CN100436643C - Plating apparatus - Google Patents
Plating apparatus Download PDFInfo
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- CN100436643C CN100436643C CNB200480004248XA CN200480004248A CN100436643C CN 100436643 C CN100436643 C CN 100436643C CN B200480004248X A CNB200480004248X A CN B200480004248XA CN 200480004248 A CN200480004248 A CN 200480004248A CN 100436643 C CN100436643 C CN 100436643C
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
Abstract
The present invention is concerned with a plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus (170) has a plating tank (186) for holding a plating solution (188), a holder (160) for holding a workpiece (W) and bringing a surface to be plated of the workpiece into contact with the plating solution (188) in the plating tank (186), and a ring-shaped nozzle pipe (220) disposed in the plating tank (186) and having a plurality of plating solution injection nozzles (222) for injecting the plating solution (188) to the surface to be plated of the workpiece held by the holder (160) to supply the plating solution (188) into the plating tank (186).
Description
Technical field
The present invention relates to be used for the plater on the surface (treating the surface of plating) of plating substrate etc.; relate in particular to such plater; this plater is used for forming metallic membrane and interconnection according to coating technology on the substrate of LSI circuit etc.; the thin interconnection groove (groove) that in the surface of semiconductor wafer etc., limits; through hole; perhaps form plated film in the protective layer opening and on the surface of semiconductor wafer, form protuberance (projection electrode) to be electrically connected to the electrode of encapsulation etc.
Background technology
In recent years, using a kind of method, this method forms interconnection or protuberance according to coating technology by form metallic membrane on silicon wafer or other substrate in semiconductor circuit.
For example in TAB (coil type engages automatically) or FC (flip chip method), widely used method is to locate to form the multi-layered sheet of the outstanding connection electrode (protuberance) of gold, copper, scolding tin, Pb-free solder or nickel or these metals and be electrically connected the electrode or the TAB electrode of described interconnection and encapsulation by described protuberance at the predetermined portion with the semiconductor chip surface that is formed at interconnection wherein (electrode).The method that forms protuberance comprises the whole bag of tricks, for example electrochemical plating, vapor deposition method, print process and plant ball salient point method (ballbumping).Along with the increase of I/O port number in the recent semi-conductor chip with towards the trend of fine pitches development more, to electroplate and used more continually, reason is that it can deal with more tiny processing and have more stable performance.
Especially, be that by the advantage of electroplating the metallic membrane that produces they have high purity, can increase at high speed, and their thickness controlled easily.On the other hand, electroless advantage is to form the quantity of interconnection or the required step of protuberance can be less, and reason do not need to be to be used on the workpiece for the treatment of plating such such as substrate etc. the Seed Layer by electric current.Have consistent thickness owing to be strict with the film that on semiconducter substrate, forms, therefore in above-mentioned plating process, taked a lot of trials to satisfy such requirement.
Figure 27 has shown an example of traditional electroless plating device, and this device utilizes so-called upside-down mounting (face-down) method.This electroless plating device has the coating bath 12 of the upward opening that is used for keeping therein plating bath (electroless plating liquid) 10, but substrate holder 14 with vertical movement, this bearing is used for removably keeping the substrate W as workpiece, and this substrate will be under such state be made the front surface (surface to be plated) (upside-down mounting) down of substrate W by plating.Overflow groove 16 and be located at around the top of coating bath 12, plating bath delivery pipe 18 is connected to and overflows groove 16.In addition, plating bath supply nozzle 22 is located at the bottom of coating bath 12 and is connected to plating bath supply pipe 20.
In operation, the substrate W that is kept by substrate holder 14 levels is positioned at a position, for example near the opening part of the upper end of coating bath 12.Under this state, plating bath 10 is fed to the bath trough 12 and the top that allows to overflow coating bath 12 from plating bath supply nozzle 22, plating bath 10 is along the surface flow of the substrate W that is kept by substrate holder 14 thus, and turns back to the circulation groove (not shown) by plating bath delivery pipe 18.Therefore, contact with the pretreating surface of substrate W, thereby metal is deposited on and forms metallic membrane on the surface of substrate W by making plating bath.
According to this plater, by regulating from the recharge rate of the plating bath 10 of plating bath supply nozzle 22 supplies and rotation substrate holder 14 etc., the consistence that is formed at the thickness of the lip-deep metallic membrane of substrate W can be carried out adjusting to a certain degree.
Figure 28 has shown an example of traditional electroplanting device, and this device utilizes so-called pickling process.This electroplanting device have be used for keeping plating bath (electroplate liquid) therein but coating bath 12a and the substrate holder 14a of vertical movement, this bearing removably keep substrate W to make front surface (surface to be plated) be exposed and peripheral part of substrate W by waterproof sealing.Anode 24 is kept by anode bearing 26 and vertically is arranged among the coating bath 12a.In addition, when the substrate W that is kept by substrate holder 14a is arranged in position in the face of anode 24, has centre hole 28a, be arranged among the coating bath 12a, thereby be positioned between anode 24 and the substrate W by the adjustment plate 28 of dielectric materials manufacturing.
In operation, anode 24, substrate W and adjustment plate 28 are immersed in the plating bath of coating bath 12a.Simultaneously, anode 24 is connected to the anode of plating power supply 32 by conductor 30a, and substrate W is connected to the negative electrode of plating power supply 32 by conductor 30b.Therefore, because the potential difference between substrate W and the anode 24, the metal ion in the plating bath receives electronics from the surface of substrate W, thereby metal is deposited on the surface of substrate W, thereby forms metallic membrane.
According to this plater, by the adjustment plate 28 with centre hole 28a being arranged in anode 24 and facing between the substrate W that arranges at anode 24 places, with adjust the Potential Distributing that plate 28 is regulated on the coating bath 12a with this, the thickness distribution that is formed at the lip-deep metallic membrane of substrate W can be carried out adjusting to a certain degree.
Figure 29 has shown another example of traditional electroplanting device, and this device utilizes so-called pickling process.The difference of the electroplanting device shown in this electroplanting device and Figure 28 has been to provide the annular false negative electrode (dummy electrode) 34 that replaces adjusting plate, substrate W remains on a kind of state by substrate holder 14a, make false negative electrode 34 be arranged in around the substrate W and false negative electrode 34 is connected to the negative electrode of plating power supply 32 by conductor 30c during electroplating.
According to this plater, the consistence that is formed at the thickness of the lip-deep plated film of substrate W can be enhanced by the electromotive force of regulating false negative electrode 34.
Figure 30 has shown another example of traditional electroplanting device, and this device utilizes so-called pickling process.The difference of the electroplanting device shown in this electroplanting device and Figure 28 is not adjust plate, agitator arm (stirring mechanism) 36 is positioned on the coating bath 12a and is parallel to substrate holder 14a and anode 24 and being arranged between them, a plurality of blades (stirring rod) 38 substantially vertically hangs as the lower surface of agitating vane from agitator arm 36, and arrange like this, make in electroplating process, agitator arm 36 is parallel to reciprocally moving blade 38 of substrate W, stirs the plating bath among the coating bath 12a thus.
According to this plater, agitator arm 36 be parallel to substrate W reciprocally moving blade 38 on the whole surface of substrate W, form the more consistent plated film of thickness thus so that plating bath evenly flows (promptly eliminating plating bath mobile directivity) on the whole surface of substrate W along the surface of substrate W.
For example, in order to go up the metallic membrane (plated film) that forms as interconnection or protuberance in semiconducter substrate (wafer), the surface tissue that is formed at the whole lip-deep metallic membrane of substrate needs consistent with film thickness.Although in recent years such as SOC, the available High Density Packaging Technology of WL-CSP etc. needs higher accurate consistence, yet the metallic membrane that traditional plater produces is difficult to satisfy the accurate conforming requirement of this height.
Particularly, each traditional plater has the constitutional features of himself, and this feature has been represented the film thickness distribution characteristics of the plated film that forms thus, need have the conforming plated film of better film thickness by improving this plater generation.In order to produce the plated film of uniform films thickness, effective means is to make the plating bath near the surface to be plated of substrate etc. flow consistent.The operation that this need make plating bath as one man flow and the surface to be plated of plating bath and substrate etc. is contacted.Plater itself also needs to have simple structure and the mechanism that is designed to be easy to safeguard.For example, the plater shown in Figure 29 need be operated to regulate dummy electrode and to remove the metal lining that is deposited on the dummy electrode.Expectation can be controlled plater better and handle plater simply and the complexity problem that do not have operation and handle.In order to shorten the plating time, strong hope increases plating speed.Increase the surface to be plated that plating speed need be fed to the metal ion in the plating bath substrate etc. effectively.
In plating, a kind of trial that increases plating speed is to increase current density.Yet, increase current density simply and may cause burnt deposit, the plating defective, the passivation of anode surface etc. might cause the plating failure.
Summary of the invention
Produced the present invention in view of above-mentioned defective.Therefore, first target of the present invention provides a kind of plater, and this device can increase plating speed and more as one man regulate flowing of plating bath in coating bath, thereby makes the interior consistence of wafer of film thickness of plated film higher with better simply configuration.
Second target of the present invention provides a kind of plater, and this device is can be enough better simply to be configured in and to form the more consistent plated film of film thickness on the surface to be plated of workpiece and do not need complicated operations and setting.
In order to realize above-mentioned target, a kind of plater is provided, it comprises: the coating bath that is used to keep plating bath; Be used for the bearing that keeps workpiece and the surface to be plated that makes workpiece to contact with the plating bath of coating bath, with the toroidal nozzle that is arranged in the coating bath, this jet pipe has a plurality of plating baths and injects nozzles, being used for injecting plating bath towards the surface to be plated of the workpiece that is kept by bearing, thereby plating bath is fed in the coating bath.
According to the present invention, plating bath is injected into from the plating bath injection nozzle that is formed on the toroidal nozzle, and be applied to the surface to be plated of workpiece as strong liquid stream, thus the ion in the plating bath is fed to effectively the surface to be plated of workpiece, prevents that simultaneously the consistence of the whole lip-deep Potential Distributing to be plated of workpiece is disturbed.Therefore increased the quality that plating speed can not reduce plated film simultaneously.In addition, the consistence of the film thickness of plated film can be improved by regulating flow velocity and the direction of injecting the plating bath that nozzle injects from plating bath, so as to make workpiece near surface to be plated plating bath flow more consistent.
From plating bath inject the liquid stream of the plating bath that nozzle injects should be preferably on the approximate centre zone on the surface to be plated of the workpiece that keeps by bearing or its place ahead cross each other.
Approximate centre zone owing to the surface to be plated that confluxing of plating bath vertically is applied to workpiece, therefore its direction changes over along the surface to be plated of workpiece and outwards propagates subsequently, it flows and is stoped after plating bath impinges upon on the surface to be plated of workpiece, to prevent to disturb the discharge stream of plating bath, therefore formed continuous and stable flowing.
This plater can comprise having the anodic electroplanting device, and plating voltage is applied between anode and the workpiece with at the enterprising electroplating of workpiece.
Have the anodic electroplanting device if plater comprises, this plater should comprise further preferably that being used for injecting plating bath towards anode injects nozzle with the plating bath that plating bath is fed to coating bath so.
The speed of anode dissolution increases, thereby can be with such speed dissolving anode, and this speed equates with the increase of electroplating velocity.
This plater can comprise the electroless plating device, and this electroless plating device is used to make electroless plating liquid to contact with the surface to be plated of workpiece, thereby carries out electroless plating on workpiece.
Workpiece can level or is vertically arranged.
Jet pipe can be shaped as along the outline of workpiece and extends.If for example workpiece has circular outline, jet pipe should comprise the circular ring-shaped jet pipe so.If workpiece has the rectangle outline, jet pipe should comprise the rectangular loop jet pipe so.
Jet pipe should preferably can move with respect to the workpiece that is kept by bearing.In this structure, jet pipe can be with respect to the surface to be plated of workpiece forward or backward, left or backward, move up or down, perhaps the combinations of directions along these directions moves, perhaps move in a circle on the plane on the surface to be plated that is parallel to workpiece, perhaps jet pipe can rotate, with the consistence of the film thickness that is used for further increasing plated film.
Jet pipe and/or plating bath inject nozzle should be preferably by the electrically insulating material manufacturing.Jet pipe and/or plating bath injection nozzle by the electrically insulating material manufacturing prevent that effectively therefore the electric field distribution of coating bath is disturbed.
According to the present invention, a kind of plater also is provided, it comprises: the coating bath that is used to keep plating bath; Stirring mechanism with agitating vane, described agitating vane are immersed in the plating bath of coating bath and are arranged in position in the face of the surface to be plated of workpiece, and described agitating vane can be parallel to the to be plated surperficial to-and-fro movement of workpiece to stir plating bath; Wherein said agitating vane has irregular portion on its at least one side.
According to said structure, when having the described agitating vane to-and-fro movement of irregular portion on its at least one side, described agitating vane can be equably and produce many whirlpools widely in plating bath.Therefore the mobile more all even of the plating bath that contacts with the surface to be plated of workpiece is employed effectively, thereby forms the better plated film of film thickness consistence on the surface to be plated of workpiece.
Described irregular portion for example comprises successive trilateral or rectangle sawtooth irregular portion or a plurality of slits that limit with predetermined spacing.
Because described irregular portion comprises successive trilateral or rectangle sawtooth irregular portion or a plurality of slits that limit with predetermined spacing, therefore many whirlpools of generation in plating bath equably and widely when the agitating vane to-and-fro movement.Therefore, the mobile more all even of the plating bath that contacts with the surface to be plated of workpiece is employed effectively, thereby forms the better plated film of film thickness consistence on the surface to be plated of workpiece.
Preferably, have the side of agitating vane of irregular portion thereon to the surface to be plated of workpiece.
Because a side of agitating vane that has irregular portion thereon is to the surface to be plated of workpiece, therefore many whirlpools of generation in plating bath equably and widely when the agitating vane to-and-fro movement.Therefore, the mobile more all even of the plating bath that contacts with the surface to be plated of workpiece is employed effectively, thereby forms the better plated film of film thickness consistence on the surface to be plated of workpiece.
Stirring mechanism should preferably have a plurality of agitating vanes.
If stirring mechanism has a plurality of agitating vanes, when the agitating vane to-and-fro movement, in plating bath, produce more whirlpools equably and widely so at the near surface to be plated of workpiece.Therefore, the mobile more all even of the plating bath that contacts with the surface to be plated of workpiece is employed effectively, thereby forms the better plated film of film thickness consistence on the surface to be plated of workpiece.
According to the present invention, a kind of plater further is provided, it comprises: the coating bath that is used to keep plating bath; Stirring mechanism with agitating vane, described agitating vane are immersed in the plating bath of coating bath to be used to stir plating bath; Wherein said agitating vane comprises can be by a plurality of agitating vanes of each independent driving mechanisms startup.
According to above-mentioned arrangement, because described agitating vane comprises a plurality of agitating vanes that can be started by each independent driving mechanisms, so the stirring of plating bath distributes and can be conditioned, thereby forms the better plated film of film thickness consistence on the surface to be plated of workpiece.
Preferably, the shape of agitating vane is different.
Because the shape of the agitating vane of stirring mechanism is different, so the stirring of plating bath distributes and can be conditioned, thereby forms the better plated film of film thickness consistence on the surface to be plated of workpiece.
Preferably, agitating vane can be along the direction to-and-fro movement on the surface to be plated that is parallel to workpiece.
Because agitating vane can be along the direction to-and-fro movement on the surface to be plated that is parallel to workpiece, so the stirring of plating bath distributes and can be conditioned, thereby forms the better plated film of film thickness consistence on the surface to be plated of workpiece.
According to the present invention, a kind of plater also is provided, it comprises: the coating bath that is used to keep plating bath; Stirring mechanism with agitating vane, described agitating vane are immersed in the plating bath of coating bath and are arranged in position in the face of the surface to be plated of workpiece, and described agitating vane can be parallel to the to be plated surperficial to-and-fro movement of workpiece to stir plating bath; Wherein said agitating vane has an angle with respect to the surface to be plated of workpiece, this variable-angle when the direction of motion of described agitating vane changes.
According to said structure, agitating vane changes with respect to the described angle on the surface to be plated of workpiece when the direction of motion of agitating vane changes, and produces flowing of plating bath thus equably and widely.Therefore, the mobile more all even of the plating bath that contacts with the surface to be plated of workpiece is employed effectively, thereby forms the better plated film of film thickness consistence on the surface to be plated of workpiece.
Stirring mechanism should preferably have a plurality of agitating vanes.
Use a plurality of agitating vanes, can be equably when the agitating vane to-and-fro movement and produce flowing of plating bath widely.Therefore, the mobile more all even of the plating bath that contacts with the surface to be plated of workpiece is employed effectively, thereby forms the better plated film of film thickness consistence on the surface to be plated of workpiece.
According to the present invention, a kind of plater also is provided, it comprises: the coating bath that is used to keep plating bath; Anode, it is immersed in the plating bath of coating bath and is arranged in position in the face of the surface to be plated of workpiece; With the stirring mechanism that is used for stirring plating bath at coating bath; Wherein said stirring mechanism have close workpiece surface arrangement to be plated first agitating vane and near second agitating vane of anode arrangement.
According to said structure, described stirring mechanism have close workpiece surface arrangement to be plated first agitating vane and near second agitating vane of anode arrangement.When first and second agitating vanes move, near the surface to be plated of workpiece and flowing of anode generation plating bath.The mobile more all even of the plating bath that contacts with the surface to be plated of workpiece is employed effectively, thereby forms the better plated film of film thickness consistence on the surface to be plated of workpiece.
Preferably, first agitating vane can be parallel to the to be plated surperficial to-and-fro movement of workpiece, and second agitating vane can be parallel to the anode surface to-and-fro movement in the face of the surface to be plated of workpiece.
When first agitating vane is parallel to the to be plated surperficial to-and-fro movement of workpiece and second agitating vane and is parallel to anode surface to-and-fro movement in the face of the surface to be plated of workpiece, produce flowing of plating bath near the surface to be plated and the anode of workpiece.The mobile more all even of the plating bath that contacts with the surface to be plated of workpiece is employed effectively, thereby forms the better plated film of film thickness consistence on the surface to be plated of workpiece.
When showing the accompanying drawing of the preferred embodiment of the present invention as an example, can obviously find out from the following description the present invention above-mentioned with other target, feature and advantage.
Description of drawings
Fig. 1 is the site-plan of plating equipment, and this equipment has plater according to an embodiment of the invention (electroplanting device);
Fig. 2 is the synoptic diagram that is arranged in the conveying mechanical arm in the plating space of plating equipment shown in Figure 1;
Fig. 3 is provided in a side of the cross-sectional view of the plater (electroplanting device) in the plating equipment shown in Figure 1;
Fig. 4 is the retaining plate of plater shown in Figure 3 and the skeleton view of jet pipe;
Fig. 5 A-5E is the cross-sectional view that sequentially is presented at the process that forms protuberance (projection electrode) on the substrate;
Fig. 6 is the schematic cross section of plater (electroplanting device) according to another embodiment of the invention;
Fig. 7 is the schematic cross section of plater (electroplanting device) according to still another embodiment of the invention;
Fig. 8 is the schematic cross section of plater (electroplanting device) according to still a further embodiment;
Fig. 9 is the example that shows the motion (rotatablely moving) of jet pipe;
Figure 10 is the schematic cross section of plater (electroless plating device) according to still another embodiment of the invention;
Figure 11 is the orthographic plan of the jet pipe of plater shown in Figure 10;
Figure 12 is the right-hand side view of jet pipe shown in Figure 11;
Figure 13 is the improved orthographic plan of jet pipe;
Figure 14 is the schematic cross section of plater (electroplanting device) according to still another embodiment of the invention;
Figure 15 is another improved orthographic plan of jet pipe;
Figure 16 is the perspective schematic view of plater (electroplanting device) according to still another embodiment of the invention;
Figure 17 A-17C is respectively the difform view that shows agitating vane;
Figure 18 is the perspective schematic view of plater (electroplanting device) according to still another embodiment of the invention;
Figure 19 A is the orthographic plan of another stirring mechanism;
Figure 19 B is the frontview of another stirring mechanism;
Figure 20 A is the side-view of another stirring mechanism;
Figure 20 B is the frontview of another stirring mechanism;
Figure 21 A is the side-view of another stirring mechanism;
Figure 21 B is the frontview of another stirring mechanism;
Figure 22 is the skeleton view of another agitating vane;
Figure 23 shows the view that concerns between direction of motion of agitating vane shown in Figure 22 and the angle of agitating vane with respect to the surface to be plated of workpiece;
Figure 24 shows the view that concerns between another direction of motion of agitating vane shown in Figure 22 and the angle of agitating vane with respect to the surface to be plated of workpiece;
Figure 25 is the perspective schematic view of plater (electroplanting device) according to still another embodiment of the invention;
Figure 26 is the perspective schematic view of plater (electroplanting device) according to still a further embodiment;
Figure 27 is the schematic cross section of traditional plater (electroless plating device);
Figure 28 is the schematic cross section of traditional plater (electroplanting device);
Figure 29 is the schematic cross section of another traditional plater (electroplanting device); With
Figure 30 is the schematic cross section of another traditional plater (electroplanting device).
Embodiment
Below will embodiments of the present invention will be described by referring to the drawings.In the example that embodiment enumerated below, be used as workpiece to be plated such as the such substrate of semiconductor wafer.
Fig. 1 has shown the site-plan of plating equipment, and this equipment has plater according to an embodiment of the invention.This plating equipment is designed to automatically perform all plating processes continuously, comprises pre-treatment, the plating of substrate, the aftertreatment of plating.Inside with device frame 110 of additional protective shield thereon is divided into plating space 116 and clean room 114 by dividing plate 112, shown in plating space 116 be used to carry out the plating process of substrate and the processing of adhering to the substrate of plating bath, described clean room 114 is used to carry out other process, does not promptly directly comprise the process of plating bath.Two substrate holder 160 (see figure 2)s are arranged abreast, as the substrate transfer part on the partitioned portion that separates by dividing plate 112, provide substrate attaching/detaching platform 162 substrate be connected to each substrate holder 160 and dismantle substrate from substrate holder, described dividing plate 112 separates plating space 116 with clean room 114.The load/unload port one 20 that the cassette of substrates of accommodating substrates is mounted thereon is connected to clean room 114.In addition, device frame 110 has the switchboard of establishing thereon 121.
In clean room 114, arranged directed face or breach and the pre-determined direction aligned calibrator 122 that is used to make substrate at four turnings, be used to clean and plated substrate and high speed rotating substrate to dry two cleaning/drying installations 124 of substrate, with the pretreatment unit 126 that is used to carry out substrate pre-treatment (for example in embodiments of the present invention for cleaning pre-treatment), thereby this cleaning pre-treatment comprises the front surface (surface to be plated) towards substrate sprays pure water with pure water clean substrate surface, simultaneously, thus strengthen the wetting ability of substrate surface with the moistening substrate surface of pure water.In addition, first transmission manipulator 128 is disposed generally on these treatment unit, it is the center of calibrator 122, cleaning/drying installation 124 and pretreatment unit 126, thus at treatment unit 122,124, with 126, substrate attaching/detaching platform 162, and be installed between the cassette of substrates on the load/unload port one 20 transmission and send substrate.
Be arranged in the calibrator 122 in the clean room 114, cleaning/drying installation 124 and pretreatment unit 126 are designed to keep and handle substrate, the front face of substrate under this horizontality under horizontality.Transmission manipulator 128 is designed to transmit under horizontality and send substrate, the front face of substrate under this horizontality.
In plating space 116, side from dividing plate 112, arranged in order and be used to store or the store holder 164 of temporarily stored substrate holder 160, activation treatment equipment 166, its for example use such as sulfuric acid or the such chemical liquid of hydrochloric acid come etching be formed on the Seed Layer of substrate surface, have the oxide film of big resistance to remove this oxide film, clean the first washing unit 168a of substrate surface with pure water, be used to carry out the plater 170 of plating, the second washing unit 168b and being used to makes the blowing device 172 of plating substrate dehydration.Thereby two second transmission manipulator 174a and 174b are arranged in these device next doors and can move along track 176, and a 174a in second transmission manipulator transmits substrate holder 160 between substrate attaching/detaching platform 162 and store holder 164.Another 174b in second transmission manipulator transmits substrate holder 160 between store holder 164, activation treatment equipment 166, the first washing unit 168a, plater 170, the second washing unit 168b and blowing device 172.
As shown in Figure 2, each among the second transmission manipulator 174a and the 174b all has the main body 178 of extending in vertical direction and can and center on the arm 180 that its axis rotates along main body 178 vertical movements.Arm 180 has two substrate holder retaining parts 182 that be arranged in parallel, to be used for removably keeping substrate holder 160.Substrate holder 160 is designed to substrate W is remained on a kind of state, makes the front surface of substrate be exposed and peripheral part of substrate is sealed, and substrate W can be attached on the substrate holder 160 and with substrate W and unload from substrate holder 160.
Similarly, washing unit 168a and 168b have two rinse bath 184a and two the rinse bath 184b that keep pure water respectively therein, and plater 170 has a plurality of coating baths 186 that keep plating bath therein.Washing unit 168a, 168b and plater 170 are designed such that substrate holder 160 and substrate W are immersed in rinse bath 184a together, in the pure water of 184b or in the plating bath of coating bath 186, thereby clean or as above-mentioned mode carry out plating.The arm 180 of the second transmission manipulator 174b that keeps having the substrate holder 160 of substrate W is lowered in plumbness, and air or rare gas element spray to blow away attached to the liquid on substrate holder 160 and the substrate W and to make substrate W dehydration towards the substrate W that is installed on the substrate holder 160.Therefore, blowing device 172 processing that is designed to dry.
As shown in Figure 3, each coating bath 186 in the plater 170 is designed to keep therein plating bath 188.Therefore, substrate W is maintained at a kind of state, makes front surface (surface to be plated) be exposed peripheral part of substrate W simultaneously by substrate holder 160 waterproof sealings.
Overflow a side that groove 202 is located at coating bath 186 plating bath 188 with the upper end that is used to admit the excessive dam 200 that overflows coating bath 186.Plating bath delivery pipe 204 is connected to and overflows groove 202.The plating bath circulation tube 206 that connects between plating bath delivery pipe 204 and plating bath supply pipe 218 described below has recycle pump 208, flow rate adjustment device 210 and strainer 212 therein.The plating bath 188 that operation by recycle pump 208 is fed in the coating bath 186 is filled with coating bath 186, overflows dam 200 then, flow into and overflows in the groove 202, and return recycle pump 208.Therefore, plating bath 188 is recycled, and plating bath is regulated by flow rate adjustment device 210 along plating bath circulation tube 208 mobile flow velocitys.
The anode 214 of the plate-like form of similar substrate W is kept by anode bearing 216 and vertically is arranged in the coating bath 186.When coating bath 186 was full of plating bath 188, anode 214 was immersed in the plating bath 188 and the substrate W in the face of being kept by substrate holder 160, and this substrate holder is placed on the predetermined position in the coating bath 186.
In coating bath 186, also arranged the toroidal nozzle 220 that is positioned between anode 214 and the substrate holder 160, described substrate holder 160 is placed on the predetermined position in the coating bath 186.Jet pipe 220 is connected to plating bath supply pipe 218.As shown in Figure 4, jet pipe 220 is configured as annulus along the outline of substrate W, and has a plurality of plating baths injection nozzles 222, and described injection nozzle 222 is positioned at along the predetermined position separately at the circumferential direction interval of jet pipe 220 with predetermined spacing.The plating bath 188 that is recycled of operation by recycle pump 208 injects nozzle 222 from plating bath and injects and be fed to coating bath 186 as mentioned above.
In this embodiment, jet pipe 220 is fixed to rectangle retaining plate 224 by fastening piece 226, and this rectangle retaining plate has therein the opening 224a that limits and the inside of coating bath 186 is divided into is used for holding therein the compartment of anode 214 and is used for the compartment of accommodating substrates W therein.Opening 224a has a size, and this size is substantially equal to or is slightly smaller than the internal diameter of jet pipe 220.Jet pipe 220 is positioned at substrate one side of retaining plate 224 and is arranged to center on the periphery of opening 224a.Plating bath injection nozzle 222 is oriented to the feasible liquid stream that injects the plating bath 188 of nozzle 222 injections from plating bath and crosses each other at joint P, this joint P is positioned at the place ahead in the approximate centre zone of the substrate W that is kept by substrate holder 160, and this substrate holder is arranged in the predetermined position in the coating bath 186.
The plating bath that is formed on the toroidal nozzle 220 injects nozzle 222 injection plating baths 188, thereby is fed in the coating bath 186 plating bath 188 and circulating bath 188.At this moment, the plating bath 188 that injects nozzle 222 injections from plating bath is applied to the surface (surface to be plated) of substrate W as strong liquid stream, thus the ion in the plating bath 188 is fed to effectively the surface of substrate W, prevents that simultaneously the consistence of the whole lip-deep Potential Distributing of substrate W is disturbed.Therefore increased the quality that plating speed can not reduce plated film simultaneously.In addition, the consistence that is formed at the film thickness of the lip-deep plated film of substrate W can increase by regulating flow velocity and the direction of injecting the plating bath 188 that nozzle 222 injects from plating bath, so as to make liner W near surface plating bath 188 flow more consistent.
Especially, because inject the liquid stream of the plating bath 188 of nozzle 222 injections crosses each other at joint P from plating bath, this joint P is positioned at the place ahead in approximate centre zone on the surface of substrate W, so the approximate centre zone on the surface that vertically is applied to substrate W of flowing of plating bath 188.Therefore, the flow direction of plating bath 188 changes over along the surface of substrate W and outwards propagates.Therefore it flows and is stoped after plating bath 188 impinges upon on the surface of substrate W, preventing to disturb the discharge stream of plating bath 188, so has formed continuous and stable mobile.
The inside of coating bath 186 is had the retaining plate 224 of opening 224a and is separated.Plating bath 188 passes opening 224a and flow into thus and overflows in the groove 202.Therefore, the Potential Distributing on the whole area of substrate W is more even.
At this moment, inject the plating bath 188 that nozzle 222 injects from plating bath and be applied to the surface (surface to be plated) of substrate W, thereby increased the quality that plating speed can not reduce plated film simultaneously as strong liquid stream.In addition, the consistence of film thickness that is formed at the lip-deep plated film of substrate W can increase by adjusting, thus make substrate W near surface plating bath 188 flow more consistent.
After finishing the plating process, plating power supply 230 and substrate W and anode 214 disconnections, and on draw substrate holder 160 and substrate W.Handle substrate W then, for example water cleaning and cleaning, the substrate W of plating is passed to next process afterwards.
Thus the series of projections plating process in Gou Zao the plating equipment will be below with reference to the accompanying drawings 5A-5E be described.At first, shown in Fig. 5 A, Seed Layer 500 is deposited on the surface of substrate W as supplying layer, and the protective layer with the height H that for example is approximately 20-120 μ m is applied on the whole surface of Seed Layer 500.Afterwards, has the diameter D that for example is approximately 20-200 μ m
1 Opening 502a be formed at the predetermined position of protective layer 502.Zhi Bei substrate W is contained in the cassette of substrates with a kind of state thus, make substrate front surface (surface to be plated) down.Cassette of substrates is installed on the load/unload port one 20.
Among the substrate W one is taken out and is placed on the calibrator 122 so that the directed face of substrate or breach are aimed at pre-determined direction from being installed in cassette of substrates on the load/unload port one 20 by first transmission manipulator 128.Aligned substrate W is transferred to pretreatment unit 126 by first transmission manipulator 128 thus.In pretreatment unit 126, use pure water to be performed as the pre-treatment (cleaning pre-treatment) of pretreatment fluid.On the other hand, two substrate holders 160 that are stored in the store holder 164 with plumbness are taken out by the second transmission manipulator 174a, half-twist, thus substrate holder 160 becomes horizontality, is placed on abreast then on the substrate attaching/detaching platform 162.
Then, the substrate W of the aforementioned pre-treatment of process (cleaning pre-treatment) is loaded onto in the substrate holder 160 that is placed on the substrate attaching/detaching platform 162 with a kind of state, makes that peripheral part of substrate W is sealed.Two of load substrates substrate holders 160 are kept, are raise by the second transmission manipulator 174a simultaneously, are transferred to store holder 164 then.Substrate holder 160 half-twists become plumbness and are lowered, thereby two substrate holders 160 keep (temporarily stored) in store holder 164 with hang.Repeat to above-mentioned working order, thereby substrate sequentially is loaded in the substrate holder 160, described substrate holder is stored in the store holder 164, and sequentially keeps (temporarily stored) predetermined position in store holder 164 with hang.
On the other hand, be mounted with substrate and two substrate holders 160 being stored temporarily in the store holder 164 are kept simultaneously, raise by the second transmission manipulator 174b, be transferred to activation treatment equipment 166 then.Each substrate all be immersed in remain in the activation treatment groove 183 such as in the such chemical liquid of sulfuric acid or hydrochloric acid, etching is formed at that Seed Layer is lip-deep thus, oxide film with big resistance to be to expose clean metallic surface.The substrate holder 160 of load substrates cleans the surface of substrate to be transferred to the first washing unit 168a with above-mentioned same mode to use the pure water that remains among the rinse bath 184a.
The substrate holder 160 that loads the substrate that cleaned is to be transferred to plater 170 with above-mentioned same mode.Each liner W is supported by coating bath 186 with hang under a kind of state, makes substrate W be immersed in the plating bath 188 that is kept by coating bath 186, thereby carry out plating on the surface of substrate W.After the scheduled time exhausted, the substrate holder 160 of load substrates was kept by the second transmission manipulator 174b once more and draws from coating bath 186.Therefore finish the plating process.
Afterwards, substrate holder 160 is transferred to the second washing unit 168b in the same manner as described above.Substrate holder 160 is immersed in the pure water of rinse bath 184b with the surface with the pure water clean substrate.Then, the substrate holder 160 of load substrates is transferred to blowing device 172 in the same manner as described above.In blowing device 172, rare gas element or air spray to blow away plating bath and the drop that is attached to substrate and substrate holder 160 towards substrate.Afterwards, the substrate holder 160 of load substrates turns back to the predetermined position in the store holder 164 in the same manner as described above and remains on suspension status.
The second transmission manipulator 174b sequentially repeats above-mentioned operation, thereby the substrate holder 160 that loads the plating substrate sequentially turns back to the predetermined position in the store holder 164 and remains on suspension status.
On the other hand, loading, two substrate holders 160 of plating substrate are kept by the second transmission manipulator 174a simultaneously in the same manner as described above and are placed on the substrate attaching/detaching platform 162.
Be arranged in that first transmission manipulator 128 in the clean room 114 takes out the substrate holder 160 that is placed on the substrate attaching/detaching platform 162 and with substrate transport any one to cleaning/drying installation 124.In cleaning/drying installation 124, substrate remains on horizontality, makes the front face of substrate, this substrate with cleaning such as pure water and under high speed rotation to dry substrate.Afterwards, substrate returns the cassette of substrates that is installed on the load/unload port one 20 by first transmission manipulator 128 then.Therefore a series of plating processes have been finished.As a result, shown in Fig. 5 B, obtain having the substrate W of plated film 504, grow among the opening 502a of described plated film in being formed at protective layer 502.
As mentioned above, the substrate W of drying for example is immersed in that temperature is in the 50-60 ℃ of acetone solvent, thereby removes protective layer 502 from substrate W, shown in Fig. 5 C.Further, shown in Fig. 5 D, the unnecessary Seed Layer 502 that exposes after the plating is removed.Then, the plated film 504 that is formed on the substrate W refluxes to form protuberance 506, and this protuberance is owing to surface tension has circle, shown in Fig. 5 E.Then substrate W for example under 100 ℃ or above temperature annealing to eliminate the unrelieved stress in the protuberance 506.
According to this embodiment, the conveying of substrate is by the second transmission manipulator 174a that is arranged in the plating space 116 in the plating space 116, and 174b carries out, and the conveying of substrate is carried out by first transmission manipulator 128 that is arranged in the clean room 114 in the clean room 114.Therefore, can improve cleanliness factor around the substrate and the treatment capacity that increases plating equipment in the plating equipment, this plating equipment is carried out all plating processes continuously, comprises the aftertreatment of pre-treatment, plating and the plating of substrate.In addition, can reduce the load on the equipment relevant and obtain the minification of plating equipment with plating equipment.
In the present embodiment, the plater 170 that is used to carry out the plating process has the coating bath 186 of fossette.Therefore, the plater 170 with many coating baths 186 can have small size, makes littler machine utilization append to the plating workshop.In Fig. 1, one in two cleaning/drying installations 124 can be replaced by pretreatment unit.
Fig. 6 has shown plater (electroplanting device) according to another embodiment of the present invention.The difference of plater shown in Figure 6 and Fig. 3 and plater shown in Figure 4 is to adjust plate 232 and is arranged in and keeps substrate W and be arranged in the substrate holder 160 in the predetermined position in the coating bath 186 and have plating bath injecting between the jet pipe 220 of nozzle 222, this adjustment plate 232 has centre hole 232a, and thickness range is at 0.5-10mm, and by the dielectric materials manufacturing, PVC for example, PP, PEEK, PES, HT-PVC, PFFA, PTFE, perhaps other resin material.Other CONSTRUCTED SPECIFICATION of plater shown in Figure 6 and Fig. 3 and plater shown in Figure 4 are identical.
In the present embodiment, the Potential Distributing of regulating in the coating baths 186 of the adjustment plate 232 with centre hole 232a increases at the coating film thickness of substrate W periphery growth preventing.
Fig. 7 has shown the plater (electroplanting device) according to further embodiment of this invention.The difference of plater shown in Figure 7 and plater shown in Figure 6 is that stirring mechanism 236 is arranged between the substrate holder 160 and adjustment plate 232 that keeps substrate W and be arranged in the predetermined position in the coating bath 186, and this stirring mechanism 236 has the agitating vane (blade) 234 of downward suspension.This stirring mechanism 236 is parallel to the substrate W that is kept by substrate holder 160 and moves back and forth agitating vane 234, stirs plating bath 188 thus.
In the present embodiment, agitating vane 234 is parallel to substrate W and is moved back and forth with stirring by stirring mechanism 236 in plating bath 188 and be present in the plating bath of adjusting between plate 232 and the substrate W 188, plating bath 188 is flowed on the whole surface of substrate W more equably along substrate W, thereby on the whole surface of substrate W, form the more consistent plated film of film thickness.
In the present embodiment, agitating vane 234 has irregular portion 234a in the side of its faces substrate W.As described in the following examples, when agitating vane 234 to-and-fro movements, having the agitating vane 234 of irregular portion 234a in the side of its faces substrate W can be equably and produce many whirlpools widely in plating bath 188.Therefore the mobile more all even of the plating bath 188 that contacts with the surface (surface to be plated) of substrate W is employed effectively, thereby forms the better plated film of film thickness consistence on the surface of substrate W, promptly has the plated film of more consistent film thickness.
Fig. 8 has shown plater according to yet another embodiment of the invention (electroplanting device).The difference of plater shown in Figure 8 and plater shown in Figure 7 is that a plurality of plating baths inject nozzles 240 to be used for injecting plating baths 188 towards anode 214 to jet pipe 220 in the face of side of anode 214 also has at it, and the liquid stream that injects the plating bath 188 that nozzle 240 injects from plating bath is applied to anode 214 thus.Because the liquid of the plating bath 188 that injects stream also is applied to anode 214, so the increase of anode 214 dissolved speed, thereby can be with such speed dissolving anode 214, this speed equates with the increase of electroplating velocity.
In the above-described embodiments, jet pipe 220 is fixedly mounted in the coating bath 186 by retaining plate 224.Yet jet pipe can be with respect to the substrate W that is kept by substrate holder 160 forward or backward, left or backward, moves up or down, and perhaps the combinations of directions in these directions moves.Jet pipe can move in a circle being parallel on the plane of substrate surface, and perhaps as shown in Figure 9, jet pipe 220 can rotate.This can further increase the consistence of the film thickness of plated film.This is equally applicable to each following embodiment.
Figure 10-12 has shown the plater according to further embodiment of this invention.According to present embodiment, principle of the present invention is applied on the surface of substrate W (surface to be plated) carries out electroless electroless plating device, and the described surface of described substrate is held down.
This electroless plating device has the coating bath 302 of the upward opening that is used for keeping therein plating bath (electroless plating liquid) 300 and is used for the vertically moving substrate holder 304 that level removably keeps substrate W, the surface of this substrate (surface to be plated) down.Overflow groove 306 be arranged in coating bath 302 tops around, and be connected to plating bath delivery pipe 308.The jet pipe 312 that is connected to plating bath supply pipe 310 flatly is arranged in a position in the coating bath 302, immerses in the plating bath 300 that remains in the coating bath 302 at this position jet pipe 312.Jet pipe 312 has a plurality of plating baths and injects nozzle 314, and described injection nozzle 314 is positioned at along the predetermined position separately at the circumferential direction interval of jet pipe 312 with predetermined spacing.Plating bath delivery pipe 308 and plating bath supply pipe 310 are interconnection with the plating bath circulation tube, as described in top embodiment.
Plating bath inject nozzle 314 be orientated make they upwards and inwardly (towards inside) inject plating bath 300, and cross each other in the place ahead in the lower surface approximate centre zone of substrate W from the liquid stream that plating bath injects the plating bath 300 that nozzle 314 injects.
In the present embodiment, plating bath 300 injects nozzle 314 from plating bath and injects towards the substrate W that is kept by substrate holder 304, and being fed to coating bath 302 neutralizations is recycled to carry out electroless plating, described substrate holder 304 is arranged in the position near the opening of the upper end of coating bath 302, and is rotated if necessary.In the present embodiment, inject plating bath 300 that nozzle 314 injects from plating bath and be applied to the surface (surface to be plated) of substrate W, increase the quality that plating speed can not reduce plated film simultaneously thus as strong liquid stream.In addition, the consistence of film thickness that is formed at the lip-deep plated film of substrate W can increase by adjusting, thus make substrate W near surface plating bath 300 flow more consistent.
As shown in figure 13, the section 316 with plating bath injection nozzle 314 separately can interconnect by ring joint 318, and jet pipe 312 is provided thus.In this structure, jet pipe 312 can be made easily.This is equally applicable to the above embodiments and the following embodiment that will describe.
Figure 14 has shown the plater according to further embodiment of this invention.According to present embodiment, principle of the present invention is applied to the no plating appts of (surface to be plated) enterprising electroplating on the surface of substrate W, and the described surface of described substrate is held down.The difference of the plater shown in plater shown in Figure 14 and Figure 10-12 is that electroplate liquid is used as plating bath 300, and plate anode 320 is placed on the bottom of coating bath 302 below jet pipe 312.Plating bath injects nozzle 314 and injects plating bath 300 towards the surface of substrate W so that plating bath 300 is fed to coating bath 302, and circulating bath 300.Simultaneously, anode 320 is connected to the anode of plating power supply 324 by conductor 322a, and substrate W carries out plating (plating) process thus by the negative electrode that conductor 322b is connected to plating power supply 324.
In the above-described embodiment, be circular as the substrate W of workpiece to be plated, jet pipe 220,312 be circular along the outline extension of substrate W.If rectangular substrate etc. as workpiece to be plated, so, as shown in figure 15, can be used such jet pipe 342, it be a rectangular ring, and plating bath injection nozzle 340 is arranged in its four angles and towards the pre-determined direction orientation.Jet pipe 342 can form more uniform plating bath and flow on the whole surface of this rectangular substrate.
As mentioned above, according to the present invention, the ion in the plating bath can be fed to the surface (surface to be plated) of substrate effectively, prevents that simultaneously the homogeneity of the Potential Distributing on the substrate surface is disturbed, thereby can increase the quality that plating speed can not reduce plated film simultaneously.In addition, the consistence of the film thickness of plated film can be improved by regulating flow velocity and the direction of injecting the plating bath that nozzle injects from plating bath, so as to make near surface to be plated plating bath flow more consistent.
Figure 16 has shown the plater (electroplanting device) according to further embodiment of this invention.As shown in figure 16, plater 610 has the coating bath 611 that keeps plating bath therein, and the substrate W that is kept by substrate holder 612 and the anode that kept by anode bearing 614 615 are parallel to each other and be arranged vertically in this coating bath with facing with each other.Substrate W is connected to the negative electrode of plating power supply 617 by conductor 616, and anode 615 is connected to the anode of plating power supply 617 by conductor 618.
In the present embodiment, when the agitating vane 619 that has zig-zag irregular portion 619a on the side of its faces substrate W is stirred mechanism 620 when reciprocally mobile along the direction that is parallel to substrate W, in plating bath, produce many whirlpools equably and widely.Therefore, the mobile more all even of the plating bath that contacts with the surface (surface to be plated) of substrate W is employed effectively, thereby forms the better plated film of film thickness consistence on the surface of substrate W, promptly has the plated film of more consistent film thickness.
In the above-described embodiments, the zig-zag irregular portion 619a of successive lance tooth is arranged in the side of agitating vane 619 faces substrate W, shown in Figure 17 A.Yet the zig-zag irregular portion is not limited to the form shown in Figure 17 A, and can be the zig-zag irregular portion 619b of successive rectangular teeth, and shown in Figure 17 B, the perhaps irregular portion 619c of a plurality of form of slots that limit with predetermined spacing is shown in Figure 17 C.Because agitating vane 619 has the zig-zag irregular portion 619a of successive lance tooth in the one side, or the zig-zag irregular portion 619b of successive rectangular teeth, or the irregular portion 619c of a plurality of form of slots that limit with predetermined spacing, therefore the plating bath that is caused by the to-and-fro movement of agitating vane 619 flows equably and produce many whirlpools widely in plating bath.Because the mobile more all even of the plating bath that contacts with substrate W is employed effectively, therefore can form the better plated film of film thickness consistence on the surface of substrate W.
Figure 18 has shown the plater (electroplanting device) according to further embodiment of this invention.Those parts of plater shown in Figure 18 of reference number representative same as shown in Figure 17 are identical or corresponding with those parts shown in Figure 17.This principle is applicable to other accompanying drawing.As shown in figure 18, the stirring mechanism 620 of plater 610 has a plurality of (being 2 in Figure 18) agitating vane 619, each agitating vane has zig-zag irregular portion 619a on the side of its faces substrate W.When the agitating vane 619 of stirring mechanism 620 is parallel to substrate W to-and-fro movement, in plating bath, produce many whirlpools equably and widely.Therefore, the mobile more all even of the plating bath that contacts with substrate W is employed effectively, forms the better plated film of film thickness consistence thereby can go up on the surface (surface to be plated) of substrate W.Each agitating vane 619 can have the irregular portion 619a shown in Figure 17 A-17C, 619b, any one among the 619c.
Figure 19 A is the orthographic plan of another stirring mechanism, and Figure 19 B is the frontview of another stirring mechanism.Shown in Figure 19 A and 19B, stirring mechanism 620 has a plurality of (being 2 in Figure 19 A and 19B) agitating vane 619, described agitating vane can be driven by each independent driving mechanisms 623.Each driving mechanism 623 comprises CD-ROM drive motor 623-1, crank 623-2, guiding piece 623-3, transmission shaft 623-4 and bearing 623-5.Agitating vane 619 is installed on the far-end of transmission shaft 623-4.As shown in figure 16, agitating vane 619 generally perpendicularly extends towards the bottom from the top of coating bath 611.
When CD-ROM drive motor 623-1 is activated and when rotating shown in the arrow A, the crank 623-2 that an end is connected to the transmission shaft of CD-ROM drive motor 623-1 makes its other end along the guiding groove 623-3a to-and-fro movement that is limited among the guiding piece 623-3.Be connected to the other end of crank 623-2 and by the transmission shaft 623-4 of bearing 623-5 supporting by to-and-fro movement shown in the arrow B, move back and forth the agitating vane 619 on the far-end that is installed in transmission shaft 623-4 thus.
As mentioned above, stirring mechanism 620 has a plurality of (being 2 in Figure 19 A and 19B) agitating vane 619, described agitating vane can be driven by each independent driving mechanisms 623.When agitating vane 619 can be driven by each independent driving mechanisms 623, the stirring in the plating bath distributed and can be conditioned, thereby goes up the better plated film of formation film thickness consistence on the surface (surface to be plated) of substrate W.
The agitating vane 619 that is installed on the driving mechanism 623 of the stirring mechanism 620 shown in Figure 19 A and the 19B is of similar shape each other.Yet agitating vane can have different shapes.Particularly, Figure 20 A and 20B have shown the stirring mechanism with extend perpendicular agitating vane 624,625, and described agitating vane has length about equally each other and can be driven by each independent driving mechanisms 623.Agitating vane 624,625 has most advanced and sophisticated 624a separately on the one side, 625a, and described tip is aligned with each other aligned with each other with the stirring surface that keeps agitating vane 624,625, thus agitating vane 624,625 can stir plating bath in the different zones of vertical direction.Figure 21 A and 21B have shown the stirring mechanism with longer agitating vane 632 and shorter agitating vane 634, and described agitating vane is arranged in the upper and lower, and are moved back and forth by each independent driving mechanisms 623 respectively.Agitating vane 632,634 has most advanced and sophisticated 632a separately on the one side, 634a, and described tip is aligned with each other aligned with each other with the stirring surface that keeps agitating vane 632,634, thus agitating vane 632,634 can stir plating bath in the different zones of vertical direction.Have difform agitating vane by so optionally using, the stirring in the plating bath distributes and can be conditioned, thereby forms the better plated film of film thickness consistence on the surface of substrate W.
Figure 22 has shown another agitating vane.As shown in figure 22, agitating vane 626 is installed on the turning axle 627, and the angle of this turning axle is movable, thereby changes the angle of agitating vane 626.For example, shown in Figure 23 and 24, a plurality of (being illustrated as 3) such agitating vane 626 is installed on the reciprocating driving mechanism (for example, the driving mechanism shown in Figure 19 A and 19B 623).Agitating vane 626 is parallel to surface (surface to be plated) the Wa to-and-fro movement of substrate W by arrow D shown in Figure 23 or arrow C shown in Figure 24, the angle of turning axle 627 changes when the direction of motion of agitating vane 626 changes, and has therefore changed the angle of agitating vane 626 with respect to substrate W.
As mentioned above, when agitating vane shown in Figure 22 626 changes along with the change of agitating vane 626 direction of motion with respect to the angle of substrate W as the agitating vane of stirring mechanism and agitating vane 626, shown in Figure 23 and 24, cause in plating bath, producing shown in the arrow F as shown in Figure 23 or flowing shown in the arrow E as shown in Figure 24.The flowing equably and produce widely of the plating bath that produces of motion by agitating vane 626 thus, and plating bath is applied to the surface to be plated of substrate W equably and effectively, on the surface of substrate W, form the better plated film of film thickness consistence thus.Especially,, therefore near the surperficial Wa of substrate W, produce flowing of plating bath more equably and more widely, on the surperficial Wa of substrate W, form the better plated film of film thickness consistence thus owing to used a plurality of agitating vanes 626.
Figure 25 has shown the plater (electroplanting device) according to further embodiment of this invention.As shown in figure 25, this plater has two stirring mechanisms of facing 629,630, and these two stirring mechanisms have agitating vane 628 separately and are arranged between the substrate W and anode 615 that is arranged in the coating bath 611 with facing each other.One 629 close substrate W in the stirring mechanism arranges that another in the stirring mechanism 630 arranged near anodes 615.Use more equably and more effectively by the agitating vane 628 (first agitating vane) of stirring mechanism 629 and the agitating vane 628 (second agitating vane) of stirring mechanism 630 with the flowing of plating bath that anode 615 all contacts with substrate W, thereby on the surface of substrate W, form the better plated film of consistence.
In plater shown in Figure 25, the agitating vane 628,628 of stirring mechanism 629,630 does not have irregular portion on the side of its faces substrate W and anode 615.Yet as shown in figure 26, the agitating vane 619 that has the zig-zag irregular portion 619a (shown in Figure 17 A) of successive lance tooth on the side of its faces substrate W and anode 615 can be installed to stirring mechanism 629,630.Selectively, each agitating vane 619 can have the zig-zag irregular portion 619b of successive rectangular teeth, and shown in Figure 17 B, the perhaps irregular portion 619c of a plurality of form of slots that limit with predetermined spacing is shown in Figure 17 C.
In the plater shown in Figure 25 and 26, stirring mechanism 629,630 can by shown in the arrow G shown in Figure 25 together or to-and-fro movement independently of one another.
Although described embodiments of the invention in the above, the present invention is not limited to the foregoing description, but can carry out various changes and modifications in the scope of the know-why described in the scope of claim, specification sheets and accompanying drawing.Not in any structure of in specification sheets and accompanying drawing, directly describing, the scope that structure and material is included in know-why of the present invention, as long as they can and provide advantage of the present invention according to work of the present invention.
Industrial applicibility
The present invention relates to the plater for the surface of plating substrate, relate in particular to such Plater, this plater are for the groove that limits on the surface of semiconductor wafer, and be logical The hole, perhaps form in the protective layer opening plated film and semiconductor wafer form protuberance with Be electrically connected to the electrode of encapsulation.
Claims (10)
1. plater, it comprises:
Be used to keep the coating bath of plating bath;
Be used for the bearing that keeps workpiece and the surface to be plated that makes workpiece to contact with the plating bath of coating bath; With
Be arranged in the toroidal nozzle in the coating bath, this jet pipe has a plurality of plating baths and injects nozzles, being used for injecting plating bath towards the surface to be plated of the workpiece that is kept by bearing, thereby plating bath is fed in the coating bath.
2. plater according to claim 1, wherein the liquid stream that injects the plating bath that nozzle injects from plating bath on the approximate centre zone on the surface to be plated of the workpiece that keeps by bearing or its place ahead cross each other.
3. plater according to claim 1, wherein this plater comprises having the anodic electroplanting device, plating voltage is applied between anode and the workpiece with at the enterprising electroplating of workpiece.
4. plater according to claim 3, it comprises that further being used for injecting plating bath towards anode injects nozzle with the plating bath that plating bath is fed to coating bath.
5. plater according to claim 1, wherein this plater comprises the electroless plating device, this electroless plating device is used to make electroless plating liquid to contact with the surface to be plated of workpiece, thereby carries out electroless plating on workpiece.
6. plater according to claim 1, wherein the workpiece water level land is arranged.
7. plater according to claim 1, wherein workpiece is vertically arranged.
8. plater according to claim 1, wherein jet pipe is configured as along the outline of workpiece and extends.
9. plater according to claim 1, wherein jet pipe can move with respect to the workpiece that is kept by bearing.
10. plater according to claim 1, wherein jet pipe and/or plating bath inject nozzle by the electrically insulating material manufacturing.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP065476/2003 | 2003-03-11 | ||
| JP2003065476 | 2003-03-11 | ||
| JP208315/2003 | 2003-08-21 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101447137A Division CN101812711B (en) | 2003-03-11 | 2004-03-09 | Plating apparatus |
| CN2008101661152A Division CN101369533B (en) | 2003-03-11 | 2004-03-09 | Plating apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1751382A CN1751382A (en) | 2006-03-22 |
| CN100436643C true CN100436643C (en) | 2008-11-26 |
Family
ID=36606046
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200480004248XA Expired - Fee Related CN100436643C (en) | 2003-03-11 | 2004-03-09 | Plating apparatus |
| CN2008101661152A Expired - Fee Related CN101369533B (en) | 2003-03-11 | 2004-03-09 | Plating apparatus |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101661152A Expired - Fee Related CN101369533B (en) | 2003-03-11 | 2004-03-09 | Plating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN100436643C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107488869A (en) * | 2016-06-10 | 2017-12-19 | 株式会社荏原制作所 | The power supply body and plater of anode can be supplied power to |
| CN109306474A (en) * | 2017-07-27 | 2019-02-05 | 塞姆西斯科有限责任公司 | For chemistry and/or the distribution system of electrolytic surface processing |
| CN110735174A (en) * | 2019-03-22 | 2020-01-31 | Pyxis Cf私人有限公司 | Electroplating apparatus and method of operating the same |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6285199B2 (en) * | 2014-02-10 | 2018-02-28 | 株式会社荏原製作所 | Anode holder and plating apparatus |
| JP6790016B2 (en) * | 2018-04-10 | 2020-11-25 | 上村工業株式会社 | Surface treatment equipment, surface treatment method and paddle |
| CN108517542B (en) * | 2018-07-12 | 2020-09-22 | 包头蓝谷科技有限公司 | Repairing tool, repairing device and repairing method for round billet crystallizer |
| CN109023437B (en) * | 2018-07-12 | 2020-05-12 | 包头蓝谷科技有限公司 | Repairing tool, repairing device and repairing method for slab crystallizer |
| CN108823611B (en) * | 2018-07-12 | 2020-09-22 | 内蒙古科技大学 | Repair tool, repair device and repair method for square billet crystallizer |
| US10865496B2 (en) * | 2018-10-30 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plating apparatus and plating method |
| JP7242516B2 (en) * | 2019-12-13 | 2023-03-20 | 株式会社荏原製作所 | substrate holder |
| CN115233279B (en) * | 2022-09-23 | 2022-12-16 | 晟盈半导体设备(江苏)有限公司 | Integrated wafer electroplating equipment and electroplating method |
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| US5683564A (en) * | 1996-10-15 | 1997-11-04 | Reynolds Tech Fabricators Inc. | Plating cell and plating method with fluid wiper |
| EP1167583A2 (en) * | 2000-06-30 | 2002-01-02 | Ebara Corporation | Copper-plating liquid, plating method and plating apparatus |
| EP1174912A1 (en) * | 1999-12-24 | 2002-01-23 | Ebara Corporation | Semiconductor wafer processing apparatus and processing method |
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- 2004-03-09 CN CNB200480004248XA patent/CN100436643C/en not_active Expired - Fee Related
- 2004-03-09 CN CN2008101661152A patent/CN101369533B/en not_active Expired - Fee Related
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|---|---|---|---|---|
| US5421987A (en) * | 1993-08-30 | 1995-06-06 | Tzanavaras; George | Precision high rate electroplating cell and method |
| US5683564A (en) * | 1996-10-15 | 1997-11-04 | Reynolds Tech Fabricators Inc. | Plating cell and plating method with fluid wiper |
| EP1174912A1 (en) * | 1999-12-24 | 2002-01-23 | Ebara Corporation | Semiconductor wafer processing apparatus and processing method |
| EP1167583A2 (en) * | 2000-06-30 | 2002-01-02 | Ebara Corporation | Copper-plating liquid, plating method and plating apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107488869A (en) * | 2016-06-10 | 2017-12-19 | 株式会社荏原制作所 | The power supply body and plater of anode can be supplied power to |
| CN107488869B (en) * | 2016-06-10 | 2021-03-02 | 株式会社荏原制作所 | Power supply body capable of supplying power to anode and plating apparatus |
| CN109306474A (en) * | 2017-07-27 | 2019-02-05 | 塞姆西斯科有限责任公司 | For chemistry and/or the distribution system of electrolytic surface processing |
| CN110735174A (en) * | 2019-03-22 | 2020-01-31 | Pyxis Cf私人有限公司 | Electroplating apparatus and method of operating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101369533A (en) | 2009-02-18 |
| CN1751382A (en) | 2006-03-22 |
| CN101369533B (en) | 2010-06-02 |
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