CN100438085C - Optical detector and optical camera based on semiconductor optical mamory unit - Google Patents
Optical detector and optical camera based on semiconductor optical mamory unit Download PDFInfo
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- CN100438085C CN100438085C CNB2005100057443A CN200510005744A CN100438085C CN 100438085 C CN100438085 C CN 100438085C CN B2005100057443 A CNB2005100057443 A CN B2005100057443A CN 200510005744 A CN200510005744 A CN 200510005744A CN 100438085 C CN100438085 C CN 100438085C
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- quantum well
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Abstract
The present invention relates to the technical field of semiconductor optical storage, especially an optical detector and an optical camera unit which are based on a semiconductor optical storage unit. A semiconductor optical storage unit in a heterogeneous structure of a double potential barrier is used to realize an optical detection device and a camera unit device. The present invention is characterized in that a broad quantum well is arranged in the middle of the double potential barrier, both ends of the broad quantum well are embedded into two narrow quantum well or two quantum dot layers or a quantum well layer and a quantum dot layer, the external side of the double potential barrier is respectively provided with an undoped isolating layer with appropriate thickness, and the entire structure is placed at an undoped i area in a nin structure to form a complete device structure.
Description
Technical field
The present invention relates to optical semiconductor memory technology field, the photo-detector and the light image unit of particularly a kind of based semiconductor optical memory unit.
Background technology
In recent years, the development of silica-based CCD device is very ripe, be widely used in nearly all technical field relevant, for example bringing into play irreplaceable important function at silica-based CCD devices in aspect such as digital vedio recording, spectrum analysis, astronomy and remote sensings with light signal and IMAQ.But because the restriction of energy gap, silicon-based devices can only arrive 1.1 microns to the response wave length of light is the longest.And exactly be in greater than the near infrared band more than 1 micron among the atmospheric window of astronomical observation and remote sensing, have important use and be worth.The present invention proposes a kind of silica-based CCD device operation principle of being different from, detection, storage and the integration accumulation function of signal realized in the optical memory unit that utilization is made of semiconductor double potential barrier heterostructure, can finish novel optical storage detection, the image unit device of the detection identical with CCD, camera function.And by selecting different compound semiconductor materials systems, can extend to 1.6 microns near infrared band, remedy CCD in the deficiency of surveying on the wavelength with surveying wavelength.
Summary of the invention
The photo-detector and the light image unit that the purpose of this invention is to provide a kind of based semiconductor optical memory unit.A kind of function of utilizing in the optical semiconductor memory cell storage optical excitation electric charge, realize having new principle, survey wavelength and can reach 1.6 microns novel detection, image unit device.
The present invention utilizes the optical semiconductor memory cell, and particularly detection and novel optical storage detection, image unit device integrating function, that be different from Si-CCD to light signal are realized having in the optical memory unit of compound semiconductor double potential barrier heterostructure.
Technical scheme
The photo-detector and the light image unit of a kind of based semiconductor optical memory unit utilize semiconductor double potential barrier heterostructure optical memory unit to realize optical detection and image unit device.
In the middle of the photo-detector of based semiconductor optical memory unit and the light image unit, double potential barrier is wide quantum well; Wide quantum well two ends or embed two narrow quantum well, perhaps two quantum dot layers, perhaps a quantum well layer and a quantum dot layer; In the double potential barrier outside suitable, a plain separator of thickness is arranged respectively, above-mentioned total is placed on the i district that undopes of nin structure, the completed device structure of formation.
The optical signals of its storage is along the photoelectric current parallel read-out of structure growth direction.
For the InP base material system, wherein the In component of narrow quantum well can be got the arbitrary value greater than the In component 0.53 of wide quantum well in principle, and narrow quantum well width can be taken at the arbitrary value within the critical thickness.
Between narrow quantum well, quantum dot and adjacent separately potential barrier, can grow or do not grow separator.
Material therefor is compound semiconductor and mixed crystal heterojunction structure material thereof, its concrete structure and InP base heterojunction structure material similar (but being not limited to the InP yl).
Description of drawings
Fig. 1 is the band edge structure and the level of energy schematic diagram of optical detection and image unit.
Fig. 2 is the photoresponse and the storage principle figure of optical detection and image unit.
Fig. 3 is the read-out principle figure of optical detection and image unit.
Fig. 4 is the hierarchical chart of light shooting of InP base and probe unit.
Embodiment
One, realize the hierarchical structure of optical storage detection of the present invention, image unit
Fig. 1 is the band edge band structure (conduction band limit Ec and valence-band edge Ev) and the level of energy schematic diagram of optical storage detection, image unit.E among the figure
E1 aAnd E
H1 a, E
E1 bAnd E
H1 bBe respectively the middle electronics of narrow quantum well (or quantum dot) of quantum well two ends embedding and the quantum limit energy level in hole.The shadow region of both sides is a heavily doped region.
As shown in Figure 1, the basic structure that realizes optical storage detection of the present invention, image unit is semiconductor double potential barrier heterostructure.In the middle of double potential barrier (1) and (2) is wide quantum well layer (3), is the light absorbing zone of optical storage image unit; Embed the littler narrow quantum well layer of energy gap, quantum dot layer or both composite constructions (4) (5) respectively at the two ends of quantum well; Have respectively in the double potential barrier outside thickness suitable, plain separator (6) (7).Above-mentioned total is placed on the i district that undopes of nin structure, forms completed device.
Two, optical semiconductor storage detection involved in the present invention, the operation principle of image unit (being detection, storage and the readout of light signal):
1, the detection of light signal, storage principle
Among Fig. 2, the hv incident photon energy, " ● " represents light induced electron, and " zero " represents photohole.
Shown in Fig. 2 (a), when energy hv is mapped on optical storage, the image unit greater than the incident illumination of wide quantum well energy gap, wide quantum well absorbs photon and produces electron hole pair, these light induced electrons and hole be drift round about under the effect of external electric field F, be trapped in the narrow quantum well or the quantum dot layer at wide quantum well two ends respectively, thereby spatially separate.The electronics of these apart and hole be because their wave function crossover is almost nil, thereby have quite long recombination lifetime.Shown in Fig. 2 (b), turn off excitation source, as long as keep applying bias constant, electronics and hole can be stored in narrow quantum well and quantum dot layer respectively in considerable time.Like this, not only finished the transformation of light signal to the spatial polarizations electric charge, and, with photogenerated charge among the CCD can be the same in the mos capacitance upper integral, photogenerated charge has the integration accumulation function equally in optical storage detection, image unit.
2, the light signal read-out principle
Optical storage detection of the present invention, image unit adopt the mode that detects photoelectric current to come read output signal.The principle that optical storage detection, image unit are read by photoelectric current is as shown in Figure 3: light induced electron-hole will shield quantum well electric field partly to the interfacial polarization that forms at electric field action in the quantum well, and the quantum well region voltage drop is reduced.Add outside total voltage in the unit when constant, the voltage drop on the remainder except that quantum well must raise, and this makes and raise from the incident electron energy of dual potential barrier structure n+ emitter that its required effective barrier height that passes through is by V
b-E is reduced to V
b-E '.Thereby the electric current (photoelectric current) that flows through optical storage, image unit under the illumination is by I
dIncrease to I
d+ Δ Ip.
Among Fig. 3, solid line and dotted line be corresponding respectively not to be had and the conduction band limit shape when charge storage is arranged.I wherein
dBe dark current, Δ I
pBe current increment, V
bBe the AlAs barrier height, E and E ' are respectively not to be had and incident electron is with respect to the energy of incident end triangle trap bottom when stored charge is arranged, and hv is the incident photon energy of energy greater than wide quantum well energy gap Eg.
Light induced electron-hole is to make the structure electric current produce Δ I to the direct result of storing in wide quantum well
pIncrement, light signal is strong more, amount of charge stored is big more, current increment is also big more.In other words, the electric current that flows through optical storage, image unit changes will directly reflect the charge stored amount, thereby the light signal of storage can be by the photoelectric current parallel read-out along the structure growth direction.The photoelectric current of reading is proportional to the irradiation light intensity, and its magnitude is also big than the electric current that transverse shift produces, and has reduced the requirement to reading circuit.Multiunit parallel read-out also will increase substantially the operating rate of system.
Three, the used material system of optical semiconductor storage detection, image unit involved in the present invention.
The heterojunction material of entire compound semiconductor and mixed crystal thereof all can adopt the present invention.Here select InP based compound dissimilar materials system to illustrate, but be not limited to as shown in Figure 4 material system and hierarchical structure as case.As shown in Figure 4, the optical storage image unit is the In that is grown in lattice match on the InP substrate
0.53Ga
0.47As and In
0.52Al
0.48As, its basic band edge structure is the double potential barrier single quantum as shown in Figure 1, the quantum well both sides are embedded with narrow quantum well and quantum dot layer respectively.Barrier layer is In
0.52Al
0.48As, the heavily doped layer at quantum well, separator and two ends are In
0.53Ga
0.47As.Narrow quantum well is the bigger InGaAs of In component, and its In component can be got the arbitrary value greater than 0.53 in principle, and quantum dot layer is InAs.Adopt as shown in Figure 4 material system and hierarchical structure the optical wavelength that optical storage unit is surveyed can be extended to 1.6 microns near infrared band.
Claims (5)
1. the photo-detector of a based semiconductor optical memory unit and light image unit is characterized in that,
Utilize semiconductor double potential barrier heterostructure optical memory unit to realize optical detection and image unit device, wherein
In the middle of the double potential barrier is wide quantum well; Wide quantum well two ends or embed two narrow quantum well perhaps embed two quantum dot layers, perhaps embed a quantum well layer and a quantum dot layer; In the double potential barrier outside suitable, a plain separator of thickness is arranged respectively, above-mentioned total is placed on the i district that undopes of nin structure, the completed device structure of formation.
2. the photo-detector of the described based semiconductor optical memory of claim 1 unit and light image unit is characterized in that, the optical signals of its storage is along the photoelectric current parallel read-out of structure growth direction.
3. the photo-detector of the described based semiconductor optical memory of claim 1 unit and light image unit, it is characterized in that, for the InP base material system, wherein the In component of narrow quantum well is got the arbitrary value greater than the In component 0.53 of wide quantum well, and narrow quantum well width can be taken at the arbitrary value within the critical thickness.
4. the photo-detector and the light image unit of claim 1 or 3 described based semiconductor optical memory unit is characterized in that, the growth or the separator of not growing between narrow quantum well, quantum dot and adjacent separately potential barrier.
5. according to the photo-detector and the light image unit of claim 1 or 3 described based semiconductor optical memory unit, it is characterized in that, material therefor is compound semiconductor and mixed crystal heterojunction structure material thereof, and its concrete structure and InP base heterojunction structure material are similar.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100057443A CN100438085C (en) | 2005-01-25 | 2005-01-25 | Optical detector and optical camera based on semiconductor optical mamory unit |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100057443A CN100438085C (en) | 2005-01-25 | 2005-01-25 | Optical detector and optical camera based on semiconductor optical mamory unit |
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| Publication Number | Publication Date |
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| CN1812139A CN1812139A (en) | 2006-08-02 |
| CN100438085C true CN100438085C (en) | 2008-11-26 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4833512A (en) * | 1986-04-11 | 1989-05-23 | Itt Gallium Arsenide Technology Center, A Division Of Itt Corporation | Heterojunction photo-detector with transparent gate |
| US6787808B1 (en) * | 1997-07-16 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Optical sensor |
| WO2004095830A2 (en) * | 2003-04-21 | 2004-11-04 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Voltage tunable integrated infrared imager |
-
2005
- 2005-01-25 CN CNB2005100057443A patent/CN100438085C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4833512A (en) * | 1986-04-11 | 1989-05-23 | Itt Gallium Arsenide Technology Center, A Division Of Itt Corporation | Heterojunction photo-detector with transparent gate |
| US6787808B1 (en) * | 1997-07-16 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Optical sensor |
| WO2004095830A2 (en) * | 2003-04-21 | 2004-11-04 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Voltage tunable integrated infrared imager |
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| CN1812139A (en) | 2006-08-02 |
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