CN100435324C - 具有增强散热性的半导体封装结构 - Google Patents

具有增强散热性的半导体封装结构 Download PDF

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Publication number
CN100435324C
CN100435324C CNB2004800445298A CN200480044529A CN100435324C CN 100435324 C CN100435324 C CN 100435324C CN B2004800445298 A CNB2004800445298 A CN B2004800445298A CN 200480044529 A CN200480044529 A CN 200480044529A CN 100435324 C CN100435324 C CN 100435324C
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heat sink
syndeton
heat
conduction
encapsulating structure
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CN101073150A (zh
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弗朗西斯·J·卡尔尼
迈克尔·J·瑟登
肯特·L·凯姆
梁龙年
李宇闻
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

在一示例性实施例中，一具有增强散热性的封装件包括一半导体芯片，所述半导体芯片包括一主载流电极或发热电极。所述半导体芯片的所述主载流电极面对所述封装件的顶部或远离下一级装配。所述封装件进一步包括一传导夹片和一散热件，所述传导夹片将所述主载流电极连接到下一级装配，所述散热件形成或集成在传导夹片上。散热件的一部分可选择性地外露。

Description

具有增强散热性的半导体封装结构
技术领域
[0001]本发明一般涉及半导体封装结构，尤其是涉及包封在具有改进了散热性的封装结构里的半导体元件。
背景技术
[0002]对于具有更高性能和更小尺寸的电子系统有着持续需求。这种需求使得电子元件设计者和生产者面临着许多挑战，这样的挑战包括：对半导体器件发出的热量的控制，所述半导体器件通常紧密排列在一起或紧邻电路板上的敏感逻辑电路。
[0003]在当前的封装结构中，普遍使用塑料封装装置。但塑料封装存在的一个问题是，塑料成形材料常常限制了封装件的热传导性。这样，半导体器件产生的大部分热量通过封装的下部传递，所述封装紧邻印刷电路板。由于印刷电路板变的越来越密集组装，所以电路板不能完全消散或处理大量的热量。一旦这样，电路板就会弯曲变形，导致电路板及其上面的元件受损。另外，热量本身也会损坏电路板上的其它元件或组成电路板的材料。
[0004]由于这个问题，现在的半导体产业正在朝这样一种封装方式转移，所述封装方式可以将热量从封装的顶部传递出去，而不是通过印刷电路板来传递热量。然而，当前的设计有一些缺点，包括半导体器件外露或末钝化以及非标准的生产技术。这些缺点影响了可靠性，增加了生产成本和周期。此外，这种设计通常将装置置成主载流电极在下(比如，“源极在下(source-down)”)，因此，热量继续通过印刷电路板传递，所以这也不是一个有效的传热方式。
发明内容
[0005]因此，需要一种既能增强散热性，又不损害装置的可靠性、生产周期和成本的半导体封装。
根据本发明的一个方面，提供了一种半导体封装结构，包括：一电子芯片，其在第一表面上有一载流电极；一传导连接结构，其连接到所述载流电极上；一散热件，其连接到所述传导连接结构；以及一包封层，其覆盖了所述电子芯片的一部分、所述传导连接结构的一部分和所述散热件的至少一部分。
根据本发明的另一个方面，提供了一种具有增强散热性的无引线半导体封装结构，包括：一引线框架，其包含一端子部分；一半导体器件，其在一表面上具有一第一电极；一传导连接结构，其连接到所述第一电极和所述端子部分上；一热传导装置，其使用连接层连接到所述传导连接结构上；以及一钝化层，其覆盖所述半导体器件的至少一部分、所述连接结构的至少一部分和所述热传导装置的至少一部分。
根据本发明的再一个方面，提供了一种电子封装结构，包括：一半导体管芯，其具有一主载流电极；一传导结构，其具有一连接到所述主载流电极的连接部分；安装在所述传导结构上的单独的散热件；以及一包封层，其覆盖所述半导体管芯的至少一部分和所述传导结构的至少一部分，其中所述散热件嵌入在所述包封层内。
附图说明
[0006]图1所示是依据本发明实施例的封装结构的放大截面图；
[0007]图2所示是依据本发明第二实施例的封装结构的放大截面图；
[0008]图3所示是依据本发明第三实施例的封装结构的放大截面图；
[0009]图4至图7所示是用于本发明的可选散热件结构的视图；
[0010]图8a和图8b所示是用于本发明的更多散热件结构的视图；
[0011]图9所示是依据本发明第四实施例的封装结构的放大截面图；
[0012]图10所示是依据本发明第五实施例的封装结构的放大截面图；
[0013]图11所示是依据本发明另一实施例的封装结构的放大截面图；
[0014]图12所示是依据本发明又一实施例的封装结构的放大截面图；
[0015]图13所示是依据本发明再一实施例的封装结构的放大截面图；以及
[0016]图14a至图14d所示是依据本发明的可选散热件的部分上视图。
具体实施方式
[0017]为了便于理解，附图中的元件不一定按比例绘制，相同的元件编号会在适当的不同的图例中使用。虽然在描述本发明的时候使用了无引线封装实施例，但本领域的技术人员应当明白本发明同样适用于其它形式的封装，尤其是那些在其中高散热性很重要的封装。
[0018]图1所示是依据本发明，具有增强散热性或热传导性的半导体封装结构、无引线封装、无引线封装装置或封装10的放大截面图。封装装置10包括一传导基板或引线框架11，所述引线框架11包括一晶片托盘部分、板或管芯附着部分13以及一引线、终端、连接或焊盘(pad)部分14。引线框架11包括，比如铜、铜合金(例如：TOMAC 4、TAMAC 5、2ZFROFC或CDA194)、镀铜的铁/镍合金(如：镀铜合金42)、电镀铝，电镀塑料或类似物。电镀材料包括铜、银、多层镀，比如镍-钯以及和金。晶片托盘部分13和焊盘部分14用来与下一级封装(如：印刷电路板)上的压点相连或耦合。
[0019]封装10进一步包括一电子芯片或半导体器件17，其使用管芯附着层19黏着于晶片托盘部分13。半导体器件17包括诸如功率MOSFET器件、双极晶体管、绝缘栅双极晶体管、晶闸管、二极管、模拟或数字集成电路、敏感元件、无源元件或其它电子器件。在一示例性实施例中，半导体器件17包括一功率MOSFET器件，所述功率MOSFET器件包括一源极、上源极(up-source)或主载流电极或终端21、一漏极、下漏极(down-drain)或载流电极或终端23以及一栅极或控制电极(未显示)。源极21包括诸如可软焊金属(a solderable topmetal)、铝、铝合金等类似物。漏极23典型地包括可软焊金属层或诸如TiNiAg，CrNiAu层或类似物。依据本发明，半导体芯片17是主载流电极或源极在上或上源极(up-source)的结构。也就是说，半导体芯片17中主要产生热量的电极(比如，电极21)是远离或相对于封装10的一面的，所述面附着于下一级装配。这种定位促使热量从封装10的顶面28传递出去，而不是通过下一级装配或芯片本身传递。
[0020]一传导连接结构或传导夹片或带31连接到源极21和焊盘部分14，这样在半导体芯片17和焊盘部分14之间就有了电通路。传导夹片31利用诸如一个附着层24黏着于源电极21上。适合于附着层24的材料有焊料或高传导率的环氧树脂，比如可由日立化学公司获得的CEL9210HFLO(AL2)或CEL9750HFLO(AL3)环氧树脂、或可通过住友塑料美国公司获得的EMF 760a环氧树脂。例如，可以用相似的材料进一步将传导夹片31黏着于焊盘部分14。
[0021]一散热件、散热性结构或热传导装置或夹片或带32集成、形成或连接(直接或间接)到传导夹片31上。在一示例性实施例中，散热件32利用附着层34黏着于传导夹片31上。在一示例性实施中，散热件32由桥形组成。夹片31和散热件32包括诸如硬铜或铜合金，并可以镀银以用于焊接连接或传导环氧树脂连接。或者，散热件32包括一种以下所述的软性或顺应性材料。适合于附着层34的材料包括：焊料或高传导率的环氧树脂材料，比如可通过日立化学公司获得的CEL9210HFLO(AL2)或CEL9750HFLO(AL3)环氧树脂，或可通过住友塑料美国公司获得的EMF 760a环氧树脂。夹片31通过焊料或传导环氧树脂等之类的材料黏着于焊盘部分14。
[0022]依据本发明，夹片31被设计成能有大面积黏着于电极21上，这样可以减小封装10的电阻。集成的散热件结构32用来增强将主载流电极产生的热量传递出封装10。这样就降低了热阻并改进了整个封装10的性能和稳定性。
[0023]在引线框架11、半导体芯片17的至少一部分、连接结构31的至少一部分和散热件结构32的至少一部分的上面有一利用单腔模具或低压注塑工艺形成的包封层或钝化层29。在图1所示的实施例中，为了进一步改善散热性，散热件结构32的一部分322是可选择的外露或不被包封层29覆盖的。或者如图9所示，包封层29覆盖散热件结构32。在更进一步的实施例中，在封装10的顶面28的上面有一可选的导热但电绝缘的层280(比如热脂或类似物)。因为是可选的，图1中只显示了部分层280。应当明白，当使用的时候，层280优选地覆盖整个顶面28。
[0024]在形成封装10的一个优选方法里，当连接结构31和散热件结构32黏着在一起、形成、或集成后，将装置放进造模设备里以便于部分322接触或邻接模穴的一个表面。模穴的这个表面可以充当掩膜防止包封层29覆盖散热件结构32的部分322。应当明白，这种方法也适用于形成这里所描述的其它具有外露散热件部分的封装实施例。
[0025]在一示例性实施例中，包封层29包括一种高热导率的成型材料。优选地，包封层29包括一种热导率大于大约3.0Watts/MK的成型材料。合适的高传导率的成型材料可以通过加利福尼亚住友塑料美国公司(比如EME A700系列)或加利福尼亚日立化学公司比如CEL 9000系列成型材料)获得。
[0026]如图所示，连接结构31和散热件结构32具有一个或多个可选的模锁(mold lock)特征或槽口(notch)39，所述槽口39是用来在包封层29、连接结构31和/或散热件结构32之间提供更好的附着。更多或更少的槽口39也是可以的。应当明白，槽口39可以选择性地并入这里所论述的任何连接结构/散热件结构。
[0027]图2所示是依据本发明的第二实施例半导体封装结构、无引线封装、无引线封装装置或封装20的放大截面图。封装20不含有引线框架11，而半导体芯片17的电极或端子23是外露的以直接和下一级装配连接。除去引线框线11后，整个封装外形就变薄了。一连接结构或传导夹片310通过附着层24黏着于源极21，且传导夹片310的远端311成形以便也连接到下一级装配。在该实施例中，散热件包括一带式连接结构320。
[0028]带式连接结构320是指一柔性的矩形导体，所述矩形导体的宽度要大于厚度。适合于带式连接结构的材料包括：金、铝、银、钯、铜或类似物。可以通过诸如楔形接合将带式连接结构320黏着于连接结构310。在一实施例中，形成带式连接结构320，其厚度为大约25微米，宽度大约为75微米。或者，形成的典型的带式连接结构320的厚度在6到50微米之间，宽度在50到1，500微米之间。在图示的实施例中，带式连接结构320的部分321是外露或没有被包封层29覆盖的，这样可以进一步增强散热性。在一可选实施例中，虽然包封层29覆盖了带式连接结构320，但将部分321和顶面28之间的距离降到了最小，以使热阻最小化。
[0029]图3所示是依据本发明的第三实施例的半导体封装结构、无引线封装、无引线封装装置或封装30的放大截面图。在封装30中，除了顺应性或柔性散热件结构323外，封装30与封装10类似。散热件结构323包括铜或铜合金，并可以选择性地镀上银以用于焊料连接或传导环氧树脂连接。
[0030]散热件结构323是U型或马蹄型的，并且在结构中象弹簧一样有弹性或适应性，这样在压缩力的作用下就可保持膨胀或压缩的状态以保证压模后一个部分324外露。比如，如果晶片托盘部分13、半导体芯片17、和/或夹片31处于厚度公差的下极限偏差，散热件结构323保持膨胀以便于在压模时接触到型面。如果晶片托盘部分13、半导体芯片17、和/或夹片31处于厚度公差的上极限偏差，散热件性结构323压缩以便于在压模时能适应更厚的外形。
[0031]图4，图5，图6所示是顺应或适应性散热件结构的可选实施例。比如，图4所示是一顺应性椭圆形或卵形散热件或夹片423的侧视图。图5所示是一顺应性弹簧似的圆形、弹簧形、线圈形或螺旋形散热结构523的侧视图。图6所示是热传导材料623的顺应性海绵状或百洁布(scouring pad)状的网栅或随机模型或网栅。在一示例性实施例中，网栅623包括金属网栅(比如铜或类似物)。在一可选实施例中，为了进一步增强散热性，将网栅623放置在此处所述的连接结构和其它散热件结构之间。比如在图9中，为了配置一个第二散热件结构，网栅623被加进夹片131和散热件结构32之间。由于是可选的，在图9中只显示了部分网栅623。应当明白，网栅623可充分地填满也可部分地填充连接结构和其它散热件之间的空间。
[0032]图7显示的是一包含一个或多个鳍状部分724的散热件结构723的侧视图，其适用于此处公布的实施例。
[0033]图8a和图8b所示是引线接合结构的侧视图，其适合于连接到此处所述夹片(如夹片31)以配置进一步的散热件结构。图8a所示是一球形接合(ball bond)结构823，其是通过常规球形接合(ballbonding)工艺形成在连接结构上的。图8b所示是一楔形接合(wedgebond)或针脚式接合(stitch bond)结构825，其是通过常规楔形接合工艺形成在连接结构上的。散热件823和825包含诸如铝或类似物。
[0034]图9所示是依据本发明的第四实施例半导体封装结构、无引线封装、无引线封装装置或封装40的放大截面图。在封装40中，除了包封层29覆盖了整个散热件结构32以便使散热件结构32不外露外，封装40与封装10类似。优选地，散热件32与顶面28之间的距离86被减到最小以使热阻最小。在一示例性实施例中，距离86小于大约0.13毫米。同时，封装40包括一平的或大体上平的连接结构或夹片131，该连接结构的一端连接于半导体芯片17的电极21，另一端连接于焊盘部分141。另外，如图所示，在封装40中，半导体芯片的终端23是外露的以便于连接到下一级装配中。如上所述，封装40中包含有可选的网栅623，该网栅用来作为第二或附加的散热件。
[0035]图10所示是依据本发明的第五实施例半导体封装结构、无引线封装、无引线封装装置或封装50的放大截面图。在封装50中，除了散热件结构包括多个传导球状物或球326外，封装50与封装10类似。在一示例性实施例中，球326是金属球状物，包括铜、焊料、金、铝、金属镀层的陶瓷或金属镀层的塑料或类似物，该金属球可利用诸如焊料或环氧树脂连接。或者，球状物328通过压线连接方式形成在夹片31上，且包括铝或类似物。优选地，为了进一步增强散热性，如图所示，球326或328的部分327或329通过包封层29外露。或者，为了将热阻减到最小，包封层29在接近封装50的表面覆盖球326的剩余部分。
[0036]图11所示是依据本发明的又一实施例半导体封装结构、无引线封装、无引线封装装置或封装60的放大截面图。在封装60中，除封装60进一步包括一第二半导体芯片或器件117外，封装60与封装10类似。第二器件117可与半导体芯片17相同也可不同。在一示例实施例中，当半导体芯片17包含一功率MOSFET时，第二器件包含一肖特基二极管，该肖特基二极管包括一连接于夹片31的终端或电极123。比如，终端123通过附着层119连接于夹片31。终端123电连接于夹片31，或通过利用分层结构(比如通过绝缘层与压31分离的导电层)获得的与终端123的电接触，可与夹片31隔离。通过第二连接结构或夹片231，另一个终端或电极121被连接于封装60的另一个焊盘部分上(未显示)。在该实施例中，比如为了节省空间，散热件结构32横跨在第二零件117之上。
[0037]图12所示是依据本发明的又一实施例半导体封装结构、无引线封装、无引线封装装置或封装70的放大截面图。在封装70中，连接结构732用作散热结构，如上所述，传导板或圆盘731通过附着层34将电极21连接到连接结构732，除此之外，封装70和封装10类似。在一示例性实施例中，板731设计成可以匹配电极21的形状或轮廊以提供最佳的热和电传导性能。无需改变连接结构732，板731可以匹配电极21，因此改善了可制造性。可选地，为了进一步改善可制造性，可以在圆晶级(wafer level)将板731成形在半导体芯片17上。
[0038]在如图12所示的实施例中，连接结构732与图3中的散热件323类似，具有顺应性或适应性形状，这样可以补偿各种零件的厚度公差变化。在一可选实施例中，连接结构732具有与连接结构31或310(如果除去引线框架11)类似的形状。连接结构732和传导板731包括所描述的类似于连接结构31和散热件32的材料。连接结构732包括一可选择的外露的部分733。连接结构732的连接部分734的长度可和传导板732的宽度相同也可不同。
[0039]图13所示是依据本发明的再一实施例半导体封装结构、无引线封装、无引线封装装置或封装80的放大截面图。在封装80中，传导结构830包括连接部分或结构831和散热件部分832，所述散热件部分自或作为一单体材料被连接、集成或形成，除此之外，封装80和封装10类似。如图13所示，散热件部分832远离半导体芯片17延伸并邻近或接近封装80的表面28。在一示例性实施例中，散热件832的一部分833是外露的。在一可选实施例中，散热件832是被覆盖的。优选地，传导结构830具有顺应性或适应性形状，这样可以补偿各种零件的厚度公差变化。传导结构830包括所描述的类似于连接结构31或散热件32的材料。在进一步的实施例中，传导结构830被反转过来以类似于图12所示的连接结构732的形状。
[0040]此处所示的散热件可具有实心的或连续的形状或形式。图14a至图14d所示是散热件32、321、323、423、723和832的各种可选形状、部分或形式的部分上视图。除了别的以外，这些形状增强了包封层29和散热件部分之间的附着力。图14a所示是一梳状或鳍状部分130a；图14b所示是一棋盘状部分130b，其中包括开口或孔131；图14c所示是一锯齿形状或部分130c；以及图14d所示是一散热件130d，其包括一”C”型的切除部分135。
[0041]总之，以上论述了一种封装结构，所述封装结构包括集成的连接/散热装置的不同实施例，除了别的之外，这`增强了散热性或热传导性。

Claims (10)

1.一种半导体封装结构，包括：
一电子芯片，其在第一表面上有一载流电极；
一传导连接结构，其连接到所述载流电极上；
一散热件，其连接到所述传导连接结构；以及
一包封层，其覆盖了所述电子芯片的一部分、所述传导连接结构的一部分和所述散热件的至少一部分。
2.如权利要求1所述的封装结构，其中所述散热件包括”U”形、线圈形或椭圆形中的一个。
3.如权利要求1所述的封装结构，其中所述散热件包括传导网栅。
4.如权利要求1所述的封装结构，其中所述散热件包括带式连接。
5.如权利要求1所述的封装结构，其中所述散热件包括多个球状形状。
6.如权利要求1所述的封装结构，进一步包括一第二电子元件，所述第二电子元件连接到所述传导连接结构。
7.一种具有增强散热性的无引线半导体封装结构，包括：
一引线框架，其包含一端子部分；
一半导体器件，其在一表面上具有一第一电极；
一传导连接结构，其连接到所述第一电极和所述端子部分上；
一热传导装置，其通过附着层连接到所述传导连接结构上；以及
一钝化层，其覆盖所述半导体器件的至少一部分、所述连接结构的至少一部分和所述热传导装置的至少一部分。
8.如权利要求7所述的封装结构，其中所述热传导装置包括带状连接、引线接合、桥形夹片、U型夹片、椭圆形夹片、多球状形状、具有鳍状部分的散热件、传导网栅或线圈形散热件中的一个。
9.一种电子封装结构，包括：
一半导体管芯，其具有一主载流电极；
一传导结构，其具有一连接到所述主载流电极的连接部分；
安装在所述传导结构上的单独的散热件；以及
一包封层，其覆盖所述半导体管芯的至少一部分和所述传导结构的至少一部分，其中所述散热件嵌入在所述包封层内。
10.如权利要求9所述的电子封装结构，其中所述散热件部分的一部分外露以增强散热性。
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