CA2444273A1 - Gallium nitride semiconductor device - Google Patents

Gallium nitride semiconductor device Download PDF

Info

Publication number
CA2444273A1
CA2444273A1 CA002444273A CA2444273A CA2444273A1 CA 2444273 A1 CA2444273 A1 CA 2444273A1 CA 002444273 A CA002444273 A CA 002444273A CA 2444273 A CA2444273 A CA 2444273A CA 2444273 A1 CA2444273 A1 CA 2444273A1
Authority
CA
Canada
Prior art keywords
nitride semiconductor
gallium nitride
layer
type impurity
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002444273A
Other languages
French (fr)
Other versions
CA2444273C (en
Inventor
Kimihiro Kawagoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2444273A1 publication Critical patent/CA2444273A1/en
Application granted granted Critical
Publication of CA2444273C publication Critical patent/CA2444273C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Abstract

The present invention provides in a gallium nitride semiconductor device comprising an active layer made of an n-type gallium nitride semiconductor that includes In and is doped with n-type impurity and a p-type cladding layer made of a p-type gallium nitride semiconductor that includes A1 and is doped with p-type impurity, a first cap layer, made of a gallium nitride semiconductor that includes n-type impurity of lower concentration than that of said active layer and p-type impurity of lower concentration than that of said p-type cladding layer, and a second cap layer made of a p-type gallium nitride semiconductor that includes Al and is doped with p-type impurity are stacked one on another between said active layer and said p-type cladding layer.

Claims (3)

1. A gallium nitride semiconductor device comprising an active layer made of an n-type gallium nitride semiconductor that includes In and is doped with n-type impurity and a p-type cladding layer made of a p-type gallium nitride semiconductor that includes Al and is doped with p-type impurity, wherein a first cap layer, made of a gallium nitride semiconductor that includes n-type impurity of lower concentration than that of said active layer and p-type impurity of lower concentration than that of said p-type cladding layer, and a second cap layer made of a p-type gallium nitride semiconductor that includes Al and is doped with p-type impurity are stacked one on another between said active layer and said p-type cladding layer.
2. The gallium nitride semiconductor device according to claim 1, wherein said first cap layer is formed in contact with said active layer and said second cap layer is formed in contact with said first cap layer.
3. The gallium nitride semiconductor device according to claim 1 or 2, wherein concentration of the n-type impurity and the p-type impurity in said first cap layer is 1.0 X 10 17 any one of claims 1 to 6, wherein said first cap layer comprises GaN layer and has a thickness in a range from 15 to 100 .ANG..
8. The gallium nitride semiconductor device according to any one of claims 1 to 6, wherein said first cap layer comprises In x Ga1-x N layer (0 < x < 1) and has a thickness in a range from 25 to 150 .ANG..
9. The gallium nitride semiconductor device according to any of claims 1 to 6, wherein said first cap layer comprises Al y Ga1-y N layer ( 0 < y < 1 ) and has a thickness in a range from 15 to 50 .ANG..
10. The gallium nitride semiconductor device according to any one of claims 1 to 9, wherein the thickness of said second cap layer is in a range from 15 to 500 .ANG..
11. The gallium nitride semiconductor device according to any one of claims 1 to 10, wherein said active layer is formed by stacking well layers made of a gallium nitride semiconductor that includes In and barrier layers made of a gallium nitride semiconductor doped with n-type impurity alternately one on another, while said first cap layer includes n-type impurity in a concentration lower than that in said barrier layer.
12. The gallium nitride semiconductor device according to any one of claims 1 to 11, wherein the concentration of n-type impurity in a layer made of a gallium nitride semiconductor doped with the n-type impurity, that is nearest to the first cap layer in said active layer, is in a range from 5. 0 X 10 17 to 1.0 X 10 19 cm -3.
CA2444273A 2001-04-12 2002-04-08 Gallium nitride semiconductor device Expired - Lifetime CA2444273C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001114025 2001-04-12
JP2001-114025 2001-04-12
PCT/JP2002/003475 WO2002084831A1 (en) 2001-04-12 2002-04-08 Gallium nitride compound semiconductor element

Publications (2)

Publication Number Publication Date
CA2444273A1 true CA2444273A1 (en) 2002-10-24
CA2444273C CA2444273C (en) 2012-05-22

Family

ID=18965167

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2444273A Expired - Lifetime CA2444273C (en) 2001-04-12 2002-04-08 Gallium nitride semiconductor device

Country Status (9)

Country Link
US (1) US7230263B2 (en)
EP (1) EP1387453B1 (en)
JP (1) JP4032803B2 (en)
KR (1) KR100902109B1 (en)
CN (1) CN1252883C (en)
AT (1) ATE448589T1 (en)
CA (1) CA2444273C (en)
DE (1) DE60234330D1 (en)
WO (1) WO2002084831A1 (en)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7692182B2 (en) 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
TWI303909B (en) * 2002-11-25 2008-12-01 Nichia Corp Ridge waveguide semiconductor laser diode
JP4337520B2 (en) * 2002-11-25 2009-09-30 日亜化学工業株式会社 Ridge waveguide semiconductor laser
JP4500516B2 (en) * 2002-12-13 2010-07-14 三菱電機株式会社 Semiconductor laser device and manufacturing method thereof
JP2004311658A (en) * 2003-04-04 2004-11-04 Sharp Corp Nitride semiconductor laser element, its manufacturing method and optical device using the same
JP2005203520A (en) 2004-01-14 2005-07-28 Sumitomo Electric Ind Ltd Semiconductor light emitting element
JP5028640B2 (en) * 2004-03-26 2012-09-19 日亜化学工業株式会社 Nitride semiconductor laser device
JP2006013463A (en) * 2004-05-21 2006-01-12 Showa Denko Kk Group iii nitride semiconductor light emitting element
JP2007158132A (en) * 2005-12-06 2007-06-21 Toyoda Gosei Co Ltd Group iii nitride-based compound semiconductor element and manufacturing method thereof
US20070045638A1 (en) 2005-08-24 2007-03-01 Lumileds Lighting U.S., Llc III-nitride light emitting device with double heterostructure light emitting region
JP2007066981A (en) 2005-08-29 2007-03-15 Toshiba Corp Semiconductor device
JP4905125B2 (en) * 2006-01-26 2012-03-28 日亜化学工業株式会社 Nitride semiconductor laser device and manufacturing method thereof
JP4462251B2 (en) * 2006-08-17 2010-05-12 日立電線株式会社 III-V nitride semiconductor substrate and III-V nitride light emitting device
JP2008263023A (en) * 2007-04-11 2008-10-30 Sumitomo Electric Ind Ltd Manufacturing method of group iii-v compound semiconductor, schottky barrier diode, light-emitting diode, laser diode and manufacturing method of these
JP4341702B2 (en) 2007-06-21 2009-10-07 住友電気工業株式会社 Group III nitride semiconductor light emitting device
JP4478175B2 (en) * 2007-06-26 2010-06-09 株式会社東芝 Semiconductor device
JP2009218235A (en) * 2008-03-06 2009-09-24 Rohm Co Ltd Light emitting diode
JP5191843B2 (en) * 2008-09-09 2013-05-08 株式会社東芝 Semiconductor light emitting device and wafer
JP5319397B2 (en) * 2009-05-27 2013-10-16 シャープ株式会社 Semiconductor laser device
JP2011023398A (en) * 2009-07-13 2011-02-03 Sharp Corp Semiconductor light-emitting element
US8604461B2 (en) 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
KR101408610B1 (en) * 2009-12-21 2014-06-17 가부시끼가이샤 도시바 Nitride semiconductor light-emitting element and method for manufacturing same
JP5793292B2 (en) * 2010-02-17 2015-10-14 豊田合成株式会社 Semiconductor light emitting device
JP2011233751A (en) * 2010-04-28 2011-11-17 Panasonic Corp Nitride semiconductor transistor
JP2011238678A (en) * 2010-05-07 2011-11-24 Panasonic Corp Semiconductor light-emitting device
KR20120045919A (en) * 2010-11-01 2012-05-09 삼성엘이디 주식회사 Semiconductor light emitting device
US8653542B2 (en) * 2011-01-13 2014-02-18 Tsmc Solid State Lighting Ltd. Micro-interconnects for light-emitting diodes
JP5255106B2 (en) * 2011-10-24 2013-08-07 住友電気工業株式会社 Nitride semiconductor light emitting device
WO2014206429A1 (en) 2013-06-28 2014-12-31 Festo Ag & Co. Kg Linear drive and method for the production thereof
CN103824913B (en) * 2014-03-12 2016-08-24 合肥彩虹蓝光科技有限公司 A kind of Mg doped p-type GaN epitaxy growing method
US9873170B2 (en) * 2015-03-24 2018-01-23 Nichia Corporation Method of manufacturing light emitting element
DE102016112294A1 (en) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Semiconductor layer sequence
JP6669144B2 (en) * 2016-12-16 2020-03-18 日亜化学工業株式会社 Light emitting device manufacturing method
US11228160B2 (en) * 2018-11-15 2022-01-18 Sharp Kabushiki Kaisha AlGaInPAs-based semiconductor laser device and method for producing same
CN113594028A (en) * 2021-07-27 2021-11-02 中国科学院苏州纳米技术与纳米仿生研究所 Gallium nitride p-type doping method, manufacturing method of GaN-based PN junction and application of GaN-based PN junction

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3105981B2 (en) 1992-01-28 2000-11-06 シャープ株式会社 Semiconductor light emitting device
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US5656832A (en) * 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
JPH08111558A (en) 1994-10-07 1996-04-30 Hitachi Ltd Semiconductor laser element
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
JPH0936423A (en) 1995-07-24 1997-02-07 Toyoda Gosei Co Ltd Group iii nitride semiconductor light emitting element
DE69637304T2 (en) * 1995-03-17 2008-08-07 Toyoda Gosei Co., Ltd. A semiconductor light-emitting device consisting of a III-V nitride compound
JPH08293623A (en) 1995-04-21 1996-11-05 Rohm Co Ltd Method of manufacturing light emitting diode
JP3728332B2 (en) 1995-04-24 2005-12-21 シャープ株式会社 Compound semiconductor light emitting device
DE69602141T2 (en) 1995-08-28 1999-10-21 Mitsubishi Cable Ind Ltd Group III nitride compound light emitting device
JPH09129926A (en) 1995-08-28 1997-05-16 Mitsubishi Cable Ind Ltd Group iii nitride light emitting element
JP3457468B2 (en) * 1995-09-12 2003-10-20 株式会社東芝 Multilayer semiconductor device
KR100267839B1 (en) * 1995-11-06 2000-10-16 오가와 에이지 Nitride semiconductor device
JP3409958B2 (en) * 1995-12-15 2003-05-26 株式会社東芝 Semiconductor light emitting device
JP3441329B2 (en) 1996-02-26 2003-09-02 株式会社東芝 Gallium nitride based semiconductor device
JP3336855B2 (en) * 1996-03-27 2002-10-21 豊田合成株式会社 Group III nitride compound semiconductor light emitting device
JP3448450B2 (en) 1996-04-26 2003-09-22 三洋電機株式会社 Light emitting device and method for manufacturing the same
JP3753793B2 (en) 1996-06-14 2006-03-08 豊田合成株式会社 Group 3 nitride compound semiconductor light emitting device
JPH1012922A (en) 1996-06-19 1998-01-16 Toyoda Gosei Co Ltd Group iii nitride semiconductor light emitting element
JPH1012969A (en) * 1996-06-19 1998-01-16 Nichia Chem Ind Ltd Nitride semiconductor laser element
US5841802A (en) * 1996-08-30 1998-11-24 Mcdonnell Douglas Corporation Multiple, isolated strained quantum well semiconductor laser
US6031858A (en) * 1996-09-09 2000-02-29 Kabushiki Kaisha Toshiba Semiconductor laser and method of fabricating same
JPH10163523A (en) 1996-12-03 1998-06-19 Sumitomo Chem Co Ltd Manufacturing iii-v compd. semiconductor and light-emitting element
CN100485984C (en) * 1997-01-09 2009-05-06 日亚化学工业株式会社 Nitride semiconductor device
JPH10242565A (en) * 1997-02-21 1998-09-11 Pioneer Electron Corp Semiconductor laser
JPH10294531A (en) * 1997-02-21 1998-11-04 Toshiba Corp Nitride compound semiconductor light emitting element
SG63757A1 (en) 1997-03-12 1999-03-30 Hewlett Packard Co Adding impurities to improve the efficiency of allngan quantum well led's
JP3239812B2 (en) 1997-08-07 2001-12-17 日本電気株式会社 Crystal growth method of gallium nitride based semiconductor layer including InGaN layer, gallium nitride based light emitting device and method of manufacturing the same
JP3783411B2 (en) * 1997-08-15 2006-06-07 富士ゼロックス株式会社 Surface emitting semiconductor laser
JPH1168158A (en) * 1997-08-20 1999-03-09 Sanyo Electric Co Ltd Gallium nitride based compound semiconductor device
JP3429446B2 (en) 1998-03-19 2003-07-22 シャープ株式会社 Semiconductor light emitting device
JPH11251685A (en) * 1998-03-05 1999-09-17 Toshiba Corp Semiconductor laser
JPH11298090A (en) 1998-04-09 1999-10-29 Nichia Chem Ind Ltd Nitride semiconductor element
JPH11340559A (en) 1998-05-22 1999-12-10 Hitachi Ltd Semiconductor light-emitting element
US6423984B1 (en) * 1998-09-10 2002-07-23 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride compound semiconductor
JP3712870B2 (en) 1998-09-10 2005-11-02 豊田合成株式会社 Gallium nitride compound semiconductor light emitting device
JP2000156544A (en) * 1998-09-17 2000-06-06 Matsushita Electric Ind Co Ltd Manufacture of nitride semiconductor element
US6153894A (en) * 1998-11-12 2000-11-28 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device
JP2000208814A (en) 1998-11-12 2000-07-28 Sharp Corp Semiconductor light-emitting element
JP2000208875A (en) 1999-01-14 2000-07-28 Fujitsu Ltd Multiplex quantum well structure semiconductor light- emitting element
JP3446660B2 (en) * 1999-06-04 2003-09-16 日亜化学工業株式会社 Nitride semiconductor light emitting device
DE60043536D1 (en) * 1999-03-04 2010-01-28 Nichia Corp NITRIDHALBLEITERLASERELEMENT
JP3754226B2 (en) * 1999-03-25 2006-03-08 三洋電機株式会社 Semiconductor light emitting device
JP3567790B2 (en) 1999-03-31 2004-09-22 豊田合成株式会社 Group III nitride compound semiconductor light emitting device
JP3719047B2 (en) 1999-06-07 2005-11-24 日亜化学工業株式会社 Nitride semiconductor device
JP2000349377A (en) 1999-06-08 2000-12-15 Shimadzu Corp Ld stimulated solid-state laser
JP4625998B2 (en) 1999-07-27 2011-02-02 日亜化学工業株式会社 Nitride semiconductor laser device
JP2001077413A (en) 1999-09-06 2001-03-23 Showa Denko Kk Group iii nitride semiconductor light-emitting element and manufacture thereof
JP2001094212A (en) * 1999-09-24 2001-04-06 Sanyo Electric Co Ltd Semiconductor element and its manufacturing method
US6441393B2 (en) * 1999-11-17 2002-08-27 Lumileds Lighting U.S., Llc Semiconductor devices with selectively doped III-V nitride layers
JP2001168028A (en) * 1999-12-03 2001-06-22 Sony Corp Method of manufacturing nitride-based iii-v compound crystal, nitride-based iii-v compound crystalline substrate, nitride-based iii-v compound crystalline film, and method of manufacturing device
JP2001210915A (en) * 2000-01-24 2001-08-03 Sony Corp Semiconductor light-emitting device
JP3498697B2 (en) 2000-07-07 2004-02-16 日亜化学工業株式会社 Nitride semiconductor device
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power

Also Published As

Publication number Publication date
CN1252883C (en) 2006-04-19
US20040124500A1 (en) 2004-07-01
DE60234330D1 (en) 2009-12-24
EP1387453B1 (en) 2009-11-11
EP1387453A4 (en) 2008-10-22
WO2002084831A1 (en) 2002-10-24
KR20040018348A (en) 2004-03-03
KR100902109B1 (en) 2009-06-09
CA2444273C (en) 2012-05-22
US7230263B2 (en) 2007-06-12
JP2002374043A (en) 2002-12-26
ATE448589T1 (en) 2009-11-15
EP1387453A1 (en) 2004-02-04
JP4032803B2 (en) 2008-01-16
CN1502154A (en) 2004-06-02

Similar Documents

Publication Publication Date Title
CA2444273A1 (en) Gallium nitride semiconductor device
EP2259347A3 (en) Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
KR101428053B1 (en) Semiconductor light emitting device and fabrication method thereof
EP2262068A3 (en) Nitride semiconductor device
JP2009521816A5 (en)
CN102349167B (en) Nitride semiconductor light-emitting element, and method for manufacturing same
CA2322490A1 (en) Nitride semiconductor device
JP2005507155A5 (en)
EP1189289A4 (en) Nitride semiconductor device
WO2001039282A3 (en) Optical semiconductor device comprising a multiple quantum well structure
TW200625694A (en) Group Ⅲ nitride compound semiconductor light emitting device
CA2528719A1 (en) Nitride semiconductor light emitting device
KR970026601A (en) Nitride semiconductor devices
JP2009260398A5 (en)
KR20070104404A (en) Semiconductor light emitting element
JP2000133883A5 (en)
EP1564854A4 (en) Semiconductor light-emitting device and method for manufacturing same
JP2003101154A5 (en)
EP1251565A3 (en) Semiconductor light-receiving device
US7439609B2 (en) Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures
JP2004104088A5 (en)
WO2009015645A3 (en) Optoelectronic component having a layer stack
CN101290957B (en) Luminous element
EP1246264A3 (en) Nitride semiconductor device
US7915628B2 (en) Light emitting device and method of manufacturing the same

Legal Events

Date Code Title Description
EEER Examination request
MKEX Expiry

Effective date: 20220408