EP0942459B1
(en)
*
|
1997-04-11 |
2012-03-21 |
Nichia Corporation |
Method of growing nitride semiconductors
|
JP3283802B2
(en)
*
|
1997-09-29 |
2002-05-20 |
日本電気株式会社 |
Semiconductor layer using selective growth method and method for growing the same, nitride semiconductor layer using selective growth method and method for growing the same, nitride semiconductor light emitting device and method for manufacturing the same
|
US6265289B1
(en)
*
|
1998-06-10 |
2001-07-24 |
North Carolina State University |
Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
|
JP3201475B2
(en)
*
|
1998-09-14 |
2001-08-20 |
松下電器産業株式会社 |
Semiconductor device and method of manufacturing the same
|
JP3517876B2
(en)
*
|
1998-10-14 |
2004-04-12 |
セイコーエプソン株式会社 |
Ferroelectric thin film element manufacturing method, ink jet recording head, and ink jet printer
|
US6177688B1
(en)
*
|
1998-11-24 |
2001-01-23 |
North Carolina State University |
Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
|
US6372041B1
(en)
*
|
1999-01-08 |
2002-04-16 |
Gan Semiconductor Inc. |
Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis
|
US6844574B1
(en)
*
|
1999-03-12 |
2005-01-18 |
Sumitomo Chemical Company, Limited |
III-V compound semiconductor
|
DE19935771A1
(en)
*
|
1999-07-23 |
2001-02-01 |
Schering Ag |
New vitamin D derivatives with cyclic substructures in the side chains, processes and intermediates for their manufacture and their use in the manufacture of pharmaceuticals
|
US6495385B1
(en)
*
|
1999-08-30 |
2002-12-17 |
The Regents Of The University Of California |
Hetero-integration of dissimilar semiconductor materials
|
US6812053B1
(en)
*
|
1999-10-14 |
2004-11-02 |
Cree, Inc. |
Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
|
US6521514B1
(en)
*
|
1999-11-17 |
2003-02-18 |
North Carolina State University |
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
|
JP2001168028A
(en)
*
|
1999-12-03 |
2001-06-22 |
Sony Corp |
Method of manufacturing nitride-based iii-v compound crystal, nitride-based iii-v compound crystalline substrate, nitride-based iii-v compound crystalline film, and method of manufacturing device
|
JP2001176805A
(en)
*
|
1999-12-16 |
2001-06-29 |
Sony Corp |
Method for manufacturing crystal of nitride-based iii-v- group compound. nitride-based iii-v-group crystal substrate, nitride-based iii-v-group compound crystal film, and method for manufacturing device
|
US6403451B1
(en)
*
|
2000-02-09 |
2002-06-11 |
Noerh Carolina State University |
Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
|
US6836498B2
(en)
*
|
2000-06-05 |
2004-12-28 |
Sony Corporation |
Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof
|
EP1307903A1
(en)
|
2000-08-04 |
2003-05-07 |
The Regents Of The University Of California |
Method of controlling stress in gallium nitride films deposited on substrates
|
US7619261B2
(en)
*
|
2000-08-07 |
2009-11-17 |
Toyoda Gosei Co., Ltd. |
Method for manufacturing gallium nitride compound semiconductor
|
US6673149B1
(en)
*
|
2000-09-06 |
2004-01-06 |
Matsushita Electric Industrial Co., Ltd |
Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate
|
JP2002222771A
(en)
*
|
2000-11-21 |
2002-08-09 |
Ngk Insulators Ltd |
Method for manufacturing group iii nitride film, ground film for manufacturing group iii nitride film and method for manufacturing the same
|
WO2002044444A1
(en)
|
2000-11-30 |
2002-06-06 |
Kyma Technologies, Inc. |
Method and apparatus for producing miiin columns and miiin materials grown thereon
|
US6787010B2
(en)
|
2000-11-30 |
2004-09-07 |
North Carolina State University |
Non-thermionic sputter material transport device, methods of use, and materials produced thereby
|
US6649287B2
(en)
*
|
2000-12-14 |
2003-11-18 |
Nitronex Corporation |
Gallium nitride materials and methods
|
US6791119B2
(en)
*
|
2001-02-01 |
2004-09-14 |
Cree, Inc. |
Light emitting diodes including modifications for light extraction
|
US6794684B2
(en)
|
2001-02-01 |
2004-09-21 |
Cree, Inc. |
Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
|
WO2002064864A1
(en)
*
|
2001-02-14 |
2002-08-22 |
Toyoda Gosei Co., Ltd. |
Production method for semiconductor crystal and semiconductor luminous element
|
US6956250B2
(en)
*
|
2001-02-23 |
2005-10-18 |
Nitronex Corporation |
Gallium nitride materials including thermally conductive regions
|
US6611002B2
(en)
|
2001-02-23 |
2003-08-26 |
Nitronex Corporation |
Gallium nitride material devices and methods including backside vias
|
US7233028B2
(en)
*
|
2001-02-23 |
2007-06-19 |
Nitronex Corporation |
Gallium nitride material devices and methods of forming the same
|
JP2002252422A
(en)
*
|
2001-02-27 |
2002-09-06 |
Sanyo Electric Co Ltd |
Nitride-base semiconductor device and method of forming nitride-base semiconductor
|
JP2002280314A
(en)
*
|
2001-03-22 |
2002-09-27 |
Toyoda Gosei Co Ltd |
Manufacturing method of iii nitride compound semiconductor group, and the iii nitride compound semiconductor element based thereon
|
EP2400046A1
(en)
*
|
2001-03-30 |
2011-12-28 |
Technologies and Devices International Inc. |
Method and apparatus for growing submicron group III nitride structures utilizing HVPE techniques
|
KR100425343B1
(en)
*
|
2001-04-17 |
2004-03-30 |
삼성전기주식회사 |
Method for manufacturing semiconductor substrate
|
US6784074B2
(en)
|
2001-05-09 |
2004-08-31 |
Nsc-Nanosemiconductor Gmbh |
Defect-free semiconductor templates for epitaxial growth and method of making same
|
US6653166B2
(en)
*
|
2001-05-09 |
2003-11-25 |
Nsc-Nanosemiconductor Gmbh |
Semiconductor device and method of making same
|
US6706114B2
(en)
|
2001-05-21 |
2004-03-16 |
Cree, Inc. |
Methods of fabricating silicon carbide crystals
|
JP3946969B2
(en)
*
|
2001-05-31 |
2007-07-18 |
日本碍子株式会社 |
Field effect transistor and heterojunction bipolar transistor
|
US20040169192A1
(en)
*
|
2001-06-04 |
2004-09-02 |
Hisaki Kato |
Method for producing group III nitride compounds semiconductor
|
US6936357B2
(en)
*
|
2001-07-06 |
2005-08-30 |
Technologies And Devices International, Inc. |
Bulk GaN and ALGaN single crystals
|
US20070032046A1
(en)
*
|
2001-07-06 |
2007-02-08 |
Dmitriev Vladimir A |
Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
|
US20030205193A1
(en)
*
|
2001-07-06 |
2003-11-06 |
Melnik Yuri V. |
Method for achieving low defect density aigan single crystal boules
|
US6616757B1
(en)
|
2001-07-06 |
2003-09-09 |
Technologies And Devices International, Inc. |
Method for achieving low defect density GaN single crystal boules
|
US20060011135A1
(en)
*
|
2001-07-06 |
2006-01-19 |
Dmitriev Vladimir A |
HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
|
US6613143B1
(en)
*
|
2001-07-06 |
2003-09-02 |
Technologies And Devices International, Inc. |
Method for fabricating bulk GaN single crystals
|
US7501023B2
(en)
*
|
2001-07-06 |
2009-03-10 |
Technologies And Devices, International, Inc. |
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
|
US6740906B2
(en)
*
|
2001-07-23 |
2004-05-25 |
Cree, Inc. |
Light emitting diodes including modifications for submount bonding
|
US7211833B2
(en)
*
|
2001-07-23 |
2007-05-01 |
Cree, Inc. |
Light emitting diodes including barrier layers/sublayers
|
US6554673B2
(en)
|
2001-07-31 |
2003-04-29 |
The United States Of America As Represented By The Secretary Of The Navy |
Method of making electron emitters
|
US20030090103A1
(en)
*
|
2001-11-09 |
2003-05-15 |
Thomas Becker |
Direct mailing device
|
US6635503B2
(en)
|
2002-01-28 |
2003-10-21 |
Cree, Inc. |
Cluster packaging of light emitting diodes
|
WO2003102508A1
(en)
|
2002-05-31 |
2003-12-11 |
Analytica Of Branford, Inc. |
Mass spectrometry with segmented rf multiple ion guides in various pressure regions
|
AU2003254349A1
(en)
*
|
2002-07-11 |
2004-02-02 |
University College Cork - National University Of Ireland, Cork |
Defect reduction in semiconductor materials
|
US7399684B2
(en)
*
|
2002-07-11 |
2008-07-15 |
University College Cork - National University Of Ireland, Cork |
Defect reduction in semiconductor materials
|
US10340424B2
(en)
|
2002-08-30 |
2019-07-02 |
GE Lighting Solutions, LLC |
Light emitting diode component
|
JP2006500767A
(en)
*
|
2002-09-19 |
2006-01-05 |
クリー インコーポレイテッド |
Light emitting diode and manufacturing method thereof
|
DE10256428A1
(en)
*
|
2002-12-02 |
2004-06-17 |
Technische Universität Carolo-Wilhelmina Zu Braunschweig |
Structuring surface of electrically conducting semiconductor material comprises applying metal mask on surface of semiconductor material, anodically oxidizing regions not protected, and further processing
|
US9279193B2
(en)
*
|
2002-12-27 |
2016-03-08 |
Momentive Performance Materials Inc. |
Method of making a gallium nitride crystalline composition having a low dislocation density
|
US20060276043A1
(en)
*
|
2003-03-21 |
2006-12-07 |
Johnson Mark A L |
Method and systems for single- or multi-period edge definition lithography
|
US6936851B2
(en)
*
|
2003-03-21 |
2005-08-30 |
Tien Yang Wang |
Semiconductor light-emitting device and method for manufacturing the same
|
US20040215561A1
(en)
*
|
2003-04-25 |
2004-10-28 |
Rossides Michael T. |
Method and system for paying small commissions to a group
|
US7087936B2
(en)
*
|
2003-04-30 |
2006-08-08 |
Cree, Inc. |
Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
|
US7531380B2
(en)
|
2003-04-30 |
2009-05-12 |
Cree, Inc. |
Methods of forming light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof
|
US7714345B2
(en)
*
|
2003-04-30 |
2010-05-11 |
Cree, Inc. |
Light-emitting devices having coplanar electrical contacts adjacent to a substrate surface opposite an active region and methods of forming the same
|
US7135720B2
(en)
*
|
2003-08-05 |
2006-11-14 |
Nitronex Corporation |
Gallium nitride material transistors and methods associated with the same
|
US20050104072A1
(en)
|
2003-08-14 |
2005-05-19 |
Slater David B.Jr. |
Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
|
US7029935B2
(en)
*
|
2003-09-09 |
2006-04-18 |
Cree, Inc. |
Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
|
US7183587B2
(en)
*
|
2003-09-09 |
2007-02-27 |
Cree, Inc. |
Solid metal block mounting substrates for semiconductor light emitting devices
|
US6960526B1
(en)
|
2003-10-10 |
2005-11-01 |
The United States Of America As Represented By The Secretary Of The Army |
Method of fabricating sub-100 nanometer field emitter tips comprising group III-nitride semiconductors
|
US20050145851A1
(en)
*
|
2003-12-17 |
2005-07-07 |
Nitronex Corporation |
Gallium nitride material structures including isolation regions and methods
|
US7071498B2
(en)
*
|
2003-12-17 |
2006-07-04 |
Nitronex Corporation |
Gallium nitride material devices including an electrode-defining layer and methods of forming the same
|
JP4540347B2
(en)
*
|
2004-01-05 |
2010-09-08 |
シャープ株式会社 |
Nitride semiconductor laser device and manufacturing method thereof
|
US7198970B2
(en)
*
|
2004-01-23 |
2007-04-03 |
The United States Of America As Represented By The Secretary Of The Navy |
Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
|
CN1309013C
(en)
*
|
2004-03-05 |
2007-04-04 |
长春理工大学 |
Method of growing low dislocation gallium nitride on silicon substrate
|
US7419912B2
(en)
*
|
2004-04-01 |
2008-09-02 |
Cree, Inc. |
Laser patterning of light emitting devices
|
WO2005108327A1
(en)
|
2004-05-06 |
2005-11-17 |
Asahi Glass Company, Limited |
Method for producing multilayer dielectric body
|
US7157297B2
(en)
*
|
2004-05-10 |
2007-01-02 |
Sharp Kabushiki Kaisha |
Method for fabrication of semiconductor device
|
US7084441B2
(en)
|
2004-05-20 |
2006-08-01 |
Cree, Inc. |
Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
|
JP4651312B2
(en)
*
|
2004-06-10 |
2011-03-16 |
シャープ株式会社 |
Manufacturing method of semiconductor device
|
US7339205B2
(en)
*
|
2004-06-28 |
2008-03-04 |
Nitronex Corporation |
Gallium nitride materials and methods associated with the same
|
US7361946B2
(en)
*
|
2004-06-28 |
2008-04-22 |
Nitronex Corporation |
Semiconductor device-based sensors
|
US7795623B2
(en)
|
2004-06-30 |
2010-09-14 |
Cree, Inc. |
Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
|
US20060002442A1
(en)
*
|
2004-06-30 |
2006-01-05 |
Kevin Haberern |
Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
|
US7687827B2
(en)
*
|
2004-07-07 |
2010-03-30 |
Nitronex Corporation |
III-nitride materials including low dislocation densities and methods associated with the same
|
US20060017064A1
(en)
*
|
2004-07-26 |
2006-01-26 |
Saxler Adam W |
Nitride-based transistors having laterally grown active region and methods of fabricating same
|
US7557380B2
(en)
|
2004-07-27 |
2009-07-07 |
Cree, Inc. |
Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
|
US20060097385A1
(en)
*
|
2004-10-25 |
2006-05-11 |
Negley Gerald H |
Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
|
EP1831919A2
(en)
*
|
2004-10-28 |
2007-09-12 |
Nitronex Corporation |
Gallium nitride/silicon based monolithic microwave integrated circuit
|
US7456443B2
(en)
*
|
2004-11-23 |
2008-11-25 |
Cree, Inc. |
Transistors having buried n-type and p-type regions beneath the source region
|
US7709859B2
(en)
*
|
2004-11-23 |
2010-05-04 |
Cree, Inc. |
Cap layers including aluminum nitride for nitride-based transistors
|
KR100728533B1
(en)
*
|
2004-11-23 |
2007-06-15 |
삼성코닝 주식회사 |
Single crystalline gallium nitride thick film and preparation thereof
|
US7247889B2
(en)
|
2004-12-03 |
2007-07-24 |
Nitronex Corporation |
III-nitride material structures including silicon substrates
|
US7355215B2
(en)
*
|
2004-12-06 |
2008-04-08 |
Cree, Inc. |
Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies
|
US7161194B2
(en)
*
|
2004-12-06 |
2007-01-09 |
Cree, Inc. |
High power density and/or linearity transistors
|
FI20045482A0
(en)
*
|
2004-12-14 |
2004-12-14 |
Optogan Oy |
A semiconductor substrate having a lower dislocation density, and a process for its preparation
|
US7322732B2
(en)
|
2004-12-23 |
2008-01-29 |
Cree, Inc. |
Light emitting diode arrays for direct backlighting of liquid crystal displays
|
US7304694B2
(en)
*
|
2005-01-12 |
2007-12-04 |
Cree, Inc. |
Solid colloidal dispersions for backlighting of liquid crystal displays
|
US7335920B2
(en)
*
|
2005-01-24 |
2008-02-26 |
Cree, Inc. |
LED with current confinement structure and surface roughening
|
US7465967B2
(en)
|
2005-03-15 |
2008-12-16 |
Cree, Inc. |
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
|
US7626217B2
(en)
*
|
2005-04-11 |
2009-12-01 |
Cree, Inc. |
Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
|
US8575651B2
(en)
|
2005-04-11 |
2013-11-05 |
Cree, Inc. |
Devices having thick semi-insulating epitaxial gallium nitride layer
|
CN100463240C
(en)
*
|
2005-04-15 |
2009-02-18 |
晶能光电(江西)有限公司 |
A method for preparing indium-gallium-aluminium-nitrogen film and luminescent device on the silicon substrate
|
US7615774B2
(en)
*
|
2005-04-29 |
2009-11-10 |
Cree.Inc. |
Aluminum free group III-nitride based high electron mobility transistors
|
US7544963B2
(en)
*
|
2005-04-29 |
2009-06-09 |
Cree, Inc. |
Binary group III-nitride based high electron mobility transistors
|
US7365374B2
(en)
|
2005-05-03 |
2008-04-29 |
Nitronex Corporation |
Gallium nitride material structures including substrates and methods associated with the same
|
US20060270201A1
(en)
*
|
2005-05-13 |
2006-11-30 |
Chua Soo J |
Nano-air-bridged lateral overgrowth of GaN semiconductor layer
|
US20060267043A1
(en)
*
|
2005-05-27 |
2006-11-30 |
Emerson David T |
Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
|
TW200703463A
(en)
*
|
2005-05-31 |
2007-01-16 |
Univ California |
Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
|
US8168000B2
(en)
*
|
2005-06-15 |
2012-05-01 |
International Rectifier Corporation |
III-nitride semiconductor device fabrication
|
US9331192B2
(en)
*
|
2005-06-29 |
2016-05-03 |
Cree, Inc. |
Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
|
US20070018198A1
(en)
*
|
2005-07-20 |
2007-01-25 |
Brandes George R |
High electron mobility electronic device structures comprising native substrates and methods for making the same
|
JP4913375B2
(en)
|
2005-08-08 |
2012-04-11 |
昭和電工株式会社 |
Manufacturing method of semiconductor device
|
US8946674B2
(en)
*
|
2005-08-31 |
2015-02-03 |
University Of Florida Research Foundation, Inc. |
Group III-nitrides on Si substrates using a nanostructured interlayer
|
KR20080072833A
(en)
*
|
2005-10-04 |
2008-08-07 |
니트로넥스 코오포레이션 |
Gallium nitride material transistors and methods for wideband applications
|
EP1969635B1
(en)
*
|
2005-12-02 |
2017-07-19 |
Infineon Technologies Americas Corp. |
Gallium nitride material devices and associated methods
|
US7566913B2
(en)
|
2005-12-02 |
2009-07-28 |
Nitronex Corporation |
Gallium nitride material devices including conductive regions and methods associated with the same
|
US7897490B2
(en)
|
2005-12-12 |
2011-03-01 |
Kyma Technologies, Inc. |
Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement
|
KR20090009772A
(en)
*
|
2005-12-22 |
2009-01-23 |
크리 엘이디 라이팅 솔루션즈, 인크. |
Lighting device
|
US7592211B2
(en)
|
2006-01-17 |
2009-09-22 |
Cree, Inc. |
Methods of fabricating transistors including supported gate electrodes
|
US7709269B2
(en)
*
|
2006-01-17 |
2010-05-04 |
Cree, Inc. |
Methods of fabricating transistors including dielectrically-supported gate electrodes
|
CN101473453B
(en)
*
|
2006-01-20 |
2014-08-27 |
科锐公司 |
Shifting spectral content in solid state light emitters by spatially separating lumiphor films
|
US8441179B2
(en)
|
2006-01-20 |
2013-05-14 |
Cree, Inc. |
Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
|
GB2436398B
(en)
*
|
2006-03-23 |
2011-08-24 |
Univ Bath |
Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
|
EP2016614A4
(en)
*
|
2006-04-25 |
2014-04-09 |
Univ Singapore |
Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template
|
JP2009538532A
(en)
|
2006-05-23 |
2009-11-05 |
クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド |
Lighting device
|
JP2009538536A
(en)
|
2006-05-26 |
2009-11-05 |
クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド |
Solid state light emitting device and method of manufacturing the same
|
JP5155536B2
(en)
*
|
2006-07-28 |
2013-03-06 |
一般財団法人電力中央研究所 |
Method for improving the quality of SiC crystal and method for manufacturing SiC semiconductor device
|
US20100269819A1
(en)
*
|
2006-08-14 |
2010-10-28 |
Sievers Robert E |
Human Powered Dry Powder Inhaler and Dry Powder Inhaler Compositions
|
US8647435B1
(en)
|
2006-10-11 |
2014-02-11 |
Ostendo Technologies, Inc. |
HVPE apparatus and methods for growth of p-type single crystal group III nitride materials
|
WO2008073414A1
(en)
*
|
2006-12-12 |
2008-06-19 |
The Regents Of The University Of California |
Crystal growth of m-plane and semipolar planes of(ai, in, ga, b)n on various substrates
|
GB0701069D0
(en)
*
|
2007-01-19 |
2007-02-28 |
Univ Bath |
Nanostructure template and production of semiconductors using the template
|
US9391118B2
(en)
*
|
2007-01-22 |
2016-07-12 |
Cree, Inc. |
Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
|
US10586787B2
(en)
|
2007-01-22 |
2020-03-10 |
Cree, Inc. |
Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same
|
US7692198B2
(en)
*
|
2007-02-19 |
2010-04-06 |
Alcatel-Lucent Usa Inc. |
Wide-bandgap semiconductor devices
|
US7825432B2
(en)
|
2007-03-09 |
2010-11-02 |
Cree, Inc. |
Nitride semiconductor structures with interlayer structures
|
US8362503B2
(en)
|
2007-03-09 |
2013-01-29 |
Cree, Inc. |
Thick nitride semiconductor structures with interlayer structures
|
US7745848B1
(en)
|
2007-08-15 |
2010-06-29 |
Nitronex Corporation |
Gallium nitride material devices and thermal designs thereof
|
US8652947B2
(en)
*
|
2007-09-26 |
2014-02-18 |
Wang Nang Wang |
Non-polar III-V nitride semiconductor and growth method
|
CN101468786B
(en)
*
|
2007-12-26 |
2011-05-25 |
中国科学院半导体研究所 |
Manufacturing method of silicon carbide microchannel for microelectron mechanical system
|
US8026581B2
(en)
*
|
2008-02-05 |
2011-09-27 |
International Rectifier Corporation |
Gallium nitride material devices including diamond regions and methods associated with the same
|
US8343824B2
(en)
*
|
2008-04-29 |
2013-01-01 |
International Rectifier Corporation |
Gallium nitride material processing and related device structures
|
JP2009283807A
(en)
*
|
2008-05-26 |
2009-12-03 |
Canon Inc |
Structure including nitride semiconductor layer, composite substrate including nitride semiconductor layer, and method for manufacturing them
|
JP5695041B2
(en)
*
|
2009-07-06 |
2015-04-01 |
ディーエイチ テクノロジーズ デベロップメント プライベート リミテッド |
Method and system for providing higher order components in a substantially quadrupole electric field
|
US9437785B2
(en)
|
2009-08-10 |
2016-09-06 |
Cree, Inc. |
Light emitting diodes including integrated backside reflector and die attach
|
US8593040B2
(en)
|
2009-10-02 |
2013-11-26 |
Ge Lighting Solutions Llc |
LED lamp with surface area enhancing fins
|
US8466611B2
(en)
|
2009-12-14 |
2013-06-18 |
Cree, Inc. |
Lighting device with shaped remote phosphor
|
US8105852B2
(en)
*
|
2010-01-15 |
2012-01-31 |
Koninklijke Philips Electronics N.V. |
Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate
|
WO2012025821A2
(en)
|
2010-08-25 |
2012-03-01 |
Dh Technologies Development Pte. Ltd. |
Methods and systems for providing a substantially quadrupole field with significant hexapole and octapole components
|
US8772817B2
(en)
|
2010-12-22 |
2014-07-08 |
Cree, Inc. |
Electronic device submounts including substrates with thermally conductive vias
|
CN102593037B
(en)
|
2011-01-12 |
2014-03-26 |
中国科学院微电子研究所 |
Semiconductor structure and making method thereof
|
US8906727B2
(en)
*
|
2011-06-16 |
2014-12-09 |
Varian Semiconductor Equipment Associates, Inc. |
Heteroepitaxial growth using ion implantation
|
US20130023129A1
(en)
|
2011-07-20 |
2013-01-24 |
Asm America, Inc. |
Pressure transmitter for a semiconductor processing environment
|
US9064808B2
(en)
|
2011-07-25 |
2015-06-23 |
Synopsys, Inc. |
Integrated circuit devices having features with reduced edge curvature and methods for manufacturing the same
|
US8609550B2
(en)
|
2011-09-08 |
2013-12-17 |
Synopsys, Inc. |
Methods for manufacturing integrated circuit devices having features with reduced edge curvature
|
WO2013158210A2
(en)
*
|
2012-02-17 |
2013-10-24 |
Yale University |
Heterogeneous material integration through guided lateral growth
|
US9500355B2
(en)
|
2012-05-04 |
2016-11-22 |
GE Lighting Solutions, LLC |
Lamp with light emitting elements surrounding active cooling device
|
US20160376700A1
(en)
|
2013-02-01 |
2016-12-29 |
Asm Ip Holding B.V. |
System for treatment of deposition reactor
|
JP5928366B2
(en)
*
|
2013-02-13 |
2016-06-01 |
豊田合成株式会社 |
Method for producing group III nitride semiconductor
|
WO2014144698A2
(en)
|
2013-03-15 |
2014-09-18 |
Yale University |
Large-area, laterally-grown epitaxial semiconductor layers
|
US9330908B2
(en)
*
|
2013-06-25 |
2016-05-03 |
Globalfoundries Inc. |
Semiconductor structure with aspect ratio trapping capabilities
|
KR102216417B1
(en)
|
2013-06-28 |
2021-02-17 |
인텔 코포레이션 |
Selective epitaxially grown iii-v materials based devices
|
US9574135B2
(en)
*
|
2013-08-22 |
2017-02-21 |
Nanoco Technologies Ltd. |
Gas phase enhancement of emission color quality in solid state LEDs
|
CN103700698B
(en)
*
|
2013-12-30 |
2016-06-15 |
北京京东方光电科技有限公司 |
The preparation method of a kind of thin film transistor, thin film transistor and display panel
|
SG11201606451QA
(en)
|
2014-03-28 |
2016-09-29 |
Intel Corp |
Selective epitaxially grown iii-v materials based devices
|
WO2015160903A1
(en)
|
2014-04-16 |
2015-10-22 |
Yale University |
Nitrogen-polar semipolar gan layers and devices on sapphire substrates
|
US9978845B2
(en)
|
2014-04-16 |
2018-05-22 |
Yale University |
Method of obtaining planar semipolar gallium nitride surfaces
|
JP6183317B2
(en)
*
|
2014-08-08 |
2017-08-23 |
豊田合成株式会社 |
Group III nitride semiconductor manufacturing method and group III nitride semiconductor wafer
|
US10941490B2
(en)
|
2014-10-07 |
2021-03-09 |
Asm Ip Holding B.V. |
Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
|
US10276355B2
(en)
|
2015-03-12 |
2019-04-30 |
Asm Ip Holding B.V. |
Multi-zone reactor, system including the reactor, and method of using the same
|
GB201507665D0
(en)
*
|
2015-05-05 |
2015-06-17 |
Seren Photonics Ltd |
Semiconductor templates and fabrication methods
|
US9806182B2
(en)
|
2015-09-08 |
2017-10-31 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation using elemental diboride diffusion barrier regions
|
US9704705B2
(en)
|
2015-09-08 |
2017-07-11 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation via reaction with active species
|
US9673281B2
(en)
|
2015-09-08 |
2017-06-06 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions
|
US20170069721A1
(en)
|
2015-09-08 |
2017-03-09 |
M/A-Com Technology Solutions Holdings, Inc. |
Parasitic channel mitigation using silicon carbide diffusion barrier regions
|
US10211294B2
(en)
|
2015-09-08 |
2019-02-19 |
Macom Technology Solutions Holdings, Inc. |
III-nitride semiconductor structures comprising low atomic mass species
|
US9627473B2
(en)
|
2015-09-08 |
2017-04-18 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation in III-nitride material semiconductor structures
|
US9773898B2
(en)
|
2015-09-08 |
2017-09-26 |
Macom Technology Solutions Holdings, Inc. |
III-nitride semiconductor structures comprising spatially patterned implanted species
|
US9799520B2
(en)
|
2015-09-08 |
2017-10-24 |
Macom Technology Solutions Holdings, Inc. |
Parasitic channel mitigation via back side implantation
|
WO2017099797A1
(en)
|
2015-12-11 |
2017-06-15 |
Intel Corporation |
Co-planar p-channel and n-channel gallium nitride-based transistors on silicon and techniques for forming same
|
US11139308B2
(en)
|
2015-12-29 |
2021-10-05 |
Asm Ip Holding B.V. |
Atomic layer deposition of III-V compounds to form V-NAND devices
|
US10529554B2
(en)
|
2016-02-19 |
2020-01-07 |
Asm Ip Holding B.V. |
Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
|
US9960127B2
(en)
|
2016-05-18 |
2018-05-01 |
Macom Technology Solutions Holdings, Inc. |
High-power amplifier package
|
US11453943B2
(en)
|
2016-05-25 |
2022-09-27 |
Asm Ip Holding B.V. |
Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
|
US10612137B2
(en)
|
2016-07-08 |
2020-04-07 |
Asm Ip Holdings B.V. |
Organic reactants for atomic layer deposition
|
US9859151B1
(en)
|
2016-07-08 |
2018-01-02 |
Asm Ip Holding B.V. |
Selective film deposition method to form air gaps
|
US9887082B1
(en)
|
2016-07-28 |
2018-02-06 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
US9812320B1
(en)
|
2016-07-28 |
2017-11-07 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
US10134658B2
(en)
|
2016-08-10 |
2018-11-20 |
Macom Technology Solutions Holdings, Inc. |
High power transistors
|
US10896818B2
(en)
|
2016-08-12 |
2021-01-19 |
Yale University |
Stacking fault-free semipolar and nonpolar GaN grown on foreign substrates by eliminating the nitrogen polar facets during the growth
|
US11532757B2
(en)
|
2016-10-27 |
2022-12-20 |
Asm Ip Holding B.V. |
Deposition of charge trapping layers
|
US10714350B2
(en)
|
2016-11-01 |
2020-07-14 |
ASM IP Holdings, B.V. |
Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
|
KR102546317B1
(en)
|
2016-11-15 |
2023-06-21 |
에이에스엠 아이피 홀딩 비.브이. |
Gas supply unit and substrate processing apparatus including the same
|
US11581186B2
(en)
|
2016-12-15 |
2023-02-14 |
Asm Ip Holding B.V. |
Sequential infiltration synthesis apparatus
|
US11447861B2
(en)
|
2016-12-15 |
2022-09-20 |
Asm Ip Holding B.V. |
Sequential infiltration synthesis apparatus and a method of forming a patterned structure
|
US11390950B2
(en)
|
2017-01-10 |
2022-07-19 |
Asm Ip Holding B.V. |
Reactor system and method to reduce residue buildup during a film deposition process
|
US10468261B2
(en)
|
2017-02-15 |
2019-11-05 |
Asm Ip Holding B.V. |
Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
|
US10770286B2
(en)
|
2017-05-08 |
2020-09-08 |
Asm Ip Holdings B.V. |
Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
|
US11306395B2
(en)
|
2017-06-28 |
2022-04-19 |
Asm Ip Holding B.V. |
Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
|
EP3428975A1
(en)
|
2017-07-14 |
2019-01-16 |
AGC Glass Europe |
Light-emitting devices having an antireflective silicon carbide or sapphire substrate and methods of forming the same
|
KR20190009245A
(en)
|
2017-07-18 |
2019-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
Methods for forming a semiconductor device structure and related semiconductor device structures
|
US10590535B2
(en)
|
2017-07-26 |
2020-03-17 |
Asm Ip Holdings B.V. |
Chemical treatment, deposition and/or infiltration apparatus and method for using the same
|
US10770336B2
(en)
|
2017-08-08 |
2020-09-08 |
Asm Ip Holding B.V. |
Substrate lift mechanism and reactor including same
|
US10692741B2
(en)
|
2017-08-08 |
2020-06-23 |
Asm Ip Holdings B.V. |
Radiation shield
|
US11769682B2
(en)
|
2017-08-09 |
2023-09-26 |
Asm Ip Holding B.V. |
Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
|
US11830730B2
(en)
|
2017-08-29 |
2023-11-28 |
Asm Ip Holding B.V. |
Layer forming method and apparatus
|
US11295980B2
(en)
|
2017-08-30 |
2022-04-05 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
|
US10658205B2
(en)
|
2017-09-28 |
2020-05-19 |
Asm Ip Holdings B.V. |
Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
|
WO2019103610A1
(en)
|
2017-11-27 |
2019-05-31 |
Asm Ip Holding B.V. |
Apparatus including a clean mini environment
|
CN111316417B
(en)
|
2017-11-27 |
2023-12-22 |
阿斯莫Ip控股公司 |
Storage device for storing wafer cassettes for use with batch ovens
|
US10872771B2
(en)
|
2018-01-16 |
2020-12-22 |
Asm Ip Holding B. V. |
Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
|
TW202325889A
(en)
|
2018-01-19 |
2023-07-01 |
荷蘭商Asm 智慧財產控股公司 |
Deposition method
|
WO2019142055A2
(en)
|
2018-01-19 |
2019-07-25 |
Asm Ip Holding B.V. |
Method for depositing a gap-fill layer by plasma-assisted deposition
|
US11081345B2
(en)
|
2018-02-06 |
2021-08-03 |
Asm Ip Holding B.V. |
Method of post-deposition treatment for silicon oxide film
|
EP3737779A1
(en)
|
2018-02-14 |
2020-11-18 |
ASM IP Holding B.V. |
A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
|
US10896820B2
(en)
|
2018-02-14 |
2021-01-19 |
Asm Ip Holding B.V. |
Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
|
KR102636427B1
(en)
|
2018-02-20 |
2024-02-13 |
에이에스엠 아이피 홀딩 비.브이. |
Substrate processing method and apparatus
|
US10975470B2
(en)
|
2018-02-23 |
2021-04-13 |
Asm Ip Holding B.V. |
Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
|
US11473195B2
(en)
|
2018-03-01 |
2022-10-18 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus and a method for processing a substrate
|
KR102646467B1
(en)
|
2018-03-27 |
2024-03-11 |
에이에스엠 아이피 홀딩 비.브이. |
Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
|
US11139402B2
(en)
|
2018-05-14 |
2021-10-05 |
Synopsys, Inc. |
Crystal orientation engineering to achieve consistent nanowire shapes
|
KR102596988B1
(en)
|
2018-05-28 |
2023-10-31 |
에이에스엠 아이피 홀딩 비.브이. |
Method of processing a substrate and a device manufactured by the same
|
US11718913B2
(en)
|
2018-06-04 |
2023-08-08 |
Asm Ip Holding B.V. |
Gas distribution system and reactor system including same
|
US10797133B2
(en)
|
2018-06-21 |
2020-10-06 |
Asm Ip Holding B.V. |
Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
|
KR102568797B1
(en)
|
2018-06-21 |
2023-08-21 |
에이에스엠 아이피 홀딩 비.브이. |
Substrate processing system
|
US11499222B2
(en)
|
2018-06-27 |
2022-11-15 |
Asm Ip Holding B.V. |
Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
|
JP2021529254A
(en)
|
2018-06-27 |
2021-10-28 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
Periodic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials
|
US10388513B1
(en)
|
2018-07-03 |
2019-08-20 |
Asm Ip Holding B.V. |
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
|
US10755922B2
(en)
|
2018-07-03 |
2020-08-25 |
Asm Ip Holding B.V. |
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
|
US11038023B2
(en)
|
2018-07-19 |
2021-06-15 |
Macom Technology Solutions Holdings, Inc. |
III-nitride material semiconductor structures on conductive silicon substrates
|
US11430674B2
(en)
|
2018-08-22 |
2022-08-30 |
Asm Ip Holding B.V. |
Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
|
KR20200030162A
(en)
|
2018-09-11 |
2020-03-20 |
에이에스엠 아이피 홀딩 비.브이. |
Method for deposition of a thin film
|
US11024523B2
(en)
|
2018-09-11 |
2021-06-01 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method
|
CN110970344A
(en)
|
2018-10-01 |
2020-04-07 |
Asm Ip控股有限公司 |
Substrate holding apparatus, system including the same, and method of using the same
|
KR102592699B1
(en)
|
2018-10-08 |
2023-10-23 |
에이에스엠 아이피 홀딩 비.브이. |
Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
|
KR102546322B1
(en)
|
2018-10-19 |
2023-06-21 |
에이에스엠 아이피 홀딩 비.브이. |
Substrate processing apparatus and substrate processing method
|
US11087997B2
(en)
|
2018-10-31 |
2021-08-10 |
Asm Ip Holding B.V. |
Substrate processing apparatus for processing substrates
|
KR20200051105A
(en)
|
2018-11-02 |
2020-05-13 |
에이에스엠 아이피 홀딩 비.브이. |
Substrate support unit and substrate processing apparatus including the same
|
US11572620B2
(en)
|
2018-11-06 |
2023-02-07 |
Asm Ip Holding B.V. |
Methods for selectively depositing an amorphous silicon film on a substrate
|
US10818758B2
(en)
|
2018-11-16 |
2020-10-27 |
Asm Ip Holding B.V. |
Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
|
KR102636428B1
(en)
|
2018-12-04 |
2024-02-13 |
에이에스엠 아이피 홀딩 비.브이. |
A method for cleaning a substrate processing apparatus
|
US11158513B2
(en)
|
2018-12-13 |
2021-10-26 |
Asm Ip Holding B.V. |
Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
|
JP2020096183A
(en)
*
|
2018-12-14 |
2020-06-18 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
Method of forming device structure using selective deposition of gallium nitride, and system for the same
|
TWI819180B
(en)
|
2019-01-17 |
2023-10-21 |
荷蘭商Asm 智慧財產控股公司 |
Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
|
JP2020136678A
(en)
|
2019-02-20 |
2020-08-31 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
Method for filing concave part formed inside front surface of base material, and device
|
US11482533B2
(en)
|
2019-02-20 |
2022-10-25 |
Asm Ip Holding B.V. |
Apparatus and methods for plug fill deposition in 3-D NAND applications
|
TW202104632A
(en)
|
2019-02-20 |
2021-02-01 |
荷蘭商Asm Ip私人控股有限公司 |
Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
|
TW202100794A
(en)
|
2019-02-22 |
2021-01-01 |
荷蘭商Asm Ip私人控股有限公司 |
Substrate processing apparatus and method for processing substrate
|
US11742198B2
(en)
|
2019-03-08 |
2023-08-29 |
Asm Ip Holding B.V. |
Structure including SiOCN layer and method of forming same
|
KR20200108242A
(en)
|
2019-03-08 |
2020-09-17 |
에이에스엠 아이피 홀딩 비.브이. |
Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
|
JP2020167398A
(en)
|
2019-03-28 |
2020-10-08 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
Door opener and substrate processing apparatus provided therewith
|
KR20200116855A
(en)
|
2019-04-01 |
2020-10-13 |
에이에스엠 아이피 홀딩 비.브이. |
Method of manufacturing semiconductor device
|
CN117334738A
(en)
*
|
2019-04-12 |
2024-01-02 |
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|
US11447864B2
(en)
|
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2022-09-20 |
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|
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(en)
|
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에이에스엠 아이피 홀딩 비.브이. |
Gas-phase reactor system and method of using same
|
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(en)
|
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에이에스엠 아이피 홀딩 비.브이. |
Chemical source vessel with dip tube
|
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(en)
|
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2020-11-19 |
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|
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|
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2020-11-19 |
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|
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|
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|
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|
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|
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(en)
|
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2022-03-01 |
Synopsys, Inc. |
Crystal orientation engineering to achieve consistent nanowire shapes
|
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(en)
|
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2020-12-17 |
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|
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(en)
|
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2020-12-23 |
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|
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(en)
|
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에이에스엠 아이피 홀딩 비.브이. |
Temperature control assembly for substrate processing apparatus and method of using same
|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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(en)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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(en)
|
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에이에스엠 아이피 홀딩 비.브이. |
Radical assist ignition plasma system and method
|
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|
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Method of forming structures using a neutral beam
|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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에이에스엠 아이피 홀딩 비.브이. |
Liquid level sensor for a chemical source vessel
|
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(en)
|
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Asm Ip Holding B.V. |
Susceptor shaft
|
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(en)
|
2019-08-19 |
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Asm Ip Holding B.V. |
Susceptor support
|
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(en)
|
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2021-03-01 |
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|
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(en)
|
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2021-03-05 |
에이에스엠 아이피 홀딩 비.브이. |
Method for forming a structure with a hole
|
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(en)
|
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2023-02-28 |
Asm Ip Holding B.V. |
Insulator
|
US11286558B2
(en)
|
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2022-03-29 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
|
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(en)
|
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에이에스엠 아이피 홀딩 비.브이. |
Methods for selective deposition using a sacrificial capping layer
|
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(en)
|
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2021-03-16 |
에이에스엠 아이피 홀딩 비.브이. |
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|
US11562901B2
(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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2021-04-27 |
에이에스엠 아이피 홀딩 비.브이. |
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|
US11637014B2
(en)
|
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2023-04-25 |
Asm Ip Holding B.V. |
Methods for selective deposition of doped semiconductor material
|
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(en)
|
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2021-04-30 |
에이에스엠 아이피 홀딩 비.브이. |
Apparatus and methods for selectively etching films
|
US11646205B2
(en)
|
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2023-05-09 |
Asm Ip Holding B.V. |
Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
|
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(en)
|
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2021-05-14 |
에이에스엠 아이피 홀딩 비.브이. |
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|
US11501968B2
(en)
|
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2022-11-15 |
Asm Ip Holding B.V. |
Method for providing a semiconductor device with silicon filled gaps
|
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(en)
|
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2021-05-31 |
에이에스엠 아이피 홀딩 비.브이. |
Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
|
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(en)
|
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2021-06-04 |
에이에스엠 아이피 홀딩 비.브이. |
Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
|
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(en)
|
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Substrate processing apparatus
|
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(en)
|
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2021-06-01 |
Asm Ip私人控股有限公司 |
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|
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(en)
|
2019-11-29 |
2021-06-01 |
Asm Ip私人控股有限公司 |
Substrate processing apparatus
|
JP2021090042A
(en)
|
2019-12-02 |
2021-06-10 |
エーエスエム アイピー ホールディング ビー.ブイ. |
Substrate processing apparatus and substrate processing method
|
KR20210070898A
(en)
|
2019-12-04 |
2021-06-15 |
에이에스엠 아이피 홀딩 비.브이. |
Substrate processing apparatus
|
TW202125596A
(en)
|
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2021-07-01 |
荷蘭商Asm Ip私人控股有限公司 |
Method of forming vanadium nitride layer and structure including the vanadium nitride layer
|
US11527403B2
(en)
|
2019-12-19 |
2022-12-13 |
Asm Ip Holding B.V. |
Methods for filling a gap feature on a substrate surface and related semiconductor structures
|
KR20210095050A
(en)
|
2020-01-20 |
2021-07-30 |
에이에스엠 아이피 홀딩 비.브이. |
Method of forming thin film and method of modifying surface of thin film
|
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(en)
|
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2021-08-16 |
荷蘭商Asm Ip私人控股有限公司 |
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|
KR20210100010A
(en)
|
2020-02-04 |
2021-08-13 |
에이에스엠 아이피 홀딩 비.브이. |
Method and apparatus for transmittance measurements of large articles
|
US11776846B2
(en)
|
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2023-10-03 |
Asm Ip Holding B.V. |
Methods for depositing gap filling fluids and related systems and devices
|
US11781243B2
(en)
|
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2023-10-10 |
Asm Ip Holding B.V. |
Method for depositing low temperature phosphorous-doped silicon
|
US11876356B2
(en)
|
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Asm Ip Holding B.V. |
Lockout tagout assembly and system and method of using same
|
KR20210116240A
(en)
|
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2021-09-27 |
에이에스엠 아이피 홀딩 비.브이. |
Substrate handling device with adjustable joints
|
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(en)
|
2020-03-12 |
2021-09-14 |
Asm Ip私人控股有限公司 |
Method for producing a layer structure having a target topological profile
|
KR20210124042A
(en)
|
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2021-10-14 |
에이에스엠 아이피 홀딩 비.브이. |
Thin film forming method
|
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(en)
|
2020-04-03 |
2021-12-16 |
荷蘭商Asm Ip控股公司 |
Method for forming barrier layer and method for manufacturing semiconductor device
|
TW202145344A
(en)
|
2020-04-08 |
2021-12-01 |
荷蘭商Asm Ip私人控股有限公司 |
Apparatus and methods for selectively etching silcon oxide films
|
US11821078B2
(en)
|
2020-04-15 |
2023-11-21 |
Asm Ip Holding B.V. |
Method for forming precoat film and method for forming silicon-containing film
|
KR20210132605A
(en)
|
2020-04-24 |
2021-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
Vertical batch furnace assembly comprising a cooling gas supply
|
KR20210132600A
(en)
|
2020-04-24 |
2021-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
|
TW202140831A
(en)
|
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2021-11-01 |
荷蘭商Asm Ip私人控股有限公司 |
Method of forming vanadium nitride–containing layer and structure comprising the same
|
KR20210134226A
(en)
|
2020-04-29 |
2021-11-09 |
에이에스엠 아이피 홀딩 비.브이. |
Solid source precursor vessel
|
KR20210134869A
(en)
|
2020-05-01 |
2021-11-11 |
에이에스엠 아이피 홀딩 비.브이. |
Fast FOUP swapping with a FOUP handler
|
KR20210141379A
(en)
|
2020-05-13 |
2021-11-23 |
에이에스엠 아이피 홀딩 비.브이. |
Laser alignment fixture for a reactor system
|
KR20210143653A
(en)
|
2020-05-19 |
2021-11-29 |
에이에스엠 아이피 홀딩 비.브이. |
Substrate processing apparatus
|
KR20210145078A
(en)
|
2020-05-21 |
2021-12-01 |
에이에스엠 아이피 홀딩 비.브이. |
Structures including multiple carbon layers and methods of forming and using same
|
TW202201602A
(en)
|
2020-05-29 |
2022-01-01 |
荷蘭商Asm Ip私人控股有限公司 |
Substrate processing device
|
TW202218133A
(en)
|
2020-06-24 |
2022-05-01 |
荷蘭商Asm Ip私人控股有限公司 |
Method for forming a layer provided with silicon
|
TW202217953A
(en)
|
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2022-05-01 |
荷蘭商Asm Ip私人控股有限公司 |
Substrate processing method
|
KR20220010438A
(en)
|
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2022-01-25 |
에이에스엠 아이피 홀딩 비.브이. |
Structures and methods for use in photolithography
|
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|
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Method and system for depositing molybdenum layers
|
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(en)
|
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2022-03-07 |
에이에스엠 아이피 홀딩 비.브이. |
Method and system for forming metal silicon oxide and metal silicon oxynitride
|
USD990534S1
(en)
|
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2023-06-27 |
Asm Ip Holding B.V. |
Weighted lift pin
|
USD1012873S1
(en)
|
2020-09-24 |
2024-01-30 |
Asm Ip Holding B.V. |
Electrode for semiconductor processing apparatus
|
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|
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Method of depositing material on stepped structure
|
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(en)
|
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2022-04-29 |
에이에스엠 아이피 홀딩 비.브이. |
Method of depositing vanadium metal, structure, device and a deposition assembly
|
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|
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2022-06-16 |
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Method for forming layer on substrate, and semiconductor processing system
|
KR20220076343A
(en)
|
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2022-06-08 |
에이에스엠 아이피 홀딩 비.브이. |
an injector configured for arrangement within a reaction chamber of a substrate processing apparatus
|
US11946137B2
(en)
|
2020-12-16 |
2024-04-02 |
Asm Ip Holding B.V. |
Runout and wobble measurement fixtures
|
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|
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|
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(en)
*
|
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|
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(en)
|
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2023-03-14 |
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Gas distributor for substrate processing apparatus
|
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(en)
|
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Reactor wall for substrate processing apparatus
|
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|
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|
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|
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|
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|
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|