CA2298491A1 - Nitride semiconductor device - Google Patents

Nitride semiconductor device Download PDF

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Publication number
CA2298491A1
CA2298491A1 CA002298491A CA2298491A CA2298491A1 CA 2298491 A1 CA2298491 A1 CA 2298491A1 CA 002298491 A CA002298491 A CA 002298491A CA 2298491 A CA2298491 A CA 2298491A CA 2298491 A1 CA2298491 A1 CA 2298491A1
Authority
CA
Canada
Prior art keywords
nitride semiconductor
semiconductor device
type contact
layer
contact layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002298491A
Other languages
French (fr)
Other versions
CA2298491C (en
Inventor
Shuji Nakamura
Takashi Mukai
Koji Tanizawa
Tomotsugu Mitani
Hiromitsu Marui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Chemical Industries, Ltd.
Shuji Nakamura
Takashi Mukai
Koji Tanizawa
Tomotsugu Mitani
Hiromitsu Marui
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34897297A external-priority patent/JP3448196B2/en
Priority claimed from JP34897397A external-priority patent/JP3275810B2/en
Priority claimed from JP17662398A external-priority patent/JP3620292B2/en
Priority claimed from JP19982998A external-priority patent/JP3744211B2/en
Application filed by Nichia Chemical Industries, Ltd., Shuji Nakamura, Takashi Mukai, Koji Tanizawa, Tomotsugu Mitani, Hiromitsu Marui, Nichia Corporation filed Critical Nichia Chemical Industries, Ltd.
Publication of CA2298491A1 publication Critical patent/CA2298491A1/en
Application granted granted Critical
Publication of CA2298491C publication Critical patent/CA2298491C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers

Abstract

The present invention is directed to a nitride semiconductor device used chiefly as an LD and an LED element . In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3 x 10 18 cm-3, and the resistivity can be lowered below 8 x 10 -3 .OMEGA. cm.
CA002298491A 1997-07-25 1998-07-27 Nitride semiconductor device Expired - Lifetime CA2298491C (en)

Applications Claiming Priority (21)

Application Number Priority Date Filing Date Title
JP19947197 1997-07-25
JP9/199471 1997-07-25
JP23552497 1997-09-01
JP9/235524 1997-09-01
JP28630497 1997-10-20
JP9/286304 1997-10-20
JP30432897 1997-11-06
JP9/304328 1997-11-06
JP9/317421 1997-11-18
JP31742197 1997-11-18
JP34897297A JP3448196B2 (en) 1997-07-25 1997-12-18 Nitride semiconductor light emitting device
JP9/348972 1997-12-18
JP9/348973 1997-12-18
JP34897397A JP3275810B2 (en) 1997-11-18 1997-12-18 Nitride semiconductor light emitting device
JP17662398A JP3620292B2 (en) 1997-09-01 1998-06-08 Nitride semiconductor device
JP17663498 1998-06-08
JP10/176623 1998-06-08
JP10/176634 1998-06-08
JP19982998A JP3744211B2 (en) 1997-09-01 1998-06-29 Nitride semiconductor device
JP10/199829 1998-06-29
PCT/JP1998/003336 WO1999005728A1 (en) 1997-07-25 1998-07-27 Nitride semiconductor device

Publications (2)

Publication Number Publication Date
CA2298491A1 true CA2298491A1 (en) 1999-02-04
CA2298491C CA2298491C (en) 2009-10-06

Family

ID=27580368

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002298491A Expired - Lifetime CA2298491C (en) 1997-07-25 1998-07-27 Nitride semiconductor device

Country Status (7)

Country Link
US (3) US7365369B2 (en)
EP (1) EP1014455B1 (en)
CN (1) CN1142598C (en)
AU (1) AU747260B2 (en)
CA (1) CA2298491C (en)
DE (1) DE69835216T2 (en)
WO (1) WO1999005728A1 (en)

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