CN100401471C - Plasma processing chamber, potential controlling apparatus, method, program and storage medium - Google Patents
Plasma processing chamber, potential controlling apparatus, method, program and storage medium Download PDFInfo
- Publication number
- CN100401471C CN100401471C CNB2006100826318A CN200610082631A CN100401471C CN 100401471 C CN100401471 C CN 100401471C CN B2006100826318 A CNB2006100826318 A CN B2006100826318A CN 200610082631 A CN200610082631 A CN 200610082631A CN 100401471 C CN100401471 C CN 100401471C
- Authority
- CN
- China
- Prior art keywords
- component parts
- potential
- process chamber
- chamber component
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention relates to a plasma processing chamber (10) which comprises a covered container (11), cylinder side wall component (45) inside the container, an electric potential control device (46) with conducting component (47) which can be contacted with the side wall component (45), or not be contacted with the side wall component (45) and be grounded via up and down. During the RIE process, the conducting component (47) is contacted with the side wall component (45) via lowering down, setting the electric potential of the side wall component (45) as grounding potential; during the ashing process, the conducting component (47) is not contacted with the side wall component (45) via rising up, setting the electric potential of the side wall component (45) as suspension joint electric potential.
Description
Technical field
The present invention relates to plasma processing chamber, potential controlling apparatus, potential control method, program and storage medium, particularly have the plasma processing chamber that is exposed to the component parts in the plasma.
Background technology
So far, possesses cylindrical container and be configured in this container and the plasma processing chamber of the electrode that is connected with high frequency electric source is well-known.In this plasma process chamber, will handle gas and import in the container, in the space in container electrode is applied high frequency power.In addition, in the time will being housed in the container as the semiconductor wafer of substrate, make the processing gas of importing become plasma, produce ion etc., semiconductor wafer is implemented plasma treatment, for example etching processing by this ion etc. by high frequency power.
In above-mentioned plasma processing chamber, when using for example C as the reactant gas of handling gas
4F
8During the mist of gas and argon (Ar) gas, the active group (radical) of the neutrality that generates from this reactant gas as polymer attached on the sidepiece inwall of container (below, be called " sidewall " simply).Under the too much situation of the adhesion amount of polymer, when semiconductor wafer is implemented plasma treatment, because this polymer peels off and as on the surface of deposition attached to semiconductor wafer from sidewall, so need remove polymer attached to sidewall.
Preferably handle the cation that produces when gas becomes plasma and sidewall collision and remove polymer attached to sidewall by making, cation to the collision number of sidewall be subjected to sidewall current potential (potential) about.Specifically, when the sidewall current potential low, sidewall with handle gas and become the potential difference in space of plasma when big, the collision number of cation oppose side wall increases, the adhesion amount of polymer reduces.
But, owing to the current potential of sidewall by be subjected to about electrode and sidewall shape anode/cathode than and the size decision of the high frequency power set for the plasma treatment result who obtains the expectation of semiconductor wafer, so the current potential of control sidewall is difficult.Therefore, the control of removing polymer is not easy, if polymer is attached on the sidewall, on the surface of semiconductor wafer, repeat the deposition process of easy adventitious deposit, then the adhesion amount of polymer is excessive, so need to improve the cleaning frequency of sidewall, the result, the operating efficiency of plasma processing chamber reduces.
Therefore, in recent years, developing the current potential of controlling sidewall, the process chamber of removing the polymer of sidewall energetically, for example, when the operating time reaches setting, optionally make sidewall ground connection or be connected, when the polymer removed attached to sidewall with high frequency electric source, sidewall is connected with high frequency electric source, the current potential of sidewall is a negative potential, thus, makes cation collide sidewall, remove the process chamber (for example, with reference to patent documentation 1) of the polymer of sidewall.
[patent documentation 1] Japanese patent laid-open 1-231322 communique
But the process chamber of patent documentation 1 exists owing to except that the high frequency electric source that electrode is used, the high frequency electric source that also needs sidewall to use, that is, and the high frequency electric source that the process chamber component parts beyond the electrode is used, complicated problems so the formation of process chamber becomes.
In addition, the process chamber of patent documentation 1 is when the operating time reaches predetermined value, owing to sidewall is connected with high frequency electric source, only removes the polymer of sidewall, so be difficult to control the adhesion amount of polymer, as a result, in a plasma processing chamber, when repeating above-mentioned deposition process and using O
2Gas is as handling gas, do not generate neutral active group, non-cohesive polymer on the sidewall, on the surface of semiconductor wafer during non-cohesive sedimental no deposition process, if remove the polymer of sidewall fully, then also exist cation and directly collide the sidewall that does not have polymer, make sidewall consumption, as a result, the problem of the operating efficiency of plasma processing chamber reduction.
Summary of the invention
The object of the present invention is to provide plasma processing chamber, potential controlling apparatus, potential control method, program and the storage medium that easily to control the adhesion amount of polymer with simple formation.
In order to achieve the above object, inventive aspect 1 described plasma processing chamber, in possessing the container of accommodating substrate and being configured in this container and the electrode that is connected with high frequency electric source, make the processing gas that imports in the said vesse become plasma, and can implement the plasma treatment of dual mode at least to aforesaid substrate, it is characterized in that having: be configured in the said vesse and be exposed to process chamber component parts in the above-mentioned plasma; Respectively according to the plasma treatment of above-mentioned dual mode at least, with the potential setting of this process chamber component parts is any potential controlling apparatus in suspension joint current potential and the earthing potential, the plasma treatment of above-mentioned dual mode at least be the deposition process of adhering to attachment on the above-mentioned process chamber component parts and on above-mentioned process chamber component parts the no deposition process of non-cohesive attachment, above-mentioned potential controlling apparatus is an earthing potential with the potential setting of above-mentioned process chamber component parts in deposition process, and the potential setting with above-mentioned process chamber component parts in no deposition process is the suspension joint current potential.
Inventive aspect 3 described plasma processing chambers are characterised in that in inventive aspect 2 described plasma processing chambers, above-mentioned process chamber component parts has the concavity hole, and above-mentioned component parts contact member has and the free chimeric convex shaped part in above-mentioned concavity hole.
Inventive aspect 4 described plasma processing chambers are characterised in that in inventive aspect 3 described plasma processing chambers, above-mentioned concavity hole has narrow part, and at least one in this narrow part and the above-mentioned convex shaped part is made of elastomeric material.
Inventive aspect 5 described plasma processing chambers are characterised in that, in inventive aspect 3 or 4 described plasma processing chambers, the cylindrical shape of said vesse, above-mentioned process chamber component parts is the cylindrical structural member that covers the inner peripheral surface of said vesse, circumference along above-mentioned cylindrical structural member disposes a plurality of above-mentioned concavities hole, and the convex shaped part of a plurality of above-mentioned component parts contact members and above-mentioned a plurality of concavities hole are free respectively chimeric.
Inventive aspect 6 described plasma processing chambers are characterised in that, in inventive aspect 2 described plasma processing chambers, the cylindrical shape of said vesse, above-mentioned process chamber component parts is the cylindrical structural member that covers the inner peripheral surface of said vesse, above-mentioned cylindrical structural member has the ditch that forms along the circumference of this cylindrical structural member in the end, above-mentioned component parts contact component is mesh shape, and is chimeric with above-mentioned ditch freedom.
Inventive aspect 7 described plasma processing chambers are characterised in that, in inventive aspect 1 described plasma processing chamber, and above-mentioned process chamber component parts electricity suspension joint, above-mentioned potential controlling apparatus has the earth connection that makes above-mentioned process chamber component parts ground connection; With in the way that is configured in this earth connection and switch the cut-out of above-mentioned earth connection and the switching device shifter that is connected.
Inventive aspect 9 described plasma processing chambers are characterised in that, in inventive aspect 8 described plasma processing chambers, above-mentioned variable resistor element is according to attached to the quantitative change of the attachment on above-mentioned process chamber component parts resistance more.
In order to achieve the above object, inventive aspect 12 described potential controlling apparatus, it is characterized in that: in possessing the container of accommodating substrate and being configured in this container and the electrode that is connected with high frequency electric source, it is configured in and makes the processing gas that imports in the said vesse become plasma, and can implement in the said vesse of the plasma processing chamber of the plasma treatment of dual mode at least aforesaid substrate, and respectively according to the plasma treatment of above-mentioned dual mode at least, with the potential setting that is exposed to the process chamber component parts in the above-mentioned plasma is in suspension joint current potential and the earthing potential any, the plasma treatment of above-mentioned dual mode at least be the deposition process of adhering to attachment on the above-mentioned process chamber component parts and on above-mentioned process chamber component parts the no deposition process of non-cohesive attachment, potential setting with above-mentioned process chamber component parts in deposition process is an earthing potential, and the potential setting with above-mentioned process chamber component parts in no deposition process is the suspension joint current potential.
In order to achieve the above object, inventive aspect 15 described potential control methods, the process chamber component parts that is exposed in the above-mentioned plasma is carried out control of Electric potentials, in wherein potential controlling apparatus possesses the container of accommodating substrate and is configured in this container and the electrode that is connected with high frequency electric source, it is configured in and makes the processing gas that imports in the said vesse become plasma, and can implement in the said vesse of the plasma processing chamber of the plasma treatment of dual mode at least aforesaid substrate, it is characterized in that, have: respectively according to the plasma treatment of above-mentioned dual mode at least, with the potential setting of above-mentioned process chamber component parts is any potential setting step in suspension joint current potential and the earthing potential, the plasma treatment of above-mentioned dual mode at least be the deposition process of adhering to attachment on the above-mentioned process chamber component parts and on above-mentioned process chamber component parts the no deposition process of non-cohesive attachment, above-mentioned potential setting step is an earthing potential with the potential setting of above-mentioned process chamber component parts in deposition process, and the potential setting with above-mentioned process chamber component parts in no deposition process is the suspension joint current potential.
In order to achieve the above object, inventive aspect 16 described programs, make computer carry out the potential control method that the current potential that is exposed to the process chamber component parts in the above-mentioned plasma is controlled, in wherein potential controlling apparatus possesses the container of accommodating substrate and is configured in this container and the electrode that is connected with high frequency electric source, it is configured in and makes the processing gas that imports in the said vesse become plasma, and can implement in the said vesse of the plasma processing chamber of the plasma treatment of dual mode at least aforesaid substrate, it is characterized in that, have:, be any potential setting module in suspension joint current potential and the earthing potential the potential setting of above-mentioned process chamber component parts respectively according to the plasma treatment of above-mentioned dual mode at least.
In order to achieve the above object, inventive aspect 17 described storage mediums, it is the storage medium of embodied on computer readable, store and make computer carry out the program of the potential control method that the current potential that is exposed to the process chamber component parts in the above-mentioned plasma is controlled, in wherein potential controlling apparatus possesses the container of accommodating substrate and is configured in this container and the electrode that is connected with high frequency electric source, it is configured in and makes the processing gas that imports in the said vesse become plasma, and can implement in the said vesse of the plasma processing chamber of the plasma treatment of dual mode at least aforesaid substrate, it is characterized in that, said procedure has: respectively according to the plasma treatment of above-mentioned dual mode at least, be any potential setting module in suspension joint current potential and the earthing potential with the potential setting of above-mentioned process chamber component parts.
According to inventive aspect 1 described plasma processing chamber, inventive aspect 12 described potential controlling apparatus, inventive aspect 15 described potential control methods, inventive aspect 16 described programs and inventive aspect 17 described storage mediums, because the potential setting that will be configured in the container according to the plasma treatment of dual mode at least respectively and be exposed to the process chamber component parts in the plasma is in suspension joint current potential and the earthing potential any, so high frequency electric source that unwanted process chamber component parts is used, and can be according to the adhesion amount of each plasma treatment control towards the attachment of process chamber component parts, thereby, can easily control the adhesion amount of attachment with simple formation.
In addition, according to inventive aspect 1 described plasma processing chamber, according to inventive aspect 12 described potential controlling apparatus with according to inventive aspect 15 described potential control methods, at least the plasma treatment of dual mode be the deposition process of adhering to attachment on the process chamber component parts and on the process chamber component parts the no deposition process of non-cohesive attachment, potential setting with the process chamber component parts in deposition process is an earthing potential, potential setting with the process chamber component parts in no deposition process is the suspension joint current potential, so can prevent in deposition process that the superfluous ground of attachment is attached on the process chamber component parts, simultaneously can in no deposition process, prevent the consumption of process chamber component parts, thereby, can prevent that the operating efficiency of plasma processing chamber from reducing.
According to inventive aspect 2 described plasma processing chambers and inventive aspect 15 described potential controlling apparatus, because process chamber component parts electricity suspension joint, component parts contact member electrical ground freely contacts with the process chamber component parts, so can be positively the current potential of process chamber component parts be switched to suspension joint current potential or earthing potential.
According to inventive aspect 3 described plasma processing chambers, because the process chamber component parts has the concavity hole, the component parts contact member has and the free chimeric convex shaped part in concavity hole, so can the current potential of process chamber component parts be switched to suspension joint current potential or earthing potential with simple structure ground.
According to inventive aspect 4 described plasma processing chambers, because the concavity hole of process chamber component parts has narrow part, in the male member of this narrow part and component parts contact component at least one is made of elastomeric material, so can positively carry out contacting of process chamber component parts and component parts contact member.
According to inventive aspect 5 described plasma processing chambers, the cylindrical shape of container, the process chamber component parts is the cylinder-like part of the inner peripheral surface of covering container, because the circumference along cylinder-like part disposes a plurality of concavities hole, the convex shaped part of a plurality of component parts contact members and a plurality of concavities hole are free respectively chimeric, so when the process chamber component parts contacts with the component parts contact member, can prevent that the current potential in the process chamber component parts from departing from, can control the adhesion amount of attachment equably.
According to inventive aspect 6 described plasma processing chambers, the cylindrical shape of container, the process chamber component parts is the cylinder-like part of the inner peripheral surface of covering container, because cylinder-like part has the ditch that forms along the circumference of this cylinder-like part in the end, the component parts contact member is mesh shape, chimeric with the ditch freedom, so when the process chamber component parts contacts with the component parts contact member, can prevent positively that the current potential in the process chamber component parts from departing from, can control the adhesion amount of attachment more equably.
According to inventive aspect 7 described plasma processing chambers and inventive aspect 14 described potential controlling apparatus, because process chamber component parts electricity suspension joint, potential controlling apparatus has in earth connection that makes process chamber component parts ground connection and the way that is configured in this earth connection and switches the cut-out of earth connection and the switching device shifter that is connected, so can the current potential of process chamber component parts be switched to suspension joint current potential or earthing potential with simple structure.
According to inventive aspect 8 described plasma processing chambers, because potential controlling apparatus has the variable resistor element in the way that is configured in earth connection, so the pace of change of current potential that can control and treatment chamber component parts, thereby, the adhesion amount of attachment can be controlled more meticulously.
According to inventive aspect 9 described plasma processing chambers, because variable resistor element is according to attached to the quantitative change of the attachment on process chamber component parts resistance more, so can be according to the current potential of the amount control and treatment chamber component parts of attachment, thereby, can control the adhesion amount of attachment more meticulously.
According to inventive aspect 10 described plasma processing chambers, because the Frequency Synchronization of variable resistor element and high frequency electric source ground change resistance, so can suppress the change of the adhesion amount of the attachment in the plasma treatment.
According to inventive aspect 11 described plasma processing chambers, because variable resistor element is variable inductance or variable capacitance, so can control the adhesion amount of attachment more meticulously with simpler formation.
Description of drawings
Fig. 1 is the profile that the summary of the plasma processing chamber of expression first execution mode of the present invention constitutes.
Fig. 2 is used for the contacting of the conducting member of key diagram 1 and side wall member, discontiguous schematic diagram.
Fig. 3 is the schematic diagram that is used for the chimerism of the front end of conducting member of key diagram 2 and conducting member accepting hole, (A) be the schematic diagram of the front end of expression conducting member and the conducting member accepting hole state before chimeric, the schematic diagram of the state when (B) being the front end of expression conducting member and conducting member accepting hole chimeric.
Fig. 4 is the chart of the deposition rate of the component parts in the existing plasma processing chamber of expression, (A) is the chart of the deposition rate of expression suspension joint parts, (B) is the chart of the deposition rate of expression grounded parts.
Fig. 5 is the chart of the potential difference in component parts in the existing plasma processing chamber of expression and the space that produces plasma.
Fig. 6 is used for the contacting of chimeric member in the variation of key diagram 1 potential controlling apparatus and side wall member, discontiguous schematic diagram.
Fig. 7 is the profile that the summary of the plasma processing chamber of expression second execution mode of the present invention constitutes.
Symbol description
The W wafer
10,70 plasma processing chambers
11 containers
12 pedestals
The high frequency electric source that 20 lower electrodes are used
34 gases import spray head
The high frequency electric source that 36 upper electrodes are used
38 top electrode plate
45 side wall member
46,71 potential controlling apparatus
47 conducting members
48 guide bar
49 base portions
50 lifting units
51 ends
52 conducting member accepting holes
The 52a narrow part
53 ditches
54a, 54b ring
55 coupling members
56 chimeric members
72 earth connections
73 switches
Embodiment
Below, with reference to the description of drawings embodiments of the present invention.
The plasma processing chamber of first execution mode of the present invention at first, is described.
Fig. 1 is the profile that the summary of the plasma processing chamber of expression present embodiment constitutes.This plasma process chamber is so that (reactive ion etching: Reactive Ion Etching) mode of processing and ashing treatment constitutes to implementing RIE as the semiconductor wafer W of substrate.
Among Fig. 1, plasma processing chamber 10 has the container 11 of drum, in this container 11, disposes the columned pedestal 12 of the mounting table of semiconductor wafer W as mounting diameter 300mm (below, be called " wafer W " simply).
In plasma processing chamber 10, the side of madial wall and pedestal 12 by container 11 is formed with as the exhaust pathway 13 that the gas molecule of pedestal 12 tops is discharged to the stream outside the container 11.In the way of this exhaust pathway 13, dispose the annular baffle 14 that prevents that plasma from leaking.In addition, compare the space in downstream with the dividing plate 14 in the exhaust pathway 13 and return the below that enters pedestal 12, with as the automatic pressure control valve (AutomaticPressure Control Valve) of type variable butterfly valve (below, be called " APC valve ".) 15 connections.APC valve 15 across isolator (Isolator) 16 with as the turbomolecular pump (TurboMolecular Pump) that vacuumizes the exhaust pump of usefulness (below, be called " TMP ".) 17 connect, TMP17 across valve V1 with as the dry pump of exhaust pump (below, be called " DP ".) 18 connections.The exhaust flow path that constitutes by APC valve 15, isolator 16, TMP17, valve V1 and DP18 (below, be called " main exhaust line ".) by the pressure in the APC valve 15 control containers 11, further the pressure in the container 11 is reduced to the substantial vacuum state by TMP17 and DP18.
In addition, pipe arrangement 19 is connected with DP18 across valve V2 between isolator 16 and the TMP17.Pipe arrangement 19 and valve V2 (below, be called " bypass line "), with TMP17 as bypass, by DP18 to slightly vacuumizing in the container 11.
The high frequency electric source 20 that lower electrode is used is connected with pedestal 12 with adaptation (Matcher) 22 across feeder rod used therein 21, and the high frequency electric source 20 that this lower electrode is used is supplied with the high frequency power of regulation to pedestal 12.Thus, pedestal 12 is as lower electrode.In addition, adaptation 22 reduces the reflection from the high frequency power of pedestal 12, makes most effective to pedestal 12 supply high frequency power.
In the inner and upper of pedestal 12, dispose the discoideus ESC battery lead plate 23 that constitutes by conducting film.DC power supply 24 is electrically connected with ESC battery lead plate 23.Wafer W is adsorbed the upper surface that remains on pedestal 12 by Coulomb force or Claes Johanson Marek Lbik (Johnsen-Rahbek) power that the direct voltage that is applied to ESC battery lead plate 23 from DC power supply 24 produces.In addition, above pedestal 12, set circular focusing ring 25 in the mode of the periphery of the wafer W of surrounding the upper surface that absorption remains on pedestal 12.This focusing ring 25 exposes in space S described later, makes plasma to the convergence of the surface of wafer W in this space S, has improved the efficient of RIE processing and ashing treatment.
In addition, in the inside of pedestal 12, for example, be provided with the ring-type refrigerant chamber 26 of along the circumferential direction extending.Across the refrigerant refrigerant of pipe arrangement 27 with set point of temperature, for example the cooling water circulation supplies to this refrigerant chamber 26 from cooling unit (not shown), remains on the treatment temperature of the wafer W of pedestal 12 upper surfaces by the temperature control absorption of this refrigerant.
Absorption keep the wafer W of pedestal 12 upper surfaces part (below, be called " adsorption plane ".) on have a plurality of heat-conducting gas supply holes 28.
These a plurality of peripheral heat-conducting gas supply holes 28 are connected with heat-conducting gas supply unit 32 across the heat-conducting gas supply line 30 that is configured in pedestal 12 inside, and this heat-conducting gas supply unit 32 will supply to the gap at the adsorption plane and the wafer W back side as the helium of heat-conducting gas across heat-conducting gas supply hole 28.
In addition, on the adsorption plane of pedestal 12, dispose a plurality of propelling pins 33 as the lifter pin of freely giving prominence to from the upper surface of pedestal 12.These advance pin 33 to be connected with ball screw (not shown) across motor (not shown), by be transformed into rotatablely moving of straight-line motor by ball screw, freely give prominence to from adsorption plane.When remaining on wafer W absorption on the adsorption plane for wafer W is implemented RIE processing and ashing treatment, to advance pin 33 to be housed on the pedestal 12, when will implement that RIE handles and the wafer W of ashing treatment when container 11 takes out of, advance pin 33 outstanding from the upper surface of pedestal 12, wafer W is left from pedestal 12, and promoted upward.
At the top of container 11, dispose gas in the mode relative and import spray head 34 with pedestal 12.The high frequency electric source 36 that upper electrode is used is connected across adaptation 35 and gas importing spray head 34, imports spray head 34 because the high frequency electric source 36 that upper electrode is used supplies to gas with the high frequency power of stipulating, is used as upper electrode so gas imports spray head 34.Wherein, the function of adaptation 35 is identical with the function of above-mentioned adaptation 22.
Gas imports spray head 34 and possesses top electrode plate 38 with a plurality of gas orifices 37 and the electrode support 39 of releasably supporting this top electrode plate 38.In addition, be provided with surge chamber 40, be connected with this surge chamber 40 from the processing gas conduit 41 of handling gas supply part (not shown) in the inside of this electrode support 39.In the way of this processing gas conduit 41, dispose pipe arrangement isolator 42.This pipe arrangement isolator 42 is made of insulator, prevents to supply to the high frequency power that gas imports spray head 34 and leaks into the processing gas supply part by handling gas introduction tube 41.Gas imports spray head 34 and will supply in the container 11 through gas orifice 37 from handling the processing gas that gas introduction tube 41 supplies to surge chamber 40.
In addition,, taking out of of wafer W is set in the position of the height correspondence by advancing the wafer W of pin 33 above keeping rising to from pedestal 12 moves into mouthfuls 43, switch is installed on mouthfuls 43 this is taken out of and moves into mouthfuls 43 the family of power and influence 44 taking out of to move at the sidewall of container 11.
In the container 11 of this plasma process chamber 10, as mentioned above, import spray head 34 by high frequency power being supplied with pedestal 12 and gas, high frequency power is applied to pedestal 12 and gas imports space S between the spray head 34, in this space S, the processing gas that imports spray head 34 supplies from gas produces highdensity plasma, by this plasma wafer W is implemented RIE and handles and ashing treatment.
Specifically, in this plasma process chamber 10, when wafer W is implemented RIE processing and ashing treatment, at first open the family of power and influence 44, to move in the container 11 as the wafer W of processing object, further, by direct voltage being applied on the ESC battery lead plate 23, the wafer W absorption of moving into is remained on the adsorption plane of pedestal 12.In addition, import spray head 34 by gas and will handle gas with the flow of regulation and flow-rate ratio and supply in the container 11, by APC valve 15 grades container 11 interior pressure are controlled at setting simultaneously.Further, import spray head 34 by pedestal 12 and gas high frequency power is applied to space S in the container 11.Thus, in this space S, make the processing gas that imports by gas importing spray head 34 become plasma, this plasma is converged on the surface of wafer W, physics or chemical etching are carried out in the surface of wafer W by focusing ring 25.
Wherein, the CPU of the control part (not shown) that possesses of plasma processing chamber 10 is according to handling with RIE and the work of each component parts of the above-mentioned plasma processing chamber 10 of program control that ashing treatment is corresponding.
In addition, plasma processing chamber 10 has the side wall member cylindraceous 45 (process chamber component parts) of the inner peripheral surface of the container 11 that covers drum.Since the inner peripheral surface of these side wall member 45 covering containers 11, thus relative with space S, be exposed in the plasma that produces in the space S.In addition, side wall member 45 is made of aluminium, and the face relative with space S is coated with alumite.Side wall member 45 electric suspension joints (floating), by in order to obtain by the anode/cathode ratio about the shape of pedestal 12 and side wall member 45, handle with the result of ashing treatment with RIE and to set the expectation of wafer W, on side wall member 45, produce current potential according to size, by the current potential of potential controlling apparatus 46 these generations of control that the following describes as the high frequency power of procedure parameter.
Potential controlling apparatus 46 has the conducting member 47 (component parts contact member) of pole shape and the guide bar 48 that extend to be provided with of above-below direction in the drawings, keep electrical ground base portion 49 and this conducting member 47, have along guide bar 48 liftings simultaneously and make the lifting unit 50 of conducting member 47 liftings.Because conducting member 47, base portion 49 and lifting unit 50 are made of conductor, so conducting member 47 across base portion 49 and lifting unit 50 electrical ground.
Fig. 2 is used for the contacting of the conducting member of key diagram 1 and side wall member, discontiguous schematic diagram.
In Fig. 2, side wall member 45 cylindraceous in the drawings in Shang Fang the circle-shaped end 51, has along this end the conducting member accepting hole 52 of a plurality of concavities of 51 circumference configuration, mode with relative with each conducting member accepting hole 52 disposes a plurality of conducting members 47 along above-below direction among the figure.
The diameter of conducting member accepting hole 52 is bigger slightly than the diameter of conducting member 47, and shown in Fig. 3 (A), conducting member accepting hole 52 has narrow part 52a in the place below end 51 only drops to the figure with predetermined distance.The diameter of narrow part 52a is littler than the diameter of conducting member 47.In addition, at least one in narrow part 52a and the conducting member 47 is by elastomeric material, and for example aluminium and copper constitute.So lifting unit 50 makes the front end (convex shaped part) of conducting member 47 drop to narrow part 52a, shown in Fig. 3 (B), the front end of conducting member 47 and small 52a are chimeric, thus, conducting member 47 contacts with side wall member 45, and side wall member 45 across potential controlling apparatus 46 electrical ground.In addition, when lifting unit 50 makes conducting member 47 rise to the top of narrow part 52a, owing to conducting member 47 does not contact with narrow part 52a, so conducting member 47 does not contact side wall member 45 electric suspension joints with side wall member 45.That is, the front end of a plurality of conducting members 47 and a plurality of conducting member accepting hole 52 are freely chimeric respectively.
But, the present inventor is before the present invention, be determined in the existing plasma processing chamber that does not possess above-mentioned potential controlling apparatus 46, attached to the attachment of polymer on the component parts that is exposed in the plasma etc. (below, be called " deposit ") adhere to speed (below, be called " deposition rate ") and the potential difference in each component parts and the space that produces plasma, its result is collected in Fig. 4 and the chart shown in Figure 5 understanding below having obtained.
In Fig. 4, as can be known the component parts of electric suspension joint (below, be called " suspension joint parts ") deposition rate (Fig. 4 (A)) bigger than the deposition rate (Fig. 4 (B)) of electrical ground component parts (below, be called " grounded parts "), the suspension joint parts are than the easy adventitious deposit of grounded parts.As shown in Figure 5, infer this be because, because the potential difference of grounded parts is bigger than the potential difference of suspension joint parts, so collide earthing component more when handling the ion ratio suspension joint parts that produce when gas becomes plasma, the result removes the deposit of attachment removal by the etching that ion carries out.
In addition, in Fig. 4, when the high frequency power with upper electrode is fixed on 2200W, when the high frequency power of lower electrode is set at the 0/1000/3800W Three Estate, the high frequency power of lower electrode is big more, easy more adventitious deposit on the suspension joint parts, the high frequency power of lower electrode is big more, is difficult to adventitious deposit on the earthing component more.Particularly, on earthing component,, can make deposition rate roughly be reduced to 0 as can be known by increasing the high frequency power of lower electrode.That is, the high frequency electric source that does not use component parts to use becomes earthing potential by making the component parts current potential, almost can remove fully attached to the deposit on the component parts.
According to these understanding, in the present invention, when in the deposition process of adventitious deposit on component parts when component parts is removed deposit, with the potential setting of component parts is earthing potential, when in the no deposition process that on component parts, does not have adventitious deposit not when component parts is removed deposit, be the suspension joint current potential with the potential setting of component parts.
Below, the potential control method of implementing in plasma processing chamber 10 is described.Here, in plasma processing chamber 10, implement RIE and handle and two kinds of processing of ashing treatment.In addition, the CPU of control part implements this potential control method according to the program corresponding with this method.
At first, in RIE handles, will make processing gas become the ion of plasma generation towards SiO in wafer W
2Form on the layer, Wiring pattern according to the rules makes this SiO
2The etchant resist that the part of layer is exposed in the space S is introduced.Ion of introducing and the SiO that is exposed in the space S
2Layer collides this SiO of Wiring pattern etching according to the rules
2Layer.
In RIE handles, with C
4F
8The mist of gas and argon gas is with dealing with gas, but when this mist becomes plasma, produces a large amount of neutral active groups, owing to this active group as deposit attached on the side wall member 45, so the RIE processing is a deposition process.In this RIE handles, potential controlling apparatus 46 descends by made conducting member 47 by lifting unit 50, conducting member 47 is contacted with side wall member 45, is earthing potential with the potential setting of side wall member 45, removes attached to the deposit on the side wall member 45 by the etching of being undertaken by ion.
Then in ashing treatment, be incorporated on wafer W, remove the etchant resist on the wafer W by the ion that will make processing gas become plasma generation.Because etchant resist is an organic system, so use O
2Gas is as handling gas.Because O
2Gas does not generate neutral active group as described above, and deposit is non-cohesive on the surface of side wall member 45, so ashing treatment is no deposition process.
In above-mentioned RIE handles,, work as O if almost completely remove deposit from side wall member 45
2The ion that pneumatolytic generates during for plasma is removed attached to the deposit on the side wall member 45, removes after this deposit, exposes side wall member 45, by ion etching the side wall member of exposing 45 is consumed.Corresponding therewith, in ashing treatment, potential controlling apparatus 46 rises by made conducting member 47 by lifting unit 50, and conducting member 47 is not contacted with side wall member 45, with the potential setting of side wall member 45 is the suspension joint current potential, does not remove attached to the deposit on the side wall member 45.Thus, can prevent that side wall member 45 from exposing.
Plasma processing chamber and potential control method according to present embodiment, owing to will be configured in the container 11 and be exposed to the current potential of the side wall member 45 in the plasma, in handling, RIE is set at earthing potential, in ashing treatment, be set at the suspension joint current potential, so can not use the high frequency electric source of side wall member 45 usefulness, almost completely remove attached to the deposit on the side wall member 45.So, can easily carry out the control of adhesion amount with simple formation.In addition, in the RIE as deposition process handles, can prevent that attachment is attached on the side wall member 45 superfluously, can prevent in as the ashing treatment of no deposition process simultaneously that side wall member 45 from consuming, reduce the cleaning frequency of side wall member 45 and prevent the consumption of side wall member 45, can prevent that the operating efficiency of plasma processing chamber 10 from reducing.
In addition, the control that positively proceeds to the deposit adhesion amount of side wall member 45 becomes easily, and the deposit from side wall member 45 that can be suppressed in the ashing treatment is peeled off, and can prevent the storage effect that is caused by the deposit of peeling off.
According to the plasma processing chamber of above-mentioned present embodiment, because side wall member 45 electric suspension joints, conducting member 47 electrical ground freely contacts with side wall member 45, so can be positively the current potential of side wall member 45 be switched to suspension joint current potential or earthing potential.
In addition, plasma processing chamber according to above-mentioned present embodiment, side wall member 45 cylindraceous has the conducting member accepting hole 52 of concavity, conducting member 47 is the members with the free chimeric pole shape of conducting member accepting hole 52, the conducting member accepting hole 52 of side wall member 45 has narrow part 52a, because at least one in this narrow part 52a and the conducting member 47 is made of elastomeric material, so it is chimeric by the front end and the narrow part 52a that make conducting member 47, perhaps, conducting member 47 is broken away from from narrow part 52a, the current potential of side wall member 45 can be switched to suspension joint current potential or earthing potential, thereby, can be with the simple structure current potential of switch sides wall member 45 positively.
Further, plasma processing chamber according to above-mentioned present embodiment, side wall member 45 is cylinder elements, because the circumference along this end 51 disposes a plurality of conducting member accepting holes 52 in end 51 cylindraceous, the front end of a plurality of conducting members 47 and a plurality of conducting member accepting hole 52 are freely chimeric respectively, so when side wall member 45 contacts with conducting member 47, can prevent to depart from, can control equably towards the adhesion amount of the attachment of side wall member 45 along the current potential of the circumferencial direction of side wall member 45.
In the plasma processing chamber of above-mentioned present embodiment, be entrenched in a plurality of conducting member accepting holes 52 of side wall member 45 by front end the conducting member 47 of a plurality of pole shapes, side wall member 45 is contacted with conducting member 47, but conducting member 47 is not limited to the pole shape, can be to have the shape that can be entrenched in the convex shaped part in the conducting member accepting hole 52.
In addition, as shown in Figure 6, side wall member 45 has in circle-shaped end 51, the ditch 53 that forms along the circumference of this end 51, potential controlling apparatus 46 replaces conducting members 47, also can possess by having the diameter identical with ditch 53 and being configured in two rings 54a, 54b on the same central shaft; The netted chimeric members 56 (component parts contact component) that constitute with a plurality of bar-shaped coupling member 55 that links with these two rings 54a, 54b.This chimeric member 56 is across lowering or hoisting gear (not shown) ground connection of this chimeric member 56 of lifting.In addition, chimeric member 56 is chimeric with ditch 53, contacts with side wall member 45, makes side wall member 45 electrical ground, perhaps, breaks away from from ditch 53, does not contact with side wall member 45, makes side wall member 45 electric suspension joints.Wherein, the width of ring 54a, 54b is littler than ditch 53, and ditch 53 has narrow part (not shown), and the width of this narrow part is littler than the width of ring 54a, 54b, and this is self-evident.
When chimeric member 56 and side wall member 45 are chimeric, because chimeric member 56 contacts with side wall member 45 in the whole zone of circumference, so can positively prevent to depart from, can control equably towards the adhesion amount of the attachment of side wall member 45 along the current potential of the circumferencial direction of side wall member 45.
The plasma processing chamber of above-mentioned present embodiment has lower electrode and upper electrode, and each electrode connects high frequency electric source, but upper electrode can not be connected with high frequency electric source yet.At this moment, because top electrode plate 38 electric suspension joints as top plate, deposit is attached on the top electrode plate 38 in deposition process, so preferred the setting has the potential controlling apparatus of using with the potential controlling apparatus 46 same top plate that constitute, by controlling the conducting member of potential controlling apparatus and contacting, not contacting of top electrode plate 38 that this top plate is used, with the potential setting of top electrode plate 38 is earthing potential or suspension joint current potential, controls to the sedimental adhesion amount of top electrode plate 38.
In addition, when upper electrode does not connect high frequency electric source, also can make side wall member 45 and top plate integrated.At this moment, the conductive component 47 of potential controlling apparatus 46 can contact with either party in the top plate with side wall member 45.
Wherein, when promptly convenient high frequency electric source is connected with upper electrode, also the potential controlling apparatus that top plate is used can be set.Thus, not in the plasma treatment of upper electrode supply high frequency power,, can control towards the adhesion amount of the attachment of top electrode plate 38 by the current potential of control top electrode plate 38.
Below, the plasma processing chamber of second execution mode of the present invention is described.
The formation of present embodiment is identical with above-mentioned first execution mode basically with effect, not potential controlling apparatus 46 with conducting member 47 of lifting, only different with above-mentioned first execution mode in the current potential this point of controlling side wall member 45 by the potential controlling apparatus that constitutes by circuit.So, omit explanation, below the only explanation effect different with first execution mode to same formation.
Fig. 7 is the profile that the summary of the plasma processing chamber of expression present embodiment constitutes.This plasma process chamber is also same with the plasma processing chamber 10 of Fig. 1, and RIE handles and the mode of ashing treatment constitutes so that semiconductor wafer W is implemented.
In Fig. 7, control by the 71 pairs of current potentials that in the side wall member 45 of plasma processing chamber 70, produce of potential controlling apparatus that the following describes.
During potential controlling apparatus 71 has the earth connection 72 that is connected, makes these side wall member 45 ground connection with side wall member 45 and is configured in these earth connection 72 ways, the cut-out and the switch 73 (switching device shifter) that is connected of switching earth connection 72.In addition, potential controlling apparatus 71 is the suspension joint current potential by cut off earth connections 72 by switch 73 with the potential setting of side wall member 45, is earthing potential by the potential setting that is connected with earth connection 72 side wall member 45.
Below, the potential control method of implementing in plasma processing chamber 70 is described.As mentioned above, implementing RIE in plasma processing chamber 70 handles and two kinds of processing of ashing treatment.In addition, the CPU of control part implements this method according to the program corresponding with this potential control method.
At first, in handling as the RIE of deposition process, potential controlling apparatus 71 connects earth connections 72 by switch 73, is earthing potential with the potential setting of side wall member 45, removes attached to the deposit on the side wall member 45 by the etching of being undertaken by ion.
Then, as in the ashing treatment of no deposition process, potential controlling apparatus 71 is by switch 73 cut-out earth connections 72, is the suspension joint current potential with the potential setting of side wall member 45, do not remove attached to the deposit on the side wall member 45.Thus, prevent that side wall member 45 from exposing.
According to plasma processing chamber of the present invention and potential control method, earth connection 72 by making side wall member 45 ground connection be configured in these earth connection 72 ways in, the potential controlling apparatus 71 that constitutes by cut-out of switching earth connection 72 and the switch 73 that is connected, potential setting with side wall member 45 in RIE handles is an earthing potential, in ashing treatment, be set at the suspension joint current potential, so just can carry out of the switching of the current potential of side wall member 45 towards suspension joint current potential or earthing potential with simple structure, thereby, can easily control sedimental adhesion amount.
Potential controlling apparatus 71 in the plasma processing chamber of above-mentioned present embodiment is made of earth connection 72 and switch 73, but potential controlling apparatus 71 also can possess the variable resistor element that is configured in earth connection 72 ways, for example variable inductance and variable capacitance.Thus, can control the pace of change of the current potential of side wall member 45, thereby, sedimental adhesion amount can be controlled more meticulously.
In addition, variable resistor element also can be according to attached to the resistance more of the sedimental quantitative change on the side wall member 45.Thus, can control the current potential of side wall member 45 according to the sedimental amount of adhering to, thereby, sedimental adhesion amount can be controlled more meticulously.Further, the Frequency Synchronization ground change resistance of the power that also can supply with high frequency electric source 20 of variable resistor element.Thus, can suppress the change of the sedimental adhesion amount that causes by power variation.
Potential controlling apparatus in the plasma processing chamber of the respective embodiments described above possesses the either party in machinery formation (potential controlling apparatus 46) and the circuit formation (potential controlling apparatus 71), and machinery constitutes and circuit constitutes but potential controlling apparatus also can possess.Specifically, can have the base portion 49 of potential controlling apparatus 46 across switch formation electrical ground.At this moment, when needs change the current potential of side wall member 45 rapidly, carry out the lifting of conducting member 47, on the other hand, when needing the current potential of inching side wall member 45, carry out cut-out, the connection of earth connection by switch 73.Thus, can be optimal current potential with the potential setting of side wall member 45 according to the plasma treatment content change, thereby, sedimental adhesion amount can be controlled to be optimal amount.
In the plasma processing chamber of the respective embodiments described above, the substrate of handling is a semiconductor wafer, but the substrate of handling is not limited thereto, LCD) and FPD (Flat Panel Display: glass substrate such as flat-panel monitor) for example, also can be LCD (Liquid CrystalDisplay:.
The objective of the invention is to the computer that is connected with plasma processing chamber and above-mentioned control part (below, be called " computer etc. ") supply with the storage medium of program code of software that storage realizes the function of the respective embodiments described above, also the program code that can read and implement to be stored in the storage medium by the CPU of computer etc. is reached.
At this moment, the program code itself that reads from storage medium is realized the function of the respective embodiments described above, and the storage medium of program code and this program code of storage constitutes the present invention.
In addition, as the storage medium that is used to supply with program code, for example, can be that RAM, NV-RAM, the FLOPPY (registered trade mark) that can store the said procedure code coils (floppy disk), hard disk, CD, photomagneto disk, CD-ROM, CD-R, CD-RW, DVD (DVD-ROM, DVD-RAM, DVD-RW, DVD+RW), tape, Nonvolatile memory card, other ROM etc.Perhaps, also can be by supplying to computer etc. from download said procedure codes such as other the not shown computer that is connected with internet, commercial network or local area network (LAN) etc. and databases.
In addition, the program code that reads by CPU not only comprises the function that can realize the respective embodiments described above, and according to the indication of this program code, the OS that works on CPU (operating system) etc. carries out part or all of actual treatment, realize that by this processing the situation of the function of the respective embodiments described above is also contained in.
Further, be also contained in will write from the program code that storage medium reads the expansion board that is inserted into computer etc. with functional expansion unit that computer etc. is connected behind the memory that possesses, indication according to this program code, the CPU that possesses in this expansion board and the functional expansion unit etc. carries out part or all of actual treatment, realize that by this processing the situation of the function of the respective embodiments described above is also contained in.
The program code that the form of said procedure code also can be implemented by object code, translater, the morphosises such as master copy data that supply to OS.
Claims (15)
1. plasma processing chamber, in possessing the container of accommodating substrate and being configured in this container and the electrode that is connected with high frequency electric source, make the processing gas that imports in the described container become plasma, and can implement the plasma treatment of dual mode at least to described substrate, it is characterized in that having:
Be configured in the described container and be exposed to process chamber component parts in the described plasma; With
Respectively according to the plasma treatment of described dual mode at least, be any potential controlling apparatus in suspension joint current potential and the earthing potential with the potential setting of this process chamber component parts,
The plasma treatment of described dual mode at least be the deposition process of adhering to attachment on the described process chamber component parts and on described process chamber component parts the no deposition process of non-cohesive attachment, described potential controlling apparatus is an earthing potential with the potential setting of described process chamber component parts in deposition process, and the potential setting with described process chamber component parts in no deposition process is the suspension joint current potential
2. plasma processing chamber according to claim 1 is characterized in that:
Described process chamber component parts electricity suspension joint, described potential controlling apparatus has component parts contact member electrical ground, and this component parts contact member freely contacts with described process chamber component parts.
3. plasma processing chamber according to claim 2 is characterized in that:
Described process chamber component parts has the concavity hole, and described component parts contact member has and the free chimeric convex shaped part in described concavity hole.
4. plasma processing chamber according to claim 3 is characterized in that:
Described concavity hole has narrow part, and at least one in this narrow part and the described convex shaped part is made of elastomeric material.
5. according to claim 3 or 4 described plasma processing chambers, it is characterized in that:
The cylindrical shape of described container, described process chamber component parts is the cylindrical structural member that covers the inner peripheral surface of described container, circumference along described cylindrical structural member disposes a plurality of described concavities hole, and the convex shaped part of a plurality of described component parts contact members and described a plurality of concavities hole are free respectively chimeric.
6. plasma processing chamber according to claim 2 is characterized in that:
The cylindrical shape of described container, described process chamber component parts is the cylindrical structural member that covers the inner peripheral surface of described container, described cylindrical structural member has the ditch that forms along the circumference of this cylindrical structural member in the end, and described component parts contact member is mesh shape, and is chimeric with described ditch freedom.
7. plasma processing chamber according to claim 1 is characterized in that:
Described process chamber component parts electricity suspension joint, described potential controlling apparatus has the earth connection that makes described process chamber component parts ground connection; With in the way that is configured in this earth connection and switch the cut-out of described earth connection and the switching device shifter that is connected.
8. plasma processing chamber according to claim 7 is characterized in that:
Described potential controlling apparatus has the variable resistor element in the way that is configured in described earth connection.
9. plasma processing chamber according to claim 8 is characterized in that:
Described variable resistor element is according to attached to the quantitative change of the attachment on described process chamber component parts resistance more.
10. plasma processing chamber according to claim 8 is characterized in that:
The Frequency Synchronization ground change resistance of described variable resistor element and described high frequency electric source.
11. plasma processing chamber according to claim 8 is characterized in that:
Described variable resistor element is variable inductance or variable capacitance.
12. a potential controlling apparatus is characterized in that:
In possessing the container of accommodating substrate and being connected this container and the electrode that is connected with high frequency electric source; It is configured in and makes the processing gas that imports in the described container become plasma; And can implement in the described container of the plasma processing chamber of the plasma treatment of dual mode at least described substrate; And respectively according to the plasma treatment of described at least dual mode; Be in suspension joint current potential and the earthing potential any with the potential setting that is exposed to the process chamber component parts in the described plasma
The plasma treatment of described dual mode at least be the deposition process of adhering to attachment on the described process chamber component parts and on described process chamber component parts the no deposition process of non-cohesive attachment, potential setting with described process chamber component parts in deposition process is an earthing potential, and the potential setting with described process chamber component parts in no deposition process is the suspension joint current potential.
13. potential controlling apparatus according to claim 12 is characterized in that:
Described process chamber component parts electricity suspension joint, and have electrical ground component parts contact member, this component parts contact member freely contacts with described process chamber component parts.
14., it is characterized in that according to claim 12 or 13 described potential controlling apparatus:
Described process chamber component parts electricity suspension joint, and have the earth connection that makes described process chamber component parts ground connection; With in the way that is configured in this earth connection and switch the cut-out of described earth connection and the switching device shifter that is connected.
15. potential control method, the process chamber component parts that is exposed in the described plasma is carried out control of Electric potentials, in wherein potential controlling apparatus possesses the container of accommodating substrate and is configured in this container and the electrode that is connected with high frequency electric source, it is configured in and makes the processing gas that imports in the described container become plasma, and can implement in the described container of the plasma processing chamber of the plasma treatment of dual mode at least described substrate, it is characterized in that having:
Respectively according to the plasma treatment of described dual mode at least, be any potential setting step in suspension joint current potential and the earthing potential with the potential setting of described process chamber component parts,
The plasma treatment of described dual mode at least be the deposition process of adhering to attachment on the described process chamber component parts and on described process chamber component parts the no deposition process of non-cohesive attachment, described potential setting step is an earthing potential with the potential setting of described process chamber component parts in deposition process, and the potential setting with described process chamber component parts in no deposition process is the suspension joint current potential.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005164535 | 2005-06-03 | ||
| JP2005164535A JP4628874B2 (en) | 2005-06-03 | 2005-06-03 | Plasma processing apparatus and potential control apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1873911A CN1873911A (en) | 2006-12-06 |
| CN100401471C true CN100401471C (en) | 2008-07-09 |
Family
ID=37484308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100826318A Active CN100401471C (en) | 2005-06-03 | 2006-05-19 | Plasma processing chamber, potential controlling apparatus, method, program and storage medium |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4628874B2 (en) |
| CN (1) | CN100401471C (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8137501B2 (en) * | 2007-02-08 | 2012-03-20 | Lam Research Corporation | Bevel clean device |
| JP5154124B2 (en) * | 2007-03-29 | 2013-02-27 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP5781808B2 (en) * | 2010-03-31 | 2015-09-24 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
| JP5571996B2 (en) * | 2010-03-31 | 2014-08-13 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
| JP5710318B2 (en) * | 2011-03-03 | 2015-04-30 | 東京エレクトロン株式会社 | Plasma processing equipment |
| CN105118767B (en) * | 2015-07-27 | 2017-04-12 | 郑州大学 | Plasma etching equipment |
| KR101784387B1 (en) * | 2015-08-31 | 2017-10-13 | 주식회사 인포비온 | Plasma chamber being capable of controlling the homogenization of plasma potential distribution for a charged particle beam output apparatus |
| CN109037020A (en) * | 2018-07-26 | 2018-12-18 | 德淮半导体有限公司 | Plasma device and its working method |
| JP7203593B2 (en) * | 2018-12-25 | 2023-01-13 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5865896A (en) * | 1993-08-27 | 1999-02-02 | Applied Materials, Inc. | High density plasma CVD reactor with combined inductive and capacitive coupling |
| CN1232601A (en) * | 1996-07-03 | 1999-10-20 | 泰格尔公司 | Plasma etching reactor and method for use it in new appeared film |
| US6828241B2 (en) * | 2002-01-07 | 2004-12-07 | Applied Materials, Inc. | Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0562936A (en) * | 1991-09-03 | 1993-03-12 | Mitsubishi Electric Corp | Plasma processor and plasma cleaning method |
| JP3090562B2 (en) * | 1993-05-24 | 2000-09-25 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US5952060A (en) * | 1996-06-14 | 1999-09-14 | Applied Materials, Inc. | Use of carbon-based films in extending the lifetime of substrate processing system components |
| JP2003155569A (en) * | 2001-11-16 | 2003-05-30 | Nec Kagoshima Ltd | Plasma cvd system and cleaning method therefor |
| US20040118344A1 (en) * | 2002-12-20 | 2004-06-24 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
| JP4558296B2 (en) * | 2003-09-25 | 2010-10-06 | 東京エレクトロン株式会社 | Plasma ashing method |
-
2005
- 2005-06-03 JP JP2005164535A patent/JP4628874B2/en not_active Expired - Fee Related
-
2006
- 2006-05-19 CN CNB2006100826318A patent/CN100401471C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5865896A (en) * | 1993-08-27 | 1999-02-02 | Applied Materials, Inc. | High density plasma CVD reactor with combined inductive and capacitive coupling |
| CN1232601A (en) * | 1996-07-03 | 1999-10-20 | 泰格尔公司 | Plasma etching reactor and method for use it in new appeared film |
| US6828241B2 (en) * | 2002-01-07 | 2004-12-07 | Applied Materials, Inc. | Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006339529A (en) | 2006-12-14 |
| CN1873911A (en) | 2006-12-06 |
| JP4628874B2 (en) | 2011-02-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100401471C (en) | Plasma processing chamber, potential controlling apparatus, method, program and storage medium | |
| CN101022693B (en) | Cleaning method for substrate processing chamber and substrate processing chamber | |
| CN101512734B (en) | Apparatus and methods for adjusting an edge ring potential for substrate processing | |
| CN101431854B (en) | Plasma processing apparatus | |
| CN100591190C (en) | Plasma processing apparatus and method | |
| JP5654297B2 (en) | Plasma processing apparatus and plasma processing method | |
| US6365025B1 (en) | Method for depositing and/or removing material on a substrate | |
| US5879575A (en) | Self-cleaning plasma processing reactor | |
| CN100380606C (en) | A device and method for controlling plasma with an adjustable coupling to ground circuit | |
| CN100517563C (en) | Plasma processing apparatus and plasma processing method | |
| CN1984523B (en) | Plasma processing apparatus and method | |
| CN1992164A (en) | Plasma etching method and computer-readable storage medium | |
| CN101047114A (en) | Plasma processing apparatus and plasma processing method | |
| KR20040045913A (en) | Merie plasma reactor with showerhead rf electrode tuned to the plasma with arcing suppression | |
| EP1213749A1 (en) | Plasma processing apparatus and method of plasma processing | |
| US20230074783A1 (en) | Nozzle, substrate processing apparatus including the same, and substrate processing method | |
| CN101047112A (en) | Plasma processing method and plasma processing apparatus | |
| CN1705079A (en) | Plasma processing device and impedance adjusting method | |
| US8157952B2 (en) | Plasma processing chamber, potential controlling apparatus, potential controlling method, program for implementing the method, and storage medium storing the program | |
| US20120309203A1 (en) | Plasma etching method and storage medium | |
| JP2014511561A (en) | Electrostatic clamp with reduced triboelectric charging | |
| KR101934984B1 (en) | Apparatus and method for treating substrate | |
| KR20180128382A (en) | Apparatus and method for treating substrate | |
| US6183611B1 (en) | Method and apparatus for the disposal of processing fluid used to deposit and/or remove material on a substrate | |
| KR100765623B1 (en) | Wafer cassette for semiconductor manufacturing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |