CA2569438A1 - Applicator liquid for use in electronic fabrication processes - Google Patents

Applicator liquid for use in electronic fabrication processes Download PDF

Info

Publication number
CA2569438A1
CA2569438A1 CA002569438A CA2569438A CA2569438A1 CA 2569438 A1 CA2569438 A1 CA 2569438A1 CA 002569438 A CA002569438 A CA 002569438A CA 2569438 A CA2569438 A CA 2569438A CA 2569438 A1 CA2569438 A1 CA 2569438A1
Authority
CA
Canada
Prior art keywords
applicator liquid
applicator
nanotubes
solvent
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002569438A
Other languages
French (fr)
Other versions
CA2569438C (en
Inventor
Rahul Sen
Ramesh Sivarajan
Thomas Rueckes
Brent M. Segal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nantero Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2569438A1 publication Critical patent/CA2569438A1/en
Application granted granted Critical
Publication of CA2569438C publication Critical patent/CA2569438C/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/0652—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component containing carbon or carbides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/311—Purifying organic semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y10S977/743—Carbon nanotubes, CNTs having specified tube end structure, e.g. close-ended shell or open-ended tube
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/753—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc. with polymeric or organic binder
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Abstract

Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid containing nanotubes for use in an electronics fabrication process includes a solvent containing a plurality of nanotubes. The nanotubes are at a concentration of greater than 1 mg/L. The nanotubes are pretreated to reduce the level of metallic and particulate impurities to a preselected level, and the preselected metal and particulate impurities levels are selected to be compatible with an electronics manufacturing process. The solvent also is selected for compatibility with an electronics manufacturing process.

Claims (46)

1. An applicator liquid for use in an electronics manufacturing process, comprising:
an electronics-grade solvent and a plurality of nanotubes, wherein the nanotubes are at a concentration of greater than or equal to 10 mg/L, wherein the nanotubes are pretreated to reduce a level of metallic and particulate impurities to a preselected level, and wherein the preselected level is selected to satisfy a criteria of the electronics manufacturing process.
2. The applicator liquid of claim 1, wherein the solvent is selected for compatibility with the electronics manufacturing process.
3. The applicator liquid of claim 1, wherein the solvent is selected for compatibility with a semiconductor manufacturing process.
4. The applicator liquid of any one of claims 1 to 3, wherein the preselected level is selected to be compatible with a semiconducting manufacturing process.
5. The applicator liquid of any one of claims 1 to 4, wherein the nanotubes are substantially separated from one another and are distributed in the solvent without substantial precipitation or flocculation.
6. The applicator liquid of any one of claims 1 to 5, wherein the nanotubes are at a concentration of greater than 100 mg/L.
7. The applicator liquid of any one of claims 1 to 6, wherein the nanotubes are at a concentration of greater than 1000 mg/L.
8. The applicator liquid of any one of claims 1 to 7, wherein the solvent is a non-halogen solvent.
9. The applicator liquid of any one of claims 1 to 8, wherein the solvent is a non-aqueous solvent.
10. The applicator liquid of any one of claims 1 to 9, wherein the solvent comprises ethyl lactate.
11. The applicator liquid of any one of claims 1 to 10, wherein the applicator liquid is surfactant-free.
12. The applicator liquid of any one of claims 1 to 11, wherein the nanotubes are single-walled nanotubes.
13. The applicator liquid of any one of claims 1 to 12, wherein the applicator liquid is substantially free of particulate impurities having a diameter greater than about 500 nm.
14. The applicator liquid of any one of claims 1 to 12, wherein the applicator liquid is substantially free of particulate impurities having a diameter greater than about 200 nm.
15. The applicator liquid of any one of claims 1 to 12, wherein the applicator liquid is substantially free of particulate impurities having a diameter greater than about 100 nm.
16. The applicator liquid of any one of claims 1 to 12, wherein the applicator liquid is substantially free of particulate impurities having a diameter greater than about 45 nm.
17. The applicator liquid of any one of claims 1 to 16, wherein the applicator liquid comprises less than about 1 × 10 18 atoms/cm3 of metal impurities.
18. The applicator liquid of any one of claims 1 to 16, wherein the applicator liquid comprises less than about 1 × 10 18 atoms/cm3 of transition metal impurities.
19. The applicator liquid of any one of claims 1 to 16 and 18, wherein the applicator liquid comprises less than about 1 × 10 18 atoms/cm3 of heavy metal impurities.
20. The applicator liquid of any one of claims 1 to 16, 18 and 19, wherein the applicator liquid comprises less than about 1 × 10 18 atoms/cm3 of group I and group II
metal impurities.
21. The applicator liquid of any one of claims 1 to 16, wherein the applicator liquid comprises less than about 15 × 10 10 atoms/cm3 of metal impurities.
22. The applicator liquid of any one of claims 1 to 16, wherein the applicator liquid comprises less than about 15 × 10 10 atoms/cm3 of transition metal impurities.
23. The applicator liquid of any one of claims 1 to 16 and 22, wherein the applicator liquid comprises less than about 15 × 10 10 atoms/cm3 of heavy metal impurities.
24. The applicator liquid of any one of claims 1 to 16, 22 and 23, wherein the applicator liquid comprises less than about 15 × 10 10 atoms/cm3 of group I and group II
metal impurities.
25. An applicator liquid for use in an electronics manufacturing process, comprising:
an electronics-grade solvent and a plurality of nanotubes, wherein the nanotubes are at a concentration of greater than or equal to 10 mg/L, wherein the nanotubes are pretreated to reduce a level of metal and particulate impurities to a preselected level, wherein the nanotubes are substantially separated from one another and are distributed in the solvent without precipitation or flocculation, and wherein the solvent is selected for compatibility with the electronics manufacturing process.
26. The applicator liquid of claim 25, wherein the preselected level is selected to be compatible with the electronics manufacturing process.
27. The applicator liquid of claim 25 or 26, wherein the solvent is selected for compatibility with a semiconductor manufacturing process.
28. The applicator liquid of any one of claims 25 to 27, wherein the solvent is a non-halogen solvent.
29. The applicator liquid of any one of claims 25 to 28, wherein the solvent is a non-aqueous solvent.
30 30. ~The applicator liquid of any one of claims 25 to 29, wherein the solvent comprises ethyl lactate.
31. ~The applicator liquid of any one of claims 25 to 30, wherein the applicator liquid is surfactant-free.
32. ~The applicator liquid of any one of claims 25 to 31, wherein the nanotubes are at a concentration of greater than 100 mg/L.
33. ~The applicator liquid of any one of claims 25 to 32, wherein the nanotubes are at a concentration of greater than 1000 mg/L.
34. ~The applicator liquid of any one of claims 25 to 33, wherein the nanotubes are single-walled nanotubes.
35. The applicator liquid of any one of claims 25 to 34, wherein the applicator liquid is substantially free of particulate impurities having a diameter greater than about 500 nm.
36. ~The applicator liquid of any one of claims 25 to 34, wherein the applicator liquid is substantially free of particulate impurities having a diameter greater than about 300 nm.
37. ~The applicator liquid of any one of claims 25 to 34, wherein the applicator liquid is substantially free of particulate impurities having a diameter greater than about 100 nm.
38. ~The applicator liquid of any one of claims 25 to 34, wherein the applicator liquid is substantially free of particulate impurities having a diameter greater than about 45 nm.
39. ~The applicator liquid of any one of claims 25 to 38, wherein the applicator liquid comprises less than about 15x10 10 atoms/cm3 of metal impurities.
40. ~The applicator liquid of any one of claims 25 to 38, wherein the applicator liquid comprises less than about 15x10 10 atoms/cm3 of transition metal impurities.
41. ~The applicator liquid of any one of claims 25 to 38 and 40, wherein the applicator liquid comprises less than about 15x10 10 atoms/cm3 of heavy metal impurities.
42. ~The applicator liquid of any one of claims 25 to 38, 40 and 41, wherein the applicator liquid comprises less than about 15x10 10 atoms/cm3 of group I and group II
metal impurities.
43. ~The applicator liquid of any one of claims 25 to 38, wherein the applicator liquid comprises less than about 1x10 18 atoms/cm3 of metal impurities.
44. ~The applicator liquid of any one of claims 25 to 38, wherein the applicator liquid comprises less than about 1x10 18 atoms/cm3 of transition metal impurities.
45. ~The applicator liquid of any one of claims 25 to 38 and 44, wherein the applicator liquid comprises less than about 1x10 18 atoms/cm3 of heavy metal impurities.
46.~ The applicator liquid of any one of claims 25 to 38, 44 and 45, wherein the applicator liquid comprises less than about 1x10 18 atoms/cm3 of group I and group II
metal impurities.
CA2569438A 2004-06-03 2005-05-26 Applicator liquid for use in electronic fabrication processes Active CA2569438C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/860,432 2004-06-03
US10/860,432 US7504051B2 (en) 2003-09-08 2004-06-03 Applicator liquid for use in electronic manufacturing processes
PCT/US2005/018465 WO2006078297A2 (en) 2004-06-03 2005-05-26 Spin-coatable liquid for use in electronic fabrication processes

Publications (2)

Publication Number Publication Date
CA2569438A1 true CA2569438A1 (en) 2006-07-27
CA2569438C CA2569438C (en) 2012-02-21

Family

ID=35446697

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2569438A Active CA2569438C (en) 2004-06-03 2005-05-26 Applicator liquid for use in electronic fabrication processes

Country Status (7)

Country Link
US (1) US7504051B2 (en)
EP (1) EP1751778B1 (en)
JP (1) JP5781718B2 (en)
CN (1) CN101015025B (en)
CA (1) CA2569438C (en)
TW (1) TWI317952B (en)
WO (1) WO2006078297A2 (en)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US7858185B2 (en) 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
WO2005019793A2 (en) 2003-05-14 2005-03-03 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US7504051B2 (en) 2003-09-08 2009-03-17 Nantero, Inc. Applicator liquid for use in electronic manufacturing processes
US7375369B2 (en) 2003-09-08 2008-05-20 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US7556746B2 (en) * 2004-06-03 2009-07-07 Nantero, Inc. Method of making an applicator liquid for electronics fabrication process
US7658869B2 (en) 2004-06-03 2010-02-09 Nantero, Inc. Applicator liquid containing ethyl lactate for preparation of nanotube films
US7652342B2 (en) 2004-06-18 2010-01-26 Nantero, Inc. Nanotube-based transfer devices and related circuits
WO2006121461A2 (en) 2004-09-16 2006-11-16 Nantero, Inc. Light emitters using nanotubes and methods of making same
WO2006065937A2 (en) * 2004-12-16 2006-06-22 Nantero, Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
TWI324773B (en) 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7781862B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US7598127B2 (en) * 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
US7575693B2 (en) * 2005-05-23 2009-08-18 Nantero, Inc. Method of aligning nanotubes and wires with an etched feature
US7541216B2 (en) * 2005-06-09 2009-06-02 Nantero, Inc. Method of aligning deposited nanotubes onto an etched feature using a spacer
US7402770B2 (en) * 2005-06-10 2008-07-22 Lsi Logic Corporation Nano structure electrode design
US7538040B2 (en) 2005-06-30 2009-05-26 Nantero, Inc. Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
US7446044B2 (en) * 2005-09-19 2008-11-04 California Institute Of Technology Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same
US9680686B2 (en) * 2006-05-08 2017-06-13 Sandisk Technologies Llc Media with pluggable codec methods
US20070260615A1 (en) * 2006-05-08 2007-11-08 Eran Shen Media with Pluggable Codec
TWI426531B (en) * 2006-10-12 2014-02-11 Cambrios Technologies Corp Nanowire-based transparent conductors and applications thereof
US7773446B2 (en) 2007-06-29 2010-08-10 Sandisk 3D Llc Methods and apparatus for extending the effective thermal operating range of a memory
US20090113116A1 (en) * 2007-10-30 2009-04-30 Thompson E Earle Digital content kiosk and methods for use therewith
US7759201B2 (en) * 2007-12-17 2010-07-20 Sandisk 3D Llc Method for fabricating pitch-doubling pillar structures
US7887999B2 (en) * 2007-12-27 2011-02-15 Sandisk 3D Llc Method of making a pillar pattern using triple or quadruple exposure
US7746680B2 (en) 2007-12-27 2010-06-29 Sandisk 3D, Llc Three dimensional hexagonal matrix memory array
US7786015B2 (en) * 2008-04-28 2010-08-31 Sandisk 3D Llc Method for fabricating self-aligned complementary pillar structures and wiring
US7944728B2 (en) * 2008-12-19 2011-05-17 Sandisk 3D Llc Programming a memory cell with a diode in series by applying reverse bias
US7781269B2 (en) * 2008-06-30 2010-08-24 Sandisk 3D Llc Triangle two dimensional complementary patterning of pillars
US7733685B2 (en) * 2008-07-09 2010-06-08 Sandisk 3D Llc Cross point memory cell with distributed diodes and method of making same
US8014185B2 (en) * 2008-07-09 2011-09-06 Sandisk 3D Llc Multiple series passive element matrix cell for three-dimensional arrays
US7943515B2 (en) 2008-09-09 2011-05-17 Sandisk 3D Llc Shared masks for x-lines and shared masks for y-lines for fabrication of 3D memory arrays
WO2010080437A2 (en) 2008-12-19 2010-07-15 Sandisk 3D Llc Quad memory cell and method of making same
US7910407B2 (en) * 2008-12-19 2011-03-22 Sandisk 3D Llc Quad memory cell and method of making same
US7923812B2 (en) * 2008-12-19 2011-04-12 Sandisk 3D Llc Quad memory cell and method of making same
US7940554B2 (en) * 2009-04-24 2011-05-10 Sandisk 3D Llc Reduced complexity array line drivers for 3D matrix arrays
US8435798B2 (en) 2010-01-13 2013-05-07 California Institute Of Technology Applications and methods of operating a three-dimensional nano-electro-mechanical resonator and related devices
US8481394B2 (en) 2010-03-04 2013-07-09 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
JP2012004277A (en) 2010-06-16 2012-01-05 Toshiba Corp Nonvolatile semiconductor memory device and method for manufacturing the same
US8284589B2 (en) 2010-08-20 2012-10-09 Sandisk 3D Llc Single device driver circuit to control three-dimensional memory element array
US10069072B2 (en) 2010-09-20 2018-09-04 Nantero, Inc. Nanotube solutions with high concentration and low contamination and methods for purifiying nanotube solutions
US8934292B2 (en) 2011-03-18 2015-01-13 Sandisk 3D Llc Balanced method for programming multi-layer cell memories
KR101360281B1 (en) * 2012-01-12 2014-02-12 한국과학기술원 Single-walled carbon nanotube saturable absorber production via multi-vacuum filtration method
CN108430918B (en) * 2015-12-17 2022-04-08 日本瑞翁株式会社 Fibrous carbon nanostructure dispersion liquid
KR20200143398A (en) * 2018-04-12 2020-12-23 에이전시 포 사이언스, 테크놀로지 앤드 리서치 Carbon purification method and carbon product

Family Cites Families (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2595903B2 (en) * 1994-07-05 1997-04-02 日本電気株式会社 Method for purifying and opening carbon nanotubes in liquid phase and method for introducing functional groups
WO1998005920A1 (en) * 1996-08-08 1998-02-12 William Marsh Rice University Macroscopically manipulable nanoscale devices made from nanotube assemblies
DE69830847T2 (en) * 1997-03-07 2006-01-12 William Marsh Rice University, Houston CARBON FIBERS OUTSIDE UNIQUE CARBON NANOTUBES
US6683783B1 (en) * 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
DE69822918T2 (en) * 1997-04-30 2005-03-31 Jsr Corp. Electronic part and method for its production
KR100277881B1 (en) * 1998-06-16 2001-02-01 김영환 Transistor
US6630772B1 (en) * 1998-09-21 2003-10-07 Agere Systems Inc. Device comprising carbon nanotube field emitter structure and process for forming device
US6368569B1 (en) * 1998-10-02 2002-04-09 University Of Kentucky Research Foundation Method of solubilizing unshortened carbon nanotubes in organic solutions
US6331262B1 (en) * 1998-10-02 2001-12-18 University Of Kentucky Research Foundation Method of solubilizing shortened single-walled carbon nanotubes in organic solutions
US6531513B2 (en) * 1998-10-02 2003-03-11 University Of Kentucky Research Foundation Method of solubilizing carbon nanotubes in organic solutions
US6187823B1 (en) * 1998-10-02 2001-02-13 University Of Kentucky Research Foundation Solubilizing single-walled carbon nanotubes by direct reaction with amines and alkylaryl amines
US6641793B2 (en) * 1998-10-02 2003-11-04 University Of Kentucky Research Foundation Method of solubilizing single-walled carbon nanotubes in organic solutions
US6569595B1 (en) * 1999-02-25 2003-05-27 Kabushiki Kaisha Toshiba Method of forming a pattern
AUPP976499A0 (en) * 1999-04-16 1999-05-06 Commonwealth Scientific And Industrial Research Organisation Multilayer carbon nanotube films
AU6538400A (en) 1999-08-12 2001-03-13 Midwest Research Institute Single-wall carbon nanotubes
US6277318B1 (en) * 1999-08-18 2001-08-21 Agere Systems Guardian Corp. Method for fabrication of patterned carbon nanotube films
JP3948217B2 (en) * 2000-06-05 2007-07-25 昭和電工株式会社 Conductive curable resin composition, cured product thereof, and molded product thereof
US6752977B2 (en) * 2001-02-12 2004-06-22 William Marsh Rice University Process for purifying single-wall carbon nanotubes and compositions thereof
CA2442310A1 (en) * 2001-03-26 2002-10-03 Eikos, Inc. Coatings containing carbon nanotubes
US6723299B1 (en) * 2001-05-17 2004-04-20 Zyvex Corporation System and method for manipulating nanotubes
JP4207398B2 (en) * 2001-05-21 2009-01-14 富士ゼロックス株式会社 Method for manufacturing wiring of carbon nanotube structure, wiring of carbon nanotube structure, and carbon nanotube device using the same
US6878361B2 (en) * 2001-07-10 2005-04-12 Battelle Memorial Institute Production of stable aqueous dispersions of carbon nanotubes
US6896864B2 (en) 2001-07-10 2005-05-24 Battelle Memorial Institute Spatial localization of dispersed single walled carbon nanotubes into useful structures
US7166266B2 (en) * 2001-07-10 2007-01-23 Gb Tech, Inc. Isolation and purification of single walled carbon nanotube structures
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6643165B2 (en) * 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6911682B2 (en) * 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6924538B2 (en) * 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US7259410B2 (en) * 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
WO2003013199A2 (en) * 2001-07-27 2003-02-13 Eikos, Inc. Conformal coatings comprising carbon nanotubes
JP2003089510A (en) * 2001-09-11 2003-03-28 Denso Corp Method for refining carbon nanotube
WO2003029137A2 (en) * 2001-10-01 2003-04-10 Tda Research, Inc. Derivatization and solubilization of insoluble classes of fullerenes
US7812190B2 (en) * 2001-10-01 2010-10-12 Tda Research, Inc. Derivatization and solubilization of fullerenes for use in therapeutic and diagnostic applications
JP4306990B2 (en) * 2001-10-18 2009-08-05 独立行政法人産業技術総合研究所 Nonlinear optical element
EP1440435A2 (en) * 2001-10-19 2004-07-28 Koninklijke Philips Electronics N.V. Optical record carrier and optical scanning device
EP1324411A3 (en) * 2001-12-26 2004-12-22 Mitsubishi Chemical Corporation Composite material for fuel cell separator molding and production method thereof, and fuel cell separator which uses the composite material and production method thereof
US7176505B2 (en) * 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US20040247896A1 (en) * 2001-12-31 2004-12-09 Paul Apen Organic compositions
US6890676B2 (en) * 2002-02-05 2005-05-10 Sony Corporation Fullerene based proton conductive materials
US6515325B1 (en) * 2002-03-06 2003-02-04 Micron Technology, Inc. Nanotube semiconductor devices and methods for making the same
US6889216B2 (en) * 2002-03-12 2005-05-03 Knowm Tech, Llc Physical neural network design incorporating nanotechnology
US6899945B2 (en) * 2002-03-19 2005-05-31 William Marsh Rice University Entangled single-wall carbon nanotube solid material and methods for making same
US7147894B2 (en) * 2002-03-25 2006-12-12 The University Of North Carolina At Chapel Hill Method for assembling nano objects
US7135160B2 (en) * 2002-04-02 2006-11-14 Carbon Nanotechnologies, Inc. Spheroidal aggregates comprising single-wall carbon nanotubes and method for making the same
US6946410B2 (en) * 2002-04-05 2005-09-20 E. I. Du Pont De Nemours And Company Method for providing nano-structures of uniform length
US20040034177A1 (en) * 2002-05-02 2004-02-19 Jian Chen Polymer and method for using the polymer for solubilizing nanotubes
AU2003229333A1 (en) * 2002-05-21 2003-12-12 Eikos, Inc. Method for patterning carbon nanotube coating and carbon nanotube wiring
CN1187607C (en) * 2002-06-10 2005-02-02 武汉大学 Electrochemical sensor and its prepn and use
US6759693B2 (en) * 2002-06-19 2004-07-06 Nantero, Inc. Nanotube permeable base transistor
US6774052B2 (en) * 2002-06-19 2004-08-10 Nantero, Inc. Method of making nanotube permeable base transistor
US7061749B2 (en) * 2002-07-01 2006-06-13 Georgia Tech Research Corporation Supercapacitor having electrode material comprising single-wall carbon nanotubes and process for making the same
JP3975844B2 (en) * 2002-07-04 2007-09-12 株式会社豊田中央研究所 IGBT and its manufacturing method
JP4338948B2 (en) * 2002-08-01 2009-10-07 株式会社半導体エネルギー研究所 Method for producing carbon nanotube semiconductor device
JP4547852B2 (en) * 2002-09-04 2010-09-22 富士ゼロックス株式会社 Manufacturing method of electrical parts
AU2003251307A1 (en) * 2002-09-10 2004-04-30 The Trustees Of The University Pennsylvania Carbon nanotubes: high solids dispersions and nematic gels thereof
US20040077107A1 (en) * 2002-10-17 2004-04-22 Nantero, Inc. Method of making nanoscopic tunnel
US20040075159A1 (en) * 2002-10-17 2004-04-22 Nantero, Inc. Nanoscopic tunnel
US20040087162A1 (en) * 2002-10-17 2004-05-06 Nantero, Inc. Metal sacrificial layer
KR100720628B1 (en) * 2002-11-01 2007-05-21 미츠비시 레이온 가부시키가이샤 Composition containing carbon nanotubes, composite having coating thereof and process for producing them
US20040265550A1 (en) * 2002-12-06 2004-12-30 Glatkowski Paul J. Optically transparent nanostructured electrical conductors
US7858185B2 (en) 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
US7075141B2 (en) * 2003-03-28 2006-07-11 Nantero, Inc. Four terminal non-volatile transistor device
US7294877B2 (en) * 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
US7113426B2 (en) * 2003-03-28 2006-09-26 Nantero, Inc. Non-volatile RAM cell and array using nanotube switch position for information state
US6944054B2 (en) * 2003-03-28 2005-09-13 Nantero, Inc. NRAM bit selectable two-device nanotube array
US6995046B2 (en) * 2003-04-22 2006-02-07 Nantero, Inc. Process for making byte erasable devices having elements made with nanotubes
US7045421B2 (en) * 2003-04-22 2006-05-16 Nantero, Inc. Process for making bit selectable devices having elements made with nanotubes
EP1623470A1 (en) * 2003-04-28 2006-02-08 Zheng-Hong Lu Light-emitting devices with fullerene layer
WO2005019793A2 (en) * 2003-05-14 2005-03-03 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US7274064B2 (en) * 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7280394B2 (en) * 2003-06-09 2007-10-09 Nantero, Inc. Field effect devices having a drain controlled via a nanotube switching element
JP4034703B2 (en) * 2003-07-16 2008-01-16 トヨタ自動車株式会社 Exhaust control device for internal combustion engine
US7340831B2 (en) * 2003-07-18 2008-03-11 Canon Kabushiki Kaisha Method for making liquid discharge head
WO2005017967A2 (en) * 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
EP1665278A4 (en) * 2003-08-13 2007-11-07 Nantero Inc Nanotube-based switching elements with multiple controls and circuits made from same
US7289357B2 (en) * 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
US7115960B2 (en) * 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
WO2005084164A2 (en) * 2003-08-13 2005-09-15 Nantero, Inc. Nanotube-based switching elements and logic circuits
US7504051B2 (en) 2003-09-08 2009-03-17 Nantero, Inc. Applicator liquid for use in electronic manufacturing processes
US7416993B2 (en) * 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US7375369B2 (en) * 2003-09-08 2008-05-20 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US20050052894A1 (en) * 2003-09-09 2005-03-10 Nantero, Inc. Uses of nanofabric-based electro-mechanical switches
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
US7658869B2 (en) 2004-06-03 2010-02-09 Nantero, Inc. Applicator liquid containing ethyl lactate for preparation of nanotube films
US7164744B2 (en) 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7329931B2 (en) 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and transistors
US7161403B2 (en) 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US7652342B2 (en) 2004-06-18 2010-01-26 Nantero, Inc. Nanotube-based transfer devices and related circuits
US7330709B2 (en) 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and logic

Also Published As

Publication number Publication date
JP2008504198A (en) 2008-02-14
US20050269553A1 (en) 2005-12-08
EP1751778A4 (en) 2009-12-23
EP1751778A2 (en) 2007-02-14
WO2006078297A3 (en) 2006-11-30
CN101015025B (en) 2013-03-13
CN101015025A (en) 2007-08-08
TWI317952B (en) 2009-12-01
TW200614272A (en) 2006-05-01
US7504051B2 (en) 2009-03-17
WO2006078297A2 (en) 2006-07-27
CA2569438C (en) 2012-02-21
EP1751778B1 (en) 2017-02-22
JP5781718B2 (en) 2015-09-24

Similar Documents

Publication Publication Date Title
CA2569438A1 (en) Applicator liquid for use in electronic fabrication processes
WO2006085902A3 (en) High purity nanotube fabrics and films
WO2006078298A3 (en) Spin-coatable liquid for formation of high purity nanotube films
Zhang et al. Directed assembly of hybrid nanomaterials and nanocomposites
Ko et al. Liquid-crystalline processing of highly oriented carbon nanotube arrays for thin-film transistors
Klinke et al. Field-effect transistors assembled from functionalized carbon nanotubes
US8906245B2 (en) Material trivial transfer graphene
Hu et al. Ice formation on kaolinite: Lattice match or amphoterism?
Cao et al. Imperceptible and ultraflexible p-type transistors and macroelectronics based on carbon nanotubes
WO2003029354A1 (en) Organic semiconductor material and organic semiconductor element employing the same
CA2729376A1 (en) Method for dispersing and separating nanotubes
WO2008117739A1 (en) Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
WO2007024697A3 (en) Electronic grade metal nanostructures
US20080001141A1 (en) Doped Transparent and Conducting Nanostructure Networks
EP1645542A3 (en) Anisotropic carbon alloy having aligned carbon nanotubes
Mahmoud et al. Thickness dependent enhanced efficiency of polymer solar cells with gold nanorods embedded in the photoactive layer
Jeon et al. Photoconductivity and enhanced memory effects in hybrid C60–graphene transistors
He et al. Evaluating bandgap distributions of carbon nanotubes via scanning electron microscopy imaging of the Schottky barriers
Velázquez et al. Langmuir‐Blodgett Methodology: A Versatile Technique to Build 2D Material Films
Liu et al. Photomodulation of Charge Transport in All‐Semiconducting 2D–1D van der Waals Heterostructures with Suppressed Persistent Photoconductivity Effect
Jin et al. The structure and optical properties of regio-regular poly (3-hexylthiophene) and carboxylic multi-walled carbon nanotubes composite films
Shin et al. Conductivity of films made from single-walled carbon nanotubes in terms of bundle diameter
Aïssa et al. Functionalized single-walled carbon-nanotube-blended P3HT-based high performance memory behavior thin-film transistor devices
Huang et al. Synthesis and structures of aligned branched carbon nanotubes produced by pyrolysis of iron (II) phthalocyanine
Gruznev et al. C60 adsorption onto the one-atomic-layer In films on Si (111) surface

Legal Events

Date Code Title Description
EEER Examination request