CA2101142A1 - Cleaning by cavitation in liquefied gas - Google Patents

Cleaning by cavitation in liquefied gas

Info

Publication number
CA2101142A1
CA2101142A1 CA002101142A CA2101142A CA2101142A1 CA 2101142 A1 CA2101142 A1 CA 2101142A1 CA 002101142 A CA002101142 A CA 002101142A CA 2101142 A CA2101142 A CA 2101142A CA 2101142 A1 CA2101142 A1 CA 2101142A1
Authority
CA
Canada
Prior art keywords
gas
chamber
cavitation
undesired material
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002101142A
Other languages
French (fr)
Inventor
Sidney C. Chao
Edna M. Purer
Thomas B. Stanford
Carl W. Townsend
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25454731&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CA2101142(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of CA2101142A1 publication Critical patent/CA2101142A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • DTEXTILES; PAPER
    • D06TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06FLAUNDERING, DRYING, IRONING, PRESSING OR FOLDING TEXTILE ARTICLES
    • D06F19/00Washing machines using vibrations for washing purposes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/02Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
    • B08B7/026Using sound waves
    • B08B7/028Using ultrasounds
    • DTEXTILES; PAPER
    • D06TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06FLAUNDERING, DRYING, IRONING, PRESSING OR FOLDING TEXTILE ARTICLES
    • D06F43/00Dry-cleaning apparatus or methods using volatile solvents
    • D06F43/007Dry cleaning methods
    • DTEXTILES; PAPER
    • D06TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06FLAUNDERING, DRYING, IRONING, PRESSING OR FOLDING TEXTILE ARTICLES
    • D06F43/00Dry-cleaning apparatus or methods using volatile solvents
    • D06F43/08Associated apparatus for handling and recovering the solvents
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/26Cleaning or polishing of the conductive pattern

Abstract

CLEANING BY CAVITATION IN LIQUEFIED GAS

ABSTRACT OF THE DISCLOSURE
Undesired material is removed from a chosen substrate (28) by a process comprising the steps of (a) placing the substrate containing the undesired material in a cleaning chamber (12) provided with cavitation-producing means (16, 36, 52); (b) introducing a liquefied gas, such as liquid carbon dioxide, into the cleaning chamber and contacting the substrate containing the undesired material with the liquid carbon dioxide at a temperature below its critical temperature; and (c) exposing the liquid carbon dioxide to the cavitation-producing means for a period of time suffi-cient to remove the undesired material form the substrate.
The substrate containing the undesired material may option-ally be contacted with carbon dioxide in the dense phase prior to and/or after the cavitation treatment to aid in removal of the undesired material. Further, spend liquid carbon dioxide may be treated to regenerate fresh liquid carbon dioxide which is recycled to the cleaning chamber.
Other gases besides carbon dioxide which may be used in-clude nitrous oxide, sulfur hexafluoride, and xenon.

Description

C~, ~S C~ANI2~G ~Y C~.A~!SOtll ~ QU~ sV ~W

a~c~52y~ 0~ ~1~ SNV~NTIOll 10 ~
~ nt ~ro~ o~ ~lat~ to th~ o~ caYlt~tloa to elo~ ~ tr~t~ tlaul~ , 'co pr~
~ploy~g l~ ~-d gaJ, ~uch aJ l~uld c~boa dlo~cldo, 1 co~b}.n~t~on ~it~ a~t~t~OI~ to oe~h~G- th ~ of lS ~d~ ~rarlety of ~ub~t~ateo, lDc~udi~g co~ x Jultorl~lJ ua~l ~o.

l~ltra~o~c clean1~g h~ bec~a utlll~ r lndu~t~r tor 20 a nu~r o~ year~. $~ th~ co~vellt~onal ~wo~os, t~lO o~
leatlAg ~ orga~a ~olYe~t~, w t-r, o~ aq~-ou~ o~-tlon~ sd ~ o~ n rg~ ppl~-d to t}, ~ eO
pro~ot~ r3.tatlo~ ~e ~or~tlo~ o~ bu~
tb~ egue~t coll~p~e~ Altho~gh ad~*aat6 for t~ on-25 ~catlo~ c1~g, both ty~ o~ so1V~t~ v~ d~tag~-. ~y ~tro.te~ ~r~ a r1go~ou~ drying p~oca~
fo110~g ~posu~e to ~ ou~ ~, and thi~ i- oft~n a t~-co~s~g thon~l ~cur-~o~. ~ U~8 0~ orqa~e ~o1ve~t~ o~c~ti~g ~ prese~t~ t~ ~roble~ of ch~
30 ica1 di~ al ~d 1~ ect to ~lct seg~1~tory co~tro~
~ S10ll~1 d~ad~J~t~g- r~1~t~ to ~dl~ng of tho ~
red co~tas~t~ otl~er org~ic or p~¢u1at~ a 'che co~t~ a co~tsoll~ at~r~ c~ ~- a act~r~ p~t1c10, o~ce in ~o1~t~o~l or u~ lo~, it- ~o1 3~ t~tia11~r lnc~ d, ~d th~- p~e~e~t~ a~ additio~1 pr~ at~e~t~di~po~a1 p~ob1esl.
S~ tha~ con~ntlonal ~lt~o~c Gleani~ ~roc~
~OI~lC b~o~s~8 aro ofte~ us~d ts prodaco th ~on~c ~n~rg~
oth~r proc~ cav~tat~o~ l~ozz10 ~a~ be u~d. For 2~02~ 2 - ~P1~ P~tOnt ~ t6~387~ U~ ~h ~ SJ~
J. P~ for ~M~tho~l for E~ ng Osldlz~l- Cont~,lAnt-in Cool~g W~t~ in t~on~unctlon ~th ~oolldg ~
~d ~.8. ~t-~t ~o. ~,990,260, l~u~d F-bru~ 5, 1991, to S J. P~OA~ for ~ thod u~d Ap~ratu~ for a~lloYing O~ldlzabl-Cont~ntJ l~ l~at~r to Ac~ e ~gb ~urlty S~at-r for In-du-trl~ J o~ clo~o ~otbod~ for rs~r~ cont~t-~ro~ ~rator by lndu¢l~g c~vlt~t$on ~ tho ~t-r to ca~- tho wator to dios~:~ato to l~roduco hyd~oxyl f~e-r~d~cal~ ~ich 10 ACt a~ ng ag-nt~. ~ tbo ~roc~ of P1~aD~
tra~riol-t rad~t~o~ ~ ssod ~ co~l~at~o~ ~lt~ t~o~
to co~t~- t~a o~datlon proce~ ~hld ~# ~nitl4ted ~q th~ hydroxyl ~r~o-radlc~l-. $h- cav~tatlo~ ln tbo Pi~a~l proce~ produc~d ~y a ^crit~cal flo~ ~ozzle.
Anoth-r typ- of cle~ proce~ tll~s~sg ~ o ~$ftl~q of de~se pha~o p~e~, ha- b~ dl w lo~-d ~nd cla~d ~a ~.8. P~t-~t ~o. S,01~,366, l~ued to D.i. ~ac~-50~ t al ~nd a--~g~-d to t~o ~ame ~-~ign- ~ tb~ ~r-~-nt appl~atio~. Th- proC~ qploys a de~- ph~- 9~ ~t o~
abo~ th~ critical pre~uro. Th- pha-- of tho de~- pha~-g~ thon h~ftod ~t~n-~ th llqu~d tat- ~nd th superc~itical ~tate bq ~ry~ th temp~r~tur- of th d~o fluid i~ ~ sorio- of top~ b t~ -~ tC~F-r~ture~ ~bo~ and b lo~ th cr~tlc~l to~par~t~r~ of tho d ~ id, ~hlle 2S Da~ntalnin~ tho pr~-~ur bovo t~- ¢rlt~c~l ~ lu . B~a~
pl-~ o~ fluld ~Dclud ~1) bydroc-r~o~ u~h ~ thano, thana, propa~o, butauo, poDt~ ~ h xane, ethyl-~ nd propyle~ 2) halogeDated ~ydroc~rbon~ ch a- t-trafl~
ororeth~o, chlorod~fl~oro~etha~c, ~na p rfl~oropro~
(3) lnorg~A~cJ, ucb a- car~o~ d~ox~d , ~o~, hell~, ~npto~, argo~, ~ulfur h~a~luo~ld , and n~trou- o~ldo~ nd ~ tur-~ th-r o~ alt-r~-ti~o e~bot1 ~st~, th dens- p~a~- ga- ~ay be expo~od to ultraviolot ~V) rad~a-tio~ durlng the clea~ng proce~ or ~ltra-onlc ~n~rgy ~ay 35 be appll~d d~r~g th- cl-~nlng procee~ to aqltat~ tb- den~e pha~- gar ~nd th- ~ub~trae- ~urf~c-.
. .
-21 ~ 2 ~ Ihllo t~i~ proce~ ult~d o~ it~ lnt--nd-d purpo~ t iJ deslr~u to ~?ro~ urt~or ~ro~ #nt~ ~n ~ucl~ cleanl~g proce~-, ~ploy~ng l~exp~ , no~tox~c cl~a~lng ~ ln a sl~lpl~l~ proce~.
S

ac:corda~co ~th tho ~Ye~tlo~, ~do~ t-rial !roD~ a G~IOJ~ trat~ proco~ c~rl~
10 th- ~tQp9 O~ ~) p~4C~llg th~ e co~t~ th ~d -o~t~r~ a cl~a~g oh~er ~ov~d~d ~th c~
tlo~-pYod~cl~g ~e~n~ ) ~troduc~q ~to th~ ~:lo~i cba~ a llq~lafled ~a~ for~d by ~pplyl~ ro~
about 100 ~tmosph-r~ ~103.3 lSg/c~2) or le-~ t a te3~
15 t~ of l~ tb.a~ ~bout SO-C to ~ ~$ect~ ~a~ o~tact-i~g th~ ~u~trato coAtal~g t~- ~dos~ at~x~l ~ith t~o liq~ d ~a~ at ~ t~pe~tur~ t- c~itic~l te~-p~rat~ c) ~xpo~i~g t~o llgu~f~-~l p8 to th~ ca~t~-t1on-produc~nq ~ fo~ riod o~ t~ ~uf~c~e3t to r~-20 ~o th~ u~d~rod ~at~rlal f~Q~ th~ r-Lt .
~ gu~ carbo~ dlo~o ~COa) $~ o~toacl¢
~ubsta~co. ~h- clea~q proce~ llzl~g liq~d CO2 1 r~latl~ely ~i~pl-~ ~Dd co~t~n~t- tak~ d CO2 a~e ~11y re~oY-d thoref~ uc:~ a~ ~ d~c~pr ~8~0~ of 25 tl~ ~ r L~y ~ tio~ o~ co~l~t~ o~ e two.
ltak~ uefl~ q~5 FIG. 1 ~ a cut-a~ay ~e~r of on~ ~:10~n~ ,tess~
ploy~ ~ t~e prac~l~c~ of th- ~ve~t$on ~ ~ ch tho CaQi-t~tio~ a ~o~c~tiDg bo~ placed at t~e top of t}~-G~ g o~
~SG. 2 ~ a cllt-o,way ~ri~ o~ a f~r~t o.lt~
clea~g ~ el ~h~c~ e ~ploy~ t~ pr~ e~ o~
th- inv~ntio~ b~eh o~ son~icat~ ho~ 1~ pl~cod ~ch of th- top ~ ott~ of th~ alea-l~g ch~r~ ~nd - - .. . .. . .. ..

' : . ~. ' ' .' ~ .: ' ~10 ~ s ~
FIG 3 i~ a cut away view of a portion of ~ ~econd alternative cleaning ve3sel whieh may be employed in the practice of the invontio~, ln whlch the ea~itation mean~
comprise~ multiple cavitation nozzle~
t DESCRIPTION O.F Tl~ PRISF8~D EMBODIM131~TS

In accordanee with the pre~nt inventlon, p~t~culato~
and organie filmJ can be removed from solid aurfaeea by utilizing eavitstion, whieh i- used heroin to ~ean tho formation of bubble- or ea~ltle~ in ~ liqult, followot by the collaps~ of the~e bubble-. The no~el aspeet of the proee~s i- the nature of tbe mediu~ u~eds a ~lected liq-uefied gas, whieh 1~ u~ed at a temperature below its crlt-ieal temperature.
The liquefied gas used in the praetiee of the present invention i- cho~en to be a ga- whieh ean b liquefied un-der derate eondltiona of temporature and pre--ure, typi-eally, for praetleal purpo-e~, a pre~ure of le88 than about 100 Atmosphere- (103.3 ~g/em2) and a temperatur~ of about 50-C or le~ In addition, for practieal purpo~e-, it i~ de-irable that the ga~ i~ al-o non-toxie, non-flamma-ble, and doe~ not cau-e a~y damage to the ~nvironment.
Ga~e~ whieh are ~uitable for praetieing tho pre~ent inven-tion inelude, but are not li ited to, car~on dioxide, ni-trou- oxide ~N2O), ulfur hexafluoride (SF6), and xenon, with c~rbon dioxide b~ing t pref-rr~d. In the following di~eu~ion-, carbon ~oxit- i- u-ed a- An xaepl- of on~
ga~ which may b~ u~ed in praetieing the pre-ent inventio~, but it i~ to b~ under-tood that the inveDtion i~ not 80 li~itod.
Càrbon dioxido i~ a~ unl~m;ted, inexpen-ive, nonto~ie, and ea-ily liquefiabl- Datural ro~ource. Oneo liquefied, it offor~ a good, low ~i~co~ity onie~ting ~ediu~, at rola-tively low pre--ure- (about 600 to 1,0~0 pound- per ~qu~re ineh, or about ~2.2 to 73.1 ~g/cm2) and d ld temperatures (about 10- to 30-C). She~e v~lue~ ar- below the eritic~l ...., i . .
., pr~ur- ot ~5.~ ~g~ nd th~ cr~tle~l t-~r~tur- of 3 for CO~.
l!h- c~lt~t~on ffect required in t~- s~r~ctico of the p~ nt l~ tio~ IDay b- produced by ~ean- ~uch ~ ~ tr~
S ~ucor th~t produce~ ~nergy ha~rlAg a frffp~ncy o~ pref-r~ly about 5 t~ 100 ~loh-rt~. Os~ ~x~pl- of ~uc~ tr~du~-~~J ~ouicating ~on~ cri~d ~ ~th r d~t~l ~
r~f-r~nco to ~I6S. 1 ~ d 2. I~ u~ ale-r~ t~ t of tbo ~ t ~nvent~o~, tho c~1tatlon ~y ~ produc~d ~y u-ing ~ k~n c~t~t~o~ ~cr~tlcal flo~' no~ di~-clo~-d, ~or ~x~p~ .S. ~a~ent ~o. ~,9go,a60 to J. Pl-~an~, tho CoDto~t~ O~ ~hlc~ aro h-r-b~ ~corpor~t-~ ~y r~-~r~nc-. S~ ~ucb ~ c~t~t~on no2~1-, a bubblo lr cre-t-d 1~ th~ liquid by loweri~g the hydrody~a~le ~r --ur- ot th 1~qu~d ~olo~ tho va~or ~ro--ur- ot th- llquld. Th bu~bl-o for~d then aoll-p~ he~ t~e Qro~-uro~ qul~lbr~t-.
~Si~ co~1~p~- produc-- ~ory ~lgh pr~ s-- t~ t, 1~ t~r~, prod~e~ hock w~ve~. 5hl~ ~1t-r~ati~ o~i~ont of tbo pr~o~t lnv~nt~oa i- de-cr~b~d f~rthor ~lt~ ~-f-r-~c- to 20 ~G. 3, ~h~ch chow~ u~ ~rray of ca~it-tio~ ~oz-lo-. Alt-r-nati~ th c~ltatlon ff ct r-quired i~ tho ~ractlo- o~
tho Qro t i~ve~tio~ ~ay bo ~roducod bq prop~ r or blad~, a~ 1~ kno~ th- art.
~C. 1 d pict~ xtr-ctor~cl~ ninq ~e-~Ql 10 u~t-~bly ~ployed ~A tho ~ractlco o~ tbc l~ve~lon. ~h~ c1-u~-~ng ~o~ol lO ~o~pd--~ a ~ ll-d c1-~nlDg cba-b r 12 fo~Ded of u~ approprlat- ~t~rl-1, ueh a- ~t ln1e~- t~ nd provltot Y~th ~all- of ~ uf f ~¢l~nt tblc~o~ to ~th~tand tha pre~r~ e~ployed ~ t~o proce~. Th~ cle~lng ch~
30 b~r ~2 ~ ~id~ ~ith a lid ~ o of w:h ~uff~cl~t thic~ b~ cl~ g cb~r 12 ~- f~h~r pro~
~tl~ itat~on ~e~ co~r~ing ~ ~o~c-.ti~g ~o~ 16, whlch 1~ tod b~ duc~r lt ~r~tb. or ~tho~t ~
boo~tor). ~ ~o~ t~g bo~ lC ~ ao~'c~ 3~ tho cle~-35 ln~ cb~r 12 at ~t- ~o~l ~o~t, to allo~ eff~c~ t tran~er ~f the ~on~c ener~ to t1~e l~uld CO~. Tl~ ~os~
16 ~ay ~ ~t-t 1~ th- to~ ha~ in ~IG. 1, i~ both 2 ~

th~ top ~d tho botto~, a- ~ho~m 1LI FIG. 2, ~ t~- botto~, or on th- it-~) of tl~- c:le~g cAa~ 12. alter~ r -ly, the bor~ls) 16 ~nd t~dllc~ ay both be 10~t-d ~ntlr-1~ w~ n th~ c1~ 3g c~e~ 12. Th~ ts~duc~r ~-S e~rgl2~ ~y ~ generator 20, u~w~r~ ~- (not ~hown) .
~he ~l~rf~co ~rea of ~h hor~ 16 (o~ ~y of ~or~
the ~l-t~c- of t~- ho~ fro~ the ~ trat~ t~
g~n~r~tor p~r ~nd t~sduc~r oper~t~on~l fr~-ncl~
10 dep~-At o~ the ~rtic~l~ aontad~e~ etr~tc~ ~-~ng tr~t~. G-n~r~ r, placl~g t~ hor~ ~C c1O~ to t~
t~ ~d d~o~sa~g th horn ~ Qlt ~ ~
into~ BO~le: agitatlo~ crea~ t~ bora ~ ~11 r -~ult ~ ~ lo~r g~t~tion l~ icb 1~ t o~r~r -15 1 OEr ~-T~- cloan~lg c~or 12 1~ furt~-r ~orld~d ~th C02 inl-t ~ 22 ~nd outl-t ~an~ 24. C~t~onall~ t~rr~
26 ~ t;~ t~ 11guld ~ oAlc-t10n ord-r to ~alnt~ln a ~ t~tlall~ un~or~ ta~ at~, ~1, ~a~c-, ~do~ ~il1bri~ co~ t10n~ pr~ d t-r-tb~ t~peratu~ t~tlall~ o~ pr~
to bo ¢l~ ¢~te~ ~t 2~ u~
~ ~ a ~ .to holdc~, uch a~ ~-lt t 30, ~ thu- ~y b~ co~t~cte~ ~y C02 Sor r~val of ~d~r~d ~t~r~l.
2S Ad~tlo~lly, th cl-a~g ch~r ~ iAco~por~t- :
tsr~l r~d-tanc- h~t~g ole~t 31, ext-~l cool~
j~c~cot 32, nd then~ocoupl- ~oll 33 ~h~:h as ~ to ~
~a~ th~ rogu~r d te~r~t~ th cl~ ~r. S~ - -t~ prc~ure g~l~g- (or pres-~ tr~a~c~) 3g ~ay 30 ~ ~d to det~ e ~d control th ~ ln tbe el~
~q ch~ 12 . ~I!h- cleu~lDq chu~ 12 ~y ~pt~o~ally : -h~Y~ wt show~) to ~ccod~t ~ e~ al l~
1Q~1 ~dlcator (not ~ho~m) to lndlcat- tb~o 1-~-1 o~
C2 ~ ch~r 1~.
Sb~ p~ra~t-r- o~ ~on~catlon ~clu~ t~ e~tu~e ~d pro~ o~ th l~ and th ~oD~cat~g~ conditio~s ~`
lfroq~o~q, t~ of ~on~c-t~on, ~tc.~ ca~ iox~

, . . . , , :, . .: , ,, :, . " ,,, . - ., . ~

2~a1 1~-12 or otb~r ga~ t b~ tt~ t~t~ nc-, 'cho p r~tu~- ~d ~r--Jur~ t ~ tb triple polnt ~
-57-C ~t 75 pou~d- por ~ re lncb, or 5.3 l~gtc~ for COI) .
Purth~n~or-, ~h- te~r~turo ~-e ~ tb- ~lt~c~l S temp~ratur~ pre~u~- ~ay ~ olth~r ~ o~ bolo~
crlt~eal pr~Jur-, but ~o~ ~o ~g~ t nDle a~ tatloll lo pro~ t~l. C~rlt~tlon ~rould ~o ~od-t ae pre--ur-- ~out 200 p~l (14.1 ~9/~) ~r- tb- ~tur~l ~ ~r p~ t ~ gl~r~ te~r~t~
Pro2~r~1y, the t~r~t~- ra~-~ bout 18-C to just ~lo~ t~- crlt~al ~lu, i~¢- th al-aD~g p-r~o~-D~ce d~r~ r 18-C ~d ~o~ tbo ¢rlt~cal ~lu-.
~nd r ~a~1~ co~d~t1--n~, th p~ ~o 1~ fl~
te~ratn thue p~2ab1y r~ ~ rr ~t 820 lS pound~ p~ ~are lDch ~xmt 57.7 ~q/c~) to ~t b la~ tho crit~ - fo~ earbo~ ~o~da.
~he ~r~ t proc~ doo~ wt a~r to ~e~d o~
~tiGnl~lr nltratc~e froquon~, ~ ~y Or ~ re~
ly a~ 71e appar~t~- ~y be ~d. Co~sci l ~ o~lc g~Der~'tos~ t~pic~lly opsr~ta at ~ freq~ cy of ~bo~t 20 to 90 ~llo~ , a~t th~ q-nerato~ ~t~goo~-ly o~
ployod 1~ t~o pr~otlc- of th pr --~t l~tloA. .
pllt~o of t~o ro~ Ya~o c~ z~ge fro~ a~t : :
~0 to 220 a~crc~tore. 819~-r ~pllt~d ~ ~111 z-~lt gzeat-r Jc~biAg ~ for )~d-to-r~ ~rtic~l~t~
I.4WBZ ~plitud ~ ~y ~ rqulsod to ~t br ~ag~ of fr~gf1e ~tr~t~.
ID OPer t~OD~ th ~1-- 2~ tO ~ C~ ~trO--dUCCd ~tO t~ Ch~ Ch~r 12. ~lguld ~ th n ~-trOdUCe~ ~tO t~ C1~an~g Cha~r 12 tbrOUg~ t 22 fr~
a ~O~rC~ hOW~ r COI~trO~ O~IItiOUr Of f1O~r rat~ t~r~t~r, a~ Pr~ DOm ~ tl~
q!he 1 trOdUC- I ~t ~ tea~r~tUZO ~1O~ t~O
cr~t~ lu ~or CO~,, o,c ~n~c~t~ ~. T~per~t~ c~
3S b~ co~t~oll~ it~r ~ fllll~q t.h~ ¢hu~s ~ pr--heat~
or cool~ uid C02 or l~y h ~ti~g or coo~ t~ c~r.
Ros~ll~, t~- pre~ 1 be fl.~ y th~ v~por ~r-~

2 :~ 9 ~

of t 2 at ~ giv~n t~peratur-. lt ~y b~ to~lr~ u ~o~
ca~ to pro~ld- incroa-ffl pr~ur~ l~a ord ~ to prod~uc~
~nore ~rlqorou8 ca~itatlon. ~o ~xo~ld- th~ ~d~tlo~ re--~ur~ a no~contQD~lbl- ga~ a q-~ ~ia~ not llq-S uofl-d ~t th- te9~r~tu~o ~ ch th- ~oc-~- o~ th- ~-~r~l~tion i~ co~duct~ ch ~- ~trogo~ trod~c~
to th- oha~r by ~a~- of . cwpr~or o~ ~lgh ~re~
ga- c~l~d r. Additio~ re~ o c~ ~l~o ~ ~ovid~l ~y flllll~g tl~ ¢ha~ co~et~ly ~11 o~ l~d ~0~ ~a eon-10 troll3,~g th~ pr~ of t~ I~lot or o~tl t ~t~e-~.
So~cat~ou i- thon ~pl~ t th- abo~-~c~td f~e-cy ~d uq?litudo. ~!h t~ of ~ tla~ 1- d ~l~dQnt o~ th~ ~art~c~l~ 6~1- b~l~S s:l~ ~ th~ l~at~ o th~ u~ d ~t-r~al, or co~t~n~t, to ~ ra~.
7~ D~ o~ot ~ ~posP~ t.~ O~c-t~Q~ fo~ prolo~ged perio~ of t~ th otS r b~, ea~ at-x~-~1~ ta~c loDg-s to ~8 t~ oth~r-. S~lo ~ori~nt~-tio~ ~11 d t~ o opti~ ti~ for ~o~c~t~o~ to ro~
~t~t~ll~r all cont~n~t~ g~ onica~ol~ for 20 At lel--t ~out 30 ~con~ x~ctod to r~o ~ t~-t~l ~OU~It of th cont~i~t~tJ, ~ ~ o~ o~oln: 5 ~n~to~ ~ly ~ e c~ c~eYor, u~
c~ c~t~nce~, ~v~ furt~ r ~o~c-tlo~ ~y ~ ro-qu~, ~o~ tho rea~o~ t~totl a~ .
2~ as th- coopl~tio~l of t~ ~oD~c~tlo~ cyel~ id C02 p~rg- 1- ~lti~tod. ~olla~g tl~o p~rqo t~, th~ ch~er CA~ ~ do-prs--ed for ro~r~l of t~ ~pl, or, th~
cleanl~g t~p cu~ b~ re~te~ r~ d. To det~n~3~ 1~
tho ~ple 1~ ~ff~ tly cl~, v~su~ p~Ct~o~ of tb-30 ~ t- or ~a~r~entJ of ~ lat~ co~ ntrat~o~
~d~o~ p~ c~ of org~nlc f~l~s s~y ~# ~d, ~- ~ppro~
p~ at-.
~ J~ a ~th r ~bod~ant of tl~e ~r~tlo~l, th~ ~le~
2~ to b- cl-an d a~ d~ i~ the cl~ c~r ~, 35 wh~ clo~ urged ~t~ ga- for ~ pre~-t~-~ed pr~o~ o~ t~. S~ cha~ z-~lz~d ~I heat-to ~ ~lt~ arltics~l l~ol ~ic~ i~ det~r~n~

.

2 1 ~ 2 the ~ lc cont~lnan'.- an~ ~ub~tr~t--, t~ r~ '.,h~
bulk of t~ ~r~nlc cont~-l~t~on. S~clflc~lly, both t~o pressur~ ~ tc~poraturo aro ad~u~ted to oxceo~l th cr~t~-cal ~aluo~ ~or CO~. ~he ~npl- ~ expo~ to CO2 ~ ~:h-5 den~o~ o~ ~up~rcr~t~c~l, p~la3~ for a ~r~.l of t3~e ~hlcb1~ ~ufflcloat to d~Jo~ cOI~ta~r~ t- ~h~c~ ol~
u~rcr~tic-l CO~ ~r~f-rr-d to h-r~n ~ ol~lo collt~-n~l~t~
~h- te~oraturo ~ th ~ reduo~l ~lo~ c~t~c~l 10 ~r~lue to liqu ~y th- C02. So~t~c~tla~ o~ t~ ll~ld CO~ 1-i~iti~t-d to r~ove ~tic~l-,te- ~d/or o~qu~l fll~ co~-ta~natlo~ ~ic~ i- dlff~ lt to ~o~, A- d~cril~ed abovo. q!~- tep- o~ 'croat~eDt by ~o~ic~tio~ ~ tr at~t ~th ~u~?srcr~t~c~l C02 ~y 2~o ro~eat~l - ~ t~
requi~l to cloa~ e ~ple.
Tn anoth r ~bodl~n~ of th- ln~ ntlon, t~ ~l~ to ol~n~ ~e troat~l in ~ccordanc~ o ~roco-- o~
th~ ~re~t ~v-nt~ o~ a~d a~o ~ gue~tl~ ct-ll to den~e pha-- q~- cl~ g by r~pr-~url~g ~d r~ ~t~g the C02 to ~up~r~:ri1:ic~ co~dltlon~ tep procQ~-~- u~e~ul, for ~pl-, to r~ os~ct ~l~t~e- of p r-t~c~ te~ ~d ~olubl- co~tu~i~t-. ~ t-p of t~o~t~os~t w~th up~rer~t~c~ ~ tr-at~t ~y oll~c~tion ~y rep~at~ ~ ~ny ti~ ~ r~uirod to cl-~ t~ ~p1-.
2S I~ ~oth r ~d~nt o th pr~ t ~no~tlo~, clo~ot 100p, r-c~ ti~g 11gu~d C03 re~ n rat~ ~y-t~
~- ~loq~ h3~h t~ re~ovQd co~t~t~ ~ th~t orga~e or p~tieu1at-) eu~ ~ ~eadil~ ep r~t-d fro~ th-ea~ltatio~ . ~- ¢~ ~o ~ceoepl~hed ~th r ~y d -co~pr~ o~, fi1tr~tlo~l, or a Co~tiOl~ of ~oth. ~y t~
d~o~rs~o~ of t2~ id C02, ~eou- C02 ~- fon~ ~Dd the ~o~ta~t~ -~Ato out in eo~co~tr t~ fos~ th~t for ea~y ~poJa1. Th- e1ea~ gA~ CO;~ reDalni~g 1J tllen r~co~e~-ed to t~c liq~ld tate ~ th e1~u~ liq-u~l C02 1~ to~ to th clea~ ch~ 12. To ~-¢o~1~ proco--~ t~ 11quef~od g~- co~talAi~g t}~
cont~ln~t~ i- tr~n~ortod out o~ tho chu~r 12 th~oug~

outlot ~e~n~ a~ to ~ ~cro~t~ont un~t ln~t .~ n)~ 1 tb-trc~ nt u~lt, tb~ contu~n-t~d llqu-f~d ~ d~
pre~d ~nd/or 11tor~1 9.~ indic-t~ ~. r~o ~
~lqu~d C02 1~ th~n tr~ t-d ~ t~b~ng lnot ~how~ to ch~b~r 12 through lnlot ~e~l~ ~a.
qArlou- 1~urf-c-~- ~ th ~l~ctro~lc, ~ c~ ltO~
ti~- and ~ro~p~ce ~ ld~ ~y ~o cloan~l ~ th- ~oco~- o~
tho ~ ent~O~ h- 17roco~- of tl~o ~-~t1Q~ el to cl~an ~ wl~o var~et~ o 9~b~tr~t~ ~o~od of ~loty o~
~at~r~al~. $~ pr~ t p~ J O~ roll-~dap~d ~o~ cloa~lng co~l h~d~o ~t~t ~9 dl a~
bl~. So~ ace~lar~ al~g ~ppl~c~tlo~ d~- d fl~x-ing of ~old r-d com~ectora d ~ te~ c~o~t board~; sa~al o~ photor~ t~ ~ro~ tr~t~-; t cont~-nat~ol~ of cl~ning ~d~ ~uc3~ a- cottou or So~rt~pp~l ~licato~, wip~r-, glo~o-, otc.~ degr~g of co~l-x h~rd~r~ ~d d~co~t~ll~tlon of al~c~e~ r, and ~ce~aft co~ clading p~, t~ fo~
e~-, ri~ t~, in~ulat~on, hou~ , lino~ , opt~c~l bench a8E~ hoat ~ , ~itch~, ~dcet~, ~Dd act~
metal ca~g~. Cont~t IDat-r~ ~ch ~ r~o~t fro~ trat~ ccor~ce ~ t~ t ~vo~t~oa include, b~t are ~IOt l~t~ to, oll, gr ~ br~c~t-, wld~r fl~ r~idu~ hoto~e~i-t, p~tlc~l~toc co~pr~g inorq~c or orq~lc ~t~r~al~ e~i~ r ~ la-tl~
c~s~ ct~d ~ono~-, dye~, ~ dl-l ct~c fl~a~b.
~1c~ trat-- froo ~ch cont~t~ ~y b~ re~d by tho pro~ent proco~ clud~ t ~r- wt l~t~ to, tEate- ~oDIed o~ t~l, n~b r, ~ tlc, cotton, c-l-lulo~, c~r~c~ d oth r organ~c or ~o~ oo~pol~ndJ.
The ~ to~ ~pl- or c~pl~ co~flguration~
~d ~y ~clude i~t-r-tlt~ pac~ Yh~ch u~o d~f~cu~t to clean by other k~ n ~dd~tio~, th ~tr-t-~ay l~ e fon~ o2 ~t~ulat- ~atter o~ otl~r ~in 3~ dlv~do~ ~at~rial. $ho ~nt ~ tlo~ ba~ a~pllcatio~ to gro-~ cl~g pro~ c~ ~ d~gr-a~g, r~ral ot t~p r~ , ~d f~ctlo~al ~luid se~n~ al~o ~1 2~.QI ~L2 ~pecl~ w~ c~t~d fo~ p~ lo~ al~tJ-~ing ot compl-x hardwar~ to hlg~ l~v-l~ of Gle~lln~
F.~ t-~w~y ~tl~ o~ t ~lt~ tlv~
cl~anlr~g ~ hlch ~ay be ~ploy~d ~ pr~ct loing ~,o 5 pres~nt imr-ntion, ~n ~b~h ~ultlpl- ~oc1c~tln~ ~or u~ r~f-r-~¢- d-~lgnatlon~ G. 2 ar- th~
~a~o a- tho~- u~ lC. 1. ~ PIG. 2, th clea~g cha~r ~,2 1~ pro~ th a ~oalc~ti~g ho~ 1~
actiY~t~ ~y ~ tr~tua~ (~t~ out a ~ t~r), ~q 10 ~ou~t~g th ~o~e-t~g ho~ ~ t21~ ~ld 1~ ~ tS oy--t~ o~ ~C. 1. I~ ~IG. 2, tl~e cl~ g o~r 1~ ~- fur-the~ l?r~ld~ ~th ~ ~eoond ~o~ t~g horu 3~ ~oDd tra~ s 3~ ottc~ ~ .0 o~ thc c~r. q!~
con1gur-tion ho~ la ~I~. 2, uoing t~o o~c~tl~g ~or~-, 1S prov~d - ~lfosa o~cat~o~l th~oughol~t tS cba~
~riatlo~J o~ thi- conflgu~atlo~ be u~ ~rlt~ t~ ~o~-icat1J~9 hon~ r~lou~ at~o~ tlto top ~ ~d otto~ d ~11-, or ~otS ~ of t~
ch~or 1~. ror ~c of ~llu-trat1Ot~, hoatl~ l~nt ~"
20 coolinq ~clcet 3~ n~ouple ~cll 33, pr~ g~ug~ 3~., and ~tlr~or 26 hav~ o~tted ro~ F~;- 2, )~t ~o ~-cluded i~ thl~ t of th- pre~a~t ~r~ti ~ tl~e r a~ ho~ ~ G. 1.
PI~. 3 1J ~ cut-~way ~ r of ~ portlo~ 0~ tho clea~ g 25 ch~er for ~ co~d ~lt r~t~v clcaD~ ~e-sel ~ch ~y be e~Dpl~ ct~l~g t210 pr~ t l~ tlo~, ~ ~ah ~ltlpl- c ~it~t~o~ o~ r- ~ ~ll~o~t of the ~ ~tlol~, th ~ ca~o~ol~t- r- ~ r 1~ r~G.
1, e~tc~pt t~t t~ ~on~c~tloll ho~ 1~~ the 30 c~eani:~g c~ 12 of FlG. 1 1~ ~oplac~ lth ol-anl~g cha~r 50 ~ho~m ~ FIG. 3. I~ach ~ll o~ th- cb~r ~0 co~prl~e~ ~ ~rr~ o~ ca~itatlon nozzle- 5~ whlcll ~o foDed l~t-gral nth tho cha~r ~ll, ~cb ~ rlll~g ho10~ of ~prol?rl~to lon~ ~ th~ c~r ~11. ~iq~
35 u-flod g~- fro~ ourc (not ~hff~) un~ r cont~oll~ co~-~lt~o~ ot tlo~ r~t-, to~er~tllr, a~d ~e~ur~ tro-d~c-~l ~to th~ c~ 0 throug~ t #~- 5~ nd ~.

~2 ~ S~o lsqu-f~ed ga~ to tb~ 0~ theJa througb tho ~ozsl-~ 5;~ an~ to th~ ~lea~ln~ ~on- ~2, dhic~
hsld~ tbo ~ubst,r~t- (not ~ho~m) to ~e clean~
lsl th- art~ th- pre~ur~ at th~- ~ourco ~u~t ~ ~u~flclelltl,y hlgh to pro~uc~ tho flo~.r v~ ty at t21~ ~0~21~ wblch ~11 pro~rlde th~ r~u~s~d pr~ ro drop to ~oduc~ o~.
op~lo~all~ ahu~ 50 ~ay furth-r cos prl~ y of G~rltatlo~ 02~ 5~ ~ ~ o~t~ to~ t~S~
op rat$o~ cloa~ 1 og ~IC. 3 1~
~ th~ 9 7~1~E~l of ~IG. 1 xco~t t~t th~ ca~tation slozz10~ ~ tSo fo~ s~ ~a~t~sn hor~ t~ 1~t'c~s. Su~t~lo c~itatio~ no~ CQ~
2ci~ v~ or ox~1~, fxo~ ~o~c ~Jlgin~r~g Co~poratlo~, 210r~altc, Co~cti~t.
Bx~p1-- of ~7~acti~- of t)~o pr~at l~r9~ltlo~ e ~ -follo~.

~ , .

P1~t$c (a~sy1ic) p~ contam~ n~t~ alu~n~ ~ -oxi.d~ ~tic1~ ~c~ r di~et~ clos~
r~io~ aid C02 a~t so~cat~ o~ 9 , c12~1 v~el o~ the t~ d~cr~d ~ith r-fore~:~ to PS~
bl~ S b~ t~ tha po~ app1i~ to t~ l~ltra~o~c 2S trastu~uc~r 18, th~ t~at~ of th~ d COa, th~ nod-nal pr~uro of CO~ ~ po~d~ ~o ~cl~, p~
Rg/c~;2), th t~D of ~o~cat~o~, a~d th~ a~q E~tl~g.
T~ ~r ~ally ~-pectod, a~ t a v~l~
f~ 1 to S, ~th 5 ~ing t~o le~t co~'ca~ted. Tn p~-tlc~ al~ o 1 i~dlcat~ llght ha20 o~ pla~-t~c pa~ 8 ro6~1t o~ cont~io~ o~ Sh~
tlcle-; a,ralu~ of S i~d~c~t~d al~ t to~1 ~ nc~ o~
e10~.

-.' '' ' ':,. ' ', ', . ' '~ :, , : - . . ' ' . ; . '.`,~ .`; ! ' ' : : ' . :. ' ' ' .~ . :

~3 21Q~

~able I Clennlng D~ta Power Supply Temperaturc Pre~ure T~e Rating ~watt~ C~ p~i Ra/c~2 ~sec~

37S 22 900 63 3 lO
375 10 ~00 49 2 600 In thi~ Ex~pl-, tho 375 ~nd 600 w4tt powor upplio-20 were Tekm4r Son~c Di~ruptor-, o~t~ined from $ekm~r of Cincinnati, O~io, at a frequency of 20 kilohertz. The ~on-icating horn 16 w4~ 0.50 ~nch (1 27 c~), provided with 5 inch (12 7 c~) extender-.
T~ble I demon~trate~ that for thi- 4ppl~cAtion bett-r cle~ning i~ obt4ined at high r temperature- and pre~ure~
and at high~r power ~nd ~onication ti~e Th ~ffect of th te~perature of the l~qu~d CO2 on the sonic norgy input ~a- tud~od T~ble II bel~w l~t- the energy i~put data for ultra~on~c~ ~n l~qu~d C02. Th ~olu f C2 ~ each ca~o wa- 5.7 liter-. In T~bl~ II, T
temper~ture 4nd P i~ pre-~ur-.

Table II ~nergy Input D~ta Sonic~tion P~ramet-r~ ld P-ran-t-r~ _ S ~o~r Supply Output control ~ P Pow r Output ~V~tt-l _ S~ttinq l-C~ D~ tto) 600100 22 920 ~1.7'7~
231020 '~1-7~0 221~7S 61-S 20 0 375100 22 9~0 66-~ ~2 .

375100 1~1~20 57-7 ~S
17 800 5~.2~S
18 8~0 5~ 5 :
600100 la a20 S7-7 20 ~8 830 S~-~ 13 18 830 58.~ S

The data in Table II provide n mea~ure of how well cavitation in the liquid C02 occur~ a~ a re~ult of energy transferrod to the flui~. Specifically, at lower tempora-ture~, the power output dxop~ considorably.
Thu~, thero ha- been di~closed a proce-- for r~moving contaminant~ fro~ ~ubstrate~, u~ing liquefied ga-. It wlll be appreciated by tho-e killed i~ the art tbat ~riou-DK~di~ication- ~nd change- of an obviou~ natur~ ~ay b~ ~ado without departlng froo th~ cope of the inv~ntion, ~nd all such modification~ and change- are intended to fall within the gcope of the invention, a~ defined by the ~ppended clai~s.

"' ,'."' ,, ,~' ' ' : ~' ";'

Claims (10)

1. A process for removing undesired material from a chosen substrate (28) comprising the steps of:
(a) placing said substrate containing said unde-sired material in a cleaning chamber (12) provided with cavitation-producing means (16, 36, 52);
(b) introducing into said cleaning chamber a liq-uefiable gas formed by applying a pressure of about 100 at-mospheres (103.3 Kg/cm2) or less at a temperature of less than about 50°C to a selected gas and contacting said sub-strate containing said undesired material with said lique-fied gas at a temperature below the critical temperature of said gas; and (c) exposing said liquefied gas in said cleaning chamber to said cavitation-producing means for a period of time sufficient to remove said undesired material from said substrate.
2. The process of Claim 1 wherein said gas is selected from the group consisting of carbon dioxide, nitrous oxide, sulfur hexafluoride, and xenon.
3. The process of Claim 1 further comprising perform-ing at least one of the following steps: (1) prior to con-tacting said substrate containing said undesired material with said liquefied gas, contacting said substrate with said gas in the dense phase at a pressure above the criti-cal pressure of said gas and at a temperature above the critical temperature of said gas for a period of time suf-ficient to remove said undesired material which is soluble in said gas in said dense phase, or (2) after said exposing step, contacting said substrate with said gas in the dense phase at a pressure above the critical pressure of said gas and at a temperature above the critical temperature of said gas for a period of time sufficient to remove said unde-sired material which is soluble in said gas in said dense phase.
4. The process of Claim 1 further comprising the step of, following said exposing step, treating said liquefied gas containing said undesired material to remove said unde-sired material and returning said treated liquefied gas to said cleaning vessel.
5. The process of Claim 1 wherein said gas is carbon dioxide and wherein said temperature ranges from about -57°C to less than 32°C and said pressure ranges from about 75 pounds per square inch (about 5.3 Kg/cm2) to about 200 pounds per square inch (about 14.1 Kg/cm2) above the vapor pressure of CO2 at said temperature.
6. The process of Claim 1 wherein said exposing is carried out for a period of time of at least about 30 sec-onds.
7. The process of Claim 1 wherein said cavitation-producing means is selected from the group consisting of ultrasonic agitation means (16, 36), cavitation nozzle means (52), and cavitation propeller means.
8. The process of Claim 1 wherein at least step (c) is repeated at least once.
9. The process of Claim 1 wherein the pressure within said cleaning vessel is raised above the natural vapor pressure of said liquefied gas by one of the following steps: (1) addition of a non-condensible gas, or (2) com-pletely filling said vessel with liquefied gas at a pres-sure which is higher than said natural vapor pressure.
10. A system (10) employing the process of Claim 1 for removing said undesired material from fluid substrate comprising:
(a) said cleaning chamber for containing said liquefied gas and said substrate containing said undesired material;
(b) said cavitation-producing means, located within said chamber, for producing cavitation in said liq-uefied gas;
(c) pressure control means (34) connected to said chamber for controlling the pressure within said chamber;
(d) temperature control means (31, 32, 33) con-nected to said chamber for controlling the temperature within said chamber;
(e) inlet means (22) in said chamber for intro-ducing said liquefied gas into said chamber; and (f) outlet means (24) in said chamber for remov-ing said liquefied gas from said chamber.
CA002101142A 1992-08-10 1993-07-22 Cleaning by cavitation in liquefied gas Abandoned CA2101142A1 (en)

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
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Families Citing this family (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5456759A (en) * 1992-08-10 1995-10-10 Hughes Aircraft Company Method using megasonic energy in liquefied gases
US5339844A (en) 1992-08-10 1994-08-23 Hughes Aircraft Company Low cost equipment for cleaning using liquefiable gases
CA2120537A1 (en) * 1993-04-12 1994-10-13 Thomas B. Stanford, Jr. Megasonic cleaning system using compressed, condensed gases
US5456758A (en) * 1993-04-26 1995-10-10 Sematech, Inc. Submicron particle removal using liquid nitrogen
EP0741637B1 (en) 1994-01-31 1999-07-28 Bausch & Lomb Incorporated Treatment of contact lenses with supercritical fluid
DE69523208T2 (en) * 1994-04-08 2002-06-27 Texas Instruments Inc Process for cleaning semiconductor wafers using liquefied gases
KR0137841B1 (en) * 1994-06-07 1998-04-27 문정환 Method for removing a etching waste material
EP0711864B1 (en) * 1994-11-08 2001-06-13 Raytheon Company Dry-cleaning of garments using gas-jet agitation
DE69520687T2 (en) * 1994-11-09 2001-08-23 R R Street & Co METHOD AND SYSTEM FOR TREATING PRESSURE LIQUID SOLVENTS FOR CLEANING SUBSTRATES
US5711820A (en) * 1994-12-20 1998-01-27 Allied Signal, Inc. Method to separate and recover oil and plastic from plastic contaminated with oil
JPH08238463A (en) * 1995-03-03 1996-09-17 Ebara Corp Cleaning method and cleaning apparatus
US6148644A (en) 1995-03-06 2000-11-21 Lever Brothers Company, Division Of Conopco, Inc. Dry cleaning system using densified carbon dioxide and a surfactant adjunct
US5676705A (en) * 1995-03-06 1997-10-14 Lever Brothers Company, Division Of Conopco, Inc. Method of dry cleaning fabrics using densified carbon dioxide
DE19509573C2 (en) 1995-03-16 1998-07-16 Linde Ag Cleaning with liquid carbon dioxide
US5783082A (en) 1995-11-03 1998-07-21 University Of North Carolina Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants
DE19618974A1 (en) * 1996-05-10 1997-11-13 Wacker Chemie Gmbh Semiconductor material treatment in cavitating liquid bath
US5756657A (en) * 1996-06-26 1998-05-26 University Of Massachusetts Lowell Method of cleaning plastics using super and subcritical media
US5868856A (en) * 1996-07-25 1999-02-09 Texas Instruments Incorporated Method for removing inorganic contamination by chemical derivitization and extraction
KR19980018262A (en) * 1996-08-01 1998-06-05 윌리엄 비.켐플러 I / O port and RAM memory addressing technology
US5881577A (en) * 1996-09-09 1999-03-16 Air Liquide America Corporation Pressure-swing absorption based cleaning methods and systems
US6039059A (en) * 1996-09-30 2000-03-21 Verteq, Inc. Wafer cleaning system
US5822818A (en) * 1997-04-15 1998-10-20 Hughes Electronics Solvent resupply method for use with a carbon dioxide cleaning system
US6306564B1 (en) 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6500605B1 (en) 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
TW539918B (en) 1997-05-27 2003-07-01 Tokyo Electron Ltd Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US5904156A (en) * 1997-09-24 1999-05-18 International Business Machines Corporation Dry film resist removal in the presence of electroplated C4's
US6012307A (en) * 1997-12-24 2000-01-11 Ratheon Commercial Laundry Llc Dry-cleaning machine with controlled agitation
US6070440A (en) * 1997-12-24 2000-06-06 Raytheon Commercial Laundry Llc High pressure cleaning vessel with a space saving door opening/closing apparatus
US5850747A (en) * 1997-12-24 1998-12-22 Raytheon Commercial Laundry Llc Liquified gas dry-cleaning system with pressure vessel temperature compensating compressor
US5858107A (en) * 1998-01-07 1999-01-12 Raytheon Company Liquid carbon dioxide cleaning using jet edge sonic whistles at low temperature
US6426136B1 (en) 1998-02-10 2002-07-30 R & D Technology, Inc. Method of reducing material size
US5977045A (en) * 1998-05-06 1999-11-02 Lever Brothers Company Dry cleaning system using densified carbon dioxide and a surfactant adjunct
US6113708A (en) * 1998-05-26 2000-09-05 Candescent Technologies Corporation Cleaning of flat-panel display
US6048369A (en) * 1998-06-03 2000-04-11 North Carolina State University Method of dyeing hydrophobic textile fibers with colorant materials in supercritical fluid carbon dioxide
US5996155A (en) * 1998-07-24 1999-12-07 Raytheon Company Process for cleaning, disinfecting, and sterilizing materials using the combination of dense phase gas and ultraviolet radiation
US6343609B1 (en) 1998-08-13 2002-02-05 International Business Machines Corporation Cleaning with liquified gas and megasonics
US6277753B1 (en) 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
US7064070B2 (en) * 1998-09-28 2006-06-20 Tokyo Electron Limited Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
JP2000263337A (en) * 1999-01-13 2000-09-26 Japan Science & Technology Corp Surface refining method of metal part, washing method and device
US6630032B2 (en) 1999-02-26 2003-10-07 Prowell Technologies, Ltd. Method and apparatus for dislodging accrued deposits from a vessel
US6212916B1 (en) 1999-03-10 2001-04-10 Sail Star Limited Dry cleaning process and system using jet agitation
US6260390B1 (en) 1999-03-10 2001-07-17 Sail Star Limited Dry cleaning process using rotating basket agitation
US6766179B1 (en) * 1999-10-04 2004-07-20 Koninklijke Philips Electronics N.V. Cross-shape layout of chinese stroke labels with lyric
US6558432B2 (en) 1999-10-15 2003-05-06 R. R. Street & Co., Inc. Cleaning system utilizing an organic cleaning solvent and a pressurized fluid solvent
US6755871B2 (en) 1999-10-15 2004-06-29 R.R. Street & Co. Inc. Cleaning system utilizing an organic cleaning solvent and a pressurized fluid solvent
US7097715B1 (en) 2000-10-11 2006-08-29 R. R. Street Co. Inc. Cleaning system utilizing an organic cleaning solvent and a pressurized fluid solvent
US6355072B1 (en) * 1999-10-15 2002-03-12 R.R. Street & Co. Inc. Cleaning system utilizing an organic cleaning solvent and a pressurized fluid solvent
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
KR100566032B1 (en) * 1999-11-11 2006-03-30 휴글엘렉트로닉스가부시키가이샤 Dust cleaning apparatus
US6776801B2 (en) 1999-12-16 2004-08-17 Sail Star Inc. Dry cleaning method and apparatus
SE515491C2 (en) * 1999-12-27 2001-08-13 Electrolux Ab Process and apparatus for cleaning porous materials by carbon dioxide
US6663954B2 (en) 2000-01-03 2003-12-16 R & D Technology, Inc. Method of reducing material size
US6261326B1 (en) 2000-01-13 2001-07-17 North Carolina State University Method for introducing dyes and other chemicals into a textile treatment system
IL152376A0 (en) * 2000-04-25 2003-05-29 Tokyo Electron Ltd Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
JP2001313317A (en) * 2000-04-28 2001-11-09 Ando Electric Co Ltd Method and device for cleaning probe
WO2002009147A2 (en) 2000-07-26 2002-01-31 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US6676710B2 (en) 2000-10-18 2004-01-13 North Carolina State University Process for treating textile substrates
IL158340A0 (en) * 2001-04-10 2004-05-12 Supercritical Systems Inc High pressure processing chamber for semiconductor substrate including flow enhancing features
US6616769B2 (en) * 2001-09-28 2003-09-09 Air Products And Chemicals, Inc. Systems and methods for conditioning ultra high purity gas bulk containers
US20030062071A1 (en) * 2001-09-28 2003-04-03 Sorbo Nelson W. Dense-phase fluid cleaning system utilizing ultrasonic transducers
US20040040660A1 (en) * 2001-10-03 2004-03-04 Biberger Maximilian Albert High pressure processing chamber for multiple semiconductor substrates
TW497494U (en) * 2001-12-28 2002-08-01 Metal Ind Redearch & Amp Dev C Fluid driven stirring device for compressing gas cleaning system
US20040016450A1 (en) * 2002-01-25 2004-01-29 Bertram Ronald Thomas Method for reducing the formation of contaminants during supercritical carbon dioxide processes
US7138014B2 (en) * 2002-01-28 2006-11-21 Applied Materials, Inc. Electroless deposition apparatus
US6928746B2 (en) * 2002-02-15 2005-08-16 Tokyo Electron Limited Drying resist with a solvent bath and supercritical CO2
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
WO2003077032A1 (en) * 2002-03-04 2003-09-18 Supercritical Systems Inc. Method of passivating of low dielectric materials in wafer processing
US6953654B2 (en) 2002-03-14 2005-10-11 Tokyo Electron Limited Process and apparatus for removing a contaminant from a substrate
AU2003220443A1 (en) * 2002-03-22 2003-10-13 Supercritical Systems Inc. Removal of contaminants using supercritical processing
US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
FR2838658B1 (en) * 2002-04-17 2005-01-28 Dehon Sa PRODUCT FOR CLEANING REFRIGERATING PLANTS, METHOD AND DEVICE FOR IMPLEMENTING IT
JP3949504B2 (en) * 2002-04-25 2007-07-25 英夫 吉田 Method and apparatus for activation treatment of base material surface
DE10236485B4 (en) * 2002-08-09 2012-10-11 Air Liquide Deutschland Gmbh Cleaning substrate surfaces using CO2 and N2O
US6880560B2 (en) * 2002-11-18 2005-04-19 Techsonic Substrate processing apparatus for processing substrates using dense phase gas and sonic waves
US20040112409A1 (en) * 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
US20040177867A1 (en) * 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
US7798159B2 (en) * 2002-12-19 2010-09-21 Valerie Palfy At-home integrated cleaning and disinfection system and method for dental hardware
US7191787B1 (en) * 2003-02-03 2007-03-20 Lam Research Corporation Method and apparatus for semiconductor wafer cleaning using high-frequency acoustic energy with supercritical fluid
US20040154647A1 (en) * 2003-02-07 2004-08-12 Supercritical Systems, Inc. Method and apparatus of utilizing a coating for enhanced holding of a semiconductor substrate during high pressure processing
US7237564B1 (en) 2003-02-20 2007-07-03 Lam Research Corporation Distribution of energy in a high frequency resonating wafer processing system
US20040198066A1 (en) * 2003-03-21 2004-10-07 Applied Materials, Inc. Using supercritical fluids and/or dense fluids in semiconductor applications
US20040231707A1 (en) * 2003-05-20 2004-11-25 Paul Schilling Decontamination of supercritical wafer processing equipment
US6938439B2 (en) * 2003-05-22 2005-09-06 Cool Clean Technologies, Inc. System for use of land fills and recyclable materials
US7250374B2 (en) * 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US20060065288A1 (en) * 2004-09-30 2006-03-30 Darko Babic Supercritical fluid processing system having a coating on internal members and a method of using
US20060130966A1 (en) * 2004-12-20 2006-06-22 Darko Babic Method and system for flowing a supercritical fluid in a high pressure processing system
US20060134332A1 (en) * 2004-12-22 2006-06-22 Darko Babic Precompressed coating of internal members in a supercritical fluid processing system
US7434590B2 (en) * 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7140393B2 (en) * 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US20060135047A1 (en) * 2004-12-22 2006-06-22 Alexei Sheydayi Method and apparatus for clamping a substrate in a high pressure processing system
US7435447B2 (en) * 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US20060185693A1 (en) * 2005-02-23 2006-08-24 Richard Brown Cleaning step in supercritical processing
US20060186088A1 (en) * 2005-02-23 2006-08-24 Gunilla Jacobson Etching and cleaning BPSG material using supercritical processing
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7442636B2 (en) * 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7399708B2 (en) * 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US20070228600A1 (en) * 2005-04-01 2007-10-04 Bohnert George W Method of making containers from recycled plastic resin
US7253253B2 (en) 2005-04-01 2007-08-07 Honeywell Federal Manufacturing & Technology, Llc Method of removing contaminants from plastic resins
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7524383B2 (en) * 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
US20080060685A1 (en) * 2006-09-08 2008-03-13 Novak John S Pulsed-gas agitation process for enhancing solid surface biological removal efficiency of dense phase fluids
KR20080065751A (en) * 2007-01-10 2008-07-15 엘지전자 주식회사 Multiple laundry treating machine
WO2008143839A1 (en) * 2007-05-15 2008-11-27 Eco2 Plastics Method and system for removing pcbs from synthetic resin materials
US20090044828A1 (en) * 2007-08-15 2009-02-19 Brahmbhatt Sudhir R Methods and Systems for Debonding an Undesirable Material from a Device Using Ultrasonic Energy and Liquid Nitrogen
US8043557B2 (en) * 2007-08-15 2011-10-25 American Air Liquide, Inc. Methods and systems for sanitizing or sterilizing a medical device using ultrasonic energy and liquid nitrogen
WO2009076576A2 (en) * 2007-12-12 2009-06-18 Eco2 Plastics Continuous system for processing particles
CN101740337B (en) * 2008-11-19 2012-03-28 中国科学院微电子研究所 Semiconductor carbon dioxide supercritical sweeping and cleaning machine
US7980494B2 (en) * 2008-12-08 2011-07-19 Jorge Zapp System for recycling of HDPE from motor-oil containers
US20100147889A1 (en) * 2008-12-09 2010-06-17 Green Source Automated, Llc System and method for the delivery of a sanitizing foam
EP2315235B1 (en) * 2009-10-21 2019-04-24 IMEC vzw Method and apparatus for cleaning a semiconductor substrate
US9004086B2 (en) 2010-11-04 2015-04-14 Lam Research Corporation Methods and apparatus for displacing fluids from substrates using supercritical CO2
US10569309B2 (en) * 2015-12-15 2020-02-25 General Electric Company Equipment cleaning system and method
KR20210094563A (en) * 2018-11-19 2021-07-29 센스 머티리얼즈 엘티디. Dispersion of small-scale materials through cavitation
CN112404045B (en) * 2020-11-04 2022-01-28 山东西海建设集团有限公司 Steel sheet pile frozen soil cleaning equipment
CN112642797B (en) * 2020-12-04 2022-12-09 天津市晟昇钢结构有限公司 H-shaped steel surface rust removal treatment process

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2828231A (en) * 1954-03-31 1958-03-25 Gen Electric Method and apparatus for ultrasonic cleansing
US3058014A (en) * 1958-09-08 1962-10-09 Bendix Corp Apparatus for generating sonic vibrations in liquids
US4012194A (en) * 1971-10-04 1977-03-15 Maffei Raymond L Extraction and cleaning processes
JPS55119181A (en) * 1979-03-07 1980-09-12 Nippon Steel Corp Cleaning of steel plate surface by laser irradiation
WO1984002291A1 (en) * 1982-12-06 1984-06-21 Hughes Aircraft Co Method of cleaning articles using super-critical gases
US4692982A (en) * 1986-05-22 1987-09-15 Rice Norman B Lining removal process
US4797178A (en) * 1987-05-13 1989-01-10 International Business Machines Corporation Plasma etch enhancement with large mass inert gas
US4990260A (en) * 1988-01-28 1991-02-05 The Water Group, Inc. Method and apparatus for removing oxidizable contaminants in water to achieve high purity water for industrial use
US4906387A (en) * 1988-01-28 1990-03-06 The Water Group, Inc. Method for removing oxidizable contaminants in cooling water used in conjunction with a cooling tower
US5013366A (en) * 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
US5068040A (en) * 1989-04-03 1991-11-26 Hughes Aircraft Company Dense phase gas photochemical process for substrate treatment
US5062898A (en) * 1990-06-05 1991-11-05 Air Products And Chemicals, Inc. Surface cleaning using a cryogenic aerosol

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109019752A (en) * 2018-07-03 2018-12-18 江苏大学 A kind of device and method using laser cavitation processing organic wastewater
CN111618036A (en) * 2020-06-28 2020-09-04 华东交通大学 Two-step method cable ultrasonic automatic cleaning equipment
CN111618036B (en) * 2020-06-28 2023-10-03 华东交通大学 Two-step normal cable ultrasonic automatic cleaning equipment

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