CN100378495C - 发光光栅光阀 - Google Patents
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Abstract
一种光调制器包括多个相互平行排列且被支承在柱头(26A,28A)上的细长元件。在第一模式中,该光调制器将光衍射成至少两个衍射序列。在第二模式中,该光调制器将光衍射成单一的衍射序列。每一细长元件都包括一个发光型面,该型面最好为一个横跨其宽度的反射阶梯形型面(32A,34A),或者,该型面是以该发光角斜置的单个表面。在该第一衍射模式中,在这些第一导电元件和基底(22A)之间施加一第一电偏压。在第二衍射模式中,施加第二电偏压来调节这些发光部分的相对高度。在一可替代的实施例中,采用被排列成至少3个细长元件为组的多个细长元件,当这些细长元件处在第一高度时,投射光从这些细长元件上反射。在该第一导电元件和基底之间施加各自动电偏压,以调节该多个细长元件的相对高度,从而使投射光衍射成单一衍射序列。
Description
技术领域
本发明涉及光调制器的领域,特别是涉及投射光被调制而产生发光衍射的光调制器领域。
背景技术
Bloom等人曾在题为“调制光束的方法和设备”的美国专利5,311,360号中讲授一种能在反射模式和衍射模式下运作的光栅光阀。该光栅光阀包括悬挂在基底之上的一些细长元件。在反射的模式下,光栅光阀的多个表面能使投射光在构造上结合而形成反射光。在衍射的模式下,光栅光阀的一些反射表面被该投射光的四分之一波长相互间离开以产生衍射光。这时光栅光阀主要将光衍射成一个正一的衍射序列和一个负一的衍射序列,但也将少量光衍射成较高次的衍射序列。
Bloom等人还讲授另一种能在反射模式和发光衍射模式下运作的光栅光阀。该光栅光阀包括悬挂在基底之上的一些细长元件,但在每一个细长元件的两端均包括有偏离轴线的颈部。在反射模式下,该细长元件互相平行使投射光在其上反射,从而产生反射光。在发光衍射模式下,每一细长元件都环绕一条由一些偏离轴线的颈部限定的轴线被旋转而产生发光衍射。
因为光调制器是在反射模式和衍射模式之间转换,并且因为反射模式将少量的光衍射成与发光衍射模式相同的角度,在非作用状态与作用状态之间的对比小于优化的对比。另外,这些偏离轴线的颈部对光调制器的运作至关紧要,因此偏离轴线的颈部必需有紧密的公差,这使光调制器较难制造,也使制造费用较贵。
需要有一种能提供较高对比的发光衍射光调制器。
需要有一种较易制造的发光衍射光调制器。
需要有一种制造较经济的发光衍射光调制器。
发明内容
本发明为一种光调制器。该光调制器包括一些互相平行排列并悬挂在基底之上的细长元件。光调制器在第一衍射模式下和在第二衍射模式下运作。在第一衍射模式下,投射光衍射成至少两个衍射序列。在第二衍射模式下,投射光衍射成单一的衍射序列,其衍射角不同于至少有两个衍射序列时的衍射角。
每一细长元件都具有一个发光型面。最好该发光型面为一横跨每一细长元件宽度的阶梯形型面,在一发光角度下产生有效的发光。或者该发光型面具有以该发光角倾斜的表面。
每一发光型面都具有一个反射表面。每一个从这些细长元件中选出的元件沿着细长元件都有一第一导电元件。这些细长元件都被偶联到该基底上,该基底具有一第二导电元件。
当将最好的零值的第一电偏压施加在从这些细长元件中选出的一批元件的第一导电元件和第二导电元件之间时,这些细长元件产生第一衍射。而当将第二电偏压施加在从这些细长元件中选出的一批元件的第一导电元件和第二导电元件之间时,调节这些发光部分的相对高度以产生第二衍射。
在一可替代的实施例中,一些细长元件被排列成组。每一组至少包括三个细长元件,并且每一组都包括相同数目的细长元件,每一细长元件都包括该第一导电元件。当每一组的多个细长元件处在第一高度时,该投射光自这些细长元件上反射。当在第一导电元件和第二导电元件之间施加各自的电偏压来调节每一组的细长元件的相对高度时,该投射光衍射成单一的衍射序列。
此外,该基底含有硅,另外该氧化层为二氧化硅的场氧化层。
此外,该蚀刻光阑包含二氧化硅。
此外,该蚀刻光阑包含氮化硅。
附图说明
图1示出本发明的优选的发光光栅光阀(GLV)的等角投影图。
图2A示出本发明的优选的发光光栅光阀的单个细长元件和在下面的基底的等角投影图。
图2B进一步示出本发明的单个细长元件和在下面的基底。
图3示出本发明的细长元件的横截面。
图4A和AB分别示出本发明的优选发光光栅光阀分别在非作用状态时和在完全作用状态时的横向剖视图,其时投射光与光栅平面正交。
图5A和5B分别示出本发明的优选发光光栅光阀分别在非作用状态时和在完全作用状态时的横向剖视图,其时投射光以倾斜的角度投射,使在非作用状态时,衍射光被置于零序列衍射,而在完全作用状态时,衍射光被置于与光栅平面正交的第一序列衍射。
图6A、6B、6C;7A、7B、7C;8A、8B、8C和9A、9B、9C分别示出本发明的第一、第二、第三和第四局部制成的发光光栅光阀的一个平面视图和两个相互垂直的视图。
图10A、10B和10C分别示出本发明的制成的发光光栅光阀的一个平面视图和两个相互垂直的视图。
图11和12分别示出本发明的第一和第二可替代的光栅光阀。
图13示出本发明的一个可替代的细长元件和在下面的基底。
图14A示出第三可替代的光栅光阀,该光阀处在反射状态。
图14B示出第三可替代的光栅光阀,该光阀处在将衍射光置于一衍射角的第一衍射状态。
图14C示出第三可替代的光栅光阀,该光阀处在将衍射光置于一负衍射角的第二衍射状态。
具体实施方式
图1中用等角投影示出的优选发光光栅光阀20包括:一个基底22,一些细长元件24,一些第一柱头26(示出一个)和一些第二柱头28(示出一个)。基底22包括一个第一导体30。最好每一个细长元件24都包括一个第一表面32和一个第二表面34,这两个表面都能反射光,并为每一个细长元件24构成一个发光型面36。用一个第一柱头26和一个第二柱头28将每一个细长元件24偶联到基底22上。每一个细长元件24最好还在其第一端和第二端(未示出)偶联到基底22上。
在图2A中进一步用等角投影示出一个细长元件24和一部分基底22。细长元件24包括都能反射光而构成发光型面36的第一和第二表面32和34。细长元件24被第一和第二柱头26和28偶联到基底上并在其第一和第二端(未示出)被偶联。最好细长元件24、第一柱头26和第二柱头28均由弹性材料如氮化硅构成。最好第一和第二表面32和34为一反射件,而该反射件为一铝层。或者该反射件为一不同的金属。或者该反射件为一多层介电反射件。基底22包括第一导体30。最好,基底22含有硅而第一导电层含有掺入的多晶硅。对于可见光谱的用途,最好细长元件24从第一柱头26到该第二柱头的长度约为200μm而宽度约为4.25μm。
细长元件24和基底22还在图2B中示出。细长元件24最好具有中央部42及第一和第二外部44和46。第一外部44最好在第一端38和第一柱头26处被偶联到基底22上。第二外部46最好在第二端40和第二柱头28处被偶联到基底22上。最好第一和第二外部44和46还被处在第一和第二端38和40附近的第一和第二锚件29和31分别偶联到基底22上。最好第一和第二锚件29和31具有椭圆形横截面,其长轴平行于细长元件24的长度。这样,第一和第二锚件29和31沿由细长元件24内的内部拉应力所即定的拉力方向较为刚性。最好第一和第二外部44和46的长度大致与中央部42等长,但也可不等。第一和第二外部44和46保证第一和第二柱头26和28以及在这两柱头附近和之间的细长元件均匀地制造。
在图3中示出本发明的细长元件24的横向剖视图。细长元件24最好具有一个长方形体48和一个阶梯形反射件50。长方形体最好含有氮化硅,而阶梯形反射件50最好含有铝。阶梯形反射件50形成细长元件24的第一和第二表面32和34,这两表面32和34最好被投射光的八分之一波长λ/8的高度差隔开,这样来构成发光型面36。发光型面36形成一个发光角为γ的有效发光表面52。发光角γ由下式给出:γ=arctan(λ/4A)。
在图4A示出本发明的优选发光光栅光阀20的第一横向剖视图60。该图60所示光阀20处在非作用状态,细长元件24的光栅栅距为A,由第一表面32形成的光栅平面为62。在这状态下,在细长元件24和第一导体30之间的电偏压最好为零。波长为λ的投射光I以与光栅平面62正交的方向照射发光光栅光阀20,该光阀20将光衍射成多个衍射极。为了便于论述的目的,衍射序列根据两倍于光栅栅距A的第二光栅栅距2A来制定。
在非作用的状态下,波长为λ的投射光I被衍射成第零衍射序列的D0,第二衍射序列的衍射D2,和负第二衍射序列的衍射D-2。第零序列的衍射D0与光栅平面62正交,第二序列的衍射D2和负第二序列的衍射D-2则偏转一个由下式给出的第二序列衍射角θ2:θ2=arcsin(λ/A)。对于优选的发光光栅光阀,第二序列衍射角θ2小于约15°。这时,第二序列衍射角θ2约为发光角γ的四倍。
忽略不计由于阶梯形反射件50的吸收而产生的第一光学损失和投射光在细长元件相邻对之间的间隙内通过时的第二光学损失,约有半数投射光被衍射到第零衍射序列D0,另有各四分之一投射光分别被衍射到第二衍射序列D2和负第二衍射极D-2内。
图4B示出本发明的优选发光光栅光阀20的第二横向剖视图64。该图所示光阀是在作用状态。为了产生作用状态,最好在第一导体30和细长元件24的交错的一个反射表面42之间施加一个电偏压,使细长元件24中的交错的一个元件向基底22移动。在完全作用的状态下,这个移动可达投射光I的四分之一波长λ/4。这样便能使成对的细长元件形成一个等于投射光一半波长λ/2的有效地完全作用的高度差来得出发光角γ。
在完全作用的状态下,波长为λ的投射光被衍射成为具有第一序列角θ1的第一衍射序列D1。第一序列角θ1由下式给出:θ1=arcsin(λ/2A)。对于这里所说优选光栅光阀20,第一序列角θ1约为发光角γ的两倍。
图5A示出本发明的优选光栅光阀20的第三横向剖视图70。该图70所示光阀20是在非作用状态,而投射光I是从正交偏斜一个角度θ1投向光栅平面。在非作用状态下,投射光I被衍射成一个偏斜第零序列衍射D′0,一个偏斜第二序列衍射D′2,和一个偏斜负第二序列衍射D′-2。偏斜第零序列衍射D′0与光栅平面62的法线成一偏斜第零序列角θ′0,该角θ′0等于偏斜角θ1。偏斜第零序列角θ′0和偏斜角θ1由下式给出:θ′0=θ1=arcsin(λ/2A)。偏斜第二序列衍射D′2的偏斜角为θ1,而偏斜负第二序列衍射的偏斜角则为偏斜第二序列角θ′2,该角为第零序列角θ′0的两倍。
图5B示出本发明的优选发光光阀20的第四横向剖视图72。该图72所示光阀20是在作用状态,而投射光I是从正交偏斜一个角θ1投向光栅平面62。在完全作用状态下,投射光I被衍射成一偏斜第一序列衍射θ′1,该衍射与光栅平面62正交。
这里所说的优选发光光栅光阀20有下列五个优点:
第一,它在作用状态下能提供发光的衍射,而在非作用状态与作用状态之间能很快转换。这是因为细长元件是被平移而不是被旋转。
第二,它在非作用状态下,对于正交投射不能将投射光衍射成第一衍射序列D1,而对于偏斜投射不能将投射光衍射成偏斜第一序列衍射D′1。因此在显象的用途中,当优选发光光栅光阀20产生象素阵列而使明亮象素对应于第一衍射序列D1或偏斜第一序列衍射D′1时,能提供图象的暗黑象素。在通信的用途中,当优选发光光栅光阀20被用作开关而使开关的开通状态对应于第一衍射序列D1或偏斜第一序列衍射D′1时,能提供开关的关断状态。
第三,它在作用状态下,能将投射光衍射成单一的衍射序列,即对于正交投射衍射成第一衍射序列D1,或对于偏斜投射衍射成偏斜第一序列衍射D′1。因此在显象用途中,当优选发光光栅光阀20产生象素阵列而将明亮象素对应于第一衍射序列D1或偏斜第一序列衍射D′1时,这样可简化显象光学器件,因为只有单一的衍射序列要被聚光来产生明亮的象素。在通信用途中,当优选发光光栅光阀20被用作开关而使开关的开通状态对应于第一衍射序列D1或偏斜第一序列衍射D′1时,这样能有效地利用投射光,因为投射光被衍射成单一的衍射序列。
第四,因为在非作用状态下,投射光I在正交投射时不能被衍射成第一衍射序列D1,或在偏斜投射时不能被衍射成第一序列衍射D′1。并因为在作用状态下,投射光I被衍射成单一的衍射序列,因此优选发光光栅光阀20能在非作用状态和作用状态之间提供高对比率。在通常的情况下,这个对比率约为1000比1。在显象用途中,当优选发光光栅光阀20产生象素阵列而使明亮象素对应于第一衍射序列D1或偏斜第一序列衍射D′1时,这样能产生高对比的图象。在通信用途中,当优选发光光栅光阀20被用作开关而使开关的开通状态对应于第一衍射序列D1或偏斜第一序列衍射D′1时,这样能在开通状态和关断状态之间产生高度的差别。
第五,因为作用状态能将投射光衍射成单一的衍射序列,因此不论是正交投射时的第一衍射序列D1还是偏斜投射时的偏斜第一序列衍射D′1,其焦点深度都比将有效光衍射成多个衍射序列的衍射光调制器来得深。在显象用途中,当优选发光光栅光阀20产生象素阵列而使明亮象素对应于第一衍射序列D1或偏斜第一序列衍射D′1时,可应用较简单的光学器材。在显象用途的一种型式即打印用途中,明亮象素典型地被用来照射圆筒,较深的焦点深度能提供较清晰的打印图象。
本发明的第一局部制成的发光光栅光阀80在图6A、6B和6C中示出。光阀80的制造是从一块硅的基底82开始。接下来最好在氧气气氛内加热硅基底,使在其上形成一个厚度最好约为1.0μm的场氧化层。随后,将一导电层86沉积在场氧化层84上。最好导电层86具有约为0.35μm的厚度并且含有用LPCVD(低压化学气相沉积)法沉积的搀杂多晶硅。此后,在导电层86上形成一块蚀刻光阑88。最好光阑88为在氧气氛围内由加热多晶硅而形成的第二场氧化层,具有约为200(埃,波长单位=10-8cm)的厚度。其次,在蚀刻光阑88上沉积一个牺牲层90。最好牺牲层90为用LPCVD法沉积的多晶硅,厚度约为1.0μm。或者,牺牲层的厚度可大于或大致等于投射光I的波长λ。
本发明的第二局部制成的发光光栅光阀92在图7A、7B和7C中示出。光阀92的制造是从光阀80(图6A、6B和6C)开始,包括使用照相平版印刷术和半导体蚀刻技术如等离子蚀刻的第一和第二蚀刻步骤。第一蚀刻步骤在牺牲层90内蚀刻出形成阶梯的细部93。最好该细部93有一高度为投射光波长的八分之一(λ/8)。例如,如果投射光为绿光,其波长λ为5280,那么形成阶梯的细部93的高度最好为660。第二蚀刻步骤在牺牲层90内蚀刻出柱头孔94,还蚀刻出锚件孔(未示出)。从锚件孔制出第一和第二锚件29和31(图2B)。第二蚀刻步骤还蚀刻出牺牲层边缘(未示出),这是每一个细长元件24的第一和第二端38和40偶联到基底22上的地方(图2B)。
本发明的第三局部制成的发光光栅光阀100在图8A、8B和8C中示出。光阀100的制造是从光阀92(图7A、7B和7C)开始,包括将弹性材料102沉积在光阀92上,然后将金属104沉积在弹性材料102上。最好弹性材料102为氮化硅。最好弹性材料102能将第二局部制成的光阀92的柱头孔94和锚件孔的表面覆盖。或者弹性材料102较充分地填充在柱头孔94和锚件孔内。(注意图8A和8B所画填充柱头孔94的弹性材料102为了更容易理解已予简化)。最好弹性材料具有的拉应力约为1Gpa。最好弹性材料102具有约为920的厚度并且是用LPCVD法沉积的。最好金属104为厚度约为500的铝并且是用物理蒸气沉积技术沉积的。
本发明的第四局部制成的发光光栅光阀110在图9A、9B和9C中示出。光阀110的制造是从光阀100开始,并且包括蚀刻金属104和弹性材料102以资形成由牺牲层90支承而制成的细长元件24A。
本发明的完全制成的发光光栅光阀116在图10A、10B和10C中示出。光阀116的制造是从光阀110开始,并且包括使用二氟化氙蚀刻剂蚀刻牺牲层90来完成。这样便可生产出由制成的第一和第二柱头26A和28A偶联到基底22A上的制成的细长元件24A,并且每一个制成的细长元件24A都有第一和第二制成的表面32A和34A。
本行业的行家当会知道可用结构和制造都很熟悉的搭接片来使制成的发光光栅光阀116合适地接电。另外,行家当会知道制成的发光光栅光阀116只是本发明的一个特定的实施例,因此,所说优选发光光栅光阀20较为概括地描述本发明。
本发明的第一可替代的发光光栅光阀20A的横向剖视图在图11中示出。光阀20A用第一可替代的细长元件24B来取代光阀20的细长元件24。细长元件24B包括一个具有第一、第二和第三可替代表面120、122和124的三个阶梯的型面50A。在第一和第二表面120和122及在第二和第三表面122和124之间的高度差最好为投射光I的波长的十二分之一即λ/12。这样,三个阶梯的型面50A形成本发明的第一可替代的发光型面。
本行业的行家当会知道,在第一可替代的细长元件上的阶梯数是可以添加的,只要相应地调节相邻表面之间的高度差即可。
本发明的第二可替代的发光光栅光阀20B在图12中示出。光阀20B用第二可替代的细长元件24C来取代光阀20的细长元件24。第二可替代的细长元件24C用倾斜成发光角γ的平坦表面126来取代细长元件24的阶梯形型面50。
本发明的第三可替代的发光光栅光阀用第三可替代的细长元件24D来取代光阀20的细长元件24。其中一个第三可替代的细长元件24D和基底22在图13中示出。第三可替代的细长元件24D在其中共区域128有一个阶梯形型面50,但在这个中央区域128之外,这个阶梯形型面的方向就被反转。因此第三可替代的发光光栅光阀在其中央区域能以第一序列角θ1将投射光I衍射成第一衍射序列D1,但在中央区域之外,则以负的第一序列角θ1衍射投射光I。这样在第一柱头26和中央区域之间及在中央区域128和第二柱头28之间的许多投射光I就以离开第一序列角θ1的方向被衍射,从而在下游的光学器件内可减少不需要的散射光。
本发明的第四可替代的发光光栅光阀20C在图14A中示出。光阀20C具有第四可替代的细长元件24E。细长元件24E各有一个平坦的反射表面130。这些表面130在图14A所示的非作用状态下都被置于光栅平面62上,当受到投射光I的照射时能产生反射光R。
图14B示出光阀20C的第一作用状态。光阀20C对第四可替代的细长元件24E提供动态控制,使细长元件24E的可变的编组能产生角度可变的发光衍射。例如在六元件组132的情况下能产生衍射角为θ6的六元件发光衍射D6。由于要使六元件组近似一个有效的发光面134,因此在发光面134上从第一点136到第二点138的高度差应等于投射光I的一半波长即λ/2。这样,在最低和最高细长元件24E之间的实际高度差最好为投射光I的波长的十二分之五即5λ/12。
一般地说,第n元件的发光衍射能产生具有第n衍射角θn的第一衍射。第n衍射角θn由下式给出:
θn=arcsin(λ/(n(w+s)))
其中λ=投射光I的波长,n=在一n元件组内的元件数,w=每一个第四可替代的细长元件24E的宽度,和s=第四可替代的细长元件24E各相邻对之间的间隔。
为了产生第n个衍射光,第n个元件组最好这样排列使第四可替代细长元件24E中在外边的一个具有由下式给出的第n个元件组高度差(dn):
dn=(n-1)(λ/(2n))
在第四可替代的发光光栅光阀20C的一个具体的实施例中,第四可替代的细长元件24E的宽度W为2.0μm,而间隔S甚小可忽略不计。对于5280的绿光而n为4、5、6、7的n个元件的编组,表1给出其衍射角θn和组高度差dn。
表1
n | θ<sub>n</sub> | d<sub>n</sub> |
4567 | 3.78°3.032.522.16 | 1980211222002263 |
图14C示出光阀20C的第二作用状态。在该状态下,六元件组的第四可替代的细长元件24E的高度被反转以致有效发光面134被反转,从而产生反转的六元件发光衍射D′6。这样,第四可替代的细长元件24E的动态控制就能使有效的发光面134反转并能使第四可替代的发光光栅光阀20C所提供的分立的衍射角的数目加倍。
在通信的用途中,第四可替代的发光光栅光阀20C的功能如同可变开关。例如,使用四、五、六和七的元件组的可反转的设计可得到八个衍射角,从而可提供一个八通道开关。另外,第四可替代的光栅光阀20C可与八个另外的第四可替代的发光光栅光阀20C序列联而构成一个六十四通道的开关。
本行业的行家当会知道,在不离开权利要求书所限定的本发明的精神和范围的前提下,上面所说的实施例是可以作出各种修改的。
Claims (36)
1.一种光调制器,包括:
a.一些互相平行排列并成形在一个光栅平面内的细长元件,每一细长元件都有一个反射表面,使在运作时投射光衍射成至少两个衍射序列;和
b.用来调节从这些细长元件中选出的一批元件相对于光栅平面的高度的设施,使在运作时该投射光衍射成不同于该至少两个衍射序列的单一非零值衍射序列。
2.权利要求1的光调制器,其特征在于用来调节从细长元件中选出的一批元件的高度的设施包括:
a.沿着从这些细长元件中选出的每一个元件的至少一部分的第一导电元件;和
b.偶联在该细长元件上的一基底,该基底具有一第二导电元件,使得被施加在该第一导电元件和该第二导电元件之间的电偏压调节从这些细长元件中所选出一批元件的高度。
3.权利要求2的光调制器,其特征在于还包括将该细长元件偶联到该基底上的第一和第二柱头。
4.权利要求1的光调制器,其特征在于从这些细长元件中选出的一些元件包括这些细长元件中每隔一个的一些元件。
5.权利要求1的光调制器,其特征在于每一个细长元件的反射表面都包括一个发光型面。
6.权利要求5的光调制器,其特征在于该发光型面包括至少两个平面表面。
7.权利要求6的光调制器,其特征在于该两个平面表面为平行于该光栅平面的平面。
8.权利要求5的光调制器,其特征在于该发光型面的反射表面为与该光栅平面成一发光角的单一平面表面。
9.权利要求1的光调制器,其特征在于每一细长元件宽度的两倍为一光栅栅距。
10.权利要求9的光调制器,其特征在于至少两个衍射序列包括一个第零序列衍射和一个正或负第二序列衍射中的一个。
11.权利要求10的光调制器,其特征在于该单一衍射序列为一个第一序列衍射。
12.一种光调制器,包括:
a.一些互相平行排列并成形在一个光栅平面内的细长元件;从这些细长元件中选出的每一个元件都有一个第一导电元件,每一细长元件都有一个反射表面,使在运作时投射光衍射成至少两个衍射序列;和
b.一个偶联到这些细长元件上并具有第二导电元件的基底,使在运作时被施加在这些第一导电元件和第二导电元件之间的电偏压调节从这些细长元件中选出的一批元件相对于该光栅平面的高度,还使得该投射光在运作时衍射成不同于该至少两个衍射序列的单一的非零衍射序列。
13.一种光调制器,包括:
a.一些互相平行排列在光栅平面内的细长元件,每一细长元件都有一个发光型面,每一发光型面都有一个反射表面,从这些细长元件中选出的每一个元件都有一个沿着该发光型面的第一导电元件,该发光型面具有至少两个平面表面,该两个平面表面为平行于该光栅平面的平面,使在运作时投射光衍射成至少两个衍射序列;和
b.一个偶联到这些细长元件上并具有一个第二导电元件的基底,使当被施加在该第一导电元件和第二导电元件之间的电偏压调节从这些细长元件中选出的一批元件的高度时,该投射光衍射成单一的衍射序列。
14.一种光调制器,包括:
a.用来将一投射光衍射成至少两个衍射序列的设施;和
b.用来调节衍射设施的设施使该投射光衍射成不同于该至少两个衍射序列的单一的非零衍射序列。
15.一种制造光调制器的方法,其特征在于,包括下列步骤:
a.将牺牲层沉积在一基底上;
b.将弹性材料沉积在该牺牲层上;
c.将反射材料沉积在该弹性材料上;
d.蚀刻该弹性材料和反射材料,从而形成由该牺牲层支承的细长元件,每一细长元件具有至少两个平面表面,每一细长元件的两个平面表面构成一发光型面;和
e.蚀刻该牺牲层至完成,让该细长元件偶联在该基底上。
16.权利要求15的方法,其特征在于,还包括下列步骤:
a.在沉积该牺牲层之前,在该基底和牺牲层之间的该基底上形成一氧化层;和
b.在沉积该牺牲层之前,在该氧化层和牺牲层之间的该氧化层上沉积一导电层。
17.权利要求16的方法,其特征在于,该基底含有硅,另外该氧化层为二氧化硅的场氧化层。
18.权利要求16的方法,其特征在于,还包括在该导电层上沉积一蚀刻光阑的步骤。
19.权利要求18的方法,其特征在于,该蚀刻光阑包含二氧化硅。
20.权利要求18的方法,其特征在于,该蚀刻光阑包含氮化硅。
21.权利要求16的方法,其特征在于,该导电层包含掺杂的多晶硅。
22.权利要求15的方法,其特征在于,还包括下列步骤:
a.通过该牺牲层蚀刻出第一柱头孔和第二柱头孔;和
b.蚀刻该牺牲层的边缘,以形成一个蚀刻出轮廓的牺牲层,从而暴露出在该牺牲层下面的一些层。
23.权利要求22的方法,其特征在于,该牺牲层含有多晶硅。
24.权利要求22的方法,其特征在于,蚀刻该牺牲层至完成的步骤包括利用二氟化氙蚀刻。
25.权利要求22的方法,其特征在于,沉积该弹性材料的步骤还包括将该弹性材料沉积在第一和第二柱头孔内并沉积在该牺牲层下面的一些层上。
26.权利要求25的方法,其特征在于,该弹性材料为氮化硅。
27.权利要求25的方法,其特征在于,每一个细长元件都有一个由被蚀刻出轮廓的牺牲层之外的在该牺牲层下面的一些层偶联到该基底上的第一端和第二端。
28.权利要求15的方法,其特征在于,还包括将一些带材蚀刻成所述牺牲层的步骤使得被蚀刻成所述牺牲层的带材产生所述每一个细长元件的两上平面表面。
29.权利要求15的方法,其特征在于,该反射材料为铝。
30.权利要求15的方法,其特征在于,沉积该反射材料及蚀刻该弹性材料和反射材料的步骤包括下列步骤:
a.沉积该反射材料的第一层;
b.蚀刻该反射材料的第一层以形成该反射材料的一些带材,其中该带材相当于该细长元件发光型面的一个平面表面;
c.沉积该反射材料的第二层;和
d.蚀刻该弹性材料和反射材料以形成所述一些具有两个平面表面的细长元件。
31.一种光调制器,具有:
a.一些互相平行排列并可动态地成形成多组细长元件构形之一的细长元件,每个细长元件组所包含的细长元件的数目可以动态的改变,其中,每一细长元件都有一个反射表面,使在运作中当该细长元件处在第一高度处时,照射在这些细长元件上的投射光产生一反射光,每一组构形包括每组至少三个不同数目的细长元件,并且该光调制器每次是按照单组构形而成形的;和
b.用来调节每一组细长元件的相对高度的设施,使在运作中照射在这些细长元件上的投射光产生在第一衍射角和负第一衍射角之间可选取的单一的衍射序列。
32.权利要求31的光调制器,其特征在于,用来调节该组细长元件的相对高度的设施包括:
a.沿着这些细长元件的至少一部分的第一导电元件;和
b.一个偶联到这些细长元件上并具有第二导电元件的基底,使在运作中每一组细长元件的相对高度通过在该组的这些第一导电元件和该第二导电元件之间施加各自的电偏压来调节。
33.权利要求32的光调制器,其特征在于,该细长元件的一些反射表面由一金属构成,并且该金属还构成这些第一导电元件。
34.权利要求31的光调制器,其特征在于,这些细长元件的组合是可变化的,使在运作中第一组三个细长元件以第一衍射角产生该单一衍射序列;而第二组四个细长元件以第二衍射角产生该单一的衍射序列。
35.一种光调制器,包括:
a.一些互相平行排列并成形成多组细长元件构形之一的细长元件,每个细长元件组所包含的细长元件的数目可以动态的改变,其中,每一细长元件都有一个反射表面和一个第一导电元件,每一组构形包括每组至少三个不同数目的细长元件,并且该光调制器每次是按照单组构形而成形的;和
b.一个被偶联到这些细长元件上并具有第二导电元件的基底,使在运作中当这些细长元件处在第一高度时照射在其上的投射光产生一反射光,另外使在运作中当在每一组的第一导电元件和第二导电元件之间施加各自变化的电偏压时,调节每一组细长元件的相对高度,以产生单一的衍射序列,其中该单一的衍射序列是可在第一衍射角和负第一衍射角之间选取的。
36.一种光调制器,包括:
a.用来反射一投射光的设施;和
b.用来调节该反射设施的设施,使该投射光衍射成可在第一衍射角和负第一衍射角之间选取的单一衍射序列,其中该第一衍射角按照该调节设施通过重新成形一细长元件组构形内的许多细长元件是可变的,使每组所述许多细长元件通过该调节设施而改变,其中每个细长元件组所包含的细长元件的数目可以动态的改变。
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Also Published As
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KR20040032908A (ko) | 2004-04-17 |
AU2002322697A1 (en) | 2003-03-18 |
EP1417528A2 (en) | 2004-05-12 |
US6896822B2 (en) | 2005-05-24 |
US20030035215A1 (en) | 2003-02-20 |
JP2005521073A (ja) | 2005-07-14 |
JP4339113B2 (ja) | 2009-10-07 |
US6829092B2 (en) | 2004-12-07 |
CN1639609A (zh) | 2005-07-13 |
EP1417528A4 (en) | 2005-08-03 |
WO2003021338A2 (en) | 2003-03-13 |
WO2003021338A3 (en) | 2003-07-03 |
US20030223116A1 (en) | 2003-12-04 |
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