CN100426473C - Plasma etching method and plasma etching apparatus - Google Patents
Plasma etching method and plasma etching apparatus Download PDFInfo
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- CN100426473C CN100426473C CNB200510114957XA CN200510114957A CN100426473C CN 100426473 C CN100426473 C CN 100426473C CN B200510114957X A CNB200510114957X A CN B200510114957XA CN 200510114957 A CN200510114957 A CN 200510114957A CN 100426473 C CN100426473 C CN 100426473C
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Abstract
To provide a plasma etching method and plasma etching apparatus which can etch an SiC layer with high selectivity with respect to an SiOC layer. On the surface of the semiconductor wafer W of a work piece; the SiOC layer 101, the SiC layer 102, and a Cu interconnection layer 103 are formed from top to bottom. In the SiOC layer 101, an opening 111 for forming a via is formed. With the SiOC layer 101 as a mask, the SiC layer 102 is selectively plasma-etched using an NF<SB>3</SB>/He/Ar mixed as as an etching gas to form an opening 112 continuous with the opening 111.
Description
Technical field
The present invention relates to the etching gas plasmaization, utilizes the plasma etching method and the plasma-etching apparatus of the SiC layer that this plasma etching forms on substance to be processed.
Background technology
For many years, in the manufacture process of semiconductor device, using plasma etching mostly.In known this type of plasma etching, constitute the oxidation film layer (SiO of insulating barrier relatively
2Layer), selectively the SiC layer that forms on the substance to be processed is carried out in the etched plasma etching, use CHF
3And N
2Mist constitute etching gas (for example, with reference to patent documentation 1).
In recent years, in the manufacturing field of semiconductor device, by the existing SiO that uses
2Layer forms the littler so-called Low-K film of dielectric constant as the oxide-film that constitutes insulating barrier, for example, can use SiOC (CDO (Carbon-doped oxide)) etc.
Yet, use the above-mentioned CHF that forms etching gas
3And N
2Mist, when the SiC layer is carried out etching, can not obtain the sufficient selectivity of relative SiOC layer, so exist so-called the selection to be lower than 2 problem than (etch-rate of the etch-rate of SiC layer/SiOC layer).
[patent documentation 1] TOHKEMY 2004-140025 communique
Summary of the invention
The present invention carries out at above-mentioned existing problem, and a kind of relatively plasma-etching method and plasma-etching apparatus of the etching SiC layer that the SiOC layer-selective is high is provided.
In order to achieve the above object, the plasma-etching method of first aspect present invention with the etching gas plasmaization, utilizes this plasma, and the SiC layer that forms on the object being treated is carried out etching, and wherein: above-mentioned etching gas contains NF at least
3Gas, He gas and Ar gas.
The plasma-etching method of second aspect present invention is characterized in that: in the described plasma etching method of first aspect, form the SiOC layer on above-mentioned object being treated, this SiOC layer carries out etching to above-mentioned SiC layer selectively relatively.
The plasma-etching method of a third aspect of the present invention is characterized in that: in the described plasma-etching method of second aspect, be formed with the SiOC layer at the upside of above-mentioned SiC layer, this SiOC layer as mask, is carried out etching to above-mentioned SiC layer.
The plasma-etching method of fourth aspect present invention is characterized in that: in each described plasma-etching method, above-mentioned object being treated is cooled to carry out plasma etching below 30 ℃ in aspect the first～three.
The plasma-etching method of fifth aspect present invention, it is characterized in that: in aspect the first～four in each described plasma-etching method, above-mentioned object being treated is contained in the container handling, above-mentioned etching gas is imported in the above-mentioned container handling, make that the residence time of this etching gas is 0.36 millisecond～1.44 milliseconds.
The sixth aspect present invention plasma-etching method, it is characterized in that: in aspect the first～five in each described plasma-etching method, above-mentioned object being treated is contained in the container handling,, makes pressure reach 2Pa～6Pa reducing pressure in this container handling.
The plasma-etching method of seventh aspect present invention is characterized in that: in each described plasma-etching method, above-mentioned etching gas contains with respect to NF in aspect the first～six
3Its flow-rate ratio of gas is at CF class gas below 1/2 or CHF class gas.
The plasma-etching method of eighth aspect present invention, it is characterized in that: in aspect the first～seven in each described plasma-etching method, above-mentioned object being treated is positioned on the lower electrode, to be configured in the lower electrode relative position on upper electrode supply with and to have first High frequency power of first frequency, simultaneously, apply second High frequency power of second frequency to above-mentioned lower electrode, carry out plasma etching with frequency lower than first High frequency power.
The plasma-etching method of ninth aspect present invention is characterized in that: in the described plasma-etching method of eight aspect, the electric density of above-mentioned first High frequency power that applies to upper electrode is 0.07W/cm
2～0.7W/cm
2
The plasma-etching method of tenth aspect present invention is characterized in that: in the described plasma-etching method of eight aspect, the electric density of above-mentioned second High frequency power that applies to lower electrode is 0.07W/cm
2～0.21W/cm
2
The present invention the tenth plasma-etching apparatus on the one hand with the etching gas plasmaization, utilizes this plasma that the SiC layer that forms on the object being treated is carried out etching, wherein, as above-mentioned etching gas, has supply and contains NF at least
3Gas, the gas feed unit of He gas and Ar gas.
The plasma-etching apparatus of the present invention the 12 aspect is characterized in that: in the plasma-etching apparatus described in the tenth one side, form the SiOC layer on above-mentioned object being treated, this SiOC layer has the above-mentioned SiC layer of selectively etching relatively.
The plasma-etching apparatus of the present invention the 13 aspect is characterized in that: in the plasma-etching apparatus described in aspect the 12, be formed with above-mentioned SiOC layer at the upside of above-mentioned SiC layer, this SiOC layer as mask, is carried out etching to this SiC layer.
The plasma-etching apparatus of the present invention the 14 aspect is characterized in that: in aspect the 11～13 in each described plasma-etching apparatus, have above-mentioned object being treated is cooled to carry out the cooling body of plasma etching below 30 ℃.
The plasma-etching apparatus of the present invention the 15 aspect, it is characterized in that: in aspect the 11～14 in each described plasma-etching apparatus, has the container handling that holds above-mentioned object being treated, with the above-mentioned etching gas of importing in above-mentioned container handling, make the residence time of this etching gas reach 0.36 millisecond～1.44 milliseconds unit.
The plasma-etching apparatus of the present invention the 16 aspect is characterized in that: aspect the 11～15 in each described plasma-etching apparatus, have the reduce pressure unit of 2Pa～6Pa of the pressure in the above-mentioned container handling.
The plasma-etching apparatus of the present invention the 17 aspect is characterized in that: in each described plasma-etching apparatus, as above-mentioned etching gas, have to supply with and contain with respect to NF aspect the 11～16
3The flow-rate ratio of gas is at the gas feed unit of CF class gas below 1/2 or CHF class gas.
The plasma-etching apparatus of the present invention's the tenth eight aspect is characterized in that: in each described plasma-etching apparatus, have the lower electrode of the above-mentioned object being treated of mounting aspect the 11～17; Upper electrode with above-mentioned lower electrode subtend configuration; Supply with the first High frequency power feed unit of first High frequency power with first frequency to above-mentioned upper electrode; Apply the second High frequency power feed unit of second High frequency power of second frequency with frequency lower than above-mentioned first High frequency power to described lower electrode.
The plasma-etching apparatus of the present invention the 19 aspect is characterized in that: in the described plasma-etching apparatus of the tenth eight aspect, the feed unit of above-mentioned first High frequency power is supplied with 0.07W/cm to above-mentioned upper electrode
2～0.7W/cm
2Electric power.
The plasma-etching apparatus of the present invention the 20 aspect is characterized in that: in the described plasma-etching apparatus of the tenth eight aspect, the above-mentioned second High frequency power feed unit is supplied with 0.07W/cm to above-mentioned lower electrode
2～0.21W/cm
2Electric power.
According to the present invention, can provide a kind of at the SiO layer-selective high, the SiC layer is carried out etched plasma etching method and plasma-etching apparatus.
Description of drawings
Fig. 1 is the enlarged drawing of the semiconductor wafer main composition part of an embodiment of the present invention.
Fig. 2 is the concise and to the point pie graph of the plasma-etching apparatus that uses in the embodiment of the present invention.
Fig. 3 is the key diagram of the sidewall shape of opening portion.
Symbol description
The W semiconductor wafer; 101 SiOC layers; 102 SiC layers; 103 copper wiring layers; 110 grooves; The peristome of 111 SiOC layers; The peristome of 112 SiC layers; 113 paths
Embodiment
Following with reference to accompanying drawing, describe embodiments of the present invention in detail.
Fig. 1 is the semiconductor wafer W section constitution enlarged drawing of present embodiment, and Fig. 2 is that the plasma-etching apparatus of present embodiment constitutes diagrammatic sketch.The formation of plasma etching apparatus at first, is described with reference to Fig. 2.Plasma-etching apparatus 1, its formation are electrode parallel subtends up and down, and a side connects plasma and forms with power supply capacitive coupling type parallel flat Etaching device.
Plasma-etching apparatus 1 for example has aluminium of yittrium oxide being arranged by surperficial spraying plating etc. and forms chamber cylindraceous (container handling) 2, these chamber 2 ground connection.Bottom in chamber 2, the insulation board 3 across pottery etc. is provided with the mounting object being treated, for example semiconductor wafer W be about columned base support platform 4, on this base support platform 4, be provided with the pedestal 5 that constitutes lower electrode.This pedestal 5 is connected with high pass filter (HPF) 6.
Be provided with cryogen chamber 7 in the inside of base support platform 4, in this cryogen chamber 7, import cryogen by cryogen ingress pipe 8, and circulate, with its cold and hot semiconductor wafer W that is delivered to, semiconductor wafer W can be controlled at the temperature of regulation thus by pedestal 5.
In insulation board 3, base support platform 4, pedestal 5, the electrostatic chuck 11, be provided with gas passage 14 from heat transfer medium (for example He gas etc.) to the semiconductor wafer W back side that supply with, by this heat transfer medium, with the cold and hot semiconductor wafer W that passes to of pedestal 5, semiconductor wafer W can be remained on the temperature of regulation.
The mode that is positioned in the semiconductor wafer W on the electrostatic chuck 11 with encirclement at the upper end of pedestal 5 periphery is provided with the focusing ring (focus Ring) 15 of ring-type.This focusing ring 15 for example, is made of conductive materials such as silicon, has the effect that improves etch uniformity.
Above pedestal 5, upper electrode 21 is set with these pedestal 5 parallel subtends.This upper electrode 21, across insulating material 22, be bearing in the top of chamber 2, form opposite face with pedestal 5, and have a plurality of spray-holes 23, for example, carrying out being provided with on the aluminium of anodized (pellumina processing) electrode support 25 that the conductive material of battery lead plate 24 that quartzy cover layer constitutes and this electrode 24 of supporting constitutes by the surface is constituted.Distance between pedestal 5 and the upper electrode 21 can change.
Electrode support 25 central authorities at upper electrode 21 are provided with gas introduction port 26, and this gas introduction port 26 connects gas supply pipe 27.And then this gas supply pipe 27 is by valve 28, and mass flow controller 29 is connected with processing gas supply source 30.Supply with the required etching gas of plasma etching by handling gas supply source 30.In the present embodiment, contain NF at least by these processing gas supply source 30 supplies
3, He and Ar etching gas.
The bottom of chamber 2 is connected with blast pipe 31, and this blast pipe 31 is connected with exhaust apparatus 35.Exhaust apparatus 35 has turbomolecular pump equal vacuum pump, makes the depressed gas environment that form regulation in the chamber 2, for example is evacuated down to the pressure of 1Pa following provisions.In addition, the family of power and influence 32 is set on the sidewall of chamber 2, under the state that this family of power and influence 32 opens, semiconductor wafer W is carried between the load locking room (not shown) of adjacency.
The plasma-etching apparatus 1 of above-mentioned formation, its work is by control section 60 unified controls.Be provided with the recording medium of the program of control sequence shown in the record in the control section 60, control section 60 carries out the control of following etch processes work according to the program that reads from this recording medium.Below the SiC layer that forms on 1 pair of semiconductor wafer W of plasma-etching apparatus of utilizing above-mentioned formation carried out etched situation describe.
At first, open the family of power and influence 32 after, never illustrated load locking room is sent into semiconductor wafer W in the chamber 2, is positioned on the electrostatic chuck 11, applies direct voltage by high-voltage DC power supply 13, makes the semiconductor wafer W Electrostatic Absorption on electrostatic chuck 11.Then, close the family of power and influence 32, will be evacuated down to the specified vacuum degree in the chamber 2 by exhaust apparatus 35.
Subsequently, open valve 28, handle the etching gas that gas supply source 30 is supplied with, for example NF Yi Bian for example utilize mass flow controller 29 to adjust
3The flow of/He/Ar gaseous mixture, on one side by handling gas supply pipe 27, gas introduction port 26 imports to the hollow space of upper electrode 21, by the spray-hole 23 of battery lead plate 24, represents as Fig. 2 arrow again, and semi-conductive wafer W is evenly sprayed.
Pressure in the chamber 2 keeps the pressure of regulation.Subsequently, apply the High frequency power of assigned frequency to upper electrode 21 by the first High frequency power source 40.Thus, produce the high-frequency electrical field of force at upper electrode 21 with between, etching gas disassociation plasmaization as the pedestal 5 of lower electrode.
On the other hand, apply the low High frequency power in the above-mentioned first High frequency power source 40 of frequency ratio by the second High frequency power source 50 to the pedestal 5 of lower electrode, thus, the ion in the plasma is assembled to pedestal 5 sides, because ion assists to have improved etched anisotropy.
When the regulation etch processes finishes, stop supply high frequency electric power and etching gas, in chamber 2, shift out semiconductor wafer W according to the order opposite with said sequence.
Then, with reference to Fig. 1, the plasma-etching method of present embodiment is described.
Shown in Fig. 1 (a), on semiconductor wafer W surface, be formed with SiOC layer 101 as object being treated.Downside at SiOC layer 101 forms SiC layer 102, at the downside formation Cu of SiC layer 102 wiring layer 103.
In addition, on SiOC layer 101, left and right directions in the figure makes SiOC layer 101 form the groove 110 of wire depression.In the bottom of this groove 110, form the peristome 111 that forms path.This opening portion 111, for example, with diaphragm (resist) as mask, with CF class gas and Ar gas and O
2The gaseous mixtures of gas etc. utilize plasma etching to form as etching gas, subsequently, utilize and use O
2The ashing treatment of gas (ashing) is removed diaphragm, forms the state shown in Fig. 1 (a).
By the state shown in Fig. 1 (a), shown in Fig. 1 (b), with SiOC layer 101 as mask, with NF
3The mist of/He/Ar carries out plasma etching as etching gas to SiC layer 102, forms the peristome 112 that is connected with peristome 111, and forms the path 113 that reaches Cu wiring layer 103.
At this moment, as etching gas, contain NF at least by using
3, He and Ar gas, can improve SiC layer 102 etched selectivity with respect to SiOC layer 101.
As embodiment 1, according to following etching condition, that is, and NF
3/ He/Ar=4/240/200sccm, pressure 6Pa (45mTorr), electric power (upper/lower)=400/150W, temperature (top/side wall portion/bottom)=80/60/0 ℃, cooling are carried out plasma etching with helium pressure (central portion/periphery)=1330/1330Pa (10/10Torr), interelectrode distance=170mm.Its result, the etch-rate of SiC is 148nm/min, the etch-rate of SiOC is 9.0nm/min, selects than being 16.4.
Then, except above-mentioned etching condition, the etching condition investigation result that explanation may be used is in above-mentioned etching condition, because pressure is 6Pa (45mTorr), etching gas total flow is that the volume of 444sccm, chamber 2 is 901, so the residence time is 0.72 millisecond.
When the total flow of etching gas is taken as half (222sccm), that is, and NF
3During/He/Ar=2/120/100sccm, the residence time is 1.44 milliseconds.With the etching gas of this flow, other etching conditions are identical with embodiment 1, and when carrying out etching, the etch-rate of SiC is 108nm/min, and the etch-rate of SiOC is 8.9nm/min, select than being 12.1.
In addition, when the total flow of etching gas is doubled (888sccm), that is, and NF
3During/He/Ar=8/480/400sccm, the residence time is 0.36 millisecond, and this moment, the etch-rate of SiC was 132nm/min, and the etch-rate of SiOC is 30.0nm/min.Select than being 4.40.
As mentioned above, increase total flow, when reducing the residence time, the etch-rate that can be observed SiOC rises, and selects than the tendency that reduces.In addition, reduce total flow, when increasing the residence time, the etch-rate of observing SiC is tending towards reducing, for this reason, the residence time, be preferably about 0.72 millisecond～1.44 milliseconds, be preferably 0.36 millisecond～1.44 milliseconds at least.
Below about the flow-rate ratio of etching gas, according to the condition of embodiment 1, reduce the flow of Ar, be taken as NF
3During/He/Ar=4/240/50sccm, further increase the flow of He thus, be taken as NF
3During/He/Ar=4/480/50sccm, can obtain the selection ratio much the same with the situation of the foregoing description 1, therefore, the scope of this flow-rate ratio is spendable scope.
On the other hand, the flow of Ar is taken as 0, is taken as NF
3During/He/Ar=6/120/0sccm, the etch-rate of SiC is 82nm/min, and the etch-rate of SiOC is 62nm/min, selects than being 1.32.Therefore in order to ensure selecting ratio, it is indispensable adding Ar.
About pressure,, can obtain the selection ratio much the same with embodiment 1 situation even when being taken as 2Pa (15mTorr).Therefore, spendable pressure is at least the scope of 2～6Pa.
About the electric power that applies to upper electrode 21, when being taken as 50W, when being taken as 500W, can both obtain the selection ratio roughly the same with embodiment 1 situation (situation of 400W).Therefore, to the electric power that upper electrode 21 applies, can use the scope of 50W～500W at least.At this moment, because the diameter of semiconductor wafer W is 300mm,, be 0.07W/cm if represent with power density
2～0.7W/cm
2Scope.
On the other hand, the electric power to lower electrode (pedestal 5) applies when being taken as 50W, when being taken as 100W, all can obtain and implement the much the same selection ratio of 1 situation (situation of 150W).Therefore, the electric power to lower electrode (pedestal 5) applies can use 50W～150W at least.In this case, the diameter of semiconductor wafer W is 300mm, when representing with power density, is 0.07W/cm
2～0.21W/cm
2Scope.
Below the influence to etching state describes to temperature of lower (temperature of pedestal 5), temperature of lower (temperature of pedestal) when being taken as 70 ℃ and 30 ℃ the time, can be obtained and the much the same selection ratio of 0 ℃ of situation of embodiment 1.But, in the time of 70 ℃, as shown in Figure 3, the shape of the side wall portion 112a of SiC layer 102 upper shed portion 112 is not to form straight line, but forms crooked laterally shape, like this, the shape of the inner wall part of path 113 forms crooked laterally shape, when imbedding conductor such as copper subsequently, can produce problems such as hole.
The shape of above-mentioned side wall portion 112a.Degree of crook in the time of 30 ℃ during than 70 ℃ reduces, and the degree of crook in the time of 0 ℃ during than 30 ℃ reduces again.Thus, when temperature of lower (temperature of pedestal 5) is very high, it is crooked that the sidewall 112a shape of opening portion 112 is tending towards, by reducing temperature, can reduce this trend, therefore, for the inner wall part shape that makes path 113 shape that is in line, temperature of lower (temperature of pedestal 5) is preferably below 30 ℃, more preferably below 0 ℃.
For the inner wall section shape with above-mentioned path 113 forms straight line, in above-mentioned etching gas, preferably add CHF class gas or CF class gas.For example, CH
2F
2Deng.In fact, etching gas is taken as NF
3/ He/Ar/CH
2F
2=4/240/200/2sccm, other etching conditions are identical with embodiment 1, when carrying out etching, can obtain the path 113 that side wall portion 112a is shaped as linearity.But in this case, the etching speed of SiC is 124nm/min, and the etch-rate of SiOC is 54.9nm/min, selects than being 2.26.
As above-mentioned, in etching gas, add CH
2F
2Deng the time, though can form the side wall portion 112a of rectilinear form,, improved the etch-rate of SiOC, reduced and selected ratio.For example, above-mentioned CH
2F
2Addition be increased to 4sccm from 2sccm, when and NF
3Flow be during with flow, select than being lower than 2, be 1.90.Thus, the gas of CHF class gas or CF class, its flow preferably is lower than 1/2 NF
3Flow.
Claims (18)
1. a plasma-etching method with the etching gas plasmaization, utilizes this plasma that the SiC layer that forms on the object being treated is carried out etching, and wherein: described etching gas contains NF at least
3Gas, He gas and Ar gas,
Form the SiOC layer on described object being treated, this SiOC layer carries out etching to described SiC layer selectively relatively.
2. plasma-etching method as claimed in claim 1 is characterized in that: form described SiOC layer on the upside of described SiC layer, this SiOC layer as mask, is carried out etching to described SiC layer.
3. plasma-etching method as claimed in claim 1 or 2 is characterized in that: described object being treated is cooled to carry out plasma etching below 30 ℃.
4. plasma-etching method as claimed in claim 1 or 2 is characterized in that: described object being treated is contained in the container handling, imports described etching gas in this container handling, and the residence time that makes this etching gas is 0.36 millisecond～1.44 milliseconds.
5. plasma-etching method as claimed in claim 1 or 2 is characterized in that: described object being treated is contained in the container handling, to reducing pressure in this container handling, makes pressure reach 2Pa～6Pa.
6. plasma-etching method as claimed in claim 1 or 2 is characterized in that: described etching gas contains with respect to NF
3The flow-rate ratio of gas is at CF class gas below 1/2 or CHF class gas.
7. plasma-etching method as claimed in claim 1 or 2, it is characterized in that: described object being treated is positioned on the lower electrode, has first High frequency power of first frequency to supplying with the upper electrode of described lower electrode subtend configuration, simultaneously, apply second High frequency power to described lower electrode, carry out plasma etching with the second frequency that is lower than first High frequency power.
8. plasma-etching method as claimed in claim 7 is characterized in that: to first High frequency power that described upper electrode applies, its power density is 0.07W/cm
2～0.7W/cm
2
9. plasma-etching method as claimed in claim 7 is characterized in that: to second High frequency power that described lower electrode applies, its power density is 0.07W/cm
2～0.21W/cm
2
10. a plasma-etching apparatus with the etching gas plasmaization, utilizes this plasma to carry out etching to forming the SiC layer on the object being treated, wherein, has supply and contains NF at least
3Gas, He gas and Ar gas is as the gas feed unit of described etching gas,
On described object being treated, form SiOC layer, this SiOC layer, the described SiC layer of etching selectively relatively.
11. plasma-etching apparatus as claimed in claim 10 is characterized in that: the upside at described SiC layer forms described SiOC layer, and this SiOC layer as mask, is carried out etching to described SiC layer.
12., it is characterized in that: have described object being treated is cooled to carry out the cooling body of plasma etching below 30 ℃ as claim 10 or 11 described plasma-etching apparatus.
13. as claim 10 or 11 described plasma-etching apparatus, it is characterized in that: have the container handling that holds described object being treated, with the described etching gas of importing in described container handling, make the residence time of this etching gas reach 0.36 millisecond～1.44 milliseconds unit.
14. as claim 10 or 11 described plasma-etching apparatus, it is characterized in that: have with the pressure in the described container handling unit of the 2Pa～6Pa that reduces pressure.
15., it is characterized in that: have to supply with and contain with respect to NF as claim 10 or 11 described plasma-etching apparatus
3Its flow-rate ratio of gas is at the CF class gas below 1/2 or the CHF class gas feed unit as described etching gas.
16., it is characterized in that having as claim 10 or 11 described plasma-etching apparatus:
The lower electrode of the described object being treated of mounting;
Upper electrode with described lower electrode subtend setting;
Supply with the first High frequency power feed unit of first High frequency power with first frequency to described upper electrode; With
Apply the second High frequency power feed unit of second High frequency power with the second frequency that is lower than described first High frequency power to described lower electrode.
17. plasma-etching apparatus as claimed in claim 16 is characterized in that: the described first High frequency power feed unit, supply with 0.07W/cm to described upper electrode
2～0.7W/cm
2Electric power.
18. plasma-etching apparatus as claimed in claim 16 is characterized in that: described second apparatus for supplying RF power, supply with 0.07W/cm to described lower electrode
2～0.21W/cm
2Electric power.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004331759A JP4615290B2 (en) | 2004-11-16 | 2004-11-16 | Plasma etching method |
| JP2004331759 | 2004-11-16 | ||
| JP2004-331759 | 2004-11-16 |
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|---|---|
| CN1790628A CN1790628A (en) | 2006-06-21 |
| CN100426473C true CN100426473C (en) | 2008-10-15 |
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|---|---|---|---|---|
| CN105390368A (en) * | 2014-09-09 | 2016-03-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer precleaning cavity and semiconductor processing equipment |
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| JP5082338B2 (en) * | 2006-08-25 | 2012-11-28 | 東京エレクトロン株式会社 | Etching method and etching apparatus |
| US9275869B2 (en) * | 2013-08-02 | 2016-03-01 | Lam Research Corporation | Fast-gas switching for etching |
| JP6805088B2 (en) * | 2017-06-15 | 2020-12-23 | 日本電信電話株式会社 | Optical waveguide and its manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105390368A (en) * | 2014-09-09 | 2016-03-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer precleaning cavity and semiconductor processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006147633A (en) | 2006-06-08 |
| JP4615290B2 (en) | 2011-01-19 |
| CN1790628A (en) | 2006-06-21 |
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