CA2538897A1 - Metallization of substrate(s) by a liquid/vapor deposition process - Google Patents
Metallization of substrate(s) by a liquid/vapor deposition process Download PDFInfo
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- CA2538897A1 CA2538897A1 CA 2538897 CA2538897A CA2538897A1 CA 2538897 A1 CA2538897 A1 CA 2538897A1 CA 2538897 CA2538897 CA 2538897 CA 2538897 A CA2538897 A CA 2538897A CA 2538897 A1 CA2538897 A1 CA 2538897A1
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- temperature
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Abstract
A process for depositing a substantially pure, conformal metal layer on one or more substrates through the decomposition of a metal-containing precursor.
During this deposition process, the substrate(s) is maintained at a temperature greater than the decomposition temperature of the precursor while the surrounding atmosphere is maintained at a temperature lower than the decomposition temperature of the precursor. The precursor is dispersed within a transport medium, e.g., a vapor phase. The concentration of the metal-containing precursor(s) in the vapor phase, which also contains liquid therein, can be at a level to provide conditions at or near saturation for the metal precursor(s). In ensuring the aforementioned temperature control between the transport media and substrate, and in maintaining saturation conditions for the transport media, the quality of the deposited metal thin film is markedly improved and the production of by-product metal dust is greatly reduced or substantially eliminated.
During this deposition process, the substrate(s) is maintained at a temperature greater than the decomposition temperature of the precursor while the surrounding atmosphere is maintained at a temperature lower than the decomposition temperature of the precursor. The precursor is dispersed within a transport medium, e.g., a vapor phase. The concentration of the metal-containing precursor(s) in the vapor phase, which also contains liquid therein, can be at a level to provide conditions at or near saturation for the metal precursor(s). In ensuring the aforementioned temperature control between the transport media and substrate, and in maintaining saturation conditions for the transport media, the quality of the deposited metal thin film is markedly improved and the production of by-product metal dust is greatly reduced or substantially eliminated.
Claims (42)
1. A method, comprising:
transporting a metal containing precursor within a transport medium through a chamber to a substrate, wherein the temperature in a transportation space is less than a decomposition temperature of the metal containing precursor;
depositing a metal layer onto the substrate through the decomposition at the substrate of the metal-containing precursor, wherein the temperature at the substrate is greater than the decomposition temperature of the metal containing precursor;
wherein the temperature of the metal containing precursor in the transport space, is directly measured;
and the temperature of the metal containing precursor in the transport space is controlled using the direct measurement.
transporting a metal containing precursor within a transport medium through a chamber to a substrate, wherein the temperature in a transportation space is less than a decomposition temperature of the metal containing precursor;
depositing a metal layer onto the substrate through the decomposition at the substrate of the metal-containing precursor, wherein the temperature at the substrate is greater than the decomposition temperature of the metal containing precursor;
wherein the temperature of the metal containing precursor in the transport space, is directly measured;
and the temperature of the metal containing precursor in the transport space is controlled using the direct measurement.
2. The method according to claim 1, where the transport medium is a vapor.
3. The method according to claim 1, where the transport medium is an atomized spray.
4. The method according to claim 3, where the atomized spray vapor is substantially saturated with the metal-containing precursor.
5. The method according to claim 2, where the vapor is substantially saturated with the metal-containing precursor.
6. The method according to claim 2, wherein the temperature of the substrate is controlled by an induction heating source.
7. The method according to claim 2, wherein the temperature of the metal containing precursor is controlled by pulsing the power of the induction heating source
8. The method according to claim 2, wherein the transport medium contains an inert gas, and wherein the temperature of the metal containing precursor is controlled by modifying a flow rate of the inert gas in the transport medium.
9. The method according to claim 2 wherein the temperature of the metal containing precursor is controlled by varying the concentration of metal-containing precursor in the transport medium.
10. The method according to claim 2, wherein the transport space contains an inert gas, and wherein the temperature of the metal containing precursor is controlled by modifying a flow rate of the inert gas in the transport space.
11. The method according to claim 2, wherein the temperature of the metal containing precursor is controlled by a combination of variables consisting of pulsing the power of the induction heating source, varying a flow rate of inert gas in the transport medium, varying a flow rate of inert gas in the transport space, and varying the concentration of the precursor in the transport medium.
12. The method according to claim 1;
wherein the temperature of the metal containing precursor in the transport space is controlled with a precision of ~ 10°C.
wherein the temperature of the metal containing precursor in the transport space is controlled with a precision of ~ 10°C.
13. The method according to claim 1, where the metal-containing precursor comprises an organoaluminum compound.
14. The method according to claim 1, where the substrate comprises a metal substrate, where the substrate is heated by induction, and where the metal-containing precursor comprises an organoaluminum compound.
15. The method according to claim 1, where the substrate contains a metal.
16. The method according to claim 1 further comprising:
measuring an amount of reaction gas;
stopping the metal-containing precursor from entering the transport space after a predetermined amount of reaction gas has been measured.
measuring an amount of reaction gas;
stopping the metal-containing precursor from entering the transport space after a predetermined amount of reaction gas has been measured.
17. The method according to claim 1 further comprising:
measuring the amount of time the metal layer is deposited on the metal layer, where the metal layer is deposited for at least one minute;
stopping the metal-containing precursor from entering the transport space after a predetermined amount of time;
cooling the substrate after stopping the metal-containing precursor.
measuring the amount of time the metal layer is deposited on the metal layer, where the metal layer is deposited for at least one minute;
stopping the metal-containing precursor from entering the transport space after a predetermined amount of time;
cooling the substrate after stopping the metal-containing precursor.
18. The method according to claim 1 further comprising:
determining a period of active deposition;
measuring a temperature difference between the substrate and the transport medium in the transport space;
maintaining a temperature difference during the period of active deposition.
determining a period of active deposition;
measuring a temperature difference between the substrate and the transport medium in the transport space;
maintaining a temperature difference during the period of active deposition.
19. The method according to claim 16, where the temperature difference is at least one degree.
20. The method according to claim 1, where the transport medium is substantially saturated with the metal containing precursor.
21. A method for the deposition of an aluminum layer onto a substrate comprising:
heating a substrate with an inductive energy source;
transporting an aluminum-containing precursor in a liquid containing vapor to a transport space;
depositing aluminum on the substrate to form an aluminum layer on the surface of the substrate;
measuring the temperature of the vapor in the transport space;
controlling the temperature of the substrate such that the temperature of the substrate is above the aluminum containing precursor decomposition temperature;
controlling the temperature of the vapor such that the temperature of the vapor is maintained below the decomposition temperature in the transport space.
heating a substrate with an inductive energy source;
transporting an aluminum-containing precursor in a liquid containing vapor to a transport space;
depositing aluminum on the substrate to form an aluminum layer on the surface of the substrate;
measuring the temperature of the vapor in the transport space;
controlling the temperature of the substrate such that the temperature of the substrate is above the aluminum containing precursor decomposition temperature;
controlling the temperature of the vapor such that the temperature of the vapor is maintained below the decomposition temperature in the transport space.
22. The method according to claim 21, where the substrate comprises metal.
23. The method according to claim 21, where controlling the temperature of the substrate is achieved by pulsing the power of the inductive energy source.
24. The method according to claim 21, where the liquid-containing vapor is substantially saturated with the aluminum-containing precursor.
25. The method according to claim 21, where the aluminum-containing precursor is in the form of an atomized spray.
26. The method according to claim 21, where controlling the temperature of the substrate is performed by an induction heating source.
27. The method according to claim 21, where controlling the temperature of the vapor is achieved by pulsing the power of an induction heating source
28. The method according to claim 21, where the vapor phase contains an inert gas, and where controlling the temperature of the vapor is achieved by modifying a flow rate of the inert gas in the vapor.
29. The method according to claim 21, where the transport space contains an inert gas, and where controlling the temperature of the transport medium is achieved by modifying a flow rate of the inert gas in the transport space.
30. The method according to claim 21, where controlling the temperature of the vapor phase includes varying the concentration of aluminum containing precursor in the vapor.
31. The method according to claim 21, where controlling the temperature of the vapor phase is achieved by a combination of variables consisting of pulsing the power of an induction heating source, varying a flow rate of inert gas in the transport medium, varying a flow rate of inert gas in the transport space, and varying the concentration of the precursor in the transport medium.
32. The method according to claim 21, wherein the temperature of the metal containing precursor in the transport space is controlled within 10°C.
33. The method according to claim 21 further comprising:
measuring an amount of reaction gas;
stopping the aluminum containing precursor from entering the transport space after a predetermined amount of reaction gas has been accumulated.
measuring an amount of reaction gas;
stopping the aluminum containing precursor from entering the transport space after a predetermined amount of reaction gas has been accumulated.
34. The method according to claim 21 further comprising:
measuring the amount of time the aluminum layer is deposited on the metal layer, where the metal layer is deposited for at least one minute;
stopping the aluminum containing precursor from entering the transport space after a predetermined amount of time;
cooling the substrate after stopping the aluminum containing precursor.
measuring the amount of time the aluminum layer is deposited on the metal layer, where the metal layer is deposited for at least one minute;
stopping the aluminum containing precursor from entering the transport space after a predetermined amount of time;
cooling the substrate after stopping the aluminum containing precursor.
35. The method according to claim 21 further comprising:
determining a period of active deposition;
measuring a temperature difference between the substrate and the transport medium in the transport space;
maintaining a temperature difference during the period of active deposition.
determining a period of active deposition;
measuring a temperature difference between the substrate and the transport medium in the transport space;
maintaining a temperature difference during the period of active deposition.
36. The method according to claim 34, where the temperature difference is at least one degree.
37. An uniformly coated substrate comprising:
a substrate;
a metallic coating disposed on the substrate, where the metallic coating is substantially free of metallic dust particles, and where the metallic coating is corrosion resistant such that the coating can withstand at least 24 hours to red corrosion as determined by the ASTM B-117 standard;
the metallic coating bonded to the substrate as a result of a chemical reaction between a precursor compound kept below a decomposition temperature and the substrate kept above the decomposition temperature, where the metallic coating is substantially pure.
a substrate;
a metallic coating disposed on the substrate, where the metallic coating is substantially free of metallic dust particles, and where the metallic coating is corrosion resistant such that the coating can withstand at least 24 hours to red corrosion as determined by the ASTM B-117 standard;
the metallic coating bonded to the substrate as a result of a chemical reaction between a precursor compound kept below a decomposition temperature and the substrate kept above the decomposition temperature, where the metallic coating is substantially pure.
38. The substrate in claim 37, where the substrate comprises a metal.
39. The substrate in claim 37, where the metallic coating comprises aluminum.
40. The substrate in claim 37, where the precursor is contained in a transport medium , and where the transport medium contains a liquid.
41. A product fabricated by the process of:
providing a liquid-containing transport medium, where the transport medium includes a metal containing precursor;
heating the transport medium to a temperature below a decomposition temperature of the metal-containing precursor;
transporting the transport medium to a transport space;
depositing the precursor onto the substrate to form the metal layer;
measuring the temperature of the transport medium in the transport space;
controlling the temperature of substrate such that the temperature of the substrate is above the decomposition temperature of the metal-containing precursor;
controlling the temperature of the transport medium in the transport space such that the temperature of the transport medium is maintained below the decomposition temperature of the metal-containing precursor.
providing a liquid-containing transport medium, where the transport medium includes a metal containing precursor;
heating the transport medium to a temperature below a decomposition temperature of the metal-containing precursor;
transporting the transport medium to a transport space;
depositing the precursor onto the substrate to form the metal layer;
measuring the temperature of the transport medium in the transport space;
controlling the temperature of substrate such that the temperature of the substrate is above the decomposition temperature of the metal-containing precursor;
controlling the temperature of the transport medium in the transport space such that the temperature of the transport medium is maintained below the decomposition temperature of the metal-containing precursor.
42. A product fabricated by the process of:
heating a substrate with an inductive energy source;
transporting an aluminum-containing precursor in a liquid containing vapor to a transport space;
depositing aluminum on the substrate to form an aluminum layer on the surface of the substrate;
measuring the temperature of the vapor in the transport space;
controlling the temperature of the substrate such that the temperature of the substrate is above the aluminum containing precursor decomposition temperature;
controlling the temperature of the vapor phase such that the temperature of the vapor phase is maintained below the decomposition temperature in the transport space.
heating a substrate with an inductive energy source;
transporting an aluminum-containing precursor in a liquid containing vapor to a transport space;
depositing aluminum on the substrate to form an aluminum layer on the surface of the substrate;
measuring the temperature of the vapor in the transport space;
controlling the temperature of the substrate such that the temperature of the substrate is above the aluminum containing precursor decomposition temperature;
controlling the temperature of the vapor phase such that the temperature of the vapor phase is maintained below the decomposition temperature in the transport space.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US50464103P | 2003-09-19 | 2003-09-19 | |
| US60/504,641 | 2003-09-19 | ||
| PCT/US2004/030376 WO2005028704A1 (en) | 2003-09-19 | 2004-09-16 | Metallization of substrate (s) by a liquid/vapor deposition process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2538897A1 true CA2538897A1 (en) | 2005-03-31 |
| CA2538897C CA2538897C (en) | 2011-08-09 |
Family
ID=34375529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2538897A Expired - Fee Related CA2538897C (en) | 2003-09-19 | 2004-09-16 | Metallization of substrate(s) by a liquid/vapor deposition process |
Country Status (17)
| Country | Link |
|---|---|
| US (1) | US7387815B2 (en) |
| EP (1) | EP1664379B1 (en) |
| JP (2) | JP5193466B2 (en) |
| KR (1) | KR101162077B1 (en) |
| CN (1) | CN1853003B (en) |
| AT (1) | ATE466119T1 (en) |
| BR (1) | BRPI0414547A (en) |
| CA (1) | CA2538897C (en) |
| DE (1) | DE602004026889D1 (en) |
| ES (1) | ES2345109T3 (en) |
| HK (1) | HK1096129A1 (en) |
| MX (1) | MXPA06003060A (en) |
| PL (1) | PL1664379T3 (en) |
| RU (1) | RU2330122C2 (en) |
| TW (1) | TWI349953B (en) |
| WO (1) | WO2005028704A1 (en) |
| ZA (1) | ZA200603081B (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007004570A1 (en) | 2007-01-30 | 2008-07-31 | Daimler Ag | Shiny coatings for car wheels made from light metal alloys or steel comprises at least one layer of aluminum or aluminum alloy applied directly to surface of wheel |
| WO2010049024A1 (en) * | 2008-10-31 | 2010-05-06 | Oerlikon Solar Ip Ag, Truebbach | Precursor recycling |
| DE102008055147A1 (en) | 2008-12-23 | 2010-07-01 | Eisenwerk Erla Gmbh | Process for coating components exposed to temperature and / or hot media as well as component subjected to hot media and / or temperature |
| US9528182B2 (en) * | 2009-06-22 | 2016-12-27 | Arkema Inc. | Chemical vapor deposition using N,O polydentate ligand complexes of metals |
| DE102009037116A1 (en) | 2009-07-31 | 2011-02-03 | Elringklinger Ag | Spring steel-sheet metal plate i.e. functional layer, for cylinder head gasket, has corrosion-protection coating at region of main surface of plate, where plate is made of steel that comprises structure with specific percentage of pearlite |
| KR20120043002A (en) * | 2009-07-31 | 2012-05-03 | 아크조 노벨 케미칼즈 인터내셔널 비.브이. | Process for the preparation of a coated substrate, coated substrate, and use thereof |
| US20110206844A1 (en) * | 2010-02-24 | 2011-08-25 | Jacob Grant Wiles | Chromium-free passivation of vapor deposited aluminum surfaces |
| WO2013106006A1 (en) * | 2011-03-15 | 2013-07-18 | Directed Vapor Technologies International | Method for applying aluminum alloy coatings for corrosion protection of steel |
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2004
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| RU2330122C2 (en) | 2008-07-27 |
| US7387815B2 (en) | 2008-06-17 |
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| KR101162077B1 (en) | 2012-07-03 |
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| DE602004026889D1 (en) | 2010-06-10 |
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| PL1664379T3 (en) | 2010-10-29 |
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| JP2011236507A (en) | 2011-11-24 |
| WO2005028704A1 (en) | 2005-03-31 |
| TWI349953B (en) | 2011-10-01 |
| ZA200603081B (en) | 2007-07-25 |
| CN1853003B (en) | 2010-04-28 |
| ES2345109T3 (en) | 2010-09-15 |
| JP2007505994A (en) | 2007-03-15 |
| ATE466119T1 (en) | 2010-05-15 |
| EP1664379B1 (en) | 2010-04-28 |
| MXPA06003060A (en) | 2006-05-31 |
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