CA2178232C - Lcd with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween - Google Patents

Lcd with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween Download PDF

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Publication number
CA2178232C
CA2178232C CA002178232A CA2178232A CA2178232C CA 2178232 C CA2178232 C CA 2178232C CA 002178232 A CA002178232 A CA 002178232A CA 2178232 A CA2178232 A CA 2178232A CA 2178232 C CA2178232 C CA 2178232C
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Prior art keywords
insulating layer
address lines
pixel
layer
array
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CA002178232A
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CA2178232A1 (en
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Willem Den Boer
John Z. Z. Zhong
Tieer Gu
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OIS Optical Imaging Systems Inc
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OIS Optical Imaging Systems Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78636—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with supplementary region or layer for improving the flatness of the device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/42—Materials having a particular dielectric constant

Abstract

This invention is related to an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines. Both the manufacturability and capacitive cross-talk of the TFT-based device are improved due to the use of a photo-imageable insulating layer between the pixel electrodes and the address lines. Both the manufacturability and capacitive cross-talk of the TFT-based device are improved due to the use of a photo-imageable insulating layer between the pixel electrodes and the address lines. According to certain other embodiments, the insulating layer may be BCB (either photo-imageable or not) and/or have a dielectric constant less than about 3Ø

Description

LCD WITH BUS LINES OVERLAPPED BY PIXEL ELECTRODES
AND PHOTO-IMAO ARTF TNRTTTATTNf T~VFD mvanr..n~mrT~
This invention relates to a liquid crystal display (LCD) having an increased pixel aperture ratio. More particularly, this invention relates to a liquid crystal display including an array of TFTs wherein an insulating layer having a plurality of contact vias or apertures disposed therein is located between the address lines and pixel electrodes so that the pixel electrodes are permitted to overlap the row and column address lines without exposing the system to capacitive cross-talk. In certain embodiments, the dielectric constant of the insulating layer is less than about 3.0 to reduce cross-talk. In certain embodiments, the layer is photo-imageable.
Electronic matrix arrays find considerable application in X-ray image sensors and active matrix liquid crystal displays (AMLCDs). Such AMLCDs generally include X and Y (or row and column) address lines which are horizonta3ly and vertically spaced apart and cross at an angle to one another thereby forming a plurality of crossover points. Associated with each crossover point is an element (e. g. pixel) to be selectively addressed.
These elements, in many instances are liquid crystal display pixels or alternatively the memory cells or ~i pixels of an electronically adjustable memory array or X-ray sensor array.
Typically, a switching or isolation device such as a diode or thin film transistor (TFT) is associated with each array element or pixel. The isolation devices permit the individual pixels to be selectively addressed by the application of suitable potentials between respective pairs of the X and Y address lines. Thus, the TFTs act as switching elements for energizing or otherwise addressing corresponding pixel electrodes.
Amorphous silicon (a-Si) TFTs have found wide usage for isolation devices in liquid crystal display (LCD) arrays. Structurally, TFTs generally include substantially co-planar source and drain electrodes, a thin film semiconductor material (e. g. a-Si) disposed between the source and drain electrodes, and a gate electrode in proximity to the semiconductor but electrically insulated therefrom by a gate insulator.
Current flow through the TFT between the source and drain is controlled by the application of voltage to the gate electrode. The voltage to the gate electrode produces an electric field; which accumulates a charged region near the semiconductor-gate insulator interface. This charged region forms a current conducting channel in the semiconductor through which current is conducted. Thus, by controlling the voltage to the gate and drain electrodes, the pixels of an AMLCD may be switched on and off in a known manner.
Typically, pixel aperture ratios (i.e. pixel openings) in non-overlapping AMLCDs are only about 50% or less. As a result, either display luminance is limited or backlight power consumption is excessive, thereby precluding or limiting use in certain applications.
Thus, it is known in the art that it is desirable to increase the pixel aperture ratio or pixel opening size of LCDs to as high a value as possible so as to circumvent these problems. Tha higher the pixel aperture ratio (or pixel opening size) of a display, for example, the higher the display transmission. Thus, by increasing the pixel aperture ratio of a display, transmission may be increased using the same backlight power, or alternatively, the backlight power consumption may be reduced while maintaining the same display luminance.
It is known to overlap pixel electrodes over address lines in order to increase the pixel aperture ratio. For example, "High-Aperture TFT Array Structures" by K.
Suzuki discusses an LCD having an ITO shield plane configuration having a pixel aperture ratio of 40% and pixel electrodes which overlap signal bus lines. An ITO
pattern in Suzuki located between the pixel electrodes and the signal lines functions as a ground plane so as to reduce coupling capacitance between the signal lines and the pixel electrode. Unfortunately, it is not always desirable to have a shield electrode disposed along the length of the signal lines as in Suzuki due to production and cost considerations. The disposition of the shield layer as described by Suzuki requires extra processing steps and thus presents yield problems. Accordingly, there exists a need in the art for a LCD with an increased pixel aperture ratio which does not require an ITO shield plane structure to be disposed between the signal lines acid pixel electrode.
It is old and well-known to make TFT arrays for LCDs wherein address lines and overlapping pixel electrodes are insulated from one another by an insulating layer.
For example, see U.S. Patent Nos. 5,055,899; 5,182,620;
5,414,547; 5,426,523; 5,446,562: 5,453,857; and 5,457,553.
U.S. Patent No. 5,182,620 discloses an AM.LCD
including pixel electrodes which at least partially overlay the address lines and additional capacitor lines thereby achieving a larger numerical aperture for the display. The pixel electrodes are insulated from the address lines which they overlap by an insulating layer formed of silicon oxide or silicon nitride.
Unfortunately, the method of making this display as well as the resulting structure are less than desirable because: (i) chemical vapor deposition (CVD) is required to deposit the silicon oxide or silicon nitride insulating film; and (iij silicon oxide and silicon nitride are not photo-imageable (i.e. contact holes or vias must be formed in such insulating layers by way of etching). As a result of these two problems, the manufacturing l7rocess is both expensive and requires more steps than would be otherwise desirable. For example, in order to etch the contact holes in an insulating layer, an additional photo-resist coating step is required and the user must be concerned about layers underneath the insulating layer during etching. with respect to CVD, l0 this is a deposition process requiring expensive equipment.
U.S. Patent No. 5,453,857 discloses an AMhCD having a TFT array with pixel electrodes formed in an overlapping relation with source signal lines through an insulating thin film. The insulating thin film formed between the signal lines and the pixel electrodes is made of either SiNX, SiOz, TaOx or A1Z03. Unfortunately, the method of making the array and resulting display of the '857 patent suffers Prom the same problems discussed above with respect to the '620 patent. None of the possible insulating layer,materials are photo-imageable and etching is required.
U.S. Patent No. 5,055,899 discloses a TFT array including an insulating film disposed between the address lines and pixel electrodes. Again, etching is required to form the vias in the insulating film. This is undesirable.
___ U.S. Patent No. 5,426,523 discloses an LCD including overlapping pixel electrodes and source bus lines, with a silicon oxide insulating film disposed therebetween.
Silicon oxide is not photo-imageable and thus necessitates a prolonged and more difficult manufacturing process for the TFT array and resulting AMLCD.
It is apparent from the above that there exists a need in the art for an improved TFT array and/or resulting LCD having an increased pixel aperture ratio and little capacitive cross-talk, and a more efficient method of manufacture. The method of manufacture, which is improved relative to the prior art, should include forming a photo-imageable insulating layer between pixel electrodes and overlapped bus lines and the vies therein by way of photo-imaging as opposed to resist coating, exposure and developing, and wet or dry etching.
It is a purpose of this invention to fulfill the above-described needs in the art, as well as other needs which will become apparent to the skilled artisan Prom the following detailed description of this invention.
SUMNLARy OF THE INVENTrnN
Generally speaking, this invention fulfills the above-described needs in the art by providing a high aperture LCD comprising:
first and second substrates;
a liquid crystal layer sandwiched between the first and second substrates;
an array of thin film transistors (TFTs) disposed on the first substrate, the array of TFTs including a plurality of address lines connected to the TFTs;
an array of substantially transparent pixel electrodes disposed on the first substrate, a plurality of the pixel electrodes in the array of pixel electrodes overlapping at least one of the address lines thereby l0 increasing the pixel aperture ratio of the LCD;
a photo-imageable insulating layer disposed on the first substrate between the address lines and the pixel electrodes at least in the areas of overlap and areas adjacent source electrodes of the TFTs; and the photo-imageable insulating layer having a first group of contact vies defined therein by photo-imaging, wherein the pixel electrodes are in electrical communication with corresponding TFT source electrodes through the contact vies of the first group defined in the insulating layer.
According to certain preferred embodiments, the photo-imageable insulating layer includes one of BCB and 2-Ethoxyethyl acetate.
This invention further fulfills the above-described needs in the art by providing an LCD comprising:
a liquid crystal layer;
a substantially transparent substrate adjacent the liquid crystal layer;
an array of TFTs disposed on the substrate, the TFTs connected to address lines and acting as switching elements for energizing corresponding pixel electrodes;
a substantially transparent planarization layer i disposed on the array of transistors, the planarization layer being located between the pixel electrodes and the address lines; and wherein the planarization layer includes BCB and has a dielectric constant of less than about 3Ø
This invention still further fulfills the above-described needs in the art by providing a method of making an array of semiconductor based TFTs, the method O
comprising the~steps of:
providing a first substantially transparent substrate;
forming an array of TFTs and corresponding address lines on the substrate;
depositing an organic photo-imageable insulating layer over both the TFT array and corresponding address lines;
photo-imaging the insulating layer in order to form a first array of contact holes therein; and forming an array of electrode members on the first substrate over the photo-imaged insulating layers so that r 9 the electrode members in the array are in communication with the corresponding TFTs through the first array of contact holes.
This invention will now be described with reference to certain embodiments thereof as illustrated in the following drawings.
Figure 1 is a top view of an AMLCD according to this invention, this figure illustrating pixel electrodes overlapping surrounding row and column address lines along their respective lengths throughout the display s pixel area so as to increase the pixel aperture ratio of the display.
Figure 2 is a top view of the column (or drain) address lines and corresponding drain electrodes of Figure 1, this figure also illustrating the TFT source electrodes disposed adjacent the drain electrodes so as to define the TFT channels.
Figure 3 is a top view of the pixel electrodes of Figure 1 except for their extensions.
Figure 4 is a side elevational cross-sectional view of the linear-shaped thin film transistors (TFTs) of Figures 1-2.
Figure 5 is a side elevational cross-sectional view of the liquid crystal display of Figure 1.

~c 2178232 Figure 6 is a top or bottom view of the optional black matrix to be located on a substrata of the LCD of Figures 1-5, the black matrix to be located on the substrate not having the TFT array disposed thereon.
Figure 7 is a side cross-sectional view of a portion of the LCD of Figures 1-6, this figure illustrating the pixel electrodes overlapping the column address lines.
Figures 8-11 are side elevational cross-sectional views illustrating how a TFT in an array according to this invention is manufactured.
DETAILED DESCRIPTION OF
(!RRTATN EMSODT FNTS OF THIS INVErT'T'TON
Referring now more particularly to the accompanying drawings in which like reference numerals indicate like parts throughout the several views.
Figure 1 is a top view of four pixels in an array of an active matrix liquid crystal display (AMLCD) 2 according to an embodiment of this invention. This portion of the display includes pixel electrodes 3, drain address lines 5, gate address lines 7, an array of Pour thin film transistors (TFTS) 9, and auxiliary storage capacitors 11 associated with each pixel. Each storage capacitor 11 is defined on one side by a gate line 7 and on the other side by an independent storage capacitor electrode 12. Storage capacitor electrodes 12 are formed along with drain electrodes 13. As shown, the « N

longitudinally extending edges of each pixel electrode 3 overlap drain lines 5 and gate lines 7 respectively along the edges thereof so as to increase the pixel aperture ratio (or pixel opening size) of the LCD.
In the areas of overlap 18 between pixel electrodes 3 and address or bus lines 5, 7, a pixel-line (PL) capacitor is defined by an electrode 3 on one aide and the overlapped address line on the other. The dielectric disposed between the electrodes of these PL capacitors is insulation layer 33 (see Figures 4 and 7). The parasitic capacitance CPS of these capacitors is defined by the equation:
CPl -where "d" is the thickness of layer 33, a is the dielectric constant of layer 33, eo is the constant 8.85 x 10-4 F/cm (permitivity in vacuum), and "A" is the area of the PL capacitor in overlap areas 18. The fringing capacitance may also be taken into consideration in a known manner. See Chart 1 below for certain embodiments.
Also, according to certain other embodiments, CPS is less than or equal to about 0.01 pF for a display with a pixel pitch of about 150 wm. When the pixel pitch is smaller, CPS should be scaled to a lower value as well because overlap areas 18 are smaller. Additionally, the pixel aperture ratio of an LCD decreases as the pixel pitch decreases as is known in the art. The pixel pitch of AMLCD 2 may be from about 40 to 5,000 wm according to certain embodiments of this invention. The pixel pitch as known in the art is the distance between centers of adjacent pixels in the array.
Figure 2 is a top view of drain address lines 5 of AMLCD 2 showing how extensions of address lines 5 form drain electrodes 13 of TFTs 9. Each TFT 9 in the array of AMLCD 2 includes source electrode 15, drain electrode 13, and gate electrode 17. Gate electrode 17 of each TFT
9 is formed by the corresponding gate address line 7 adjacent the TFT according to certain embodiments.
According to other embodiments, the gate electrode 17 may be formed by a branch extending substantially perpendicular to the gate line.
Figure 3 is a top view illustrating pixel electrodes 3 (absent their extension portions 38) of AMLCD 2 arranged in array form. Figures 2 - 3 are provided so that Figure 1 may be more easily interpreted.
Figure 4 is a side elevational cross-sectional view of a single thin film transistor (TFT) 9 in the TFT array of AMLCD 2, with each TFT 9 in the array being substantially the same according to preferred embodiments. Each linear TFT 9 has a channel length "L"
defined by the gap 27 between source electrode 15 and drain electrode 13. Source electrode 15 is connected to pixel electrode 3 by way of via or contact hole 35 so as to permit TFT 9 to act as a switching element and selectively energize a corresponding pixel in AMLCD 2 in order to provide image data to a viewer. An array of TFTs 9 is provided as illustrated in Figure 1 for AMLCD
2.
Each TFT 9 structure includes substantially transparent substrate 19 (e. g. made of glass), metal gate electrode 17, gate insulating layer or film 21, semiconductor layer 23 (e. g. intrinsic amorphous silicon), doped semiconductor contact layer 25, drain electrode 13, mource electrode 15, substantially transparent insulation layer 33, and a corresponding pixel electrode 3. TFT channel 27 of length "L" is defined between source 15 and drain 13.
As shown in Figure 4, drain electrode 13 is made up of drain metal layer 29 (e.g. Mo) which is deposited on substrate 19 over top of doped contact layer 25. Contact film or layer 25 may be, for example, amorphous silicon doped with an impurity such as phosphorous (i.e. n+ a-Si) and is sandwiched between semiconductor layer 23 and drain metal layer 29. Source electrode 15 includes doped semiconductor contact layer 25 and source metal layer 31.
Metal layers 29 and 31 may be of the same metal and deposited and patterned together according to certain embodiments of this invention. Alternatively, layer 29 may be deposited and patterned separately from layer 31 so that drain metal layer is of one metal (e.g. Mo) and source metal layer 31 is of another (e. g. Cr).

Substantially transparent insulating layer 33 having a dielectric constant less than about 5.0 is deposited as a sheet on substrate 19 so as to cover TFTs 9 and address lines 5 and 7. Layer 33 is formed of a photo-imageable material such as Fuji ClearTM or a photo-imageable type of BCB. Insulating layer 33 is continuous in the viewing area of the display except Por vies or contact holes 35 and 36 formed therein to allow pixel electrodes 3 to contact corresponding TFT source electrodes and the storage capacitor electrodes respectively (i.e. each pixel includes two vies (35 and 36) in insulating layer 33 - one for the source electrode and the other for the storage capacitor).
Layer 33 has a dielectric constant a less than or equal to about 5.0 according to certain embodiments of this invention. In certain preferred embodiments, layer 33 has a dielectric constant of about 2.7 and is made of a photo-imageable type of Benzocyclobutene (BCB), an organic material available from Dow Chemical, for the purpose of reducing capacitive cross-talk (or capacitive coupling) between pixel electrodes 3 and the address lines in overlap areas 18. Layer 33 has a low dielectric constant and/or a relatively large thickness for the specific purpose of reducing CPS in overlap areas 18.
Note that the BCB may be of the non-photo-imageable type according to certain embodiments, this still reducing cross-talk.

Alternatively, layer 33 may be of a photo-imageable material known as Fuji ClearTM, which is an organic mixture including 2-Ethoxyethyl acetate (55-70%), methacrylate derivative copolymer (10-20%), and polyfunctional acrylate (10-20%).
Following,the deposition of insulation layer 33 on substrate 19 over top of TFTs 9 and address lines 5 and 7, vies 35 and 36 are formed in insulation layer 33 by way of photo-imaging. Layer 33 aets as a negative resist so that W expbsed areas remain on the substrate and areas of layer 33 unexposed to W during photo-imaging are removed during developing. Following the forming of vies 35 and 36, substantially transparent pixel electrodes 3 (made of indium-tin-oxide or ITO) are deposited and patterned over layer 33 on substrata 19 so that the pixel electrodes 3 contact the corresponding source metal layers 31 of corresponding TFTs 9 through vies 35 as illustrated in Figure 4. Auxiliary vies 36 (sea Figure 1) era formed in layer 33 at the same time as vies 35 so that pixel electrodes 3 can contact storage capacitor electrodes 12 via pixel electrode extensions 38. Peripheral lead areas and seal areas are also removed by photo-imaging.
Insulating layer 33 is deposited on substrate 19 over the address lines, storage capacitors, and TFTs to a thickness "d" of at least about 0.5 wm in overlap areas ~

18. In preferred embodiments, the thickness "d" of insulating layer 33 is from about 1 to 2.5 wm.
Another advantage of layer 33 is that liquid crystal layer disclinations induced at pixel electrode 3 edges by the topography of TFTs 9, storage capacitors, and address lines are substantially eliminated by planarization (i.e.
few, if any, hills and valleys are present in the top surface of layer 33). Thus, the thickness of the LC
layer is substantially maintained and display functionality is improved because electrodes 3 are substantially flat because of the substantial planarization of the surface of layer 33 adjacent the pixel electrodes 3.
Because of the low dielectric constant a and/or relatively high thickness "d" of layer 33, the capacitive cross-talk problems of the prior art resulting from overly high CFA values are substantially reduced in areas 18 where pixel electrodes 3 overlap address lines 5 and/or 7. Because layer 33 is disposed between pixel electrodes 3 and the overlapped address lines, the capacitive cross-talk problems of the prior art are substantially reduced or eliminated and increased pixel openings are achievable without sacrificing display performance (pixel isolation).
Pixel opening sizes or the pixel aperture ratio of AMLCD 2 is at least about 65% (preferably from about 68%
to 80%) according to certain embodiments of this invention when the pixel pitch is about 150 wm. This will, of course, vary depending upon the pixel pitch of the display (pixel pitches of from about 40 - 500 wm may be used). Pixel electrodes 3 overlap address lines 5 and 7 along the edges thereof as shown in Figure 1 by an amount up to about 3 wm. In certain preferred embodiments of this invention, the overlap 18 of electrodes 3 over the edges of address lines 5 and 7 is designed to be from about 2 to 3 wm, with the end result after overetching being at least about 0.5 wm. According to certain other embodiments of this invention, the amount of overlap may be designed to be from about 2-3 wm, with the resulting post-processing overlap being from about 0 to 2 wm. The overlap amount may be adjusted in accordance with different LCD applications and pixel pitch sizes as will be appreciated by those of skill in the art.
In certain situations, after etching and processing, pixel electrodes 3 may not overlap the address lines at all according to certain embodiments of this invention, although some overlap 18 is preferred. When no overlap occurs, the parasitic capacitance CPS between the address lines and the adjacent pixel electrode 3 is still minimized or reduced due to insulating layer 33.
Referring now to Figures 4-5 and 8-11, it will be described how AMLCD 2 including the array of TFT
structures and corresponding address lines is made according to an embodiment of this invention. Firstly, substantially transparent substrate 19 is provided.
Next, a gate metal layer or sheet (which results in gate electrodes 17 and lines 7) is deposited on the top surface (surface to be closest to the LC layer) of substrata 19 to a thickness of Prom about 1,000 - 5,000 A, most preferably to a thickness of about 2,500 ~. The gate metal sheet is deposited by way of sputtering or vapor deposition. The gate metal may be of tantalum (Ta) according to certain embodiments of this invention.
Insulating substrate 19 may be of glass, quartz, sapphire, or the like.
The structure including substrate 19 and the deposited gate metal is then patterned by photolithography to the desired gate electrode 17 and gate address line 7 configuration. The upper surface of the gate metal is exposed in a window where the photoresist has not been retained.
The gate metal (e. g. Ta) layer is then dry etched (preferably using reactive ion etching) in order to pattern the gate metal layer in accordance with the retained photoresist pattern. To do this, the structure is mounted in a known reactive ion etching (RIE) apparatus which is then purged and evacuated in accordance with known RIE procedures and etchants. This etching of the gate metal layer is preferably carried out until the gate metal is removed in center areas of the windows and is then permitted to proceed for an additional time (e.g. 20 to 40 seconds) of overetching to ensure that the gate metal is entirely removed from within the windows. The result is gate address lines 7 (and gate electrodes 17) being left on substrate 19.
After gate address lines 7 are deposited and patterned on top of substrate 19 in the above-described manner, gate insulating or dielectric layer 21 is deposited over substantially the entire substrate 19 preferably by plasma enhanced chemical vapor deposition (CVD) or some other process known to produce a high integrity dielectric. The resulting structure is shown in Figure 8. Gate insulating layer 21 is preferably silicon nitride (S13N4) but may also be silicon dioxide or other known dielectrics. silicon Nitride has a dielectric constant of about 6.4. Gate insulating layer 21 is deposited to a thickness of from about 2,000 -3,000 ~ (preferably either about 2,000 ~ or 3,000 ~) according to certain embodiments.
It is noted that after anodization (which is optional), gate Ta layer 17 which was deposited as the gate electrode and gate line layer (when originally about 2,500 ~ thick) is about 1,800 ~ thick and a newly created Ta0 layer is about 1,500 A. Anodization takes place after the gate line patterning and before further processing. Thus, gate insulating layer 21 over gate lines 7 and electrodes 17 is made up of both the anodization created Tao layer and the silicon nitride layer. Otherx.metals Prom which gate electrode 17 and address line layer 7 may be made include Cr, A1, titanium, tungsten, copper, and combinations thereof.
Next, after gate insulating layer 21 has been deposited (Figure 8), semiconductor (e.g. intrinsic a-Si) layer 23 is deposited on top of gate insulating layer 21 to a thickness of about 2,000 ~. Semiconductor layer 23 may be Prom about 1,000 ~ to 4,000 ~ thick in certain embodiments oP this invention. Then, doped (typically phosphorous doped, that is n+) amorphous silicon contact layer 25 is deposited over intrinsic a-Si layer 23 in a known manner to a thickness of, for example, about 500 Doped contact layer 25 may be Prom about 200 A to 1,000 thick according to certain embodiments oP this invention.
The result is the Figure 9 structure.
Gate insulating layer 21, semiconductor layer 23 and semiconductor contact layer 25 may all be deposited on substrate 19 in the same deposition chamber without breaking the vacuum according to certain embodiments of this invention. When this is done, the plasma discharge in the deposition chamber ie stopped after the completion of the deposition of a particular layer (e. g. insulating layer 21) until the proper gas composition for deposition of the next layer (e.g. semiconductor layer 23) is established. Subsequently, the plasma discharge is re-established to deposit the next layer (e. g. semiconductor layer 23). Alternativbly, layers 21, 23, and 25 may be deposited in different chambers by any known method.
Following the formation of the Figure 9 structure, the TFT island or area may be formed by way of etching, for example, so that the TFT metal layers can be deposited thereon. Optionally, one of the TFT metal source/drain layers may be deposited before forming the TFT island.
According to preferred embodiments, following the formation of the TFT island from the Figure 9 structure, a source-drain metal sheet or layer (which results in drain metal layer 29 and source metal layer 31) is deposited on substrate 19 over top of semiconductor layer 23 and contact layer 25. This source-drain metal layer may be chromium (Cr) or molybdenum (MO) according to certain embodiments of this invention. When chromium, the layer is deposited to a thickness of about 500 -2,000 ~, preferably about 1,000 ~ according to certain embodiments. When molybdenum, the layer is deposited to a thickness of from about 2,000 to 7,000 ~, preferably about 5,000 A. The deposited source drain metal layer sheet is then vatterned (masked and etched} to form the source, drain, and storage capacitor electrodes. After patterning of the TFT source and drain electrodes, the result is the Figure 10 TFT structure.
Alternatively, a first metal layer may be deposited and patterned to form drain electrode portion 29 and storage capacitor electrode 12, and a second metal layer may be deposited and patterned to form source electrode portion 31. Thus, for example, source metal layer 31 may be chromium (Cr) while drain metal 29 and storage capacitor electrode layer is Mo according to certain embodiments of this invention. Other metals which may be used for the source and drain metals include titanium, A1, tungsten, Tantalum, copper, or the like.
After patterning of drain and source portions 29 and 31, contact layer 25 is etched in the channel 27 area and inevitably a bit of semiconductor layer 23 is etched along with it. The result is TFT 9 with channel 27 as shown in Figures 4 and 10.
Substantially transparent polymer insulating layer 33 is then deposited onto substantially the entire substrate 19 by way of spin-coating according to certain embodiments of this invention. Layer 33 may be of either photo-imageabl~ BCB or Fuji ClearTM according to certain embodiments. Insulating layer 33 fills recesses generated upon formation of TFTs 9 and flattens the surface above substrate 19 at least about 60% according to certain embodiments. The result is the structure of Figure 11.
Photo-imageable insulating layer 33 acts as a negative resist layer according to certain embodiments of this invention so that no additional photoresist is needed to form vies 35 and 36 in layer 33. In order to form the vies, layer 33 is irradiated by ultraviolet (W) rays (e.g. i rays of 365 nm), with W irradiated areas of layer 33 to remain and non-exposed or non-radiated areas of layer 33 to be removed in developing. A mask may be used. Thus, the areas of the negative resist 33 corresponding to vies 35 and 36 are not exposed to the W
radiation, while the rest of the layer 33 across the substrate is exposed to W.
Following exposure of layer 33 (except in the via or contact hole areas), layer 33 is developed by using a known developing solution at a known concentration. In the developing stage, the areas of layer 33 corresponding to vices 35 and 36 are removed (i.e. dissolved) so as to form the vies in the insulating layer. After developing, the resist layer 33 is cured or subjected to postbaking (e.g. about 240 degrees C for about one hour) to eliminate the solvent so that the layer 33 with the vies therein is resinified. Thus, no dry or wet etching is needed to form the vices in layer 33. According to alternative embodiments, layer 33 may be a positive resist as opposed to a negative resist.
Vies or apertures 35 are thus formed in insulation layer 33 over top of (or adjacent) each source metal electrode 31 so as to permit the pixel electrodes 3 to electrically contact corresponding source electrodes 15 through vies 35. Layer 33 remains across the rest of the substrate or array except for the storage capacitor vies and certain edge areas where contacts must be made or glueing done.
After vise 35 and 36 are formed in layer 33, a substantially transparent conducting layer (e. g. ITO) which results in pixel electrodes 3 is deposited and patterned (photomasked and etched) on substrate 19 over top of layer 33. After patterning (e.g. mask and etching) of this substantially transparent conducting layer, pixel electrodes 3 are left as shown in Figures 1 and 4. As a result of vies 35 and 36 formed in layer 33, each pixel electrode 3 contacts a TFT source electrode 31 as shown in Figure 4 and a storage capacitor electrode 12 as shown in Figure 1. The result is the active plate of Figures 1 and 4 including an array of TFTs. The pixel electrode layer (when made of ITO) is deposited to a thickness of from about 1,200 to 3,000 ~ (preferably about 1,400 ~) according to certain embodiments of this invention. Other known materials may be used as pixel electrode layer 3.
2o After formation of the active plate, liquid crystal layer 45 is disposed and sealed between the active plate and the passive plate as shown in Figure 5, the passive plate including substrate 51, polarizer 53, electrode 49, and orientation film 47.
As shown in Figure 1, pixel electrodes 3 are patterned to a size so that they overlap both drain address lines 5 and gate address lines 7 along the edges thereof so as to result in ari increased pixel aperture ratio for AMhCD 2. The cross-talk problems of the prior art are substantially eliminated due to the presence of layer 33 in overlap areas 18 between pixel electrodes 3 and the address lines. Alternatively, the pixel electrodes may only overlap one group of address lines (e. g. row lineff) according to certain embodiments.
Figure 5 is a side elevational cross-sectional view of AMLCD 2 (absent the TFTs, address lines, and black l0 matrix). As sown, the twisted nematic display includes from the rear forward toward the viewer, rear polarizes 41, substantially transparent substrate 19, pixel electrodes 3, rear orientation film 43, liquid crystal layer 45, front orientation film 47, common electrode 49, front substantially transparent substrate 51, and finally front polarizes 53. Polarizers 41 and 53 may be arranged so that their transmission axes are either parallel or perpendicular to each other so as to define a normally black or normally white color AMLCD respectively.
Optionally, retarder(s) may also be provided.
Typically, a backlight is provided rearward of polarizes 41 so that light emitted therefrom first goes through polarizes 41, then through liquid crystal layer 45 and finally out of front polarizes 53 toward the viewer. Pixel electrodes 3 selectively work in conjunction with common electrode 49 so as to selectively apply voltages across liquid crystal layer 45 so as to cause an image (preferably colored according to certain embodiments) to be viewed from the front of the display.
Figure 6 illustrates an optional black matrix (BM) pattern 55 to be disposed on front substrate 51 for the purpose of overlaying address lines 5 and 7 and TFT
channels 27. When the ITO of the pixel electrodes 3 overlaps the address lines, the address lines themselves are effectively the black matrix blocking light in the interpixel areas. However, low reflectance black matrix 55 with a larger than normal opening is still useful on the top (or passive) plate in order to reduce specular reflectance and to prevent ambient light incidence on the TFT channels. Therefore, the pixel aperture ratio of the display can be made larger because the pixel electrode area is larger and the overlap between the pixel electrodes on the active plate and black matrix 55 on the passive plate can be reduced.
Black matrix structure 55 includes vertically extending regions 56 and horizontally extending regions 57. Regions 56 are aligned with drain lines 5 while regions 57 are aligned with gate lines 7 so as to prevent ambient light -from penetrating the display.
Additionally, black matrix 55 includes channel covering portions 58 which are aligned with TFT channels 27 for the purpose of preventing ambient light from reaching amorphous silicon semiconductor layer 23 through the channels. As commonly known in the art, the pixel openings 65 of the display are substantially defined by (i.e. bounded ~y) black matrix regions 56 and 57.
Figure 7 is a side elevational cross-sectional view of a portion of AMLCD 2. As shown, the central pixel electrode 3 illustrated in Figure 7 overlaps both column or drain address lines 5 by an amount "w" thereby increasing the pixel electrode size relative to that of many prior art displays. Electrodes 3 are spaced from the address lines by a distance "d". Also, black matrix portions 56 line up with address lines 5 so that the pixel aperture or opening for the center electrode 3 is defined in part by the distance between black matrix members 56. Black matrix portions 56 and address lines 5 are both arranged so that their central axes correspond with the gaps between pixel electrodes 3 according to certain embodiments of this invention. The presence of layer 33 substantially reduces the parasitic capacitance of the capacitor created between pixel electrodes 3 and address lines 5 in the overlap areas 18 as set forth above.
This invention will now be described with respect to certain examples set forth below in Chart 1.

Insulating Overlap Distance Line-Pixel Dielectric Layer 33 distance "d" CapacitanceConstant a Material "w" (fF) Example BCB 1 um 2 ~.cm 4 . 5 2 , 7 Example BCB 2 um 2 ~n 6,9 2.7 Example BCB 1 ~.cm 1 Ecm 6. 9 2 , 7 Example BCB 2 E.cm 1 E~m 11.7 2.7 Example Fuji 1 ,um 2 ~.an 7.5 4.5 ClearTM

Example Fuji 2 um 2 um 11.5 4.5 ClearTM

Example Fuj i 1 um 1 Ecm 11. 5 4 . 5 ClearTM

Example Fuji 2 ~cm I Eem 19.4 4.5 ClearTM

The values set forth above in Chart 1 are for a display wherein the side of each pixel electrode 3 which overlaps the address line is about 100 wm long. Thus, the area of overlap is about 100 wm long. Also, the 5 dielectric constants a in Chart 1 above are for insulation layer 33.
Distances "w" and "d" are shown in Figure 7, with distance "w" being the width of the overlap and distance "d" the vertical spacing between the pixel electrodes and the overlapped address lines.
Compare the values in Chart 1 with a conventional coplanar LCD in which the pixel electrodes are substantially coplanar with the address lines and spaced therefrom, such a conventional LCD having a line-pixel capacitance of about 11.8 fF (caused in part by the LC
material) when the electrodes are spaced laterally from the address lines by about 5 wm, and about 9.6 fF when the lateral spacing is about 10 wm. Thus, the high aperture LCDs of Examples 1-8 have a higher pixel t aperture ratio than conventional LCDs without suffering from substantially higher line-pixel capacitance values.
The capacitance values set forth above in Chart 1 were to arrived at from the CPS equation above in combination with taking into consideration the fringing capacitance in a known manner.
The line pixel capacitance (fF) is less than about 20 fF, preferably less than or equal to about 12 fF, and most preferably less than or equal to about 7.0 fF
according to this invention with the overlap areas and high pixel apertures.
Once given the above disclosure, many other features, modifications, and improvements will become apparent to the skilled artisan. Such other features, modifications, and improvements are, therefore, considered to be a part of this invention, the scope of which is to be determined by the following claims.

Claims (27)

1. A high aperture liquid crystal display having a plurality of pixels comprising:

first and second substrates;

a liquid crystal layer sandwiched between said first and second substrates;

an array of thin film transistors (TFTs) disposed on said first substrate, said array of TFTs including a plurality of address lines connected to said TFTs;

an array of substantially transparent pixel electrodes disposed on said first substrate, a plurality of the pixel electrodes in said array of pixel electrodes overlapping at least one of said address lines thereby increasing the pixel aperture ratio of the LCD;

a photo-imageable insulating layer disposed on said first substrate between said address lines and said pixel electrodes at least in areas of overlap between said address lines and said pixel electrodes, and areas adjacent source electrodes of the TFTs; and said photo-imageable insulating layer having a first group of contact vias defined therein by photo-imaging, wherein said pixel electrodes are in electrical communication with corresponding TFT source electrodes through said contact vias of said first group defined in said insulating layer, wherein the dielectric constant and thickness of the photo-imageable insulating layer are such that a parasitic capacitance between one of said pixel electrodes and corresponding said address lines is no greater than 0.01 pF, when the pixel pitch of the display is 150 µm.
2. The LCD of claim 1, further comprising an auxiliary storage capacitor electrode associated with each pixel electrode, and a second group of contact vias defined in said insulating layer by photo-imaging, and wherein each of said pixel electrodes is in electrical communication with a corresponding storage capacitor electrode through one of the vias in said second group of contact vias.
3. The LCD of claim 1, wherein said insulating layer is a negative resist layer.
4. The LCD of claim 1, wherein said insulating layer includes one of 2-Ethoxyethyl acetate and Benzocyclobutene (BCB).
5. The LCD of claim 1. wherein the dielectric constant .EPSILON. of said insulating layer is less than 3.0
6. The LCD of claim 1, wherein said insulating layer includes an organic mixture of 2-Ethoxyethyl acetate, methacrylate derivative copolymer, and polyfunctional acrylate.
7. The LCD of claim 1, wherein said insulating layer is 2 to 3 µm thick.
8. The LCD of claim 1, wherein said insulating layer covers substantially an entire viewing area of the display except for contact vias formed therein.
9. The LCD of claim 1, wherein the pixel aperture ratio of the LCD is at least 68%.
10. The LCD of claim 1, wherein the areas of overlap each have an overlap width in the range of 0 to 2 µm and the address line-pixel capacitance is less than 12.0 fF when an overlap length of the areas of overlap is 100 µm.
11. The LCD of claim 10, wherein the capacitance is less than 8.0 fF.
12. A TFT array structure comprising:

an array of TFTs on a substrate, said TFTs being connected to a corresponding array of pixel electrodes;

row and column address lines on said substrate for addressing said TFTs; and photo-imageable insulating means disposed between (i) said pixel electrodes;
and (ii) said address lines so as to reduce crosstalk with a parasitic capacitance between one of said pixel electrodes and corresponding said address lines that is less than 0.01 pF and permit said means to be photo-imaged.
13. A liquid crystal display with a high pixel aperture ratio comprising:

a liquid crystal layer sandwiched between first and second substrates;

an array of thin film transistors, corresponding storage capacitors and corresponding pixel electrodes on said first substrate, each of said thin film transistors including a semiconductor layer, a gate electrode connected to a gate address line, a drain electrode connected to a drain address line, and a source electrode connected to one of said corresponding pixel electrodes, and wherein said pixel electrode connected to said source electrode overlaps said gate and drain address lines along longitudinal edges thereof and each of said storage capacitors includes a via or contact hole that electrically connects said pixel electrode with a conductive layer; and a substantially continuous insulating layer having a dielectric constant ..epsilon.. no greater than 3.0 disposed between said pixel electrode and said address lines.
14. The liquid crystal display of claim 13, wherein CPL is defined by the equation:

CPL=..epsilon...cndot...epsilon..o.cndot.A/d where .epsilon..o is 8.85 × 10-14 F/cm, "d" is the insulating layer thickness in areas of overlap of said pixel electrode and said address lines, and "A" is the area of the capacitor formed between said pixel electrode and said address lines in the areas of overlap; and wherein C
PL is less than or equal to 0.01 pF when the pixel pitch of the display is 150 µm so as to reduce cross-talk in the display.
15. The liquid crystal display of claim 13, wherein the insulating layer thickness "d" is at least 1.5 µm in areas of overlap of said pixel electrode and said address lines.
16. The liquid crystal display of claim 15, wherein "d" is in the range of 2 to 3 µm in the areas of overlap-and said insulating layer has a degree of planarization of at least 90%.
17. The liquid crystal display of claim 15, wherein the display has a pixel aperture ratio of at least 65%, and a pixel pitch in the range of 40 to 500 µm.
18. The liquid crystal display of claim 13, wherein said insulating layer includes Benzocyclobutene (BCB) and has a dielectric constant .epsilon. of 2.7 or less.
19. A liquid crystal display having a plurality of pixels comprising:

a liquid crystal layer;

a substantially transparent substrate adjacent said liquid crystal layer;

an array of thin film transistors disposed on said substrate, said thin film transistors connected to address lines and acting as switching elements for energizing corresponding pixel electrodes;

a substantially transparent planarization layer disposed on said array of transistors, said planarization layer being located between (i) said pixel electrodes; and (ii) said address lines; and wherein said planarization layer includes Benzocyclobutene (BCB) and has a dielectric constant of less than 3.0 and a parasitic capacitance between one of said pixel electrodes and corresponding said address lines is less than 0.01 pF, when the pixel pitch of the display is 150 µ m.
20. A method of making an array of semiconductor based thin film transistors (TFTs), the method comprising the steps of:

providing a first substantially transparent substrate;

forming an array of TFTs and corresponding address lines on the first substrate;

depositing an organic photo-imageable insulating layer over both the TFT array and corresponding address lines;

photo-imaging the insulating layer in order to form a first array of vias or contact holes therein; and forming an array of electrode members on the first substrate over the insulating layer so that the electrode members in the array are in communication with the corresponding TFTs through the first array of vias or contact holes, wherein the dielectric constant and thickness of the insulating layer are such that a parasitic capacitance between one of the array of electrode members and the corresponding address lines is no greater than 0.01 pF.
21. The method of claim 20, further comprising the step of overlapping the address lines with the electrode members so that the insulating layer, following the photo-imaging step, is disposed therebetween so as to reduce cross-talk.
22. The method of claim 21, further comprising the steps of (i) using the TFT
array in one of a liquid crystal display and an image sensor, and (ii) forming the insulating layer so as to include one of photo-imageable BCB and 2-Ethoxyethyl acetate.
23. The display of claim 19, wherein the planarization layer is non-photo-imageable.
24. The liquid crystal display of claim 13, wherein the conductive layer is a metal layer.
25. The liquid crystal display of claim 24, wherein the metal layer is formed at the same time as the gate address lines.
26. The liquid crystal display of claim 24, wherein the metal layer is formed at the same time as the drain address lines.
27. The liquid crystal display of claim 13, wherein the insulating layer is photo-imageable.
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Publication number Priority date Publication date Assignee Title
JPH07302912A (en) 1994-04-29 1995-11-14 Semiconductor Energy Lab Co Ltd Semiconductor device
US5814529A (en) 1995-01-17 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
JPH0926603A (en) 1995-05-08 1997-01-28 Semiconductor Energy Lab Co Ltd Display device
JP3315834B2 (en) * 1995-05-31 2002-08-19 富士通株式会社 Thin film transistor matrix device and method of manufacturing the same
US5641974A (en) 1995-06-06 1997-06-24 Ois Optical Imaging Systems, Inc. LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween
US5994721A (en) 1995-06-06 1999-11-30 Ois Optical Imaging Systems, Inc. High aperture LCD with insulating color filters overlapping bus lines on active substrate
US6124606A (en) * 1995-06-06 2000-09-26 Ois Optical Imaging Systems, Inc. Method of making a large area imager with improved signal-to-noise ratio
JP3866783B2 (en) * 1995-07-25 2007-01-10 株式会社 日立ディスプレイズ Liquid crystal display
KR970011972A (en) * 1995-08-11 1997-03-29 쯔지 하루오 Transmission type liquid crystal display device and manufacturing method thereof
KR100225098B1 (en) 1996-07-02 1999-10-15 구자홍 Method of fabrication of thin transistor
JP3604106B2 (en) * 1995-09-27 2004-12-22 シャープ株式会社 Liquid crystal display
JP3299869B2 (en) * 1995-09-27 2002-07-08 シャープ株式会社 Liquid crystal display device and manufacturing method thereof
JP3027541B2 (en) * 1995-09-27 2000-04-04 シャープ株式会社 Liquid crystal display
JP3418653B2 (en) 1995-09-28 2003-06-23 シャープ株式会社 Active matrix type liquid crystal display
JP3646999B2 (en) 1995-09-28 2005-05-11 シャープ株式会社 Transmission type liquid crystal display device
JPH09236826A (en) * 1995-09-28 1997-09-09 Sharp Corp Liquid crystal display element and its production
JPH0990397A (en) * 1995-09-28 1997-04-04 Sharp Corp Active matrix substrate and display device formed by using the same
JPH0990337A (en) * 1995-09-28 1997-04-04 Sharp Corp Transmission type liquid crystal display device
JP3272212B2 (en) * 1995-09-29 2002-04-08 シャープ株式会社 Transmissive liquid crystal display device and method of manufacturing the same
JP3458562B2 (en) 1995-10-12 2003-10-20 株式会社日立製作所 Liquid crystal display device and manufacturing method thereof
JPH09113931A (en) * 1995-10-16 1997-05-02 Sharp Corp Liquid crystal display device
KR100283733B1 (en) * 1995-10-16 2001-03-02 마찌다 가쯔히꼬 Active matrix liquid crystal display and its disconnection correction method
JP3209317B2 (en) * 1995-10-31 2001-09-17 シャープ株式会社 Transmissive liquid crystal display device and method of manufacturing the same
JP3187306B2 (en) * 1995-10-31 2001-07-11 シャープ株式会社 Transmissive liquid crystal display
TWI228625B (en) * 1995-11-17 2005-03-01 Semiconductor Energy Lab Display device
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
TW409194B (en) * 1995-11-28 2000-10-21 Sharp Kk Active matrix substrate and liquid crystal display apparatus and method for producing the same
TW309633B (en) 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
US6225218B1 (en) 1995-12-20 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3167605B2 (en) * 1995-12-25 2001-05-21 シャープ株式会社 Liquid crystal display device
US5852485A (en) * 1996-02-27 1998-12-22 Sharp Kabushiki Kaisha Liquid crystal display device and method for producing the same
KR100190023B1 (en) * 1996-02-29 1999-06-01 윤종용 Tft-lcd and fabrication method thereof
JP3205501B2 (en) * 1996-03-12 2001-09-04 シャープ株式会社 Active matrix display device and repair method thereof
JP3332773B2 (en) * 1996-03-15 2002-10-07 シャープ株式会社 Active matrix substrate and method of manufacturing active matrix substrate
DE19712233C2 (en) * 1996-03-26 2003-12-11 Lg Philips Lcd Co Liquid crystal display and manufacturing method therefor
KR100244450B1 (en) * 1996-08-30 2000-02-01 구본준 Substrate manufacturing method of liquid crystal display device and substrate
JPH09258247A (en) * 1996-03-26 1997-10-03 Sharp Corp Production of liquid crystal display device and film forming device
US6211928B1 (en) 1996-03-26 2001-04-03 Lg Electronics Inc. Liquid crystal display and method for manufacturing the same
US6001539A (en) * 1996-04-08 1999-12-14 Lg Electronics, Inc. Method for manufacturing liquid crystal display
JPH09281508A (en) 1996-04-12 1997-10-31 Semiconductor Energy Lab Co Ltd Liquid crystal display device and its manufacture
US5866919A (en) * 1996-04-16 1999-02-02 Lg Electronics, Inc. TFT array having planarized light shielding element
JP3297591B2 (en) * 1996-04-17 2002-07-02 シャープ株式会社 Method for manufacturing active matrix substrate and liquid crystal display device
JP3256730B2 (en) * 1996-04-22 2002-02-12 シャープ株式会社 Liquid crystal display device and driving method thereof
KR100209277B1 (en) * 1996-04-25 1999-07-15 구자홍 Tft array substrate and its manufactuaring method
JP3304272B2 (en) 1996-05-09 2002-07-22 シャープ株式会社 Active matrix substrate and method for treating structural defect thereof
US5909260A (en) * 1996-05-24 1999-06-01 Tektronix, Inc. Plasma addressed liquid crystal display panel with reduced data drive electrode capacitance
JP3317387B2 (en) * 1996-06-03 2002-08-26 シャープ株式会社 Active matrix substrate and manufacturing method thereof
JP3396130B2 (en) * 1996-06-03 2003-04-14 シャープ株式会社 Liquid crystal display
TW384409B (en) * 1996-06-04 2000-03-11 Sharp Kk Liquid crystal display device
US5721163A (en) * 1996-06-10 1998-02-24 Chartered Semiconductor Manufacturing Pte, Ltd. Method of manufacture of thin film transistor SRAM device with a titanium nitride or silicide gate
US6746905B1 (en) 1996-06-20 2004-06-08 Kabushiki Kaisha Toshiba Thin film transistor and manufacturing process therefor
JP3640224B2 (en) * 1996-06-25 2005-04-20 株式会社半導体エネルギー研究所 LCD panel
JP3126661B2 (en) 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 Liquid crystal display
US7298447B1 (en) 1996-06-25 2007-11-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display panel
JPH1020331A (en) * 1996-06-28 1998-01-23 Sharp Corp Liquid crystal display device
JP3312101B2 (en) * 1996-07-02 2002-08-05 シャープ株式会社 Liquid crystal display
JPH1020298A (en) * 1996-07-03 1998-01-23 Sharp Corp Liquid crystal display device
US6188452B1 (en) 1996-07-09 2001-02-13 Lg Electronics, Inc Active matrix liquid crystal display and method of manufacturing same
KR100213968B1 (en) * 1996-07-15 1999-08-02 구자홍 Liquid crystal display device
JPH1039333A (en) 1996-07-19 1998-02-13 Sharp Corp Active matrix type liquid crystal display device and method for correcting its defect
US6025605A (en) * 1996-07-26 2000-02-15 Lg Electronics Inc. Aligned semiconductor structure
US6746959B2 (en) 1996-07-26 2004-06-08 Lg Philips Lcd Co., Ltd. Liquid crystal display and method
TW373114B (en) 1996-08-05 1999-11-01 Sharp Kk Liquid crystal display device
JP3634089B2 (en) * 1996-09-04 2005-03-30 株式会社半導体エネルギー研究所 Display device
JPH10111518A (en) * 1996-10-04 1998-04-28 Sharp Corp Active matrix substrate and its production
KR100247493B1 (en) * 1996-10-18 2000-03-15 구본준, 론 위라하디락사 Structure of active matrix substrate
GB2318448B (en) * 1996-10-18 2002-01-16 Simage Oy Imaging detector and method of production
JP3725266B2 (en) 1996-11-07 2005-12-07 株式会社半導体エネルギー研究所 Wiring formation method
JP3454340B2 (en) * 1996-11-22 2003-10-06 シャープ株式会社 Liquid crystal display
CN1148600C (en) * 1996-11-26 2004-05-05 三星电子株式会社 Liquid crystal display using organic insulating material and manufacturing methods thereof
US6940566B1 (en) * 1996-11-26 2005-09-06 Samsung Electronics Co., Ltd. Liquid crystal displays including organic passivation layer contacting a portion of the semiconductor layer between source and drain regions
KR100232679B1 (en) 1996-11-27 1999-12-01 구본준 Fabrication method of lcd and its structure
KR100251091B1 (en) * 1996-11-29 2000-04-15 구본준 Method of manufacturing liquid crystal display device and liquid crystal display device
JP3392672B2 (en) * 1996-11-29 2003-03-31 三洋電機株式会社 Display device
TW542933B (en) * 1996-12-19 2003-07-21 Sharp Kk Liquid crystal display device and process for producing the same
JP3420675B2 (en) * 1996-12-26 2003-06-30 シャープ株式会社 Liquid crystal display device and method of manufacturing the same
KR100226494B1 (en) * 1997-02-20 1999-10-15 김영환 Lcd apparatus and mufacturing method
JPH10239698A (en) * 1997-02-25 1998-09-11 Sharp Corp Liquid crystal display device
KR100255592B1 (en) * 1997-03-19 2000-05-01 구본준 The structure and manufacturing method of lcd
US5796121A (en) * 1997-03-25 1998-08-18 International Business Machines Corporation Thin film transistors fabricated on plastic substrates
US6226061B1 (en) 1997-03-25 2001-05-01 Sharp Kabushiki Kaisha Liquid crystal display device having phase different plates
KR100569729B1 (en) * 1997-04-07 2006-08-10 삼성전자주식회사 Thin film transistor liquid crystal display device substrate using molybdenum tungsten alloy as the source and drain metal and method for manufacturing same
JP3656076B2 (en) 1997-04-18 2005-06-02 シャープ株式会社 Display device
JP3269787B2 (en) * 1997-05-27 2002-04-02 シャープ株式会社 Liquid crystal display
JP3966614B2 (en) 1997-05-29 2007-08-29 三星電子株式会社 Wide viewing angle LCD
US6774966B1 (en) 1997-06-10 2004-08-10 Lg.Philips Lcd Co., Ltd. Liquid crystal display with wide viewing angle and method for making it
JP3375117B2 (en) 1997-06-11 2003-02-10 シャープ株式会社 Semiconductor device, manufacturing method thereof, and liquid crystal display device
JPH112835A (en) * 1997-06-13 1999-01-06 Sharp Corp Active matrix substrate
JPH1117188A (en) * 1997-06-23 1999-01-22 Sharp Corp Active matrix substrate
US5920080A (en) * 1997-06-23 1999-07-06 Fed Corporation Emissive display using organic light emitting diodes
JP3520396B2 (en) 1997-07-02 2004-04-19 セイコーエプソン株式会社 Active matrix substrate and display device
US6380672B1 (en) * 1997-08-21 2002-04-30 Seiko Epson Corporation Active matrix display device
JP3580092B2 (en) * 1997-08-21 2004-10-20 セイコーエプソン株式会社 Active matrix display
KR100271037B1 (en) * 1997-09-05 2000-11-01 구본준, 론 위라하디락사 Structure and fabrication method of lcd
JPH11111991A (en) 1997-09-30 1999-04-23 Sanyo Electric Co Ltd Thin-film transistor and method of manufacturing the thin-film transistor
JP3599972B2 (en) 1997-09-30 2004-12-08 三洋電機株式会社 Method for manufacturing thin film transistor
JPH11111994A (en) * 1997-10-03 1999-04-23 Sanyo Electric Co Ltd Thin-film transistor and method for manufacturing the thin-film transistor
JP3830115B2 (en) 1997-10-06 2006-10-04 シャープ株式会社 Liquid crystal display element
JP3386701B2 (en) * 1997-10-17 2003-03-17 シャープ株式会社 Reflective liquid crystal display
US6359672B2 (en) 1997-10-20 2002-03-19 Guardian Industries Corp. Method of making an LCD or X-ray imaging device with first and second insulating layers
US6011274A (en) * 1997-10-20 2000-01-04 Ois Optical Imaging Systems, Inc. X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetween
JP4049422B2 (en) * 1997-11-18 2008-02-20 三洋電機株式会社 Manufacturing method of liquid crystal display device
US6025599A (en) * 1997-12-09 2000-02-15 Direct Radiography Corp. Image capture element
US6433841B1 (en) 1997-12-19 2002-08-13 Seiko Epson Corporation Electro-optical apparatus having faces holding electro-optical material in between flattened by using concave recess, manufacturing method thereof, and electronic device using same
JP3786515B2 (en) * 1998-01-30 2006-06-14 セイコーエプソン株式会社 Liquid crystal device, method for manufacturing the same, and electronic device
KR100488934B1 (en) * 1997-12-22 2005-08-31 비오이 하이디스 테크놀로지 주식회사 Ultra high opening rate liquid crystal display device and its manufacturing method
JP3973787B2 (en) * 1997-12-31 2007-09-12 三星電子株式会社 Liquid crystal display device and manufacturing method thereof
US6020590A (en) * 1998-01-22 2000-02-01 Ois Optical Imaging Systems, Inc. Large area imager with UV blocking layer
US5994157A (en) * 1998-01-22 1999-11-30 Ois Optical Imaging Systems, Inc. Method of making a large area imager with UV Blocking layer, and corresponding imager
US6060714A (en) * 1998-01-23 2000-05-09 Ois Optical Imaging Systems, Inc. Large area imager with photo-imageable interface barrier layer
US6229192B1 (en) 1998-01-27 2001-05-08 Ois Optical Imaging Systems, Inc. Image sensor or LCD including switching pin diodes
US6180529B1 (en) 1998-01-27 2001-01-30 Ois Optical Imaging Systems, Inc. Method of making an image sensor or LCD including switching pin diodes
TW556013B (en) 1998-01-30 2003-10-01 Seiko Epson Corp Electro-optical apparatus, method of producing the same and electronic apparatus
TW542932B (en) * 1998-02-09 2003-07-21 Seiko Epson Corp Liquid crystal panel and electronic appliances
US6157426A (en) * 1998-02-13 2000-12-05 Ois Optical Imaging Systems, Inc. Liquid crystal display with SiOx Ny inclusive multilayer black matrix
EP0985228A1 (en) * 1998-03-02 2000-03-15 Koninklijke Philips Electronics N.V. Semiconductor device comprising a glass supporting body onto which a substrate with semiconductor elements and a metallization is attached by means of an adhesive
JPH11258572A (en) * 1998-03-10 1999-09-24 Matsushita Electric Ind Co Ltd Active matrix type liquid crystal display
US6008872A (en) * 1998-03-13 1999-12-28 Ois Optical Imaging Systems, Inc. High aperture liquid crystal display including thin film diodes, and method of making same
US6704133B2 (en) 1998-03-18 2004-03-09 E-Ink Corporation Electro-optic display overlays and systems for addressing such displays
US7075502B1 (en) 1998-04-10 2006-07-11 E Ink Corporation Full color reflective display with multichromatic sub-pixels
JP4651193B2 (en) 1998-05-12 2011-03-16 イー インク コーポレイション Microencapsulated electrophoretic electrostatically addressed media for drawing device applications
US5917199A (en) 1998-05-15 1999-06-29 Ois Optical Imaging Systems, Inc. Solid state imager including TFTS with variably doped contact layer system for reducing TFT leakage current and increasing mobility and method of making same
US6335776B1 (en) 1998-05-30 2002-01-01 Lg. Philips Lcd Co., Ltd. Multi-domain liquid crystal display device having an auxiliary electrode formed on the same layer as the pixel electrode
JP4180690B2 (en) * 1998-06-05 2008-11-12 東芝松下ディスプレイテクノロジー株式会社 Liquid crystal display
JP4364332B2 (en) * 1998-06-23 2009-11-18 シャープ株式会社 Liquid crystal display
US6194727B1 (en) 1998-07-06 2001-02-27 Direct Radiography Corp. Direct radiographic imaging panel having a dielectric layer with an adjusted time constant
KR100357213B1 (en) 1998-07-23 2002-10-18 엘지.필립스 엘시디 주식회사 Multi-domain liquid crystal display device
AU9247398A (en) 1998-08-06 2000-02-28 Victor A. Konovalov Liquid-cristal display and the method of its fabrication
JP4386978B2 (en) * 1998-08-07 2009-12-16 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6246070B1 (en) * 1998-08-21 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
KR100542303B1 (en) * 1998-08-24 2006-04-06 비오이 하이디스 테크놀로지 주식회사 Liquid crystal display
EP1235101A3 (en) * 1998-09-03 2008-08-20 Toshiba Matsushita Display Technology Co., Ltd. Liquid crystal display device, method for manufacturing the same, and method for driving a liquid crystal display device
US6924781B1 (en) * 1998-09-11 2005-08-02 Visible Tech-Knowledgy, Inc. Smart electronic label employing electronic ink
US20020167500A1 (en) * 1998-09-11 2002-11-14 Visible Techknowledgy, Llc Smart electronic label employing electronic ink
JP3125872B2 (en) * 1998-09-14 2001-01-22 日本電気株式会社 Active matrix type liquid crystal display
US6654090B1 (en) 1998-09-18 2003-11-25 Lg. Philips Lcd Co., Ltd. Multi-domain liquid crystal display device and method of manufacturing thereof
TW559683B (en) * 1998-09-21 2003-11-01 Advanced Display Kk Liquid display device and manufacturing process therefor
GB2367374B (en) * 1998-10-19 2003-05-28 Lg Philips Lcd Co Ltd A multi-domain liquid crystal display device
US6525794B1 (en) 1998-10-19 2003-02-25 Lg. Philips Lcd Co., Ltd. Multi-domain liquid crystal display device having a dielectric frame controlling alignment of the liquid crystal molecules
KR100313949B1 (en) 1998-11-11 2002-09-17 엘지.필립스 엘시디 주식회사 Multi-domain Liquid Crystal Display Device
FR2784758B1 (en) * 1998-10-19 2006-01-27 Lg Philips Lcd Co Ltd A MULTI-DOMAIN LIQUID CRYSTAL DISPLAY DEVICE
KR100303446B1 (en) * 1998-10-29 2002-10-04 삼성전자 주식회사 Manufacturing method of thin film transistor substrate for liquid crystal display device
US6310594B1 (en) 1998-11-04 2001-10-30 International Business Machines Corporation Driving method and circuit for pixel multiplexing circuits
US6414665B2 (en) 1998-11-04 2002-07-02 International Business Machines Corporation Multiplexing pixel circuits
US6476787B1 (en) 1998-11-04 2002-11-05 International Business Machines Corporation Multiplexing pixel circuits
GB9825314D0 (en) 1998-11-20 1999-01-13 Koninkl Philips Electronics Nv Active matrix liquid crystal display devices
US6900869B1 (en) 1998-11-25 2005-05-31 Lg. Philips Lcd Co., Ltd. Multi-domain liquid crystal display device with particular dielectric structures
GB9825868D0 (en) 1998-11-27 1999-01-20 Koninkl Philips Electronics Nv Active matrix liquid crystal display devices
US6809787B1 (en) 1998-12-11 2004-10-26 Lg.Philips Lcd Co., Ltd. Multi-domain liquid crystal display device
US6335781B2 (en) * 1998-12-17 2002-01-01 Lg Electronics, Inc. Method for manufacturing an LCD in which a photoresist layer is at least 1.2 times thicker than the passivation layer
GB9827988D0 (en) 1998-12-19 1999-02-10 Koninkl Philips Electronics Nv Active matrix liquid crystal display devices
KR100430232B1 (en) * 1998-12-21 2004-12-31 엘지.필립스 엘시디 주식회사 Accumulation Capacitor for Liquid Crystal Display and Liquid Crystal Display
JP2000193938A (en) * 1998-12-28 2000-07-14 Fujitsu Ltd Driving method for liquid crystal display device
KR100336895B1 (en) * 1998-12-30 2003-06-09 주식회사 현대 디스플레이 테크놀로지 High opening and high transmittance liquid crystal display device and manufacturing method thereof
EP1018768A1 (en) 1999-01-05 2000-07-12 Direct Radiography Corp. Image capture element
KR100339332B1 (en) 1999-02-08 2002-06-03 구본준, 론 위라하디락사 Multi-domain liquid crystal display device
US6791647B1 (en) 1999-02-24 2004-09-14 Lg Philips Lcd Co., Ltd. Multi-domain liquid crystal display device
KR100357216B1 (en) 1999-03-09 2002-10-18 엘지.필립스 엘시디 주식회사 Multi-domain liquid crystal display device
JP3763381B2 (en) * 1999-03-10 2006-04-05 シャープ株式会社 Manufacturing method of liquid crystal display device
US7202924B1 (en) * 1999-03-17 2007-04-10 Lg.Philips Lcd Co., Ltd Liquid crystal display and a fabricating method thereof
US6475836B1 (en) * 1999-03-29 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100308161B1 (en) 1999-05-07 2001-09-26 구본준, 론 위라하디락사 Multi-domain liquid crystal display device
US6445003B1 (en) * 1999-05-11 2002-09-03 Lg.Philips Lcd Co., Ltd. Thin film transistor (TFT) type optical detecting sensor
US6204081B1 (en) * 1999-05-20 2001-03-20 Lg Lcd, Inc. Method for manufacturing a substrate of a liquid crystal display device
GB9915572D0 (en) 1999-07-02 1999-09-01 Koninkl Philips Electronics Nv Active matrix liquid crystal display devices
EP1067605A1 (en) * 1999-07-05 2001-01-10 STMicroelectronics S.r.l. Ferroelectric memory cell and corresponding manufacturing method
JP4744757B2 (en) * 1999-07-21 2011-08-10 イー インク コーポレイション Use of storage capacitors to enhance the performance of active matrix driven electronic displays.
CN1156729C (en) * 1999-07-29 2004-07-07 松下电器产业株式会社 Liquid crystal display device and method for manufacturing the same
KR100627107B1 (en) 1999-07-31 2006-09-25 엘지.필립스 엘시디 주식회사 Multi-Domain Liquid Crystal Display Device and Method of Fabricating the same
JP3910341B2 (en) * 1999-08-04 2007-04-25 シャープ株式会社 2D image detector
US6362028B1 (en) * 1999-08-19 2002-03-26 Industrial Technology Research Institute Method for fabricating TFT array and devices formed
KR100313245B1 (en) * 1999-08-25 2001-11-07 구본준, 론 위라하디락사 Liquid Crystal Display Device with Repair Function
EP1208603A1 (en) * 1999-08-31 2002-05-29 E Ink Corporation Transistor for an electronically driven display
KR100498630B1 (en) 1999-09-01 2005-07-01 엘지.필립스 엘시디 주식회사 Liquid crystal display
WO2001018597A1 (en) 1999-09-07 2001-03-15 Hitachi, Ltd Liquid crystal display device
KR100326881B1 (en) * 1999-10-15 2002-03-13 구본준, 론 위라하디락사 Liquid Crystal Display Device And Method Of Fabricating The Same
KR100628681B1 (en) * 1999-10-28 2006-09-28 엘지.필립스 엘시디 주식회사 Liguid crystal Display Device and the same method
US6639641B1 (en) 1999-11-25 2003-10-28 Lg.Philips Lcd Co., Ltd. Multi-domain liquid crystal display device
KR100632216B1 (en) * 1999-12-16 2006-10-09 엘지.필립스 엘시디 주식회사 Array substrate for liquid crystal display device and manufacturing method thereof
EP2271093A1 (en) * 2000-01-14 2011-01-05 NDS Limited Advertisements detection in an end-user controlled playback environment
JP3665263B2 (en) * 2000-01-18 2005-06-29 シャープ株式会社 Liquid crystal display
US6359671B1 (en) 2000-02-23 2002-03-19 Planar Systems, Inc. High contrast liquid crystal device
KR100685312B1 (en) 2000-02-25 2007-02-22 엘지.필립스 엘시디 주식회사 Liquid Crystal Display Panel and Fabricating Method Thereof
JP3596471B2 (en) * 2000-03-27 2004-12-02 セイコーエプソン株式会社 Electro-optical device, method for manufacturing the same, and electronic apparatus
KR100586240B1 (en) 2000-05-18 2006-06-02 엘지.필립스 엘시디 주식회사 Method for fabricating the array substrate for LCD and the same
US6525796B2 (en) * 2000-06-20 2003-02-25 Kabushiki Kaisha Toshiba Liquid-crystal display device
KR100595295B1 (en) 2000-06-27 2006-07-03 엘지.필립스 엘시디 주식회사 Multi domain liquide crystal display device and method for fabricating the same
KR100595296B1 (en) 2000-06-27 2006-07-03 엘지.필립스 엘시디 주식회사 Muti domain liquid crystal display device and method for fabricating the same
JP3696055B2 (en) 2000-06-27 2005-09-14 シャープ株式会社 Manufacturing method of semiconductor device
US7072017B1 (en) 2000-06-29 2006-07-04 Lg. Philips Lcd Co., Ltd. Multi-domain liquid crystal display device having a common-auxiliary electrode and dielectric structures
JP2002040480A (en) * 2000-07-24 2002-02-06 Matsushita Electric Ind Co Ltd Liquid crystal display device
KR100628257B1 (en) * 2000-10-20 2006-09-27 엘지.필립스 엘시디 주식회사 The Structure of the reflective type and the semi-transparent type Liquid Crystal Display device
GB0028877D0 (en) * 2000-11-28 2001-01-10 Koninkl Philips Electronics Nv Liquid crystal displays
US6511869B2 (en) 2000-12-05 2003-01-28 International Business Machines Corporation Thin film transistors with self-aligned transparent pixel electrode
TW471181B (en) * 2000-12-27 2002-01-01 Ind Tech Res Inst Manufacturing method of wide view angle flat panel display cell
KR100776509B1 (en) * 2000-12-30 2007-11-16 엘지.필립스 엘시디 주식회사 Liquid Crystal Display Device and Fabricating Method Thereof
US6825496B2 (en) 2001-01-17 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
KR100771516B1 (en) * 2001-01-20 2007-10-30 삼성전자주식회사 Thin film transistor liquid crystal display
GB0102167D0 (en) * 2001-01-27 2001-03-14 Koninl Philips Electronics Nv Pixellated devices such as active matrix liquid crystal displys and methods of manufacturing such
US6853411B2 (en) * 2001-02-20 2005-02-08 Eastman Kodak Company Light-producing high aperture ratio display having aligned tiles
US7095460B2 (en) * 2001-02-26 2006-08-22 Samsung Electronics Co., Ltd. Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
US7071037B2 (en) * 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TW458288U (en) * 2001-03-08 2001-10-01 Liau Guo Fu X-ray image sensor
JP3841198B2 (en) * 2001-03-13 2006-11-01 日本電気株式会社 Active matrix substrate and manufacturing method thereof
JP3884625B2 (en) * 2001-03-14 2007-02-21 シャープ株式会社 Liquid crystal display device and defect repair method thereof
US6847039B2 (en) * 2001-03-28 2005-01-25 Canon Kabushiki Kaisha Photodetecting device, radiation detecting device, and radiation imaging system
US6492620B1 (en) * 2001-05-18 2002-12-10 Trw Inc. Equipotential fault tolerant integrated circuit heater
KR100620847B1 (en) * 2001-06-05 2006-09-13 엘지.필립스 엘시디 주식회사 Array Substrate of Liquid Crystal Display and Fabricating Method Thereof
KR100807582B1 (en) * 2001-07-30 2008-02-28 엘지.필립스 엘시디 주식회사 Storage capacitor and liquid crystal display device having the same
TWI291072B (en) * 2001-09-28 2007-12-11 Sanyo Electric Co Liquid crystal display unit
US7202847B2 (en) 2002-06-28 2007-04-10 E Ink Corporation Voltage modulated driver circuits for electro-optic displays
US6885032B2 (en) * 2001-11-21 2005-04-26 Visible Tech-Knowledgy, Inc. Display assembly having flexible transistors on a flexible substrate
AU2002350253A1 (en) * 2001-11-21 2003-06-10 Visible Tech-Knowledgy, Inc. Active matrix thin film transistor array backplane
KR100475108B1 (en) * 2001-12-22 2005-03-10 엘지.필립스 엘시디 주식회사 Liquid Crystal Display Device and method for manufacturing the same
KR100870660B1 (en) * 2001-12-31 2008-11-26 엘지디스플레이 주식회사 A liuquid crystal display device having improved attachment of pannel and a method of fabricating thereof
GB2385132A (en) * 2002-02-12 2003-08-13 Seiko Epson Corp A capacitance sensor
TW200304227A (en) * 2002-03-11 2003-09-16 Sanyo Electric Co Top gate type thin film transistor
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (en) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 Semiconductor display device
JP3989763B2 (en) * 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 Semiconductor display device
JP4463493B2 (en) 2002-04-15 2010-05-19 株式会社半導体エネルギー研究所 Display device and manufacturing method thereof
US7242021B2 (en) * 2002-04-23 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display element using semiconductor device
US7223672B2 (en) * 2002-04-24 2007-05-29 E Ink Corporation Processes for forming backplanes for electro-optic displays
TWI272556B (en) 2002-05-13 2007-02-01 Semiconductor Energy Lab Display device
TWI277788B (en) * 2002-05-13 2007-04-01 Au Optronics Corp Active matrix substrate of liquid crystal display device and method fabricating the same
TW538541B (en) * 2002-05-15 2003-06-21 Au Optronics Corp Active matrix substrate of liquid crystal display device and the manufacturing method thereof
TWI263339B (en) * 2002-05-15 2006-10-01 Semiconductor Energy Lab Light emitting device and method for manufacturing the same
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
US6738178B2 (en) * 2002-06-27 2004-05-18 Koninklijke Philips Electronics N.V. Electrically configurable photonic crystal
TW564327B (en) * 2002-10-14 2003-12-01 Hannstar Display Corp Active color filter on array structure and its manufacturing method
TWI307440B (en) * 2002-10-21 2009-03-11 Hannstar Display Corp
US7692063B2 (en) * 2002-11-12 2010-04-06 Ibio, Inc. Production of foreign nucleic acids and polypeptides in sprout systems
US20040110326A1 (en) * 2002-11-20 2004-06-10 Charles Forbes Active matrix thin film transistor array backplane
GB0229699D0 (en) * 2002-12-19 2003-01-29 Koninkl Philips Electronics Nv Liquid crystal displays
KR100887997B1 (en) * 2002-12-26 2009-03-09 엘지디스플레이 주식회사 Thin Film Transistor For Liquid Crystal Display Device Having Minimized Parasitic Capacitance Deviation
KR20040061292A (en) * 2002-12-30 2004-07-07 엘지.필립스 엘시디 주식회사 A method of fabricating liquid crystal display device
JP3575481B2 (en) * 2003-01-16 2004-10-13 セイコーエプソン株式会社 Liquid crystal device, method of manufacturing the same, and electronic equipment
GB0302485D0 (en) * 2003-02-04 2003-03-05 Plastic Logic Ltd Pixel capacitors
WO2005024595A2 (en) * 2003-09-03 2005-03-17 Visible Tech-Knowledgy, Inc. Electronically updateable label and display
GB0324189D0 (en) * 2003-10-16 2003-11-19 Univ Cambridge Tech Short-channel transistors
CN1621923A (en) * 2003-11-29 2005-06-01 鸿富锦精密工业（深圳）有限公司 Stored capacitor
KR100995020B1 (en) * 2003-12-27 2010-11-19 엘지디스플레이 주식회사 Liquid crystal display device and manufacturing of the same
KR100606449B1 (en) * 2003-12-29 2006-07-31 엘지.필립스 엘시디 주식회사 Fabrication method of liquid crysrtal dispay device
TWI234011B (en) * 2004-01-16 2005-06-11 Hannstar Display Corp Active color filter on array structure, manufacturing method thereof, and color LCD device including active color filter on array
US20050219200A1 (en) * 2004-03-31 2005-10-06 Weng Chien-Sen Fingerprint sensing pixel with a larger aperture
US7379135B2 (en) * 2004-05-28 2008-05-27 Fujitsu Limited Transflective liquid crystal display
US20060020904A1 (en) * 2004-07-09 2006-01-26 Antti Aaltonen Stripe user interface
KR101058122B1 (en) * 2004-09-08 2011-08-24 삼성전자주식회사 Array substrate, its manufacturing method and liquid crystal panel provided with the same
KR100696479B1 (en) * 2004-11-18 2007-03-19 삼성에스디아이 주식회사 Organic light emitting device and method for fabricating the same
JP4815196B2 (en) 2004-11-25 2011-11-16 オセ−テクノロジーズ・ベー・ヴエー Image generating element for printing apparatus having multiplex circuit for driving image generating electrode
EP1679560A3 (en) * 2004-11-25 2006-08-02 Océ-Technologies B.V. Image-forming element for a printing apparatus with multiplex circuit for driving the image-forming electrodes
TWI243484B (en) * 2004-12-10 2005-11-11 Au Optronics Corp Thin film transistor and method of making the same
GB2421833B (en) 2004-12-31 2007-04-04 Lg Philips Lcd Co Ltd Liquid crystal display device and method for fabricating the same
US20070299176A1 (en) * 2005-01-28 2007-12-27 Markley Thomas J Photodefinable low dielectric constant material and method for making and using same
JP4380570B2 (en) * 2005-03-25 2009-12-09 エプソンイメージングデバイス株式会社 Liquid crystal device and electronic device
KR100761077B1 (en) * 2005-05-12 2007-09-21 삼성에스디아이 주식회사 Organic electroluminescent display device
JP2008204966A (en) * 2005-05-23 2008-09-04 Sharp Corp Semiconductor device, manufacturing method therefor and liquid crystal display
US7799509B2 (en) * 2005-06-04 2010-09-21 Samsung Electronics Co., Ltd. Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same
CN100426101C (en) * 2005-06-25 2008-10-15 群康科技(深圳)有限公司 Liquid crystal display device
KR101287702B1 (en) * 2005-06-30 2013-07-24 엘지디스플레이 주식회사 transflective LCD and the fabrication method
TW200707048A (en) * 2005-08-10 2007-02-16 Novatek Microelectronics Corp Active matrix display with higher aperture
CN100412672C (en) * 2005-09-14 2008-08-20 友达光电股份有限公司 Thin film diode liquid crystal display device panel
TWI274221B (en) * 2005-09-29 2007-02-21 Au Optronics Corp Active device matrix substrate
JP2007103584A (en) * 2005-10-03 2007-04-19 Ricoh Co Ltd Transistor element, display device and manufacturing methods thereof
JP5144055B2 (en) * 2005-11-15 2013-02-13 三星電子株式会社 Display substrate and display device having the same
TWI284223B (en) * 2006-01-18 2007-07-21 Au Optronics Corp Liquid crystal display panel and liquid crystal display device incorporating the same
CN101365980B (en) * 2006-02-10 2010-11-24 夏普株式会社 Liquid crystal display panel and liquid crystal display
US8144115B2 (en) 2006-03-17 2012-03-27 Konicek Jeffrey C Flat panel display screen operable for touch position determination system and methods
US7859526B2 (en) * 2006-05-01 2010-12-28 Konicek Jeffrey C Active matrix emissive display and optical scanner system, methods and applications
KR101358827B1 (en) * 2006-07-24 2014-02-06 삼성디스플레이 주식회사 Liquid crystal display
TW200811569A (en) * 2006-08-21 2008-03-01 Prime View Int Co Ltd E-ink display panel
KR101389219B1 (en) * 2006-12-29 2014-04-24 엘지디스플레이 주식회사 Liquid Crystal Display Panel and Manufacturing Method thereof
KR20080070419A (en) * 2007-01-26 2008-07-30 삼성전자주식회사 Transflective liquid crystal and manufacturing method thereof
JP5075427B2 (en) * 2007-02-21 2012-11-21 株式会社ジャパンディスプレイセントラル Liquid crystal display
US20080264672A1 (en) * 2007-04-26 2008-10-30 Air Products And Chemicals, Inc. Photoimprintable Low Dielectric Constant Material and Method for Making and Using Same
US7934524B2 (en) * 2007-05-02 2011-05-03 Priebe Dean R Log splitter system for a front-loader tractor
KR101350795B1 (en) 2007-06-11 2014-01-10 삼성디스플레이 주식회사 Thin film transistor array substrate for x-ray detector
US20090181500A1 (en) * 2008-01-15 2009-07-16 Jochen Kuhmann Fabrication of Compact Semiconductor Packages
TWI360710B (en) * 2008-02-22 2012-03-21 Au Optronics Corp Active device array substrate, electro-optical app
GB0807767D0 (en) * 2008-04-29 2008-06-04 Plastic Logic Ltd Off-set top pixel electrode configuration
JP5489542B2 (en) * 2008-07-01 2014-05-14 キヤノン株式会社 Radiation detection apparatus and radiation imaging system
US20100102706A1 (en) * 2008-10-28 2010-04-29 Miller Michael E Electroluminescent device with increased fill factor
KR101048996B1 (en) * 2009-01-12 2011-07-12 삼성모바일디스플레이주식회사 Thin film transistor and flat panel display having same
US8234507B2 (en) 2009-01-13 2012-07-31 Metrologic Instruments, Inc. Electronic-ink display device employing a power switching mechanism automatically responsive to predefined states of device configuration
US8457013B2 (en) 2009-01-13 2013-06-04 Metrologic Instruments, Inc. Wireless dual-function network device dynamically switching and reconfiguring from a wireless network router state of operation into a wireless network coordinator state of operation in a wireless communication network
US8179490B2 (en) 2009-06-12 2012-05-15 Au Optronics Corporation Pixel designs of improving the aperture ratio in an LCD
US8471973B2 (en) * 2009-06-12 2013-06-25 Au Optronics Corporation Pixel designs of improving the aperture ratio in an LCD
US8471255B2 (en) * 2009-08-27 2013-06-25 Sharp Kabushiki Kaisha Bottom-gate thin-film transistor having a multilayered channel and method for manufacturing same
JP5212323B2 (en) 2009-09-14 2013-06-19 株式会社デンソー Control device for rotating electrical machine for vehicle
US8890270B2 (en) * 2010-01-29 2014-11-18 Kyocera Corporation Photoelectric conversion device and method for manufacturing the photoelectric conversion device
TWI439985B (en) 2010-08-26 2014-06-01 Chunghwa Picture Tubes Ltd Array substrate and method of fabricating the same
TWI483401B (en) * 2010-10-12 2015-05-01 Au Optronics Corp Thin film transistor and display panel
KR101774256B1 (en) * 2010-11-15 2017-09-05 삼성디스플레이 주식회사 Oxide semiconductor thin film transistor and method of manufacturing the same
KR101835525B1 (en) * 2011-02-17 2018-04-20 삼성디스플레이 주식회사 Display device and method of fabrication the same
KR101905757B1 (en) * 2011-11-17 2018-10-10 엘지디스플레이 주식회사 Array substrate for fringe field switching mode liquid crystal display device and method for fabricating the same
TWI451563B (en) * 2011-11-21 2014-09-01 Au Optronics Corp Thin flim transistor array and circuit structure thereof
US20130220672A1 (en) * 2012-02-28 2013-08-29 Touch Turns, Llc Single Layer Touch-Control Sensor Structure With Reduced Coupling To Proximate Ground Structures
CN102810558B (en) * 2012-08-07 2014-10-15 京东方科技集团股份有限公司 Thin film transistor, array substrate and preparation methods of thin film transistor and array substrate, and liquid crystal display
KR102025858B1 (en) 2012-10-17 2019-09-27 삼성디스플레이 주식회사 Display device
KR20140067559A (en) * 2012-11-27 2014-06-05 엘지디스플레이 주식회사 Thin film transistor array substrate for digital x-ray detector
CN103178119B (en) * 2013-03-25 2015-07-29 京东方科技集团股份有限公司 Array base palte, array base palte preparation method and display unit
CN103399440A (en) * 2013-08-08 2013-11-20 京东方科技集团股份有限公司 Array substrate, display device and drive method
KR20150029817A (en) * 2013-09-10 2015-03-19 삼성디스플레이 주식회사 Polarizer plate, display apparatus having the same and method of manufacturing polarizer plate
CN103762244A (en) * 2013-11-29 2014-04-30 深圳市华星光电技术有限公司 Thin film transistor, manufacturing method of thin film transistor, thin film transistor array substrate and liquid crystal panel
KR102122402B1 (en) * 2013-12-31 2020-06-15 엘지디스플레이 주식회사 COT Structure Liquid Crystal Display Device and method of fabricating the same
US9698173B2 (en) * 2014-08-24 2017-07-04 Royole Corporation Thin film transistor, display, and method for fabricating the same
CN104298040B (en) * 2014-10-31 2018-07-06 京东方科技集团股份有限公司 A kind of COA substrates and preparation method thereof and display device
CN104597671B (en) * 2015-01-22 2018-07-27 厦门天马微电子有限公司 array substrate, display panel and display device
CN105633096B (en) * 2016-01-05 2018-09-18 深圳市华星光电技术有限公司 Liquid crystal display panel, TFT substrate and its manufacturing method
KR102464900B1 (en) 2016-05-11 2022-11-09 삼성디스플레이 주식회사 Display device
JP2019145532A (en) * 2016-06-15 2019-08-29 ソニー株式会社 Imaging apparatus and electronic apparatus
CN108073007B (en) 2016-11-10 2021-08-13 元太科技工业股份有限公司 Pixel array
NL2020625B1 (en) 2017-12-22 2019-07-02 Illumina Inc Two-filter light detection devices and methods of manufacturing same
FR3083843B1 (en) * 2018-07-16 2020-07-17 Gaztransport Et Technigaz FLUID STORAGE FACILITY
US11398560B2 (en) * 2018-09-26 2022-07-26 Intel Corporation Contact electrodes and dielectric structures for thin film transistors
CN109659314B (en) * 2018-11-20 2021-01-15 深圳市华星光电技术有限公司 Array substrate and manufacturing method thereof
CN109686762B (en) * 2018-12-18 2021-03-16 武汉华星光电半导体显示技术有限公司 High screen ratio organic light emitting diode display panel
US20200312768A1 (en) * 2019-03-27 2020-10-01 Intel Corporation Controlled organic layers to enhance adhesion to organic dielectrics and process for forming such

Family Cites Families (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2459596A (en) * 1947-04-04 1949-01-18 Westinghouse Electric Corp Composite sequence filter for current circuits
JPS6059864B2 (en) 1980-03-19 1985-12-27 日東電工株式会社 Articles with composite membranes
DE3113041A1 (en) 1980-04-01 1982-01-28 Canon K.K., Tokyo METHOD AND DEVICE FOR DISPLAYING INFORMATION
US4431272A (en) 1980-05-08 1984-02-14 Kabushiki Kaisha Suwa Seikosha Liquid crystal display device
US4331272A (en) * 1981-01-29 1982-05-25 Ward Russell G Frameless back pack with tent
JPS5910988A (en) 1982-07-12 1984-01-20 ホシデン株式会社 Color liquid crystal display
US4636038A (en) 1983-07-09 1987-01-13 Canon Kabushiki Kaisha Electric circuit member and liquid crystal display device using said member
US4672454A (en) * 1984-05-04 1987-06-09 Energy Conversion Devices, Inc. X-ray image scanner and method
JPS6236687A (en) * 1985-08-12 1987-02-17 松下電器産業株式会社 Display unit
JPS6236684A (en) 1985-08-12 1987-02-17 Fujitsu Ltd Recording and reproducing method for hologram
US4731610A (en) * 1986-01-21 1988-03-15 Ovonic Imaging Systems, Inc. Balanced drive electronic matrix system and method of operating the same
US4728802A (en) * 1986-01-21 1988-03-01 Ovonic Imaging Systems, Inc. Balanced drive photosensitive pixel and method of operating the same
US4704559A (en) 1986-02-25 1987-11-03 Seiko Instruments & Electronics Ltd. Matrix type multi-color display device
EP0237017B1 (en) 1986-03-11 1995-09-06 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Electric-electronic device including polyimide thin film
JPH0770708B2 (en) 1986-03-25 1995-07-31 株式会社東芝 Field effect transistor
US4868616A (en) * 1986-12-11 1989-09-19 Energy Conversion Devices, Inc. Amorphous electronic matrix array for liquid crystal display
JPH065755B2 (en) 1987-01-16 1994-01-19 ホシデン株式会社 Thin film transistor
JP2521752B2 (en) 1987-05-11 1996-08-07 沖電気工業株式会社 Liquid crystal display
JPS63289965A (en) 1987-05-22 1988-11-28 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
US5229644A (en) 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
US5032883A (en) * 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
JP2594983B2 (en) * 1987-11-10 1997-03-26 カシオ計算機株式会社 Method for manufacturing thin film transistor
US4994434A (en) * 1988-02-08 1991-02-19 Eastman Kodak Company Method of forming a barrier layer arrangement for conductive layers on silicon substrates
JPH01241175A (en) 1988-03-23 1989-09-26 Seikosha Co Ltd Manufacture of amolphous silicon thin film transistor
US4994926C1 (en) 1988-09-22 2001-07-03 Audiofax Ip L L C Facsimile telecommunications system and method
US5072266A (en) * 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
JPH02196221A (en) * 1989-01-26 1990-08-02 Hitachi Ltd Liquid crystal display panel and its manufacture
JP2757207B2 (en) 1989-05-24 1998-05-25 株式会社リコー Liquid crystal display
US5246782A (en) 1990-12-10 1993-09-21 The Dow Chemical Company Laminates of polymers having perfluorocyclobutane rings and polymers containing perfluorocyclobutane rings
US5364547A (en) 1989-06-09 1994-11-15 The Dow Chemical Company Lubricants containing perfluorocyclobutane rings
JP2807496B2 (en) 1989-08-11 1998-10-08 シャープ株式会社 Active matrix substrate
US4980002A (en) 1989-08-16 1990-12-25 Unisys Corporation Method of fabricating a layered electronic assembly having compensation for chips of different thickness and different I/O lead offsets
JPH03242625A (en) * 1990-02-21 1991-10-29 Toshiba Corp Active matrix type liquid crystal display device
JP2622183B2 (en) * 1990-04-05 1997-06-18 シャープ株式会社 Active matrix display device
JPH07103992B2 (en) 1990-04-24 1995-11-08 リンナイ株式会社 Stove controller
JP2646289B2 (en) 1990-06-01 1997-08-27 富士写真フイルム株式会社 Resist composition
JP3053848B2 (en) 1990-07-09 2000-06-19 シャープ株式会社 Active matrix substrate
JPH0486047A (en) 1990-07-27 1992-03-18 Nec Corp Buffer circuit having preferential processing function
JPH04140180A (en) 1990-10-01 1992-05-14 Hitachi Ltd Terminal printer
JP2963529B2 (en) 1990-10-29 1999-10-18 シャープ株式会社 Active matrix display device
JPH0719973B2 (en) * 1990-10-31 1995-03-06 日本電気株式会社 Multilayer wiring board
DE69131570T2 (en) 1990-11-16 2000-02-17 Seiko Epson Corp Method of manufacturing a thin film semiconductor device
JP2836246B2 (en) 1990-11-29 1998-12-14 富士ゼロックス株式会社 Method of manufacturing thin film transistor and multilayer wiring
JP2731985B2 (en) 1991-05-31 1998-03-25 株式会社半導体エネルギー研究所 Driving method of electro-optical device
JPH04220625A (en) * 1990-12-21 1992-08-11 Sharp Corp Manufacture of active matrix liquid crystal display unit
JPH04257826A (en) 1991-02-13 1992-09-14 Sharp Corp Manufacture of active matrix substrate
JP2676092B2 (en) 1991-03-27 1997-11-12 株式会社 半導体エネルギー研究所 Electro-optical device
JP2722832B2 (en) 1991-02-22 1998-03-09 日本電気株式会社 Liquid crystal display device
JP2625268B2 (en) * 1991-03-19 1997-07-02 シャープ株式会社 Active matrix substrate
JP3082277B2 (en) 1991-04-05 2000-08-28 セイコーエプソン株式会社 Liquid crystal display
US5302987A (en) * 1991-05-15 1994-04-12 Sharp Kabushiki Kaisha Active matrix substrate including connecting electrode with extended portion
JPH04345132A (en) * 1991-05-23 1992-12-01 Hitachi Ltd Liquid crystal display device
US5177588A (en) 1991-06-14 1993-01-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including nitride layer
JP2558974B2 (en) 1991-06-27 1996-11-27 松下電器産業株式会社 Optical head transfer device
US5414278A (en) * 1991-07-04 1995-05-09 Mitsushibi Denki Kabushiki Kaisha Active matrix liquid crystal display device
JPH0536898A (en) 1991-07-29 1993-02-12 Nec Corp Semiconductor integrated circuit
EP0536898B1 (en) 1991-09-10 1997-07-02 Sharp Kabushiki Kaisha Reflection type liquid crystal display device and method of manufacturing the same
US5442237A (en) 1991-10-21 1995-08-15 Motorola Inc. Semiconductor device having a low permittivity dielectric
EP0569601B1 (en) 1991-11-29 1999-10-13 Seiko Epson Corporation Liquid crystal display and method of manufacturing same
JP3067362B2 (en) * 1991-12-19 2000-07-17 ソニー株式会社 Liquid crystal panel manufacturing method
US5422293A (en) * 1991-12-24 1995-06-06 Casio Computer Co., Ltd. Method for manufacturing a TFT panel
JPH05249478A (en) * 1991-12-25 1993-09-28 Toshiba Corp Liquid crystal display device
US5457553A (en) 1991-12-25 1995-10-10 Casio Computer Co., Ltd. Thin-film transistor panel with reduced number of capacitor lines
JPH05203936A (en) 1992-01-29 1993-08-13 Seiko Instr Inc Electro-optical liquid crystal element
US5411629A (en) 1992-02-03 1995-05-02 Motorola, Inc. Method for roughening surface of halocarbon film
JP3133140B2 (en) * 1992-04-01 2001-02-05 株式会社半導体エネルギー研究所 Display device
JP2760462B2 (en) 1992-05-13 1998-05-28 シャープ株式会社 Active matrix substrate
JPH05326636A (en) 1992-05-22 1993-12-10 Sumitomo Electric Ind Ltd Mounting board
JPH05326641A (en) 1992-05-22 1993-12-10 Sumitomo Electric Ind Ltd Semiconductor device
JPH05336898A (en) 1992-06-10 1993-12-21 Showa Hoso Zairyo Kk Paper for boil-cooking
GB9212838D0 (en) * 1992-06-17 1992-07-29 Ici Plc Polymeric film
US5548034A (en) * 1992-07-31 1996-08-20 International Business Machines Corporation Modified dicyanate ester resins having enhanced fracture toughness
DE4227096A1 (en) * 1992-08-17 1994-02-24 Philips Patentverwaltung X-ray image detector
JPH0669190A (en) * 1992-08-21 1994-03-11 Fujitsu Ltd Method of forming fluoric resin film
US5281546A (en) 1992-09-02 1994-01-25 General Electric Company Method of fabricating a thin film transistor using hydrogen plasma treatment of the intrinsic silicon/doped layer interface
US5459596A (en) 1992-09-14 1995-10-17 Kabushiki Kaisha Toshiba Active matrix liquid crystal display with supplemental capacitor line which overlaps signal line
DE69327028T2 (en) 1992-09-25 2000-05-31 Sony Corp Liquid crystal display device
US5445898A (en) 1992-12-16 1995-08-29 Westinghouse Norden Systems Sunlight viewable thin film electroluminescent display
JP3383047B2 (en) 1992-12-25 2003-03-04 ソニー株式会社 Active matrix substrate
EP0603866B1 (en) 1992-12-25 2002-07-24 Sony Corporation Active matrix substrate
JPH06202158A (en) * 1993-01-05 1994-07-22 Nec Corp Active matrix liquid crystal display device and its manufacture
JP3239504B2 (en) 1993-01-13 2001-12-17 富士通株式会社 Method of manufacturing thin film transistor matrix
US5477359A (en) * 1993-01-21 1995-12-19 Sharp Kabushiki Kaisha Liquid crystal projector having a vertical orientating polyimide film
JPH06235929A (en) * 1993-02-10 1994-08-23 Seiko Epson Corp Manufacture of liquid crystal display device and liquid crystal display device
JPH06242467A (en) * 1993-02-17 1994-09-02 Sanyo Electric Co Ltd Liquid crystal display device and its production
US5396261A (en) * 1993-03-01 1995-03-07 Wah-Iii Technology Corporation Polysilicon gate bus with interspersed buffers for driving a row of pixels in an active matrix liquid crystal display
JP3413230B2 (en) * 1993-03-02 2003-06-03 セイコーエプソン株式会社 Liquid crystal display
JPH06267986A (en) 1993-03-17 1994-09-22 Hitachi Ltd Method of manufacturing thin film transistor
JP2853505B2 (en) 1993-03-19 1999-02-03 三菱電機株式会社 Stationary guidance equipment
JP3144132B2 (en) 1993-03-22 2001-03-12 松下電器産業株式会社 Liquid crystal display device and projection display device using the same
JP2812851B2 (en) 1993-03-24 1998-10-22 シャープ株式会社 Reflective liquid crystal display
US5477360A (en) * 1993-04-23 1995-12-19 Kabushiki Kaisha Toshiba Liquid crystal display device
DE69416200T2 (en) * 1993-06-16 1999-06-02 Nitto Denko Corp Probe construction
JPH0728093A (en) 1993-07-13 1995-01-31 Sony Corp Active matrix substrate for display
EP0660160B1 (en) * 1993-07-13 2004-03-17 Kabushiki Kaisha Toshiba Active matrix type display device
US5466355A (en) * 1993-07-15 1995-11-14 Japan Energy Corporation Mosaic target
US5463484A (en) * 1993-10-29 1995-10-31 Brody; Thomas P. Method for manufacturing laminated U V-sensitive color filters for liquid crystal displays
JP3203911B2 (en) 1993-11-05 2001-09-04 ソニー株式会社 Active matrix liquid crystal display
US5477239A (en) * 1993-11-12 1995-12-19 Dell Usa, L.P. Front lighting system for liquid crystal display
US5414283A (en) 1993-11-19 1995-05-09 Ois Optical Imaging Systems, Inc. TFT with reduced parasitic capacitance
JP3214202B2 (en) 1993-11-24 2001-10-02 ソニー株式会社 Semiconductor device for display element substrate
FR2716010B1 (en) * 1994-02-04 1996-04-19 Toxot Science & Appl Device and methods for manufacturing and repairing colored filters.
US5486493A (en) 1994-02-25 1996-01-23 Jeng; Shin-Puu Planarized multi-level interconnect scheme with embedded low-dielectric constant insulators
US5682211A (en) 1994-04-28 1997-10-28 Xerox Corporation Integrated dark matrix for an active matrix liquid crystal display with pixel electrodes overlapping gate data lines
MY114271A (en) * 1994-05-12 2002-09-30 Casio Computer Co Ltd Reflection type color liquid crystal display device
US5600458A (en) 1994-06-01 1997-02-04 Sharp Kabushiki Kaisha Active matrix display having at least one nonlinear element composed of a sulfide film
EP1722403B1 (en) 1994-06-15 2012-07-25 Seiko Epson Corporation Fabrication method for a thin film semiconductor device
US5625232A (en) 1994-07-15 1997-04-29 Texas Instruments Incorporated Reliability of metal leads in high speed LSI semiconductors using dummy vias
US5483366A (en) 1994-07-20 1996-01-09 David Sarnoff Research Center Inc LCD with hige capacitance pixel having an ITO active region/poly SI pixel region electrical connection and having poly SI selection line extensions along pixel edges
JP3059915B2 (en) 1994-09-29 2000-07-04 三洋電機株式会社 Display device and method of manufacturing display device
JP3240858B2 (en) 1994-10-19 2001-12-25 ソニー株式会社 Color display
US5559055A (en) * 1994-12-21 1996-09-24 Advanced Micro Devices, Inc. Method of decreased interlayer dielectric constant in a multilayer interconnect structure to increase device speed performance
US5498880A (en) * 1995-01-12 1996-03-12 E. I. Du Pont De Nemours And Company Image capture panel using a solid state device
US5528209A (en) * 1995-04-27 1996-06-18 Hughes Aircraft Company Monolithic microwave integrated circuit and method
US5539219A (en) 1995-05-19 1996-07-23 Ois Optical Imaging Systems, Inc. Thin film transistor with reduced channel length for liquid crystal displays
US5532180A (en) 1995-06-02 1996-07-02 Ois Optical Imaging Systems, Inc. Method of fabricating a TFT with reduced channel length
US5641974A (en) 1995-06-06 1997-06-24 Ois Optical Imaging Systems, Inc. LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween
US5994721A (en) 1995-06-06 1999-11-30 Ois Optical Imaging Systems, Inc. High aperture LCD with insulating color filters overlapping bus lines on active substrate
JP2768313B2 (en) 1995-06-13 1998-06-25 日本電気株式会社 Reflective liquid crystal display
KR970011972A (en) 1995-08-11 1997-03-29 쯔지 하루오 Transmission type liquid crystal display device and manufacturing method thereof
US5650358A (en) 1995-08-28 1997-07-22 Ois Optical Imaging Systems, Inc. Method of making a TFT having a reduced channel length
JP3049689B2 (en) 1995-09-14 2000-06-05 キヤノン株式会社 Liquid crystal display
US5821621A (en) 1995-10-12 1998-10-13 Texas Instruments Incorporated Low capacitance interconnect structure for integrated circuits
US5917563A (en) * 1995-10-16 1999-06-29 Sharp Kabushiki Kaisha Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bus line
JPH09218425A (en) 1996-02-09 1997-08-19 Toshiba Electron Eng Corp Liquid crystal display device and its production
DE19712233C2 (en) 1996-03-26 2003-12-11 Lg Philips Lcd Co Liquid crystal display and manufacturing method therefor
US5770871A (en) * 1996-06-20 1998-06-23 Xerox Corporation Sensor array with anticoupling layer between data lines and charge collection electrodes
JP3691917B2 (en) 1996-10-31 2005-09-07 広島オプト株式会社 Color liquid crystal display device
KR100251091B1 (en) 1996-11-29 2000-04-15 구본준 Method of manufacturing liquid crystal display device and liquid crystal display device
US6011274A (en) * 1997-10-20 2000-01-04 Ois Optical Imaging Systems, Inc. X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetween
US5994157A (en) * 1998-01-22 1999-11-30 Ois Optical Imaging Systems, Inc. Method of making a large area imager with UV Blocking layer, and corresponding imager
JP4140180B2 (en) 2000-08-31 2008-08-27 富士ゼロックス株式会社 Transistor

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