CA2286019A1 - Recovery of surface-ready silicon carbide substrates - Google Patents
Recovery of surface-ready silicon carbide substrates Download PDFInfo
- Publication number
- CA2286019A1 CA2286019A1 CA002286019A CA2286019A CA2286019A1 CA 2286019 A1 CA2286019 A1 CA 2286019A1 CA 002286019 A CA002286019 A CA 002286019A CA 2286019 A CA2286019 A CA 2286019A CA 2286019 A1 CA2286019 A1 CA 2286019A1
- Authority
- CA
- Canada
- Prior art keywords
- silicon carbide
- epitaxial layer
- carbide substrates
- group iii
- recovery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
A method is disclosed for recovering surface-ready silicon carbide substrates from heteroepitaxial structures of Group III nitrides on silicon carbide substrates. The method comprises subjecting a Group III nitride epitaxial layer on a silicon carbide substrate to a stress that sufficiently increases the number of dislocations in the epitaxial layer to make the epitaxial layer subject to attack and dissolution in a mineral acid, but that otherwise does not affect the silicon carbide substrate, and threafter contacting the epitaxial layer with a mineral acid to remove the Group III nitride while leaving the silicon carbide substrate unaffected.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/840,961 US5923946A (en) | 1997-04-17 | 1997-04-17 | Recovery of surface-ready silicon carbide substrates |
US08/840,961 | 1997-04-17 | ||
PCT/US1998/006836 WO1998047185A1 (en) | 1997-04-17 | 1998-04-07 | Recovery of surface-ready silicon carbide substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2286019A1 true CA2286019A1 (en) | 1998-10-22 |
CA2286019C CA2286019C (en) | 2003-10-07 |
Family
ID=25283677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002286019A Expired - Fee Related CA2286019C (en) | 1997-04-17 | 1998-04-07 | Recovery of surface-ready silicon carbide substrates |
Country Status (12)
Country | Link |
---|---|
US (1) | US5923946A (en) |
EP (1) | EP0976162B1 (en) |
JP (1) | JP4063336B2 (en) |
KR (1) | KR100569796B1 (en) |
CN (1) | CN1123073C (en) |
AT (1) | ATE299296T1 (en) |
AU (1) | AU6887498A (en) |
CA (1) | CA2286019C (en) |
DE (1) | DE69830788T2 (en) |
ES (1) | ES2244055T3 (en) |
TW (1) | TW385487B (en) |
WO (1) | WO1998047185A1 (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5679152A (en) * | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
US6533874B1 (en) | 1996-12-03 | 2003-03-18 | Advanced Technology Materials, Inc. | GaN-based devices using thick (Ga, Al, In)N base layers |
CA2298491C (en) | 1997-07-25 | 2009-10-06 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
US6459100B1 (en) * | 1998-09-16 | 2002-10-01 | Cree, Inc. | Vertical geometry ingan LED |
US6503769B2 (en) * | 1998-10-26 | 2003-01-07 | Matsushita Electronics Corporation | Semiconductor device and method for fabricating the same |
JP3770014B2 (en) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | Nitride semiconductor device |
WO2000052796A1 (en) | 1999-03-04 | 2000-09-08 | Nichia Corporation | Nitride semiconductor laser element |
US6995032B2 (en) * | 2002-07-19 | 2006-02-07 | Cree, Inc. | Trench cut light emitting diodes and methods of fabricating same |
CN1729582A (en) * | 2002-12-20 | 2006-02-01 | 克里公司 | Methods of forming electronic devices including semiconductor mesa structures and conductivity junctions and related devices |
US20050079642A1 (en) * | 2003-10-14 | 2005-04-14 | Matsushita Elec. Ind. Co. Ltd. | Manufacturing method of nitride semiconductor device |
US7008861B2 (en) * | 2003-12-11 | 2006-03-07 | Cree, Inc. | Semiconductor substrate assemblies and methods for preparing and dicing the same |
JP2006253172A (en) * | 2005-03-08 | 2006-09-21 | Toshiba Corp | Semiconductor light emitting element, semiconductor light emitting apparatus and method of manufacturing semiconductor light emitting element |
US20060267043A1 (en) * | 2005-05-27 | 2006-11-30 | Emerson David T | Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices |
TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
TW201310692A (en) * | 2011-08-31 | 2013-03-01 | Solution Chemicals Inc | Reproducing method of LED substrate |
CN102593285B (en) * | 2012-03-06 | 2014-07-09 | 华灿光电股份有限公司 | Method for recovering pattern sapphire substrate |
KR101226905B1 (en) * | 2012-07-31 | 2013-01-29 | 주식회사 세미콘라이트 | Method of recycling a substrate used for depositng iii-nitride semiconductor thereon |
KR101226904B1 (en) * | 2012-07-31 | 2013-01-29 | 주식회사 세미콘라이트 | Method of recycling a substrate used for depositng iii-nitride semiconductor thereon |
CN103730548B (en) * | 2013-12-28 | 2016-07-06 | 福建省诺希新材料科技有限公司 | A kind of method utilizing high temperature oxidation stability gas to reclaim patterned sapphire substrate |
TWI737610B (en) * | 2015-05-20 | 2021-09-01 | 美商納諾光子公司 | Processes for improving efficiency of light emitting diodes |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50113500A (en) * | 1974-02-15 | 1975-09-05 | ||
US3923567A (en) * | 1974-08-09 | 1975-12-02 | Silicon Materials Inc | Method of reclaiming a semiconductor wafer |
US4009299A (en) * | 1975-10-22 | 1977-02-22 | Motorola, Inc. | Tin strip formulation for metal to glass seal diodes |
JPS5343480A (en) * | 1976-10-01 | 1978-04-19 | Matsushita Electric Ind Co Ltd | Etching method of gallium nitride |
JPS60960B2 (en) * | 1979-12-17 | 1985-01-11 | 松下電器産業株式会社 | Method for manufacturing gallium nitride light emitting device array |
DE3725346A1 (en) * | 1987-07-30 | 1989-02-09 | Nukem Gmbh | METHOD FOR REUSE OF SILICON BASE MATERIAL OF A METAL ISOLATOR SEMICONDUCTOR (MIS) INVERSION LAYER SOLAR CELL |
JPH02228470A (en) * | 1989-03-02 | 1990-09-11 | Toshiba Corp | Sputtering target |
US5030536A (en) * | 1989-12-26 | 1991-07-09 | Xerox Corporation | Processes for restoring amorphous silicon imaging members |
US5131979A (en) * | 1991-05-21 | 1992-07-21 | Lawrence Technology | Semiconductor EPI on recycled silicon wafers |
US5393993A (en) * | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
EP0668611A1 (en) * | 1994-02-22 | 1995-08-23 | International Business Machines Corporation | Method for recovering bare semiconductor chips from plastic packaged modules |
US5523589A (en) * | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
SE9501312D0 (en) * | 1995-04-10 | 1995-04-10 | Abb Research Ltd | Method of procucing a semiconductor device |
-
1997
- 1997-04-17 US US08/840,961 patent/US5923946A/en not_active Expired - Lifetime
-
1998
- 1998-04-07 CA CA002286019A patent/CA2286019C/en not_active Expired - Fee Related
- 1998-04-07 ES ES98914546T patent/ES2244055T3/en not_active Expired - Lifetime
- 1998-04-07 AU AU68874/98A patent/AU6887498A/en not_active Abandoned
- 1998-04-07 WO PCT/US1998/006836 patent/WO1998047185A1/en active IP Right Grant
- 1998-04-07 JP JP54398498A patent/JP4063336B2/en not_active Expired - Lifetime
- 1998-04-07 KR KR1019997009641A patent/KR100569796B1/en not_active IP Right Cessation
- 1998-04-07 EP EP98914546A patent/EP0976162B1/en not_active Expired - Lifetime
- 1998-04-07 DE DE69830788T patent/DE69830788T2/en not_active Expired - Lifetime
- 1998-04-07 AT AT98914546T patent/ATE299296T1/en not_active IP Right Cessation
- 1998-04-07 CN CN98804197A patent/CN1123073C/en not_active Expired - Lifetime
- 1998-04-17 TW TW087105882A patent/TW385487B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO1998047185A1 (en) | 1998-10-22 |
ATE299296T1 (en) | 2005-07-15 |
CN1123073C (en) | 2003-10-01 |
CN1252895A (en) | 2000-05-10 |
KR20010006551A (en) | 2001-01-26 |
TW385487B (en) | 2000-03-21 |
CA2286019C (en) | 2003-10-07 |
EP0976162A1 (en) | 2000-02-02 |
ES2244055T3 (en) | 2005-12-01 |
KR100569796B1 (en) | 2006-04-10 |
DE69830788T2 (en) | 2006-05-04 |
AU6887498A (en) | 1998-11-11 |
JP2001525121A (en) | 2001-12-04 |
JP4063336B2 (en) | 2008-03-19 |
EP0976162B1 (en) | 2005-07-06 |
US5923946A (en) | 1999-07-13 |
DE69830788D1 (en) | 2005-08-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |
Effective date: 20130408 |
|
MKLA | Lapsed |
Effective date: 20130408 |