CA2570429A1 - Receiver circuit using nanotube-based switches and transistors - Google Patents
Receiver circuit using nanotube-based switches and transistors Download PDFInfo
- Publication number
- CA2570429A1 CA2570429A1 CA002570429A CA2570429A CA2570429A1 CA 2570429 A1 CA2570429 A1 CA 2570429A1 CA 002570429 A CA002570429 A CA 002570429A CA 2570429 A CA2570429 A CA 2570429A CA 2570429 A1 CA2570429 A1 CA 2570429A1
- Authority
- CA
- Canada
- Prior art keywords
- output
- input
- receiver circuit
- switching element
- node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/17—Memory cell being a nanowire transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/50—Bistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
Abstract
Receiver circuits using nanotube-based switches and transistors. A receiver circuit includes a differential input having a first and second input link, a differential output having a first and second output link, and first and second switching elements in electrical communication with the input links and the output links. Each switching element has an input node, an output node, a nanotube channel element, and a control structure disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. First and second MOS transistors are each in electrical communication with a reference signal and with the output node of a corresponding one of the first and second switching elements.
Claims (7)
1. A receiver circuit, comprising:
a differential input having a first and second input link;
a differential output having a first and second output link;
first and second switching elements in electrical communication with the input links and the output links, each switching element having an input node, an output node, a nanotube channel element, and a control structure disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node; and first and second MOS transistors, each in electrical communication with a reference signal and with the output node of a corresponding one of the first and second switching elements.
a differential input having a first and second input link;
a differential output having a first and second output link;
first and second switching elements in electrical communication with the input links and the output links, each switching element having an input node, an output node, a nanotube channel element, and a control structure disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node; and first and second MOS transistors, each in electrical communication with a reference signal and with the output node of a corresponding one of the first and second switching elements.
2. The receiver circuit of claim 1 wherein the first and second MOS
transistors are PFET transistors in electrical communication with Vdd voltage and wherein the output node of a first switching element is coupled to the drain of the first MOS
transistor and a gate of the second MOS transistor, and wherein the output node of a second switching element is coupled to the drain of the second MOS transistor and a gate of the first MOS transistor.
transistors are PFET transistors in electrical communication with Vdd voltage and wherein the output node of a first switching element is coupled to the drain of the first MOS
transistor and a gate of the second MOS transistor, and wherein the output node of a second switching element is coupled to the drain of the second MOS transistor and a gate of the first MOS transistor.
3. The receiver circuit of claim 2 wherein the input node of each switching element is in electrical communication with ground.
4. The receiver circuit of claim 3 wherein the control structure of each switching element includes a set electrode and a release electrode, wherein the set electrode is activated to cause the nanotube channel element to electrically and mechanically contact the output node to form a channel, and wherein the release electrode is activated to cause the nanotube channel element to release electrical and mechanical contact with the output node to unform the channel.
5. The receiver circuit of claim 4 wherein a first link of the differential input is coupled to the set electrode of the first switching element and the release electrode of the second switching element, and wherein a second link of the differential input is coupled to the set electrode of the second switching element and the release electrode of the first switching element.
6. The receiver circuit of claim 5 wherein the output nodes of the first and second switching elements are coupled, respectively, to a first and second output link of the differential output.
7. The receiver circuit of claim 1 wherein the first and second switching elements retail channel formation non-volatilely.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58116204P | 2004-06-18 | 2004-06-18 | |
US60/581,162 | 2004-06-18 | ||
US11/033,213 | 2005-01-10 | ||
US11/033,213 US7329931B2 (en) | 2004-06-18 | 2005-01-10 | Receiver circuit using nanotube-based switches and transistors |
PCT/US2005/018540 WO2006033683A2 (en) | 2004-06-18 | 2005-05-26 | Receiver circuit using nanotube-based switches and transistors |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2570429A1 true CA2570429A1 (en) | 2006-03-30 |
CA2570429C CA2570429C (en) | 2011-09-13 |
Family
ID=35481264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA2570429A Expired - Fee Related CA2570429C (en) | 2004-06-18 | 2005-05-26 | Receiver circuit using nanotube-based switches and transistors |
Country Status (4)
Country | Link |
---|---|
US (2) | US7329931B2 (en) |
EP (1) | EP1756954A4 (en) |
CA (1) | CA2570429C (en) |
WO (1) | WO2006033683A2 (en) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6706402B2 (en) | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
US7666382B2 (en) | 2004-12-16 | 2010-02-23 | Nantero, Inc. | Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof |
US7858185B2 (en) | 2003-09-08 | 2010-12-28 | Nantero, Inc. | High purity nanotube fabrics and films |
US7294877B2 (en) * | 2003-03-28 | 2007-11-13 | Nantero, Inc. | Nanotube-on-gate FET structures and applications |
WO2005031299A2 (en) | 2003-05-14 | 2005-04-07 | Nantero, Inc. | Sensor platform using a non-horizontally oriented nanotube element |
US7245520B2 (en) * | 2004-08-13 | 2007-07-17 | Nantero, Inc. | Random access memory including nanotube switching elements |
EP1665278A4 (en) | 2003-08-13 | 2007-11-07 | Nantero Inc | Nanotube-based switching elements with multiple controls and circuits made from same |
US7375369B2 (en) | 2003-09-08 | 2008-05-20 | Nantero, Inc. | Spin-coatable liquid for formation of high purity nanotube films |
US7504051B2 (en) | 2003-09-08 | 2009-03-17 | Nantero, Inc. | Applicator liquid for use in electronic manufacturing processes |
US7658869B2 (en) | 2004-06-03 | 2010-02-09 | Nantero, Inc. | Applicator liquid containing ethyl lactate for preparation of nanotube films |
US7652342B2 (en) * | 2004-06-18 | 2010-01-26 | Nantero, Inc. | Nanotube-based transfer devices and related circuits |
US7330709B2 (en) * | 2004-06-18 | 2008-02-12 | Nantero, Inc. | Receiver circuit using nanotube-based switches and logic |
WO2006121461A2 (en) | 2004-09-16 | 2006-11-16 | Nantero, Inc. | Light emitters using nanotubes and methods of making same |
US7345805B2 (en) * | 2004-09-27 | 2008-03-18 | Idc, Llc | Interferometric modulator array with integrated MEMS electrical switches |
EP1807919A4 (en) | 2004-11-02 | 2011-05-04 | Nantero Inc | Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches |
US7359694B2 (en) * | 2004-12-16 | 2008-04-15 | Northrop Grumman Corporation | Carbon nanotube devices and method of fabricating the same |
US8548415B2 (en) | 2004-12-16 | 2013-10-01 | Northrop Grumman Systems Corporation | Carbon nanotube devices and method of fabricating the same |
US7479654B2 (en) | 2005-05-09 | 2009-01-20 | Nantero, Inc. | Memory arrays using nanotube articles with reprogrammable resistance |
US7781862B2 (en) | 2005-05-09 | 2010-08-24 | Nantero, Inc. | Two-terminal nanotube devices and systems and methods of making same |
TWI324773B (en) | 2005-05-09 | 2010-05-11 | Nantero Inc | Non-volatile shadow latch using a nanotube switch |
US7598127B2 (en) * | 2005-05-12 | 2009-10-06 | Nantero, Inc. | Nanotube fuse structure |
US7541216B2 (en) * | 2005-06-09 | 2009-06-02 | Nantero, Inc. | Method of aligning deposited nanotubes onto an etched feature using a spacer |
US7538040B2 (en) * | 2005-06-30 | 2009-05-26 | Nantero, Inc. | Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers |
US7446044B2 (en) | 2005-09-19 | 2008-11-04 | California Institute Of Technology | Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same |
US7701013B2 (en) * | 2007-07-10 | 2010-04-20 | International Business Machines Corporation | Nanoelectromechanical transistors and methods of forming same |
US7550354B2 (en) * | 2007-07-11 | 2009-06-23 | International Business Machines Corporation | Nanoelectromechanical transistors and methods of forming same |
US8222127B2 (en) | 2008-07-18 | 2012-07-17 | Micron Technology, Inc. | Methods of forming structures having nanotubes extending between opposing electrodes and structures including same |
US8357921B2 (en) * | 2008-08-14 | 2013-01-22 | Nantero Inc. | Integrated three-dimensional semiconductor system comprising nonvolatile nanotube field effect transistors |
US8435798B2 (en) | 2010-01-13 | 2013-05-07 | California Institute Of Technology | Applications and methods of operating a three-dimensional nano-electro-mechanical resonator and related devices |
EP2557567A1 (en) | 2011-08-09 | 2013-02-13 | Thomson Licensing | Programmable read-only memory device and method of writing the same |
US11056797B2 (en) | 2019-07-29 | 2021-07-06 | Eagle Technology, Llc | Articles comprising a mesh formed of a carbon nanotube yarn |
US11949161B2 (en) | 2021-08-27 | 2024-04-02 | Eagle Technology, Llc | Systems and methods for making articles comprising a carbon nanotube material |
US11901629B2 (en) | 2021-09-30 | 2024-02-13 | Eagle Technology, Llc | Deployable antenna reflector |
Family Cites Families (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3303201A (en) | 1964-02-24 | 1967-02-07 | Herbert C Stecker | Halogenated anilides of thiophene carboxylic acids |
US3332301A (en) | 1964-11-24 | 1967-07-25 | Origineers Inc | Gear drive |
CH670914A5 (en) | 1986-09-10 | 1989-07-14 | Landis & Gyr Ag | |
JPH07118270B2 (en) * | 1993-10-25 | 1995-12-18 | 日本電気株式会社 | Carbon nanotube transistor |
US6445006B1 (en) | 1995-12-20 | 2002-09-03 | Advanced Technology Materials, Inc. | Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same |
US5818316A (en) * | 1997-07-15 | 1998-10-06 | Motorola, Inc. | Nonvolatile programmable switch |
US5903010A (en) | 1997-10-29 | 1999-05-11 | Hewlett-Packard Company | Quantum wire switch and switching method |
US6348700B1 (en) | 1998-10-27 | 2002-02-19 | The Mitre Corporation | Monomolecular rectifying wire and logic based thereupon |
US6472705B1 (en) | 1998-11-18 | 2002-10-29 | International Business Machines Corporation | Molecular memory & logic |
US6343700B1 (en) * | 1999-02-05 | 2002-02-05 | Martin J. Slendebroek | Toothbrush holder |
WO2000048195A1 (en) | 1999-02-12 | 2000-08-17 | Board Of Trustees Operating Michigan State University | Nanocapsules containing charged particles, their uses and methods of forming the same |
US6518156B1 (en) | 1999-03-29 | 2003-02-11 | Hewlett-Packard Company | Configurable nanoscale crossbar electronic circuits made by electrochemical reaction |
US6314019B1 (en) * | 1999-03-29 | 2001-11-06 | Hewlett-Packard Company | Molecular-wire crossbar interconnect (MWCI) for signal routing and communications |
US6559468B1 (en) | 1999-03-29 | 2003-05-06 | Hewlett-Packard Development Company Lp | Molecular wire transistor (MWT) |
US6128214A (en) | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
US6256767B1 (en) * | 1999-03-29 | 2001-07-03 | Hewlett-Packard Company | Demultiplexer for a molecular wire crossbar network (MWCN DEMUX) |
ATE481745T1 (en) | 1999-07-02 | 2010-10-15 | Harvard College | ARRANGEMENT CONTAINING NANOSCOPIC WIRE, LOGICAL FIELDS AND METHOD FOR THE PRODUCTION THEREOF |
EP1247089B1 (en) | 1999-12-15 | 2008-07-23 | Board Of Trustees Of The Leland Stanford Junior University | Carbon nanotube devices |
US7335603B2 (en) | 2000-02-07 | 2008-02-26 | Vladimir Mancevski | System and method for fabricating logic devices comprising carbon nanotube transistors |
EP1170799A3 (en) * | 2000-07-04 | 2009-04-01 | Infineon Technologies AG | Electronic device and method of manufacture of an electronic device |
US6515339B2 (en) * | 2000-07-18 | 2003-02-04 | Lg Electronics Inc. | Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method |
US6495905B2 (en) | 2000-11-09 | 2002-12-17 | Texas Instruments Incorporated | Nanomechanical switches and circuits |
US6423583B1 (en) * | 2001-01-03 | 2002-07-23 | International Business Machines Corporation | Methodology for electrically induced selective breakdown of nanotubes |
US6803840B2 (en) | 2001-03-30 | 2004-10-12 | California Institute Of Technology | Pattern-aligned carbon nanotube growth and tunable resonator apparatus |
US6777982B2 (en) | 2001-04-03 | 2004-08-17 | Carnegie Mellon University | Molecular scale latch and associated clocking scheme to provide gain, memory and I/O isolation |
WO2002101917A2 (en) | 2001-06-11 | 2002-12-19 | Johns Hopkins University | Low-power, differential optical receiver in silicon on insulator |
US6673424B1 (en) | 2001-06-19 | 2004-01-06 | Arizona Board Of Regents | Devices based on molecular electronics |
US7259410B2 (en) | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
US6574130B2 (en) | 2001-07-25 | 2003-06-03 | Nantero, Inc. | Hybrid circuit having nanotube electromechanical memory |
US6706402B2 (en) | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
US6924538B2 (en) | 2001-07-25 | 2005-08-02 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
US6911682B2 (en) | 2001-12-28 | 2005-06-28 | Nantero, Inc. | Electromechanical three-trace junction devices |
US6919592B2 (en) | 2001-07-25 | 2005-07-19 | Nantero, Inc. | Electromechanical memory array using nanotube ribbons and method for making same |
US6643165B2 (en) | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
US7566478B2 (en) | 2001-07-25 | 2009-07-28 | Nantero, Inc. | Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US6835591B2 (en) | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
US6835613B2 (en) * | 2001-12-06 | 2004-12-28 | University Of South Florida | Method of producing an integrated circuit with a carbon nanotube |
US6784028B2 (en) | 2001-12-28 | 2004-08-31 | Nantero, Inc. | Methods of making electromechanical three-trace junction devices |
AU2003216070A1 (en) * | 2002-01-18 | 2003-09-02 | California Institute Of Technology | Array-based architecture for molecular electronics |
DE60301582T2 (en) * | 2002-02-09 | 2006-06-22 | Samsung Electronics Co., Ltd., Suwon | Carbon nanotube storage device and method of manufacturing the storage device |
US7049625B2 (en) * | 2002-03-18 | 2006-05-23 | Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. | Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell |
US7335395B2 (en) | 2002-04-23 | 2008-02-26 | Nantero, Inc. | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US6760245B2 (en) | 2002-05-01 | 2004-07-06 | Hewlett-Packard Development Company, L.P. | Molecular wire crossbar flash memory |
US6759693B2 (en) * | 2002-06-19 | 2004-07-06 | Nantero, Inc. | Nanotube permeable base transistor |
US6809465B2 (en) | 2002-08-23 | 2004-10-26 | Samsung Electronics Co., Ltd. | Article comprising MEMS-based two-dimensional e-beam sources and method for making the same |
US7051945B2 (en) * | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
AU2003205098A1 (en) | 2003-01-13 | 2004-08-13 | Nantero, Inc. | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
EP1590498A4 (en) | 2003-01-13 | 2008-01-16 | Nantero Inc | Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US7560136B2 (en) | 2003-01-13 | 2009-07-14 | Nantero, Inc. | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
EP1583853A4 (en) | 2003-01-13 | 2006-12-20 | Nantero Inc | Carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US6919740B2 (en) * | 2003-01-31 | 2005-07-19 | Hewlett-Packard Development Company, Lp. | Molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits, and more complex circuits composed, in part, from molecular-junction-nanowire-crossbar-based inverter, latch, and flip-flop circuits |
US6918284B2 (en) * | 2003-03-24 | 2005-07-19 | The United States Of America As Represented By The Secretary Of The Navy | Interconnected networks of single-walled carbon nanotubes |
US7294877B2 (en) * | 2003-03-28 | 2007-11-13 | Nantero, Inc. | Nanotube-on-gate FET structures and applications |
TW200518337A (en) * | 2003-06-09 | 2005-06-01 | Nantero Inc | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
US7289357B2 (en) | 2003-08-13 | 2007-10-30 | Nantero, Inc. | Isolation structure for deflectable nanotube elements |
WO2005084164A2 (en) | 2003-08-13 | 2005-09-15 | Nantero, Inc. | Nanotube-based switching elements and logic circuits |
US7115960B2 (en) | 2003-08-13 | 2006-10-03 | Nantero, Inc. | Nanotube-based switching elements |
WO2005017967A2 (en) | 2003-08-13 | 2005-02-24 | Nantero, Inc. | Nanotube device structure and methods of fabrication |
EP1665278A4 (en) | 2003-08-13 | 2007-11-07 | Nantero Inc | Nanotube-based switching elements with multiple controls and circuits made from same |
US6969651B1 (en) * | 2004-03-26 | 2005-11-29 | Lsi Logic Corporation | Layout design and process to form nanotube cell for nanotube memory applications |
US7161403B2 (en) * | 2004-06-18 | 2007-01-09 | Nantero, Inc. | Storage elements using nanotube switching elements |
US6955937B1 (en) * | 2004-08-12 | 2005-10-18 | Lsi Logic Corporation | Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell |
US8362525B2 (en) * | 2005-01-14 | 2013-01-29 | Nantero Inc. | Field effect device having a channel of nanofabric and methods of making same |
-
2005
- 2005-01-10 US US11/033,213 patent/US7329931B2/en active Active
- 2005-05-26 WO PCT/US2005/018540 patent/WO2006033683A2/en active Application Filing
- 2005-05-26 EP EP05820729A patent/EP1756954A4/en not_active Withdrawn
- 2005-05-26 CA CA2570429A patent/CA2570429C/en not_active Expired - Fee Related
-
2008
- 2008-02-11 US US12/029,118 patent/US7737471B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20050282515A1 (en) | 2005-12-22 |
EP1756954A4 (en) | 2009-02-18 |
CA2570429C (en) | 2011-09-13 |
WO2006033683A3 (en) | 2007-12-06 |
US20080191742A1 (en) | 2008-08-14 |
EP1756954A2 (en) | 2007-02-28 |
US7737471B2 (en) | 2010-06-15 |
US7329931B2 (en) | 2008-02-12 |
WO2006033683A2 (en) | 2006-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2570429A1 (en) | Receiver circuit using nanotube-based switches and transistors | |
CA2570416A1 (en) | Receiver circuit using nanotube-based switches and logic | |
KR100308708B1 (en) | Method and apparatus for reducing parasitic bipolar current in a silicon-on-insulator transistor | |
WO2005084164A3 (en) | Nanotube-based switching elements and logic circuits | |
CA2570486A1 (en) | Integrated nanotube and field effect switching device | |
WO2006007196A3 (en) | Nanotube-based transfer devices and related circuits | |
US7804332B2 (en) | Circuit configurations having four terminal JFET devices | |
JP4398152B2 (en) | High performance double gate latch | |
WO2005001899A3 (en) | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same | |
WO2005048296A3 (en) | Nanotube-based switching elements with multiple controls and circuits made from same | |
WO2006007203A3 (en) | Nanotube-based logic driver circuits | |
KR20010014764A (en) | Switched body soi(silicon on insulator) circuits and fabrication method therefor | |
JP2005196738A5 (en) | ||
JPH024011A (en) | Analog switch circuit | |
CN101151654B (en) | Load driving circuit | |
CN103124174B (en) | Ic circuit | |
WO2007047166A2 (en) | Output driver circuit with multiple gate devices | |
CN101916762B (en) | Complementary metal oxide semiconductor field effect transistor structure | |
US20020021146A1 (en) | Static logic design for CMOS | |
CN101727955A (en) | Integrated circuit, control method, and use of a circuit for a sleep mode and an operating mode | |
US6064263A (en) | DTCMOS differential amplifier | |
JP2000261306A5 (en) | ||
CN100533733C (en) | Layout circuit with stable guiding current and IC chip with the same | |
US7710148B2 (en) | Programmable switch circuit and method, method of manufacture, and devices and systems including the same | |
JP2007228559A (en) | Switch apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |
Effective date: 20130528 |