CA2295180A1 - Gas injection disc assembly for cvd applications - Google Patents

Gas injection disc assembly for cvd applications Download PDF

Info

Publication number
CA2295180A1
CA2295180A1 CA002295180A CA2295180A CA2295180A1 CA 2295180 A1 CA2295180 A1 CA 2295180A1 CA 002295180 A CA002295180 A CA 002295180A CA 2295180 A CA2295180 A CA 2295180A CA 2295180 A1 CA2295180 A1 CA 2295180A1
Authority
CA
Canada
Prior art keywords
insert
outer ring
gas
plenum
injectant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002295180A
Other languages
French (fr)
Other versions
CA2295180C (en
Inventor
Daniel V. Raney
George Quirk
C.B. Shepard, Jr.
Michael Scott Heuser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Ceramics and Plastics Inc
Original Assignee
Daniel V. Raney
George Quirk
C.B. Shepard, Jr.
Michael Scott Heuser
Saint-Gobain Industrial Ceramics, Inc.
Celestech, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daniel V. Raney, George Quirk, C.B. Shepard, Jr., Michael Scott Heuser, Saint-Gobain Industrial Ceramics, Inc., Celestech, Inc. filed Critical Daniel V. Raney
Publication of CA2295180A1 publication Critical patent/CA2295180A1/en
Application granted granted Critical
Publication of CA2295180C publication Critical patent/CA2295180C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Abstract

A gas injection disc is provided which includes an outer ring and a tubular modular insert which slips into the outer ring. The outer ring is provided with an inner bore, a ring-shaped plenum located around the inner bore, an outer gas sealing surface around the plenum, and two gas feed paths extending from the periphery of the outer ring to the plenum. The gas feed paths are each provided with a gas feed attachment for coupling gas supply tubes thereto. The insert is provided with a plurality of radially aligned injectant holes, an inner gas sealing surface, and an axial bore. The insert is seated in the inner bore of the outer ring such that the inner and outer gas sealing surface face each other with a small gap provided therebetween which enables the insertion of the insert into the inner bore. The insert thereby substantially encloses the plenum, and the injectant holes are aligned with the plenum to receive injectant gases and direct the injectant gases into the axial bore of the insert. During the CVD process, the heat generated by the arc jet causes the insert to expand and eliminate the gap between the inner and outer sealing surfaces to thereby prevent undesirable gas leakage. Once the CVD operation is stopped the insert is permitted to cool and contract and return to its cooled dimensions unencumbered by the outer ring. The insert may then be removed for cleaning or for replacement with an insert having different characteristics.
CA002295180A 1997-06-26 1998-06-22 Gas injection disc assembly for cvd applications Expired - Fee Related CA2295180C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/883,020 US5846330A (en) 1997-06-26 1997-06-26 Gas injection disc assembly for CVD applications
US08/883,020 1997-06-26
PCT/US1998/013037 WO1999000533A1 (en) 1997-06-26 1998-06-22 Gas injection disc assembly for cvd applications

Publications (2)

Publication Number Publication Date
CA2295180A1 true CA2295180A1 (en) 1999-01-07
CA2295180C CA2295180C (en) 2003-11-04

Family

ID=25381825

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002295180A Expired - Fee Related CA2295180C (en) 1997-06-26 1998-06-22 Gas injection disc assembly for cvd applications

Country Status (6)

Country Link
US (1) US5846330A (en)
EP (1) EP0991792B1 (en)
JP (1) JP2002508808A (en)
CA (1) CA2295180C (en)
DE (1) DE69804614T2 (en)
WO (1) WO1999000533A1 (en)

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US6884296B2 (en) * 2002-08-23 2005-04-26 Micron Technology, Inc. Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
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US20070048456A1 (en) * 2004-09-14 2007-03-01 Keshner Marvin S Plasma enhanced chemical vapor deposition apparatus and method
US7562638B2 (en) * 2005-12-23 2009-07-21 Lam Research Corporation Methods and arrangement for implementing highly efficient plasma traps
US7554053B2 (en) * 2005-12-23 2009-06-30 Lam Research Corporation Corrugated plasma trap arrangement for creating a highly efficient downstream microwave plasma system
US7679024B2 (en) * 2005-12-23 2010-03-16 Lam Research Corporation Highly efficient gas distribution arrangement for plasma tube of a plasma processing chamber
US20080139003A1 (en) * 2006-10-26 2008-06-12 Shahid Pirzada Barrier coating deposition for thin film devices using plasma enhanced chemical vapor deposition process
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US20090120364A1 (en) * 2007-11-09 2009-05-14 Applied Materials, Inc. Gas mixing swirl insert assembly
US8291857B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
TWI385042B (en) * 2009-06-26 2013-02-11 Iner Aec Executive Yuan Multi-gas mixer and device for supplying mixed gas to plasma torch
CN102762767B (en) * 2010-03-12 2015-11-25 应用材料公司 There is the atomic layer deposition chambers in multiple injections road
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US10035245B2 (en) 2012-04-30 2018-07-31 Eigen Systems Limited Clamp foot air jet apparatus
JP6473131B2 (en) 2013-03-12 2019-02-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Multi-zone gas injection assembly with azimuthal and radial distribution control
KR102156795B1 (en) * 2013-05-15 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Deposition apparatus
US10113232B2 (en) 2014-07-31 2018-10-30 Lam Research Corporation Azimuthal mixer
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Also Published As

Publication number Publication date
DE69804614T2 (en) 2002-11-21
WO1999000533A1 (en) 1999-01-07
EP0991792B1 (en) 2002-04-03
US5846330A (en) 1998-12-08
JP2002508808A (en) 2002-03-19
EP0991792A1 (en) 2000-04-12
DE69804614D1 (en) 2002-05-08
CA2295180C (en) 2003-11-04

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