CA2166043A1 - Process for encapsulating an electronic component, an electronic component thus encapsulated, and encapsulating material designed therefor - Google Patents
Process for encapsulating an electronic component, an electronic component thus encapsulated, and encapsulating material designed thereforInfo
- Publication number
- CA2166043A1 CA2166043A1 CA002166043A CA2166043A CA2166043A1 CA 2166043 A1 CA2166043 A1 CA 2166043A1 CA 002166043 A CA002166043 A CA 002166043A CA 2166043 A CA2166043 A CA 2166043A CA 2166043 A1 CA2166043 A1 CA 2166043A1
- Authority
- CA
- Canada
- Prior art keywords
- encapsulating material
- weight
- encapsulating
- thermoplast
- reactive solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
- C08L81/06—Polysulfones; Polyethersulfones
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/40—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Process for encapsulating an electronic component, in particular an integrated circuit, with an encapsulating material, at least comprising the steps of:
- placing the component to be encapsulated in a cavity of a mould;
- introducing the encapsulating material at elevated temperature into the cavity between the mould and the component to be encapsulated;
- hardening the encapsulating material; and - releasing the encapsulated component from the cavity, the encapsulating material used comprising 40-65 % by weight of the engineering thermoplast and 60-35 % by weight of the reactive solvent.
- placing the component to be encapsulated in a cavity of a mould;
- introducing the encapsulating material at elevated temperature into the cavity between the mould and the component to be encapsulated;
- hardening the encapsulating material; and - releasing the encapsulated component from the cavity, the encapsulating material used comprising 40-65 % by weight of the engineering thermoplast and 60-35 % by weight of the reactive solvent.
Description
- 2t 660i43 Process for encapsulating an electronic component, an electronic component thus encapsulated, and encapsulating material designed therefor.
BACKGROUND OF THE INVENTION
The present invention in the first instance relates to a process for encapsulating an electronic component, in particular an integrated circuit, with an encapsulating material which comprises an engineering thermoplast and a reactive solvent, at least comprising the steps of:
- placing the component to be encapsulated in a cavity of a mould;
- introducing the encapsulating material at elevated temperature into the cavity between the mould and the component to be encapsulated;
- hardening the encapsulating material; and - releasing the encapsulated component from the cavity.
DISCUSSION OF THE PRIOR ART
Such a process is generally known and is employed for encapsulating a variety of electronic components.
The term engineering thermoplast refers to thermoplasts having a relatively high softening temperature, i.e. a glass transition temperature or a melt temperature which is so high that the encapsulation remains dimensionally stable during the use of, for example, an integrated circuit, where high temperatures are frequently encountered, and where a considerable amount of heat can be generated. It will be evident that, at the temperatures encountered, the encapsulation must not deform. It will further be evident that the glass transition temperature, in particular in the case of integrated circuits, cannot be too high, in order to prevent irremediable damage being inflicted on the circuit during the encapsulation process.
These thermoplastic encapsulating plastics have the advantage that the encapsulation exhibits ductile fraction behaviour and the encapsulation starting material is not ` 2 1 66Q43 , subject to reactions or the like which make processing impossible after extended periods.
Reactive solvents used, generally thermosets, usually exhibit a brittle fracture behaviour. Thermosets have to be stored and transported under cold conditions since the curing reaction takes place even at room temperature.
A drawback of engineering thermoplasts is that, owing to the high softening temperature, the processing temperature is correspondingly high, degradation of the plastic very often taking place in the process.
Furthermore, engineering thermoplasts exhibit poor adhesion to polar surfaces of electronic components such as metal surfaces of integrated circuits.
Although the use of encapsulating materials for the above method comprising a thermoplast and a reactive solvent are known the weight ratio thereof used in the prior art is limited. The amount of thermoplast is relatively low with respect to the amount of reactive solvent. In this respect reference is made to the following documents.
EP-A-O 365 168 discloses a moulding composition comprising a thermoset and a thermoplast. The amount of thermoplast used is maximum 35 % by weight and the optimum specified is at about 25 % by weight. It is preferred in said European application to obtain a composition in which each of the components after curing is present at least partly as a continuous phase providing a network of the phases in the mass.
EP-A-O 151 553 discloses an epoxy resin/polysulphone moulding composition. The amount of polysulphone is 6-14 %
by weight.
EP-A-O 211 147 discloses an epoxy resin composition comprising 0.5 to 10 parts by weight of a polysulphone resin.
Moulding compositions with relatively low amounts of thermoplast have the disadvantage that the properties thereof are dominated by the thermoset. That is these still posses a relatively brittle fracture behaviour, are difficult to handle due to the thermoset, i.e. needs to be . ` 21 66043 stored at low temperatures, and encapsulated products need to be post-cured.
SUMMARY OF THE INVENTION
The object of the present invention is to provide a solution for the abovementioned drawbacks and to that end is characterized in that the encapsulating material used comprises 40-65 % by weight of the engineering thermoplast and 60-35 % by weight of the reactive solvent. Preferably the encapsulating material used comprises 50-60 % by weight of the engineering thermoplast and 50-40 % by weight of the reactive solvent and most preferred the mixing ratio of thermoplast and reactive solvent is 1:1.
During the hardening of the encapsulating material according to the invention a phase separation occurs and a continuous thermoplast phase containing a dispersed reactive solvent phase is obtained. It was found, surprisingly, that in the presence of a polar surface, for example a metal surface of an integrated circuit, a preferential phase separation occurs near the surface, a thin layer of reactive solvent being deposited on the surface. As a result, adhesion of the encapsulating material after curing is comparable with the adhesion between a commonly used thermoset and an electronic component.
If the amount of thermoplast is higher than 65 % by weight then the viscosity of the composition will be too high, inhibiting processing, and the adhesion to the encapsulated product will be insufficient.
The encapsulating material blend according to the invention has further excellent ignition characteristics, so that the addition of commonly used halogen-containing flame retardants is no longer necessary. This has a beneficial effect on the re-use of the material.
Additionally, the material can thus be incinerated without any problems. In the case of re-use, the thermoplast can be separated from the reactive solvent and possibly be used agaln .
~ 1 66043 _ -- 4 Commonly used encapsulations comprising relatively high amounts of thermosets should, after the moulding process and the release of the encapsulated component from the cavity, additionally undergo a supplementary curing process, often in an oven for 4-5 h at elevated temperature. Because of the presence of the specific amount of thermoplast according to the invention, this post-curing operation is unnecessary, since the product, after being released from the cavity, already has sufficient inherent strength. Full curing of the thermoset can take place over time.
The reactive solvent according to the invention is not specifically limited but preferably comprises a reactive component which can polymerize, cross-link or both.
Advantageously said solvent is selected from unsaturated olefins (e.g. hexadiene), unsaturated aromatic olefins (e.g. styrene, divinylbenzene), cyclic ethers (e.g.
propylene oxyde), cyclic amides (e.g. caprolactam), acrylates (e.g. methylmethacrylate), acrylonitrile, thermosetting resins (e.g. unsaturated polyesters, epoxy resins and organic isocyanates, with their respective curing agents, polyamides, aliphatic and alicyclic amines, aromatic amines (e.g. diaminodiphenylsulphone), carboxylic acids, carboxylic acid anhydrides (e.g. phtalic acid anhydride), phenolics, polyalcohols, and mixtures thereof.
How the polymerisation and/or cross-linking of the reactive solvent is effected is depending on the specific selection of the reactive solvent and is known to the ordinary expert.
Without Applicant wishing to be limited to any particular mechanism, the blend of thermoplast and reactive solvent is found to behave as follows during the process according to the invention. During processing, a solution of the thermoplast and the reactive solvent is obtained.
The thermoplast therefore does not melt, but is, as it were, lubricated by the reactive solvent and as a result is able to form a homogeneous blend with said solvent. Upon hardening of the solvent phase separation occurs, the thermoplast forming the continuous phase and the reactive .~
solvent forming the dispersed phase. It was found that the blend of thermoplast / reactive solvent can be processed at a lower temperature than the glass transition temperature or the melting temperature of the thermoplast.
The encapsulating material according to the invention can be produced by blending a reactive solvent with a thermoplast, the former frequently being a liquid product and the latter usually being a powder. As a result of the thermoplast being softened during blending, it is possible to obtain, after cooling of the blend, a homogeneous solution of reactive solvent and thermoplast, the solvent being encapsulated in such a way, owing to the presence of the vitrified thermoplast, that the full hardening reaction of the solvent is inhibited, and storage and transportation can take place at room temperature. The latter being very important in the case thermosets are used as a reactive solvent.
There is no particular restriction on thermo-plastics which can be used with the present invention, apart from the fact that they must, of course, be able to withstand the temperatures which occur during operation of electronic components such as integrated circuits. Examples of engineering thermoplasts are thermoplasts of polyethylenetherephtalate, polybutylenetherephtalate, polycarbonate, polyamide, polyketone, polyetherketone etherketone ketone, polyetherketoneketone, polyphenylenesulphide, polyphenylene ether, polyphenylene sulphide sulphone, polysulphone, polyethersulphone, polyimide, polyetherimide, polyamide imide, and polyimide sulphone, and mixtures thereof.
In the case of conventional encapsulating methods, which employ thermosets, it is preferable, in view of the production rate, to employ rapid curing agents, curing agents which are able to cure thermosetting plastic within a very short time, but in practice such curing agents are found to cause such stress in the thermosetting material that the end product becomes brittle. In the case of the present invention this problem does not occur and the rapid curing agents can be employed.
The encapsulating material according to the invention may further include commonly used additives such as solvents, fillers, additives which assist the processing of plastics, etc., provided that these materials do not interfere with the phase structure of the encapsulating material according to the invention when used for encapsulating an electronic component, i.e. the continuous thermoplast phase and the dispersed reactive solvent phase.
It was found that the viscosity of the blend of thermoplast/thermoset at the processing temperature is lower than that of the thermoplast on its own, and as a result the encapsulating material in the case of an amorphous thermoplast is advantageously processed at a temperature not higher than about the glass transition temperature of the thermoplast. In the case of semi-crystalline thermoplasts the processing temperature is preferably below the crystallisation temperature thereof.
The invention further provides an encapsulating material, in particular intended for encapsulating electronic components, at least comprising 40-65 % by weight of an engineering thermoplast and 60-35 % by weight of a reactive solvent. Preferably said material comprises at least 50-60 % by weight of an engineering thermoplast and 50-40 % by weight of a reactive solvent.
Finally an electronic component, in particular an integrated circuit, provided with an encapsulation made of an encapsulating material according to the invention is provided.
The invention is explained below in more detail with reference to an example.
EXAMPLE
various proportions of a thermoplast were blended with a thermoset. The thermoplast used was a polysulphone thermoplast, BASF's Ultrason S1010, and the thermoset used was an epoxy resin, viz. the diglycidyl ether of bisphenol A, Shell's Epikote 828EL, the curing agent being the diamine curing agent LONZA M-DEA (gelling time + 20 min at a temperature of 170C).
The polysulphone (PSU) was pulverized. Then such 2 t 6604~
_ - 7 amounts of PSU and epoxy resin were weighed that the ultimate weight ratios, i.e. after the addition of the requisite amount of M-DEA, PSU: (epoxy resin + curing agent) were equal to 60:40 and 50:50, respectively. The weighed amounts of PSU and epoxy resin were blended to a paste in a Brabender kneader (60 cm3) with an initial temperature of 130C. During blending, the torque of the kneader was measured and, at the instant it increased, the temperature was gradually raised to 200C over 40 min.
After an homogeneous blend had been obtained, the temperature was lowered to 140C. Finally, 8.56 g and 10.7 g, respectively, of the M-DEA curing agent were admixed over 5 min, after which the blend was removed from the kneader and was cooled to room temperature as rapidly as possible. The table below gives the glass transition temperature and the viscosity at 170C of the various weight ratios. As can be clearly seen, the glass transition temperature and the viscosity decrease with increasing proportions of thermoset.
20Weight ratio T~Viscosity at 170C
Thermoplast: [C] ~Pa.s]
thermoset 100: 0 190 >109 60:40 70 103 25 50:50 60 50 The viscosity was measured by means of a Rheo-metrics in dynamic conditions with an effective shear rate of 10 s-'. The temperature of 170C is a commonly used moulding temperature when encapsulating integrated circuits.
A 50:50 blend provided good encapsulation for the integrated circuits.
BACKGROUND OF THE INVENTION
The present invention in the first instance relates to a process for encapsulating an electronic component, in particular an integrated circuit, with an encapsulating material which comprises an engineering thermoplast and a reactive solvent, at least comprising the steps of:
- placing the component to be encapsulated in a cavity of a mould;
- introducing the encapsulating material at elevated temperature into the cavity between the mould and the component to be encapsulated;
- hardening the encapsulating material; and - releasing the encapsulated component from the cavity.
DISCUSSION OF THE PRIOR ART
Such a process is generally known and is employed for encapsulating a variety of electronic components.
The term engineering thermoplast refers to thermoplasts having a relatively high softening temperature, i.e. a glass transition temperature or a melt temperature which is so high that the encapsulation remains dimensionally stable during the use of, for example, an integrated circuit, where high temperatures are frequently encountered, and where a considerable amount of heat can be generated. It will be evident that, at the temperatures encountered, the encapsulation must not deform. It will further be evident that the glass transition temperature, in particular in the case of integrated circuits, cannot be too high, in order to prevent irremediable damage being inflicted on the circuit during the encapsulation process.
These thermoplastic encapsulating plastics have the advantage that the encapsulation exhibits ductile fraction behaviour and the encapsulation starting material is not ` 2 1 66Q43 , subject to reactions or the like which make processing impossible after extended periods.
Reactive solvents used, generally thermosets, usually exhibit a brittle fracture behaviour. Thermosets have to be stored and transported under cold conditions since the curing reaction takes place even at room temperature.
A drawback of engineering thermoplasts is that, owing to the high softening temperature, the processing temperature is correspondingly high, degradation of the plastic very often taking place in the process.
Furthermore, engineering thermoplasts exhibit poor adhesion to polar surfaces of electronic components such as metal surfaces of integrated circuits.
Although the use of encapsulating materials for the above method comprising a thermoplast and a reactive solvent are known the weight ratio thereof used in the prior art is limited. The amount of thermoplast is relatively low with respect to the amount of reactive solvent. In this respect reference is made to the following documents.
EP-A-O 365 168 discloses a moulding composition comprising a thermoset and a thermoplast. The amount of thermoplast used is maximum 35 % by weight and the optimum specified is at about 25 % by weight. It is preferred in said European application to obtain a composition in which each of the components after curing is present at least partly as a continuous phase providing a network of the phases in the mass.
EP-A-O 151 553 discloses an epoxy resin/polysulphone moulding composition. The amount of polysulphone is 6-14 %
by weight.
EP-A-O 211 147 discloses an epoxy resin composition comprising 0.5 to 10 parts by weight of a polysulphone resin.
Moulding compositions with relatively low amounts of thermoplast have the disadvantage that the properties thereof are dominated by the thermoset. That is these still posses a relatively brittle fracture behaviour, are difficult to handle due to the thermoset, i.e. needs to be . ` 21 66043 stored at low temperatures, and encapsulated products need to be post-cured.
SUMMARY OF THE INVENTION
The object of the present invention is to provide a solution for the abovementioned drawbacks and to that end is characterized in that the encapsulating material used comprises 40-65 % by weight of the engineering thermoplast and 60-35 % by weight of the reactive solvent. Preferably the encapsulating material used comprises 50-60 % by weight of the engineering thermoplast and 50-40 % by weight of the reactive solvent and most preferred the mixing ratio of thermoplast and reactive solvent is 1:1.
During the hardening of the encapsulating material according to the invention a phase separation occurs and a continuous thermoplast phase containing a dispersed reactive solvent phase is obtained. It was found, surprisingly, that in the presence of a polar surface, for example a metal surface of an integrated circuit, a preferential phase separation occurs near the surface, a thin layer of reactive solvent being deposited on the surface. As a result, adhesion of the encapsulating material after curing is comparable with the adhesion between a commonly used thermoset and an electronic component.
If the amount of thermoplast is higher than 65 % by weight then the viscosity of the composition will be too high, inhibiting processing, and the adhesion to the encapsulated product will be insufficient.
The encapsulating material blend according to the invention has further excellent ignition characteristics, so that the addition of commonly used halogen-containing flame retardants is no longer necessary. This has a beneficial effect on the re-use of the material.
Additionally, the material can thus be incinerated without any problems. In the case of re-use, the thermoplast can be separated from the reactive solvent and possibly be used agaln .
~ 1 66043 _ -- 4 Commonly used encapsulations comprising relatively high amounts of thermosets should, after the moulding process and the release of the encapsulated component from the cavity, additionally undergo a supplementary curing process, often in an oven for 4-5 h at elevated temperature. Because of the presence of the specific amount of thermoplast according to the invention, this post-curing operation is unnecessary, since the product, after being released from the cavity, already has sufficient inherent strength. Full curing of the thermoset can take place over time.
The reactive solvent according to the invention is not specifically limited but preferably comprises a reactive component which can polymerize, cross-link or both.
Advantageously said solvent is selected from unsaturated olefins (e.g. hexadiene), unsaturated aromatic olefins (e.g. styrene, divinylbenzene), cyclic ethers (e.g.
propylene oxyde), cyclic amides (e.g. caprolactam), acrylates (e.g. methylmethacrylate), acrylonitrile, thermosetting resins (e.g. unsaturated polyesters, epoxy resins and organic isocyanates, with their respective curing agents, polyamides, aliphatic and alicyclic amines, aromatic amines (e.g. diaminodiphenylsulphone), carboxylic acids, carboxylic acid anhydrides (e.g. phtalic acid anhydride), phenolics, polyalcohols, and mixtures thereof.
How the polymerisation and/or cross-linking of the reactive solvent is effected is depending on the specific selection of the reactive solvent and is known to the ordinary expert.
Without Applicant wishing to be limited to any particular mechanism, the blend of thermoplast and reactive solvent is found to behave as follows during the process according to the invention. During processing, a solution of the thermoplast and the reactive solvent is obtained.
The thermoplast therefore does not melt, but is, as it were, lubricated by the reactive solvent and as a result is able to form a homogeneous blend with said solvent. Upon hardening of the solvent phase separation occurs, the thermoplast forming the continuous phase and the reactive .~
solvent forming the dispersed phase. It was found that the blend of thermoplast / reactive solvent can be processed at a lower temperature than the glass transition temperature or the melting temperature of the thermoplast.
The encapsulating material according to the invention can be produced by blending a reactive solvent with a thermoplast, the former frequently being a liquid product and the latter usually being a powder. As a result of the thermoplast being softened during blending, it is possible to obtain, after cooling of the blend, a homogeneous solution of reactive solvent and thermoplast, the solvent being encapsulated in such a way, owing to the presence of the vitrified thermoplast, that the full hardening reaction of the solvent is inhibited, and storage and transportation can take place at room temperature. The latter being very important in the case thermosets are used as a reactive solvent.
There is no particular restriction on thermo-plastics which can be used with the present invention, apart from the fact that they must, of course, be able to withstand the temperatures which occur during operation of electronic components such as integrated circuits. Examples of engineering thermoplasts are thermoplasts of polyethylenetherephtalate, polybutylenetherephtalate, polycarbonate, polyamide, polyketone, polyetherketone etherketone ketone, polyetherketoneketone, polyphenylenesulphide, polyphenylene ether, polyphenylene sulphide sulphone, polysulphone, polyethersulphone, polyimide, polyetherimide, polyamide imide, and polyimide sulphone, and mixtures thereof.
In the case of conventional encapsulating methods, which employ thermosets, it is preferable, in view of the production rate, to employ rapid curing agents, curing agents which are able to cure thermosetting plastic within a very short time, but in practice such curing agents are found to cause such stress in the thermosetting material that the end product becomes brittle. In the case of the present invention this problem does not occur and the rapid curing agents can be employed.
The encapsulating material according to the invention may further include commonly used additives such as solvents, fillers, additives which assist the processing of plastics, etc., provided that these materials do not interfere with the phase structure of the encapsulating material according to the invention when used for encapsulating an electronic component, i.e. the continuous thermoplast phase and the dispersed reactive solvent phase.
It was found that the viscosity of the blend of thermoplast/thermoset at the processing temperature is lower than that of the thermoplast on its own, and as a result the encapsulating material in the case of an amorphous thermoplast is advantageously processed at a temperature not higher than about the glass transition temperature of the thermoplast. In the case of semi-crystalline thermoplasts the processing temperature is preferably below the crystallisation temperature thereof.
The invention further provides an encapsulating material, in particular intended for encapsulating electronic components, at least comprising 40-65 % by weight of an engineering thermoplast and 60-35 % by weight of a reactive solvent. Preferably said material comprises at least 50-60 % by weight of an engineering thermoplast and 50-40 % by weight of a reactive solvent.
Finally an electronic component, in particular an integrated circuit, provided with an encapsulation made of an encapsulating material according to the invention is provided.
The invention is explained below in more detail with reference to an example.
EXAMPLE
various proportions of a thermoplast were blended with a thermoset. The thermoplast used was a polysulphone thermoplast, BASF's Ultrason S1010, and the thermoset used was an epoxy resin, viz. the diglycidyl ether of bisphenol A, Shell's Epikote 828EL, the curing agent being the diamine curing agent LONZA M-DEA (gelling time + 20 min at a temperature of 170C).
The polysulphone (PSU) was pulverized. Then such 2 t 6604~
_ - 7 amounts of PSU and epoxy resin were weighed that the ultimate weight ratios, i.e. after the addition of the requisite amount of M-DEA, PSU: (epoxy resin + curing agent) were equal to 60:40 and 50:50, respectively. The weighed amounts of PSU and epoxy resin were blended to a paste in a Brabender kneader (60 cm3) with an initial temperature of 130C. During blending, the torque of the kneader was measured and, at the instant it increased, the temperature was gradually raised to 200C over 40 min.
After an homogeneous blend had been obtained, the temperature was lowered to 140C. Finally, 8.56 g and 10.7 g, respectively, of the M-DEA curing agent were admixed over 5 min, after which the blend was removed from the kneader and was cooled to room temperature as rapidly as possible. The table below gives the glass transition temperature and the viscosity at 170C of the various weight ratios. As can be clearly seen, the glass transition temperature and the viscosity decrease with increasing proportions of thermoset.
20Weight ratio T~Viscosity at 170C
Thermoplast: [C] ~Pa.s]
thermoset 100: 0 190 >109 60:40 70 103 25 50:50 60 50 The viscosity was measured by means of a Rheo-metrics in dynamic conditions with an effective shear rate of 10 s-'. The temperature of 170C is a commonly used moulding temperature when encapsulating integrated circuits.
A 50:50 blend provided good encapsulation for the integrated circuits.
Claims (7)
1. Process for encapsulating an electronic component, in particular an integrated circuit, with an encapsulating material which comprises an engineering thermoplast and a reactive solvent, at least comprising the steps of:
- placing the component to be encapsulated in a cavity of a mould;
- introducing the encapsulating material at elevated temperature into the cavity between the mould and the component to be encapsulated;
- hardening the encapsulating material; and - releasing the encapsulated component from the cavity, wherein the encapsulating material used comprises 40-65 %
by weight of the engineering thermoplast and 60-35 % by weight of the reactive solvent.
- placing the component to be encapsulated in a cavity of a mould;
- introducing the encapsulating material at elevated temperature into the cavity between the mould and the component to be encapsulated;
- hardening the encapsulating material; and - releasing the encapsulated component from the cavity, wherein the encapsulating material used comprises 40-65 %
by weight of the engineering thermoplast and 60-35 % by weight of the reactive solvent.
2. Process according to claim 1, wherein the encapsulating material used comprises 50-60 % by weight of the engineering thermoplast and 50-40 % by weight of the reactive solvent.
3. Process according to claim 1, wherein the reactive solvent comprises a reactive component which can polymerize, cross-link or both.
4. Process according to claim 1, wherein the reactive solvent is selected from unsaturated olefins, unsaturated aromatic olefins, cyclic ethers, cyclic amides, acrylates, acrylonitrile, thermosetting resins, polyamides, aliphatic and alicyclic amines, aromatic amines, carboxylic acids, carboxylic acid anhydrides, phenolics, polyalcohols and mixtures thereof.
5. Encapsulating material, in particular intended for encapsulating electronic components, at least comprising 40-65 % by weight of an engineering thermoplast and 60-35 %
by weight of a reactive solvent.
by weight of a reactive solvent.
6. Encapsulating material according to claim 5, wherein said material comprises at least 50-60 % by weight of an engineering thermoplast and 50-40 % by weight of a reactive solvent.
7. Electronic component, in particular an integrated circuit, provided with an encapsulation made of an encapsulating material according to claim 5 or 6.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL9402233A NL9402233A (en) | 1994-12-29 | 1994-12-29 | Method for encapsulating an electronic component, an electronic component thus encapsulated and plastic material intended therefor. |
| NL9402233 | 1994-12-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2166043A1 true CA2166043A1 (en) | 1996-06-30 |
Family
ID=19865082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002166043A Abandoned CA2166043A1 (en) | 1994-12-29 | 1995-12-22 | Process for encapsulating an electronic component, an electronic component thus encapsulated, and encapsulating material designed therefor |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US5895620A (en) |
| EP (1) | EP0720901B1 (en) |
| JP (1) | JP3126104B2 (en) |
| KR (1) | KR960026681A (en) |
| AT (1) | ATE180201T1 (en) |
| CA (1) | CA2166043A1 (en) |
| DE (1) | DE69509739T2 (en) |
| ES (1) | ES2133662T3 (en) |
| MX (1) | MX9600185A (en) |
| MY (1) | MY131688A (en) |
| NL (1) | NL9402233A (en) |
| RU (1) | RU2151447C1 (en) |
| SG (1) | SG35053A1 (en) |
| TW (1) | TW312843B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2768707B1 (en) * | 1997-09-22 | 1999-10-29 | Plastic Omnium Cie | TRANSPORT AND / OR COLLECTION DEVICE IN MOLDED PLASTIC MATERIAL COMPRISING AN IDENTIFICATION DEVICE AND MANUFACTURING METHOD |
| DE19841498C2 (en) * | 1998-09-10 | 2002-02-21 | Beru Ag | Method for producing an electronic component, in particular a Hall sensor |
| KR101185755B1 (en) | 2004-05-20 | 2012-09-27 | 알베마를 코포레이션 | Pelletized brominated anionic styrenic polymers and their preparation and use |
| US9202770B1 (en) | 2014-09-01 | 2015-12-01 | Freescale Semiconductor, Inc. | Non-homogeneous molding of packaged semiconductor devices |
| DE102017219020A1 (en) * | 2017-10-25 | 2019-04-25 | Volkswagen Aktiengesellschaft | Process for producing a finished component comprising an electronic element |
| KR102536941B1 (en) * | 2020-09-28 | 2023-05-26 | 한국전자통신연구원 | Method of fabricating semiconductor package |
| CN113644203B (en) * | 2021-08-09 | 2024-02-27 | 天津大学 | Organic solar cell based on thermoplastic elastomer and preparation method thereof |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3969461A (en) * | 1974-02-28 | 1976-07-13 | Western Electric Company, Inc. | Transfer molding thermosetting polymeric material |
| US3911075A (en) * | 1974-02-28 | 1975-10-07 | Western Electric Co | Transfer molding thermosetting polymeric material |
| US4327369A (en) * | 1979-08-06 | 1982-04-27 | Hi-Tech Industries, Inc. | Encapsulating moisture-proof coating |
| US4359831A (en) * | 1980-05-19 | 1982-11-23 | De Lorean Manufacturing Company | Reversibly powered rotary snow tiller |
| JPS5717153A (en) * | 1980-07-04 | 1982-01-28 | Asahi Glass Co Ltd | Sealing method of electronic parts |
| JPS57158271A (en) * | 1981-03-26 | 1982-09-30 | Showa Electric Wire & Cable Co Ltd | Film extrusion-coating resin composition |
| JPS5911360A (en) * | 1982-07-09 | 1984-01-20 | Toray Ind Inc | High-impact thermoplastic resin composition |
| US4528346A (en) * | 1982-09-17 | 1985-07-09 | Dainippun Ink and Chemicals, Inc. | Resin composition |
| FR2545653B1 (en) * | 1983-05-04 | 1986-06-06 | Pichot Michel | METHOD AND DEVICE FOR ENCAPSULATING INTEGRATED CIRCUITS |
| EP0151553A3 (en) * | 1984-02-03 | 1987-05-27 | Ciba-Geigy Ag | Epoxy-resin/polysulfone molding compounds for cured products with excellent humidity and cracking resistance |
| JPS6220555A (en) * | 1985-07-18 | 1987-01-29 | Mitsubishi Electric Corp | Epoxy resin composition |
| US4853442A (en) * | 1987-04-03 | 1989-08-01 | Hercules Incorporated | Amine-terminated polysulfone sulfide, useful as epoxy curing agent |
| JPS63289016A (en) * | 1987-05-22 | 1988-11-25 | Asahi Glass Co Ltd | Epoxy resin composition |
| US5364914A (en) * | 1988-10-05 | 1994-11-15 | Imperial Chemical Industries Plc | Moulding composition comprising a thermoset component and thermoplast component |
| US4972031A (en) * | 1988-10-05 | 1990-11-20 | Imperial Chemical Industries Plc | Plastic moulding composition comprising an uncured or partly cured thermoset resin precursor and a polyarylsulphone |
| US5326516A (en) * | 1989-10-03 | 1994-07-05 | Plasticolors, Inc. | Method of preparing a cured pigmented thermosetting polymer composition exhibiting improved color values and reduced haze |
| EP0545973A4 (en) * | 1990-08-27 | 1993-09-15 | E.I. Du Pont De Nemours And Company | Toughened thermoplastic polyester compositions |
| DE4140876C2 (en) * | 1991-12-11 | 1994-04-21 | Voith Gmbh J M | Roller press |
| US5443775A (en) * | 1992-05-08 | 1995-08-22 | Plasticolors, Inc. | Process for preparing pigmented thermoplastic polymer compositions and low shrinking thermosetting resin molding composition |
| EP0583224B1 (en) * | 1992-08-11 | 1999-01-20 | Hexcel Corporation | Thermosetting resins toughened with sulfone polymers |
-
1994
- 1994-12-29 NL NL9402233A patent/NL9402233A/en not_active Application Discontinuation
-
1995
- 1995-12-21 MY MYPI95004023A patent/MY131688A/en unknown
- 1995-12-22 CA CA002166043A patent/CA2166043A1/en not_active Abandoned
- 1995-12-25 JP JP07337400A patent/JP3126104B2/en not_active Expired - Fee Related
- 1995-12-26 TW TW084113863A patent/TW312843B/zh active
- 1995-12-27 KR KR1019950059470A patent/KR960026681A/en active IP Right Grant
- 1995-12-27 DE DE69509739T patent/DE69509739T2/en not_active Expired - Fee Related
- 1995-12-27 EP EP95203655A patent/EP0720901B1/en not_active Expired - Lifetime
- 1995-12-27 ES ES95203655T patent/ES2133662T3/en not_active Expired - Lifetime
- 1995-12-27 AT AT95203655T patent/ATE180201T1/en not_active IP Right Cessation
- 1995-12-28 RU RU95122410/28A patent/RU2151447C1/en active
- 1995-12-28 SG SG1995002387A patent/SG35053A1/en unknown
- 1995-12-29 US US08/581,132 patent/US5895620A/en not_active Expired - Fee Related
-
1996
- 1996-01-10 MX MX9600185A patent/MX9600185A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| ES2133662T3 (en) | 1999-09-16 |
| NL9402233A (en) | 1996-08-01 |
| RU2151447C1 (en) | 2000-06-20 |
| DE69509739D1 (en) | 1999-06-24 |
| EP0720901B1 (en) | 1999-05-19 |
| EP0720901A1 (en) | 1996-07-10 |
| JPH08274221A (en) | 1996-10-18 |
| DE69509739T2 (en) | 1999-10-21 |
| ATE180201T1 (en) | 1999-06-15 |
| MX9600185A (en) | 1997-01-31 |
| TW312843B (en) | 1997-08-11 |
| US5895620A (en) | 1999-04-20 |
| SG35053A1 (en) | 1997-02-01 |
| MY131688A (en) | 2007-08-30 |
| JP3126104B2 (en) | 2001-01-22 |
| KR960026681A (en) | 1996-07-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |