaining the other through opening 12 is applied to the support surface 16 of the pressure, by increasing the sawed through by those who blocked the opening of the chip (e.g., an opening 12 ') is applied to the pressure bearing surface 16, has a fixed The semiconductor wafer 2 to amputate one or more chips (such as a chip 6 ") can be released from the wafer support system 4. 在从晶片支承系统4中释放出之后,可通过芯片挑选工具(未示出)使晶片支承系统4与锯掉的芯片6"分离。由于没有将锯掉的芯片6"保持到晶片支承系统4的粘合剂,用芯片挑选工具移去锯掉的芯片6"不涉及从粘合表面移去芯片通常所需的拉、剥离或撬。 After release from the wafer support system 4, by the chip selection tool (not shown) so that the wafer support system 4 and saw off the chip 6 "separation. In the absence of the chip will be cut off 6" wafer support system 4 to keep the The binder is removed with the chip selection tool amputated chip 6 "does not involve removing the chip from the adhesive surface of the normally required pull, peel or pry.

如图2所示,晶片支承系统4可包括作为具有穿孔面10和开口12的基本刚性的穿孔板30的第一部分。 As shown in Figure 2, the wafer support system 4 may comprise a substantially rigid plane perforated plate with perforations 10 and the opening 12 of the first portion 30. 此外,晶片支承系统4可包括具有多个腔34的第二部分32。 Further, the wafer support system 4 may comprise a second portion 32 having a plurality of cavities 34.

如图3所示,腔34可以蜂窝结构排列,尽管也可设想其它腔的排列。 As shown in Figure 3, the cavity 34 can be arranged in a honeycomb structure, although other cavity arrangement contemplated. 例如,腔34可具有六边形的形状,尽管可设想腔34的任何其它形状,诸如矩形、圆形等。 For example, the cavity 34 may have a hexagonal shape, although any other shape is contemplated lumen 34, such as rectangular, circular and the like.

根据本发明的第一实施例,对于穿孔板30中的所有开口12,部分32 可具有相对应的腔34。 According to a first embodiment of the present invention, the perforated plate 30. All openings 12, 32 may have a corresponding portion of the cavity 34. 例如,腔34"可对应于开口12"。 For example, the chamber 34 "may correspond to the opening 12."

根据本发明的第二实施例,对于穿孔板30中的所有开口12,部分32 可具有多个对应的腔34。 According to a second embodiment of the present invention, the perforated plate 30 in the opening 12 of all, some 32 may have a plurality of corresponding cavities 34. 根据本发明的第三实施例,对于部分32中的所有腔34,穿孔板30可具有多个开口12。 According to the third embodiment of the present invention, in section 32 for all cavity 34, a perforated plate 30 may have a plurality of openings 12.

可选择腔34的数量、大小、形状和排列以适合半导体晶片上的芯片的排列。 Alternatively cavity number, size, shape and arrangement 34 are arranged to fit on a chip of a semiconductor wafer. 此外,腔34中的最小者在面积上可基本上等于半导体晶片2上的芯 In addition, the minimum of the chamber 34 in the area may be substantially equal to the core 2 on a semiconductor wafer

片中的最小者的面积。 The smallest area of the film.

腔34在部分32的表面38上可具有孔36。 Cavity 34 in the upper surface 38 of portion 32 may have holes 36. 根据本发明的一个实施例, 腔34可具有一个对应的孔36。 According to one embodiment of the present invention, the cavity 34 may have a corresponding bore 36. 根据本发明的第二实施例,腔34可具有一个以上的对应孔36。 According to a second embodiment of the present invention, the cavity 34 may have one or more corresponding holes 36.

可附着穿孔板30和部分32,使得穿孔板30的表面40和部分32的表面42相接触。 And a perforated plate 30 may be attached to portion 32, so that the surface portions 40 and 32 contact the surface 42 of the perforated plate 30. 或者,可将穿孔板30和部分32制造成具有带开口12的表面10和带孔36的相对表面38的单一体,其中开口和孔由腔连接。 Alternatively, the perforated plate 30 and the portion 32 manufactured with opposite surfaces 10 and 12 of the opening 36 holes with a single one of the 38 in which the opening and the hole from the cavity is connected.

如果: In case:

a. 半导体晶片2的支承面16与穿孔面10相接触,使得开口12被半导体晶片2基本阻挡,其中穿孔板30起到在支承面16和部分32的表面42之间的衬垫的作用。 a. 2 of the semiconductor wafer support surface 16 in contact with the perforated surface 10, so that the opening 12 is substantially blocked the semiconductor wafer 2, wherein the perforated plate 30 functions as the pad 16 and the surface of the support surface 42 of portion 32 in between.

b. 将隔膜50附着到部分32,使得孔36基本被密封。 b. Place the diaphragm 50 is attached to part 32 so that the hole 36 is substantially sealed. 气体可以基本上被封闭在腔34内。 Gas may be substantially enclosed within the cavity 34.

封闭在腔34中的气体可透过开口12将力施加到支承面16。 Enclosed in the gas chamber 34 through the opening 12 may be applied to the force bearing surface 16. 此外,在腔34外部的气体可将力施加给暴露的表面18。 In addition, the external gas chamber 34 can be applied to the exposed surface 18 of the force.

图4是依照本发明某些实施例的用于将半导体晶片2固定到晶片支承系统4的方法的流程图。 Figure 4 in accordance with certain embodiments of the present invention for fixing a semiconductor wafer to the wafer support system 4 Method of Scheme 2. 可将半导体晶片2和晶片支承系统4放置在第一环境中,例如真空室,且使支承面16与穿孔面IO接触,使得开口12基本被阻挡(-402-)。 The semiconductor wafer may be a wafer support system 2, and 4 is placed in the first environment, such as a vacuum chamber, and the support surface 16 in contact with the perforated surface IO, so that the opening 12 is substantially blocked (-402-). 可减小第一环境内的气压(-404-)。 Can reduce the pressure within the first environment (-404-). 可将隔膜50附贴到部分32,使得孔36基本被密封(-406-)。 The diaphragm 50 can be affixed to section 32, so that the hole 36 is substantially sealed (-406-). 然后,可将晶片支承系统4和半导体晶片2从第一环境移到气压高于第一环境内气压的第二环境(-408-)。 Then, the wafer support system can 4 and the semiconductor wafer 2 from the first environment to a pressure higher than the ambient air pressure within the first second environment (-408-). 从而,腔34内的气压可低于暴露表面18上的气压。 Thus, the pressure within the chamber 34 may be lower than the air pressure on the exposed surface 18.

图5是依照本发明某些实施例的用于将半导体晶片2固定到晶片支承系统4的另一种方法的流程图。 FIG 5 in accordance with certain embodiments of the present invention for a semiconductor wafer 2 is fixed to the flowchart of another method of the wafer support system 4. 隔膜50可以是柔韧的,并可以被附贴部分32,使得孔36基本被密封(-502-)。 Diaphragm 50 may be flexible, and may be affixed to portion 32, so that the hole 36 is substantially sealed (-502-). 可将隔膜50向内推进腔34 (-504-)。 The diaphragm 50 can be pushed inwards chamber 34 (-504-). 然后, 可将支承面16放置成与穿孔面10相接触,使得开口12基本被阻挡(-506-), 而隔膜50可被释放,使得它不再被推进腔34 (-508-)。 Then, the supporting surface 16 can be placed in contact with the perforated surface 10, so that the opening 12 is substantially blocked (-506-), and the diaphragm 50 can be released, so that it is no longer advancing chamber 34 (-508-). 从而,在腔34内的 Thus, in the chamber 34

气压可低于在暴露表面18上的气压。 Pressure can be less than the pressure on the exposed surface 18.

图6是依照本发明某些实施例的用于将半导体晶片2固定到晶片支承系统4的另一种方法的流程图。 Figure 6 is in accordance with certain embodiments of the present invention for fixing a semiconductor wafer to another wafer support system 4. The method of Scheme 2. 在本发明的某些实施例中,部分32可选地具有延伸超出表面38的围墙54,而隔膜50可以是刚性的。 In certain embodiments of the present invention, optionally having a portion 32 extending beyond the surface 38 of the wall 54, and the diaphragm 50 may be rigid. 可将隔膜50附贴到部分32, 使得孔36基本被密封(-602-)。 The diaphragm 50 can be affixed to section 32, so that the hole 36 is substantially sealed (-602-). 可将支承面16放置成与穿孔面IO接触,使得开口12基本被阻挡(-604-)。 Supporting surface 16 may be placed in contact with the perforated surface IO, so that the opening 12 is substantially blocked (-604-). 然后可将隔膜50从表面38脱出,使得隔膜50仍在围墙54内以形成空隙56 (-606-)。 Then the diaphragm 50 can emerge from the surface 38 so that the inner wall of the diaphragm 50 is still 54 to form a gap 56 (-606-). 空隙56和腔34可以由隔膜50和围墙54密封。 Gap 56 and the chamber 34 may be sealed by the diaphragm 50 and the wall 54. 从而,在腔34和空隙56内的气压可低于在暴露表面18上的气压。 Thus, the pressure within the chamber 34 and the space 56 may be lower than the pressure on the exposed surface 18.

图7是依照本发明某些实施例的用于将半导体晶片2固定到晶片支承系统4的另一种方法的流程图。 7 in accordance with certain embodiments of the present invention for the semiconductor wafer 2 is fixed to a flowchart of another method of the wafer support system 4. 可将半导体晶片2和晶片支承系统4放在处于第一温度的第一环境中,且支承面16被放置成与穿孔面10接触,使得开口12基本被阻挡(-702-)。 2 and may be a semiconductor wafer 4 on the wafer support system in the first environment first temperature, and the supporting surface 16 is placed in contact with a perforated surface 10, so that the opening 12 is substantially blocked (-702-). 可将隔膜50附贴到部分32,使得孔36被充分密封(-704-)。 The diaphragm 50 can be affixed to section 32, so that the hole 36 is fully sealed (-704-). 然后,将半导体晶片2和晶片支承系统4从第一环境移到处于低于第一温度的第二温度的第二环境(-706-)。 Then, the semiconductor wafer 2 and wafer support system 4 is moved at a second temperature lower than the first temperature, a second environment from the first environment (-706-). 由于在第一环境中的空气没有第二环境中的空气稠密, 一旦晶片支承系统4和半导体晶片2处于第二环境中,腔34内的气压会低于暴露表面18上的气压。 Since the air in the first environment is not dense second ambient air, once the wafer support system 4 and the semiconductor wafer 2 is in the second environment, the air pressure inside the chamber 34 will be lower than 18 on the exposed surface of the pressure.

图8A、 8B、 8C和8D是依照本发明某些实施例的用于将半导体晶片2从晶片支承系统4释放出的替换方法的流程图。 Figure 8A, 8B, 8C and 8D are a flowchart in accordance with certain embodiments of the present invention for the semiconductor wafer 2 from the wafer support system 4 to release the replacement method.

在图8A中,可以从晶片支承系统4移开隔膜50 (-802-),以使在腔34 内的气压变为基本上等于在暴露表面18上的气压,因此从晶片支承系统释放出半导体晶片2。 In Fig. 8A, can be removed from the wafer support system 4 diaphragm 50 (-802-) so that the pressure in the chamber 34 becomes substantially equal to the pressure on the exposed surface 18, and therefore released from the semiconductor wafer support system wafer 2.

在图8B中,可穿透隔膜50 (-804。,在腔34内的气压可变得与暴露表面18上的气压相等。在本方法的修改版本中, 一个或多个锯掉的芯片可从晶片支承系统4单独地释放。例如,以这样的方式,即在腔34"中气压可变成等于或高于在晶片支承系统4周围的气压而不影响在其它腔34中的气压,通过将柔韧的隔膜50穿透进入孔36",锯掉的芯片6"可以从晶片支承系统4中单独地释放。 In Fig. 8B, penetrable septum 50 (-804., The pressure in the chamber 34 and the pressure may become exposed surface 18 are equal. In the modified version of the method, one or more chips can be cut off individually released from the wafer support system 4, for example, in such a manner that in the chamber 34 'of the pressure may become equal to or higher than the pressure in the wafer support 4 around the system without affecting the pressure in the other chamber 34 by The flexible membrane 50 penetrates into the hole 36 ", cut off the chip 6" can be individually released from the wafer support system 4.

在图8C中,若隔膜50是柔韧的,可将隔膜50向内推进腔34(-806-), 而在腔34内的气压可以变得等于或高于在暴露表面18上的气压。 In FIG. 8C, when the diaphragm 50 is flexible, diaphragm 50 can be pushed inwards cavity 34 (-806-), and the pressure in the chamber 34 may be equal to or higher than the pressure on the exposed surface 18. 在本方法的修改版本中, 一个或多个锯掉的芯片可以从晶片支承系统4被单独地释放。 In the modified version of the method, one or more amputated chips can be individually released from the wafer support system 4. 例如,通以这样的方式,即在腔34"中气压可变成等于或高于在晶片支承系统4周围的气压而不影响在其它腔34中的气压,通过将柔韧的隔膜50推进孔36",锯掉的芯片6"可以从晶片支承系统4被单独地释放。 For example, through in such a manner that in the chamber 34 'of the pressure may become equal to or higher than the pressure in the wafer support 4 around the system without affecting the other pressure chamber 34, the flexible diaphragm 50 through holes 36 to promote "amputated chip 6 'can be individually released from the wafer support system 4.

例如,如果部分32具有延伸超过表面38的围墙54且隔膜50是刚性的隔膜,图8D是可适用的。 For example, if the portion 32 having a surface 38 extends beyond wall 54 and the diaphragm 50 is a rigid membrane, 8D is applicable. 隔膜50可以被向内移向表面38 (-808-)。 Diaphragm 50 may be moved toward the surface 38 inwardly (-808-). In

腔34和空隙56内的气压可以增加并可变得等于或高于在暴露表面18上的气压。 Pressure chamber 34 and the space can be increased within 56 becomes equal to or higher than the pressure on the exposed surface 18.

尽管已经在这里例示和描述了本发明的某些特征,对本领域普通技术人员而言,现在将出现许多修改、替换、改变和等效。 Despite illustrated and described herein certain features of the invention, those of ordinary skill in the art will now be many modifications, substitutions, changes and equivalents. 因此,要理解的是, 所附的权利要求书旨在覆盖落入本发明精神范围内的所有这样的修改和变化。 Therefore, it is understood that the appended claims are intended to cover all such modifications and variations within the spirit of the present invention.

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Classifications
International ClassificationH01L21/683, H01L21/687, H01L21/673, B24B37/04, H01L21/68
Cooperative ClassificationH01L21/6838, Y10T29/53961, B24B37/30
European ClassificationB24B37/30, H01L21/683V
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7 Jan 2009C14Granted