CA2570486A1 - Integrated nanotube and field effect switching device - Google Patents

Integrated nanotube and field effect switching device Download PDF

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Publication number
CA2570486A1
CA2570486A1 CA002570486A CA2570486A CA2570486A1 CA 2570486 A1 CA2570486 A1 CA 2570486A1 CA 002570486 A CA002570486 A CA 002570486A CA 2570486 A CA2570486 A CA 2570486A CA 2570486 A1 CA2570486 A1 CA 2570486A1
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CA
Canada
Prior art keywords
switching device
input terminal
channel
integrated switching
nanotube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002570486A
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French (fr)
Other versions
CA2570486C (en
Inventor
Claude L. Bertin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nantero Inc
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Nantero, Inc.
Claude L. Bertin
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Publication of CA2570486A1 publication Critical patent/CA2570486A1/en
Application granted granted Critical
Publication of CA2570486C publication Critical patent/CA2570486C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/54—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements of vacuum tubes
    • H03K17/545—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements of vacuum tubes using microengineered devices, e.g. field emission devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit

Abstract

Hybrid switching devices (10) integrate nanotube switching elements (20) with field effect devices (30), such as NFETs and PFETs. A switching device forms and unforms a conductive channel from the signal input to the output subject to the relative state of the control input. In embodiments of the invention, the conductive channel includes a nanotube channel element (20) and a field modulatable semiconductor channel element (30). The switching device may include a nanotube switching element and a field effect device electrically disposed in series. According to one aspect of the invention, an integrated switching device is a four-terminal device with a signal input terminal (25), a control input terminal (40~), a second input terminal (40), and an output terminal (45). The devices may be non-volatile. The devices can form the basis for a hybrid NT-FET logic family and can be used to implement any Boolean logic circuit.

Claims (34)

1. An integrated switching device, comprising:
a signal input terminal;
an output terminal; and a control structure including at least one control input terminal, electrical stimulation of said control structure controlling formation of a controllably-formable electrically conductive channel between the signal input terminal and the output terminal, a first portion of the electrically conductive channel including a nanotube channel element and a second portion of the electrically conductive channel including a field modulatable semiconductor channel element.
2. The integrated switching device of claim 1, wherein the integrated switching device is non-volatile.
3. The integrated switching device of claim 1, wherein the integrated switching device is volatile.
4. The integrated switching device of claim 1, wherein the field modulatable semiconductor channel is a p-channel.
5. The integrated switching device of claim 1, wherein the field effect modulatable semiconductor channel is an n-channel.
6. The integrated switching device of claim 1, wherein the signal input terminal is connected to a power supply.
7. The integrated switching device of claim 1, wherein the signal input terminal is grounded.
8. The integrated switching device of claim 1, wherein the first portion of the electrically conductive channel is electrically disposed between the signal input terminal and the second portion of the electrically conductive channel.
9. The integrated switching device of claim 1, wherein the second portion of the electrically conductive channel is electrically disposed between the first portion of the electrically conductive channel and the output terminal.
10. The integrated switching device of claim 1, an ON state being defined by at least one input signal to the control structure inducing formation of the electrically conductive channel, wherein the first portion and second portion of the electrically conductive channel are arranged to limit leakage currents when the integrated switching device is not in the ON state.
11. The integrated switching device of claim 1, wherein the integrated switching device is capable of driving a CMOS circuit connected to the output terminal.
12. The integrated switching device of claim 1, the control structure comprising a first control input terminal and a second control input terminal.
13. The integrated switching device of claim 12, wherein the device has only four terminals to control its operation.
14. The integrated switching device of claim 12, wherein the formation of the first portion of the electrically conductive channel is controlled by both the first and second control input terminals and the formation of the second portion of the electrically conductive channel is controlled by only the first control input terminal.
15. The integrated switching device of claim 12, wherein the signals received at the first control input terminal and the second control input terminal are complementary signals in a preferred mode of operation.
16. An integrated switching device, comprising:
a signal input terminal;
an output terminal;
a nanotube switching element, including a nanotube channel element formed of at least one nanotube, and a nanotube input electrode for providing a signal to the nanotube channel element, the nanotube input electrode being electrically connected to said signal input terminal, and a nanotube output electrode for receiving a signal from the nanotube channel element when the nanotube channel element is activated;
a field effect device having a source, a drain, and a gate, with a field modulatable channel between the source and the drain, the source being electrically connected to the output electrode of the nanotube switching element and the drain being electrically connected to said output terminal; and a control structure comprising at least one control input terminal to control formation of a controllably-formable conductive channel between said signal input terminal and said output terminal, a first portion of the conductive channel being formed by the nanotube channel element of the nanotube switching element, and a second portion of the conductive channel being formed by the field modulatable channel of the field effect device.
17. The integrated switching device of claim 16, wherein the field effect device has an n-channel.
18. The integrated switching device of claim 17, wherein the signal input terminal is electrically connected to ground.
19. The integrated switching device of claim 16, wherein the field effect device has a p-channel.
20. The integrated switching device of claim 19, wherein the signal input terminal is electrically connected to a power supply.
21. The integrated switching device of claim 16, wherein the device is non-volatile.
22. The integrated switching device of claim 16, wherein the device is volatile.
23. The integrated switching device of claim 16, wherein the control structure interconnects the gate of said field effect device and a control electrode of the nanotube switching element to the same logical input.
24. An integrated switching device, comprising:
a signal input terminal;
an output terminal;
a network of at least one nanotube switching element electrically disposed between said signal input terminal and said output terminal;
a network of at least one field effect device electrically disposed between said signal input terminal and said output terminal, said network of at least one field effect device being electrically in series with said network of at least one nanotube switching element; and a control structure to control formation of a controllably-formable conductive channel between said signal input terminal and said output terminal, a first portion of the conductive channel being provided by a conductive path formed by the network of at least one nanotube switching element and a second portion of the conductive channel being provided by a conductive path formed by the network of at least one field effect device.
25. The integrated switching device of claim 24, wherein said at least one field effect device has a p-channel.
26. The integrated switching device of claim 24, wherein said at least one field effect device has an n-channel.
27. The integrated switching device of claim 24, wherein said control structure includes a first control input terminal and a second control input terminal, and wherein the device has only four terminals to control its operation.
28. The integrated switching device of claim 24, wherein the device is non-volatile.
29. The integrated switching device of claim 24, wherein the device is volatile.
30. A Boolean logic circuit, comprising:
at least one input terminal and an output terminal;
a network of pull-up and pull-down circuits electrically disposed between the at least one input terminal and the output terminal;
each pull-up circuit including at least one nanotube switching element and at least one p-channel field effect device connected in series; and each pull-down circuit including at least one nanotube switching element and at least one n-channel field effect device connected in series;
said network of pull-up and pull-down circuits effectuating a Boolean function transformation of Boolean signals applied to said at least one input terminal and providing the Boolean result on the output terminal.
31. The Boolean logic circuit of claim 30, wherein the circuit is non-volatile.
32. The Boolean logic circuit of claim 30, wherein the circuit is volatile.
33. The Boolean logic circuit of claim 30, wherein the circuit has two input terminals that are complementary.
34. The Boolean logic circuit of claim 30, wherein the circuit has two input terminals that are complementary and has two output terminals that are complementary.
CA2570486A 2004-06-18 2005-05-26 Integrated nanotube and field effect switching device Expired - Fee Related CA2570486C (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US58101504P 2004-06-18 2004-06-18
US60/581,015 2004-06-18
US11/033,089 US7288970B2 (en) 2004-06-18 2005-01-10 Integrated nanotube and field effect switching device
US11/033,089 2005-01-10
PCT/US2005/018535 WO2006078299A2 (en) 2004-06-18 2005-05-26 Integrated nanotube and field effect switching device

Publications (2)

Publication Number Publication Date
CA2570486A1 true CA2570486A1 (en) 2006-07-27
CA2570486C CA2570486C (en) 2011-10-18

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Family Applications (1)

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CA2570486A Expired - Fee Related CA2570486C (en) 2004-06-18 2005-05-26 Integrated nanotube and field effect switching device

Country Status (6)

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US (3) US7288970B2 (en)
EP (1) EP1776763B1 (en)
AT (1) ATE419676T1 (en)
CA (1) CA2570486C (en)
DE (1) DE602005012110D1 (en)
WO (1) WO2006078299A2 (en)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6924538B2 (en) * 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7259410B2 (en) * 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US7335395B2 (en) * 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7560136B2 (en) * 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7666382B2 (en) 2004-12-16 2010-02-23 Nantero, Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
US7858185B2 (en) * 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
US7294877B2 (en) * 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
EP1631812A4 (en) * 2003-05-14 2010-12-01 Nantero Inc Sensor platform using a horizontally oriented nanotube element
CA2528804A1 (en) * 2003-06-09 2005-01-06 Nantero, Inc Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7274064B2 (en) * 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
JP3731589B2 (en) * 2003-07-18 2006-01-05 ソニー株式会社 Imaging device and synchronization signal generator
JP2007502545A (en) * 2003-08-13 2007-02-08 ナンテロ，インク． Nanotube-based exchange element with a plurality of control devices and circuit produced from said element
US7375369B2 (en) * 2003-09-08 2008-05-20 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US7658869B2 (en) * 2004-06-03 2010-02-09 Nantero, Inc. Applicator liquid containing ethyl lactate for preparation of nanotube films
US7556746B2 (en) * 2004-06-03 2009-07-07 Nantero, Inc. Method of making an applicator liquid for electronics fabrication process
US7652342B2 (en) * 2004-06-18 2010-01-26 Nantero, Inc. Nanotube-based transfer devices and related circuits
WO2006121461A2 (en) * 2004-09-16 2006-11-16 Nantero, Inc. Light emitters using nanotubes and methods of making same
US20100147657A1 (en) * 2004-11-02 2010-06-17 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
US7567414B2 (en) * 2004-11-02 2009-07-28 Nantero, Inc. Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
TWI324773B (en) * 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7781862B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US7598127B2 (en) * 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
US7575693B2 (en) * 2005-05-23 2009-08-18 Nantero, Inc. Method of aligning nanotubes and wires with an etched feature
US7402770B2 (en) 2005-06-10 2008-07-22 Lsi Logic Corporation Nano structure electrode design
US7538040B2 (en) 2005-06-30 2009-05-26 Nantero, Inc. Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
US7907899B1 (en) * 2005-07-13 2011-03-15 Impinj, Inc. RFID tags having a rectifier circuit including a dual-terminal rectifier device
US7838943B2 (en) * 2005-07-25 2010-11-23 International Business Machines Corporation Shared gate for conventional planar device and horizontal CNT
US7446044B2 (en) * 2005-09-19 2008-11-04 California Institute Of Technology Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same
GB0618045D0 (en) * 2006-09-13 2006-10-25 Cavendish Kinetics Ltd Non-volatile memory bitcell
WO2009008929A2 (en) 2007-04-09 2009-01-15 Northeastern University Bistable nanoswitch
US7701013B2 (en) * 2007-07-10 2010-04-20 International Business Machines Corporation Nanoelectromechanical transistors and methods of forming same
US7550354B2 (en) * 2007-07-11 2009-06-23 International Business Machines Corporation Nanoelectromechanical transistors and methods of forming same
US8065634B1 (en) 2007-09-28 2011-11-22 The Board Of Trustees Of The Leland Stanford Junior University System and method for analyzing a nanotube logic circuit
US9019756B2 (en) * 2008-02-14 2015-04-28 Cavendish Kinetics, Ltd Architecture for device having cantilever electrode
US8659940B2 (en) * 2008-03-25 2014-02-25 Nantero Inc. Carbon nanotube-based neural networks and methods of making and using same
KR101432037B1 (en) * 2008-04-25 2014-08-20 삼성전자주식회사 Convertible logic circuit comprising carbon natube transistor having ambipolar charateristic
WO2009135017A1 (en) * 2008-04-30 2009-11-05 Cavendish Kinetics Inc. Four-terminal multiple-time programmable memory bitcell and array architecture
US8357921B2 (en) * 2008-08-14 2013-01-22 Nantero Inc. Integrated three-dimensional semiconductor system comprising nonvolatile nanotube field effect transistors
KR20100094192A (en) * 2009-02-18 2010-08-26 삼성전자주식회사 Static random access memory using carbon nanotube thin films
US8350360B1 (en) 2009-08-28 2013-01-08 Lockheed Martin Corporation Four-terminal carbon nanotube capacitors
US20110056812A1 (en) * 2009-09-08 2011-03-10 Kaul Anupama B Nano-electro-mechanical switches using three-dimensional sidewall-conductive carbon nanofibers and method for making the same
US8435798B2 (en) * 2010-01-13 2013-05-07 California Institute Of Technology Applications and methods of operating a three-dimensional nano-electro-mechanical resonator and related devices
US8405189B1 (en) 2010-02-08 2013-03-26 Lockheed Martin Corporation Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors
EP2363958A1 (en) * 2010-03-04 2011-09-07 Thomson Licensing Field programmable gate array
US8125824B1 (en) 2010-09-02 2012-02-28 Lockheed Martin Corporation Nanotube random access memory (NRAM) and transistor integration
EP2619780B1 (en) 2010-09-21 2015-12-16 Cavendish Kinetics Inc. Pull up electrode and waffle type microstructure
US8716072B2 (en) 2011-07-25 2014-05-06 International Business Machines Corporation Hybrid CMOS technology with nanowire devices and double gated planar devices
EP2887354B1 (en) * 2013-12-20 2019-08-07 IMEC vzw Nano-electro-mechanical based memory
US9413348B2 (en) * 2014-07-29 2016-08-09 Semiconductor Components Industries, Llc Electronic circuit including a switch having an associated breakdown voltage and a method of using the same
US11831309B2 (en) * 2018-04-20 2023-11-28 Texas Instruments Incorporated Stress reduction on stacked transistor circuits
CN113422595B (en) * 2021-08-24 2021-11-19 成都市易冲半导体有限公司 Electronic switch for processing negative voltage AC signal and control method thereof

Family Cites Families (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51129144A (en) * 1975-05-02 1976-11-10 Toshiba Corp Memory divice of non volatile information
CH670914A5 (en) 1986-09-10 1989-07-14 Landis & Gyr Ag
JP2930168B2 (en) * 1992-10-09 1999-08-03 シャープ株式会社 Driving method of ferroelectric memory device
GB9309327D0 (en) 1993-05-06 1993-06-23 Smith Charles G Bi-stable memory element
US5578976A (en) 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
US5682345A (en) 1995-07-28 1997-10-28 Micron Quantum Devices, Inc. Non-volatile data storage unit method of controlling same
US6183714B1 (en) * 1995-09-08 2001-02-06 Rice University Method of making ropes of single-wall carbon nanotubes
US5818748A (en) 1995-11-21 1998-10-06 International Business Machines Corporation Chip function separation onto separate stacked chips
US6445006B1 (en) 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same
US6159620A (en) 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
US6011744A (en) * 1997-07-16 2000-01-04 Altera Corporation Programmable logic device with multi-port memory
US6221330B1 (en) * 1997-08-04 2001-04-24 Hyperion Catalysis International Inc. Process for producing single wall nanotubes using unsupported metal catalysts
DE19738115C1 (en) * 1997-09-01 1999-03-18 Siemens Ag Circuit arrangement with single-electron components, method for their operation and application of the method for adding binary numbers
US5903010A (en) * 1997-10-29 1999-05-11 Hewlett-Packard Company Quantum wire switch and switching method
US6097243A (en) * 1998-07-21 2000-08-01 International Business Machines Corporation Device and method to reduce power consumption in integrated semiconductor devices using a low power groggy mode
US6097241A (en) * 1998-07-21 2000-08-01 International Business Machines Corporation ASIC low power activity detector to change threshold voltage
US7416699B2 (en) 1998-08-14 2008-08-26 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotube devices
US6348700B1 (en) * 1998-10-27 2002-02-19 The Mitre Corporation Monomolecular rectifying wire and logic based thereupon
US6232706B1 (en) * 1998-11-12 2001-05-15 The Board Of Trustees Of The Leland Stanford Junior University Self-oriented bundles of carbon nanotubes and method of making same
US6472705B1 (en) * 1998-11-18 2002-10-29 International Business Machines Corporation Molecular memory & logic
DE60028343T2 (en) 1999-02-12 2007-05-24 Board Of Trustees Operating Michigan State University, East Lansing NANO CAPSULES WITH LOADED PARTICLES, THEIR USE AND METHOD FOR THEIR MANUFACTURE
US6160230A (en) 1999-03-01 2000-12-12 Raytheon Company Method and apparatus for an improved single pole double throw micro-electrical mechanical switch
US6256767B1 (en) 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6314019B1 (en) 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US7030408B1 (en) * 1999-03-29 2006-04-18 Hewlett-Packard Development Company, L.P. Molecular wire transistor (MWT)
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6518156B1 (en) * 1999-03-29 2003-02-11 Hewlett-Packard Company Configurable nanoscale crossbar electronic circuits made by electrochemical reaction
US6345362B1 (en) * 1999-04-06 2002-02-05 International Business Machines Corporation Managing Vt for reduced power using a status table
EP2239794A3 (en) 1999-07-02 2011-03-23 President and Fellows of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6198655B1 (en) * 1999-12-10 2001-03-06 The Regents Of The University Of California Electrically addressable volatile non-volatile molecular-based switching devices
US6346846B1 (en) * 1999-12-17 2002-02-12 International Business Machines Corporation Methods and apparatus for blowing and sensing antifuses
JP3572329B2 (en) 1999-12-22 2004-09-29 エルピーダメモリ株式会社 A data latch circuit and an operation method of the data latch circuit.
US6625740B1 (en) 2000-01-13 2003-09-23 Cirrus Logic, Inc. Dynamically activating and deactivating selected circuit blocks of a data processing integrated circuit during execution of instructions according to power code bits appended to selected instructions
US7335603B2 (en) * 2000-02-07 2008-02-26 Vladimir Mancevski System and method for fabricating logic devices comprising carbon nanotube transistors
US7139743B2 (en) * 2000-04-07 2006-11-21 Washington University Associative database scanning and information retrieval using FPGA devices
EP1170799A3 (en) 2000-07-04 2009-04-01 Infineon Technologies AG Electronic device and method of manufacture of an electronic device
CN1251962C (en) 2000-07-18 2006-04-19 Lg电子株式会社 Method of horizontal growth of carbon nanotube and field effect transistor using carbon nanotube
KR100862131B1 (en) * 2000-08-22 2008-10-09 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 Semiconductor nanowires manufacturing method
US6376787B1 (en) * 2000-08-24 2002-04-23 Texas Instruments Incorporated Microelectromechanical switch with fixed metal electrode/dielectric interface with a protective cap layer
US6504118B2 (en) * 2000-10-27 2003-01-07 Daniel J Hyman Microfabricated double-throw relay with multimorph actuator and electrostatic latch mechanism
US6548841B2 (en) * 2000-11-09 2003-04-15 Texas Instruments Incorporated Nanomechanical switches and circuits
JP3587248B2 (en) 2000-12-20 2004-11-10 日本電気株式会社 Scan flip-flops
US6597048B1 (en) * 2000-12-26 2003-07-22 Cornell Research Foundation Electrostatically charged microstructures
JP2002203768A (en) * 2000-12-28 2002-07-19 Toshiba Corp Exposure method, exposure system and recording medium
US6625047B2 (en) 2000-12-31 2003-09-23 Texas Instruments Incorporated Micromechanical memory element
US6423583B1 (en) * 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
WO2002079514A1 (en) 2001-01-10 2002-10-10 The Trustees Of Boston College Dna-bridged carbon nanotube arrays
US6373771B1 (en) * 2001-01-17 2002-04-16 International Business Machines Corporation Integrated fuse latch and shift register for efficient programming and fuse readout
US6803840B2 (en) 2001-03-30 2004-10-12 California Institute Of Technology Pattern-aligned carbon nanotube growth and tunable resonator apparatus
US6777982B2 (en) 2001-04-03 2004-08-17 Carnegie Mellon University Molecular scale latch and associated clocking scheme to provide gain, memory and I/O isolation
US6426687B1 (en) * 2001-05-22 2002-07-30 The Aerospace Corporation RF MEMS switch
US6673424B1 (en) * 2001-06-19 2004-01-06 Arizona Board Of Regents Devices based on molecular electronics
JP2003017074A (en) * 2001-07-02 2003-01-17 Honda Motor Co Ltd Fuel cell
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6643165B2 (en) * 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6924538B2 (en) * 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6911682B2 (en) * 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6884734B2 (en) * 2001-11-20 2005-04-26 International Business Machines Corporation Vapor phase etch trim structure with top etch blocking layer
US6835613B2 (en) 2001-12-06 2004-12-28 University Of South Florida Method of producing an integrated circuit with a carbon nanotube
US7176505B2 (en) * 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) * 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
EP1468423A2 (en) 2002-01-18 2004-10-20 California Institute Of Technology Array-based architecture for molecular electronics
EP1341184B1 (en) * 2002-02-09 2005-09-14 Samsung Electronics Co., Ltd. Memory device utilizing carbon nanotubes and method of fabricating the memory device
US6889216B2 (en) 2002-03-12 2005-05-03 Knowm Tech, Llc Physical neural network design incorporating nanotechnology
US7049625B2 (en) 2002-03-18 2006-05-23 Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
US6946410B2 (en) 2002-04-05 2005-09-20 E. I. Du Pont De Nemours And Company Method for providing nano-structures of uniform length
US6760245B2 (en) * 2002-05-01 2004-07-06 Hewlett-Packard Development Company, L.P. Molecular wire crossbar flash memory
WO2003099709A2 (en) * 2002-05-21 2003-12-04 Eikos, Inc. Method for patterning carbon nanotube coating and carbon nanotube wiring
US6794914B2 (en) 2002-05-24 2004-09-21 Qualcomm Incorporated Non-volatile multi-threshold CMOS latch with leakage control
US6759693B2 (en) * 2002-06-19 2004-07-06 Nantero, Inc. Nanotube permeable base transistor
US6774052B2 (en) * 2002-06-19 2004-08-10 Nantero, Inc. Method of making nanotube permeable base transistor
TWI282092B (en) * 2002-06-28 2007-06-01 Brilliance Semiconductor Inc Nonvolatile static random access memory cell
JP4338948B2 (en) * 2002-08-01 2009-10-07 株式会社半導体エネルギー研究所 Method for producing carbon nanotube semiconductor device
US6809465B2 (en) 2002-08-23 2004-10-26 Samsung Electronics Co., Ltd. Article comprising MEMS-based two-dimensional e-beam sources and method for making the same
US7051945B2 (en) 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
JP3906139B2 (en) * 2002-10-16 2007-04-18 株式会社東芝 Magnetic random access memory
US20040077107A1 (en) * 2002-10-17 2004-04-22 Nantero, Inc. Method of making nanoscopic tunnel
US20040087162A1 (en) * 2002-10-17 2004-05-06 Nantero, Inc. Metal sacrificial layer
US20040075159A1 (en) * 2002-10-17 2004-04-22 Nantero, Inc. Nanoscopic tunnel
WO2005000739A1 (en) * 2002-10-29 2005-01-06 President And Fellows Of Harvard College Carbon nanotube device fabrication
US7858185B2 (en) * 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
US6919740B2 (en) * 2003-01-31 2005-07-19 Hewlett-Packard Development Company, Lp. Molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits, and more complex circuits composed, in part, from molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits
US6918284B2 (en) 2003-03-24 2005-07-19 The United States Of America As Represented By The Secretary Of The Navy Interconnected networks of single-walled carbon nanotubes
US6944054B2 (en) * 2003-03-28 2005-09-13 Nantero, Inc. NRAM bit selectable two-device nanotube array
US7113426B2 (en) * 2003-03-28 2006-09-26 Nantero, Inc. Non-volatile RAM cell and array using nanotube switch position for information state
US7075141B2 (en) * 2003-03-28 2006-07-11 Nantero, Inc. Four terminal non-volatile transistor device
US7294877B2 (en) * 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
US6995046B2 (en) * 2003-04-22 2006-02-07 Nantero, Inc. Process for making byte erasable devices having elements made with nanotubes
US7045421B2 (en) * 2003-04-22 2006-05-16 Nantero, Inc. Process for making bit selectable devices having elements made with nanotubes
EP1631812A4 (en) * 2003-05-14 2010-12-01 Nantero Inc Sensor platform using a horizontally oriented nanotube element
US20040238907A1 (en) 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
CA2528804A1 (en) * 2003-06-09 2005-01-06 Nantero, Inc Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US6882256B1 (en) * 2003-06-20 2005-04-19 Northrop Grumman Corporation Anchorless electrostatically activated micro electromechanical system switch
CN101562049B (en) * 2003-08-13 2012-09-05 南泰若股份有限公司 Nanotube-based switching elements with multiple controls and circuits made thereof
JP2007502545A (en) * 2003-08-13 2007-02-08 ナンテロ，インク． Nanotube-based exchange element with a plurality of control devices and circuit produced from said element
WO2005017967A2 (en) * 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
US7115960B2 (en) * 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
US7289357B2 (en) * 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
US7416993B2 (en) * 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US7375369B2 (en) * 2003-09-08 2008-05-20 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US20050052894A1 (en) * 2003-09-09 2005-03-10 Nantero, Inc. Uses of nanofabric-based electro-mechanical switches
KR100545212B1 (en) * 2003-12-26 2006-01-24 동부아남반도체 주식회사 Non-volatile memory device with oxide stack and non-volatile SRAM using the same
KR100620218B1 (en) * 2003-12-31 2006-09-11 동부일렉트로닉스 주식회사 Semiconductor device
KR100580292B1 (en) * 2003-12-31 2006-05-15 동부일렉트로닉스 주식회사 Non-volatile memory device
KR100599106B1 (en) * 2003-12-31 2006-07-12 동부일렉트로닉스 주식회사 Non-volatile memory device and method for fabricating the same
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
US6969651B1 (en) 2004-03-26 2005-11-29 Lsi Logic Corporation Layout design and process to form nanotube cell for nanotube memory applications
US7161403B2 (en) * 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US6955937B1 (en) 2004-08-12 2005-10-18 Lsi Logic Corporation Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell
US7567414B2 (en) * 2004-11-02 2009-07-28 Nantero, Inc. Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
US8362525B2 (en) * 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same

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CA2570486C (en) 2011-10-18
US20080218210A1 (en) 2008-09-11
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US7288970B2 (en) 2007-10-30
US7564269B2 (en) 2009-07-21
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US20060061389A1 (en) 2006-03-23
DE602005012110D1 (en) 2009-02-12
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EP1776763A4 (en) 2007-10-17
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WO2006078299A2 (en) 2006-07-27
US20090295431A1 (en) 2009-12-03

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