CA2149156A1 - Semiconductor Laser Having Integrated Waveguiding Lens - Google Patents

Semiconductor Laser Having Integrated Waveguiding Lens

Info

Publication number
CA2149156A1
CA2149156A1 CA2149156A CA2149156A CA2149156A1 CA 2149156 A1 CA2149156 A1 CA 2149156A1 CA 2149156 A CA2149156 A CA 2149156A CA 2149156 A CA2149156 A CA 2149156A CA 2149156 A1 CA2149156 A1 CA 2149156A1
Authority
CA
Canada
Prior art keywords
waveguide
lens
modes
laser
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2149156A
Other languages
French (fr)
Other versions
CA2149156C (en
Inventor
Kang-Yih Liou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Kang-Yih Liou
At&T Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kang-Yih Liou, At&T Corp. filed Critical Kang-Yih Liou
Publication of CA2149156A1 publication Critical patent/CA2149156A1/en
Application granted granted Critical
Publication of CA2149156C publication Critical patent/CA2149156C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0267Integrated focusing lens
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1025Extended cavities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer

Abstract

A semiconductor laser has been developed which is capable of efficiently transmitting a predetermined number of modes to an external fiber or waveguide. The laser includes an active gain region disposed in a laser cavity that is formed in a semiconductor material. A lens and a waveguide are also located in the laser cavity. The lens receives optical energy generated by the active gain region and directs this energy into one end of the waveguide. The waveguide transmits the optical energy from the laser to an external fiber or waveguide.
The waveguide may be either a single mode waveguide or a multimode waveguide that selects a predetermined number of modes from among all the modes generated by the active region. If a single mode waveguide is employed, the output energy is composed of the fundamental frequency generated by the active region. If a multimode waveguide is employed, the output energy is composed of the predetermined modes selected by the waveguide.
CA002149156A 1994-06-30 1995-05-11 Semiconductor laser having integrated waveguiding lens Expired - Fee Related CA2149156C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/268,896 US5517517A (en) 1994-06-30 1994-06-30 Semiconductor laser having integrated waveguiding lens
US268,896 1994-06-30

Publications (2)

Publication Number Publication Date
CA2149156A1 true CA2149156A1 (en) 1995-12-31
CA2149156C CA2149156C (en) 1999-11-02

Family

ID=23024978

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002149156A Expired - Fee Related CA2149156C (en) 1994-06-30 1995-05-11 Semiconductor laser having integrated waveguiding lens

Country Status (5)

Country Link
US (1) US5517517A (en)
EP (1) EP0690533B1 (en)
JP (1) JPH08130348A (en)
CA (1) CA2149156C (en)
DE (1) DE69505900T2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5392308A (en) 1993-01-07 1995-02-21 Sdl, Inc. Semiconductor laser with integral spatial mode filter
GB9425729D0 (en) * 1994-09-14 1995-02-22 British Telecomm Otical device
US6075801A (en) * 1995-01-18 2000-06-13 Nec Corporation Semiconductor laser with wide side of tapered light gain region
US5760939A (en) * 1995-10-23 1998-06-02 Sdl, Inc. Optical transmission link capable of high temperature operation without cooling with an optical receiver module having temperature independent sensitivity performance and optical transmitter module with laser diode source
FR2754400A1 (en) * 1996-10-07 1998-04-10 Commissariat Energie Atomique Fibre Optic Laser Drive method for Microlasers
US6014396A (en) * 1997-09-05 2000-01-11 Sdl, Inc. Flared semiconductor optoelectronic device
US6122299A (en) * 1997-12-31 2000-09-19 Sdl, Inc. Angled distributed reflector optical device with enhanced light confinement
US7006744B2 (en) * 2000-10-27 2006-02-28 Pirelli Cavi E Sistemi S.P.A. Hybrid buried/ridge planar waveguides
US6944192B2 (en) * 2001-03-14 2005-09-13 Corning Incorporated Planar laser
DE10130335C1 (en) * 2001-06-26 2003-02-13 Zf Lemfoerder Metallwaren Ag Locking and unlocking mechanism with electromagnet
US20030021314A1 (en) * 2001-07-27 2003-01-30 The Furukawa Electric Co, Ltd. Distributed bragg reflector semiconductor laser suitable for use in an optical amplifier
DE10144826B4 (en) * 2001-09-12 2007-03-08 Forschungsverbund Berlin E.V. Process for the production of surface emitting semiconductor devices and surface emitting semiconductor device
GB2396054B (en) * 2002-11-20 2006-01-11 Intense Photonics Ltd Semiconductor optical device with beam focusing
KR100989850B1 (en) * 2008-07-16 2010-10-29 한국전자통신연구원 Semiconductor Laser Diode Having Waveguide Lens
US9166369B2 (en) 2013-04-09 2015-10-20 Nlight Photonics Corporation Flared laser oscillator waveguide
WO2015002683A2 (en) 2013-04-09 2015-01-08 Nlight Photonics Corporation Diode laser packages with flared laser oscillator waveguides
US10186836B2 (en) 2014-10-10 2019-01-22 Nlight, Inc. Multiple flared laser oscillator waveguide
US10270224B2 (en) 2015-06-04 2019-04-23 Nlight, Inc. Angled DBR-grating laser/amplifier with one or more mode-hopping regions
CN114006263B (en) * 2021-10-28 2023-09-05 中国科学院半导体研究所 Silicon-based integrated external cavity narrow linewidth laser

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667331A (en) * 1984-01-20 1987-05-19 At&T Company And At&T Bell Laboratories Composite cavity laser utilizing an intra-cavity electrooptic waveguide device
US4794608A (en) * 1984-03-06 1988-12-27 Matsushita Electric Inductrial Co., Ltd. Semiconductor laser device
JP2532449B2 (en) * 1987-03-27 1996-09-11 株式会社日立製作所 Semiconductor laser device
US4815084A (en) * 1987-05-20 1989-03-21 Spectra Diode Laboratories, Inc. Semiconductor laser with integrated optical elements
GB2225482B (en) * 1988-11-23 1992-10-14 Stc Plc Multichannel cavity laser
US4935939A (en) * 1989-05-24 1990-06-19 Liau Zong Long Surface emitting laser with monolithic integrated lens
JPH0376294A (en) * 1989-08-18 1991-04-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor optical amplification device
JPH03119782A (en) * 1989-10-02 1991-05-22 Fujitsu Ltd Optical semiconductor device
US5003550A (en) * 1990-03-09 1991-03-26 Spectra Diode Laboratories, Inc. Integrated laser-amplifier with steerable beam
US5228049A (en) * 1991-08-27 1993-07-13 Xerox Corporation Beam control in integrated diode laser and power amplifier
US5260822A (en) * 1992-01-31 1993-11-09 Massachusetts Institute Of Technology Tapered semiconductor laser gain structure with cavity spoiling grooves

Also Published As

Publication number Publication date
JPH08130348A (en) 1996-05-21
DE69505900T2 (en) 1999-05-12
EP0690533A1 (en) 1996-01-03
DE69505900D1 (en) 1998-12-17
CA2149156C (en) 1999-11-02
EP0690533B1 (en) 1998-11-11
US5517517A (en) 1996-05-14

Similar Documents

Publication Publication Date Title
CA2149156A1 (en) Semiconductor Laser Having Integrated Waveguiding Lens
WO1992011554A3 (en) Intensity dividing device
CA2133235A1 (en) Reflective Digitally Tunable Laser
CA2092589A1 (en) Article comprising an optical fiber laser
CA2096420A1 (en) Optical device
WO1996027223A3 (en) Polarized fiber laser source
CA2212736A1 (en) A laser
CA2176027A1 (en) Optical Filter
CA2154018A1 (en) Digitally-tuned integrated laser with multi-frequency operation
ES2155961T3 (en) OPTICAL SYSTEM WITH ONE OR MORE STABILIZED LASER SIGNAL SOURCES.
GB2317744B (en) Improvements in and relating to lasers
CA2173662A1 (en) Rare earth element-doped optical fiber amplifier
EP1130717A3 (en) Semiconductor laser light source with external cavity
EP0342774A3 (en) Active optical fibre star coupler
DE3785610T2 (en) OPTICALLY CONTROLLED SELECTOR.
JPS5727211A (en) Fiber mode scrambler
JPS55115008A (en) Semiconductor laser coupler
JPS5569115A (en) Optical coupling device
WO2001015287A3 (en) Semiconductor laser
SE7902823L (en) RINGLASER GYROSCOPE
EP0347233A3 (en) Integrated optic devices
Laven High-power Cerenkov maser oscillator
US6832021B2 (en) Configuration for coupling radiation into an optical fiber
KANG-YIH Semiconductor laser having integrated waveguiding lens
WO1999027619A3 (en) Multi-mode fiber lasers

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed