CN100409064C - Resonance assembly, double-shaft assembly and method for manufacturing double-shaft assembly and micro-system assembly - Google Patents
Resonance assembly, double-shaft assembly and method for manufacturing double-shaft assembly and micro-system assembly Download PDFInfo
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- CN100409064C CN100409064C CNB2004100716319A CN200410071631A CN100409064C CN 100409064 C CN100409064 C CN 100409064C CN B2004100716319 A CNB2004100716319 A CN B2004100716319A CN 200410071631 A CN200410071631 A CN 200410071631A CN 100409064 C CN100409064 C CN 100409064C
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- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 238000009940 knitting Methods 0.000 claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 11
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 8
- 230000005674 electromagnetic induction Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 abstract description 3
- 238000013016 damping Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000009411 base construction Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
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Abstract
The present invention relates to a resonant assembly and a biaxial assembly, and a method for manufacturing the biaxial assembly and a micro-system assembly. The biaxial assembly comprises a first substrate with a plurality of electrodes, a first joining layer positioned on the first substrate, an action layer which is provided with a ring part, an actuating part, a first rotating shaft and a second rotating shaft and is connected with the first substrate through the first jointing layer, a second joining layer connected with the action layer, and a protective cover which is connected with the action layer through the second joining layer, wherein the first substrate, the first joining layer, the action layer, the second joining layer and the protective cover together form a vacuum cavity; the actuating part and the first rotating shaft are positioned in the vacuum cavity; the second rotating shaft extends out of the vacuum cavity.
Description
Technical field
The present invention relates to structure of a kind of micromodule and preparation method thereof, refer to a kind of resonance assembly and double-shaft assembly especially, make the method for double-shaft assembly and microsystem assembly.
Background technology
Assembly with twin shaft has been applied among traditional industry or the micro electronmechanical field, for example among bar code device, laser printer, display and light change-over switch or the like field.Yet, because being positioned under the akin environment, the diaxon of traditional double-shaft assembly (for example is in environment) with akin air damping (damping), sensing susceptibility and degree of accuracy that it had are restricted.
For instance, with regard to a little torsional surface mirror of twin shaft that is applied in the display, its first is carried out line sweep in order to quick high frequency to object, sweep frequency and angle are high more, gained result's degree of accuracy and resolution are high more, wherein the size of scanning angle is relevant with the quality factor (quality factor) of assembly, quality factor is high more, its scanning angle is big more, and air damping (damping) will be to cause the principal element of little mirror quality factor height, little torsional surface mirror is operated under the vacuum environment, can effectively reduce air damping and the improve the quality factor and scanning angle, to obtain the high resolving power performance.Second of little torsional surface mirror then is and first quadrature, carry out the scanning of low frequency at a slow speed, its purpose is first result who obtains that scans, be extended for the face scanning of a two dimension, second scanning need be carried out accurate angle control, suitable air damping exists, the degree of accuracy that will help little torsional surface mirror angle control, just can obtain preferable screen resolution, therefore second its only need maintain under the atmospheric environment, can meet the required requirement of general display, if under identical air damping, operate with first, on the contrary can uncontrollable second angle orientation, cause float to influence resolution.Therefore, air damping is one of the decision assembly quality factor and scanning resolution principal element just, first needs low latitude vapour lock Buddhist nun (high quality factor), second then needs high air damping (low quality factors), therefore, if pass through the air capacity of the diaxon environment of living in of control double-shaft assembly, first rotating shaft is operated under the vacuum environment, and second rotating shaft operates under the general atmosphere environment, so just can effectively promote the degree of accuracy and the resolution of double-shaft assembly.
At present, because constantly promote for the measurement degree of accuracy of instrument and the requirement of resolution, therefore, existing double-shaft assembly satisfy to use and need have the more double-shaft assembly of pinpoint accuracy and resolution.Particularly in the technology of present associated component, way does not provide two kinds of simultaneous operating environments of damping simultaneously.
Summary of the invention
Given this, the present invention proposes a kind of diaxon and is in double-shaft assembly of the different quality factor and preparation method thereof; It finishes the double-shaft assembly that a kind of diaxon is positioned at the environment of the different quality factor under the condition of using change prior art and equipment.
Main conception of the present invention is to provide a kind of double-shaft assembly, and it has: one first substrate has several electrodes; One first knitting layer is positioned on this first substrate; One start layer has a ring portion, an actuation part, one first rotating shaft and one second rotating shaft, links to each other with this first substrate via this first knitting layer; One second knitting layer links to each other with this start layer; And an over cap, link to each other with this start layer via this second knitting layer.Wherein this first substrate, this first knitting layer, this start layer, this second knitting layer and this over cap are formed a vacuum cavity altogether, and this actuation part and this first rotating shaft are positioned among this vacuum cavity, and this second rotating shaft extends to outside this vacuum cavity.
According to above-mentioned conception, wherein these several electrodes comprise positive electrode and negative electrode.
According to above-mentioned conception, wherein these several electrodes are metal electrode or polysilicon electrode.
According to above-mentioned conception, wherein this first substrate is one first insulated substrate.
According to above-mentioned conception, wherein this first substrate is a silicon substrate.
According to above-mentioned conception, wherein this start layer is made up of silicon or silicon-containing compound.
According to above-mentioned conception, wherein this over cap is a second insulated substrate.
According to above-mentioned conception, wherein this second insulated substrate is a glass substrate.
According to above-mentioned conception, wherein this second insulated substrate is a quartz base plate.
According to above-mentioned conception, wherein this over cap is a transparency carrier.
According to above-mentioned conception, wherein this first knitting layer comprises a first metal layer.
According to above-mentioned conception, wherein this first knitting layer comprises one first electromagnetic induction thing layer.
According to above-mentioned conception, wherein this second knitting layer comprises one second metal level.
According to above-mentioned conception, wherein this second knitting layer comprises one second electromagnetic induction thing layer.
Another conception of the present invention is to provide a kind of double-shaft assembly, and it has: one by several substrates, a support sector and a vacuum cavity that at least one knitting layer was together to form; And an Actuator Division, being positioned among this vacuum cavity, it comprises this support sector, a moving part, one first rotating shaft and one second rotating shaft.Wherein this first rotating shaft and this second rotating shaft are two rotating shafts of this moving part, and this first rotating shaft is among this vacuum cavity, and this second rotating shaft extends to outside this vacuum cavity.
According to above-mentioned conception, wherein one of these several substrates comprise several electrodes.
According to above-mentioned conception, wherein these several electrodes comprise positive electrode and negative electrode.
According to above-mentioned conception, wherein these several electrodes are metal electrode or polysilicon electrode.
According to above-mentioned conception, wherein these several substrates are an insulated substrate.
According to above-mentioned conception, wherein one of these several substrates are a transparency carrier.
According to above-mentioned conception, wherein this Actuator Division is formed by silicon or silicon-containing compound.
According to above-mentioned conception, wherein this knitting layer comprises a metal level.
According to above-mentioned conception, wherein this first knitting layer comprises an electromagnetic induction thing layer.
Another conception of the present invention promptly is a kind of resonance assembly is provided, and comprises:
One activates a device and a double-shaft assembly.Wherein this double-shaft assembly comprises a vacuum cavity of being made up of several substrates and at least one knitting layer, and a twin shaft actuating assembly; This dual axial actuation assembly is among this vacuum cavity, and has one first rotating shaft and one second rotating shaft, and wherein this first is among this vacuum cavity, and this second rotating shaft extends to outside this vacuum cavity.
Another conception of the present invention is to provide a kind of method of making double-shaft assembly.This method comprises step: one first substrate and one second substrate (a) are provided; (b) form several electrodes on this first substrate; (c) form one first knitting layer in this first substrate; (d) this first substrate of etching is to define a profile and one first pedestal; (e) this second substrate of etching goes out to have an actuating structure and one second pedestal of one first rotating shaft and one second rotating shaft with one patterned; (f) form one second knitting layer in this second substrate; (g) engage a protection and be placed on this second knitting layer, so that this over cap hides this second substrate; (h) remove this second pedestal; (i) in vacuum, engage this first knitting layer and this actuating structure; Wherein this first substrate, this first knitting layer, this actuating structure, this second knitting layer and this over cap are formed a vacuum cavity altogether, and this first rotating shaft is positioned among this vacuum cavity, and this second rotating shaft extends to outside this vacuum cavity; And (j) remove this first pedestal.
According to above-mentioned conception, wherein this first substrate and this second substrate are a Silicon-On-Insulator (Silicon onInsulator, SOI) wafer.
According to above-mentioned conception, wherein these several electrodes are metal electrode.
According to above-mentioned conception, wherein these several electrodes are polysilicon electrode.
According to above-mentioned conception, wherein this step (d) is implemented via a dry ecthing mode.
According to above-mentioned conception, wherein this step (e) is implemented via a dry ecthing mode.
According to above-mentioned conception, wherein this over cap is a transparency carrier.
According to above-mentioned conception, wherein this over cap is a glass substrate or a silicon substrate.
According to above-mentioned conception, wherein this over cap is an insulated substrate.
According to above-mentioned conception, wherein this step (h) is implemented via an etching mode.
According to above-mentioned conception, wherein this step (j) is implemented via an etching mode.
Another conception of the present invention is to provide a kind of method of making microsystem assembly.This method comprises step: several substrates (a) are provided; (b) these several substrates of etching to be forming a upper substrate, an infrabasal plate, and a double-shaft assembly with one first rotating shaft and one second rotating shaft; (c) engage these several substrates and this double-shaft assembly to form a microsystem assembly, wherein this microsystem assembly comprises a vacuum cavity, and this double-shaft assembly and this first rotating shaft are positioned among this vacuum cavity, and this second rotating shaft extends to outside this vacuum cavity.
According to above-mentioned conception, wherein these several substrates comprise a Silicon-On-Insulator (SOI) wafer.
According to above-mentioned conception, wherein these several substrates comprise a transparency carrier.
According to above-mentioned conception, wherein this step (c) is implemented via a grafting material.
According to above-mentioned conception, wherein this grafting material is a metal.
According to above-mentioned conception, wherein this grafting material is a polymkeric substance.
Description of drawings
Fig. 1 is according to the little torsional surface mirror of twin shaft of the present invention perspective diagram.
Fig. 2 is the schematic cross-section of the line segment A-A ' gained in Fig. 1.
Fig. 3 (A)-Fig. 3 (C) is the exemplary making process flow diagram of the base construction of the little torsional surface mirror of twin shaft of the present invention.
Fig. 4 (A)-Fig. 4 (E) is the exemplary making process flow diagram of the top structure of the little torsional surface mirror of twin shaft of the present invention.
Fig. 5 (A)-Fig. 5 (C) is the base construction of the little torsional surface mirror of twin shaft of the present invention and the synoptic diagram that engages of top structure.
Wherein, description of reference numerals is as follows:
M: the little torsional surface mirror of twin shaft S
1: base construction
S
2: top structure V: vacuum cavity
1: 11: the first silicon substrates of silicon substrate
111: positive electrode 112: negative electrode
2: the second silicon substrates of 113: the first knitting layers
Rotating shaft in 21: the first rotating shaft in 22: the second
23: actuation part 24: ring portion
Knitting layer 26 in 25: the second: lead
3: over cap
Embodiment
Double-shaft assembly proposed by the invention and preparation method thereof can fully be understood by following embodiment explanation, and make those skilled in the art to finish according to this.In addition, though the present invention is to be embodiment to make the little torsional surface mirror of twin shaft, yet enforcement of the present invention is not limited to the making field of the little torsional surface mirror of twin shaft, and should also be applicable to the making of other double-shaft assembly.
Please refer to Fig. 1, be the little torsional surface mirror of the prepared twin shaft of the present invention perspective diagram.Briefly, by in the skeleton view shown in Figure 1 as can be known twin shaft torsional micro-mirror face M comprise first silicon substrate 11, first rotating shaft 21, second rotating shaft 22, actuation part 23, ring portion 24 and vacuum cavity V.
Please refer to Fig. 2, be the schematic cross-section of the line segment A-A ' gained in Fig. 1.Cross section as shown in Figure 2, the little torsional surface mirror of twin shaft M has first silicon substrate 11, first knitting layer 113, positive electrode 111, negative electrode 112, actuation part 23, second rotating shaft 22, second knitting layer 25, ring portion 24, an over cap 3 and a vacuum cavity V.
Please refer to Fig. 2 and Fig. 3 (A)-Fig. 3 (C), wherein Fig. 3 (A)-Fig. 3 (C) is the exemplary making process flow diagram of the base construction of the little torsional surface mirror of twin shaft of the present invention.Shown in Fig. 3 (A)-Fig. 3 (C), when making, provide a silicon substrate (present embodiment with a SOI wafer as silicon substrate) 1 earlier, shown in Fig. 3 (A); Then on this silicon substrate 1, form positive electrode 111, negative electrode 112 and first knitting layer 113 (generally utilizing metallics or polymeric material or electromagnetic induction thing layer) again, shown in Fig. 3 (B) as mating substance more; Then be to come etching silicon substrate 1 to advance at last to form the base construction S shown in Fig. 3 (C) by dry ecthing
1
Please refer to Fig. 1, Fig. 2 and Fig. 4 (A)-Fig. 4 (E), wherein Fig. 4 (A)-Fig. 4 (E) is the exemplary making process flow diagram of the top structure of the little torsional surface mirror of twin shaft of the present invention.Shown in Fig. 4 (A)-Fig. 4 (E), when making, provide one second silicon substrate 2 (for example also with a SOI wafer as second silicon substrate) earlier, shown in Fig. 4 (A).Then then utilize dry ecthing draw second rotating shaft 22, actuation part 23 and ring portion 24, shown in Fig. 4 (B); In addition, in fact also utilize dry ecthing on second silicon substrate 2, to form first rotating shaft 21 (because with regard to the cross section of the line segment A-A ' of Fig. 1, first rotating shaft 21 will activated portion 23 and cover).Then be on second silicon substrate 2 after the portrayal, to form second knitting layer 25 after a while, shown in Fig. 4 (C).Secondly then be on second knitting layer 25, to form a transparent protective cover 3 (for example Jue Yuan glass substrate or quartz base plate), shown in Fig. 4 (D).Last then be that lower surface from second silicon substrate 2 begins to be etched with the top structure S that forms shown in Fig. 4 (E)
2
Please refer to Fig. 2 to Fig. 5 (A)-Fig. 5 (C), wherein Fig. 5 (A)-Fig. 5 (C) is the base construction of the little torsional surface mirror of twin shaft of the present invention and the synoptic diagram that engages of top structure.Earlier under vacuum environment with the base construction S shown in Fig. 3 (C)
1With the top structure S shown in Fig. 4 (E)
2Engage to form a vacuum cavity V, its result is shown in Fig. 5 (A).Then be that over cap 3 is cut into the shape of being desired on demand then, shown in Fig. 5 (B).Last then be to begin to carry out etching from the bottom of silicon substrate 1, until making silicon substrate 1 form the first silica-based version 11, shown in Fig. 5 (C).In addition, when needs, can be in second rotating shaft 22 framework lead 26 so that utilize the magnetic effect of electric current to change the motion state of second rotating shaft 22; And the motion state of first rotating shaft 21 can be controlled by the positive electrode 111 and the electrostatic force of negative electrode 112.
By the content shown in Fig. 1, Fig. 2 and Fig. 5 (C) as can be known; first rotating shaft 21 of the little torsional surface mirror of the formed twin shaft of the present invention M will be positioned among the vacuum cavity V that is made up of first silicon substrate 11, first knitting layer 113, second knitting layer 25, over cap 3 and ring portion 24, and its second rotating shaft 22 then is to be among the general atmosphere environment.Therefore, as shown in the above the present invention realized really a kind of two rotating shafts be arranged in double-shaft assembly under the different quality factor environment (its one of rotating shaft be arranged in high quality factor environment (vacuum), another rotating shaft then is arranged in a low quality factors environment (general atmosphere)).Though the present invention is described in detail by the above embodiments, and can by done at this field tool Chang Shizhe all as modify neither scope of taking off as the desire protection of claims institute.
Claims (11)
1. double-shaft assembly, it has:
One first substrate has several electrodes;
One first knitting layer is positioned on this first substrate;
One start layer has a ring portion, an actuation part, one first rotating shaft and one second rotating shaft, links to each other with this first substrate via this first knitting layer;
One second knitting layer links to each other with this start layer; And
One over cap links to each other with this start layer via this second knitting layer;
Wherein this first substrate, this first knitting layer, this start layer, this second knitting layer and this over cap are formed a vacuum cavity altogether, and this actuation part and this first rotating shaft are positioned among this vacuum cavity, and this second rotating shaft extends to outside this vacuum cavity.
2. double-shaft assembly as claimed in claim 1, wherein:
These several electrodes comprise positive electrode and negative electrode;
These several electrodes are metal electrode or polysilicon electrode; And
This first substrate is one first insulated substrate.
3. double-shaft assembly as claimed in claim 1, wherein:
This start layer is made up of silicon or silicon-containing compound;
This over cap is a second insulated substrate; And
This second insulated substrate is a transparency carrier or a quartz base plate.
4. double-shaft assembly as claimed in claim 1, wherein:
This first knitting layer comprises a first metal layer or one first electromagnetic induction thing layer; And/or
This second knitting layer comprises one second metal level or one second electromagnetic induction thing layer.
5. double-shaft assembly, it has:
One by several substrates, a support sector and a vacuum cavity that at least one knitting layer was together to form; And
One Actuator Division is positioned among this vacuum cavity, comprises this support sector, a moving part, one first rotating shaft and one second rotating shaft,
Wherein this first rotating shaft and this second rotating shaft are two rotating shafts of this moving part, and this first rotating shaft is among this vacuum cavity, and this second rotating shaft extends to outside this vacuum cavity.
6. double-shaft assembly as claimed in claim 5, wherein:
One of these several substrates comprise several electrodes; And/or
One of these several substrates are a transparency carrier.
7. resonance assembly, it comprises:
One activates device; And
One double-shaft assembly,
Wherein this double-shaft assembly comprises a vacuum cavity of being made up of several substrates and at least one knitting layer, and a twin shaft actuating assembly; This dual axial actuation assembly is among this vacuum cavity, and has one first rotating shaft and one second rotating shaft, and wherein this first is among this vacuum cavity, and this second rotating shaft extends to outside this vacuum cavity.
8. method of making double-shaft assembly comprises step:
(a) provide one first substrate and one second substrate;
(b) form several electrodes on this first substrate;
(c) form one first knitting layer in this first substrate;
(d) this first substrate of etching is to define a profile and one first pedestal;
(e) this second substrate of etching goes out to have an actuating structure and one second pedestal of one first rotating shaft and one second rotating shaft with one patterned;
(f) form one second knitting layer in this second substrate;
(g) engage a protection and be placed on this second knitting layer, so that this over cap hides this second substrate;
(h) remove this second pedestal;
(i) in vacuum, engage this first knitting layer and this actuating structure; Wherein this first substrate, this first knitting layer, this actuating structure, this second knitting layer and this over cap are formed a vacuum cavity altogether, and this first rotating shaft is positioned among this vacuum cavity, and this second rotating shaft extends to outside this vacuum cavity; And
(j) remove this first pedestal.
9. method as claimed in claim 8, wherein:
This first substrate and this second substrate are a Silicon-On-Insulator wafer;
This step (d) is implemented via a dry ecthing mode;
This step (e) is implemented via a dry ecthing mode;
This over cap is a glass substrate or a silicon substrate;
This over cap is an insulated substrate;
This step (h) is implemented via an etching mode; And
This step (j) is implemented via an etching mode.
10. method of making microsystem assembly comprises following steps:
(a) provide several substrates;
(b) these several substrates of etching to be forming a upper substrate, an infrabasal plate, and a double-shaft assembly with one first rotating shaft and one second rotating shaft;
(c) engage these several substrates and this double-shaft assembly to form a microsystem assembly, wherein this microsystem assembly comprises a vacuum cavity, and this double-shaft assembly and this first rotating shaft are positioned among this vacuum cavity, and this second rotating shaft extends to outside this vacuum cavity.
11. method as claimed in claim 10, wherein:
These several substrates comprise a Silicon-On-Insulator wafer;
These several substrates comprise a transparency carrier;
This step (c) is implemented via a grafting material; And
This grafting material is a metal or a polymkeric substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100716319A CN100409064C (en) | 2004-07-16 | 2004-07-16 | Resonance assembly, double-shaft assembly and method for manufacturing double-shaft assembly and micro-system assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100716319A CN100409064C (en) | 2004-07-16 | 2004-07-16 | Resonance assembly, double-shaft assembly and method for manufacturing double-shaft assembly and micro-system assembly |
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| Publication Number | Publication Date |
|---|---|
| CN1721911A CN1721911A (en) | 2006-01-18 |
| CN100409064C true CN100409064C (en) | 2008-08-06 |
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| CNB2004100716319A Expired - Fee Related CN100409064C (en) | 2004-07-16 | 2004-07-16 | Resonance assembly, double-shaft assembly and method for manufacturing double-shaft assembly and micro-system assembly |
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| DE102008012810B4 (en) | 2007-04-02 | 2013-12-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Optical component with a structure to avoid reflections |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5629790A (en) * | 1993-10-18 | 1997-05-13 | Neukermans; Armand P. | Micromachined torsional scanner |
| US20020050744A1 (en) * | 2000-08-27 | 2002-05-02 | Jonathan Bernstein | Magnetically actuated micro-electro-mechanical apparatus and method of manufacture |
| US20020149072A1 (en) * | 2000-10-25 | 2002-10-17 | The Nippon Signal Co., Ltd. | Actuator |
| US6594059B2 (en) * | 2001-07-16 | 2003-07-15 | Axsun Technologies, Inc. | Tilt mirror fabry-perot filter system, fabrication process therefor, and method of operation thereof |
| CN1495465A (en) * | 2002-05-07 | 2004-05-12 | 德克萨斯仪器股份有限公司 | Laser printer deive with scanning mirror on pivot |
-
2004
- 2004-07-16 CN CNB2004100716319A patent/CN100409064C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5629790A (en) * | 1993-10-18 | 1997-05-13 | Neukermans; Armand P. | Micromachined torsional scanner |
| US20020050744A1 (en) * | 2000-08-27 | 2002-05-02 | Jonathan Bernstein | Magnetically actuated micro-electro-mechanical apparatus and method of manufacture |
| US20020149072A1 (en) * | 2000-10-25 | 2002-10-17 | The Nippon Signal Co., Ltd. | Actuator |
| US6594059B2 (en) * | 2001-07-16 | 2003-07-15 | Axsun Technologies, Inc. | Tilt mirror fabry-perot filter system, fabrication process therefor, and method of operation thereof |
| CN1495465A (en) * | 2002-05-07 | 2004-05-12 | 德克萨斯仪器股份有限公司 | Laser printer deive with scanning mirror on pivot |
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| Publication number | Publication date |
|---|---|
| CN1721911A (en) | 2006-01-18 |
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