CA2393009A1 - Scalable led with improved current spreading structures - Google Patents
Scalable led with improved current spreading structures Download PDFInfo
- Publication number
- CA2393009A1 CA2393009A1 CA002393009A CA2393009A CA2393009A1 CA 2393009 A1 CA2393009 A1 CA 2393009A1 CA 002393009 A CA002393009 A CA 002393009A CA 2393009 A CA2393009 A CA 2393009A CA 2393009 A1 CA2393009 A1 CA 2393009A1
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- Prior art keywords
- conductive
- contact
- led
- layer
- fingers
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Abstract
An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer (14), improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintaining the enhanced current injection. The invention is particularly applicable to LEDs having insulating substrates (12) but can also reduce the series resistance of LEDs having conductive substrates. The improved structures comprise conductive fingers (20a, 20b, 22) that form cooperating conductive paths that ensure that current spreads from the contacts (19, 21), into the fingers (20a, 20b, 22) and uniformly spreads through the oppositely doped layers (15, 16). The current then spreads to the active layer (14) to uniformly inject electrons and holes throughout the active layer (14), which recombine to emit light.
Claims (31)
1. A scalable light emitting diode (LED) with enhanced current spreading structures, comprising:
an LED core (13) having:
an epitaxially grown p-type layer (16);
an epitaxially grown n-type layer (15); and an epitaxially grown active layer (14) between said p-type and n-type layers (16,18);
an first spreader layer (11) adjacent to said LED
core (13);
at least one groove (23) through said LED cora (13), to said first spreader layer (11);
a first contact (21) having at least one first conductive finger (22) on said first spreader layer (11) within said at least one groove (23) such that current flows from said first contact (21), into said at least one first conductive finger (22), into said first spreader layer (11), and into said LED core (13);
a second contact (19) having at least one second conductive finger (20a,20b) on said LED core (13) opposite said first spreader layer (11) such that current flows from said second contact (19) into said at least one second finger (20,20b) and into said LED core (13).
an LED core (13) having:
an epitaxially grown p-type layer (16);
an epitaxially grown n-type layer (15); and an epitaxially grown active layer (14) between said p-type and n-type layers (16,18);
an first spreader layer (11) adjacent to said LED
core (13);
at least one groove (23) through said LED cora (13), to said first spreader layer (11);
a first contact (21) having at least one first conductive finger (22) on said first spreader layer (11) within said at least one groove (23) such that current flows from said first contact (21), into said at least one first conductive finger (22), into said first spreader layer (11), and into said LED core (13);
a second contact (19) having at least one second conductive finger (20a,20b) on said LED core (13) opposite said first spreader layer (11) such that current flows from said second contact (19) into said at least one second finger (20,20b) and into said LED core (13).
2. The LED of claim 1, wherein said first spreader layer (11) is an n-type epitaxial layer.
3 The LED of claim 1, wherein said n-type layer (15) is adjacent to said first spreader layer (11).
4. The LED of claim 1, wherein said second contact (19) and said at least one second conductive finger (20a,20b) are on said p-type layer.
5. The LED of claim 1, wherein said at least one second conductive finger (20a,20b) and said at least one first conductive finger (22) are generally parallel for a portion of their lengths.
6. The LED of claim 1, wherein said at least one second conductive finger (20a,20b) and said at least one first conductive finger (22) are approximately uniform distance from one another for a portion of their lengths, to provide nearly uniform current injection into said LED
core (13).
core (13).
7. The LED of claim 1, further comprising a substrate (12) adjacent to said first spreader layer (11), opposite said LED core (13).
8. The LED of claim 7, wherein said substrate (12) is electrically conductive.
9. The LED of claim 1, further comprising a second spreader layer (16) on said LED core (13) opposite said first spreader layer (11), said second contact (19) and said at least one conductive finger (20a,20b) disposed on said second spreader layer (16) such that current applied to said contact (19) spreads to said at least one conductive finger (20a,20b) and throughout said second spreader layer (16), and into said LED core (13).
10. The LED of claim 9, wherein said second spreader layer (16) is a transparent conductor.
11. The LED of claim 9, including one said first conductive finger (22), wherein said second contact (19) and at least one conductive finger (20a,20b) form a generally U-shaped conductive path, said first contact (21) and said first conductive finger (22) forming an elongated conductive path within said U-shaped path.
12. The LED of claim 9, including one said second conductive finger (27), wherein said first contact (44) and at least one conductive finger (45a,45b) form a generally U-shaped conductive path, said second contact (46) and said second conductive finger (47) forming an elongated conductive path within said U-shaped path.
13. The LED of claim 9, including a plurality of said first and second conductive fingers (76, 75), said second contact (73) near one edge of said LED and said first contact (72) near the opposite edge, said second conductive fingers (75) forming a plurality of conductive paths from said second contact (73) toward said opposite edge, said first fingers (76) forming a plurality of conductive paths from said first contact (72) toward said second contact (73) interdigitated between said second fingers (75).
14. The LED of claim 9, wherein said second contact (111) is located near the center of said current spreading layer (112) and said second conductive fingers (113,114) form conductive paths from said second contact (111) toward the edge of said LED, and said first conductive fingers (117) form conductive paths from said first contact (115), toward said second contact (111) interdigitated between said second conductive fingers (113,114).
15. The LED of claim 9, wherein said second contact (91) is located in the center of said current spreading layer (92) and further comprises two conductive branches (93) forming conductive paths in opposite respective directions from said contact (91) down a centerline of said LED, said second conductive fingers (94) forming conductive paths. generally orthogonal to said branches (93), said first fingers (97) forming conductive paths from said first contact (95) and from the edge of said LED, toward said branches (93) interdigitated between said second fingers (97).
16. The LED of claim 9, including a plurality of said first and second conductive fingers (84,87), wherein said second fingers (84) form generally parallel zig-zag conductive paths from said second contact (81), and said first fingers (87) form generally parallel zig-zag conductive paths from said first contact (85) interdigitated between said second zig-zag fingers (84).
17. A scalable light emitting diode (LED) using flip-chip mounting and having enhanced current spreading structures, comprising:
an LED core (130) having:
an epitaxially grown p-type layer;
an epitaxially grown n-type layer; and an epitaxially grown active layer between said p-type and n-type layers;
an first spreader layer (126) adjacent to said LED
core (130);
at least one groove through said LED core, to said first spreader layer (126);
an first contact (129) having at least one first conductive finger (131) on said first spreader layer (126) within said at least one groove such that current flows from said first contact (129), into said at least one first conductive finger (131), into said first spreader layer (126) and into said LED core (130);
a second spreader layer (124) adjacent to said LED
core (130), opposite said first spreader (126);
a conductive layer having two separate sections (127,128), a first section (127) of said conductive layer bonded to said second spreader;
a submount (122) adjacent to said first section (127) of said conductive layer, opposite said second spreader (124), the second section (128) of said conductive layer also adjacent to said submount (122), said LED further comprising a conductive material (125) between said second section (128) and said contact (129), a bias applied to said first and second sections (127,128) of conductive layer causing said LED core (130) to emit light.
an LED core (130) having:
an epitaxially grown p-type layer;
an epitaxially grown n-type layer; and an epitaxially grown active layer between said p-type and n-type layers;
an first spreader layer (126) adjacent to said LED
core (130);
at least one groove through said LED core, to said first spreader layer (126);
an first contact (129) having at least one first conductive finger (131) on said first spreader layer (126) within said at least one groove such that current flows from said first contact (129), into said at least one first conductive finger (131), into said first spreader layer (126) and into said LED core (130);
a second spreader layer (124) adjacent to said LED
core (130), opposite said first spreader (126);
a conductive layer having two separate sections (127,128), a first section (127) of said conductive layer bonded to said second spreader;
a submount (122) adjacent to said first section (127) of said conductive layer, opposite said second spreader (124), the second section (128) of said conductive layer also adjacent to said submount (122), said LED further comprising a conductive material (125) between said second section (128) and said contact (129), a bias applied to said first and second sections (127,128) of conductive layer causing said LED core (130) to emit light.
18. The LED of claim 17, further comprising a substrate (123) adjacent to said first spreader layer (126), opposite said LED core (130).
19. The LED of claim 18, wherein said substrate (123) is made of a transparent or semi-transparent and is the primary emitting surface for she light generated by said LED core (130).
20. The LED of claim 17, wherein said second spreader (124) layer is made of a semi-transparent material and further comprises a reflector to reflect light from the LED core (130) toward said substrate (123).
21. The LED of claim 17, further comprising a bonding media (121) between said conductive layer's first section and said second spreader, and wherein said conductive material (125) comprising a bonding media.
22. A semiconductor LED with current spreading structures, comprising:
two or more adjacent layers (11,14,15,16) doped with impurities;
at least one groove (23) etched through one or more of said layers (11, 14, 15, 16), exposing a surface on or within one of said layers (11,14,15,16);
a first contact (21) having at least one first conductive finger (22) on said exposed surface within said at least one groove (23), such that current flows from said contact (21) into said at least one first finger (22), and into said layer (11,14,15,16) with said exposed surface; and a second contact (19) having at least one second conductive finger (20a,20b) on the surface of said adjacent layers (11,14,15,16) such that current flows from said second contact (19), into said at least one conductive second finger (20a,20b) and into said adjacent layers (11,14,15,16).
two or more adjacent layers (11,14,15,16) doped with impurities;
at least one groove (23) etched through one or more of said layers (11, 14, 15, 16), exposing a surface on or within one of said layers (11,14,15,16);
a first contact (21) having at least one first conductive finger (22) on said exposed surface within said at least one groove (23), such that current flows from said contact (21) into said at least one first finger (22), and into said layer (11,14,15,16) with said exposed surface; and a second contact (19) having at least one second conductive finger (20a,20b) on the surface of said adjacent layers (11,14,15,16) such that current flows from said second contact (19), into said at least one conductive second finger (20a,20b) and into said adjacent layers (11,14,15,16).
23. The semiconductor LED of claim 22, wherein. said at least one second conductive finger (20a,20b) and adjacent said at least one first conductive finger (22) are generally parallel for a portion of their lengths.
24. The semiconductor LED of claim 22, wherein said at least one second conductive finger (20a,20b) and adjacent said at least one first conductive finger (22) are approximately uniform distance from one another to provide nearly uniform current injection into said two or more adjacent layers doped with impurities.
25. The semiconductor LED of claim 22, including one said first conductive finger (22), wherein said second contact and at least one conductive finger (20a,20b) form a generally U-shaped conductive path, said first contact (21) and said first conductive finger (22) forming an elongated conductive path within said U-shaped path.
26. The semiconductor LED of claim 22, including one said first conductive finger (47), wherein said first contact (44) and at least one conductive finger (45a,45b)) form a generally U-shaped conductive path, said second contact (44) and said second conductive finger (47) forming an elongated conductive path within said U-shaped path.
27. The semiconductor LED of claim 22, including a plurality of said first and second conductive fingers (76,75), said second contact (73) near one edge of said adjacent layers (11,14,15,16) and said first contact (72) near the opposite edge, said second conductive fingers (75) forming a plurality of conductive paths from said second contact (73) toward said opposite edge, said first fingers (76) forming a plurality of conductive paths from said first contact (72) toward said second contact (73) interdigitated between said second fingers (75).
28. The semiconductor LED of claim 22, wherein said second contact (111) is located near the center of the surface of said adjacent layers (11,14,15,16) and said second conductive fingers (113,114) form conductive paths from said second contact (111) toward the edge of said surface of said adjacent layers (11,14,15,16), and said first conductive fingers (117) form conductive paths from said first contact (115), toward said second contact (111) interdigitated between said second conductive fingers (113,114).
29. The semiconductor LED of claim 22, wherein said second contact (91) is located in the center of the surface of said adjacent layers (11,14,15,16) and further comprises two conductive branches (94) forming conductive paths in opposite respective directions from said contact (91) down a centerline of said surface, said second conductive fingers (94) forming conductive paths generally orthogonal to said branches (93), said first fingers (97) forming conductive paths from said first contact (95) and from the edge of said surface, toward said branches (93) interdigitated between said second fingers (97).
30. The semiconductor LED of claim 22, including a plurality of said first and second conductive fingers (84,87), wherein said second fingers (84) form generally parallel zig-zag conductive paths from said second contact (81), and said first fingers (87) form generally parallel zig-zag conductive paths from said first contact (85) interdigitated between said second zig-zag fingers (84).
31. A scalable light emitting diode (LED) with enhanced current spreading structures, comprising:
an epitaxially grown p-type layer (16);
an epitaxially grown n-type layer (15);
an epitaxially grown active layer (14) between said p-type and n-type layers (15,16);
a first contact (21) having at least one first conductive finger (22);
at least one groove (23) etched through said p-type and active layers (16,14) to said n-type layer (15) such that said first contact (21) and at least one finger fingers (22 ) are on said n-type layer (15) in the etched areas;
a second contact (19) and at least one second conductive finger (20a,20b) on said p-type layer (16), wherein said at least one first and second conductive fingers (22,20a,20b) are generally parallel for at least a portion of their lengths.
an epitaxially grown p-type layer (16);
an epitaxially grown n-type layer (15);
an epitaxially grown active layer (14) between said p-type and n-type layers (15,16);
a first contact (21) having at least one first conductive finger (22);
at least one groove (23) etched through said p-type and active layers (16,14) to said n-type layer (15) such that said first contact (21) and at least one finger fingers (22 ) are on said n-type layer (15) in the etched areas;
a second contact (19) and at least one second conductive finger (20a,20b) on said p-type layer (16), wherein said at least one first and second conductive fingers (22,20a,20b) are generally parallel for at least a portion of their lengths.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16833899P | 1999-12-01 | 1999-12-01 | |
US60/168,338 | 1999-12-01 | ||
US09/721,352 US6614056B1 (en) | 1999-12-01 | 2000-11-21 | Scalable led with improved current spreading structures |
US09/721,352 | 2000-11-21 | ||
PCT/US2000/032167 WO2001041223A1 (en) | 1999-12-01 | 2000-11-22 | Scalable led with improved current spreading structures |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2393009A1 true CA2393009A1 (en) | 2001-06-07 |
CA2393009C CA2393009C (en) | 2011-10-18 |
Family
ID=26864014
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA2393009A Expired - Lifetime CA2393009C (en) | 1999-12-01 | 2000-11-22 | Scalable led with improved current spreading structures |
Country Status (11)
Country | Link |
---|---|
US (2) | US6614056B1 (en) |
EP (3) | EP2337096B1 (en) |
JP (3) | JP2003524295A (en) |
KR (1) | KR100707218B1 (en) |
CN (1) | CN1226791C (en) |
AT (1) | ATE488869T1 (en) |
AU (1) | AU1662301A (en) |
CA (1) | CA2393009C (en) |
DE (1) | DE60045254D1 (en) |
HK (1) | HK1048708A1 (en) |
WO (1) | WO2001041223A1 (en) |
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CN1226791C (en) | 2005-11-09 |
DE60045254D1 (en) | 2010-12-30 |
ATE488869T1 (en) | 2010-12-15 |
CN1433578A (en) | 2003-07-30 |
EP2337096A3 (en) | 2014-09-24 |
JP2003524295A (en) | 2003-08-12 |
WO2001041223A1 (en) | 2001-06-07 |
EP2337095A2 (en) | 2011-06-22 |
AU1662301A (en) | 2001-06-12 |
EP2337096A2 (en) | 2011-06-22 |
JP2015043473A (en) | 2015-03-05 |
EP1234343B1 (en) | 2010-11-17 |
US20040084684A1 (en) | 2004-05-06 |
CA2393009C (en) | 2011-10-18 |
HK1048708A1 (en) | 2003-04-11 |
KR100707218B1 (en) | 2007-04-17 |
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