CA2285067A1 - Silicon carbide field controlled bipolar switch - Google Patents

Silicon carbide field controlled bipolar switch Download PDF

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Publication number
CA2285067A1
CA2285067A1 CA002285067A CA2285067A CA2285067A1 CA 2285067 A1 CA2285067 A1 CA 2285067A1 CA 002285067 A CA002285067 A CA 002285067A CA 2285067 A CA2285067 A CA 2285067A CA 2285067 A1 CA2285067 A1 CA 2285067A1
Authority
CA
Canada
Prior art keywords
epitaxial layer
silicon carbide
conductivity type
ohmic
ohmic contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002285067A
Other languages
French (fr)
Other versions
CA2285067C (en
Inventor
Ranbir Singh
John W. Palmour
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2285067A1 publication Critical patent/CA2285067A1/en
Application granted granted Critical
Publication of CA2285067C publication Critical patent/CA2285067C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Abstract

A field controlled bipolar switch having a bulk single crystal silicon carbide substrate of a first conductivity type having an upper surface and a lower surface.
A first epitaxial layer of a second conductivity type sil-icon carbide is formed upon the upper surface of the substrate. A second epitaxial layer of the second conductivity type silicon carbide is formed on the first epitaxial layer of silicon carbide. A plurality of regions of a third conductivity type silicon carbide are formed in the second epitaxial layer to form a gate grid in the second epitaxial layer. A third eptiaxial layer of the second conductivity type silicon carbide is formed on the second epitaxial layer and a fourth epitaxial layer of the second conductivity type silicon carbide is formed upon the third epitaxial layer. The fouth epitaxial layer has a higher carrier concentration than is present in the first, second and third epitaxial layers. A first ohmic contact is formed upon the fourth epitaxial layer and a second ohmic contact is formed on the lower surface of the substrate. An ohmic gate contact is connected to the gate grid for pinching off the flow of current between the first ohmic contact and the second ohmic contact when a bias is applied to the ohmic gate contact.
CA002285067A 1997-04-30 1998-03-20 Silicon carbide field controlled bipolar switch Expired - Fee Related CA2285067C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/846,286 1997-04-30
US08/846,286 US6011279A (en) 1997-04-30 1997-04-30 Silicon carbide field controlled bipolar switch
PCT/US1998/005487 WO1998049731A1 (en) 1997-04-30 1998-03-20 Silicon carbide field conrolled bipolar switch

Publications (2)

Publication Number Publication Date
CA2285067A1 true CA2285067A1 (en) 1998-11-05
CA2285067C CA2285067C (en) 2006-05-02

Family

ID=25297449

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002285067A Expired - Fee Related CA2285067C (en) 1997-04-30 1998-03-20 Silicon carbide field controlled bipolar switch

Country Status (10)

Country Link
US (1) US6011279A (en)
EP (1) EP0979531B1 (en)
JP (1) JP4680330B2 (en)
KR (1) KR100514398B1 (en)
CN (1) CN1166001C (en)
AT (1) ATE240588T1 (en)
AU (1) AU6572898A (en)
CA (1) CA2285067C (en)
DE (1) DE69814619T2 (en)
WO (1) WO1998049731A1 (en)

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DE19833214C1 (en) * 1998-07-23 1999-08-12 Siemens Ag Vertical J-FET semiconductor device
US6884644B1 (en) 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6803243B2 (en) 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
JP3770014B2 (en) 1999-02-09 2006-04-26 日亜化学工業株式会社 Nitride semiconductor device
DE60043536D1 (en) 1999-03-04 2010-01-28 Nichia Corp NITRIDHALBLEITERLASERELEMENT
SE9901410D0 (en) * 1999-04-21 1999-04-21 Abb Research Ltd Abipolar transistor
US6909119B2 (en) * 2001-03-15 2005-06-21 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6514779B1 (en) * 2001-10-17 2003-02-04 Cree, Inc. Large area silicon carbide devices and manufacturing methods therefor
US6734462B1 (en) 2001-12-07 2004-05-11 The United States Of America As Represented By The Secretary Of The Army Silicon carbide power devices having increased voltage blocking capabilities
CA2381128A1 (en) * 2002-04-09 2003-10-09 Quantiscript Inc. Plasma polymerized electron beam resist
US7173285B2 (en) * 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
CN100533663C (en) * 2004-03-18 2009-08-26 克里公司 Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites
DE102004047313B3 (en) * 2004-09-29 2006-03-30 Siced Electronics Development Gmbh & Co. Kg Semiconductor arrangement with a tunnel contact and method for its production
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
JP2011199306A (en) * 2011-06-03 2011-10-06 Sumitomo Electric Ind Ltd Semiconductor device and method of manufacturing the same
CN104201211B (en) * 2014-08-27 2016-03-30 温州大学 Preparation SiC Ultrafast recovery diode and technique
SE541290C2 (en) * 2017-09-15 2019-06-11 Ascatron Ab A method for manufacturing a grid
CN113097298A (en) * 2021-03-30 2021-07-09 全球能源互联网研究院有限公司 Insulated gate bipolar transistor and preparation method thereof

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US4171995A (en) * 1975-10-20 1979-10-23 Semiconductor Research Foundation Epitaxial deposition process for producing an electrostatic induction type thyristor
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid
US4132996A (en) * 1976-11-08 1979-01-02 General Electric Company Electric field-controlled semiconductor device
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
US4569118A (en) * 1977-12-23 1986-02-11 General Electric Company Planar gate turn-off field controlled thyristors and planar junction gate field effect transistors, and method of making same
US4364072A (en) * 1978-03-17 1982-12-14 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction type semiconductor device with multiple doped layers for potential modification
US4937644A (en) * 1979-11-16 1990-06-26 General Electric Company Asymmetrical field controlled thyristor
US4571815A (en) * 1981-11-23 1986-02-25 General Electric Company Method of making vertical channel field controlled device employing a recessed gate structure
US4466173A (en) * 1981-11-23 1984-08-21 General Electric Company Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques
US4587712A (en) * 1981-11-23 1986-05-13 General Electric Company Method for making vertical channel field controlled device employing a recessed gate structure
US5087576A (en) * 1987-10-26 1992-02-11 North Carolina State University Implantation and electrical activation of dopants into monocrystalline silicon carbide
US4994883A (en) * 1989-10-02 1991-02-19 General Electric Company Field controlled diode (FCD) having MOS trench gates
US5202750A (en) * 1990-04-09 1993-04-13 U.S. Philips Corp. MOS-gated thyristor
WO1993013560A1 (en) * 1991-12-23 1993-07-08 Forschungszentrum Jülich GmbH Electronic component and process for making it
US5369291A (en) * 1993-03-29 1994-11-29 Sunpower Corporation Voltage controlled thyristor
US5554561A (en) * 1993-04-30 1996-09-10 Texas Instruments Incorporated Epitaxial overgrowth method
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US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
AU4942993A (en) * 1993-09-08 1995-03-27 Siemens Aktiengesellschaft Current limiting device
DE9411601U1 (en) * 1993-09-08 1994-10-13 Siemens Ag Current limiting switch
US5612547A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corporation Silicon carbide static induction transistor
US5387805A (en) * 1994-01-05 1995-02-07 Metzler; Richard A. Field controlled thyristor
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
US5471075A (en) * 1994-05-26 1995-11-28 North Carolina State University Dual-channel emitter switched thyristor with trench gate
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JP3277075B2 (en) * 1994-09-07 2002-04-22 日本碍子株式会社 Semiconductor device and manufacturing method thereof
SE9601176D0 (en) * 1996-03-27 1996-03-27 Abb Research Ltd A method of producing a semiconductor device having semiconductor layers of SiC using the implanting step and a device produced thereby
DE19644821C1 (en) * 1996-10-29 1998-02-12 Daimler Benz Ag Controllable semiconductor structure for use instead of JFET, MESFET

Also Published As

Publication number Publication date
CA2285067C (en) 2006-05-02
KR100514398B1 (en) 2005-09-13
EP0979531A1 (en) 2000-02-16
DE69814619T2 (en) 2004-03-18
JP4680330B2 (en) 2011-05-11
CN1254442A (en) 2000-05-24
CN1166001C (en) 2004-09-08
US6011279A (en) 2000-01-04
WO1998049731A1 (en) 1998-11-05
JP2001522533A (en) 2001-11-13
EP0979531B1 (en) 2003-05-14
DE69814619D1 (en) 2003-06-18
AU6572898A (en) 1998-11-24
KR20010006559A (en) 2001-01-26
ATE240588T1 (en) 2003-05-15

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Effective date: 20140320