CA2197491A1 - Ferroelectric capacitor and method for manufacturing thereof - Google Patents

Ferroelectric capacitor and method for manufacturing thereof

Info

Publication number
CA2197491A1
CA2197491A1 CA002197491A CA2197491A CA2197491A1 CA 2197491 A1 CA2197491 A1 CA 2197491A1 CA 002197491 A CA002197491 A CA 002197491A CA 2197491 A CA2197491 A CA 2197491A CA 2197491 A1 CA2197491 A1 CA 2197491A1
Authority
CA
Canada
Prior art keywords
manufacturing
ferroelectric capacitor
dielectric
layer
lower electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002197491A
Other languages
French (fr)
Other versions
CA2197491C (en
Inventor
Takashi Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Takashi Nakamura
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Takashi Nakamura, Rohm Co., Ltd. filed Critical Takashi Nakamura
Publication of CA2197491A1 publication Critical patent/CA2197491A1/en
Application granted granted Critical
Publication of CA2197491C publication Critical patent/CA2197491C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Abstract

A dielectric capacitor having excellent dielectric properties which comprises a silicon oxide layer (4), a lower electrode (12), a ferroelectric layer (8), and an upper electrode (15) formed on a silicon substrate (2). The lower electrode (12) is formed of palladium oxide, and so is the upper electrode (15). Palladium oxide prevents the permeation of oxygen through the dielectric layer (8), thus offering a dielectric capacitor having excellent dielectric properties.
CA002197491A 1995-07-07 1996-07-05 Ferroelectric capacitor and method for manufacturing thereof Expired - Fee Related CA2197491C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP17214295A JP3929513B2 (en) 1995-07-07 1995-07-07 Dielectric capacitor and manufacturing method thereof
JPHEI7-172142 1995-07-07
PCT/JP1996/001883 WO1997003468A1 (en) 1995-07-07 1996-07-05 Dielectric capacitor and process for preparing the same

Publications (2)

Publication Number Publication Date
CA2197491A1 true CA2197491A1 (en) 1997-01-30
CA2197491C CA2197491C (en) 2002-01-01

Family

ID=15936351

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002197491A Expired - Fee Related CA2197491C (en) 1995-07-07 1996-07-05 Ferroelectric capacitor and method for manufacturing thereof

Country Status (8)

Country Link
US (5) US6454914B1 (en)
EP (2) EP0785579B1 (en)
JP (1) JP3929513B2 (en)
KR (1) KR100385446B1 (en)
CN (1) CN1085411C (en)
CA (1) CA2197491C (en)
DE (1) DE69633554T2 (en)
WO (1) WO1997003468A1 (en)

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US6699304B1 (en) * 1997-02-24 2004-03-02 Superior Micropowders, Llc Palladium-containing particles, method and apparatus of manufacture, palladium-containing devices made therefrom
KR100434479B1 (en) * 1997-07-10 2004-09-18 삼성전자주식회사 Highly integrated ferroelectric floating gate ram capable of being operated with one transistor and manufacturing method thereof
JP3517876B2 (en) * 1998-10-14 2004-04-12 セイコーエプソン株式会社 Ferroelectric thin film element manufacturing method, ink jet recording head, and ink jet printer
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US6214661B1 (en) * 2000-01-21 2001-04-10 Infineon Technologoies North America Corp. Method to prevent oxygen out-diffusion from BSTO containing micro-electronic device
JP4228560B2 (en) * 2000-11-01 2009-02-25 ソニー株式会社 Capacitor element and manufacturing method thereof
US7378719B2 (en) * 2000-12-20 2008-05-27 Micron Technology, Inc. Low leakage MIM capacitor
JP4428500B2 (en) 2001-07-13 2010-03-10 富士通マイクロエレクトロニクス株式会社 Capacitor element and manufacturing method thereof
US7335552B2 (en) * 2002-05-15 2008-02-26 Raytheon Company Electrode for thin film capacitor devices
JP2003332539A (en) * 2002-05-17 2003-11-21 Nec Electronics Corp Ferroelectric capacitor, manufacturing method thereof, and semiconductor storage device
KR100487528B1 (en) * 2002-06-26 2005-05-03 삼성전자주식회사 Ferroelectric capacitor having metal oxide for prohobiting fatigue and method of forming the same
JP2004296929A (en) * 2003-03-27 2004-10-21 Seiko Epson Corp Process for fabricating ferroelectric capacitor, ferroelectric capacitor, memory element, electronic element, memory device and electronic apparatus
US7030463B1 (en) * 2003-10-01 2006-04-18 University Of Dayton Tuneable electromagnetic bandgap structures based on high resistivity silicon substrates
US7719392B2 (en) * 2003-10-20 2010-05-18 University Of Dayton Ferroelectric varactors suitable for capacitive shunt switching
US20070069264A1 (en) * 2003-10-20 2007-03-29 Guru Subramanyam Ferroelectric varactors suitable for capacitive shunt switching and wireless sensing
KR20060094525A (en) * 2003-10-20 2006-08-29 유니버시티오브데이턴 Ferroelectric varactors suitable for capacitive shunt switching
US7268643B2 (en) * 2004-01-28 2007-09-11 Paratek Microwave, Inc. Apparatus, system and method capable of radio frequency switching using tunable dielectric capacitors
JP4220459B2 (en) * 2004-11-22 2009-02-04 株式会社東芝 Semiconductor device
KR100949108B1 (en) 2005-06-09 2010-03-22 후지쯔 마이크로일렉트로닉스 가부시키가이샤 Semiconductor device and method for fabricating same
US7345331B1 (en) 2005-09-23 2008-03-18 United States Of America As Represented By The Secretary Of The Navy Ferroelectric capacitor circuit for sensing hydrogen gas
US8454804B2 (en) * 2005-10-28 2013-06-04 Applied Materials Inc. Protective offset sputtering
US8460519B2 (en) * 2005-10-28 2013-06-11 Applied Materials Inc. Protective offset sputtering
US7389675B1 (en) * 2006-05-12 2008-06-24 The United States Of America As Represented By The National Aeronautics And Space Administration Miniaturized metal (metal alloy)/ PdOx/SiC hydrogen and hydrocarbon gas sensors
US8247855B2 (en) * 2006-09-12 2012-08-21 Texas Instruments Incorporated Enhanced local interconnects employing ferroelectric electrodes
JP2007184623A (en) * 2007-01-22 2007-07-19 Rohm Co Ltd Dielectric capacitor
WO2008126365A1 (en) * 2007-03-29 2008-10-23 Panasonic Corporation Nonvolatile memory device, nonvolatile memory element, and nonvolatile memory element array
US7971171B2 (en) * 2007-07-03 2011-06-28 International Business Machines Corporation Method and system for electromigration analysis on signal wiring
US7922975B2 (en) * 2008-07-14 2011-04-12 University Of Dayton Resonant sensor capable of wireless interrogation
JP5347381B2 (en) * 2008-08-28 2013-11-20 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
US20100096678A1 (en) * 2008-10-20 2010-04-22 University Of Dayton Nanostructured barium strontium titanate (bst) thin-film varactors on sapphire
CN102157262B (en) * 2011-03-10 2012-09-05 苏州大学 Method for preparing capacitor with Ta205 thin film as dielectric film
US9000866B2 (en) 2012-06-26 2015-04-07 University Of Dayton Varactor shunt switches with parallel capacitor architecture
RU2550090C2 (en) * 2013-03-06 2015-05-10 Открытое Акционерное общество "Научно-исследовательский институт "Гириконд" Thin-film ferroelectric capacitor
CN113278935B (en) * 2021-05-07 2022-12-09 昆明贵研新材料科技有限公司 Platinum oxide electrode and preparation method and application thereof

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Also Published As

Publication number Publication date
DE69633554T2 (en) 2005-10-13
DE69633554D1 (en) 2004-11-11
US7057874B2 (en) 2006-06-06
US6873517B2 (en) 2005-03-29
EP1467400A3 (en) 2004-10-20
US20040036105A1 (en) 2004-02-26
JP3929513B2 (en) 2007-06-13
US20020189933A1 (en) 2002-12-19
US6454914B1 (en) 2002-09-24
KR970703049A (en) 1997-06-10
CN1085411C (en) 2002-05-22
EP0785579B1 (en) 2004-10-06
JPH0922829A (en) 1997-01-21
CA2197491C (en) 2002-01-01
US6693791B2 (en) 2004-02-17
EP0785579A4 (en) 1998-10-14
KR100385446B1 (en) 2004-09-08
US20050098819A1 (en) 2005-05-12
US7443649B2 (en) 2008-10-28
WO1997003468A1 (en) 1997-01-30
US20060170021A1 (en) 2006-08-03
CN1155943A (en) 1997-07-30
EP1467400A2 (en) 2004-10-13
EP0785579A1 (en) 1997-07-23

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