CA2430747A1 - Radiation emitter devices and method of making the same - Google Patents

Radiation emitter devices and method of making the same Download PDF

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Publication number
CA2430747A1
CA2430747A1 CA002430747A CA2430747A CA2430747A1 CA 2430747 A1 CA2430747 A1 CA 2430747A1 CA 002430747 A CA002430747 A CA 002430747A CA 2430747 A CA2430747 A CA 2430747A CA 2430747 A1 CA2430747 A1 CA 2430747A1
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CA
Canada
Prior art keywords
radiation emitter
zone
making
same
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002430747A
Other languages
French (fr)
Other versions
CA2430747C (en
Inventor
John K. Roberts
Spencer D. Reese
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Everlight Electronics Co Ltd
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Individual
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Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23010659&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CA2430747(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Individual filed Critical Individual
Publication of CA2430747A1 publication Critical patent/CA2430747A1/en
Application granted granted Critical
Publication of CA2430747C publication Critical patent/CA2430747C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Abstract

A radiation emitting device of the present invention includes at least one radiation emitter (35), first and second electrical lead (16-14) electricall y coupled to the radiation emitter (35), and an integral encapsulant (12) configured to encapsulate the radiation emitter (35) and portions of the electrical leads. The encapsulant (12) has at least a first zone (30) and a second zone (32), where the second zone exhibits at least one different characteristic from the first zone. This different characteristics is one selected from the group consisting of mechanical strength, thermal conductivity, thermal expansion coefficient, specific heat, oxygen permeability, moisture permeability, adhesive strength, and trnsmittance. Th e radiation emitter is preferably a LED.
CA002430747A 2001-01-31 2002-01-23 Radiation emitter devices and method of making the same Expired - Fee Related CA2430747C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26548901P 2001-01-31 2001-01-31
US60/265,489 2001-01-31
PCT/US2002/001761 WO2002061803A2 (en) 2001-01-31 2002-01-23 Radiation emitter devices and method of making the same

Publications (2)

Publication Number Publication Date
CA2430747A1 true CA2430747A1 (en) 2002-08-08
CA2430747C CA2430747C (en) 2008-05-20

Family

ID=23010659

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002430747A Expired - Fee Related CA2430747C (en) 2001-01-31 2002-01-23 Radiation emitter devices and method of making the same

Country Status (8)

Country Link
EP (1) EP1358668A4 (en)
JP (1) JP2004524681A (en)
KR (1) KR20030095391A (en)
CN (1) CN1502128A (en)
AU (1) AU2002243628A1 (en)
CA (1) CA2430747C (en)
MX (1) MXPA03006413A (en)
WO (1) WO2002061803A2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6921927B2 (en) * 2003-08-28 2005-07-26 Agilent Technologies, Inc. System and method for enhanced LED thermal conductivity
EP1617488A1 (en) * 2004-07-12 2006-01-18 Nan Ya Plastics Corporation Light emitting diode with improved heat dissipation and its manufacturing method
DE102005028748A1 (en) * 2004-10-25 2006-05-04 Osram Opto Semiconductors Gmbh Electromagnetic radiation emitting semiconductor device and device package
JP4622922B2 (en) * 2006-04-05 2011-02-02 パナソニック電工株式会社 LAMP MODULE FOR SWITCH DEVICE AND METHOD FOR MANUFACTURING THE SAME
WO2007139780A2 (en) * 2006-05-23 2007-12-06 Cree Led Lighting Solutions, Inc. Lighting device and method of making
JP2007324213A (en) * 2006-05-30 2007-12-13 Stanley Electric Co Ltd Semiconductor display device
US9178121B2 (en) 2006-12-15 2015-11-03 Cree, Inc. Reflective mounting substrates for light emitting diodes
KR101346342B1 (en) * 2007-03-30 2013-12-31 서울반도체 주식회사 Led lamp with low thermal resistance
GB2466633A (en) * 2008-12-12 2010-07-07 Glory Science Co Ltd Method of manufacturing a light emitting unit
CN101901794B (en) * 2009-05-25 2012-08-15 光宏精密股份有限公司 Plastic lead frame structure with reflective and conductor metal layer and preparation method thereof
KR20120090064A (en) * 2009-09-15 2012-08-16 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Led projector and method
US9385285B2 (en) 2009-09-17 2016-07-05 Koninklijke Philips N.V. LED module with high index lens
CN102623626B (en) * 2012-03-30 2015-12-09 刘敬梅 LED and module and display screen thereof
CN103256508A (en) * 2013-05-17 2013-08-21 浙江福斯特电子科技有限公司 Star-like LED light source and manufacturing method thereof
CN105340090B (en) * 2013-06-28 2018-11-09 亮锐控股有限公司 LED device
WO2014207635A1 (en) 2013-06-28 2014-12-31 Koninklijke Philips N.V. Light emitting diode device
DE102014202220B3 (en) 2013-12-03 2015-05-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for producing a cover substrate and coated radiation-emitting component
JP6458685B2 (en) * 2015-08-28 2019-01-30 日亜化学工業株式会社 Method for manufacturing light emitting device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2127239A5 (en) * 1971-03-01 1972-10-13 Radiotechnique Compelec
US3760237A (en) * 1972-06-21 1973-09-18 Gen Electric Solid state lamp assembly having conical light director
US4267559A (en) * 1979-09-24 1981-05-12 Bell Telephone Laboratories, Incorporated Low thermal impedance light-emitting diode package
SE501428C2 (en) * 1993-06-24 1995-02-13 Cma Microdialysis Res Ab Fluorescence detector and carrier for replaceable sample cuvette at a fluorescence detector
JPH11103097A (en) * 1997-07-30 1999-04-13 Rohm Co Ltd Semiconductor light emitting element
JP3447604B2 (en) * 1999-02-25 2003-09-16 株式会社シチズン電子 Surface mount type light emitting diode and method of manufacturing the same

Also Published As

Publication number Publication date
CA2430747C (en) 2008-05-20
WO2002061803A2 (en) 2002-08-08
MXPA03006413A (en) 2004-04-20
KR20030095391A (en) 2003-12-18
WO2002061803A3 (en) 2002-10-03
EP1358668A2 (en) 2003-11-05
EP1358668A4 (en) 2006-04-19
JP2004524681A (en) 2004-08-12
CN1502128A (en) 2004-06-02
AU2002243628A1 (en) 2002-08-12

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Effective date: 20210831

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