CA2258080A1 - Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device - Google Patents

Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device

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Publication number
CA2258080A1
CA2258080A1 CA002258080A CA2258080A CA2258080A1 CA 2258080 A1 CA2258080 A1 CA 2258080A1 CA 002258080 A CA002258080 A CA 002258080A CA 2258080 A CA2258080 A CA 2258080A CA 2258080 A1 CA2258080 A1 CA 2258080A1
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CA
Canada
Prior art keywords
nitride semiconductor
support member
selective growth
substrate
windows
Prior art date
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Granted
Application number
CA002258080A
Other languages
French (fr)
Other versions
CA2258080C (en
Inventor
Hiroyuki Kiyoku
Shuji Nakamura
Tokuya Kozaki
Naruhito Iwasa
Kazuyuki Chocho
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Nichia Corp
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Individual
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Publication of CA2258080A1 publication Critical patent/CA2258080A1/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
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    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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    • C30B29/403—AIII-nitrides
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    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
CA002258080A 1997-04-11 1998-04-09 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device Expired - Lifetime CA2258080C (en)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
JP9331597 1997-04-11
JP9-093315 1997-04-11
JP17449497 1997-06-30
JP18107197 1997-07-07
JP9-181071 1997-07-07
JP20147797 1997-07-28
JP9-201477 1997-07-28
JP27744897 1997-10-09
JP9-277448 1997-10-09
JP9-174494 1997-10-21
JP9-290098 1997-10-22
JP29009897 1997-10-22
JP9-324997 1997-11-26
JP32499797 1997-11-26
PCT/JP1998/001640 WO1998047170A1 (en) 1997-04-11 1998-04-09 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device

Publications (2)

Publication Number Publication Date
CA2258080A1 true CA2258080A1 (en) 1998-10-22
CA2258080C CA2258080C (en) 2007-06-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
CA002258080A Expired - Lifetime CA2258080C (en) 1997-04-11 1998-04-09 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device

Country Status (6)

Country Link
US (7) US6153010A (en)
EP (2) EP0942459B1 (en)
CN (2) CN1292458C (en)
AT (1) ATE550461T1 (en)
CA (1) CA2258080C (en)
WO (1) WO1998047170A1 (en)

Cited By (10)

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CN1223009A (en) 1999-07-14
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US7083679B2 (en) 2006-08-01
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US20070057276A1 (en) 2007-03-15
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US20030037722A1 (en) 2003-02-27

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