CA2393791A1 - Electrically addressable volatile and non-volatile molecular-based switching devices - Google Patents
Electrically addressable volatile and non-volatile molecular-based switching devices Download PDFInfo
- Publication number
- CA2393791A1 CA2393791A1 CA002393791A CA2393791A CA2393791A1 CA 2393791 A1 CA2393791 A1 CA 2393791A1 CA 002393791 A CA002393791 A CA 002393791A CA 2393791 A CA2393791 A CA 2393791A CA 2393791 A1 CA2393791 A1 CA 2393791A1
- Authority
- CA
- Canada
- Prior art keywords
- switching device
- solid state
- molecular switching
- state molecular
- volatile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/14—Use of different molecule structures as storage states, e.g. part of molecule being rotated
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/701—Organic molecular electronic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
Abstract
Volatile and non-volatile solid state molecular switching devices which are electrically addressable and may be used in memory cells, routing circuits, inverters and field programmable devices which may or may not be designed to exhibit diode behavior. The molecular switching devices include certain (2) catenanes as bistable molecules which are sandwiched between two switch terminals. The switches are extremely small and have dimensions which range from several microns down to a few nanometers.
Claims (18)
1. A solid state molecular switching device comprising:
a first terminal;
a second terminal; and a bistable molecules sandwiched between said first and second terminals wherein said bistable molecule is a [2] catenane.
a first terminal;
a second terminal; and a bistable molecules sandwiched between said first and second terminals wherein said bistable molecule is a [2] catenane.
2. A solid state molecular switching device according to claim 1 wherein said switching device is a volatile molecular switching device.
3. A solid state molecular switching device according to claim 2 which is present in a memory cell, routing circuit, inverter or field programmable device array.
4. A solid state molecular switching device according to claim 3 wherein said memory cell, routing circuit, inverter or field programmable device array exhibits diode behavior.
5. A solid state molecular switching device according to claim 1 wherein said switching device is a non-volatile molecular switching device.
6. A solid state molecular switching device according to claim 5 which is present in a memory cell, routing circuit, inverter or field programmable device array.
7. A solid state molecular switching device according to claim 6 wherein said memory cell, routing circuit, inverter or field programmable device array exhibits diode behavior.
8. A solid state molecular switching device according to claim 1 wherein said [2] catenane is C70H76F24N4O10P4S4.
9. A method for making a solid state molecular switching device which comprises a step of forming a monolayer of a [2] catenane molecules which are sandwiched between two terminals, said monolayer formation step comprising the step of mixing a sufficient amount of counter ions with [2]
cantenane molecules to provide a film forming mixture which is electrically neutral and which is suitable for use in forming said monolayer of [2]
catenane molecules.
cantenane molecules to provide a film forming mixture which is electrically neutral and which is suitable for use in forming said monolayer of [2]
catenane molecules.
10. A method for making a solid state molecular switching device according to claim 9 wherein said [2] catenane is C70H76F24N4O10P4S4.
11. A method for making a solid state molecular switching device according to claim 9 wherein said counter ion is selected from the group consisting of amphiphilic sulfate anions, amphiphilic carboxylate and amphiphilic phospholipid anions.
12. A method for making a solid state molecular switching device according to claim 9 wherein said counter ion is selected from the group consisting of amphiphilic sulfate anions, amphiphilic carboxylate and amphiphilic phospholipid anions.
13. A method for making a solid state molecular switching device according to claim 10 wherein said counter ion is PF6-.
14. A solid state molecular switching device comprising a first terminal, a second terminal and a layer of [2] catenane molecules sandwiched between said first and second terminals wherein said layer of [2] catenane molecules is made according to the method of claim 9.
15. A solid state molecular switching device according to claim 14 wherein said switching device is a volatile molecular switching device.
16. A solid state molecular switching device according to claim 15 which is present in a memory cell, routing circuit, inverter or field programmable device array.
17. A solid state molecular switching device according to claim 14 wherein said switching device is a non-volatile molecular switching device.
18. A solid state molecular switching device according to claim 17 which is present in a memory cell, routing circuit, inverter or field programmable device array.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/459,246 | 1999-12-10 | ||
US09/459,246 US6198655B1 (en) | 1999-12-10 | 1999-12-10 | Electrically addressable volatile non-volatile molecular-based switching devices |
PCT/US2000/018805 WO2001043138A1 (en) | 1999-12-10 | 2000-07-10 | Electrically addressable volatile and non-volatile molecular-based switching devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2393791A1 true CA2393791A1 (en) | 2001-06-14 |
CA2393791C CA2393791C (en) | 2010-06-08 |
Family
ID=23824000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA2393791A Expired - Fee Related CA2393791C (en) | 1999-12-10 | 2000-07-10 | Electrically addressable volatile and non-volatile molecular-based switching devices |
Country Status (9)
Country | Link |
---|---|
US (1) | US6198655B1 (en) |
EP (1) | EP1236206B1 (en) |
JP (1) | JP4707295B2 (en) |
AT (1) | ATE339765T1 (en) |
AU (1) | AU6083600A (en) |
CA (1) | CA2393791C (en) |
DE (1) | DE60030761T2 (en) |
HK (1) | HK1049228A1 (en) |
WO (1) | WO2001043138A1 (en) |
Families Citing this family (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6314019B1 (en) * | 1999-03-29 | 2001-11-06 | Hewlett-Packard Company | Molecular-wire crossbar interconnect (MWCI) for signal routing and communications |
CA2417462A1 (en) * | 2000-07-25 | 2002-01-31 | Wm. Marsh Rice University | Programmable molecular device |
US7714438B2 (en) * | 2000-12-14 | 2010-05-11 | Hewlett-Packard Development Company, L.P. | Bistable molecular mechanical devices with a band gap change activated by an electrical field for electronic switching, gating, and memory applications |
US6701035B2 (en) * | 2000-12-14 | 2004-03-02 | Hewlett-Packard Development Company, L.P. | Electric-field actuated chromogenic materials based on molecules with a rotating middle segment for applications in photonic switching |
US6663797B2 (en) * | 2000-12-14 | 2003-12-16 | Hewlett-Packard Development Company, L.P. | Stabilization of configurable molecular mechanical devices |
US6763158B1 (en) * | 2000-12-14 | 2004-07-13 | Hewlett-Packard Development Company, L.P. | Molecular mechanical devices with a band gap change activated by an electric field for optical switching applications |
US7141299B2 (en) * | 2001-01-05 | 2006-11-28 | The Ohio State University Research Foundation | Electronic junction devices featuring redox electrodes |
US6541309B2 (en) * | 2001-03-21 | 2003-04-01 | Hewlett-Packard Development Company Lp | Fabricating a molecular electronic device having a protective barrier layer |
WO2002086200A1 (en) * | 2001-04-23 | 2002-10-31 | Universität Basel | Production method for atomic and molecular patterns on surfaces and nanostructured devices |
US6432740B1 (en) * | 2001-06-28 | 2002-08-13 | Hewlett-Packard Company | Fabrication of molecular electronic circuit by imprinting |
US6643165B2 (en) | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
US6924538B2 (en) * | 2001-07-25 | 2005-08-02 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
US6706402B2 (en) * | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
US6919592B2 (en) * | 2001-07-25 | 2005-07-19 | Nantero, Inc. | Electromechanical memory array using nanotube ribbons and method for making same |
US7566478B2 (en) * | 2001-07-25 | 2009-07-28 | Nantero, Inc. | Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US6835591B2 (en) * | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
US6911682B2 (en) | 2001-12-28 | 2005-06-28 | Nantero, Inc. | Electromechanical three-trace junction devices |
US6574130B2 (en) | 2001-07-25 | 2003-06-03 | Nantero, Inc. | Hybrid circuit having nanotube electromechanical memory |
US7259410B2 (en) | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
US6458621B1 (en) | 2001-08-01 | 2002-10-01 | Hewlett-Packard Company | Batch fabricated molecular electronic devices with cost-effective lithographic electrodes |
US7175961B2 (en) | 2001-10-24 | 2007-02-13 | Hewlett-Packard Development Company, L.P. | Photopatternable molecular circuitry |
US7020355B2 (en) * | 2001-11-02 | 2006-03-28 | Massachusetts Institute Of Technology | Switchable surfaces |
US6756296B2 (en) | 2001-12-11 | 2004-06-29 | California Institute Of Technology | Method for lithographic processing on molecular monolayer and multilayer thin films |
US6784028B2 (en) | 2001-12-28 | 2004-08-31 | Nantero, Inc. | Methods of making electromechanical three-trace junction devices |
US7176505B2 (en) * | 2001-12-28 | 2007-02-13 | Nantero, Inc. | Electromechanical three-trace junction devices |
JP3736483B2 (en) * | 2002-03-20 | 2006-01-18 | ソニー株式会社 | Magnetic memory device using ferromagnetic tunnel junction element |
US7189433B2 (en) * | 2002-04-05 | 2007-03-13 | International Business Machines Corporation | Process for preparing a film having alternatively monolayers of a metal-metal bonded complex monolayer and an organic monolayer by layer-by layer growth |
US6646285B1 (en) | 2002-04-05 | 2003-11-11 | International Business Machines Corporation | Molecular electronic device using metal-metal bonded complexes |
US7335395B2 (en) * | 2002-04-23 | 2008-02-26 | Nantero, Inc. | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US6847541B2 (en) * | 2002-06-07 | 2005-01-25 | Mitsubishi Chemical Corporation | Information storage device, and information storage method and information regeneration method employing the information storage device |
DE10227850A1 (en) * | 2002-06-21 | 2004-01-15 | Infineon Technologies Ag | Circuit element, useful as memory, comprises a monomolecular layer of redox-active bis-pyridinium molecules situated between conductive layers |
US7662313B2 (en) * | 2002-09-05 | 2010-02-16 | Nanosys, Inc. | Oriented nanostructures and methods of preparing |
US6847047B2 (en) * | 2002-11-04 | 2005-01-25 | Advanced Micro Devices, Inc. | Methods that facilitate control of memory arrays utilizing zener diode-like devices |
US7560136B2 (en) * | 2003-01-13 | 2009-07-14 | Nantero, Inc. | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US6944054B2 (en) * | 2003-03-28 | 2005-09-13 | Nantero, Inc. | NRAM bit selectable two-device nanotube array |
US7113426B2 (en) * | 2003-03-28 | 2006-09-26 | Nantero, Inc. | Non-volatile RAM cell and array using nanotube switch position for information state |
US7075141B2 (en) * | 2003-03-28 | 2006-07-11 | Nantero, Inc. | Four terminal non-volatile transistor device |
US7294877B2 (en) * | 2003-03-28 | 2007-11-13 | Nantero, Inc. | Nanotube-on-gate FET structures and applications |
US6995046B2 (en) * | 2003-04-22 | 2006-02-07 | Nantero, Inc. | Process for making byte erasable devices having elements made with nanotubes |
US7045421B2 (en) * | 2003-04-22 | 2006-05-16 | Nantero, Inc. | Process for making bit selectable devices having elements made with nanotubes |
US7274064B2 (en) * | 2003-06-09 | 2007-09-25 | Nanatero, Inc. | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
TW200518337A (en) * | 2003-06-09 | 2005-06-01 | Nantero Inc | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
US7289357B2 (en) | 2003-08-13 | 2007-10-30 | Nantero, Inc. | Isolation structure for deflectable nanotube elements |
WO2005084164A2 (en) * | 2003-08-13 | 2005-09-15 | Nantero, Inc. | Nanotube-based switching elements and logic circuits |
EP1665278A4 (en) * | 2003-08-13 | 2007-11-07 | Nantero Inc | Nanotube-based switching elements with multiple controls and circuits made from same |
US7115960B2 (en) * | 2003-08-13 | 2006-10-03 | Nantero, Inc. | Nanotube-based switching elements |
WO2005017967A2 (en) | 2003-08-13 | 2005-02-24 | Nantero, Inc. | Nanotube device structure and methods of fabrication |
US20050084204A1 (en) * | 2003-10-16 | 2005-04-21 | Zhang-Lin Zhou | Digital dyes based on electrochemical redox reactions |
JP2005136324A (en) * | 2003-10-31 | 2005-05-26 | Osaka Kyoiku Univ | Nonvolatile memory and erasing method |
KR100560431B1 (en) * | 2003-12-23 | 2006-03-13 | 한국전자통신연구원 | Molecular switching devices |
US7528437B2 (en) * | 2004-02-11 | 2009-05-05 | Nantero, Inc. | EEPROMS using carbon nanotubes for cell storage |
US7737433B2 (en) | 2004-03-08 | 2010-06-15 | The Ohio State University Research Foundation | Electronic junction devices featuring redox electrodes |
US7330369B2 (en) * | 2004-04-06 | 2008-02-12 | Bao Tran | NANO-electronic memory array |
US20050218398A1 (en) * | 2004-04-06 | 2005-10-06 | Availableip.Com | NANO-electronics |
US7709880B2 (en) * | 2004-06-09 | 2010-05-04 | Nantero, Inc. | Field effect devices having a gate controlled via a nanotube switching element |
US7288970B2 (en) * | 2004-06-18 | 2007-10-30 | Nantero, Inc. | Integrated nanotube and field effect switching device |
US7164744B2 (en) | 2004-06-18 | 2007-01-16 | Nantero, Inc. | Nanotube-based logic driver circuits |
US7161403B2 (en) | 2004-06-18 | 2007-01-09 | Nantero, Inc. | Storage elements using nanotube switching elements |
US7652342B2 (en) * | 2004-06-18 | 2010-01-26 | Nantero, Inc. | Nanotube-based transfer devices and related circuits |
US6955937B1 (en) | 2004-08-12 | 2005-10-18 | Lsi Logic Corporation | Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell |
EP1807919A4 (en) * | 2004-11-02 | 2011-05-04 | Nantero Inc | Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches |
US20100147657A1 (en) * | 2004-11-02 | 2010-06-17 | Nantero, Inc. | Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches |
US8362525B2 (en) * | 2005-01-14 | 2013-01-29 | Nantero Inc. | Field effect device having a channel of nanofabric and methods of making same |
US7598544B2 (en) * | 2005-01-14 | 2009-10-06 | Nanotero, Inc. | Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same |
US20070116627A1 (en) * | 2005-01-25 | 2007-05-24 | California Institute Of Technology | Carbon nanotube compositions and devices and methods of making thereof |
JP5205062B2 (en) * | 2005-02-10 | 2013-06-05 | イエダ リサーチ アンド デベロップメント カンパニー リミテッド | Redox active structure and device using the same |
US7671398B2 (en) * | 2005-02-23 | 2010-03-02 | Tran Bao Q | Nano memory, light, energy, antenna and strand-based systems and methods |
US20080138635A1 (en) * | 2005-03-02 | 2008-06-12 | Zhikuan Chen | Conjugated Organic Molecules for Molecular Electronic Devices |
JP5049483B2 (en) * | 2005-04-22 | 2012-10-17 | パナソニック株式会社 | ELECTRIC ELEMENT, MEMORY DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT |
US7394687B2 (en) * | 2005-05-09 | 2008-07-01 | Nantero, Inc. | Non-volatile-shadow latch using a nanotube switch |
TWI324773B (en) * | 2005-05-09 | 2010-05-11 | Nantero Inc | Non-volatile shadow latch using a nanotube switch |
US7479654B2 (en) * | 2005-05-09 | 2009-01-20 | Nantero, Inc. | Memory arrays using nanotube articles with reprogrammable resistance |
US8198436B2 (en) * | 2005-09-01 | 2012-06-12 | The University Of Miami | Colorimetric detection of cyanide with a chromogenic oxazine |
DE102006004218B3 (en) * | 2006-01-30 | 2007-08-16 | Infineon Technologies Ag | Electromechanical storage device and method for manufacturing an electromechanical storage device |
US7755424B2 (en) * | 2006-04-03 | 2010-07-13 | Blaise Laurent Mouttet | Operational amplifier with resistance switch crossbar feedback |
US8183554B2 (en) * | 2006-04-03 | 2012-05-22 | Blaise Laurent Mouttet | Symmetrical programmable memresistor crossbar structure |
US7576565B2 (en) * | 2006-04-03 | 2009-08-18 | Blaise Laurent Mouttet | Crossbar waveform driver circuit |
US8502198B2 (en) * | 2006-04-28 | 2013-08-06 | Hewlett-Packard Development Company, L.P. | Switching device and methods for controlling electron tunneling therein |
US8101942B2 (en) * | 2006-09-19 | 2012-01-24 | The United States Of America As Represented By The Secretary Of Commerce | Self-assembled monolayer based silver switches |
US8304537B2 (en) * | 2007-10-17 | 2012-11-06 | The University Of Miami | Use of oxazine compounds for making chromogenic materials |
EP2870644A2 (en) | 2012-07-09 | 2015-05-13 | Yeda Research and Development Co. Ltd. | Logic circuits with plug and play solid-state molecular chips |
IL229525A0 (en) | 2013-11-20 | 2014-01-30 | Yeda Res & Dev | Metal-based tris-bipyridyl complexes and uses thereof in electrochromic applications |
JP2016063113A (en) | 2014-09-19 | 2016-04-25 | 株式会社東芝 | Nonvolatile semiconductor memory device |
EP3652175A4 (en) * | 2017-07-11 | 2021-03-24 | Northwestern University | Mechanically interlocked air-stable radicals |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0260166A (en) * | 1988-08-26 | 1990-02-28 | Nippon Telegr & Teleph Corp <Ntt> | Memory element provided with thin fulvalenes film |
US5444651A (en) * | 1991-10-30 | 1995-08-22 | Sharp Kabushiki Kaisha | Non-volatile memory device |
KR100296613B1 (en) * | 1997-02-06 | 2001-09-22 | 포만 제프리 엘 | Molecule, layered medium and method for creating a pattern |
-
1999
- 1999-12-10 US US09/459,246 patent/US6198655B1/en not_active Expired - Lifetime
-
2000
- 2000-07-10 CA CA2393791A patent/CA2393791C/en not_active Expired - Fee Related
- 2000-07-10 WO PCT/US2000/018805 patent/WO2001043138A1/en active IP Right Grant
- 2000-07-10 AU AU60836/00A patent/AU6083600A/en not_active Abandoned
- 2000-07-10 EP EP00947182A patent/EP1236206B1/en not_active Expired - Lifetime
- 2000-07-10 JP JP2001543738A patent/JP4707295B2/en not_active Expired - Fee Related
- 2000-07-10 AT AT00947182T patent/ATE339765T1/en not_active IP Right Cessation
- 2000-07-10 DE DE60030761T patent/DE60030761T2/en not_active Expired - Lifetime
-
2003
- 2003-02-19 HK HK03101281A patent/HK1049228A1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE60030761T2 (en) | 2007-09-20 |
AU6083600A (en) | 2001-06-18 |
US6198655B1 (en) | 2001-03-06 |
EP1236206B1 (en) | 2006-09-13 |
HK1049228A1 (en) | 2003-05-02 |
EP1236206A4 (en) | 2004-05-19 |
ATE339765T1 (en) | 2006-10-15 |
CA2393791C (en) | 2010-06-08 |
DE60030761D1 (en) | 2006-10-26 |
JP4707295B2 (en) | 2011-06-22 |
WO2001043138A1 (en) | 2001-06-14 |
EP1236206A1 (en) | 2002-09-04 |
JP2003516602A (en) | 2003-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2393791A1 (en) | Electrically addressable volatile and non-volatile molecular-based switching devices | |
US5315131A (en) | Electrically reprogrammable nonvolatile memory device | |
CN100367528C (en) | Switch element having memory effect | |
Bandyopadhyay et al. | Multilevel conductivity and conductance switching in supramolecular structures of an organic molecule | |
US7183141B1 (en) | Reversible field-programmable electric interconnects | |
JP2004522189A (en) | Electrochemical pixel device | |
CN103858231A (en) | Memory cells and memory cell arrays | |
KR100910276B1 (en) | Bistable molecular mechanical devices with a band gap change activated by an electric field for electronic switching, gating, and memory applications | |
JP2004529491A (en) | Electrochemical equipment | |
JP2004526195A (en) | Electrochromic device | |
US6852586B1 (en) | Self assembly of conducting polymer for formation of polymer memory cell | |
KR20030092132A (en) | Floating gate memory device using composite molecular material | |
EP1331671A4 (en) | Point contact array, not circuit, and electronic circuit comprising the same | |
US6707063B2 (en) | Passivation layer for molecular electronic device fabrication | |
US7964443B2 (en) | Method of forming a crossed wire molecular device including a self-assembled molecular layer | |
KR101206605B1 (en) | Organic memory devices and preparation method thereof | |
US20080277644A1 (en) | Switch array circuit and system using programmable via structures with phase change materials | |
KR20030061850A (en) | Stabilization of configurable molecular mechanical devices | |
EP1569286A3 (en) | Bistable molecular switches and associated methods | |
KR101224768B1 (en) | Organic memory device and preparation method thereof | |
KR20090090313A (en) | Memory device and method for fabricating a memory device | |
US20020149809A1 (en) | Proton or ion movement assisted molecular devices | |
CN108511443A (en) | Address wire contains the compact three-dimensional storage of semiconductor portions | |
JPH08221006A (en) | Display device utilizing electrochromism phenomenon and its production | |
JPS6319850A (en) | Static type memory element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |
Effective date: 20180710 |