CA2406054A1 - Method of forming vias in silicon carbide and resulting devices and circuits - Google Patents

Method of forming vias in silicon carbide and resulting devices and circuits Download PDF

Info

Publication number
CA2406054A1
CA2406054A1 CA002406054A CA2406054A CA2406054A1 CA 2406054 A1 CA2406054 A1 CA 2406054A1 CA 002406054 A CA002406054 A CA 002406054A CA 2406054 A CA2406054 A CA 2406054A CA 2406054 A1 CA2406054 A1 CA 2406054A1
Authority
CA
Canada
Prior art keywords
substrate
silicon carbide
conductive
epilayer
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002406054A
Other languages
French (fr)
Other versions
CA2406054C (en
Inventor
Zoltan Ring
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2406054A1 publication Critical patent/CA2406054A1/en
Application granted granted Critical
Publication of CA2406054C publication Critical patent/CA2406054C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device on a first surface of a silicon carbide substrate and with at least one metal contact for the device on the first surface of the substrate. The opposite, second surface of the substrate is then ground and polished until it is substantially transparent. The method then includes masking the polished second surface of the silicon carbide substrate to define a predetermined location for a via that is opposite the device metal contact on the first surface; etching the desired via through the desired masked location until the etch reaches the metal contact on the first surface; and metallizing the via to provide an electrical contact from the second surface of the substrate to the metal contact and to the device on the first surface of the substrate.

Claims (16)

1. A semiconductor device formed in silicon carbide and comprising:

a silicon carbide substrate (20) having respective first (2G) and second (27) surfaces;
a via (37) extending entirely through said silicon carbide substrate;
a conductive contact (25) over said via on said first surface of said silicon carbido substrate;
a device (22, 24) Formed in said substrate and for which said conductive contact comprises an. electrical contact;
a silicon carbide epilayer on said first surface of said substrate with at least portions of said semiconductor device being on said epilayer and said conductive contact to said device being on said epilayer;
a polymer coating (31) covering said epilayer epilayer including said device;
and a transparent layer (34) selected from flee group consisting of indiumtin-oxide cad magnesium oxido on said second surface of said polished transparent substrate.
2. A semiconductor device formed in silicon carbide and comprising:

a silicon carbide substrate (20) having respective first (26) and second (27) surfaces;
a conductive via (40, 41) extending entirely through said silicon carbide substrate;
a conductive contact (25) over said via on said first surface of said silicon carbide substrate;
a device (22, 24) formed in said substrate and for which said conductive contact comprises an electrical contact;
a silicon carbide epilayer on said first surface of said substratal with at least portions of said semiconductor device being on said epilayer and said conductive contact to said device being on said epilayer; and a polymer coating (31) covering said entire epilayer including said device.
3. A circuit precursor according to Claim, 1 or Claim 2 and further comprising a layer of photoresist on said layer of indium-tin-oxide.
4. A circuit precursor according to Claim 1 or Claim 2 wherein said via extends through said precursor from said photoresist to said conductive contact for said device.
5. A device ox precursor according to Claim 1 or Claim 2 wherein at least some portions of said silicon carbide substrate are semi-insulating.
6. A circuit precursor according to Claim 1 or Claim 2 wherein said conductive contact comprises indium-tin-oxide.
7. A device or precursor according to Claim 1 or Claim 2 and comprising two or more vias extending entirely through said silicon carbide substrate, with each via being covered on said first surface of said substrate with a conductive contact that forms an electrical contact to a device in said substrate.
8. A semiconductor device according to Claim 2 wherein said silicon carbide substrate is semi-insulating; and further comprising:

a microwave circuit formed on or in said first surface of said substrate, said circuit including a plurality of conductive contacts on said first surface;
and a plurality of said vias extending entirely through said substrate with each of said conductive vias terminating at one of said conductive contacts for forming a complete electrical pathway between said first and second surfaces of said silicon carbide substrate.
9. A monolithic microwave integrated circuit (MMIC) according to Claim 8.
10. An MMIC according to Claim 9 oral further comprising:

at least portions of said microwave circuit being formed in said at least and epilayer;
said conductive contacts being formed on said epilayer; and said vias extending to said contacts through said epilayer as well as through said substrate.
11. A method of fabricating a device on a silicon carbide substrate (20) having first (26) and second (27) surfaces on opposite sides of the substrate;
the method comprising:
placing a conductive etch stop material (25) at a predetermined position on the first surface of the silicon carbide substrate;
grinding the second surface of the substrate;
polishing the ground surface placing a transparent layer (34) selected from the group consisting of indium-tin-oxide and magnesium, oxide an the polished surface;
placing a photoresist (35) on the transparent layer of indium-tin-oxide optically aligning a mask on the photoresist that develops the photoresist to open at a point optically aligned with the conductive etch stop material on the opposite surface of the substrate etching a via (37) in the substrate from the masked second surface until 1 the etched via reaches entirely through the substrate to the conductive etch stop material;
and incorporating the conductive etch stop material on the first surface of the substrata into a device (22, 24) on. the first surface of the substrate.
12. A fabrication method according to Claim 11 wherein the conductive etch stop material is incorporated into the device prior to the steps of masking and etching the substrate.
13. A fabrication method according to Claim 11 comprising metallizing the via to form a conductive connection to the device.
14. A method according to Claim 11 of fabricating an integrated circuit an the silicon carbide substrate while eliminating wire bonding that can otherwise cause undesired inductance, the method comprising:

fabricating a semiconductor device on the first surface of the silicon carbide substrate and with at least one metal contact far the device on the first surface of the substrate and with said metal contact forming said etch stop material; and metallizing the via to provide an electrical contact from the second surface of the substrate to the metal contact and to the device on the first surface of the substrate.
15. A fabricating method according to Claim 14 wherein the step of fabricating the metal contact on the first surface comprises depositing an indium-tin-oxide contact on the first surface.
16. A fabricating method according to Claim 15 further comprising covering the indium-tin-oxide contact with a gold coating.
CA2406054A 2000-04-11 2001-03-30 Method of forming vias in silicon carbide and resulting devices and circuits Expired - Lifetime CA2406054C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/546,821 US6475889B1 (en) 2000-04-11 2000-04-11 Method of forming vias in silicon carbide and resulting devices and circuits
US09/546,821 2000-04-11
PCT/US2001/010289 WO2001078120A1 (en) 2000-04-11 2001-03-30 Method of forming vias in silicon carbide and resulting devices and circuits

Publications (2)

Publication Number Publication Date
CA2406054A1 true CA2406054A1 (en) 2001-10-18
CA2406054C CA2406054C (en) 2010-12-21

Family

ID=24182160

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2406054A Expired - Lifetime CA2406054C (en) 2000-04-11 2001-03-30 Method of forming vias in silicon carbide and resulting devices and circuits

Country Status (11)

Country Link
US (4) US6475889B1 (en)
EP (2) EP1273032B1 (en)
JP (1) JP5142438B2 (en)
KR (1) KR100797130B1 (en)
CN (1) CN1197126C (en)
AT (1) ATE467231T1 (en)
AU (1) AU2001249659A1 (en)
CA (1) CA2406054C (en)
DE (1) DE60142035D1 (en)
TW (1) TW571383B (en)
WO (1) WO2001078120A1 (en)

Families Citing this family (140)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2797140B1 (en) * 1999-07-30 2001-11-02 Thomson Csf Sextant METHOD FOR MANUFACTURING THROUGH CONNECTIONS IN A SUBSTRATE AND SUBSTRATE PROVIDED WITH SUCH CONNECTIONS
US6475889B1 (en) * 2000-04-11 2002-11-05 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
US7125786B2 (en) * 2000-04-11 2006-10-24 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
US7892974B2 (en) 2000-04-11 2011-02-22 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
US6657237B2 (en) * 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
US7233028B2 (en) * 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US7214325B2 (en) 2001-03-23 2007-05-08 Lg Electronics Inc. Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatment
JP2003124189A (en) * 2001-10-10 2003-04-25 Fujitsu Ltd Method of manufacturing semiconductor device
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
US7148125B2 (en) * 2001-12-12 2006-12-12 Denso Corporation Method for manufacturing semiconductor power device
US6653214B1 (en) * 2002-01-03 2003-11-25 The United States Of America As Represented By The Secretary Of The Air Force Measured via-hole etching
US6846747B2 (en) * 2002-04-09 2005-01-25 Unaxis Usa Inc. Method for etching vias
US6982204B2 (en) * 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
JP4071615B2 (en) * 2002-12-20 2008-04-02 株式会社フジクラ Method for forming through electrode and substrate with through electrode
CN1729582A (en) 2002-12-20 2006-02-01 克里公司 Methods of forming electronic devices including semiconductor mesa structures and conductivity junctions and related devices
US20040206755A1 (en) * 2003-04-18 2004-10-21 Hadinger Peter James Microwave heating using distributed semiconductor sources
US7151277B2 (en) * 2003-07-03 2006-12-19 The Regents Of The University Of California Selective etching of silicon carbide films
US6933191B2 (en) * 2003-09-18 2005-08-23 International Business Machines Corporation Two-mask process for metal-insulator-metal capacitors and single mask process for thin film resistors
US7285433B2 (en) * 2003-11-06 2007-10-23 General Electric Company Integrated devices with optical and electrical isolation and method for making
US7901994B2 (en) * 2004-01-16 2011-03-08 Cree, Inc. Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
US7045404B2 (en) * 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
US7612390B2 (en) 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
JP2005235860A (en) * 2004-02-17 2005-09-02 Sanyo Electric Co Ltd Semiconductor device and manufacturing method thereof
WO2005083761A1 (en) * 2004-02-26 2005-09-09 Nec Corporation Ohmic electrode structure of nitride semiconductor device
US7173285B2 (en) * 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
SE527205C2 (en) * 2004-04-14 2006-01-17 Denso Corp Process for manufacturing semiconductor device with channel in silicon carbide semiconductor substrate
US7791061B2 (en) * 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
US7332365B2 (en) * 2004-05-18 2008-02-19 Cree, Inc. Method for fabricating group-III nitride devices and devices fabricated using method
US7084441B2 (en) * 2004-05-20 2006-08-01 Cree, Inc. Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
US20060017064A1 (en) * 2004-07-26 2006-01-26 Saxler Adam W Nitride-based transistors having laterally grown active region and methods of fabricating same
US7309660B2 (en) * 2004-09-16 2007-12-18 International Business Machines Corporation Buffer layer for selective SiGe growth for uniform nucleation
US7709859B2 (en) * 2004-11-23 2010-05-04 Cree, Inc. Cap layers including aluminum nitride for nitride-based transistors
US7456443B2 (en) 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
US7161194B2 (en) * 2004-12-06 2007-01-09 Cree, Inc. High power density and/or linearity transistors
US7355215B2 (en) * 2004-12-06 2008-04-08 Cree, Inc. Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies
US7563658B2 (en) * 2004-12-27 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7932111B2 (en) 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
US7465967B2 (en) * 2005-03-15 2008-12-16 Cree, Inc. Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
US8575651B2 (en) 2005-04-11 2013-11-05 Cree, Inc. Devices having thick semi-insulating epitaxial gallium nitride layer
US7626217B2 (en) * 2005-04-11 2009-12-01 Cree, Inc. Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
US7544963B2 (en) * 2005-04-29 2009-06-09 Cree, Inc. Binary group III-nitride based high electron mobility transistors
US7615774B2 (en) * 2005-04-29 2009-11-10 Cree.Inc. Aluminum free group III-nitride based high electron mobility transistors
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US9331192B2 (en) 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
US7361586B2 (en) * 2005-07-01 2008-04-22 Spansion Llc Preamorphization to minimize void formation
DE102005042074A1 (en) * 2005-08-31 2007-03-08 Forschungsverbund Berlin E.V. Method for producing plated-through holes in semiconductor wafers
JP4745007B2 (en) * 2005-09-29 2011-08-10 三洋電機株式会社 Semiconductor device and manufacturing method thereof
TWI327761B (en) * 2005-10-07 2010-07-21 Rohm & Haas Elect Mat Method for making semiconductor wafer and wafer holding article
JP4612534B2 (en) * 2005-12-01 2011-01-12 三菱電機株式会社 Manufacturing method of semiconductor device
US7307348B2 (en) * 2005-12-07 2007-12-11 Micron Technology, Inc. Semiconductor components having through wire interconnects (TWI)
KR100763670B1 (en) * 2005-12-28 2007-10-04 동부일렉트로닉스 주식회사 Method for forming semiconductor device
WO2007081964A2 (en) * 2006-01-10 2007-07-19 Cree, Inc. Silicon carbide dimpled substrate
US7709269B2 (en) 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US7453154B2 (en) * 2006-03-29 2008-11-18 Delphi Technologies, Inc. Carbon nanotube via interconnect
JP4812512B2 (en) * 2006-05-19 2011-11-09 オンセミコンダクター・トレーディング・リミテッド Manufacturing method of semiconductor device
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
KR101529331B1 (en) 2006-08-17 2015-06-16 크리 인코포레이티드 High power insulated gate bipolar transistors
JP5091445B2 (en) * 2006-09-15 2012-12-05 株式会社東芝 Semiconductor device and manufacturing method thereof
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
JP5022683B2 (en) * 2006-11-30 2012-09-12 株式会社東芝 Manufacturing method of semiconductor device
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US8866150B2 (en) * 2007-05-31 2014-10-21 Cree, Inc. Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts
JP5298559B2 (en) * 2007-06-29 2013-09-25 富士通株式会社 Semiconductor device and manufacturing method thereof
US8617997B2 (en) * 2007-08-21 2013-12-31 Cree, Inc. Selective wet etching of gold-tin based solder
US20090072269A1 (en) * 2007-09-17 2009-03-19 Chang Soo Suh Gallium nitride diodes and integrated components
US7687825B2 (en) * 2007-09-18 2010-03-30 Cree, Inc. Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US7939449B2 (en) * 2008-06-03 2011-05-10 Micron Technology, Inc. Methods of forming hybrid conductive vias including small dimension active surface ends and larger dimension back side ends
US7952982B2 (en) * 2008-06-30 2011-05-31 Intel Corporation Data storage medium, data storage device containing same, and method of manufacturing data storage device containing same
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
JP2010103300A (en) * 2008-10-23 2010-05-06 Sanyo Electric Co Ltd Semiconductor device, and method of manufacturing the same
JP5239744B2 (en) * 2008-10-27 2013-07-17 ソニー株式会社 Program sending device, switcher control method, and computer program
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
JP2010182764A (en) * 2009-02-04 2010-08-19 Sony Corp Semiconductor element, method of manufacturing the same, and electronic apparatus
JP4905474B2 (en) * 2009-02-04 2012-03-28 ソニー株式会社 Video processing apparatus, video processing method, and program
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8598713B2 (en) * 2009-07-22 2013-12-03 Newport Fab, Llc Deep silicon via for grounding of circuits and devices, emitter ballasting and isolation
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
JP5179455B2 (en) * 2009-10-27 2013-04-10 Ｓｐｐテクノロジーズ株式会社 Plasma etching method
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
JP5649356B2 (en) * 2010-07-28 2015-01-07 住友電工デバイス・イノベーション株式会社 Semiconductor device and manufacturing method thereof
JP5649355B2 (en) * 2010-07-28 2015-01-07 住友電工デバイス・イノベーション株式会社 Semiconductor device and manufacturing method thereof
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
CN102169552A (en) * 2011-01-28 2011-08-31 上海集成电路研发中心有限公司 Radio frequency identification tag and manufacturing method thereof
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
WO2013055423A2 (en) * 2011-07-18 2013-04-18 Bae Systems Information And Electronic Systems Integration Inc. Method and design of an rf thru-via interconnect
KR20130013820A (en) 2011-07-29 2013-02-06 한국전자통신연구원 Semiconductor apparatus and manufacturing method thereof
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
JP2014531752A (en) 2011-09-11 2014-11-27 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． High current density power module with transistors having improved layout
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
EP2897296B1 (en) 2012-09-14 2019-05-08 Nec Corporation Transmitter
US9159612B2 (en) 2012-10-15 2015-10-13 Electronics And Telecommunications Research Institute Semiconductor device and method of fabricating the same
US9171730B2 (en) 2013-02-15 2015-10-27 Transphorm Inc. Electrodes for semiconductor devices and methods of forming the same
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
WO2014149780A1 (en) * 2013-03-15 2014-09-25 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
WO2015009514A1 (en) 2013-07-19 2015-01-22 Transphorm Inc. Iii-nitride transistor including a p-type depleting layer
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
CN104867813B (en) * 2015-04-08 2018-07-10 信利（惠州）智能显示有限公司 The production method of nonmetallic pattern
WO2017123999A1 (en) 2016-01-15 2017-07-20 Transphorm Inc. Enhancement mode iii-nitride devices having an al(1-x)sixo gate insulator
JP2017157585A (en) * 2016-02-29 2017-09-07 株式会社アドバンテスト Semiconductor device and method for manufacturing the same
US10224401B2 (en) 2016-05-31 2019-03-05 Transphorm Inc. III-nitride devices including a graded depleting layer
US10892356B2 (en) 2016-06-24 2021-01-12 Cree, Inc. Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
US11430882B2 (en) 2016-06-24 2022-08-30 Wolfspeed, Inc. Gallium nitride high-electron mobility transistors with p-type layers and process for making the same
US20200098737A1 (en) * 2018-09-25 2020-03-26 Intel Corporation Stacked-substrate fpga semiconductor devices
CN109524304B (en) * 2018-11-21 2021-04-27 北京国联万众半导体科技有限公司 Method for processing silicon carbide gate dielectric fluorine plasma and silicon carbide power device
US11217700B2 (en) * 2018-12-07 2022-01-04 Cornell University Micron scale tin oxide-based semiconductor devices
US11658038B2 (en) * 2020-05-13 2023-05-23 Tokyo Electron Limited Method for dry etching silicon carbide films for resist underlayer applications
CN112216600A (en) * 2020-10-13 2021-01-12 西安交通大学 Method for preparing large-area SiC nano-pillar array rapidly, controllably and at low cost
CN114759098B (en) * 2020-12-29 2023-12-01 隆基绿能科技股份有限公司 Silicon carbide photovoltaic device
US20220367695A1 (en) * 2021-05-17 2022-11-17 Cree, Inc. Circuits and group iii-nitride transistors with buried p-layers and controlled gate voltages and methods thereof
US11929428B2 (en) 2021-05-17 2024-03-12 Wolfspeed, Inc. Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4866507A (en) * 1986-05-19 1989-09-12 International Business Machines Corporation Module for packaging semiconductor integrated circuit chips on a base substrate
US4771017A (en) * 1987-06-23 1988-09-13 Spire Corporation Patterning process
US4874500A (en) 1987-07-15 1989-10-17 Sri International Microelectrochemical sensor and sensor array
US5187547A (en) 1988-05-18 1993-02-16 Sanyo Electric Co., Ltd. Light emitting diode device and method for producing same
JPH0684551B2 (en) * 1988-08-22 1994-10-26 昭和電工株式会社 Process for producing praseodymium or praseodymium-containing alloy
US4868507A (en) * 1988-11-23 1989-09-19 Minnesota Mining And Manufacturing Company Microcomputer controlled resistance fault locator circuit
US4951014A (en) 1989-05-26 1990-08-21 Raytheon Company High power microwave circuit packages
US5185292A (en) * 1989-07-20 1993-02-09 Harris Corporation Process for forming extremely thin edge-connectable integrated circuit structure
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US5449953A (en) 1990-09-14 1995-09-12 Westinghouse Electric Corporation Monolithic microwave integrated circuit on high resistivity silicon
US5264713A (en) * 1991-06-14 1993-11-23 Cree Research, Inc. Junction field-effect transistor formed in silicon carbide
JP2901788B2 (en) 1991-07-19 1999-06-07 ローム株式会社 Silicon carbide semiconductor device
US5662770A (en) * 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
US5343071A (en) 1993-04-28 1994-08-30 Raytheon Company Semiconductor structures having dual surface via holes
US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
US5406122A (en) 1993-10-27 1995-04-11 Hughes Aircraft Company Microelectronic circuit structure including conductor bridges encapsulated in inorganic dielectric passivation layer
US6028348A (en) * 1993-11-30 2000-02-22 Texas Instruments Incorporated Low thermal impedance integrated circuit
FR2738394B1 (en) * 1995-09-06 1998-06-26 Nippon Denso Co SILICON CARBIDE SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF
JP3051663B2 (en) * 1995-09-12 2000-06-12 一 上野 Bird catcher
US5672546A (en) 1995-12-04 1997-09-30 General Electric Company Semiconductor interconnect method and structure for high temperature applications
US5914508A (en) 1995-12-21 1999-06-22 The Whitaker Corporation Two layer hermetic-like coating process for on-wafer encapsulation of GaAs MMIC's
US5935733A (en) * 1996-04-05 1999-08-10 Intel Corporation Photolithography mask and method of fabrication
US5807783A (en) * 1996-10-07 1998-09-15 Harris Corporation Surface mount die by handle replacement
JPH10161300A (en) * 1996-11-29 1998-06-19 Hoya Corp X-ray mask blank, x-ray mask and pattern transfer method
JP3920399B2 (en) * 1997-04-25 2007-05-30 株式会社東芝 Multi-chip semiconductor device chip alignment method, and multi-chip semiconductor device manufacturing method and manufacturing apparatus
US5939732A (en) 1997-05-22 1999-08-17 Kulite Semiconductor Products, Inc. Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof
JP4264992B2 (en) * 1997-05-28 2009-05-20 ソニー株式会社 Manufacturing method of semiconductor device
FR2765398B1 (en) 1997-06-25 1999-07-30 Commissariat Energie Atomique STRUCTURE WITH MICROELECTRONIC COMPONENT IN SEMICONDUCTOR MATERIAL DIFFICULT OF ENGRAVING AND WITH METAL HOLES
US5963818A (en) * 1997-09-17 1999-10-05 Motorola, Inc Combined trench isolation and inlaid process for integrated circuit formation
US6221537B1 (en) * 1997-12-19 2001-04-24 Motorola, Inc. Method of forming mask with angled struts of reduced height
JPH10229074A (en) 1998-03-09 1998-08-25 Hitachi Ltd Microwave plasma etching system
JP4186337B2 (en) * 1998-09-30 2008-11-26 株式会社デンソー Silicon carbide semiconductor device and manufacturing method thereof
JP2000174166A (en) * 1998-10-02 2000-06-23 Sumitomo Electric Ind Ltd Semiconductor mounting package
US6475889B1 (en) * 2000-04-11 2002-11-05 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits

Also Published As

Publication number Publication date
KR100797130B1 (en) 2008-01-22
EP1273032A1 (en) 2003-01-08
KR20020093901A (en) 2002-12-16
EP1273032B1 (en) 2010-05-05
ATE467231T1 (en) 2010-05-15
DE60142035D1 (en) 2010-06-17
EP2182548B1 (en) 2012-11-07
CA2406054C (en) 2010-12-21
JP5142438B2 (en) 2013-02-13
US6649497B2 (en) 2003-11-18
US20020066960A1 (en) 2002-06-06
WO2001078120A1 (en) 2001-10-18
EP2182548A2 (en) 2010-05-05
US6946739B2 (en) 2005-09-20
AU2001249659A1 (en) 2001-10-23
US20040241970A1 (en) 2004-12-02
US6475889B1 (en) 2002-11-05
JP2003530716A (en) 2003-10-14
CN1197126C (en) 2005-04-13
US6515303B2 (en) 2003-02-04
EP2182548A3 (en) 2010-08-11
US20020055265A1 (en) 2002-05-09
CN1429400A (en) 2003-07-09
TW571383B (en) 2004-01-11

Similar Documents

Publication Publication Date Title
CA2406054A1 (en) Method of forming vias in silicon carbide and resulting devices and circuits
US5731222A (en) Externally connected thin electronic circuit having recessed bonding pads
JP3904228B2 (en) Manufacturing method of three-dimensional circuit device
TW200636985A (en) Method of forming vias in silicon carbide and resulting devices and circuits
KR100723077B1 (en) Waveguide structures integrated with standard cmos circuitry and methods for making the same
WO2002061827A1 (en) Semiconductor device and its manufacturing method
WO2000007218A3 (en) Method for manufacturing a semiconductor device having a metal layer floating over a substrate
JP2002512436A (en) Integrated circuit device
WO2002054446A3 (en) Barbed vias for electrical and mechanical connection between conductive layers in semiconductor devices
EP0583877B1 (en) Bond pad structure of an integrated circuit and manufacturing method thereof
EP0769813A3 (en) Integrated circuit with planarized dielectric layer between successive polysilicon layers
EP1274125A3 (en) Circuit board, method for manufacturing same, and high-output module
US20060030083A1 (en) Semiconductor device and fabricating method thereof
ATE342608T1 (en) PRODUCTION METHOD OF A HYBRID INTEGRATED CIRCUIT HAVING A SEMICONDUCTOR COMPONENT AND A PIEZOELECTRIC FILTER
US20040175918A1 (en) Novel formation of an aluminum contact pad free of plasma induced damage by applying CMP
WO1999059206A2 (en) Semiconductor device and method for making the device
WO2003012832A3 (en) Multiple epitaxial region substrate and technique for making the same
KR100450243B1 (en) A manufacturing method of bump for semiconductor device
KR100372820B1 (en) Double silicon mosfet and method of manufacturing the same
KR100880794B1 (en) Inductor of secmiconductor device and method for forming the same
KR100405194B1 (en) A fabrication method of selectively oxidized porous silicon(SOPS) layer, a multi-chip package of using the same, and a semiconductor substrate
US20020030278A1 (en) Metallization arrangement for semiconductor structure and corresponding fabrication method
US7125796B2 (en) Plasma etch process for multilayer vias having an organic layer with vertical sidewalls
KR100450242B1 (en) A bump mask and a manufacturing method of bump for semiconductor device
US20050136664A1 (en) Novel process for improved hot carrier injection

Legal Events

Date Code Title Description
EEER Examination request
MKEX Expiry

Effective date: 20210330