CA2447288A1 - Nitride phosphor and method for preparation thereof, and light emitting device - Google Patents

Nitride phosphor and method for preparation thereof, and light emitting device Download PDF

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Publication number
CA2447288A1
CA2447288A1 CA002447288A CA2447288A CA2447288A1 CA 2447288 A1 CA2447288 A1 CA 2447288A1 CA 002447288 A CA002447288 A CA 002447288A CA 2447288 A CA2447288 A CA 2447288A CA 2447288 A1 CA2447288 A1 CA 2447288A1
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Canada
Prior art keywords
phosphor
group
light
elements
light emitting
Prior art date
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CA002447288A
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French (fr)
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CA2447288C (en
Inventor
Hiroto Tamaki
Masatoshi Kameshima
Suguru Takashima
Motokazu Yamada
Takahiro Naitou
Kazuhiko Sakai
Yoshinori Murazaki
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Nichia Corp
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Individual
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Priority claimed from JP2002080879A external-priority patent/JP4009828B2/en
Priority claimed from JP2002126566A external-priority patent/JP2003321675A/en
Priority claimed from JP2002148555A external-priority patent/JP4221950B2/en
Priority claimed from JP2002167166A external-priority patent/JP4868685B2/en
Priority claimed from JP2002226855A external-priority patent/JP4280038B2/en
Priority claimed from JP2002348386A external-priority patent/JP4214768B2/en
Priority claimed from JP2002348387A external-priority patent/JP4218328B2/en
Application filed by Individual filed Critical Individual
Publication of CA2447288A1 publication Critical patent/CA2447288A1/en
Publication of CA2447288C publication Critical patent/CA2447288C/en
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
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    • C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
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Abstract

The present invention is directed to a phosphor containing a comparatively large red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula L X M Y N((2/3)x+(4/3)Y):R or L X M Y O Z N((2/3)X+(4/3)Y.cndot.(2/3)Z):R wherein L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.; contains the another elements.

Claims (110)

1. A nitride phosphor having a general formula L X M Y N((2/3)X+(4/3)Y):R or a general formula L X M Y O Z N((2/3)X-(4/3)Y-(2/3)Z):R in which L is at least one or more elements selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more elements selected from the Group IV
Elements in which Si is essential among C, Si and Ge, and R is at least one or more elements selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu, said nitride phosphor absorbing at least a portion of light having a first luminescence spectrum in which a peak wave length is 500nm or less and emitting light having a second luminescence spectrum which has at least one or more of peaks at a range of 520 to 780nm; is characterized in further containing at least one or more of different elements selected from the Group I Elements consisting of Li, Na, K, Rb and Cs.
2. A nitride phosphor having a general formula L X M Y N((2/3)X+(4/3)Y):R or a general formula L X M Y O Z N((2/3)X+(4/3)Y-(2/3)Z):R in which L is at least one or more elements selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more elements selected from the Group IV
Elements in which Si is essential among C, Si and Ge, and R is at least one or more elements selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu, said nitride phosphor absorbing at least a portion of light having a first luminescence spectrum in which a peak wave length is 500nm or less and emitting light having a second luminescence spectrum which has at least one or more peaks at a range of 520 to 780nm; is characterized in further containing at least one or more elements selected from the Group V
Elements consisting of V, Nb and Ta; the Group VI Elements consisting of Cr, Mo and W, the Group VII Elements consisting of Re and the Group VIII
Elements consisting of Fe, Co, Ir, Ni, Pd, Pt and Ru.
3. A nitride phosphor having a general formula L X M Y O Z N((2/3)X+(4/3)Y):R
or a general formula L X M Y O Z N((2/3)X+(4/3)Y-(2/3)Z):R in which L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu, said nitride phosphor absorbing at least a portion of light having a first luminescence spectrum in which a peak wave length is 500nm or less and emitting light having a second luminescence spectrum which has at least one or more of peaks at a range of 520 to 780nm; is characterized in further containing at least one or more elements selected from the Group I Elements consisting of Cu, Ag and Au, the Group III Elements consisting of B, Al, Ga and In, the Group IV
Elements consisting of Ti, Zr, Hf, Sn and Pb, the group V Elements consisting of P, Sb and Bi, and the Group VI Elements consisting of S.
4. The nitride phosphor as in one of claims 1 to 3; made by firing under a reducing atmosphere.
5. A process for production of a nitride phosphor comprising;
a first step of wet mixing process wherein an oxide of R (R is at least one or more elements selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.) is mixed with a compound which contains at least one or more elements selected from the Group I Elements consisting of Li, Na, K, Rb, Cs, Cu, Ag and Au, the Group III Elements consisting of B, Al, Ga and In, the Group IV
Elements consisting of Ti, Zr, Hf, Sn and Pb, the Group V Elements consisting of V, Nb, Ta, P, Sb and Bi, the Group VI Elements consisting of Cr, Mo, W and S, the Group VII Elements consisting of Re and the Group VIII
Elements consisting of Fe, Co, Ir, Ni, Pd, Pt and Ru, a second step of firing the mixture obtained in the first step, a third step in which the mixture obtained by the second step is mixed with at least one of the nitride of L (L is at least one or more elements selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn), the nitride of and the oxide of M (M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge),and a fourth step of firing the mixture obtained from the third step in a reducing atmosphere.
6. The process for production of a nitride phosphor according to claim 5;

wherein at least one of said second step and said fourth step carries out firing using a crucible which contains at least one or more elements selected from the Group I Elements consisting of Li, Na, K, Rb, Cs, Cu, Ag and Au, the Group III Elements consisting of B, Al, Ga and In, the Group IV
Elements consisting of Ti, Zr, Hf, Sn and Pb, the Group V Elements consisting of V, Nb, Ta, P, Sb and Bi, the Group VI Elements consisting of Cr, Mo, W and S, the Group VII Elements consisting of Re and the Group VIII
Elements consisting of Fe, Co, Ir, Ni, Pd, Pt and Ru.
7. The process for production of a nitride phosphor according to claims or 6;

wherein at least one of said second step and said fourth step carries out bring in a furnace made of a material contains at least one or more elements selected from the Group I Elements consisting of Li, Na, K, Rb, Cs, Cu, Ag and Au, the Group III Elements consisting of B, Al, Ga and In, the Group IV Elements consisting of Ti, Zr, Hf, Sn and Pb, the Group V
Elements consisting of V, Nb, Ta, P, Sb and Bi, the Group VI Elements consisting of Cr, Mo, W and S, the Group VII Elements consisting of Re and the Group VIII Elements consisting of Fe, Co, Ir, Ni, Pd, Pt and Ru.
8. The nitride phosphor produced by the process as in one of clams 5 to 7;

wherein said phosphor contains at least R (R is at least one or more elements selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.), L (L is at least one or more elements selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and. Zn), M (M is at least one or more elements selected from the Group IV Elements in which Si is essential. among C, Si and Ge), and at least one or more elements selected from the Group I Elements consisting of Li, Na, K, Rb, Cs, Cu, Ag and Au, the Group III Elements consisting of B, Al, Ga and In, the Group IV Elements consisting of Ti, Zr, Hf, Sn and Pb, the Group V Elements consisting of V, Nb, Ta, P, Sb and Bi, the Group VI Elements consisting of Cr, Mo, W and S, the Group VII
Elements consisting of Re and the Group VIII Elements consisting of Fe, Co, Ir, Ni, Pd, Pt and Ru.
9. A light emitting device comprising;
a light emitting element which emits light having a first luminescence spectrums which has a peak wave length of 500nm or less and, a phosphor which absorbs at least a portion of light having the first luminescence spectrum and emits light having a second luminescence spectrum which has at least one or more of peaks at a range of 520 to 780nm, wherein said phosphor is a phosphor as in one of claims 1 to 4 and 8.
10. The light emitting device according to claim 9;
wherein said device further has one or more phosphors which absorb at least a portion of light having said first luminescence spectrum and at least a portion of light having said second luminescence spectrum and which emit light having the third luminescence spectrum that has at least one or more of peak wave lengths from the blue range to the green range, the yellow range, and the red range.
11. The light emitting device according to claim 10;
wherein said phosphor emitting the light of said third luminescence spectrum is at least any one or more of a yttrium-aluminum oxide phosphor activated by at least cerium, a yttrium-gadolinium-aluminum oxide phosphor activated by at least cerium, and a yttrium-gallium-aluminum oxide phosphor activated by at least cerium.
12. The light emitting device as in one of claims 9 to 11;
wherein said device emits white light by mixing portions of 2 or more kinds of light emitted from said light emitting element, emitted from the phosphor having said second luminescence spectrum, and emitted from the phosphor having said third luminescence spectrum.
13. A nitride phosphor which is activated by at least one or more rare earth elements selected from a group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu, and which comprises at least one or more of the Group II Elements selected from a group consisting of Be, Mg, Ca, Sr, Ba and Zn, at least one or more of the Group IV Elements selected from a group consisting of C, Si, Ge, Sn, Ti, Zr and Hf, and N; is characterized by containing B in the range of 1ppm to 10000ppm.
14. The nitride phosphor according to claim 13; further comprising O.
15. A nitride phosphor having a general formula L X M Y N((2/3)X+(4/3)Y):R or a general formula L X M Y Z N((2/3)X+(4/3)Y-(2/3)Z):R wherein L is at least one or more of the Group II Elements selected from a group consisting of Be, Mg, Ca, Sr, Ba and Zn. M is at least one or more of the Group IV Elements selected from a group consisting of C, Si, Ge, S:n, Ti, Zr, Hf. R is at least one or more of the rare earth elements selected from a group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu. X, Y and Z are 0.5 <= X
<= 3, 1.5 <= Y <= 8, and 0 < Z <= 3; is characterized by containing B in the range of 1ppm to 10000ppm.
16. A nitride phosphor which absorbs a portion of light having a first luminescence spectrum and emits light having a second luminescence spectrum at a range different from said first luminescence spectrum is characterized in that the luminescence brightness and afterglow are controlled by the amount of B.
17. The nitride phosphor as in one of claims 13 to 17; of which crystal configuration is monoclinic or orthorhombic.
18. The nitride phosphor according to claims 13 or 15;
wherein said rare earth element is one or more of elements in which Eu is essential.
19. The nitride phosphor as in one of claims 13 to 18; further comprising one or more elements of the Group I Elements selected from a group consisting of Li, Na, K, Rb and Cs in the range of 0.1ppm to 500ppm.
20. The nitride phosphor as in one of claims 13 to 19; further comprising one or more elements selected from the Group I Elements consisting of Cu, Ag and Au, the Group III Elements consisting of Al, Ga and In, the Group IV Elements consisting of Ti, Zr, Hf, Sn and Pb, the Group V Elements consisting of P, Sb and Bi, and the Group VI Element consisting of S in the range of 0.1ppm to 500ppm.
21. The nitride phosphor as in one of claims 13 to 20; further comprising either the elements of Ni or Cr in the range of 1ppm to 500ppm.
22. The nitride phosphor as in one of claims 13 to 21; of which mean particle diameter is in a range of 2 µm to 15 µm.
23. A light emitting device comprising an excitation light source which emits light of a short wave length range of from near ultra violet to visible light and a phosphor which absorbs at least a portion of light from said excitation light source and emits light having a longer wave length range than light emitted from the excitation light source;
wherein said phosphor comprises a nitride phosphor as in one of claims 13 to 22.
24. The light emitting device according to claim 23;
wherein said phosphor further comprises at least one or more of a phosphor emitting blue light, a phosphor emitting green light and a phosphor emitting yellow light.
25. The light emitting device according to claim 23;
wherein said excitation light source is a semiconductor light emitting element.
26. The light emitting device as in one of claims 23 to 25;
wherein a white light is emitted by mixing a portion of light emitted from said excitation light source which transmits between the particles of said phosphor with a portion of light emitted from said phosphor which is subjected to wavelength conversion by the light emitted from said excitation light source.
27. A nitride phosphor which absorbs at least a portion of light having the first luminescence spectrum and emits light having the second luminescence spectrum which is different from said first luminescence spectrum is characterized by being an L-M-N:Eu, WR-base phosphor (wherein L is at least one or more elements selected from the Group II
Elements consisting of Be, Mg, Ca, Sr, Ba and Zn. M is at least one or more elements selected from the GroupIV Elements consisting of C, Si, Ge, Sn, Ti, Zr and Hf. N is nitrogen. Eu is europium. WR is a rare earth element other than Eu.).
28. A nitride phosphor which absorbs at least a portion of light having a first luminescence spectrum and emits light having a second luminescence spectrum which is different from said first luminescence spectrum; is characterized by being an L-M-O-N:Eu, WR (wherein L is at least one or more elements selected from the Group II Elements consisting of Be, Mg, Ca, Sr, Ba and Zn. M is at least one or more elements selected from the Group IV Elements consisting of C, Si, Ge, Sn, Ti, Zr and Hf. O is oxygen.
N is nitrogen. Eu is europium. WR is a rare earth element other than Eu.).
29. A nitride phosphor which absorbs at least a portion of light having the first luminescence spectrum and emits light having the second luminescence spectrum which is different from said first luminescence spectrum is characterized by being a Ca-Si-N:Eu, WR-base, or Sr-Si-N:Eu, WR-base, or Sr-Ca-Si-N:Eu, WR-base silicon nitride (wherein WR is a rare earth element other than Eu.).
30. A nitride phosphor which absorbs at least a portion of light having the first luminescence spectrum and emits light having the second luminescence spectrum which is different from said first luminescence spectrum; is characterized by being a Ca-Si-O-N:Eu, WR-base, or Sr-Si-O-N:Eu, WR-base, or Sr-Ca-Si-O-N:Eu, WR-base silicon nitride (wherein WR is a rare earth element other than Eu.).
31. The nitride phosphor as in one of claims 27 to 30;
wherein said phosphor contains at least one or more elements among Y, La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er and Lu as above-mentioned WR.
32. The nitride phosphor as in one of claims 27 to 31;
wherein an amount of said WR added is not exceeding 10.0% by weight.
33. The nitride phosphor according to claims 28 or 30;
wherein the content of said O is not exceeding 3.0% by weight of the total composition.
34. The nitride phosphor as in one of claims 27 to 33; further comprising Mn.
35. The nitride phosphor according to claim 34;
wherein the additional amount of said Mn is in a range of 0.001 to 0.3mol based on said L.
36. The nitride phosphor according to claim 34;
wherein the additional amount of said Mn is in a range of 0.0025 to 0.03mol based on said L.
37. The nitride phosphor as in one of claims 34 to 30;
wherein the amount of Mn is 5000ppm or less.
38. The nitride phosphor as in one of claims 27 to 37; further comprising at least one or more elements selected from the group consisting of Mg, Sr, Ba, Zn, Ca, Ga, In, B, Al, Cu, Li, Na, K, Re, Ni, Cr, Mo, O and Fe.
39. The nitride phosphor as in one of claims 27 to38; of which particle size is 3 µ m or greater.
40. A light emitting device comprising a light emitting element which emits light having a first luminescence spectrum and a phosphor which absorbs at least a portion of light of said first luminescence spectrum and emits light having a second luminescence spectrum which is different from said first luminescence spectrum is characterized by using the phosphor as in one of claims 27 to 39.
41 The light emitting device according to claim 40;
wherein said phosphor comprises at least one selected from the group comprising a yttrium-aluminum oxide phosphor activated by cerium, a yttrium-gadolinium-aluminum oxide phosphor activated by cerium, and a yttrium-gallium-aluminum oxide phosphor activated by cerium.
42. A phosphor which absorbs at least a portion of light having a first luminescence spectrum and emits light having a second luminescence spectrum which is different from said first luminescence spectrum; is characterized by being a Sr-Ca-Si-N:R-base silicon nitride having Mn wherein R is one or more rare earth elements in which Eu is essential.
43. A phosphor which absorbs at least a portion of light having a first luminescence spectrum and emits light having a second luminescence spectrum which is different from said first luminescence spectrum is characterized by being a Sr-Si-N:R-base silicon nitride having Mn wherein R is one or more rare earth elements in which Eu is essential.
44. A phosphor which absorbs at least a portion of light having a first luminescence spectrum and emits light having a second luminescence spectrum which is different from said first luminescence spectrum is characterized by being a Ca-Si-N:R-base silicon nitride having Mn wherein R is one or more rare earth elements in which Eu is essential.
45. The phosphor as in one of claims 42 to 44; further comprising O.
46. The phosphor according to claim 45; wherein a content of said O is 3% or less by weight based on the total amount of the compositions.
47. The phosphor as in one of claims 42 to 46; further comprising at least one or more elements selected from the group consisting of Mg, Sr, Ca, Ba, Zn, B, Al, Cu, Mn, Cr and Ni.
48. The phosphor according to claim 42; wherein the molar ratio of Sr to Ca is Sr : Ca = 1 to 9 : 9 to 1.
49. The phosphor according to claim 42; wherein the molar ratio of Sr to Ca is Sr = Ca = 1 : 1.
50. The phosphor as in one of claims 42 to 49; wherein a compounding amount of Eu in said phosphor is in a range of 0.003 to 0.5mol based on Sr-Ca, Sr and Ca.
51. The phosphor as in one of claims 42 to 49; wherein the content of Eu in said phosphor is in the range of 0.005 to 0.1mol based on Sr-Ca, Sr and Ca.
52. The phosphor as in one of claims 42 to 51; wherein the content of Mn in said phosphor is in a range of 0.001 to 0.3mol based on Sr-Ca, Sr and Ca.
53. The phosphor as in one of claims 42 to 51; wherein the content of Mn in said phosphor is in a range of 0.0025 to 0.03mol based on Sr-Ca, Sr and Ca.
54. The phosphor consists of two or more phosphors selected from the group consisting of the phosphor according to claim 42, the phosphor according to claim 43 and the phosphor according to claim 44.
55. The phosphor as in one of claims 42 to 51; of which a particle diameter is 3 µm or greater.
56. The phosphor as in one of claims 42 to 51; wherein the content of Mn is 5000ppm or less.
57. A light emitting device comprising a light emitting device which emits light having a first luminescence spectrum and a phosphor which absorbs at least a portion of light of said first luminescence spectrum and emits Iight having a second luminescence spectrum which is different from said first luminescence spectrum9 is characterized by using the phosphor as in one of claims 42 to 56.
58. The light emitting device according to claim 57;
wherein said phosphor comprises at least one selected from the group comprising a yttrium-aluminum oxide phosphor activated by cerium;
a yttrium-gadolinium-aluminum oxide phosphor activated by cerium, and a yttrium-gallium-aluminum oxide phosphor activated by cerium,
59. A nitride phosphor which contains at least nitrogen, and absorbs at least a portion of light having a first luminescence spectrum and emits light having a second luminescence spectrum which is different from said first luminescence spectrum: is characterized by hawing a general formula LXMYN((2/3)X+(4/3)Y):R (wherein L is at least one or more elements selected from the Group II Elements consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Hg, M is at least one or more elements selected from the Group IvV
Elements consisting of C, Si, Ge, Sn, Ti, Zr and Hf, and R is an activator, 0.5 ~ X ~ 3.1, 1.5 ~ Y ~ 8.), and containing at least one or more elements selected from a group consisting of Mg, Sr, Ba, Zn, Ca, Ga, In, B, AI, Cu, Mn, Li, Na, K, Re, Ni, Cr, Mo, O and Fe.
60. The nitride phosphor according to claim 59; is characterized by having a general formula LXMyN((2/3)X+(4/3)Y):R (wherein L is at least one or more elements selected from the Group II Elements consisting of Mg, Ca, Sr and Ba, M is Si, and R is an activator, 0.5 ~ X~ 3.1, 1.5~Y~ 8.), and containing at least one or more elements selected from a group consisting of Mg, Sr, Ba, Zn, B, Al, Cu, Mn, Cr, O and Ni.
61. The nitride phosphor according to claims 59 or 60;
wherein said R is Eu.
62. The nitride phosphor according to claims 59 or 60;
wherein said R is at least one or more elements among Mn, B, Ce, Mg, Cu, Al and Eu.
63. The nitride phosphor according to claims 59 or 60;
wherein said X and Y are X = 2 and Y = 5.
64. The nitride phosphor according to claims 59 or 60;
wherein said X and Y are X =1 and Y = 7.
65. The nitride phosphor as in one of claims 59 to 62; wherein said L and said R have a molar ratio of L : R = 1 : 0.001 to 1.
66. The nitride phosphor as in one of claims 59 to 65; of which a mean particle diameter is in a range of 0.1 to 10 µm.
67. The nitride phosphor as in one of claims 59 to 66;
wherein said second luminescence spectrum has at least one or more peaks in the yellow to red range.
68. The nitride phosphor as in one of claims 59 to 66;
wherein said second luminescence spectrum has at least one or more peaks within a wave length range of 520nm to 780nm.
69. A process for production of a nitride phosphor which has a general formula LxMYN((2/3)X+(4/8)Y):R (wherein L is at least one or more elements selected from the Group II Elements consisiting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Hg, M is at least one or more elements selected from the Group IV
Elements consisting of C, Si, Ge, Sn, Ti, Zr and Hf, and R is an activator.), and contains at least one or more elements selected from a group consisting of Mg, Sr, Ba, Zn, Ca, Ga, In, B, Al, Cu, Mn, Li, Na, K, Re, Ni, Cr, Mo, O and Fe; characterized by having a step of bring said raw materials in ammonia atmosphere.
70. The process for production of said nitride phosphor according to claim 69;
wherein said step of firing is carried out using a crucible made of boron nitride.
71. A light emitting device comprising; a light emitting element which emits light having a first luminescence spectrum and a phosphor which absorbs at least a portion of light of said first luminescence spectrum and emits light having a second luminescence spectrum which is different from said first luminescence spectrum is characterized by using the phosphor as in one of claims 59 to 68.
72. The light emitting device according to claim 71;
wherein said phosphor further comprises a yttrium-aluminum oxide phosphor activated by cerium.
73. The light emitting device according to claim 71;
wherein said yttrium-aluminum oxide phosphor activated by cerium and said nitride phosphor is mixed at the ratio of 1 to 15 : 1.
74. The light emitting device as in one of claims 71 to 73;
wherein said first luminescence spectrum has a luminescence peal at 360 to 550nm, wherein a light in white range is emitted by mixing a portion of light having said first luminescence spectrum and a portion of light having said second luminescence spectrum.
75. The light emitting device as in one of claims 71 to 74;
wherein said phosphor is a powder or a particle, and is contained in a light transmitting material.
76. The light emitting device as in one of claims 71 to 75;
wherein said semiconductor light emitting element is a III Group nitride-base compound semiconductor light emitting element.
77. The light emitting device as in one of claims 71 to 76;
wherein an average color rendering index Ra is in a range of 75 to 95 and a color temperature is in a range of 2000K to 8000K.
78. A process for production of a nitride phosphor which contains at least nitrogen, and absorbs at least a portion of light having a first luminescence spectrum and emits light having a second luminescence spectrum which is different from the above-mentioned first luminescence spectrum is characterized by having a step of firing in ammonia atmosphere.
79. The process for production of said nitride phosphor according to claim 78; wherein said second luminescence spectrum. has at least one or more peaks in the yellow to red range.
80. The process for production of said nitride phosphor according to claim 78; wherein said firing is carried out using a crucible made of boron nitride material.
81. The process for production of said nitride phosphor as in one of claims 78 to 80;

wherein said nitride phosphor has a general formula LgMYN((2/3)X+(4/3)Y)-R (wherein L is at least one or more elements selected from the Group II Elements consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Hg, M is at least one or more elements selected from the Group IV Elements consisting of C, Si, Ge, Sn, Ti, Zr and Hf, and R is an activator.).
82. The process for production of said nitride phosphor as in one of claims 78 to 81;
wherein said nitride phosphor has a general formula LXMyN((2/8)X+(4/3);R wherein L is at least one or more elements selected from the Group II Elements consisting of Mg, Ca, Sr and Ba, M is Si, and R
is an activator.).
83. The process for production of said nitride phosphor as in one of claims 78 to 81; further comprising a step of mixing a nitride of L, a nitride of M and a compound of R.
84. The process for production of said nitride phosphor as in one of claims 78 to 83;
wherein said activator R is Eu.
85. The process for production of said nitride phosphor as in one of claims 81 to 84;
wherein said L and said R has a relation of the molar ratio of L = R =
86. The nitride phosphor prepared by the process as in one of claims 78 to 85.
87. A light emitting device comprising a light emitting device which has at least a semiconductor light emitting element which emits light of a first luminescence spectrum, and a nitride phosphor which contains at least nitrogen, and absorbs at least a portion of light of said first luminescence spectrum and emits light of a second luminescence spectrum which is different from said first luminescence spectrum is characterized in that said nitride phosphor contains the nitride phosphor according to claim 86.
88. A light emitting device comprising a light emitting element, a first phosphor which absorbs at least the portion of light from said light emitting element and emits light having a different wave length, and a second phosphor which absorbs at least the portion of light from said light emitting element and emits light having a different wave length, wherein the peak wave length of luminescence spectrum which said light emitting element has is situated at a longer wave length side than the peak wave length of excitation spectrum which the first phosphor has and the peak wave length of excitation spectrum which the second phosphor has.
89. The light emitting device according to claim 88;
wherein the peak wave length of luminescence spectrum of the light emitting element is shifted toward shorter wavelength side in accordance with the increase of electric current density.
90. The light emitting device according to claims 88 or 89;
wherein said first phosphor and said second phosphor have a nearly equal change of luminescence intensity in accordance with the change of ambient temperatures of the first phosphor and the second phosphor.
91. The light emitting device according to claim 90;
wherein the change of ambient temperatures of the first phosphor and the second phosphor is caused by the change of the input electric current to said light emitting element.
92. The light emitting device as in one of claims 88 to 91;
wherein the peak wave length of luminescence spectrum of said light emitting element is in a range of 360 nm to 530 nm.
93. The light emitting device as in one of claims 88 to 92;
wherein said first phosphor has a higher excitation efficiency at the short wavelength side of said wave length change than the long wavelength side within a range of the wave length change of the light emitting element which is generated at changing the electric current at density of the light emitting element.
94. The light emitting device as in one of claims 88 to 93;

wherein said first phosphor has the peak wave length of excitation spectrum which the first phosphor has at the short wavelength side of said wave length change within a range of the wave length change of the light emitting element which is generated at changing the electric current density of the light emitting element.
95. The light emitting device as in one of claims 88 to 94;
wherein said first phosphor contains a yttrium-aluminum-garnet-base phosphor which contains Y and Al, and contains at least one of elements selected from the group consisting of Lu, Sc, La, Gd, Tb, Eu and Sm and at least one of elements selected from the group consisting of Ga and In and is activated by at least one of elements selected from the rare earth elements.
96. The light emitting device as in one of claims 88 to 95;
wherein the difference between the peak wave length of excitation spectrum which said first phosphor has and the peak wave length of excitation spectrum which said light emitting element has is 40 nm or less.
97. The light emitting device as in one of claims 88 to 96;
wherein said second phosphor has a higher excitation efficiency at the short wavelength side of said wave length change than the long wavelength side within a range of the wave length change of the light emitting element which is generated at changing the electric current density of the light emitting element.
98. The light emitting device as in one of claims 88 to 97;
wherein said second phosphor contains a nitride-base phosphor which contains N, and contains at least one of elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Zn and at least one elements selected from the group consisting of C, Si, Ge, Sn, Ti, Zr and Hf, and is activated by at least one of elements selected from the rare earth elements.
99. The light emitting device as in one of claims 88 to 97;
wherein said light emitting device is the light source of a back light for a liquid crystal display or a light source for illumination.
100. A light emitting device comprising a light sources and a plural number of phosphors which absorb at least the portion of light from said light source and emit light having a different wave length, wherein said phosphors contain the first phosphor on at least one of the light sources and at least one of the second phosphors in which at least a portion of light emitted is absorbed in the first phosphor, said first phosphor being situated at the light source side than the second phosphors.
101. The light emitting device according to claim 100 wherein the second phosphors are situated on at least one of the light sources, and/or at least one of light sources different from said at least one of light sources.
102. The light emitting device according to Claims 100 to 101;

wherein said light emitting device has the first concave portion mounting said first phosphor and at least one of the light sources and the second concave portion mounting said second phosphor and at least one of the light sources.
103. The light emitting device as in one of Claims 100 to 102;
wherein said first phosphor contains a nitride-base phosphor which contains N, and contains at least one of elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Zn and at least one elements selected from the group consisting of C, Si, Ge, Sn, Ti, Zr and Hf and is activated by at least one of elements selected from the rare earth elements.
104. The light emitting device as in one of Claims 100 to 103;
wherein said second phosphor contains a yttrium-aluminum-garnet-base phosphor which contains Y and Al, and contains at least one of elements selected from the group consisting of Lu, Sc, La, Gd, Tb, Eu and Sm and at least one of elements selected from the group consisting of Ga and In and is activated by at least one of elements selected from the rare earth elements.
105. The light emitting device as in one of Claims 100 to 104;
wherein said second phosphor has a nearly equal decreasing rate of luminescence output against the raise of temperature as said first phosphor.
106. The light emitting device as in one of Claims 100 to 105;

wherein the light sources are semiconductor light emitting elements.
107. The light emitting device as in one of Claims 100 to 106 wherein said light sources are light sources which combined the semiconductor light emitting elements with the phosphors which absorb at least the portion of light from said semiconductor light emitting elements and emit light having a different wave length.
108. The light emitting device as in one of Claims 100 to 107;
wherein the light sources have the peak wave length of luminescence spectrum of 350 nm to 530 nm.
109. The light emitting device as in one of Claims 100 to 108;
wherein the light emitting device is the light source of a back light for a liquid crystal display or a light source for illumination:
110. The light emitting device as in one of Claims 100 to 109;
wherein light sources which emit light exciting the first phosphors and the luminescence outputs of light sources which emit light exciting the second phosphors can be respectively controlled independently.
CA2447288A 2002-03-22 2003-03-20 Nitride phosphor and method for preparation thereof, and light emitting device Expired - Lifetime CA2447288C (en)

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JP2002126566A JP2003321675A (en) 2002-04-26 2002-04-26 Nitride fluorophor and method for producing the same
JP2002148555A JP4221950B2 (en) 2002-05-23 2002-05-23 Phosphor
JP2002-148555 2002-05-23
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JP2002167166A JP4868685B2 (en) 2002-06-07 2002-06-07 Phosphor
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JP2002348386A JP4214768B2 (en) 2002-11-29 2002-11-29 Nitride phosphor and light emitting device using the same
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Families Citing this family (307)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100961342B1 (en) * 2002-03-22 2010-06-04 니치아 카가쿠 고교 가부시키가이샤 Nitride Phosphor and Production Process Thereof, and Light Emitting Device
CN100595938C (en) 2002-08-01 2010-03-24 日亚化学工业株式会社 Semiconductor light emitting device, manufacturing method thereof, and light emitting device using the same
KR100693969B1 (en) * 2003-03-10 2007-03-12 도요다 고세이 가부시키가이샤 Solid element device and method for manufacture thereof
US7368179B2 (en) 2003-04-21 2008-05-06 Sarnoff Corporation Methods and devices using high efficiency alkaline earth metal thiogallate-based phosphors
JP2006525682A (en) * 2003-04-30 2006-11-09 クリー　インコーポレイテッド High power solid state light emitting device package
KR100691143B1 (en) * 2003-04-30 2007-03-09 삼성전기주식회사 Light emitting diode device with multi-layered phosphor
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
US20050041433A1 (en) * 2003-08-18 2005-02-24 Visteon Global Technologies, Inc. Automotive lighting system
EP1670875B1 (en) * 2003-09-24 2019-08-14 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Highly efficient led-based illumination system featuring improved color rendering
US7965031B2 (en) * 2003-09-24 2011-06-21 Osram Gesellschaft mit beschränkter Haftung White-emitting LED having a defined color temperature
DE602004028648D1 (en) 2003-11-25 2010-09-23 Panasonic Elec Works Co Ltd LIGHT-EMITTING COMPONENT WITH A LIGHT DIODE CHIP
JP3837588B2 (en) * 2003-11-26 2006-10-25 独立行政法人物質・材料研究機構 Phosphors and light emitting devices using phosphors
JP3931239B2 (en) * 2004-02-18 2007-06-13 独立行政法人物質・材料研究機構 Light emitting device and lighting apparatus
DE602005023414D1 (en) * 2004-02-20 2010-10-21 Lumination Llc RULES FOR EFFICIENT LIGHT SOURCES WITH MEDIUM-CONV. LED
JP2005286312A (en) * 2004-03-02 2005-10-13 Fujikura Ltd Light emitting device and lighting apparatus
US7592192B2 (en) * 2004-03-05 2009-09-22 Konica Minolta Holdings, Inc. White light emitting diode (white LED) and method of manufacturing white LED
JPWO2005093860A1 (en) * 2004-03-26 2008-02-14 シャープ株式会社 Light emitting device
KR101010880B1 (en) * 2004-04-26 2011-01-25 미쓰비시 가가꾸 가부시키가이샤 Blue color composition for color filter, color filter, and color image display device
EP2113549B1 (en) 2004-04-27 2011-12-28 Panasonic Corporation Phosphor composition and light-emitting device using the same
KR100655894B1 (en) * 2004-05-06 2006-12-08 서울옵토디바이스주식회사 Light Emitting Device
KR100665299B1 (en) * 2004-06-10 2007-01-04 서울반도체 주식회사 Luminescent material
US8308980B2 (en) * 2004-06-10 2012-11-13 Seoul Semiconductor Co., Ltd. Light emitting device
KR100665298B1 (en) * 2004-06-10 2007-01-04 서울반도체 주식회사 Light emitting device
WO2006012234A2 (en) * 2004-06-25 2006-02-02 Sarnoff Corporation Nitride phosphors and devices
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
EP1769050B1 (en) 2004-07-06 2013-01-16 Lightscape Materials Inc. Efficient, green-emitting phosphors, and combinations with red-emitting phosphors
US20070045777A1 (en) * 2004-07-08 2007-03-01 Jennifer Gillies Micronized semiconductor nanocrystal complexes and methods of making and using same
JP4521227B2 (en) * 2004-07-14 2010-08-11 株式会社東芝 Method for producing phosphor containing nitrogen
EP1795574B1 (en) * 2004-08-11 2012-10-10 National Institute for Materials Science Phosphor, method for producing same and light-emitting device
US20060049414A1 (en) * 2004-08-19 2006-03-09 Chandran Ramachandran G Novel oxynitride phosphors
TW200621941A (en) * 2004-08-31 2006-07-01 Sumitomo Chemical Co Fluorescent substance
JP5081370B2 (en) * 2004-08-31 2012-11-28 日亜化学工業株式会社 Light emitting device
JP4659414B2 (en) * 2004-09-01 2011-03-30 アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド Light emitting diode and light emission control system using the same
EP2360225B1 (en) * 2004-09-22 2013-06-26 National Institute for Materials Science Phosphor, production method thereof and light emitting instrument
TWI256149B (en) * 2004-09-27 2006-06-01 Advanced Optoelectronic Tech Light apparatus having adjustable color light and manufacturing method thereof
KR100845493B1 (en) * 2004-09-29 2008-07-10 쇼와 덴코 가부시키가이샤 Oxynitride-based fluorescent material and method for production thereof
US8278816B2 (en) 2004-09-30 2012-10-02 Global Tungsten & Powders Corp. High CRI electroluminescent lamp
US7452483B2 (en) * 2004-09-30 2008-11-18 Global Tungsten & Powders Corp. Yellow-emitting phosphor blend for electroluminescent lamps
US7749405B2 (en) 2004-09-30 2010-07-06 Global Tungsten & Powders Corp. White-emitting phosphor blend and electroluminescent lamp containing same
KR20060034055A (en) * 2004-10-18 2006-04-21 엘지이노텍 주식회사 Phosphor and led using the same
US7419839B2 (en) 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US7671529B2 (en) 2004-12-10 2010-03-02 Philips Lumileds Lighting Company, Llc Phosphor converted light emitting device
US7433115B2 (en) 2004-12-15 2008-10-07 Nichia Corporation Light emitting device
US7854859B2 (en) 2004-12-28 2010-12-21 Nichia Corporation Nitride phosphor, method for producing this nitride phosphor, and light emitting device that uses this nitride phosphor
JP2006213910A (en) * 2005-01-06 2006-08-17 Matsushita Electric Ind Co Ltd Oxynitride phosphor and light-emitting device
US20060171152A1 (en) * 2005-01-20 2006-08-03 Toyoda Gosei Co., Ltd. Light emitting device and method of making the same
CN101712868A (en) * 2005-02-28 2010-05-26 电气化学工业株式会社 Fluorescent substance and process for producing the same, and luminescent element using the same
US7439668B2 (en) * 2005-03-01 2008-10-21 Lumination Llc Oxynitride phosphors for use in lighting applications having improved color quality
US7276183B2 (en) * 2005-03-25 2007-10-02 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
JP2006278980A (en) * 2005-03-30 2006-10-12 Sanyo Electric Co Ltd Semiconductor light-emitting device
CN103361046B (en) 2005-04-01 2016-02-03 三菱化学株式会社 Alloy powder for raw material of inorganic functional material and fluorophor
CN1854858A (en) * 2005-04-19 2006-11-01 夏普株式会社 Luminous device, liquid crystal dislay device and illuminating device
WO2006126567A1 (en) * 2005-05-24 2006-11-30 Mitsubishi Chemical Corporation Phosphor and use thereof
JP2007049114A (en) 2005-05-30 2007-02-22 Sharp Corp Light emitting device and method of manufacturing the same
KR101194129B1 (en) * 2005-06-15 2012-10-24 니치아 카가쿠 고교 가부시키가이샤 Light emitting device
JP4640248B2 (en) * 2005-07-25 2011-03-02 豊田合成株式会社 Light source device
US7329907B2 (en) * 2005-08-12 2008-02-12 Avago Technologies, Ecbu Ip Pte Ltd Phosphor-converted LED devices having improved light distribution uniformity
US9045830B2 (en) * 2005-08-24 2015-06-02 New Sts Limited Luminescent material compositions and structures incorporating the same
US20070052342A1 (en) * 2005-09-01 2007-03-08 Sharp Kabushiki Kaisha Light-emitting device
JP5118823B2 (en) * 2005-09-14 2013-01-16 東北リコー株式会社 Ink fixing method, ink fixing device, and printing apparatus
KR100724591B1 (en) 2005-09-30 2007-06-04 서울반도체 주식회사 Light emitting device and LCD backlight using the same
US7952108B2 (en) * 2005-10-18 2011-05-31 Finisar Corporation Reducing thermal expansion effects in semiconductor packages
TWI266441B (en) * 2005-10-26 2006-11-11 Lustrous Technology Ltd COB-typed LED package with phosphor
KR101258397B1 (en) * 2005-11-11 2013-04-30 서울반도체 주식회사 Copper-Alkaline-Earth-Silicate mixed crystal phosphors
ATE439615T1 (en) * 2005-12-01 2009-08-15 Fiat Ricerche CLEAR DISPLAY USING PHOTOLUMINescent MATERIAL
US20070125984A1 (en) * 2005-12-01 2007-06-07 Sarnoff Corporation Phosphors protected against moisture and LED lighting devices
US8906262B2 (en) * 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
KR101055772B1 (en) * 2005-12-15 2011-08-11 서울반도체 주식회사 Light emitting device
TWI396814B (en) 2005-12-22 2013-05-21 克里公司 Lighting device
EP1974389A4 (en) 2006-01-05 2010-12-29 Illumitex Inc Separate optical device for directing light from an led
JP4828248B2 (en) * 2006-02-16 2011-11-30 新光電気工業株式会社 Light emitting device and manufacturing method thereof
KR100828891B1 (en) * 2006-02-23 2008-05-09 엘지이노텍 주식회사 LED Package
WO2007099942A1 (en) * 2006-02-28 2007-09-07 Mitsubishi Chemical Corporation Phosphor raw material and method for producing alloy for phosphor raw material
US7731377B2 (en) 2006-03-21 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Backlight device and display device
JP5032043B2 (en) * 2006-03-27 2012-09-26 豊田合成株式会社 Ferrous metal alkaline earth metal silicate mixed crystal phosphor and light emitting device using the same
KR100875443B1 (en) 2006-03-31 2008-12-23 서울반도체 주식회사 Light emitting device
CN102437152A (en) * 2006-04-24 2012-05-02 克利公司 Side-view surface mount white LED
JP2007305785A (en) * 2006-05-11 2007-11-22 Nichia Chem Ind Ltd Light emitting device
JP2007308537A (en) * 2006-05-16 2007-11-29 Sony Corp Luminous composition, light source unit and display
KR101390731B1 (en) * 2006-05-19 2014-04-30 미쓰비시 가가꾸 가부시키가이샤 Nitrogen-containing alloy and method for producing phosphor by using the same
CN101077973B (en) 2006-05-26 2010-09-29 大连路明发光科技股份有限公司 Silicate luminescent material, preparation method thereof and luminescent device using the same
US20090279283A1 (en) * 2006-06-22 2009-11-12 Koninklijke Philips Electronics N.V. Low-pressure gas discharge lamp
JP5090802B2 (en) * 2006-06-28 2012-12-05 ソウル セミコンダクター カンパニー リミテッド Phosphor, manufacturing method thereof, and light emitting diode
US7837455B2 (en) * 2006-07-28 2010-11-23 Ethicon, Inc. Apparatus and method for making suture packages
US7820075B2 (en) 2006-08-10 2010-10-26 Intematix Corporation Phosphor composition with self-adjusting chromaticity
WO2008022552A1 (en) 2006-08-15 2008-02-28 Luming Science And Technology Group Co., Ltd. Silicate-base luminescent material with muti-emission peak, a method of manufacturing the same and a lighting apparatus using the same
KR101258227B1 (en) * 2006-08-29 2013-04-25 서울반도체 주식회사 Light emitting device
US20080054793A1 (en) * 2006-08-30 2008-03-06 Everlight Electronics Co., Ltd. White light-emitting apparatus
JP2008060344A (en) * 2006-08-31 2008-03-13 Toshiba Corp Semiconductor light-emitting device
CN101145593A (en) * 2006-09-14 2008-03-19 鸿富锦精密工业（深圳）有限公司 Light emitting diode and its manufacturing method
US20100224890A1 (en) * 2006-09-18 2010-09-09 Cree, Inc. Light emitting diode chip with electrical insulation element
KR101241528B1 (en) * 2006-09-25 2013-03-08 엘지이노텍 주식회사 Light Emitting device
JP2010506402A (en) 2006-10-02 2010-02-25 イルミテックス， インコーポレイテッド LED system and method
CN101605867B (en) 2006-10-03 2013-05-08 渲染材料公司 Metal silicate halide phosphors and led lighting devices using the same
JP2008135725A (en) * 2006-10-31 2008-06-12 Toshiba Corp Semiconductor light emitting device
DE102006051756A1 (en) * 2006-11-02 2008-05-08 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. light source
JP5367218B2 (en) 2006-11-24 2013-12-11 シャープ株式会社 Method for manufacturing phosphor and method for manufacturing light emitting device
KR100946015B1 (en) * 2007-01-02 2010-03-09 삼성전기주식회사 White led device and light source module for lcd backlight using the same
CN101605866B (en) * 2007-02-07 2013-01-02 皇家飞利浦电子股份有限公司 Illumination system comprising composite monolithic ceramic luminescence converter
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
DE102007009351A1 (en) * 2007-02-23 2008-08-28 Noctron Holding S.A. Lamp
DE102007010719A1 (en) * 2007-03-06 2008-09-11 Merck Patent Gmbh Phosphors consisting of doped garnets for pcLEDs
US8610143B2 (en) * 2007-03-12 2013-12-17 Nichia Corporation High output power light emitting device and package used therefor
JP4970095B2 (en) * 2007-03-19 2012-07-04 富士フイルム株式会社 LIGHTING DEVICE, ITS LIGHT EMITTING METHOD, AND PHOTOGRAPHING DEVICE
JP5089212B2 (en) * 2007-03-23 2012-12-05 シャープ株式会社 LIGHT EMITTING DEVICE, LED LAMP USING THE SAME, AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE
US20080246185A1 (en) * 2007-04-04 2008-10-09 Bily Wang Composition of led frame body and manufacturing method thereof
WO2008132954A1 (en) 2007-04-18 2008-11-06 Mitsubishi Chemical Corporation Phosphor and method for producing the same, phosphor-containing composition, light-emitting device, illuminating device, image display device, and nitrogen-containing compound
US20080290359A1 (en) * 2007-04-23 2008-11-27 Samsung Electro-Mechanics Co., Ltd. Light emitting device and manufacturing method of the same
US8232563B2 (en) * 2007-06-14 2012-07-31 Epistar Corporation Light-emitting device
KR101273083B1 (en) * 2007-06-21 2013-06-10 엘지이노텍 주식회사 Light Emitting device
CN101157854B (en) 2007-07-02 2010-10-13 北京宇极科技发展有限公司 Oxynitrides luminescent material, preparation method and uses thereof
TWI347687B (en) * 2007-07-13 2011-08-21 Lite On Technology Corp Light-emitting device with open-loop control
WO2009017117A1 (en) * 2007-07-30 2009-02-05 Sharp Kabushiki Kaisha Light emitting device, illuminating apparatus and clean room provided with illuminating apparatus
KR20090019677A (en) * 2007-08-21 2009-02-25 삼성전기주식회사 Oxy nitride phosphor, white light emitting device including oxy nitride phosphor and method for preparing phosphor
CN101784636B (en) 2007-08-22 2013-06-12 首尔半导体株式会社 Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
US20090050912A1 (en) * 2007-08-24 2009-02-26 Foxsemicon Integrated Technology, Inc. Light emitting diode and outdoor illumination device having the same
CN101378103A (en) * 2007-08-28 2009-03-04 富士迈半导体精密工业（上海）有限公司 White light light-emitting device and manufacturing method thereof
KR101055769B1 (en) * 2007-08-28 2011-08-11 서울반도체 주식회사 Light-emitting device adopting non-stoichiometric tetra-alkaline earth silicate phosphor
TWI416756B (en) * 2007-08-30 2013-11-21 Nichia Corp A luminescent device
DE102007057710B4 (en) * 2007-09-28 2024-03-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Radiation-emitting component with conversion element
US8551360B2 (en) * 2007-10-15 2013-10-08 Leuchtstoffwerk Breitungen Gmbh Rare-earth doped alkaline-earth silicon nitride phosphor, method for producing and radiation converting device comprising such a phosphor
US20120037886A1 (en) 2007-11-13 2012-02-16 Epistar Corporation Light-emitting diode device
TWI400787B (en) * 2007-11-13 2013-07-01 Epistar Corp Light-emitting device package
KR100932978B1 (en) * 2007-11-28 2009-12-21 삼성에스디아이 주식회사 White phosphor, light emitting device using the same, and liquid crystal display using the light emitting device as a backlight unit
US7810954B2 (en) * 2007-12-03 2010-10-12 Lumination Llc LED-based changeable color light lamp
US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
CN101903493B (en) * 2007-12-19 2014-03-26 皇家飞利浦电子股份有限公司 Red emitting SIALON-based material
KR100898288B1 (en) 2008-01-09 2009-05-18 삼성에스디아이 주식회사 White phosphor, light emission device with the same, and liquid crsytal display device with the light emission device as back light unit
EP2246409B1 (en) * 2008-01-21 2014-04-16 Nichia Corporation Light emitting apparatus
DE102008005936A1 (en) * 2008-01-24 2009-07-30 Osram Opto Semiconductors Gmbh Opto-electronic arrangement has opto-electronic semiconductor chip which generates or detects electromagnetic radiation in operation, where part of electromagnetic radiation enters through outer surface of body
EP2240968A1 (en) 2008-02-08 2010-10-20 Illumitex, Inc. System and method for emitter layer shaping
US20100244731A1 (en) * 2008-02-13 2010-09-30 Canon Components, Inc. White light emitting diode, white light emitting apparatus, and linear illuminator using the same
US8567973B2 (en) * 2008-03-07 2013-10-29 Intematix Corporation Multiple-chip excitation systems for white light emitting diodes (LEDs)
CN102036999A (en) * 2008-03-21 2011-04-27 内诺格雷姆公司 Metal silicon nitride or metal silicon oxynitride submicron phosphor particles and methods for synthesizing these phosphors
KR100973238B1 (en) * 2008-03-26 2010-07-30 서울반도체 주식회사 Phosphor coating method and apparatus and led comprising phosphor coating layer
JP5665160B2 (en) * 2008-03-26 2015-02-04 パナソニックＩｐマネジメント株式会社 Light emitting device and lighting apparatus
DE102009018603B9 (en) 2008-04-25 2021-01-14 Samsung Electronics Co., Ltd. Lighting device and manufacturing method thereof
US8274215B2 (en) 2008-12-15 2012-09-25 Intematix Corporation Nitride-based, red-emitting phosphors
US8242525B2 (en) * 2008-05-20 2012-08-14 Lightscape Materials, Inc. Silicate-based phosphors and LED lighting devices using the same
KR100992778B1 (en) 2008-05-23 2010-11-05 엘지이노텍 주식회사 Light emitting device package and method for manufacturing the same
US8172424B2 (en) * 2009-05-01 2012-05-08 Abl Ip Holding Llc Heat sinking and flexible circuit board, for solid state light fixture utilizing an optical cavity
US7845825B2 (en) * 2009-12-02 2010-12-07 Abl Ip Holding Llc Light fixture using near UV solid state device and remote semiconductor nanophosphors to produce white light
US8028537B2 (en) * 2009-05-01 2011-10-04 Abl Ip Holding Llc Heat sinking and flexible circuit board, for solid state light fixture utilizing an optical cavity
US8262251B2 (en) * 2009-05-01 2012-09-11 Abl Ip Holding Llc Light fixture using doped semiconductor nanophosphor in a gas
US8021008B2 (en) * 2008-05-27 2011-09-20 Abl Ip Holding Llc Solid state lighting using quantum dots in a liquid
US8212469B2 (en) 2010-02-01 2012-07-03 Abl Ip Holding Llc Lamp using solid state source and doped semiconductor nanophosphor
JP5524051B2 (en) * 2008-05-30 2014-06-18 株式会社東芝 White light source, backlight, liquid crystal display device and lighting device
KR101180134B1 (en) * 2008-05-30 2012-09-05 도시바 마테리알 가부시키가이샤 White light led, and backlight and liquid crystal display device using the same
TW201000806A (en) * 2008-06-19 2010-01-01 Lighthouse Technology Co Ltd Light-emitting component and its forming mold
TWI389344B (en) * 2008-08-25 2013-03-11 Epistar Corp Opto-electrical device
JP5288967B2 (en) * 2008-09-22 2013-09-11 ユー・ディー・シー アイルランド リミテッド LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, AND DISPLAY HAVING THE LIGHT EMITTING ELEMENT
JP4868427B2 (en) * 2008-11-13 2012-02-01 国立大学法人名古屋大学 Semiconductor light emitting device
US9464225B2 (en) * 2008-11-17 2016-10-11 Cree, Inc. Luminescent particles, methods of identifying same and light emitting devices including the same
US8287759B2 (en) * 2009-05-15 2012-10-16 Cree, Inc. Luminescent particles, methods and light emitting devices including the same
US9428688B2 (en) 2008-11-17 2016-08-30 Cree, Inc. Phosphor composition
TWI391471B (en) * 2008-11-21 2013-04-01 Univ Nat Cheng Kung Preparation method of nitride fluorescent powder
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
EP2202284B1 (en) * 2008-12-23 2012-10-17 Korea Institute of Energy Research Nitride red phosphors and white light emitting diode using rare-earth-doped nitride red phosphors
CN101781558B (en) * 2009-01-14 2013-03-20 北京有色金属研究总院 Silicon-based nitride red fluorophor and preparation method thereof
US8044420B2 (en) * 2009-01-15 2011-10-25 Advanced Semiconductor Engineering, Inc. Light emitting diode package structure
US7883910B2 (en) * 2009-02-03 2011-02-08 Industrial Technology Research Institute Light emitting diode structure, LED packaging structure using the same and method of forming the same
CN102308398B (en) 2009-02-05 2015-03-25 Ccs株式会社 LED light-emitting device
KR100969146B1 (en) * 2009-02-18 2010-07-08 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
DE102009010705A1 (en) 2009-02-27 2010-09-02 Merck Patent Gmbh Co-doped 2-5-8 nitrides
US8610156B2 (en) 2009-03-10 2013-12-17 Lg Innotek Co., Ltd. Light emitting device package
KR101047603B1 (en) * 2009-03-10 2011-07-07 엘지이노텍 주식회사 Light emitting device package and its manufacturing method
KR20100106053A (en) * 2009-03-23 2010-10-01 삼성전자주식회사 Light emitting device, light emitting system comprising the same, and method of fabricating thereof
US8168998B2 (en) * 2009-06-09 2012-05-01 Koninklijke Philips Electronics N.V. LED with remote phosphor layer and reflective submount
DE102009030205A1 (en) * 2009-06-24 2010-12-30 Litec-Lp Gmbh Luminescent substance with europium-doped silicate luminophore, useful in LED, comprises alkaline-, rare-earth metal orthosilicate, and solid solution in form of mixed phases arranged between alkaline- and rare-earth metal oxyorthosilicate
WO2011002087A1 (en) 2009-07-02 2011-01-06 シャープ株式会社 Light-emitting device
DE102009037732A1 (en) * 2009-08-17 2011-02-24 Osram Gesellschaft mit beschränkter Haftung Conversion LED with high efficiency
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US20110090669A1 (en) * 2009-10-20 2011-04-21 Tsung-Ting Sun Led lighting device and light source module for the same
TWI374704B (en) 2009-11-09 2012-10-21 Ind Tech Res Inst Light transformation particle and photobioreactor
US7998526B2 (en) * 2009-12-01 2011-08-16 Bridgelux, Inc. Method and system for dynamic in-situ phosphor mixing and jetting
US8118454B2 (en) 2009-12-02 2012-02-21 Abl Ip Holding Llc Solid state lighting system with optic providing occluded remote phosphor
US9163802B2 (en) 2009-12-02 2015-10-20 Abl Ip Holding Llc Lighting fixtures using solid state device and remote phosphors to produce white light
US20110127555A1 (en) * 2009-12-02 2011-06-02 Renaissance Lighting, Inc. Solid state light emitter with phosphors dispersed in a liquid or gas for producing high cri white light
US8217406B2 (en) * 2009-12-02 2012-07-10 Abl Ip Holding Llc Solid state light emitter with pumped nanophosphors for producing high CRI white light
JP5707697B2 (en) * 2009-12-17 2015-04-30 日亜化学工業株式会社 Light emitting device
DE102009055185A1 (en) 2009-12-22 2011-06-30 Osram Gesellschaft mit beschränkter Haftung, 81543 Phosphor and light source with such phosphor
US9719012B2 (en) * 2010-02-01 2017-08-01 Abl Ip Holding Llc Tubular lighting products using solid state source and semiconductor nanophosphor, E.G. for florescent tube replacement
US8517550B2 (en) 2010-02-15 2013-08-27 Abl Ip Holding Llc Phosphor-centric control of color of light
EP2541630B1 (en) 2010-02-26 2017-05-31 Sharp Kabushiki Kaisha Light-emitting device
CN102844896A (en) * 2010-03-06 2012-12-26 柏布里特有限公司 Led heat and photon extractor
CN101798510A (en) * 2010-03-15 2010-08-11 彩虹集团公司 Nitride phosphor material and preparation method thereof
KR101774434B1 (en) * 2010-03-31 2017-09-04 오스람 실바니아 인코포레이티드 Phosphor and leds containing same
CN101831295A (en) * 2010-04-07 2010-09-15 江苏博睿光电有限公司 Silica-based nitride red fluorescent powder and preparation method thereof
KR101444085B1 (en) * 2010-05-14 2014-09-26 라이트스케이프 머티어리얼스, 인코포레이티드 Carbidonitride based phosphors and light emitting devices using the same
KR101412604B1 (en) * 2010-05-14 2014-06-26 라이트스케이프 머티어리얼스, 인코포레이티드 Oxycarbonitride phosphors and light emitting devices using the same
DE102010021341A1 (en) * 2010-05-22 2011-11-24 Merck Patent Gmbh phosphors
KR100984273B1 (en) * 2010-05-25 2010-10-01 충남대학교산학협력단 Nitride phosphor, reaction mixture and method production and light emitting device comprising such a phosphor
JP5649724B2 (en) * 2010-05-27 2015-01-07 オーシャンズ キング ライティング サイエンスアンドテクノロジー カンパニー リミテッド Rare earth doped halogen oxide light emitting material containing metal particles and method for preparing the same
WO2012006289A1 (en) 2010-07-09 2012-01-12 Nitto Denko Corporation Phosphor composition and light emitting device using the same
US20120019126A1 (en) * 2010-07-22 2012-01-26 General Electric Company Oxynitride phosphors, method of preparation, and light emitting instrument
WO2012014701A1 (en) 2010-07-26 2012-02-02 シャープ株式会社 Light-emitting device
US8835199B2 (en) * 2010-07-28 2014-09-16 GE Lighting Solutions, LLC Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration
US8198803B2 (en) 2010-07-30 2012-06-12 Everlight Electronics Co., Ltd. Color-temperature-tunable device
CN102376860A (en) 2010-08-05 2012-03-14 夏普株式会社 Light emitting apparatus and method for manufacturing thereof
CN102375314B (en) * 2010-08-09 2013-12-04 台达电子工业股份有限公司 Illumination system and projector using the same
US8535566B2 (en) 2010-09-10 2013-09-17 Lightscape Materials, Inc. Silicon carbidonitride based phosphors and lighting devices using the same
TW201213506A (en) * 2010-09-30 2012-04-01 Chi Mei Corp Phosphor and luminous device
TWI393764B (en) * 2010-10-15 2013-04-21 Chi Mei Corp A phosphor and a light emitting device
EP2629341B8 (en) 2010-10-15 2020-04-08 Mitsubishi Chemical Corporation White light emitting device and lighting device
CN102082225A (en) * 2010-10-21 2011-06-01 罗维鸿 Warm white LED and fluorescent powder thereof
JP2012114116A (en) * 2010-11-19 2012-06-14 Olympus Corp Light emitting device
WO2012081247A1 (en) * 2010-12-17 2012-06-21 パナソニック株式会社 Led device and method for manufacturing same
US20120161170A1 (en) * 2010-12-27 2012-06-28 GE Lighting Solutions, LLC Generation of radiation conducive to plant growth using a combination of leds and phosphors
JP5695968B2 (en) * 2010-12-28 2015-04-08 デクセリアルズ株式会社 Red phosphor, method for producing red phosphor, white light source, illumination device, and liquid crystal display device
JP2012153873A (en) * 2011-01-04 2012-08-16 Sony Chemical & Information Device Corp Red phosphor, method for producing red phosphor, white light source, illuminating device, and liquid crystal display device
US20140022761A1 (en) * 2011-01-21 2014-01-23 Osram Sylvania Inc. Luminescent Converter and LED Light Source Containing Same
KR101411255B1 (en) 2011-01-28 2014-06-23 삼성디스플레이 주식회사 Light source module and method of manufacturing the same
US8461752B2 (en) * 2011-03-18 2013-06-11 Abl Ip Holding Llc White light lamp using semiconductor light emitter(s) and remotely deployed phosphor(s)
US8803412B2 (en) * 2011-03-18 2014-08-12 Abl Ip Holding Llc Semiconductor lamp
KR101215300B1 (en) * 2011-03-29 2012-12-26 순천대학교 산학협력단 Oxynitride phospor
US8986842B2 (en) 2011-05-24 2015-03-24 Ecole Polytechnique Federale De Lausanne (Epfl) Color conversion films comprising polymer-substituted organic fluorescent dyes
JP2012246462A (en) 2011-05-31 2012-12-13 Sharp Corp Light-emitting device
JP5373859B2 (en) * 2011-07-05 2013-12-18 デクセリアルズ株式会社 Lighting device
DE102011113498A1 (en) * 2011-09-15 2013-03-21 Osram Opto Semiconductors Gmbh Phosphor mixture, optoelectronic component with a phosphor mixture and street lamp with a phosphor mixture
KR101270080B1 (en) 2011-09-22 2013-05-31 홍혜원 High luminescent silicon based nitride phosphors, their fabrication method and light emitting devide comprising such a phosphor
CN202371641U (en) * 2011-10-14 2012-08-08 郑榕彬 Light-emitting diode (LED) lamp with double-layer fluorescent powder
CN102399552B (en) * 2011-11-08 2014-07-30 杭州广陵科技开发有限公司 Nitride red fluorescent powder for white light emitting diodes (LED) and preparation method thereof
KR101863548B1 (en) 2011-11-23 2018-06-05 삼성전자주식회사 Oxinitride phosphor and light emitting device comprising the same
KR101877423B1 (en) * 2011-11-28 2018-07-11 엘지이노텍 주식회사 Oxynitride phosphor, and light-emitting device package comprising the same
KR101883337B1 (en) * 2011-12-05 2018-07-30 엘지이노텍 주식회사 Oxynitride phosphor, and light-emitting device package comprising the same
US9017574B2 (en) 2011-12-19 2015-04-28 Lightscape Materials, Inc. Carbidonitride phosphors and LED lighting devices using the same
CN103184047B (en) * 2011-12-28 2016-03-16 北京华美亮材料科技有限公司 One group of composite fluorescent material and preparation method thereof
US8663502B2 (en) 2011-12-30 2014-03-04 Intematix Corporation Red-emitting nitride-based phosphors
JP2015506396A (en) 2011-12-30 2015-03-02 インテマティックス・コーポレーションＩｎｔｅｍａｔｉｘ Ｃｏｒｐｏｒａｔｉｏｎ Nitride phosphors with interstitial cations for charge equilibrium
WO2013130606A2 (en) 2012-02-29 2013-09-06 Sabic Innovative Plastics Ip B.V. Polycarbonate made from low sulfur bisphenol a and containing converions material chemistry, and articles made therefrom
CN105206732B (en) * 2012-02-29 2018-11-09 沙特基础全球技术有限公司 Flastic molding device and luminescent device
US9653656B2 (en) 2012-03-16 2017-05-16 Advanced Semiconductor Engineering, Inc. LED packages and related methods
TWI527880B (en) * 2012-04-02 2016-04-01 呂宗昕 Phosphor and light emitting apparatus
US9938460B2 (en) 2012-04-02 2018-04-10 National Taiwan University Phosphor, light emitting apparatus and method of forming phosphor
US8637887B2 (en) 2012-05-08 2014-01-28 Advanced Semiconductor Engineering, Inc. Thermally enhanced semiconductor packages and related methods
KR101362185B1 (en) 2012-06-22 2014-02-12 순천대학교 산학협력단 Phospor and light emitting device comprising the phospor
CN102766458B (en) * 2012-06-30 2013-10-16 江苏博睿光电有限公司 High-brightness nitride red fluorescent powder and manufacturing method thereof
CN102760820B (en) * 2012-07-10 2015-05-20 江苏博睿光电有限公司 White-light LED (Light Emitting Diode) light source
US8597545B1 (en) 2012-07-18 2013-12-03 Intematix Corporation Red-emitting nitride-based calcium-stabilized phosphors
KR101941450B1 (en) * 2012-08-02 2019-01-23 엘지디스플레이 주식회사 Light emitting diode package
US8815121B2 (en) 2012-08-31 2014-08-26 Lightscape Materials, Inc. Halogenated oxycarbidonitride phosphor and devices using same
JP6068914B2 (en) * 2012-10-09 2017-01-25 デンカ株式会社 Method for manufacturing phosphor
KR101249444B1 (en) * 2012-10-25 2013-04-03 주식회사 포스포 Thorium-doped garnet-based phosphor and light emitting devices using the same
US9059379B2 (en) 2012-10-29 2015-06-16 Advanced Semiconductor Engineering, Inc. Light-emitting semiconductor packages and related methods
CN102899038A (en) * 2012-10-30 2013-01-30 江苏博睿光电有限公司 Nitride red fluorescent powder and preparation method thereof
TWI470239B (en) * 2012-11-19 2015-01-21 Wistron Corp Insulating state detection system, insulating state detection method, and fluorescence microscopy system thereof
TWI516572B (en) 2012-12-13 2016-01-11 財團法人工業技術研究院 Phosphors, and light emitting device employing the same
JP2014120731A (en) * 2012-12-19 2014-06-30 Mitsubishi Electric Corp Semiconductor device
TWI494413B (en) * 2012-12-22 2015-08-01 Chi Mei Corp Phosphor and light emitting device
CN103943759B (en) 2013-01-21 2018-04-27 圣戈本陶瓷及塑料股份有限公司 Include the object and its formation process for the material containing gadolinium that shines
US9618191B2 (en) 2013-03-07 2017-04-11 Advanced Semiconductor Engineering, Inc. Light emitting package and LED bulb
TWI464238B (en) 2013-03-27 2014-12-11 Chi Mei Corp Phosphor and light emitting device
CN105567234B (en) * 2013-04-19 2017-12-22 四川新力光源股份有限公司 Nitrogen oxides luminescent material and its preparation method and application, the fluorescent material comprising the nitrogen oxides and the LED light source being made from it
JP6040500B2 (en) 2013-04-25 2016-12-07 国立研究開発法人物質・材料研究機構 Phosphor, method for manufacturing the same, light emitting device, and image display device
WO2014186548A1 (en) 2013-05-16 2014-11-20 Sabic Innovative Plastics Ip B.V. Branched polycarbonate compositions having conversion material chemistry and articles thereof
CN104241262B (en) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 Light emitting device and display device
KR20150026364A (en) * 2013-09-02 2015-03-11 엘지전자 주식회사 Boron Nitride based phophor, method for manufacturing the same and light emitting device package
JP6156213B2 (en) 2013-09-17 2017-07-05 豊田合成株式会社 Light emitting device and manufacturing method thereof
KR20170095409A (en) 2013-10-08 2017-08-22 오스람 옵토 세미컨덕터스 게엠베하 Luminescent material, method for producing a luminescent material and use of a luminescent material
US20150138789A1 (en) * 2013-11-21 2015-05-21 Ford Global Technologies, Llc Vehicle lighting system with photoluminescent structure
TWI518170B (en) * 2013-12-26 2016-01-21 奇美實業股份有限公司 Phosphor powders and light emitting device
KR102191211B1 (en) 2014-02-28 2020-12-15 서울반도체 주식회사 Light emitting diode package
CZ307024B6 (en) * 2014-05-05 2017-11-22 Crytur, Spol.S R.O. A light source
KR20160021491A (en) 2014-08-18 2016-02-26 서울반도체 주식회사 Light emitting diode package
KR102441273B1 (en) 2014-08-27 2022-09-08 서울반도체 주식회사 Light emitting diode package and manufacturing method thereof
EP2988340B1 (en) 2014-08-18 2017-10-11 Seoul Semiconductor Co., Ltd. Light emitting diode package and manufacturing method thereof
US9315725B2 (en) 2014-08-28 2016-04-19 Lightscape Materials, Inc. Method of making EU2+ activated inorganic red phosphor
US9200199B1 (en) 2014-08-28 2015-12-01 Lightscape Materials, Inc. Inorganic red phosphor and lighting devices comprising same
US9200198B1 (en) 2014-08-28 2015-12-01 Lightscape Materials, Inc. Inorganic phosphor and light emitting devices comprising same
KR102273653B1 (en) 2014-08-29 2021-07-06 서울반도체 주식회사 Light emitting diode package
KR102275147B1 (en) * 2014-09-12 2021-07-09 대주전자재료 주식회사 Oxynitride-based fluorescent material and light emitting apparatus using same
JP6524624B2 (en) * 2014-09-19 2019-06-05 日亜化学工業株式会社 Light emitting device
KR102256594B1 (en) 2014-10-07 2021-05-26 서울반도체 주식회사 Light emitting diode package
KR102357584B1 (en) 2014-12-17 2022-02-04 삼성전자주식회사 Nitride phosphor, light emitting device, display apparatus and illumination apparatus
JP6472728B2 (en) 2015-08-04 2019-02-20 日亜化学工業株式会社 LIGHT EMITTING DEVICE AND BACKLIGHT WITH LIGHT EMITTING DEVICE
KR102477353B1 (en) * 2015-08-06 2022-12-16 삼성전자주식회사 Red phosphor, light emitting device and lighting apparatus
JP6296024B2 (en) * 2015-08-28 2018-03-20 日亜化学工業株式会社 Semiconductor laser device
JP2017088800A (en) * 2015-11-16 2017-05-25 サムスン エレクトロニクス カンパニー リミテッド Fluophor and manufacturing method therefor
US9882107B2 (en) * 2016-01-12 2018-01-30 Citizen Electronics Co., Ltd. LED package with covered bonding wire
CN106318394B (en) * 2016-08-12 2018-11-30 河北利福光电技术有限公司 A kind of nitride red light fluorescent powder of the uniform particle sizes of high brightness and its preparation method and application
CN106281322B (en) * 2016-08-12 2018-11-30 河北利福光电技术有限公司 A kind of efficient stable LED nitride red fluorescent powder and preparation method thereof
JP6669147B2 (en) * 2016-10-31 2020-03-18 日亜化学工業株式会社 Light emitting device
CN106520120B (en) * 2016-11-08 2019-04-23 河北利福光电技术有限公司 A kind of LED nitride red fluorescent powder and preparation method thereof
US10290779B2 (en) * 2016-12-15 2019-05-14 Panasonic Intellectual Property Management Co., Ltd. Light emitting element
DE102017102619B4 (en) * 2017-02-09 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED unit and LED module
CN109423285B (en) * 2017-08-31 2023-09-26 日亚化学工业株式会社 Aluminate phosphor and light-emitting device
JP6720944B2 (en) * 2017-08-31 2020-07-08 日亜化学工業株式会社 Nitride phosphor manufacturing method, nitride phosphor and light emitting device
JP7120745B2 (en) * 2017-09-29 2022-08-17 日本特殊陶業株式会社 Optical wavelength conversion device and optical composite device
CN111201304A (en) 2017-10-10 2020-05-26 电化株式会社 Red phosphor and light-emitting device
CN107739211B (en) * 2017-11-02 2020-08-04 赣州中蓝稀土新材料科技有限公司 Yellow-green mechanoluminescence ceramic material and preparation method thereof
US10763414B2 (en) * 2017-12-18 2020-09-01 Rohm Co., Ltd. Semiconductor light-emitting device
US10236422B1 (en) * 2018-05-17 2019-03-19 Eie Materials, Inc. Phosphors with narrow green emission
WO2020054351A1 (en) 2018-09-12 2020-03-19 デンカ株式会社 Fluorescent body and light-emitting device
US11056615B2 (en) 2018-09-28 2021-07-06 Nichia Corporation Method for manufacturing light emitting module with concave surface light guide plate
US10788709B2 (en) * 2018-10-30 2020-09-29 Innolux Corporation Lighting device
TWI752295B (en) * 2019-01-25 2022-01-11 晶元光電股份有限公司 Optoelectronic semiconductor device
CN113646404B (en) * 2019-04-03 2024-03-22 国立研究开发法人物质·材料研究机构 Phosphor, method for producing same, and light-emitting element
WO2020240986A1 (en) * 2019-05-27 2020-12-03 株式会社村田製作所 Dielectric ceramic composition and ceramic capacitor
US11313671B2 (en) 2019-05-28 2022-04-26 Mitutoyo Corporation Chromatic confocal range sensing system with enhanced spectrum light source configuration
JP2021059641A (en) 2019-10-03 2021-04-15 パナソニックＩｐマネジメント株式会社 Red phosphor and light emitting device using the same
JP2023525578A (en) * 2020-05-15 2023-06-16 ルミレッズ リミテッド ライアビリティ カンパニー Polychromatic light source and manufacturing method
CN111933783A (en) * 2020-08-03 2020-11-13 长乐巧通工业设计有限公司 High-precision packaging process for LED equipment
CN112573492A (en) * 2020-11-24 2021-03-30 兰州冉华实德新材料有限公司 Strontium-europium nitride solid solution powder and preparation method thereof
KR20210031874A (en) 2021-03-03 2021-03-23 서울반도체 주식회사 Light emitting diode package
KR102599818B1 (en) 2022-01-20 2023-11-08 미쯔비시 케미컬 주식회사 Phosphor, light-emitting device, illumination device, image display device, and indicator lamp for vehicle
KR102599819B1 (en) 2022-01-20 2023-11-08 미쯔비시 케미컬 주식회사 Phosphor, light-emitting device, illumination device, image display device, and indicator lamp for vehicle

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2997446A (en) * 1959-02-16 1961-08-22 Adams Irving Method of producing electroluminescent aluminum nitride
US3036014A (en) * 1961-09-20 1962-05-22 Adams Irving Red emitting electroluminescent aluminum nitride
JPH07133485A (en) 1993-11-10 1995-05-23 Toshiba Corp Production of rare earth phosphate fluorescent substance
JP2790242B2 (en) 1994-10-07 1998-08-27 日亜化学工業株式会社 Nitride semiconductor light emitting diode
JP3470734B2 (en) * 1995-02-17 2003-11-25 岩崎電気株式会社 Stacked light emitting diode
JP2947156B2 (en) * 1996-02-29 1999-09-13 双葉電子工業株式会社 Phosphor manufacturing method
JPH09260722A (en) 1996-03-19 1997-10-03 Daido Steel Co Ltd Directional variable light emitting device
DE19638667C2 (en) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mixed-color light-emitting semiconductor component with luminescence conversion element
JPH10112557A (en) 1996-10-08 1998-04-28 Nichia Chem Ind Ltd Light emitter and display device using it
JP3565472B2 (en) * 1997-09-01 2004-09-15 信越化学工業株式会社 Method for producing monodispersed spherical particles of yttria / gadolinia / europia coprecipitated and monodispersed spherical particles of yttria / gadolinia / europia obtained therefrom
JPH11163419A (en) 1997-11-26 1999-06-18 Rohm Co Ltd Light-emitting device
JP3645422B2 (en) * 1998-07-14 2005-05-11 東芝電子エンジニアリング株式会社 Light emitting device
JP3486345B2 (en) 1998-07-14 2004-01-13 東芝電子エンジニアリング株式会社 Semiconductor light emitting device
US5914501A (en) 1998-08-27 1999-06-22 Hewlett-Packard Company Light emitting diode assembly having integrated electrostatic discharge protection
US6284156B1 (en) 1998-11-19 2001-09-04 Kabushiki Kaisha Ohara Long-lasting phosphor, powdered long-lasting phosphor and method for manufacturing the powdered long-lasting phosphor
JP2000212556A (en) 1998-11-19 2000-08-02 Ohara Inc Luminous phosphor, and luminous fluorescent powder, and their production
TW498102B (en) * 1998-12-28 2002-08-11 Futaba Denshi Kogyo Kk A process for preparing GaN fluorescent substance
JP3424165B2 (en) 1999-01-08 2003-07-07 双葉電子工業株式会社 Phosphor manufacturing apparatus and phosphor manufacturing container
US6351069B1 (en) * 1999-02-18 2002-02-26 Lumileds Lighting, U.S., Llc Red-deficiency-compensating phosphor LED
CN100334746C (en) * 1999-07-23 2007-08-29 奥斯兰姆奥普托半导体股份有限两合公司 Luminescent array, wavelength-converting sealing material and light source
JP3968920B2 (en) 1999-08-10 2007-08-29 双葉電子工業株式会社 Phosphor
JP2001127346A (en) 1999-10-22 2001-05-11 Stanley Electric Co Ltd Light emitting diode
JP4197814B2 (en) * 1999-11-12 2008-12-17 シャープ株式会社 LED driving method, LED device and display device
EP1104799A1 (en) * 1999-11-30 2001-06-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Red emitting luminescent material
JP2001172625A (en) 1999-12-20 2001-06-26 Toshiba Corp Vacuum ultraviolet excitable fluorescent substance and light emitting device using the same
JP3763719B2 (en) 2000-02-02 2006-04-05 独立行政法人科学技術振興機構 Phosphors based on oxynitride glass
JP3809760B2 (en) 2000-02-18 2006-08-16 日亜化学工業株式会社 Light emitting diode
JP2002050800A (en) 2000-05-24 2002-02-15 Nichia Chem Ind Ltd Light-emitting device and forming method therefor
US6504179B1 (en) 2000-05-29 2003-01-07 Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh Led-based white-emitting illumination unit
KR100382481B1 (en) 2000-06-09 2003-05-01 엘지전자 주식회사 White Light Emitting Diode and Fabricating Method for the same
JP4817534B2 (en) * 2000-06-09 2011-11-16 星和電機株式会社 Light emitting diode lamp
JP2002080843A (en) 2000-06-30 2002-03-22 Nichia Chem Ind Ltd Light-emitting fluorescent substance by vacuum ultraviolet radiation excitation
JP2002031531A (en) 2000-07-17 2002-01-31 Tamagawa Seiki Co Ltd Rate sensor
JP2002042525A (en) 2000-07-26 2002-02-08 Toyoda Gosei Co Ltd Planar light source
JP3589187B2 (en) 2000-07-31 2004-11-17 日亜化学工業株式会社 Method for forming light emitting device
JP2002076434A (en) 2000-08-28 2002-03-15 Toyoda Gosei Co Ltd Light emitting device
JP4619509B2 (en) 2000-09-28 2011-01-26 株式会社東芝 Light emitting device
JP2002176201A (en) 2000-12-05 2002-06-21 Okaya Electric Ind Co Ltd Semiconductor light emitting element
US6632379B2 (en) * 2001-06-07 2003-10-14 National Institute For Materials Science Oxynitride phosphor activated by a rare earth element, and sialon type phosphor
JP3668770B2 (en) 2001-06-07 2005-07-06 独立行政法人物質・材料研究機構 Oxynitride phosphor activated with rare earth elements
DE10133352A1 (en) 2001-07-16 2003-02-06 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lighting unit with at least one LED as a light source
US6737681B2 (en) * 2001-08-22 2004-05-18 Nichia Corporation Light emitting device with fluorescent member excited by semiconductor light emitting element
DE10147040A1 (en) 2001-09-25 2003-04-24 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lighting unit with at least one LED as a light source
JP4207781B2 (en) * 2002-01-28 2009-01-14 日亜化学工業株式会社 Nitride semiconductor device having supporting substrate and method for manufacturing the same
US6924514B2 (en) * 2002-02-19 2005-08-02 Nichia Corporation Light-emitting device and process for producing thereof
KR100961342B1 (en) * 2002-03-22 2010-06-04 니치아 카가쿠 고교 가부시키가이샤 Nitride Phosphor and Production Process Thereof, and Light Emitting Device
JP4221950B2 (en) * 2002-05-23 2009-02-12 日亜化学工業株式会社 Phosphor
JP2003321675A (en) 2002-04-26 2003-11-14 Nichia Chem Ind Ltd Nitride fluorophor and method for producing the same
JP4263453B2 (en) * 2002-09-25 2009-05-13 パナソニック株式会社 Inorganic oxide and light emitting device using the same
TW200523340A (en) * 2003-09-24 2005-07-16 Patent Treuhand Ges Fur Elek Sche Gluhlampen Mbh Hochefeizienter leuchtstoff
US7229573B2 (en) * 2004-04-20 2007-06-12 Gelcore, Llc Ce3+ and Eu2+ doped phosphors for light generation
WO2006012234A2 (en) * 2004-06-25 2006-02-02 Sarnoff Corporation Nitride phosphors and devices
US7476338B2 (en) * 2004-08-27 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
JP4009868B2 (en) 2004-10-27 2007-11-21 日亜化学工業株式会社 Nitride phosphor and light emitting device using the same
JP2005042125A (en) 2004-10-28 2005-02-17 Nichia Chem Ind Ltd Light emitter
JP4931372B2 (en) 2005-06-06 2012-05-16 日亜化学工業株式会社 Light emitting device

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CN100430456C (en) 2008-11-05
TW200411031A (en) 2004-07-01
US7597823B2 (en) 2009-10-06
KR100961322B1 (en) 2010-06-04
EP1433831A1 (en) 2004-06-30
SG185827A1 (en) 2012-12-28
CA2447288C (en) 2011-10-04
KR100983193B1 (en) 2010-09-20
US7258816B2 (en) 2007-08-21
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US20090072708A1 (en) 2009-03-19
US20090309485A1 (en) 2009-12-17

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