CN100444027C - Method for making reverse ladder structure by using architecture-complementary micro-patterning technique - Google Patents
Method for making reverse ladder structure by using architecture-complementary micro-patterning technique Download PDFInfo
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- CN100444027C CN100444027C CNB2006100169956A CN200610016995A CN100444027C CN 100444027 C CN100444027 C CN 100444027C CN B2006100169956 A CNB2006100169956 A CN B2006100169956A CN 200610016995 A CN200610016995 A CN 200610016995A CN 100444027 C CN100444027 C CN 100444027C
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- polyvinyl pyrrolidone
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Abstract
The present invention belongs to a micro patterning processing method for complementary structures. Firstly, a microstructure with a positive trapezium cross section is made at the base surface of a capillary micro mould; using the structure as support, another one layer of thin film is coated on the surface; then, adopting solvents which can dissolve the microstructure made of the capillary micro mould and can not dissolve the thin film on the surface dissolves the microstructure and drives the thin film on the surface to flake off together; accordingly, a microstructure with an inverse trapezium cross section is left on the surface of the base. The structure can be used in separating an organic semiconductor layer from an electrode layer of the organic flat panel display; compared with the prior art, the present invention has the advantages of simple equipment and process and has the characteristic of making inverse trapezium structures of multiple materials in principle.
Description
Technical field
The invention belongs to a kind of micro-patterning job operation, particularly a kind of method that is used for the organic luminous layer and the making reverse ladder structure by using architecture-complementary micro-patterning technique that the electrode separation device is made of the demonstration of organic electroluminescent matrix.
Background technology
Organic light emitting display is owing to characteristics such as flexible, light-duty, low energy consumption, wide visual angle become one of flat panel display of present hot topic.When being applied to organic electroluminescent LED in the flat pannel display, diode need be arranged as matrix form.The diode of arranged generally adopts the method regulation of column electrode and the square crossing of row electrode.At patterning on the substrate of column electrode, in order to realize the separation of row electrode, and in order to protect the performance of organic semiconductor layer, need to select the micro-patterning method that is suitable for.
Prior art generally adopts mask to be placed between evaporation source and deposition substrate, carries out the method for direct evaporation then.This method technology is simple, can protect the performance of Organic Light Emitting Diode, but the processing matrix precision is subjected to the restriction of mask precision and vapo(u)rization system precision.
Also there is the photoetching method of employing to make inverted trapezoidal structure (undercut structure), the xsect of this structure is inverted trapezoidal, be structure wide at the top and narrow at the bottom, can realize the separation of organic semiconductor layer and electrode layer as separation scraper after organic semiconductor layer and electrode layer deposition.The 1075th page of " advanced material " the 15th volume of being published by Wiley publishing house on July 4th, 1 reported the article of people such as Korea S LeeHong H. " fall the making of trapezoidal three-dimensional structure and the application in Organic Light Emitting Diode thereof " by name.Adopt the soft template of the inverted trapezoidal structure making silicon rubber of photoetching in this article, use this soft template and adopt the method for the little molding of capillary, capillary epoxy resin and solidify after obtain the inverted trapezoidal structure of epoxy resin and be used for organic semiconductor layer separating with electrode layer is post-depositional.Because exist the lithographic equipment complex and expensive in the photoetching process, process requires to control environment temperature and shortcomings such as cleanliness factor, procedure of processing complexity, and the epoxy resin inverted trapezoidal structure that the little molding of the capillary of above introduction is made, though compare the requirement that has overcome expensive device and severe rugged environment with photoetching method, simplified procedure of processing simultaneously, but the inverted trapezoidal structure of epoxy resin can not be used for stripping technology.
Summary of the invention
In order to overcome the shortcoming of above two kinds of technology, the invention provides a kind of method that is used for the organic luminous layer and the making reverse ladder structure by using architecture-complementary micro-patterning technique that the electrode separation device is made of the demonstration of organic electroluminescent matrix, can realize that the inverted trapezoidal structure of solubility organic film is made.
At first adopt the method for the little molding of capillary, have the microstructure of trapezoid xsect, apply other thin film then thereon in the making of target substrate surface.Select a kind of solvent then for use, this solvent can dissolve the fine structure material that the little molding of capillary is made, but to being coated in the not effect of its surperficial membraneous material.The microstructure of making at the little molding of capillary drives and is coated in its surperficial film and comes off when substrate is dissolved, and stays the microstructure with trapezoidal cross-section at substrate surface.
Concrete steps and the condition of implementing this method are described below:
1), as shown in Figure 1, selecting the surfacial pattern xsect is the dimethyl silicone polymer soft template 2 of trapezoid structure, dimethyl silicone polymer soft template 2 is placed on the target substrate 1, forms capillary grooves 3 between dimethyl silicone polymer soft template 2 and the target substrate 1.With mass concentration is that the aqueous solution of the polyvinyl pyrrolidone of 10-30% is added to capillary grooves 3 ports, the aqueous solution for the treatment of polyvinyl pyrrolidone is placed on the aqueous solution drying that makes polyvinyl pyrrolidone in the 30-80 ℃ of drying box together with dimethyl silicone polymer soft template 2 and target substrate 1 after flowing to capillary grooves 3 under the effect of capillary force.
2), dimethyl silicone polymer soft template 2 is peeled off from dried target substrate 1, the photoresist film 5 of the suitable thickness of maximum height of coating and polyvinyl pyrrolidone microstructure on the target substrate 1 with polyvinyl pyrrolidone 4 patterns is then with photoresist film 5 oven dry.
3), with step 2) target substrate 1 that obtains after handling is placed in the water, polyvinyl pyrrolidone 4 dissolvings, and drive and be coated in its surperficial photoresist film 5 and peel off.To obtain the inverted trapezoidal structure 6 of photoresist on the target substrate 1 through 1 drying of the target substrate after the above processing.
The described target base plate 1 of method of the present invention has the glass of indium tin oxide for glass or surface deposition.
Compare with photoetching technique, method of the present invention is used only needs to use simple equipment such as drying box and spin coating instrument, and process only needed for three steps, so processing technology is simpler.Owing to adopted pure water as main solvent in the processing, therefore can effectively reduce pollution to environment.Simultaneously to have processed and obtained precision be 5 microns pattern to above method, is higher than 10 microns precision of the inverted trapezoidal structure that general photoetching technique processes.Make the technology of epoxy resin inverted trapezoidal structure compares with the little molding of capillary, the structure that method of the present invention is made not only can be used for organic layer and the electrode separation that the organic electroluminescent matrix shows, also can be used for stripping technology, so the epoxy resin inverted trapezoidal structure that the structure of the present invention's making is made than the little molding of capillary has more wide applications.
Description of drawings
The process synoptic diagram of the method for Fig. 1 making reverse ladder structure by using architecture-complementary micro-patterning technique.
The A of Fig. 1 is the synoptic diagram that dimethyl silicone polymer soft template 2 and target substrate 1 are formed capillary grooves 3.
The B of Fig. 1 is the synoptic diagram that dimethyl silicone polymer soft template 2 and target substrate 1 are formed capillary grooves 3 and filled polyethylene pyrrolidone 4.
The C of Fig. 1 is the synoptic diagram behind polyvinyl pyrrolidone 4 surface applied photoresist films 5.
The D of Fig. 1 is the synoptic diagram of the inverted trapezoidal structure 6 of the photoresist that finally obtains.
Among Fig. 1,1-substrate, 2-dimethyl silicone polymer soft template, 3-capillary grooves, 4-polyvinyl pyrrolidone, 5-photoresist film, the inverted trapezoidal structure of 6-photoresist.
The electron scanning micrograph of the inverted trapezoidal structure 6 of the photoresist that the method for Fig. 2 making reverse ladder structure by using architecture-complementary micro-patterning technique is made.
Embodiment
Embodiment 1
1), to select the surfacial pattern xsect be the dimethyl silicone polymer soft template 2 of trapezoid structure, and dimethyl silicone polymer soft template 2 is placed on the substrate of glass 1,1 of dimethyl silicone polymer soft template 2 and substrate of glass form capillary grooves 3.With concentration is that the polyvinyl pyrrolidone aqueous solution of 10% weight content is added to capillary grooves 3 ports, treat the polyvinyl pyrrolidone aqueous solution after flowing to capillary grooves 3 under the effect of capillary force, dimethyl silicone polymer soft template 2 and substrate of glass 1 are placed on together in 30 degrees centigrade the drying box and make polyvinyl pyrrolidone aqueous solution drying.
2), dimethyl silicone polymer soft template 2 is peeled off from dried substrate of glass 1, coating photoresist film 5 on the substrate of glass 1 with polyvinyl pyrrolidone 4 patterns is then with photoresist film 5 oven dry.
3), the substrate of glass 1 of above processing is placed in the water, polyvinyl pyrrolidone 4 dissolvings, and drive and be coated in its surperficial photoresist film 5 and peel off.To obtain the inverted trapezoidal structure 6 of photoresist figure through 1 drying of the substrate of glass after the above processing.
Embodiment 2
1), selecting the surfacial pattern xsect is the dimethyl silicone polymer soft template 2 of trapezoid structure, dimethyl silicone polymer soft template 2 is placed into surface deposition to be had on the substrate of glass of indium tin oxide (hereinafter to be referred as " ito glass substrate ") 1, and 1 of dimethyl silicone polymer soft template 2 and ito glass substrate form capillary grooves 3.With concentration is that the polyvinyl pyrrolidone aqueous solution of 20% weight content is added to capillary grooves 3 ports, treat the polyvinyl pyrrolidone aqueous solution after flowing to capillary grooves 3 under the effect of capillary force, dimethyl silicone polymer soft template 2 and ito glass substrate 1 are placed on together in 50 degrees centigrade the drying box and make polyvinyl pyrrolidone aqueous solution drying.
2), dimethyl silicone polymer soft template 2 is peeled off from dried ito glass substrate 1, coating photoresist film 5 in the ito glass substrate 1 with polyvinyl pyrrolidone 4 patterns is then with photoresist film 5 oven dry.
3), the ito glass substrate 1 of above processing is placed in the water, polyvinyl pyrrolidone 4 dissolvings, and drive and be coated in its surperficial photoresist film 5 and peel off.To obtain the inverted trapezoidal structure 6 of photoresist figure through ito glass substrate 1 drying after the above processing.
Embodiment 3
1) selecting the surfacial pattern xsect is the dimethyl silicone polymer soft template 2 of trapezoid structure, and dimethyl silicone polymer soft template 2 is placed on the substrate of glass 1, and 1 of dimethyl silicone polymer soft template 2 and substrate of glass form capillary grooves 3.With concentration is that the polyvinyl pyrrolidone aqueous solution of 30% weight content is added to capillary grooves 3 ports, treat the polyvinyl pyrrolidone aqueous solution after flowing to capillary grooves 3 under the effect of capillary force, dimethyl silicone polymer soft template 2 and substrate of glass 1 are placed on together in 80 degrees centigrade the drying box and make polyvinyl pyrrolidone aqueous solution drying.
2) dimethyl silicone polymer soft template 2 is peeled off from dried substrate of glass 1, coating photoresist film 5 on the substrate of glass 1 with polyvinyl pyrrolidone 4 patterns is then with photoresist film 5 oven dry.
3) substrate of glass 1 with above processing is placed in the water, polyvinyl pyrrolidone 4 dissolving, and drive and be coated in its surperficial photoresist film 5 and peel off.To obtain the inverted trapezoidal structure 6 of photoresist figure through 1 drying of the substrate of glass after the above processing.
Claims (8)
1, the method for making reverse ladder structure by using architecture-complementary micro-patterning technique is characterized in that, step and condition are as follows:
1), selecting the surfacial pattern xsect is the dimethyl silicone polymer soft template (2) of trapezoid structure, dimethyl silicone polymer soft template (2) is placed on the target substrate (1), form capillary grooves (3) between dimethyl silicone polymer soft template (2) and the target substrate (1), with mass concentration is that the aqueous solution of the polyvinyl pyrrolidone of 10-30% is added to capillary grooves (3) port, the aqueous solution for the treatment of polyvinyl pyrrolidone is placed on the aqueous solution drying that makes polyvinyl pyrrolidone in the 30-80 ℃ of drying box together with dimethyl silicone polymer soft template (2) and target substrate (1) after flowing to capillary grooves (3) under the effect of capillary force;
2), dimethyl silicone polymer soft template (2) is peeled off from dried target substrate (1), at the photoresist film (5) of the last coating of the target substrate (1) with polyvinyl pyrrolidone (4) pattern, then photoresist film (5) is dried with the suitable thickness of maximum height of polyvinyl pyrrolidone microstructure;
3), with step 2) target substrate (1) that obtains after handling is placed in the water, polyvinyl pyrrolidone (4) dissolving, and drive and to be coated in its surperficial photoresist film (5) and to peel off, to obtain the inverted trapezoidal structure (6) of photoresist on the target substrate (1) through the target substrate after the above processing (1) drying.
2, the method for making reverse ladder structure by using architecture-complementary micro-patterning technique as claimed in claim 1 is characterized in that described target substrate (1) has the glass of indium tin oxide for surface deposition.
3, the method for making reverse ladder structure by using architecture-complementary micro-patterning technique as claimed in claim 1 is characterized in that the polyvinyl pyrrolidone mass concentration is 10% in the described aqueous solution.
4, the method for making reverse ladder structure by using architecture-complementary micro-patterning technique as claimed in claim 1 is characterized in that the polyvinyl pyrrolidone mass concentration is 20% in the described aqueous solution.
5, the method for making reverse ladder structure by using architecture-complementary micro-patterning technique as claimed in claim 1 is characterized in that the polyvinyl pyrrolidone mass concentration is 30% in the described aqueous solution.
6, the method for making reverse ladder structure by using architecture-complementary micro-patterning technique as claimed in claim 1 is characterized in that the dry temperature of described soft template and target substrate (1) is 30 degrees centigrade.
7, the method for making reverse ladder structure by using architecture-complementary micro-patterning technique as claimed in claim 1 is characterized in that the dry temperature of described soft template and target substrate (1) is 50 degrees centigrade.
8, the method for making reverse ladder structure by using architecture-complementary micro-patterning technique as claimed in claim 1 is characterized in that the dry temperature of described soft template and target substrate (1) is 80 degrees centigrade.
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| CNB2006100169956A CN100444027C (en) | 2006-07-07 | 2006-07-07 | Method for making reverse ladder structure by using architecture-complementary micro-patterning technique |
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| CNB2006100169956A CN100444027C (en) | 2006-07-07 | 2006-07-07 | Method for making reverse ladder structure by using architecture-complementary micro-patterning technique |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105990129B (en) * | 2015-02-02 | 2019-07-02 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor devices and forming method thereof |
| CN104659286B (en) * | 2015-02-06 | 2017-04-05 | 中国科学院长春应用化学研究所 | The preparation method of patterning organic film |
| CN107093681B (en) * | 2017-05-04 | 2019-05-03 | 京东方科技集团股份有限公司 | A kind of pixel defining layer preparation method, pixel defining layer and display panel |
| CN107240544B (en) * | 2017-05-04 | 2019-10-15 | 中国科学院宁波材料技术与工程研究所 | A kind of preparation method of graphical film, thin film transistor (TFT) and memristor |
| CN107703718A (en) * | 2017-09-27 | 2018-02-16 | 中国科学院长春光学精密机械与物理研究所 | The preparation method of inverted trapezoidal section photoresist mask in a kind of large-area glass substrate |
| CN109698275A (en) * | 2017-10-23 | 2019-04-30 | 北京赛特超润界面科技有限公司 | A kind of preparation method of small organic molecule crystal pattern array |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5710057A (en) * | 1996-07-12 | 1998-01-20 | Kenney; Donald M. | SOI fabrication method |
| CN1397432A (en) * | 2002-08-28 | 2003-02-19 | 中国科学院长春应用化学研究所 | Thermal moulding method for making pattern on high-molecular film |
| US20030134129A1 (en) * | 2001-10-11 | 2003-07-17 | Lammertink Rob G.H. | Devices utilizing self-assembled gel and method of manufacture |
| US20050061773A1 (en) * | 2003-08-21 | 2005-03-24 | Byung-Jin Choi | Capillary imprinting technique |
| US7066971B1 (en) * | 1999-11-23 | 2006-06-27 | Sion Power Corporation | Methods of preparing electrochemical cells |
-
2006
- 2006-07-07 CN CNB2006100169956A patent/CN100444027C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5710057A (en) * | 1996-07-12 | 1998-01-20 | Kenney; Donald M. | SOI fabrication method |
| US7066971B1 (en) * | 1999-11-23 | 2006-06-27 | Sion Power Corporation | Methods of preparing electrochemical cells |
| US20030134129A1 (en) * | 2001-10-11 | 2003-07-17 | Lammertink Rob G.H. | Devices utilizing self-assembled gel and method of manufacture |
| CN1397432A (en) * | 2002-08-28 | 2003-02-19 | 中国科学院长春应用化学研究所 | Thermal moulding method for making pattern on high-molecular film |
| US20050061773A1 (en) * | 2003-08-21 | 2005-03-24 | Byung-Jin Choi | Capillary imprinting technique |
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